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清华大学机械工程系导师教师师资介绍简介-程 嘉

本站小编 Free考研考试/2020-04-15

程 嘉
技术职务:副研究员
办公电话: **
通讯地址:清华大学李兆基科技大楼A1025室
电子邮件:chengjia@tsinghua.edu.cn





教育背景
工作履历
教学工作
科研工作
论文与专利
奖励与荣誉
学术兼职
学术成果

2002/09-2008/07,清华大学,工学博士

1998/09-2002/07,清华大学,工学学士


2016/06-至今, 清华大学机械工程系,副研究员
2016/12-2018/01,佐治亚理工学院材料科学与工程系,访问
2013/12-2016/05,清华大学机械工程系,副教授
2010/08-2012/12,清华大学精密仪器与机械学系,助理研究员
2008/08-2010/08, 清华大学精密仪器与机械学系,博士后


本科生课程:机械原理、机械设计、机械基础实践


研究领域:
IC装备多场耦合仿真,摩擦电微等离子体,生物医学工程


发表论文(部分)
1. Liu F, Liu Y, Lu YJ, Wang ZZ, Shi YX, Ji LH*, Cheng J* "Electrical analysis of triboelectric nanogenerator for high voltage applications exampled by DBD microplasma." Nano Energy, 2019; 56: 482-493.(IF=13.12)
2. Wang KS, Lu YJ, Cheng J*, Ji LH, Prediction of residual clamping force for Coulomb type and Johnsen–Rahbek type of bipolar electrostatic chucks. Proceedings of the Institution of Mechanical Engineers, Part C: Journal of Mechanical Engineering Science, 2019; 233: 302-312.
3. Cheng J, Ding WB, Zi YL, et al., "Triboelectric microplasma powered by mechanical stimuli," Nature Communications, 2018; 9: 3733.(IF=12.353)
4. Wang KS, Cheng J, et al., A novel measuring method of clamping force for electrostatic chuck in semiconductor devices. Journal of Semiconductors, 2016. 37(4).
5. Wang KS, Cheng J*, et al., Determination of electrostatic force and its characteristics based on phase difference by amplitude modulation atomic force microscopy. Nanoscale Research Letters, 2016. 11.
6. Lu YJ, Ji LH, and Cheng J*, Simulation of Dual-Electrode Capacitively Coupled Plasma Discharges. Plasma Science & Technology, 2016. 18(12): p. 1175-1180.
7. Cao ML, Lu YJ, Cheng J*, Ji LH. Electron heating enhancement due to plasma series resonance in a capacitively coupled RF discharge: Electrical modeling and comparison to experimental measurements. Japanese Journal of Applied Physics 2016; 55.
8. Lin J, Hou YM, Cheng J, et al., Interactive Construction of Product Digital Model: The Recursive FBS Design Method and System Prototype. 2015 Advanced Design Concepts and Practice (Adcp 2015), 2016: p. 172-180.
9. Sun Y, Cheng J, Lu Y, Ji L, Wang C. Investigation on thermal contact resistance of Si-wafer and electrostatic chuck. Chinese Journal of Vacuum Science and Technology 2016; 36(1). (in Chinese)
10. Wang C, Cheng J, Lu Y, Ji L. Effect of showerhead hole structure on flow-field in large sized chemical vapor deposition reactor. Chinese Journal of Vacuum Science and Technology 2015; 35(11). (in Chinese)
11. Wang C, Cheng J, Ji L, Lu Y, Sun Y, Lin J. 2-D DSMC algorithm based on Delaunay triangles.Qinghua Daxue Xuebao/Journal of Tsinghua University 2015;55:1079-86,97. (in Chinese)
12. Sun Y, Cheng J, Lu Y, Hou Y, Ji L. Design space of electrostatic chuck in etching chamber. Journal of Semiconductors 2015;36.
13. Sun Y, Cheng J, Lu Y, Hou Y, Ji L. Factors influcing rarefied gas heat transfer between a wafer and an electrostatic chuck. Qinghua Daxue Xuebao/Journal of Tsinghua University 2015;55:756-60.
14. Wang XK, Cheng J, Wang KS, Yang YY, Sun YC, Cao ML, et al. Modeling of electrostatic chuck and simulation of electrostatic force. 2013 International Conference on Sensors, Mechatronics and Automation, ICSMA 2013, December 24, 2013 - December 25, 2013. Shenzhen, China: Trans Tech Publications; 2014. p. 588-94.
15. Wang X, Cheng J, Wang K, Yang Y, Sun Y, Cao M, et al. Finite element analysis on factors influencing the clamping force in an electrostatic chuck. Journal of Semiconductors 2014;35.
16. Cao ML, Cheng J, Han CK, Ji LH. The current status of development and applications of wave-heated discharge plasma sources. 4th International Conference on Advanced Engineering Materials and Technology, AEMT 2014, June 14, 2014 - June 15, 2014. Xiamen, China: Trans Tech Publications Ltd; 2014. p. 193-9.
17. Cheng J, Ji L, Wang K, Han C, Shi Y. Two-dimensional simulation of inductively coupled plasma based on COMSOL and comparison with experimental data. Journal of Semiconductors 2013;34.
18. Hao D, Cheng J, Ji L, Sun Y. Simulation of cold plasma in a chamber under high- and low-frequency voltage conditions for a capacitively coupled plasma. Journal of Semiconductors 2012;33.
19. Cheng J, Zhu Y, Ji L. Modeling approach and analysis of the structural parameters of an inductively coupled plasma etcher based on a regression orthogonal design. Plasma Science and Technology 2012;14:1059-68.
20. Cheng J, Ji L, Zhu Y, Shi Y. Fluid model of inductively coupled plasma etcher based on COMSOL. Journal of Semiconductors 2010;31.
21. Cheng J, Ji L, Zhu Y. Two-dimensional model and experimental comparison of an inductively coupled plasma. Qinghua Daxue Xuebao/Journal of Tsinghua University 2010;50:250-3. (in Chinese)
22. Cheng J, Zhu Y, Duan G, Wang C. Analysis of processing chamber flow field characteristics for an ICP etcher based on regression orthogonal design. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2008;29:780-784. (in Chinese)
23. Cheng J, Zhu Y, Wang J. Two-dimensional discharge simulation of inductively coupled plasma etcher. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007;28:989-994. (in Chinese)
24. Cheng J, Zhu Y, Duan G, Chen Y. Three-dimensional discharge simulation of inductively coupled plasma etcher. International Conference on Integration and Commercialization of Micro and Nanosystems 2007, January 10, 2007 - January 13, 2007. Sanya, Hainan, China: American Society of Mechanical Engineers; 2007. p. 795-800.
25. Cheng J, Zhu Y. Influence of configurations of chamber and coil on uniformity of plasma distribution for inductively coupled plasma etcher. International Technology and Innovation Conference 2006, ITIC 2006, November 6, 2006 - November 7, 2006. 524 ed. Hangzhou, China: Institution of Engineering and Technology; 2006. p. 1113-7.


