Study on the characterization and technology of Cu thin-film temperature sensor fabricated on aluminum alloy
QIAO Ying-jie, CUI Xin-fang, LIU Rui-liang, LIAN Xiao-zheng
School of Material Science and Chemical Engineering. Harbin Engineering University, Harbin 150001, China
Abstract:
In the present study, anodic films on aluminium alloy was used as the dielectric layer for Cu thin-film temperature sensor, and then Cu film was deposited by unbalanced magnetron sputtering ion plating as the sensitive layer. Microstructure and surface morphologies of Cu film were investigated by optical microscope (OM), atomic force microscope (AFM) and scanning electron microscope (SEM). Electrical properties of Cu thin-film temperature sensor were tested by four-point probe technique and Digit Multimeter. The results showed that the surface roughness of anodic films can be reduced from Ra 58096 nm to Ra 16335 nm by proper polishing. Continual Cu stripes can be obtained both on polished anodic alumina film and smooth alumina wafer by etching after Cu film annealing. The resistivity of Cu films before and after 300 ℃ as well as 400 ℃ annealing are 1248 mΩ·cm, 548 mΩ·cm and 483 mΩ·cm, respectively. The resistances of Cu thin-film temperature sensor in 70 ℃ and 0 ℃ are 9465 Ω and 76115 Ω respectively. The temperature coefficient of resistivity (TCR) of the sensor is 3479 ×10-6／℃.
Key words: thin-film temperature sensor annealing morphology electrical properties
DOI：10.11916/j.issn.1005-9113.2012.03.019
Clc Number:TN371
Fund:
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Study on the characterization and technology of Cu thin-film temperature sensor fabricated on alumi
本站小编 哈尔滨工业大学/2019-10-23
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