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Tailored femtosecond Bessel beams for high-throughput, taper-free through-Silicon vias (TSVs) fabric

上海光学精密机械研究所 免费考研网/2018-05-06

外文题目: Tailored femtosecond Bessel beams for high-throughput, taper-free through-Silicon vias (TSVs) fabrication
作者: He, Fei; Yu, Junjie; Chu, Wei; Wang, Zhaohui; Tan, Yuanxin; Cheng, Ya; Sugioka, Koji
刊名: Proc.SPIE
来源图书: LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING (LAMOM) XXI
年: 2016 卷: 9735 文章编号:973506
会议名称: Conference on Laser Applications in Microelectronic and Optoelectronic Manufacturing XXI (LAMOM)
英文关键词:
Through-Silicon vias; femtosecond laser; micromachining; Bessel beam; binary phase plate
MICROFLUIDIC CHANNELS; LASER-PULSES; GLASS; AXICON
英文摘要:
For higher-density integration and acceleration of operating speed in Si ICs, 3D integration of wafers and/or dies is essential. Fabrication of current 3D ICs relies on 3D assembly which electrically connects stacked chips to form a single circuit. A key technology for the 3D assembly is TSVs which are vertical electrical connections passing completely through silicon chips to electrically connect vertically assembled Si ICs. Typical TSVs have wide features, with diameters of a range from several microns to 50 mu m and depths up to 500 mu m with aspect ratios up to 15 depending on the application and integration scheme. In this work, we present high-throughput, taper-free TSVs fabrication using femtosecond Bessel beams operated at different wavelengths from 400 nm to 2.4 mu m. Furthermore, special phase filters are designed to suppress the damages induced by the side-lobes of Bessel beams for high-quality TSVs fabrication. Our technique can be potentially used for 3D assembly in manufacture of 3D silicon integrated circuits.


文献类型: 会议论文
正文语种: English
收录类别: ISTP
DOI: 10.1117/12.2214694


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