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教授博士生导师硕士生导师性别:男
毕业院校:山东大学
学历:博士研究生毕业
学位:博士
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济宁金乡人,2009年获山东大学本科学位,2014年获山东大学博士学位。研究方向为二维半导体与器件模拟。读博期间,获山东大学校长奖学金两次、山东省研究生优秀科技创新成果奖一等奖两次,并获第八届中国青少年科技创新奖。博士毕业之后,分别在德国雅各布大学和莱比锡大学从事博士后研究。期间作为co-organizer组织了2016年在德国不莱梅大学召开的Tailor-made 2D-materials and functional devices - CECAM国际学术会议。2017年9月获聘山东大学齐鲁青年学者。近年来,累计发表IF>10的SCI论文17篇,10>IF>6的40篇,SCI总被引3870余次,7篇论文入选ESI高被引论文,H指数为29。其中第一或通讯作者文章包括1篇J. Am. Chem. Soc.、1篇Angew. Chem. Int. Ed.、2篇Nano Lett.、2篇Materi. Horiz.、1篇ACS Nano、1篇Nano Energy。有3篇第一作者的研究论文单篇被引用超过240次。2017年9月入职山东大学以来,以第一或通讯作者身份在Materi. Horiz., Nano Lett., Nano Energy等期刊发表IF > 10的SCI论文7篇,10 > IF > 6的7篇,其中2篇入选ESI高被引论文。教育经历Education Background 工作经历Work Experience
2002.92005.6
金乡二中2009.92014.6
山东大学原子与分子物理理学博士学位2005.92009.6
山东大学应用物理学理学学士学位 2017.9至今
山东大学物理学院2014.82016.4
Jacobs University博士后2016.52017.8
Leipzig University博士后2017.9至今
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科学研究
代表性论文 科研论文(full list) 研究项目 学术会议报告 其他 其他教学研究
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教授博士生导师硕士生导师性别:男
毕业院校:山东大学
学历:博士研究生毕业
学位:博士
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所在单位:物理学院
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代表性论文
1. Peng, R., Ma, Y. D.*, Zhang, S., Kou, L. Z., Huang, B. B., Dai, Y.* (2019): Self-doped p–n junctions in two-dimensional In2X3 van der Waals materials. Materials Horiz. Accepted.
2. Zhang, T., Ma, Y. D.*, Yu, L., Huang, B. B., Dai, Y.* (2019): Direction-control of anisotropic electronic behaviors via ferroelasticity in two-dimensional α-MPI (M = Zr, Hf). Materials Horiz. Accepted.
3. Peng, R., Ma, Y. D.*, He, Z. L., Huang, B. B., Kou, L. Z., Dai, Y.* (2019): Single-layer Ag2S: A two-dimensional bi-directional auxetic semiconductor. Nano Lett. 19,1227.
4. Zhao, P., Ma, Y. D.*, Lv, X. S., Li, M. M., Huang, B. B., Dai, Y.* (2018): Two-dimensional III2-VI3 materials: Promising photocatalysts for overall water splitting under infrared light spectrum. Nano Energy 51, 533-538.
5. Ma, Y. D., Kuc, A., Heine. T.* (2017): Single-layer Tl2O: A metal-shrouded 2D semiconductor with high electronic mobility. J. Am. Chem. Soc. 139 (34), 11694–11697.
6. Ma, Y. D., Kuc, A., Jing, Y., Philipsen, P., Heine. T.* (2017): Haeckelite NbS2 two-dimensional crystal - a diamagnetic high mobility semiconductor with Nb4+ ions. Angew. Chem. Int. Ed. 56, 1- 5.
7. Ma, Y. D.*, Dai, Y., Kou, L. Z., Frauenheim, T., Heine. T.* (2015): Robust two-dimensional topological insulators in methyl-functionalized bismuth, antimony and lead bilayer films. Nano Lett. 15, 1083-1089.
8. Ma, Y. D., Dai, Y., Guo, M., Niu, C. W., Zhu, Y. T., Huang, B. B. (2012): Evidence of the existence of magnetism in pristine VX2 monolayers (X = S, Se) and their strain-induced tunable magnetic properties. ACS Nano 6, 1695-1701.
科研论文(full li...
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2020年论文
125. Yang, H. C., Ma, Y. D.*, Lv, X. S., Huang, B. B., Dai, Y.* (2020): