外文题目: Optoelectronic properties in the terahertz of femtosecond-laser-ablated GaAs
作者: Madeo, J.(1); Margiolakis, A.(1,2); Zhao, Z.-Y.(3); Hale, P.J.(1); Man, M.K.L.(1); Zhao, Q.-Z.(4); Peng, W.(5); Shi, W.-Z.(3); Dani, K.M.(1); Mariserla, Bala Murali Krishna(1)
刊名: Prog. Electromagn. Res. Symp., PIERS - Proc.
来源图书: 2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings
年: 2016 页： 2390
会议名称: 2016 Progress In Electromagnetics Research Symposium, PIERS 2016
英文摘要:
We measure the opto-electronic properties of femtosecond-laser-ablated GaAs and demonstrate its utility towards THz devices. In particular, we show that laser-ablated THz antennas are 65% more efficient than non-ablated antennas at high powers. Our results demonstrate the possibility of using femtosecond-laser-ablation as a cost-effective technique to engineer material properties for THz devices. ? 2016 IEEE.


文献类型: 会议论文
正文语种: English
收录类别: EI
DOI: 10.1109/PIERS.2016.7734980


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