李轩 邮箱：xuanli@uestc.edu.cn
电话：
系别：微电子与固体电子系
职称：特聘副研究员
教师个人主页：


教师简介
教育背景
2013.09－2015.09 北卡罗莱纳州立大学，电气与计算机工程专业，联合培养博士
2017.10 德州大学奥斯汀分校，访问
2011.09－2017.12 电子科技大学，微电子学与固体电子学专业，博士学位
2007.09－2011.07 电子科技大学，电子科学与技术(微电子技术)专业，学士学位

工作履历
2020.08－至今 电子科技大学，副研究员
2018.01－2020.07 电子科技大学，博士后

学术兼职
1、IEEE会员；
2、担任电子器件领域国际权威期刊IEEE Transactions on Electron Device, IEEE Electron Device Letter；电力电子应用领域国际权威期刊IEEE Transactions on Industrial Electronics, IEEE Transactions on Power Electronics, IEEE Journal of Emerging and Selected Topics in Power Electronics等国际期刊的审稿人。

荣誉奖励
2018 IEEE Excellent Student Paper Award (Chengdu Section)
科学研究
研究方向
长期一线系统从事第三代宽禁带碳化硅（SiC）半导体功率器件与集成和它们在电力电子系统中应用的研究。作为负责人或主研人员多次参与了国家自然科学基金重点/面上/青年项目(多项)、国家重点研发项目(多项)、国家科技重大专项、重点实验室项目(多项)、企业项目(多项)等20余项，累计经费达千余万元。
目前，以碳化硅半导体国家需求与市场经济为导向，面向电动汽车与充电桩、对工业互联网的不间断能源供给（碳化硅中低压量级），城际高铁和城际轨道交通、工业牵引（碳化硅中高压量级），特高压直流输电（碳化硅超高压量级）以及其他特殊领域对SiC功率器件(即功率类芯片)的迫切需求，围绕如何最优使用高可靠性、高性能碳化硅功率器件以实现高可靠性、高性能电力电子装置过程中遇到的关键瓶颈问题，一方面从SiC/SiO₂界面态等物理底层出发，多层面、多角度地开展SiC功率单双极型器件(设计、制备、模型、可靠性)，碳化硅相适应的封装、驱动、控制，应用碳化硅功率器件的电力电子装置(高功率密度、高效率、高可靠性、高容量)的研究；另一方面适应电力电子装置高质量发展的述求，对功率芯片及其封装、驱动、控制等方面进行定制化发展。最终，以应用场景特点为牵引，以碳化硅功率芯片为核心，自下而上，自上而下，碳化硅功率体系各组成部分环环相扣、层层推进、互促互补，突破背后的关键基础科学问题与关键工程技术。
学术成果
近几年来，在该领域已发表学术文章40篇。以第一作者/通讯作者在电子器件领域的顶级期刊IEEE Electron Device Letter、IEEE Trans. on Electron Device和电力电子领域的顶级期刊IEEE Trans. on Industrial Electronics、IEEE Trans. on Power Electronics等发表期刊论文10篇；在业界顶级/知名会议IEEE ISPSD、ICSCRM、IEEE APEC、IEEE WiPDA、ECS发表学术论文数篇，其中邀请论文2篇。
近几年部分代表作
Ximing Chen, Xuan Li, Bangbing Shi, Junmiao Xiang, Yuanzhuo Dai, Chenzhan Li, Xiaochuan Deng, Haihui Luo, Yudong Wu, Bo Zhang, "Deep Understanding of Negative Gate Voltage Restriction for SiC mosfet Under Wide Temperature Range," in IEEE Transactions on Power Electronics, vol. 36, no. 8, pp. 8622-8627, Aug. 2021.
Ximing Chen, Bangbing Shi, Xuan Li, Huaiyun Fan, Chenzhan Li, Xiaochuan Deng, Haihui Luo, Yudong Wu, and Bo Zhang, "Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs," 2021 Chin. Phys. B 30 048504.
Xiaochuan Deng, Xu Li, Xuan Li, Hao Zhu, Xiaojie Xu, Yi Wen, Yongkui Sun, Wanjun Chen, Zhiqiang Li, Bo Zhang, "Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs," in IEEE Transactions on Power Electronics, vol. 36, no. 7, pp. 8300-8307, July 2021.
Xiaochuan Deng, Xiaojie Xu, Xuan Li, Xu Li, Yi Wen and Wanjun Chen, "A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance," in IEEE Electron Device Letters, vol. 41, no. 10, pp. 1472-1475, Oct. 2020.
Ximing Chen, Xuan Li, Yafei Wang, Hong Chen, Caineng Zhou, Chao Zhang, Chengzhan Li, Xiaochuan Deng, Yudong Wu and Bo Zhang, "Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 841-845, 2020.
