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基于施密特触发的高鲁棒性亚阈值标准单元

本站小编 Free考研考试/2022-01-03

张跃军1, 2,
韩金亮2,
张会红2,,
1.复旦大学专用集成电路与系统国家重点实验室 上海 201210
2.宁波大学信息科学与工程学院 宁波 315211
基金项目:国家自然科学基金(61871244, 61874078),专用集成电路与系统国家重点实验室开放研究课题基(2019KF002),宁波市公益性计划项目(202002N3134),宁波市自然科学基金(202003N4107)

详细信息
作者简介:张跃军:男,1982年生,副教授,研究方向为低功耗、高信息密度集成电路理论和设计、安全芯片理论和设计
韩金亮:男,1996年生,硕士生,研究方向为低功耗集成电路设计
张会红:女,1976年生,副教授,研究方向为控制理论与应用、低功耗集成电路理论与优化设计
通讯作者:张会红 zhanghuihong@nbu.edu.cn
中图分类号:TN492

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被引次数:0
出版历程

收稿日期:2021-01-04
修回日期:2021-04-17
网络出版日期:2021-04-30
刊出日期:2021-06-18

High-Robust Sub-threshold Standard Cells Using Schmitt Trigger

Yuejun ZHANG1, 2,
Jinliang HAN2,
Huihong ZHANG2,,
1. State Key Laboratory of Application Specific Integrated Circuits and Systems, Shanghai 201210, China
2. Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
Funds:The National Natural Science Foundation of China (61871244, 61874078), The Open Research Project Fund of the State Key Laboratory of AISC and Systems (2019KF002), The S&T Plan of Ningbo Science and Technology Department (202002N3134), The Ningbo Natural Science Foundation (202003N4107)


摘要
摘要:亚阈值电路是低功耗重要发展方向之一。随着电源电压降低,晶圆代工厂提供的标准单元电路性能容易受噪声和工艺偏差的影响,已经成为制约亚阈值芯片的瓶颈。该文提出一种基于施密特触发(ST)与反向窄宽度效应(INWE)的亚阈值标准单元设计方案。该方案首先利用ST的迟滞效应与反馈机制,在电路堆叠结点处添加施密特反馈管以优化逻辑门、减少漏电流、增强鲁棒性;然后,采用INWE最小宽度尺寸与分指版图设计方法,提高电路的开关阈值与MOS管的驱动电流;最后,在TSMC 65 nm工艺下构建标准单元的物理库、逻辑库和时序库,完成测试验证。实验结果表明,所设计的亚阈值标准单元与文献相比,功耗降低7.2%~15.6%,噪声容限提升11.5%~15.3%,ISCAS测试电路的平均功耗降低15.8%。
关键词:标准单元/
低功耗/
亚阈值/
施密特触发特性
Abstract:Sub-threshold circuit is an important development direction of low power consumption. With the reduction of power supply voltage, the performance of standard cell circuits provided by foundries is susceptible to noise and process deviations, which has become a bottleneck restricting sub-threshold chips. The high-robust sub-threshold standard cells are proposed in this work. The Schmitt Trigger (ST) and Inverse Narrow Width Effect (INWE) are used to improve the performance, leakage, robust of the logic gates. Then, the INWE minimum width size and finger layout methods are used to increase the switching threshold of the circuit and the drive current of transistor. Finally, the standard cell library is designed and verified with TSMC 65 nm process. The experimental results show that the power of designed standard cells is reduced about 7.2%~15.6%, the noise margin is improved about 11.5%~15.3%, and the average power of ISCAS test circuit is reduced about 15.8%.
Key words:Standard cell/
Low power/
Sub-threshold/
Schmitt Trigger (ST)



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