联系方式：
电话： **
邮箱： sdwu@yzu.edu.cn
地址：扬州市四望亭路180号，扬州大学物理科学与技术学院，225002
办公地点：物理楼210室
一、导师简历：
1．教育经历
2002.9-2005.6 中国科学院物理研究所, 获凝聚态物理专业博士学位
1999.9-2002.6 华中科技大学物理系, 获光学专业硕士学位
1995.9-1999.6 湖北师范学院物理系，获物理教育专业理学学士学位
2. 工作经历
2010.8-至今扬州大学物理科学与技术学院
2006.5–2008.5 日本大阪大学电子工程系JSPS 博士后
3. 兼任主要社会职务：
二、研究领域：
1、研究方向：
（1）半导体低维结构的物理特性计算
（2）半导体自旋电子学
2、研究内容
　　（1）研究半导体纳米结构中激子和双激子效应，通过量子调控将双激子态调回到简并态从而实现纠缠光子对。
（2）研究半导体纳米结构中自旋和量子比特。
3、科研项目
　　江苏省高校自然科学研究面上项目：InAs/GaAs量子点自旋动力学与自旋调控的理论研究
　　国家级大学生创新创业训练计划资助项目：GaN/InGaN太阳能电池性能的研究
三、研究成果
1、专利技术
2、获奖
　　获2012-2013年度扬州大学最受学生欢迎的任课教师
　　获2012-2013年度扬州大学最受学生欢迎的班主任
　　获2003年湖北省优秀硕士学位论文奖
3、发表的主要论文
　　[1] Shudong Wu*, Lichun Wang, Huoquan Li, and Xianghua Zeng, Tuning of the intersubband absorption in a shallow InAs/InP quantum wire by a transverse electric field, Superlattices and Microstructures 67, 33 (2014).
　　[2] Shudong Wu* and Weiwei Xia, Exciton polarizability and absorption spectra in CdSe/ZnS nanocrystal quantum dots in electric fields, J. Appl. Phys. 114, 043709 (2013).
　　[3] Shudong Wu* and Stanko Tomi?, Exciton states and oscillator strengths in a cylindrical quantum wire with finite potential under transverse electric field, J. Appl. Phys. 112, 033715 (2012).
　　[4] Shudong Wu* and Li Wan, Electronic structures in a CdSe spherical quantum dot in a magnetic field: Diagonalization method and variational method, J. Appl. Phys. 111, 063711 (2012).
　　[5] Shudong Wu*and Li Wan, Exciton states and excitonic absorption spectra in a cylindrical quantum wire under transverse electric field, Eur. Phys. J. B. 85, 12 (2012).
　　[6] Shudong Wu* and Li Wan, Thermal dependence of the optical gain and threshold current density of GaInNAs/GaAs/AlGaAs quantum well lasers, J. Appl. Phys. 110, 123109 (2011).
　　[7] Shudong Wu*, Exciton binding energy and excitonic absorption spectra in a parabolic quantum wire under transverse electric field, Physica B 406, 4634 (2011).
　　[8] Shudong Wu*, Yongge Cao, Stanko Tomi?, and Fumitaro Ishikawa, The optical gain and radiative current density of GaInNAs/GaAs/AlGaAs separate confinement heterostructure quantum well lasers, J. Appl. Phys. 107, 013107 (2010).
　　[9] Shudong Wu, Zhi Huang, Yuan Liu, Qiufeng Huang, Wang Guo, Yongge Cao, The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells, Physica E 41, 1656 (2009) .
　　[10] Shudong Wu, Zhi Huang, Yuan Liu, Qiufeng Huang, Wang Guo, Yongge Cao, The effects of indium segregation on exciton binding energy and oscillator strength in GaInAs/GaAs quantum wells, Superlattices and Microstructures 46, 618 (2009).
　　[11] Shudong Wu*, M.Kato, M.Uchiyama, K. Higashi, F. Ishikawa, and M. Kondow, N2 gas flow driven unintentional incorporation of Al during the growth of molecular beam epitaxy, Applied Physics Express 1, 035004 (2008).
　　[12] Shudong Wu*, M.Kato, M.Uchiyama, K. Higashi, F. Ishikawa, and M. Kondow, Effect of the unintentional incorporation of Alduring the molecular beam epitaxial growth of GaInNAs quantum well. Phys. Stat. Sol. (C) 5, 2736 (2008).
　　[13] Shudong Wu, W.X. Wang, L.W. Guo, Z.H. Li, X.Z. Shang, F. Liu, Q. Huang, and J.M. Zhou, Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy, Journal of Crystal Growth, 278, 548 (2005).
　　[14] Shudong Wu, L.W. Guo, W.X. Wang, Z.H. Li, X.Z. Shang, H.Y. Hu, Q. Huang, J.M. Zhou, The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy, Journal of Crystal Growth, 270, 359 (2004).