姓名
韩传余

职称
副教授
硕士导师

邮箱
hanchuanyu@xjtu.edu.cn





1．教师简介
韩传余，2015年9月毕业于香港大学，获博士学位；2016年2月至今，任西安交通大学微电子学院讲师、副教授，硕士生导师；2017年10月至2018年10月，美国哥伦比亚大学访问****。
2． 研究领域或方向
忆阻器
薄膜晶体管
类脑计算以及仿神经元突触器件
3． 正在或曾经承担的科研项目
国家自然基金青年项目
西安交通大学科研启动项目
4． 获奖情况及科研成果
1) C.Y. Han^*, Z. X. Zhang, W. H. Liu , X. Li, L. Geng , L. Wang , and X. L. Wang^*, “Effects of CaO Interlayer on the Performance of Biodegradable Transient MgO-Based Resistive Random Access Memory”, IEEE Transactions on Electron Devices, vol. 67, pp.481-486, Feb. 2020
2) S. L. Fang , W. H. Liu, X. Li, X. L. Wang, L. Geng, M.S. Wu, X. D. Huang, and C.Y. Han^*, “Biodegradable transient resistive random access memory based on MoO3/MgO/MoO3 stack”, Applied Physics Letters, vol. 115, pp.244102, Dec 2019.
3) C. Y. Han, Y. X. Ma, W. M. Tang, X. L. Wang, and P. T. Lai, "A Study on Organic Thin-Film Transistors Using Hf-La Oxides With Different La Contents as Gate Dielectrics," IEEE Transactions on Electron Devices, vol. 65, pp. 1107-1112, Mar 2018.
4) C. Y. Han, Y. X. Ma, W. M. Tang, X. L. Wang, and P. T. Lai, "A Study on Pentacene Organic Thin-Film Transistor With Different Gate Materials on Various Substrates," IEEE Electron Device Letters, vol. 38, pp. 744-747, Jun 2017.
5) C. Y. Han, W. M. Tang, and P. T. Lai, "High-Mobility Pentacene Organic Thin-Film Transistor with LaxNb(1-x) O-y Gate Dielectric Fabricated on Vacuum Tape," IEEE Transactions on Electron Devices, vol. 64, pp. 1716-1722, Apr 2017.
6) C. Y. Han, J. Q. Song, W. M. Tang, C. H. Leung, and P. T. Lai, "High-performance organic thin-film transistor by using LaNbO as gate dielectric," Applied Physics Letters, vol. 107, Jul 2015.
7) C. Y. Han, W. M. Tang, C. H. Leung, and P. T. Lai, "Pentacene organic thin-film transistor with HfYO gate dielectric made on adhesive vacuum tape," Electronics Letters, vol. 51, Apr 2015.
8) C. Y. Han, W. M. Tang, C. H. Leung, C.-M. Che, and P. T. Lai, "A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor," IEEE Transactions on Electron Devices, vol. 62, pp. 2313-2319, Jul 2015.
9) C.-Y. Han, P. T. Lai, C. H. Leung, and C. M. Che, Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with ZrLaOx as gate dielectric, 2012.
10) C. Y. Han, W. M. Tang, C. H. Leung, C. M. Che, and P. T. Lai, "High-mobility pentacene thin-film transistor by using LaxTa(1-x)Oy as gate dielectric," Organic Electronics, vol. 15, pp. 2499-2504, Oct 2014.
11) C. Y. Han, W. M. Tang, C. H. Leung, C. M. Che, and P. T. Lai, "High-mobility pentacene OTFT with TaLaO gate dielectric passivated by fluorine plasma," Physica Status Solidi-Rapid Research Letters, vol. 8, pp. 866-870, Oct 2014.
12) C. Y. Han, W. M. Tang, C. H. Leung, C. M. Che, and P. T. Lai, "High-Performance Pentacene Thin-Film Transistor With High-kappa HfLaON as Gate Dielectric," IEEE Electron Device Letters, vol. 34, pp. 1397-1399, Nov 2013.
13) C. Y. Han, L. X. Qian, C. H. Leung, C. M. Che, and P. T. Lai, "A low-frequency noise model with carrier generation-recombination process for pentacene organic thin-film transistor," Journal of Applied Physics, vol. 114, Jul 2013.
14) C. Y. Han, L. X. Qian, C. H. Leung, C. M. Che, and P. T. Lai, "High-performance pentacene thin-film transistor with ZrLaO gate dielectric passivated by fluorine incorporation," Organic Electronics, vol. 14, pp. 2973-2979, Nov 2013.
15) C. Y. Han, C. H. Leung, P. T. Lai, W. M. Tang, C. M. Che, and Ieee, Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HITiO as gate dielectric, 2013.
16) C. Y. Han, C. H. Leung, P. T. Lai, W. M. Tang, and C. M. Che, Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric, 2013.
17) L. Chen, C. Gong, G. Zhang, C. Han, X. Li, W. Liu, et al., Graphene synaptic transistor based on Ion-Gel dielectric, 2019.
18) L. G. Beka, X. Li, X. Wang, C. Han, and W. Liu, "Reduced graphene oxide/CoS2 porous nanoparticle hybrid electrode material for supercapacitor application," Rsc Advances, vol. 9, pp. 26637-26645, Aug 27 2019.
19) J. Song, C. Han, and P. T. Lai, "Comparative Study of Nb2O5, NbLaO, and La2O3 as Gate Dielectric of InGaZnO Thin-Film Transistor," IEEE Transactions on Electron Devices, vol. 63, pp. 1928-1933, May 2016.
20) L. X. Qian, X. Z. Liu, C. Y. Han, and P. T. Lai, "Improved Performance of Amorphous InGaZnO Thin-Film Transistor With Ta2O5 Gate Dielectric by Using La Incorporation," IEEE Transactions on Device and Materials Reliability, vol. 14, pp. 1056-1060, Dec 2014.
21) Y.-X. Ma, C.-Y. Han, and P. T. Lai, Carrier-Mobility Improvement for Pentacene OTFT with LaZrO Dielectric by using Pd Gate, 2016.
22) Y. X. Ma, C. Y. Han, W. M. Tang, and P. T. Lai, "Effects of Gate Electron Concentration on the Performance of Pentacene Organic Thin-Film Transistors," Ieee Electron Device Letters, vol. 39, pp. 963-966, Jul 2018.
23) Y. X. Ma, C. Y. Han, W. M. Tang, and P. T. Lai, "High-performance pentacene OTFT by incorporating Ti in LaON gate dielectric," Applied Physics Letters, vol. 111, Jul 2017.
24) Y. Ma, W. M. Tang, C. Han, and P. T. Lai, "High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb," Physica Status Solidi a-Applications and Materials Science, vol. 215, Mar 2018.
25) B. Li, C. Y. Han, P. T. Lai, and W. M. Tang, "Effects of source/drain-electrode material, thickness and fabrication method on the electrical performance of pentacene thin-film transistor," Thin Solid Films, vol. 667, pp. 28-33, Dec 2018.