刘宝丹
性　别男最高学历博士研究生
职　称研究员专家类别硕士生导师
部　门沈阳材料科学国家（联合）实验室 功能薄膜与界面研究部
通讯地址辽宁省沈阳市沈河区文化路72号，中国科学院金属研究所，功能薄膜与界面研究部
邮政编码110016电子邮件baodanliu@imr.ac.cn
电　话+86-**传　真+86-**

简历：
　　教育经历：

　　1996.9-2000.7 辽宁工程技术大学 金属材料热处理 学士

　　2000.9-2003.3 河北工业大学 材料物理化学 硕士

　　2001.6-2003.3 中科院物理所 材料物理化学 硕士 （联合培养）

　　2003.4-2006.3 日本筑波大学 材料学 博士

　　工作经历：

　　2006.4-2008.3 日本古河机械金属株式会社 高级研究员

　　2008.4-2009.5 日本国家材料研究所 博士后研究员

　　2009.6-2011.11 大连理工大学 副教授

　　2011.12-至今 中国科学院金属研究所 项目研究员

研究领域：
　　1）功能薄膜与纳米新材料的生长设计与应用

　　2）纳米尺度绿色能源材料的探索

承担科研项目情况：
　　

　　Figure (a) STEM image of a (GaP)_1-x(ZnS)_x nanowire with the Au catalyst particle attached to its tip; (b~f) P, S, Ga, Zn and Au elemental maps, respectively; (g,h) Elemental profiles of a (GaP)_1-x(ZnS)_x nanowire taken along the radial and axial directions. The scale bar is 100 nm.

　　基于结构及晶格匹配原理，设计一系列具有独特性能和应用价值的多元半导体固溶体纳米结构。先后成功合成了一维GaP-ZnS及GaN-ZnO四元固溶体纳米线，并利用高分辨透射电镜及能谱技术对其进行结构、物相及成分确定。研究发现：在纳米尺度范围内形成固溶体时，形成单相的条件十分苛刻，而且固溶度同相应块体材料相比明显变窄；当增加掺杂相比例时，会出现明显的相分离而形成核壳结构，这与理论计算结果（~5%）一致。此外，在GaP-ZnS体系中，观察少量的Zn，S原子掺杂到GaP晶格中会诱发GaP纳米线由半导体向绝缘体的转变，相关机理还在进一步研究之中。

社会任职：


获奖及荣誉：
　　2004 第八届亚太电子显微镜会议青年科学家奖

　　2005 美国电子工程师协会（IEEE）青年科学家奖

　　2006 二〇〇五年度国家优秀自费留学生奖学金 证书编号：2005-146

　　2008 第九届亚太电子显微镜会议青年科学家奖

　　2012 所优秀学者

　　2012 中国科学院沈阳分院第三届青年科技人才奖

代表论著：
　　[1] B. D. Liu, Y. Bando, L. Z. Liu, J. J. Zhao, M. Masanori, X. Jiang and D. Golberg, “Solid-solution semiconductor nanowires in pseudobinary system” Nano. Letters. 2013, 13, 85-90.

　　[2] Tao Hu, Baodan Liu*, Fang Yuan, Zaien Wang, Nan Huang, Guifeng Zhang, Benjamin Dierre, Naoto Hirosaki, Takashi Sekiguchi, Yoshio Bando, Dmitri Golberg, and Xin Jiang. “Triangular ZnO Nanosheets: Synthesis, Crystallography and Cathodoluminescence” J. Nanosci. Nanotech. 2013, 13, 5744-5749.

　　[3] B. D. Liu, T. Hu, Z. E. Wang, L. Z. Liu, F. W. Qin, N. Huang, X. Jiang “Microstructure and cathodoluminescence study of GaN nanowires without/with P-doping” Crystal Res & Technol. 2012, 47, 207-212.

　　[4] B. D. Liu, Y. Bando, Z. E. Wang, C. Y. Li, M. Gao, X. Jiang, M. Mitome, D. Golberg. “Crystallography of novel T-shaped ZnS nanostructures and their cathodoluminescence” Crystal Growth & Design. 2010, 10, 4143-4147.

　　[5] B. D. Liu, Y. Bando, X. Jiang, C. Li, X. S. Fang, H. B. Zeng, T. Terao, C. C. Tang, M. Mitome, D. Golberg “Self-assembled ZnS Nanowire Arrays: Synthesis, in-situ Cu doping and Field emission” Nanotechnology, 2010，21，375601.

　　[6] B. D. Liu, Y. Bando, A. Wu, X. Jiang, B. Dierre, T. Sekiguchi, C. C. Tang, M. Mitome, D. Golberg.“352-nm ultraviolet emission from high-quality crystalline AlN whiskers” Nanotechnology, 2010, 21,075708 (杂志封面)

　　[7] Baodan Liu, Yoshio Bando, Mingsheng Wang, Chunyi Zhi, Xiaosheng Fang, Chengchun Tang, Masanori Mitome, Dmitri Golberg “Electron-beam irradiation induced conductivity in ZnS nanowires as revealed by in-situ TEM” J. Appl. Phys. 2009，106，034302-1-7.

