基本资料

姓名： 刘斯扬 性别： 男
学历： 博士 生日： 1987.05
职称： 副研究员 职务：

电话： Email： liusy2017@seu.edu.cn

研究方向

主要从事功率半导体器件设计、可靠性及模型等方面的研究工作。
个人简历

刘斯扬，副研究员，硕士生导师，江苏省“333高层次人才培养工程”培养对象（第三层次）。主持国家自然科学基金、装备预研教育部联合基金、江苏省自然科学基金等项目9项。在IEEE Electron Device Letters及IEEE Trans. on Electron Devices等国际权威期刊发表SCI论文45篇（其中第一作者20篇），在功率半导体领域顶级会议ISPSD等国际会议发表论文15篇（其中第一作者8篇），获得美国专利3项，中国发明专利32项。研究成果“硅基功率集成的可靠性关键技术与应用” 获得2013年教育部技术发明一等奖，2016年获得首届电子学会优秀博士学位论文奖及江苏省优秀博士学位论文奖。目前是IEEE IPFA国际会议TPC Member，IEEE TED、Microelectronics Reliability及Electronics Letters等国际期刊审稿人。

研究成果

[1].Siyang Liu, Hanqi Yang, Zhichao Li, Weifeng Sun, “Switch-OFF Avalanche-Breakdown-Induced Electrical Degradations of RF-LDMOS Transistor for SMPAs Applications”, IEEE Trans. on Electron Devices, 2018, Vol. 65, No.10, p4719-4723.
[2]. Siyang Liu, Ran Ye, Weifeng Sun, Longxing Shi, “A Novel Lateral DMOS Transistor With H-Shape Shallow-Trench-Isolation Structure”, IEEE Trans. on Electron Devices, 2018, Vol. 65, No.11, p5218-5211.
[3]. Siyang Liu, Weifeng Sun, Qinsong Qian, Jiaxing Wei, Jiong Fang, Chi Zhang, Longxi Shi, “A Review on Hot-carrier-induced Degradation of Lateral DMOS Transistor”, IEEE Transactions on Device and Materials Reliability, 2018, Vol.18, No.2, p298-312.
[4]. Siyang Liu, Chunwei Zhang, Kaikai Xu, Weifeng Sun, “Hot-carrier-induced Degradations Investigations for 600V SOI-LIGBT by an Improved Charge Pumping Solution”, IEEE Transactions on Electron Devices, 2017, Vol. 64, No.2, p634-637.
[5]. Siyang Liu, Xiaofei Ren, Yunchao Fang, Weifeng Sun, “Hot-carrier-induced Degradations and Optimizations for Lateral DMOS Transistor with Multiple Floating Poly-gate Field Plates”, IEEE Transactions on Electron Devices, 2017, Vol. 64, No.8, p3275-3281.
[6]. Siyang Liu, Chunde Gu, Jiaxing Wei, Qinsong Qian, Weifeng Sun, Alex Q. Huang, “Repetitive Unclamped-inductive-switching-induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs”, IEEE Transactions on Electron Devices, 2016, Vol. 63, No.11, p4331-4338.
[7]. Siyang Liu, Chao Yang, Weifeng Sun, Qinsong Qian, Yu Huang, Xing Wu, Minjun Wu, Qingling Yang and Litao Sun, “Repetitive-avalanche-induced Electrical Parameters Shift for 4H-SiC Junction Barrier Schottky Diode”, IEEE Transactions on Electron Devices, 2015, Vol. 62, No.2, p601-605.
[8]. Siyang Liu, Ran Ye, Weifeng Sun, Chunwei Zhang, Jiaxing Wei, Wei Su and Aijun Zhang, “Electrical Parameters Degradations and Optimizations of SOI-LIGBT Under Repetitive Unclamped-Inductive-Switching Conditions”, IEEE Transactions on Electron Devices, 2016, Vol. 63, No.4, p1644-1649.
[9]. Siyang Liu, Weifeng Sun, Chunwei Zhang, Xiaofei Ren, “OFF-State Inrush Current Induced Electrical Parameter Degradations for High-Voltage Lateral DMOS Transistors”, IEEE Transactions on Electron Devices, 2015, Vol. 62, No.11, p3767-3773.
[10]. Siyang Liu, Chunwei Zhang, Weifeng Sun, Wei Su, Shaorong Wang, Shulang Ma and Yu Huang, “Anomalous Output Characteristic Shift for the n-type Lateral Diffused Metal-oxide Semiconductor Transistor with Floating P-top Layer”, Applied Physics Letters, 104, 2014, 153512.
[11]. Siyang Liu, Weifeng Sun, Weijun Wan, Wei Su, Shaorong Wang and Shulang Ma, “Anomalous Hot-Carrier-Induced Linear Drain Current Degradation of LDMOS Under Pulse Gate Stress With Different Amplitudes”, IEEE Electron Device Letters, 2013, Vol. 34, No.6, p786-788.
[12]. Siyang Liu, Weifeng Sun, Rongxia Zhu, Tingting Huang and Chunwei Zhang, “Off-State Stress Degradation Analysis and Optimization for the High-Voltage SOI-pLEDMOS With Thick Gate Oxide”, IEEE Transactions on Electron Devices, 2013, Vol. 60, No.11, p3632-3638.