研究员
杨晓红

杨晓红，硕士生导师。1995和1998年分别在西安交通大学物理系获得理学学士和硕士学位。2001年在半导体所获得博士学位，对有机聚合物波导及高速电光调制器进行了深入的研究。2001.9～2003.8在中科院半导体所集成光电子学国家重点实验室做博士后工作，2003.9后至今在集成光电子学国家重点实验室工作，任副研究员。期间于2009~2010在剑桥大学卡文迪许实验室学术访问6个月。曾作为主持人或科研骨干完成垂直光学腔结构的激光器、调制器、探测器，长波长GaInNAs光电子器件，具有透镜结构的远距离短脉冲光探测组件和新型量子线场效应高增益探测器等多项课题，对器件光学结构、载流子输运以及光电测试方面有深入研究。目前主要专注于高频高灵敏度高增益等极端新结构新材料探测器和器件物理的研究。

电话：010-82304343E-mail:xhyang@semi.ac.cn

主要文章
1.XiaohongYang,XiulaiXu,XiupingWang,HaiqiaoNi,QinHan,ZhichuanNiuandDavidAWilliams“Opticallycontrolledquantumdotgatedtransistorswithhighon/offratio”Appl.Phys.Lett.Vol.96,083503,2010
2.XiaohongYang,XiulaiXu,XiupingWang,HaiqiaoNi,QinHan,DavidAWilliamsandZhichuanNiu,“OpticallycontrolledQDsgatedQWR-FET:apromisingwayforsinglephotondiscrimination”InternationalNano-OptoelectronicsWorkshop147,2011.
3.S.Q.LiuQ.HanB.Zhu,X.H.Yang,H.Q.Ni,J.F.He,X.Wang,M.F.Li,Y.Zhu,J.Wang,X.P.Wang,andZ.C.Ni“High-performancemetamorphicInGaAsresonantcavityenhancedphotodetectorgrownonGaAssubstrate”Appl.Phys.Lett.Vol.98,201104(2011)
4.ZHUBin,HANQin,YANGXiao-Hong,NIHai-Qiao,HEJi-Fang,NIUZhi-Chuan,WANGXin,WANGXiu-Ping,WANGJie,“MetamorphicInGaAsp-i-nPhotodetectorswith1.75umCut-OffWavelengthGrownonGaAs”Chin.Phys.Lett.Vol.27,No.3，pp：038504(2010)
5.YangXiaohong,HanQin,NiHaiqiao，HuangShesong,DuYun,PengHongling，XiongYonghua,NiuZhichuan,WuRonghan“Designandfabricationof1.06μmresonant-cavityenhancedreflectivemodulatorwithGaInAs/GaAsQuantum-wells”，CHIN.PHYS.LETT.,Vol.23(12),3376-3379.2006.
6.Q.Han,Z.C.Niu,L.H.Peng,H.Q.Ni,X.H.Yang,Y.Du,H.Zhao,R.H.Wu,andQ.M.Wang,“High-performance1.55mmlow-temperature-grownGaAsresonant-cavity-enhancedphotodetecto”APPL.PHYS.LETT.89,131104-131104-3,2006。
7.Q.Han,X.H.Yang,Z.C.Niu,H.Q.Ni,Y.Q.Xu,S.Y.Zhang,Y.Du,L.H.Peng,H.Zhao,C.Z.Tong,R.H.WuandQ.M.Wang,“1.55μmGaInNAsresonant-cavity-enhancedphotodetectorgrownonGaAs”Appl.Phys.Lett.,87,111105-111107,2005.
8.Zhouzhen,Hanqin,Duyun,YangXiaohong,WuRonghan,HuangYongqing,andRenXiaomin,“AGaAs-basedMOEMSTunableRCEPhotodetectorwithSingleCantiliverBeam”,CHINESEJOURNALOFSEMICONDUCTORS,Vol26(6),2005
9.Z.C.Niu,Q.Han,H.Q.Ni,X.H.Yang,Y.Q.Xu,Y.Du,S.Y.Zhang,L.H.Peng,H.Zhao,D.H.Wu,S.Y.Li,Z.H.He,Z.W.RenR.H.Wu,“MaterialgrowthanddevicefabricationofGaAsbased1.3umGaInNAsquantumwelllaserdiodes”,Chin.J.Semiconductors,26,1860(2005).
10.Z.C.Niu,S.Y.Zhang,H.Q.Ni,D.H.Wu,H.Zhao,L.H.Peng,Y.Q.Xu,S.Y.Li,Z.H.He,Z.W.Ren,Q.Han,X.H.Yang,Y.Du,R.H.Wu,“GaAsbasedroomtemperaturecontinuous-wave1.59umGaInNAsSbsingle-quantum-welllaserdiodegrownbymolecular-beamepitaxy”,Appl.Phys.Lett.,Vol.87,231121(2005).
11.WUDong-Hai,NIUZhi-Chuan,ZHANGShi-Yong,NIHai-Qiao,HEZhen-Hong,ZHAOHuan,PENGHong-Ling,YANGXiao-Hong,HANQin,WURong-Han，“InfluenceofGrowthParametersofFrequency-RadioPlasmaNitrogenSourceonExtendingEmissionWavelengthsfrom1.31μmto1.55μmGaInNAs/GaAsQuantumWellsGrownbyMolecular-BeamEpitaxy”ChinesePhysicsLetters，vol.23(4)1005-1008(2006)
12.LiangKun,YangXiaohong,DuYun,etal.“TheIncidentAngleDependenceofQuantumEfficiencyofGaAsBasedRCEPhotodetectors”,光子学报（英文）,Vol32(5)2003,p637.
13.ZhangRuikang,YangXiaohong,zhouzhenetal.“MicromechanicalTunableOpticalFilter”,ChineseJournalofSemiconductorsVol.24(4),2003,p347.
14.LiangKun,YangXiaohong,WuRonghan,etal.“RCEPhotodiodesatWavelengthBandof1.06mm”,中国光学快报（英文）,Vol.1(6),2003,p323.
15.K.Liang，X.H.Yang,Y.Du,etal.“AnalysisfortheAngleDependenceofGaAsBasedRCEPhotodectors”,Proc.-SPIE,4905,2002,Shanghai(ISTPIDSNo:BV45A)
16.YangXiaohong,DuYun,WuRonghan,etal“RidgeWaveguideElectro-OpticPolymerModulatorwithaNewKindofCoronaPoledCrosslinkablePolyurethane”,ChineseJournalofSemiconductors2001,vol.22,p130
17.YangXiaohong,DuYun,ShIZhiewn,WuRonghan，“Mach-ZehnderElectro-OpticPolymerModulatorwithCoronaPoledCorelayer”ChineseJournalofSemiconductors,2001Vol.22(8),971
18.YangXiaohong,DuYun,WuRonghan,etal,“AnInvestigationonRidgeWaveguideforElectro-OpticPolymerModulator”SPIE2000,Vol.4225,p128.（oral）