Xuan Li, Xing Tong, Rui Hu, Yi Wen, Hao Zhu, Xiaochuan Deng, Yongkui Sun, Wanjun Chen, Song Bai, Bo Zhang, "Failure Mechanism of Avalanche Condition for 1200V Double Trench SiC MOSFET," in IEEE Journal of Emerging and Selected Topics in Power Electronics. pp1-1. 2020.
Xiaochuan Deng, Hao Zhu, Xuan Li, Xing Tong, Shufeng Gao, Yi Wen, Song Bai, Wanjun Chen, Kun Zhou, Bo Zhang, "Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions," in IEEE Transactions on Power Electronics, vol. 35, no. 8, pp. 8524-8531, Aug. 2020.
Xuan Li, Xu Li, Pengkun Liu, Suxuan Guo, Liqi Zhang, Alex Q. Huang, Xiaochuan Deng, Bo Zhang, "Achieving Zero Switching Loss in Silicon Carbide MOSFET," in IEEE Transactions on Power Electronics, vol. 34, no. 12, pp. 12193-12199, Dec. 2019.
Xuan Li, Ben Tan, Alex Q. Huang, Bo Zhang, Yumeng Zhang, Xiaochuan Deng, Zhaoji Li, Xu She, IEEE, Fangzhou Wang, and Xing Huang, "Impact of Termination Region on Switching Loss for SiC MOSFET," in IEEE Transactions on Electron Devices, vol. 66, no. 2, pp. 1026-1031, Feb. 2019.
Xuan Li, Xing Tong, Alex Q. Huang, Hong Tao, Kun Zhou, Yifan Jiang, Junning Jiang, Xiaochuan Deng, Xu She, Bo Zhang, Yourun Zhang, Qi Tian, "SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode, " in IEEE Transactions on Electron Devices, vol. 65, no. 1, pp. 347-351, Jan. 2018.
Xuan Li, Junning Jiang, Alex Q. Huang, Suxuan Guo, Xiaochuan Deng, Bo Zhang, Xu She, "A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications, "in IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8268-8276, Oct. 2017.
Hao Li, Bin Tang, Xuan Li, Zhenjun Qing, Yingxiang Li, Han Yang, Qiang Wang, Shuren Zhang, "The structure and properties of 0.95MgTiO₃–0.05CaTiO₃ceramics doped with Co₂O₃." Journal of Materials Science, September 2014, Volume 49, Pages 5850-5855.
Xuan Li, Xu Li, Liping Yang, Alex Q. Huang, Pengkun Liu, Xiaochuan Deng, Bo Zhang, " Switching Loss Model of SiC MOSFET Promoting High Frequency Applications," 2019 IEEE 31th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, pp. 231-234, 2019.
Xuan Li, Xing Tong, Alex Q. Huang, Shi Qiu, Xu She, Xiaochuan Deng, Bo Zhang, " Split Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss, "in International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington DC, pp. 765-769, June 2018.
Xuan Li, Wenchi Yang, Lijun Li, Xiaochuan Deng, Bo Zhang, "Three-Section Adjusted Field Limited Rings Applicable for SiC 2200V Power MOSFETs, "in Electrochemical Society (ECS) Meeting, National Harbor, MD, vol. 80, no. 1, pp. 181-187, October 2017.
Xuan Li, Liqi Zhang, Suxuan Guo, Yang Lei, Alex Q. Huang, Bo Zhang, "Understanding switching losses in SiC MOSFET: Toward lossless switching, " in 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Blacksburg, VA, pp. 257-262, November 2015.






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