许军,男,研究员,清华大学微电子学研究所所长。1963年6月生于安徽合肥,1986年毕业于清华大学无线电电子学系半导体器件与物理专业,获工学学士学位,后分别于1989年和1994年在航天工业部771研究所计算机器件与设备专业获工学硕士学位和工学博士学位,1994年至1996年在清华大学微电子学研究所电子学与通信博士后科研流动站从事超大规模集成电路工艺技术的基础研究工作,1997年在清华大学微电子学研究所晋升为副研究员,1997至1999年在美国新奥尔良大学先进材料研究所固体器件研究组做访问学者,1999年回国后继续在清华大学微电子学研究所集成电路开发与工业性试验线工作,2002年晋升为研究员。
"DesignofRTD-BasedTSRAM,"ChineseJournalofSemiconductor,Vol.25,No.2,pp.138-142,Feb.,2004.
"PossibilityofCombinedUseofNeuron-MOSandRTDinMulti-ValuedLogicCircuits,"IEEEASICON'2003,Beijing,2003.
"High-PerformanceSOIDTMOSUsingaRetrogradeBasewithaLowImpuritySurfaceChannel,"Proc.2001Int’lSemicon.DeviceResearchSymp.(ISDRS’01),pp.613-616,Washington,DC,Dec.5-7,2001.
"Designoptimizationofhighperformancelowtemperature0.18umMOSFETswithlow-impurity-densitychannelsatsupplyvoltagebelow1volt,"IEEETrans.Elect.Dev.,Vol.47,No.4,pp.813-821,Apr.,2000.
"AdynamicthresholdvoltageSOIMOSFETwithasteppedchanneldopingprofile,"ICCDCS'2000,Mar.15-17,2000,Cancun,Mexico,D29-1~5.
"AnImprovedDynamicThresholdStructureforDeep-SubmicrometerSOIatExtremelyLowSupplyVoltage,"The24thAnnualEDS/CASActivitiesinWesternNewYorkConference,Rochester,NY,Nov.1st,2000.
"InvestigationofDynamicThresholdVoltageSOIMOSFET’swithLow-Impurity-DensityChannels,"Proc.1999Int’lSemicon.DeviceResearchSymp.(ISDRS’99),pp.93-96,Charlottesville,Virginia,Dec.1-3,1999.
"Designoptimizationoflow-temperatureandlow-voltagedeep-submicronMOSFETsusingstepped-channel-dopingprofiles,"IEDMS'98,AP-9-P171~174,Dec.21-23,1998.
"Optimizationofdeep-submicrometertemperaturescalableMOSFETsbasedontwo-dimensionalnumericalsimulation,"J.Phys.IVFrance,Vol.8,1998,Pr3-29~32.
"Numericalstudiesoflarge-signalpowercharacteristicsofAlGaAs/GaAsHBTs,"MicroelectronicsJournal,Vol.26,No.6,pp.525-533,1995.
"InvestigationoftheuniformityofOhmiccontacttoN-typeGaAsformedbyrapidthermalprocess,"Solid-StateElectronics,Vol.36,No.2,pp.295-296,1993.
"InfluenceofvelocityovershooteffectonhighfrequencyperformanceofAlGaAs/GaAsHBTs,"ProceedingofICSICT'92,Beijing,pp.509-511,1992
