龙世兵
单位：中国科学技术大学微电子学院
地址：安徽省合肥市黄山路4号中国科学技术大学北区融合楼209室
邮编：230027
电话：
个人主页： http://sme.ustc.edu.cn/2018/1215/c17411a365660/page.htm
实验室介绍： sme.ustc.edu.cn


个人简历 Personal resume


龙世兵，博士，教授，中国科学技术大学微电子学院执行院长，从事超宽禁带半导体器件、存储器等领域的研究。IEEE高级会员，中国电子学会青年科学家俱乐部会员，第三代半导体青年创新促进委员会会员，全国半导体设备与材料标准化技术委员会微光刻工作组委员，IEEE EDL/TED、Adv. Mater.等多种国际著名学术期刊的审稿人，InfMat期刊青年编委。主持国家自然科学基金、科技部（863、973、重大专项、重点研发计划）、中科院等资助科研项目20余项。2013年获得国家自然科学基金优秀青年科学基金项目资助，2017年作为负责人获得中科院创新交叉团队项目资助，2019年获得国家****科学基金项目资助。在IEEE EDL等国际学术期刊和会议上发表论文100余篇，SCI他引5500余次，H因子43，5篇论文入选ESI高引论文（累计引用居前1%的论文）。获得/申请专利100余项，其中9项转移给国内最大的集成电路制造企业中芯国际，74项授权/受理发明专利许可给武汉新芯。获得2013年国家技术发明奖二等奖（排名6/6）、2016年国家自然科学二等奖（排名4/5）。


研究方向 Research direction


1、宽禁带半导体器件
2、功率电子器件/光电探测器
3、DRAM存储器/阻变存储器



招生信息 Enrollment information


欢迎具有微电子、电子、物理、材料物理等专业背景的硕士/博士研究生和大三/大四本科生加入研究团队，提供良好的材料/器件/电路加工和测试表征等实验研究，提供舒适的办公条件及高于基本要求的生活补贴。


论文专著 The monograph


1)Schottky Barrier Rectifier Based on (100) β-Ga2O3 and its DC and AC Characteristics - IEEE Electron Device Letters - - 2018, 39(4), 556-559
2)Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties - AIP Advances - - 2018, 8, 015316
3)Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics - Applied Physics Letters - - 2017, 110, 093503
4)Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two-dimensional layered materials - Small - - 2017, 13(35) **
5)Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator - Scientific Reports - 7, 112 - 2017, 7, 11204
6)A cell-based clustering model for the reset statistics in RRAM - Applied Physics Letters - - 2017, 110, 123503
7)Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO2-based memristor - Applied Physics Letters - - 2017, 111, 213505
8)Highly scalable resistive switching memory in metal nanowire crossbar arrays fabricated by electron beam lithography - Journal of Vacuum Science & Technology B - - 2016, 34(2), 02G105
9)A physical model for the statistics of the set switching time of resistive RAM measured with the width-adjusting pulse operation method - IEEE Electron Device Letters - - 2015, 36(12), 1303-1306
10) Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation - Applied Physics Letters - - 2015, 106(9), 092103
11)Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure - Applied Physics Letters - - 2014, 105(19), 193501
12)Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO2-Based RRAM - Scientific Reports - - 2013, 3, 2929
13)Quantum-size effects in hafnium-oxide resistive switching - Applied Physics Letters - - 2013, 102, 183505
14)Cycle-to-cycle intrinsic RESET statistics in HfO2-based unipolar RRAM devices - IEEE Electron Device Letters - - 2013, 34(5), 623-625
15)A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown - IEEE Electron Device Letters - - 2013, 34(8), 999-1001
16)Reset Statistics of NiO-Based Resistive Switching Memories - IEEE Electron Device Letters - - 2011, 32(11): 1570-1572