关键词: 磁电效应/
磁电异质结/
磁电传感器/
磁电器件
English Abstract
Magnetoelectric heterostructure and device application
Yang Na-Na,Chen Xuan,
Wang Yao-Jin
1.School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
Fund Project:Project supported by the National Natural Science Foundation of China (Grant Nos. 51602156, 51790492), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20160824), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 30916011104, 30916011208).Received Date:30 April 2018
Accepted Date:01 June 2018
Published Online:05 August 2018
Abstract:The magnetoelectric (ME) heterostructure is composed of ferromagnetic and ferroelectric materials. The heterostructural ME effect originates from piezoelectric effect in the ferroelectric component and magnetostrictive effect in the ferromagnetic component. The magnetoelectric heterostructure has higher magnetoelectric coupling coefficient and lower dielectric loss than the particulate composites, and thus leading to several promising applications such as in the magnetic field sensors, the energy harvesters, antenna and memory devices. In this paper, we review the recent research progress in ME heterostructure for device applications, and present a development course of ME heterostructure. Finally, we also summarize the challenges of developing the ME heterostructure and point out its perspectives.
Keywords: magnetoelectric effect/
magnetoelectric heterostructure/
magnetic sensor/
magnetic device
