文献详情
Engineering Point-Defect States in Monolayer WSe2
文献类型：期刊
期刊名称：ACS nano影响因子和分区
年：2019
卷：13
期：2
页码：1595-1602
ISSN：1936-086X
关键词：defect engineering,local magnetic moment,midgap defect states,spin splitting,transition metal dichalcogenides
所属部门：物理学系
摘要：Defect engineering is a key approach for tailoring the properties of the emerging two-dimensional semiconductors. Here, we report an atomic engineering of the W vacancy in monolayer WSe2 by single potassium atom decoration. The K decoration alters the energy states and reshapes the wave function such that previously hidden midgap states become visible with well-resolved multiplets in scanning tunneling spectroscopy. Their energy levels are in good agreement with first-principle calculations. Mor ...More
Defect engineering is a key approach for tailoring the properties of the emerging two-dimensional semiconductors. Here, we report an atomic engineering of the W vacancy in monolayer WSe2 by single potassium atom decoration. The K decoration alters the energy states and reshapes the wave function such that previously hidden midgap states become visible with well-resolved multiplets in scanning tunneling spectroscopy. Their energy levels are in good agreement with first-principle calculations. More interestingly, the calculations show that an unpaired electron donated by the K atom can lead to a local magnetic moment, exhibiting an on-off switching by the odd-even number of electron filling. Experimentally the Fermi level is pinned above all defect states due to the graphite substrate, corresponding to an off state. The close agreement between theory and experiment in the off state, on the other hand, suggests the possibility of gate-programmable magnetic moments at the defects. ...Hide

DOI：10.1021/acsnano.8b07595
百度学术：Engineering Point-Defect States in Monolayer WSe2
语言：外文
人气指数：2
浏览次数：2
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