杨治美，副教授，硕士生导师，博士
邮箱：yangzhimei@scu.edu.cn

个人简介
2004年6月获得四川大学微电子技术专业学士学位，2010年6月四川大学博士毕业留校。2016年8月赴德国克劳斯塔尔工业大学短期访学，2019年9月晋升为副教授。目前主要从事于宽禁带半导体材料与器件工艺，及宽禁带半导体器件的辐照效应的研究。获国家自然科学基金青年基金1项和横向项目2项，在IEEE TED、Nuclear Instruments and Methods in Physics Research、 Applied Surface Science、 Journal of Non-Crystalline Solids等国际著名学术刊物和会议上发表相关论文20余篇。

教育及工作经历
2 2019.9-至今 四川大学，物理学院，副教授
2 2016年8月 德国克劳斯塔尔工业大学短期访学
2 2010.07-2019.09 四川大学，物理学院，讲师
2 2007.09-2010.06 四川大学，物理学院，凝聚态物理，博士，导师：龚敏
2 2004.09-2007.06 四川大学，物理学院，凝聚态物理，硕士，导师：龚敏
2 2000.09-2004.07 四川大学，物理学院，微电子学，本科

主讲课程
2 《半导体物理学》
2 《半导体物理前沿》
2 《微电子平面工艺实验》
2 《大学物理》
研究方向
2 宽禁带半导体材料与器件工艺，及宽禁带半导体器件的辐照效应的研究
2 极端环境下器件的可靠性分析

