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Unusual Electronic States and Superconducting Proximity Effect of Bi Films Modulated by a NbSe2 Su

本站小编 Free考研/2020-04-17

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Unusual Electronic States and Superconducting Proximity Effect of Bi Films Modulated by a NbSe2 Substrate
文献类型:期刊
通讯作者:Zhang, WH; Fu, YS (reprint author), Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Hubei, Peoples R China.; Zhang, WH; Fu, YS (reprint author), Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Hubei, Peoples R China.; Ji, W (reprint author), Renmin Univ China, Dept Phys, Beijing Key Lab Optoelect Funct Mat & Micronano D, Beijing 100872, Peoples R China.
期刊名称:ACS NANO影响因子和分区
年:2019
卷:13
期:2
页码:1885-1892
ISSN:1936-0851
关键词:few-layer bismuth (110); two-dimensional heterostructures; proximity effect; thickness dependence; covalent-like quasi-bonds; scanning tunneling microscopy; density functional theory calculations
所属部门:物理学系
摘要:Heterostructures of two-dimensional layered materials can be functionalized with exotic phenomena that are unpresented with each constituting component. The interface effect plays a key role in determining the electronic properties of the heterostructure, whose characterization requires a correlation with the morphology with atomic-scale precision. Here, we report an investigation on the electronic properties of few-layer Bi(110) films mediated by a NbSe2 substrate. By utilizing scanning tunneli ...More
Heterostructures of two-dimensional layered materials can be functionalized with exotic phenomena that are unpresented with each constituting component. The interface effect plays a key role in determining the electronic properties of the heterostructure, whose characterization requires a correlation with the morphology with atomic-scale precision. Here, we report an investigation on the electronic properties of few-layer Bi(110) films mediated by a NbSe2 substrate. By utilizing scanning tunneling microscopy and spectroscopy, we show a significant variation of the density of states at different Bi film thicknesses, resulting in an unusual superconducting proximity effect that deviates from the conventional monotonous decay behavior. Moreover, the electronic states of the Bi films are also prominently modulated by the Moire pattern spatially. With first-principles calculations, we illuminate these findings as the results of covalent-like quasi-bonds formed at the Bi/NbSe2 interface, which profoundly alter the charge distributions in the Bi films. Our study indicates a viable way of modulating the electronic properties of ultrathin films by quasi-covalent interfacial couplings beyond conventional van der Waals interactions. ...Hide

DOI:10.1021/acsnano.8b08051
百度学术:Unusual Electronic States and Superconducting Proximity Effect of Bi Films Modulated by a NbSe2 Substrate
语言:外文
被引频次:
5
基金:National Key Research and Development Program of China [2017YFA0403501, 2016YFA0401003, 2018YFA0307000]; National Science Foundation of ChinaNational Natural Science Foundation of China [11774105, 11504056, 11522431, 11474112, 11274380, 91433103, 11622437, 61674171, 61761166009]; Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000]; Fundamental Research Funds for the Central UniversitiesFundamental Research Funds for the Central Universities [2017KFXKJC009]; Research Funds of Renmin University of China [16XNLQ01]
作者其他论文



Charge-governed phase manipulation of few-layer tellurium.Wang, Cong, Zhou, Xieyu, Qiao, Jingsi, et al. .NANOSCALE. 2018, 10(47), 22263-22269.
Solution-Based Property Tuning of Black Phosphorus.Fan, Shuangqing, Shen, Wanfu, Liu, Jun, et al. .ACS APPLIED MATERIALS & INTERFACES. 2018, 10(46), 39890-39897.
Two-dimensional tessellation by molecular tiles constructed from halogen-halogen and halogen-metal networks.Cheng, Fang, Wu, Xue-Jun, Hu, Zhixin, et al. .NATURE COMMUNICATIONS. 2018, 9.
Interfacial water intercalation-induced metal-insulator transition in NbS2/BN heterostructure.Xu, Rui, Wang, Xinsheng, Zheng, Zhiyue, et al. .NANOTECHNOLOGY. 2019, 30(20).
Surface stabilized cubic phase of CsPbI3 and CsPbBr3 at room temperature.Yang, Feng, Wang, Cong, Pan, Yuhao, et al. .CHINESE PHYSICS B. 2019, 28(5).

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