申请专利与授权(部分)
发明专利:
1. 程嘉,曹自立,季林红,吴晓晶,路益嘉,张可,周竞辉. 热功率密度径向分布可调的电磁感应加热装置. 申请号:ZL8.8,授权公告日2016.05.11.
2. 程嘉,林嘉,季林红,方永聪,郑锋,苏灿. 一种手动便携抬升装置. 专利号:ZL1.7,授权公告日2016.04.20.
3. 程嘉,王珂晟,张俊斌,王建冲,钟音,路益嘉,季林红. 静电卡盘静电力的检测系统及检测方法. 专利号:ZL7.1,授权公告日2017.09.22.
4. 程嘉,曹明路,季林红. 测量静电卡盘的静电力的装置.专利号:ZL1.0,授权公告日2015.10.28.
5. 程嘉,王人成,季林红,刘伟峰,王春财,林嘉,孙钰淳,郝道欣. 用于内部稀薄气流模拟验证及压力检测的变结构真空腔室.专利号:ZL4.8,授权公告日2014.07.23.
软件著作权
1. 程嘉,刘帆,张翼鹤,霍恒宁.大鼠减重康复训练平台控制软件.登记号:2017SR734984
2. 程嘉,夏曾华,陈代伟.机构运动设计软件.登记号:2016SR179283
3. 程嘉,王春财,路益嘉,季林红.二维非结构网格直接模拟Monte Carlo并行计算软件. 登记号:2015SR121192.


国家科学技术进步奖二等奖(100nm高密度等离子刻蚀机研发与产业化),2009年
清华大学“第六届青年教师教学大赛”理工组一等奖,2014年
清华大学青年教师教学优秀奖(10人/年),2015年


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