承担科研项目情况
2 横向课题，HG**，SiC器件辐照诱生缺陷低温效应影响研究，2020/1-2021/12，主持；
2 自然科学基金青年基金，**,重离子辐照对4H-SiC SBD电学性能退化机制与物理建模的研究，2018/1-2020/1，主持；
2 横向课题，14H0577,Si基GaN大功率器件新工艺的研究， 2014/7-2017/7，主持；
2 四川大学青年科学启动基金， Si基新型宽禁带半导体材料立方碳化硅薄膜工艺优化的研究，2011/1-2012/12，主持；
2 自然科学基金青年基金，**，应用于中红外血糖检测的光子晶体，2017/1-2019/12，参加；
2 横向课题，15H0895，基于SiC逆变器组件技术研究，2015/11/9-2016/5/，参加；
2 国家自然科学基金，**、集成电路中高能单粒子径迹的电子学特性研究，2013/1-2016/1，参加；
论文和专利
2 一作/通讯作者期刊论文（时间倒序）
[1] M. Huang, R. Li, Z. Yang*, Y. Ma, Y. Li, X. Zhang, M. Gong. A multi-epi Superjunction MOSFET with a lightly-doped MOS-Channel diode for improving reverse recovery[J]. IEEE Transactions on Electron Devices, 2021, 68(5): 2401-2407.
[2] Shaomin Wang，Rongbin Hu，Gang Chen，Chengtao Luo，Min Gong，Yun Li，Mingmin Huang，Yao Ma，Zhimei Yang*. Investigation of 4H-SiC Schottky Barrier Diodes Irradiated with 6 MeV Au Ions at Low Temperature[J]. Nuclear Instruments and Methods in Physics Research B,2021,494-495:53-58
[3] Duowei Wang, Rongbin Hu, Gang Chen, Changqin Tang, Yao Ma, Min Gong, Qingkui Yu, Shuang Cao, Yun Li, Mingmin Huang, Zhimei Yang*. Heavy ion radiation and temperature effects on SiC schottky barrier diode[J]. Nuclear Instruments and Methods in Physics Research B, 2021,491:52-58
[4]Jiayu Zhu, Yun Li, Shaomin Wang, Hongxia Wang, Min Gong, Mingmin Huang, Yao Ma, Zhimei Yang*. Study on SOI structure irradiated by electron and annealled treatment using C-V, FTIR and PL[J]. Superlattices and Microstructures, 2020,139:106393
[5] Fan Lan , Min Gong, Mingmin Huang, Yun Li, Shaomin Wang, JieLiu, Youmei Sun, Pengfei Zhai, Yao Ma, Zhimei Yang*. Effects of ultraviolet illumination on 4H-SiC Schottky barrier diodes irradiated by swift heavy ions[J]. Nuclear Instruments and Methods in Physics Research B, 2020,465:6-10
[6] Zhimei Yang, Fan Lan, Yun Li, Min Gong, Mingmin Huang, Bo Gao, Junkui Hu,Yao Ma*.The effect of the interfacial states by swift heavy ion induced atomic migration in 4H-SiC Schottky barrier diodes[J]. Nuclear Instruments and Methods in Physics Research B, 2018,436:244-248
[7] Zhimei Yang, Yun Li, Yao Ma*, Min Gong, Mingmin Huang, Bo Gao, Li lai, XTEM investigation of recovery on electrical degradation of 4H-SiC Schottky barrier diode by swift heavy ²⁰⁹Bi ions irradiation[J]. Nuclear Instruments and Methods in Physics Research B, 2017,407:304-309
[8] Zhimei Yang, Yao Ma, Min Gong, Yun Li, Mingmin Huang, Bo Gao, Xin Zhao*，Recrystallization effects of swift heavy ²⁰⁹Bi ions irradiation on electrical degradation in 4H-SiC Schottky barrier diode[J].Nuclear Instruments and Methods in Physics Research B, 2017,401:51-55
[9] 王靖宇, 邓春纲, 马瑶, 李芸, 杨治美*, 龚敏.反向外延生长3C-SiC薄膜中残余应力的工艺优化[J]. 光散射学报, 2017,04:376-380
[10] 王飞, 杨治美*, 马瑶, 龚敏. SOI基3C-SiC薄膜的光谱表征[J]. 光散射学报, 2017, 02:187-190
[11] Yao Ma,Zhimei Yang*, Min Gong, Bo Gao, Yun Li, Wei Lin, Jinbo Li, Zhuohui Xia，Swift heavy ion irradiation induced electrical degradation in deca-nanometer MOSFETs[J]. Nuclear Instruments and Methods in Physics Research B, 2016,383:160-163
[12] 罗杰斯，王磊，杨治美*，龚敏，3C-SiC薄膜反向外延生长工艺的研究[J].光散射学报，2015，27（2）：144-147
[13] Zhimei Yang,Yunsen Zhang, Donglai Liu, Eryong Nie, Zhifeng Jiao, Yong Jin, Yi He, Min Gong, Xiaosong SUN*, Selective synthesis of SiO₂NWs on Si substrate and their adjustable photoluminescence[J]. Journal of Non-Crystalline Solids, 2010,356:2207-2210
[14] 廖熙，杨治美*，杨翰飞，龚敏，孙小松，Si基3C-SiC薄膜的LPCVD反向外延研究[J]. 四川大学学报(自然科学版)，2010，47（06）：1331-1334
[15] 杨治美，张云森，廖熙，杨翰飞，晋勇，孙小松，龚敏*, LPCVD Si基转换生长3C-SiC薄膜光学性质初探[J]. 光散射学报，2009, 21(4):304-308
[16] Zhimei Yang, Zhou Yu, Hao Chen, Zhifeng Jiao, Yong Jin,Yi He, Min Gong, Xiaosong Sun*, Growth of amorphous SiO₂nano-wires on pre-oxidized silicon substrate via chemical vapor deposition [J]. Journal of Non-Crystalline Solids, 2008, 354: 1731-1735
[17] 杨治美, 余洲, 林海, 王帅, 钟志亲, 陈浩, 武展文, 孙小松, 晋勇, 何毅, 龚敏. 无催化纳米氧化锌的制备及其光学性质研究[J].光散射学报,2006,03:271-276
2 其它期刊论文（时间倒序）
[1] Yun Li, Min Gong, Zhimei Yang, Ping Su, Yao Ma , Sijie Fan, Mingmin Huang*. Novel phenomenon of negative permittivity in silicon-based PiN diodes induced by electron irradiation [J]. Superlattices and Microstructures 149 (2021) 106755
[2 ] Mingmin Huang, Zhimei Yang, Shaomin Wang, Jiyuan Liu, Min Gong, Yao Ma, Jie Liu, Pengfei Zhai, Youmei Sun, Yun Li^?, Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy[J]. Nuclear Instruments and Methods in Physics Research B, 2020,478:5-10
[3] 明思汀,王多为, 唐常钦, 马瑶, 李芸, 杨治美, 黄铭敏, 龚敏.齐纳二极管电子辐照特性研究[J]. 电子与封装.2020,05:62-67
[4] J. Li, M. Huang*, Z. Yang, Y. Ma, M. Gong, Snapback-free reverse conducting IGBT with p-float and n-ring surrounding trench-collector[J]. Electronics Letters, 2020, 56(24): 1137-1140.
[5] Runze Zhang, Yun Li, Siting Ming, Yao Ma^? , Min Gonga, Wei Liu, Bingyan Liu, Zhimei Yang, Jinshun Bi^? , Kai Xi, Peng Wang, Jifeng Han.Au ion-induced atomic migration behavior in an HfO₂/Si stack[J]. Nuclear Instruments and Methods in Physics Research B, 474 (2020) 23–28
[6] S. Cao, X. Ke, S. Ming, D. Wang, T. Li, B. Liu, Y. Ma, Y. Li, Z. Yang, M. M. Huang, etc. Study of γ-ray radiation influence on SiO₂/HfO₂/Al2O₃/HfO₂/Al₂O₃ memory capacitor by C–V and DLTS[J]. Journal of Materials Science: Materials in Electronics, 2019, 30 (12), 11079-11085
[7] R. Li, M. Huang*, Z. Yang, Y. Ma, M. Gong, Carrier-Storage-Enhanced Superjunction IGBT with n-Si and p-3C-SiC pillars, Electronics Letters, 2019, 55(25): 1353-1355
[8] M. Huang, Y. Deng, L. Lai, Z. Yang, M. Gong. A vertical superjunction MOSFET with n-Si and p-3C-SiC pillars[J]. IEEE Transactions on Electron Devices, 2019, 66(9): 3922-3928
[9] Yun Li,Yao Ma, Wei Lin, Peng Dong, Zhimei Yang, Min Gong, Jinshun Bi, Bo Li, Kai Xi, Gaobo Xu. Study of γ-ray irradiation influence on TiN/HfO₂/Si MOS capacitor by C-V and DLTS[J]. Superlattices and Microstructures 120 (2018) 313-318
[10] M. Huang, B. Gao, Z. Yang, L, Lai, M. Gong. A carrier-storage enhanced Superjunction IGBT with ultralow loss and on-state voltage[J]. IEEE Electron Device Letters, 2018, 39(2): 264-267
[11] Yao Ma, Bo Gao*, Min Gong, Maureen Wills,Zhimei Yang, Mingyue Guan, Yun Li, High fluence swift heavy ion structure modification of the SiO₂/Si interface and gate insulator in 65 nm MOSFETs[J]. Nuclear Instruments and Methods in Physics Research B，2017,396:56-60
[12] Yun Li, Ping Su,Zhimei Yang, Yao Ma, Min Gong*，Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode[J]. Nuclear Instruments and Methods in Physics Research B，2016,388:1-4
[13] 杨翰飞，杨治美，廖熙，龚敏*，孙小松. Si基3C-SiC反向外延的选择生长和残余应力研究[J].四川大学学报(自然科学版)，2011，48（01）：121-125
[14] Yunsen Zhang,Zhimei Yang, Donglai Liu, Eryong Nie, Xue Bai, Zhiwei Li, Huabing Song, Yu Zhou, Wenyu Li, Min Gong, Xiaosong Sun*,Stable ultraviolet photoluminescence emission in n-type porous silicon[J]. Journal of Luminescence, 2010,130:1005-1010
[15] Yunsen Zhang,Zhimei Yang, Donglai Niu, Eryong Nie, Xue Bai, Zhifeng Jiao, Yong Jin, Min Gong, Xiaosong Sun*,Multiple UV-blue luminescence emissions in electrochemical anodic etched n-type silicon wafer[J]. Applied Surface Science, 2010,256:3325-3329
[16] 牟维兵，龚敏*，杨治美，6H-SiC材料与器件辐照效应的研究进展[J]. 材料导报，2009，23（3）：13-16
[17] 程顺昌, 杨治美, 钟玉杰, 何毅, 孙小松, 龚敏*.一种新型硅基3C-SiC的生长方法及光谱学表征[J]. 光散射学报, 2009,03:251-255
[18] Zhou Yu,Zhimei Yang, Shuai Wang, Yong Jin, Jun Gang Liu, Min Gong, and Xiaosong Sun*. Growth of GaN Nanorods via Au Catalyst-Assisted CVD[J]. Chem. Vap. Deposition, 2005, 11, 433-436

