文献详情
Engineering Point-Defect States in Monolayer WSe2
文献类型：期刊
通讯作者：Zhang, CD (reprint author), Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China.; Zhang, CD; Shih, CK (reprint author), Univ Texas Austin, Dept Phys, Austin, TX 78712 USA.; Ji, W (reprint author), Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China.; Ji, W (reprint author), Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Beijing 100872, Peoples R China.
期刊名称：ACS NANO影响因子和分区
年：2019
卷：13
期：2
页码：1595-1602
ISSN：1936-0851
关键词：transition metal dichalcogenides; defect engineering; midgap defect states; local magnetic moment; spin splitting
所属部门：物理学系
摘要：Defect engineering is a key approach for tailoring the properties of the emerging two-dimensional semiconductors. Here, we report an atomic engineering of the W vacancy in monolayer WSe2 by single potassium atom decoration. The K decoration alters the energy states and reshapes the wave function such that previously hidden midgap states become visible with well-resolved multiplets in scanning tunneling spectroscopy. Their energy levels are in good agreement with first principle calculations. Mor ...More
Defect engineering is a key approach for tailoring the properties of the emerging two-dimensional semiconductors. Here, we report an atomic engineering of the W vacancy in monolayer WSe2 by single potassium atom decoration. The K decoration alters the energy states and reshapes the wave function such that previously hidden midgap states become visible with well-resolved multiplets in scanning tunneling spectroscopy. Their energy levels are in good agreement with first principle calculations. More interestingly, the calculations show that an unpaired electron donated by the K atom can lead to a local magnetic moment, exhibiting an on off switching by the odd even number of electron filling. Experimentally the Fermi level is pinned above all defect states due to the graphite substrate, corresponding to an off state. The close agreement between theory and experiment in the off state, on the other hand, suggests the possibility of gate-programmable magnetic moments at the defects. ...Hide

DOI：10.1021/acsnano.8b07595
百度学术：Engineering Point-Defect States in Monolayer WSe2
语言：外文
被引频次：5
人气指数：1
浏览次数：1
基金：National Key RAMP;D Program of China [2018FYA0305800]; National Natural Science Foundation of ChinaNational Natural Science Foundation of China [11774268, 11622437, 61674171]; US National Science FoundationNational Science Foundation (NSF) [DMR-1306878, DMR-1720595, DMR-1808751, EFMA-1542747]; Welch FoundationThe Welch Foundation [F-1672]; KAUST (Saudi Arabia)King Abdullah University of Science & Technology; Academia Sinica (Taiwan)Academia Sinica - Taiwan; Croucher Foundation (Croucher Innovation Award); RGC of HKSARHong Kong Research Grants Council [C7036-17W]; Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000]; Fundamental Research Funds for the Central Universities of ChinaFundamental Research Funds for the Central Universities; Research Funds of Renmin University of China [16XNLQ01]; Outstanding Innovative Talents Cultivation Funded Programs 2017 of Renmin University of China; [AOARD-134137]
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