研究员
金鹏

金鹏，理学博士，研究员，博士生导师。1992年至1996年在南开大学物理系凝聚态物理专业学习，获理学学士学位。1996年至2001年在南开大学物理学院硕博连读，师从潘士宏教授，开展半导体光电子学性质的研究，获理学博士学位。2001年至2003年在中国科学院半导体研究所半导体材料科学重点实验室进行博士后研究工作，合作导师王占国院士，从事半导体低维结构的材料生长、性质及器件的研究工作。出站后留所工作。已先后承担国家“973”计划项目、国家重大科研装备研制项目、国家自然科学基金项目等多项。在宽增益谱量子点材料与器件方面做出了出色的工作，研制的量子点超辐射发光管和可调谐外腔量子点激光器的性能指标处于国际前列。已在国内外学术期刊上发表论文70余篇（包括合著），申请和获得授权国家发明专利多项（包括合作申请）。目前的研究兴趣包括低维结构半导体材料与器件、宽禁带半导体材料、光谱技术与光谱仪器等。欢迎凝聚态物理、物理学、应用物理学、材料物理与化学、半导体材料、微电子学与固体电子学、半导体光电子学、光学、光学工程等相关专业和方向的学子报考本人的硕士和博士研究生。联系电话：010-82304563、82304068，Email：pengjin@semi.ac.cn。近期的部分论著[1]金鹏，王元立，朱洪亮，梁松，刘峰奇，“第五章III-V族化合物半导体材料”，《半导体材料研究进展》第一卷，pp.235-310，王占国、郑有炓编著，高等教育出版社，2012年1月，北京。[2]XinkunLi,PengJin,QiAn,ZuocaiWang,XueqinLv,HengWei,JianWu,JuWu,ZhanguoWang,“Experimentalinvestigationofwavelength-selectiveopticalfeedbackforahigh-powerquantumdotsuperluminescentdevicewithtwo-sectionstructure”,OpticsExpress20(11),11936-11943(2012).[3]XinkunLi,PengJin,QiAn,ZuocaiWang,XueqinLv,HengWei,JianWu,JuWu,ZhanguoWang,“Improvedcontinuous-waveperformanceoftwo-sectionquantum-dotsuperluminescentdiodesbyusingepi-side-downmountingprocess”,IEEEPhotonicsTechnologyLetters24(14),1188-1190(2012).[4]QiAn,PengJin,ZuocaiWang,XinkunLi,andZhanguoWang,“TheEffectofDouble-passgainontheperformancesofaquantum-dotsuperluminescentdiodeintegratedwithasemiconductoropticalamplifier”,JournalofLightwaveTechnology30(16),2684-2688(2012).[5]QiAn,PengJin,JuWuandZhanguoWang,“Opticallossinbent-waveguidesuperluminescentdiodes”,SemiconductorScienceandTechnology27(5),055003(2012).[6]XinkunLi,PengJin,QiAn,ZuocaiWang,XueqinLv,HengWei,JianWu,JuWu,ZhanguoWang,“Ahigh-performancequantum-dotsuperluminescentdiodewithtwo-sectionstructure”,NanoscaleResearchLetters6,625(2011).[7]LiXin-Kun,LiangDe-Chun,JinPeng,AnQi,WeiHeng,WuJian,andWangZhan-Guo,“InAs/GaAssubmonolayerquantumdotsuperluminescentdiodeemittingaround970nm”,ChinesePhysicsB21(2),028102(2012).[8]Z.C.Wang,P.Jin,X.Q.Lv,X.K.LiandZ.G.Wang,“Highpowerquantumdotsuperluminescentdiodewithanintegratedopticalamplifiersection”,ElectronicsLetters47(21)1191-1193(2011).[9]WuJian,LüXue-Qin,JinPeng,MengXian-Quan,andWangZhan-Guo,“Broadbandtunableexternalcavitylaserwithabent-waveguidequantum-dotsuperluminescentdiodegaindevice”,ChinesePhysicsB20(6),064202(2011).[10]LiangDe-Chun,AnQi,JinPeng,LiXin-Kun,WeiHeng,WuJu,andWangZhan-Guo,“Short-wavelengthInAlGaAs/AlGaAsquantumdotsuperluminescentdiodes”,ChinesePhysicsB20(10),108503(2011).[11]QiAn,JiandongLin,PengJinandZhanguoWang,“Theoreticalinvestigationofasurface-emittingsuperluminescentdiodewithacirculargrating”,SemiconductorScienceandTechnology26(8),085036(2011).[12]X.Q.Lv,P.Jin,W.Y.Wang,andZ.G.Wang,“Broadbandexternalcavitytunablequantumdotlaserswithlowinjectioncurrentdensity”,OpticsExpress18(9),8916-8922(2010).[13]LüXue-Qin,JinPeng,andWangZhan-Guo,“AbroadbandexternalcavitytunableInAs/GaAsquantumdotlaseronlybyutilizingthegroundstateemission”,ChinesePhysicsB19(1),018104(2010).[14]X.Q.Lv,P.Jin,andZ.G.Wang,“Broadlytunablegrating-coupledexternalcavitylaserwithquantumdotactiveregion”,IEEEPhotonicsTechnologyLetters22(24),1799-1801(2010).[15]X.Q.Meng,P.Jin,Z.M.Liang,F.Q.Liu,Z.G.Wang,andZ.Y.Zhang,“StructureandpropertiesofInAs/AlAsquantumdotsforbroadbandemission”,JournalofAppliedPhysics108(10),103515(2010).[16]LiangZhi-Mei,JinCan,JinPeng,WuJu,WangZhan-Guo,“TemperatureinsensitivityofopticalpropertiesofInAs/GaAsquantumdotsduetoapregrownInGaAsquantumwell”,Chin.Phys.Lett.26(01),017802(2009).[17]X.Q.Lv,N.Liu,P.Jin,andZ.G.Wang,“BroadbandemittingsuperluminescentdiodeswithInAsquantumdotsinAlGaAsmatrix”,IEEEPhotonicsTechnologyLetters20(20),1742-1744(2008).[18]Z.Y.Zhang,R.A.Hogg,P.Jin,T.L.Choi,B.Xu,andZ.G.Wang,“High-powerquantum-dotsuperluminescentLEDwithbroadbanddrivecurrentinsensitiveemissionspectrausingataperedactiveregion”,IEEEPhotonicsTechnologyLetters20(10),782-784(2008).[19]J.Wu,P.Jin,Y.H.Jiao,X.J.Lv,andZ.G.Wang,“EvolutionofInAs/GaAs(001)islandsduringthetwo-tothree-dimensionalgrowthmodetransitioninmolecular-beamepitaxy”,Nanotechnology18,165301(2007).[20]J.Wu,Y.H.Jiao,P.Jin,X.J.Lv,andZ.G.Wang,“Effectofthegrowthmodeonthetwo-tothree-dimensionaltransitionofInAsgrownonvicinalGaAs(001)substrates”,Nanotechnology18,265304(2007).[21]X.Q.Meng,Z.Q.Chen,P.Jin,Z.G.Wang,andL.Wei,“Defectsaroundself-organizedInAsquantumdotsmeasuredbyslowpositronbeam”,AppliedPhysicsLetters91(9),093510(2007).