2 会议论文（时间倒序）
[1] Zhimei Yang, Yao Ma, Xin Zhao, Yun Li, Bo Gao, Chang Chen, Min Gong, Compared Current-Voltage Characteristics of Silicon and Cubic Silicon Carbide pn-junction based on the Silicon Substrate[C]. IEEE International nanoelectronics conference(INEC)，2016, Chengdu, May 9-11
[2] 杨治美*，李元梁，李芸，龚敏，马瑶，黄铭敏. 重离子辐照对4H-SiC肖特基势垒二极管界面的影响[C]. 全国半导体物理学术年会，2019年7月，中国，杭州
[3] 王少敏，胡敏，兰帆，龚敏，杨治美*. 基于Geant4和SRIM的4H-SiC 肖特基势垒二极管高能Bi离子辐照效应仿真应用[C]. 全国半导体物理学术年会，2019年7月，中国，杭州.

2 专利
杨治美，黄铭敏，刘薇，一种含有浮空区包围背面槽栅的逆导型IGBT，ZL 2019 1 **.6 授权.

获奖及荣誉
2 指导论文获四川大学本科优秀毕业论文一等奖, 2020.06
2 四川大学大学生创新创业教育优秀指导老师, 2018.12
2 2017-2018年度优秀共产党员, 2018.7