外文题目: Thermal lithography characteristics of SbBi thin films
作者: Li, Liang; Zhang, Kui
刊名: Proc.SPIE
来源图书: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
年: 2016 卷: 9818 文章编号：981811
会议名称: International Workshop on Information Data Storage / 10th International Symposium on Optical Storage
英文关键词:
SbBi thin film; thermal lithography characteristics; etching rate; ammonium sulfide solution
INORGANIC PHOTORESIST; LASER; FABRICATION; BEAM
英文摘要:
Laser thermal lithography technology based on the optothermal mode is a very promising fabrication approach in high-density optical storage and semiconductor industry. SbBi thin film is a typical phase change material which has been deep-going studied and widely used as the super-resolution mask layer. Phase transformation of the SbBi material from amorphous to crystalline state can be achieved by vacuum annealing or laser irradiating. In this work, SbBi thin films as a new thermal lithography material are investigated for the first time. The thermal lithography characteristics of SbBi thin films were studied by means of etching in the ammonium sulfide solution. Line-shaped structures were developed using our laser-induced crystallization apparatus, followed by etching in the ammonium sulfide solution. It is found that the etching rate of the amorphous state is greater than that of the crystalline state, which are 17.8 nm/min and 4 nm/min, respectively. The mechanism of the difference in etching rate between the two states is also discussed. These results indicate that SbBi thin film is a potential candidate for thermal lithography materials.


文献类型: 会议论文
正文语种: English
收录类别: ISTP
DOI: 10.1117/12.2248356


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