基本资料

姓名： 钱钦松 性别： 男
学历： 博士 生日： 1983.09
职称： 副教授 职务：

电话： Email： qianqinsong@seu.edu.cn

研究方向

功率集成电路与系统的拓扑、环路控制与可靠性，基于GaN/SiC等第三代半导体器件的高功率密度开关变换器研究等。

个人简历

钱钦松，副教授，硕士生导师。2012年留校工作，主要从事功率集成电路与系统的拓扑、环路控制与可靠性等方面的教学与研究工作。先后主持国家/江苏省自然基金、国家/江苏省重点研发项目等纵向项目6项，主持与企业横向合作项目5项；参加国家“核高基”重大专项、国家“863”项目、国家自然科学基金、江苏省项目以及其他科研合作项目10余项；获2014年“教育部技术发明一等奖”一项（第三完成人），获2014年“江苏省优秀博士论文”一篇；在IEEE Trans. on Electron Devices、IEEE Trans. on Power Electronics等在国内外核心刊物和国际重要学术会议上发表论SCI、EI收录论文40余篇（其中第一作者18篇）；获中国发明专利授权71项（其中第一发明人专利授权29项），获美国授权专利3项。

研究成果

[1]Qian Q, Zhang T, Sun W, et al. Impact of stray inductances of the power loop on false trigger-on in the zero-voltage-switching full-bridge converter[J]. International Journal of Circuit Theory & Applications, 2017, 45(3):392-406.
[2]Qian Q, Sun W, Zhang T, et al. A Voltage-fed Single-stage PFC Full-bridge Converter with Asymmetric Phase-shifted Control for Battery Chargers[J]. Journal of Power Electronics, 2017, 17(1):31-40.
[3]Qian Q, Sun W, Yu J. Fast switch fault diagnosis for PWM DC–DC low power converters[J]. Ieej Transactions on Electrical & Electronic Engineering, 2017, 12(5).
[4]Qian Q, Yu J, Su C, et al. A LLC resonant converter with dual resonant frequency for high light load efficiency[J]. International Journal of Electronics, 2017.
[5]Qian Q, Yu J, Zhu J, et al. Isolated gate driver for SiC MOSFETs with constant negative off voltage[C]// Applied Power Electronics Conference and Exposition. IEEE, 2017:1990-1993.
[6]Qian Q, Liu S, Sun W, et al. A Robust W-Shape-Buffer LIGBT Device With Large Current Capability[J]. IEEE Transactions on Power Electronics, 2014, 29(9):4466-4469.
[7]Qian Q, Huang T, Liu S, et al. Linear Drain Current Degradation of FG-pLEDMOS Transistor Under Pulse Gate Stress With Different Rising and Falling Edges[J]. IEEE Transactions on Device & Materials Reliability, 2014, 14(1):229-233.
[8]Qian Q, Sun W, Wei S, et al. The Investigation of Electrothermal Characteristics of High-Voltage Lateral IGBT for ESD Protection[J]. IEEE Transactions on Device & Materials Reliability, 2012, 12(1):146-151.
[9]Qian Q, Liu S, Wan W, et al. Reliability Concern on Extended E-SOA of SOI Power Devices With P-Sink Structures[J]. IEEE Transactions on Device & Materials Reliability, 2013, 13(1):161-166.
[10]Qian Q, Sun W, Liu S, et al. Linear drain current degradations of FG-pLEDMOS transistor under different AC stress conditions[J]. 2012, 7(2):303-306.
[11]Qian Q, Sun W, Han D, et al. The optimization of deep trench isolation structure for high voltage devices on SOI substrate[J]. Solid-State Electronics, 2011, 63(1):154-157.
[12]Qian Q, Sun W, Zhu J, et al. Investigation of the shift of hot spot in lateral diffused LDMOS under ESD conditions[J]. Microelectronics Reliability, 2010, 50(12):1935-1941.
[13]Qian Q, Sun W, Zhu J, et al. A Novel Charge-Imbalance Termination for Trench Superjunction VDMOS[J]. IEEE Electron Device Letters, 2010, 31(12):1434-1436.
[14]Qian Q, Sun W, Liu S, et al. Novel Hot-Carrier Degradation Mechanisms in the Lateral Insulated-Gate Bipolar Transistor on SOI Substrate[J]. IEEE Transactions on Electron Devices, 2011, 58(4):1158-1163.
[15]Qian Q, Sun W, Liu S, et al. Linear drain current degradations of FG-pLEDMOS transistor under different AC stress conditions[C]// International Symposium on Power Semiconductor Devices and ICS. IEEE, 2012:303-306.
[16]Qian Q, Sun W, Li H, et al. Reliability investigations and improvements of the pLEDMOS for PDP data driver ICs[J]. Semiconductor Science Technology, 2011, 26(5):055001.