外文题目: Femtosecond laser pulse induced phase transition of Cr-doped Sb2Te1 films studied with a pump-probe system
作者: Jiang, Minghui; Wang, Qing; Lei, Kai; Wang, Yang; Liu, Bo; Song, Zhitang
刊名: Proc.SPIE
来源图书: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
年: 2016 卷: 9818 文章编号：981815
会议名称: International Workshop on Information Data Storage / 10th International Symposium on Optical Storage
英文关键词:
phase change memory material; femtosecond laser; phase transition dynamics; real-time reflectivity measurements
ERASABLE OPTICAL STORAGE; CHANGE MEMORY; GESB FILMS; CRYSTALLIZATION; DYNAMICS; DRIVEN
英文摘要:
The Femtosecond laser pulse induced phase transition dynamics of Cr-doped Sb2Te1 films was studied by real-time reflectivity measurements with a pump-probe system. It was found that crystallization of the as-deposited CrxSb2Te1 phase-change thin films exhibits a multi-stage process lasting for about 40ns. The time required for the multi-stage process seems to be not related to the contents of Cr element. The durations of the crystallization and amorphization processes are approximately the same. Doping Cr into Sb2Te1 thin film can improve its photo-thermal stability without obvious change in the crystallization rate. Optical images and image intensity cross sections are used to visualize the transformed regions. This work may provide further insight into the phase-change mechanism of CrxSb2Te1 under extra-non-equilibrium conditions and aid to develop new ultrafast phase-change memory materials.


文献类型: 会议论文
正文语种: English
收录类别: ISTP
DOI: 10.1117/12.2249274


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