万青信息电子学系 博士生导师



个人简历
万青，男，1976年出生，南京大学电子科学与工程学院教授，国家****和****基金获得者。1998年本科毕业于浙江大学材料系，2004年在中国科学院上海微系统与信息技术研究所获微电子学与固体电子博士学位。之后在英国剑桥大学、美国密西根大学和斯坦福大学从事博士后科研和访问****。回国先后在湖南大学物理与微电子学院、科学院宁波材料所从事科研和教学工作。2013年4月加盟南京大学电子科学与工程学院。主要从事半导体微纳结构与新概念器件应用研究。在氧化物纳米线传感器、低压双电层晶体管、神经形态器件领域取得了系列创新科研成果，并在国际上产生了广泛的影响。累计在Nature Communications、Advanced Materials、Nano Letters、Small、IEEE Electron Device Letters、Applied Physics Letters等权威学术杂志上发表论文200余篇，SCI他引超过1万次，连续多年被评为中国高被引用****。个人先后荣获中科院院长特别奖、全国百篇优秀博士论文、中国青年科技奖、教育部自然科学一等奖、浙江省科学技术一等奖、青年科学之星银奖。个人先后入选中科院****择优支持、江苏省双创人才计划、中组部国家****（青年拔尖人才，中青年科技领军人才）。近年来主持和参加了国家 973、国家自然科学基金、省部重点和国家****基金项目。

研究方向
1)神经形态器件及其类脑芯片应用；2)氧化物薄膜晶体管及其新型平板显示应用。

主要课程
1）固体物理导论；2）功能薄膜基础

代表成果
1）Chenxi Zhang, Sheng Li, Yongli He, Chunsheng Chen, Shanshan Jiang, Xiaoqian Yang, Xinran Wang, Lijia Pan and Qing Wan*, “Oxide Synaptic Transistors Coupled with Triboelectric Nanogenerators for Bio-inspired Tactile Sensing Application”. IEEE Electron Device Letters. 41(4) 617-620 (2020).
2）Yongli He, Sha Nie, Rui Liu, Yi Shi, and Qing Wan*, “Indium-Gallium-Zinc-Oxide Schottky Synaptic Transistors for Silent Synapse Conversion Emulation”, IEEE Electron Device Letters. 40(1) 139 - 142 (2019).
3）Yongli He, Sha Nie, Rui Liu, Shanshan Jiang, Yi Shi, and Qing Wan*, “Spatiotemporal Information Processing Emulated by Multi-terminal Neuro-transistor Networks”, Advanced Materials. 31(21)，** (2019).
4) Shanshan Jiang, Sha Nie, Yongli He, Rue Liu, Chunsheng Chen, and Qing Wan*, Emerging synaptic devices: from two-terminal memristors to multiterminal neuromorphic transistors, Materials Today Nano. 8, 100059 (2019)
5) Jie Jiang, Junjie Guo, Xiang Wan, Yi Yang, Haipeng Xie, Dongmei Niu, Junliang Yang, Jun He,* Yongli Gao, and Qing Wan*, “2D MoS2 Neuromorphic Devices for Brain-Like Computational Systems”. Small. 13, **, (2017).
6) Changjin Wan, Wei Wang, Liqiang Zhu, Yanghui Liu, Ping Feng, Zhaoping Liu, Yi Shi, and Qing Wan*, “Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Transistors on Flexible Conducting Graphene Substrates”, Advanced Materials. 28, 5878-5885 (2016).
7) Changjin Wan, Liqiang Zhu, Yanghui Liu, Ping Feng, Zhaoping Liu, Hailiang Cao, Peng Xiao, Yi Shi, and Qing Wan*, “Proton Conducting Graphene Oxide Coupled Neuron Transistors for Brain-Inspired Cognitive Systems”. Advanced Materials. 28, 3557 (2016).
8) Yanghui Liu, Liqiang Zhu*, Ping Feng, Yi Shi, and Qing Wan*, “Freestanding Artificial Synapses Based on Laterally Proton-Coupled Transistors on Chitosan Membranes”, Advanced Materials. 27, 5599 (2015).
9) Jumei Zhou, Ning Liu, Liqiang Zhu, Yi Shi, and Qing Wan*, “Energy-Efficient Artificial Synapses Based on Flexible Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors”, IEEE Electron Device Letters. 36, 2, 198 (2015).
10)Liqiang Zhu, Changjin Wan, Liqiang Guo, Yi Shi, and Qing Wan*. “Artificial Synapse Network on Inorganic Proton Conductor for Neuromorphic Systems” Nature Communications, 5. 3158 (2014)
11)Jumei Zhou, Changjin Wan, Liqiang Zhu, Yi Shi, and Qing Wan*, “Synaptic behaviors mimicked in flexible oxide-based transistors on plastic substrates”, IEEE Electron Device Letters. 34，1433-1435 (2013).
12) Jie Jiang, Qing Wan*, Jia Sun, and Aixia Lu, “Ultralow-voltage transparent electric-double-layer thin-film transistors processed at room-temperature”, Applied Physics Letters.95, 152114 (2009).
13) Q. Wan, M. Wei, D. Zhi, J. L. MacManus-Driscoll, and M. G. Blamire. “Epitaxial growth of vertically aligned and branched single crystalline tin-doped indium oxide nanowire arrays”, Advanced Materials, 18, 234 (2006).
14) Z. Ying, Q. Wan*, H. Cao, Z. T. Song, S. L. Feng, “Characterization of SnO2 nanowires as an anode material for Li-ion batteries”, Applied Physics Letters 87, 113108 (2005).
15) Q. Wan, Q.H. Li, Y. J. Chen, T. H. Wang, X. L. He, J. P. Li, and C. L. Lin, “Fabrication and ethanol sensing characteristics of ZnO nanowires gas sensor”, Applied Physics Letters, 84, 3654 (2004).
16) Q.Wan, K.Yu, T.H.Wang, C.L.Lin, “Low-field electron emission from tetrapod-like ZnO nanostructures synthesized by rapid evaporation”, Applied Physics Letters, 83, 2253 (2003).



联系方式
电话：
邮件：wanqing@nju.edu.cn,wanqing7686
信箱：
办公地址：南京大学仙林校区电子楼322