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低阻硅TSV与铜TSV的热力学变参分析

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低阻硅TSV与铜TSV的热力学变参分析
Impact of Dimensions on Thermal-Mechanical Reliability of Low Resistivity Silicon-TSVs and Copper TSVs
投稿时间：2017-06-09
DOI：10.15918/j.tbit1001-0645.2018.11.012
中文关键词:三维集成硅通孔热力学特性有限元分析
English Keywords:3D-integrationthrough silicon viathermal mechanical characteristicsfinite element analysis
基金项目:国家自然科学基金资助项目（61574016，61774015）
作者单位
陈志铭北京理工大学 信息与电子学院, 北京 100081
谢奕北京理工大学 信息与电子学院, 北京 100081
王士伟北京理工大学 光电学院, 北京 100081
于思齐北京理工大学 信息与电子学院, 北京 100081
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中文摘要:
硅通孔（through-silicon-via，TSV）是三维集成技术中的关键器件.本文对低阻硅TSV与铜TSV的热力学特性随各项参数的变化进行了比较.基于基准尺寸，比较了低阻硅TSV和铜TSV在350℃的工作温度下，最大von Mises应力和最大凸起高度之间的不同.基于这两种结构，分别对TSV的直径、高度、间距进行了变参分析，比较了不同参数下，两种TSV的热力学特性.结果表明，低阻硅TSV具有更好的热力学特性.
English Summary:
Through-silicon-vias (TSVs) has been identified as one of the most significant devices in 3D-integration. This paper addresses the comparative studies of two types of TSVs, i.e. copper-based TSVs (Cu-TSV) and low resistivity silicon pillar based TSVs (LRS-TSV), focusing on impact of geometric dimensions on their thermal-mechanical reliabilities. During the studies, finite element analysis (FEA) were utilized. First, based on the experimental dimension of the two kinds of TSV, the maximal protrusion height and thermal stress were simulated and compared under 350℃. Second, by changing the factors of experimental model such as TSV diameter, height and pitch, the difference of their thermal mechanical characteristics was investigated and compared. The results show that the LRS-TSV performs better in terms of thermal mechanical properties.
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