姓 名：陈实
职称：教授
专业方向：微电子工程系
个人简介：

专业技术职务：教授
通讯地址：武汉市珞喻路1037号，
华中科技大学光学与电子信息学院
办公电话：
E-mail:s_chen@mail.hust.edu.cn
最后学历：2001年10月，在华中科技大学博士研究生毕业
最高学位：2001年12月，在华中科技大学获得工学博士学位
工学博士，华中科技大学光学与电子信息学院教授。2001毕业于华中科技大学，获微电子学与固体电子学专业工学博士学位，2007年从华中科技大学控制科学与工程博士后工作站出站，并留校工作。一直从事电子功能材料（铁电、压电、磁性材料）及薄膜传感器件的研究工作，作为项目负责人先后承担国家自然科学基金项目两项、军工和民用横向项目多项，作为第二负责人承担国家重点军事预研项目、国防预研基金项目及国家安全部重大科技攻关项目等项目，作为主要成员参与863计划项目、973计划子项目、湖北省自然科学基金重大项目等多个课题的研究工作。在国内外重要期刊和学术会议发表学术论文30余篇，获国家专利5项。
近五年发表主要论文（标*为通讯作者）：
1. Shi Chen, Xiaofei Yang, Jun Ouyang, Gengqi Lin,Fang Jin, Bei Tong, Fabrication and characterization of shape anisotropy AlN/FeCoSiB magnetoelectric composite films, Ceramics International, 40 (2014) 3419–3423.
2. Bei Tong, Xiaofei Yang, Jun Ouyang, Gengqi Lin, Yue Zhang andShi Chen*, Magnetoelectric response of AlN/[(Fe90Co10)78Si12B10+Terfenol-D] composite films, Journal of Applied Physics, 115 (2014) 17D904.
3. Yue Zhang, Rui Xiong, Zhi Yang, Wei Yu,Benpeng Zhu,Shi Chen*and Xiaofei Yang, Enhancement of Interparticle Exchange Coupling in CoFe₂O₄/ CoFe₂Composite Nanoceramics Via Spark Plasma Sintering Technology, Journal of the American Ceramic Society, 96 [12] (2013) 3798–3804.
4. B. Tong, X.F. Yang, J. Ouyang, G.Q. Lin,S. Chen*,Giant converse magnetoelectric effect of AlN-(Fe₉₀Co₁₀)₇₈Si₁₂B₁₀thin film composites, Journal of Alloys and Compounds, 563 (2013) 51–54.
5. Bei Tong, Xiaofei Yang, Zhe Guo, Kun Li, Jun Ouyang, Gengqi Lin,Shi Chen*, Preparation and characterization of AlN/ FeCoSiB magnetoelectric thin film composites, Ceramics International, 39 (2013) 6853–6859.
6. Yue Zhang, Zhi Yang, Ben-Peng Zhu, Jun Ou-Yang, Rui Xiong, Xiao-Fei Yang,Shi Chen*, Exchange bias effect of Co_3?xFe_xO₄(x= 0, 0.09, 0.14 and 0.27)，Journal of Alloys and Compounds，514 (2012) 25–29.
7. 吴少兵，陈实^*，李海，杨晓非，TMR与GMR传感器1/f 噪声的研究进展, 物理学报,61(9) (2012) 097504
8. Yue Zhang,Zhi Yang,Benpeng Zhu,Shi Chen,Xiaofei Yang,Rui Xiong_,,Yong Liu, Exchange-spring effect in CoFe₂O₄/CoFe₂composite nano-particles, Journal of Alloys and Compounds, 567 (2013) 73–76.
9. S. B. Wu,T. Zhu,X. F. Yang andS. Chen,The anomalous Hall effect in the perpendicular Ta/CoFeB/MgO thin films, Journal of Applied Physics, 113 (2013) 17C717.
10. S. B. Wu,X. F. Yang,S. ChenandT. Zhu,Scaling of the anomalous Hall effect in perpendicular CoFeB/Pt multilayers, Journal of Applied Physics, 113 (2013) 17C119.
11.Yong Hu, Guo-Qin Ge,Shi Chen, Xiao-Fei Yang, and You-Ling Chen , Cross-Kerr-effect induced by coupled Josephson qubits in circuit quantum electrodynamics, PHYSICAL REVIEW A, 84 (2011) 012329.
12. Yang Liu, Xuefeng Ruan, Benpeng Zhu,Shi Chen, Zhihong Lu, Jing Shi, Rui Xiong_,CoFe₂O₄/BaTiO₃Composites via Spark Plasma Sintering with Enhanced Magneto-electric Coupling and Excellent Anisotropy, Journal of the American Ceramic Society, 94 [6] (2011) 1695–1697.
13. Lei Yu,Shi Chen*, Jun Ouyang, Chao Zuo, Xinguo Chen, Shaobin Wu, Xiaofei Yang, Error compensation and implementation of embedded high-precision magnetometer, Proceedings of the 2010 International Conference on Electrical and Control Engineering. Wuhan, China. 2010. Los Alamitos, CA, USA: IEEE Computer Society, 2010: 911-914. (EI: **)
14. Jun Ouyang,Shi Chen*, Lei Yu, Chao Zuo, Xinguo Chen, Shaobing Wu, Xiaofei Yang. Compensation Method of Cross-axis Effect for AMR Sensor，Proceedings of the 2010 International Conference on Electrical and Control Engineering. Wuhan, China. 2010. Los Alamitos, CA, USA: IEEE Computer Society, 2010: 603-606. (EI: **)
15. Shaobin Wu,Shi Chen*, Jun Ouyang, Chao Zuo, Lei Yu, Xiaofei Yang. Research on Fabrication Process of MEMS-based Micro-fluxgate Sensor，Proceedings of the 2010 First International Symposium on Spintronic Devices and Commercialization. Beijing, China. 2010.
16. Chao Zuo,Shi Chen*, Shaobin Wu, Jun Ouyang, Lei Yu, Xiaofei Yang. Design of Interface ASIC for Micro-fluxgate Sensor, Proceedings of the 2010 First International Symposium on Spintronic Devices and Commercialization. Beijing, China. 2010.
联系方式：
电话：
Email: s_chen@mail.hust.edu.cn
办公地点：西一楼201