　　[8] B. D. Liu, Y. Bando, B. Dierre, T. Sekiguchi, C. C. Tang, M. Mitome, D. Golberg. “Synthesis, structure and cathodoluminescence of ellipsoid-shaped ZnGa2O4 nanorods” Nanotechnology，2009，20，365705-1-6.

　　[9] B. D. Liu, Y. Bando, X. Jiang, M. Y. Liao, C. C. Tang, M. Mitome, D. Golberg. “Bicrystalline ZnS microbelts” Crystal Growth & Design. 2009, 9 (6), pp 2790–2793

　　[10] B. D. Liu, Y. Bando, M. S. Wang, C. C. Tang, M. Mitome, D. Golberg. “Crystallography and elasticity of individual GaN nanotubes” Nanotechnology，20 (2009) 185705-1-6

　　[11] B. D. Liu, Y. Bando, M. S. Wang, D. Golberg. “Synthesis and in-situ TEM transport measurements of individual GaN nanowires and nanotubes ” J. Nanosci. Nanotechnol. 2010, 10, 3945-3951.

　　[12] Baodan Liu, Yoshio Bando, Chengchun Tang, Dimitri Golberg, Kazunari Yamaura, and Eiji Takayama-Muromachi. “Mn-Si-catalyzed synthesis and tip-end-induced room-temperature ferromagnetism of SiC/SiO2 core-shell heterostructures” J. Phys. Chem. C 112 (2008) 18911-18915.



近期国际国内会议报告及任职等：

　　[1] Baodan Liu, Nan Huang, Dmitri Golberg, Yoshio Bando, Xin Jiang, “Synthesis and TEM study of pseudobinary solid-solution semiconductor nanowires” IUMRS-ICEM2012, Sep. 22-26, 2012, Yokohama, Japan (口头报告)

　　[2] Baodan Liu, Tao Hu, Zaien Wang, Xin Jiang, “Electrical transport tuning of ZnS nanowires by electron beam irradiation” ICON 2011, Dec. 7-9, 2011, Beijing, China (口头报告)

　　[3] Baodan Liu, Tao Hu, Zaien Wang, Xin Jiang, “Nano-S&T-2011” Oct. 22-26, 2011, Dalian, China (口头报告)

　　[4] Baodan Liu, Yoshio Bando, Aimin Wu, Xin Jiang, Dimitri Golberg “The 7th International Forum on Advanced Material Science and Technology” June 22-28, 2010, Dalian, China (口头报告)

　　[5] Baodan Liu, Yoshio Bando, Aimin Wu, Xin Jiang, Dimitri Golberg “17th International Conference on Ion Beam Modification of Materials” Aug. 22-27, 2009, Montréal, Canada (口头报告)

　　[6] Baodan Liu, Yoshio Bando, Dimitri Golberg, “MANA International Symposium 2009” Nov 25-27, 2009, Tsukuba, Japan (口头报告)

　　[7] Baodan Liu, Yoshio Bando, Masanori Mitome, Chengchun Tang, Dimitri Golberg, “The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008)” Dec 9-13, 2008, Nagoya, Japan (口头报告)

　　[8] Baodan Liu, Yoshio Bando, Masanori Mitome, Chengchun Tang, Dimitri Golberg, “The 9th Asia-Pacific Microscopy Conference” Nov 2-7, 2008, Jeju, South Korea. (口头报告)

　　[9] Baodan Liu, Yoshio Bando, Masanori Mitome, Chengchun Tang, Dimitri Golberg, “14th International Conference on Thin Films & Reactive Sputter Deposition 2008” Nov 17-20, 2008, Ghent, Belgium. (口头报告)

　　[10] Baodan Liu, Ukata Nishikori, the 54th Spring Meeting, JSAP and Related Societies. March, 27-30, 2007, Kanagawa, Japan

近期获得专利：

　　(1) Xin Jiang, Baodan Liu, “A method to reduce the defect density of GaN nanowire arrays”

　　(2) W.X. Li, J. Shen, B. D. Liu, G.H. Wu, F.M. Yang. “Non-interstitional 3:29 rare-earth permanent magnetic materials and the synthesis methods” Application number **.2; Publication Number: **

　　(2) Bando Yoshio, Liu Baodan, Tang Chengchun. “Method of manufacturing manganese-doped gallium nitride nano-wire” Application number: JP** **; Publication number: JP**

　　(3) Tetsuka Homou, Liu Baodan, “Instrument and crucible materials for AlN growth by sublimation method” Application No. JP 2008-266115

　　(4) Tetsuka Homou, Liu Baodan “A new design of instrument, crucible structure and insulators for AlN sublimation growth” Application No. JP 2008-266116

　　(5) Bando Yoshio, Fang Xiaosheng, Meiyong Liao, Ujjal Gautam, Benjamin Dierre, Takashi Sekiguchi, Dmitri Golberg, Baodan Liu “Method of manufacturing ZnS nanobelts and their application as UV-sensor” Application No. JP 2011-12244

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