教师个人信息姓名：江灏性别：男职称：教授学位：研究生毕业学校：日本名古屋工业大学联系电话：020-39943836电子邮件：stsjiang@mail.sysu.edu.cn个人主页：所在学科主要研究方向学科:微电子学
研究方向:宽禁带化合物半导体材料与器件
研究重点:
1.GaN基半导体材料(GaN/AlGaN/InGaN/AlInN/AlInGaN)的MOCVD外延生长及其特性表征；
2.GaN基LED外延技术研究；
3.高探测灵敏度GaN/AlGaN可见光盲/太阳盲紫外光探测器的制作及其性能评价；
4.紫外单光子探测技术研究.
每年计划招收博士后1-2名，博士研究生2名，硕士研究生2名。教学科研情况（1）本科教学：半导体材料
（2）研究生教学：半导体外延技术承担课题*中山大学“百人计划”二层次引进人才科研启动项目
*国家自然科学基金面上项目——AlGaN日盲紫外雪崩光电二极管的研究
*国家“863计划”创新研究项目1-3期、深化论证
*广东省重大科技专项——大功率白光LED关键制造技术研究
*广东省粤港关键领域重点突破项目——LED外延与芯片产业化技术
*国家“973计划”课题——AlGaN基UV探测和ISBT双色探测材料及其器件应用发表论文*ZhiyuanZheng,ZiminChen,YingdaChen,ShanjinHuang,BingfengFan,YulunXian,WeiqingJia,ZhishengWu,GangWang,andHaoJiang,"AnalysisandmodelingoftheexperimentallyobservedanomalousmobilitypropertiesofperiodicallySi-delta-dopedGaNlayers",Appl.Phys.Lett.100,212102(2012).
*YulunXian,ShanjinHuang,ZhiyuanZheng,BingfengFan,ZhishengWu,HaoJiang，andGangWang,"Effectsofgrowthpressureonthepropertiesofp-GaNlayers",JournalofCrystalGrowth325(2011)32.
*ZhiyuanZheng,ZiminChen,YulunXian,BingfengFan,ShanjinHuang,WeiqingJia,ZhishengWu,GangWang,a)andHaoJiangb)“Enhancedelectrostaticdischargepropertiesofnitride-basedlight-emittingdiodeswithinsertingSi-delta-dopedlayers”,Appl.Phys.Lett.99,111109(2011).
*ShanjinHuang,YulunXian,BingfengFan,ZhiyuanZheng,ZiminChen,WeiqingJia,HaoJiang,andGangWang,"ContraryluminescencebehaviorsofInGaN/GaNlightemittingdiodescausedbycarriertunnelingleakage",J.Appl.Phys.110,064511(2011).
*ShanjinHuang,BingfengFan,YulunXian,ZhiyuanZheng,ZhishengWu,HaoJiang,andGangWang,"InfluenceoftheTEGaflowontheopticalandstructuralpropertiesofInGaN/GaNmultiplequantumwellsgrownbyMOCVD",JournalofCrystalGrowth314(2011)202.
*LuSun,JilinChen,JianfeiLi,andHaoJiang,"AlGaNsolar-blindavalanchephotodiodeswithhighmultiplicationgain",Appl.Phys.Lett.97,191103(2010).
*S.Senda,H.Jiang,andT.Egawa,"AlInN-basedultravioletphotodiodegrownbymetalorganicchemicalvapordeposition",Appl.Phys.Lett.92,203507(2008).
*H.JiangandT.Egawa,“LowdarkcurrenthighperformanceAlGaNsolar-blindp-i-nphotodiodes”,Jpn.J.Appl.Phys.,Part147,1541(2008).
*H.JiangandT.Egawa,“HighqualityAlGaNsolar-blindSchottkyphotodiodesfabricatedonAIN/sapphiretemplate”,Appl.Phys.Lett.90,121121(2007).
*H.Jiang,T.Egawa,andH.Isikawa,“AlGaNsolar-blindSchottkyphotodiodesfabricatedon4H-SiC”,IEEEPhotonicsTechnol.Lett.18,1353(2006).
*H.JiangandT.Egawa,“DemonstrationoflargeactiveareaAlGaNsolar-blindSchottkyphotodiodeswithlowdarkcurrent”,Electron.Lett.42,1120(2006).
*Y.Liu,T.Egawa,andH.Jiang,“Enhancement-modequaternaryAlInGaN/GaNHEMTwithnon-recessed-gateonsapphiresubstrate”,Electron.Lett.42,884(2006).
*Y.Liu,H.Jiang,T.Egawa,B.Zhang,andH.Ishikawa,“AlcompositiondependentpropertiesofquaternaryAlInGaNSchottkydiodes”,J.Appl.Phys.99,123702(2006).
*H.Jiang,T.Egawa,M.Hao,andY.Liu,“ReductionofthreadingdislocationsinAlGaNlayersgrownonAlN/sapphiretemplatesusinghigh-temperatureGaNinterlayer”,Appl.Phys.Lett.87,241911(2005).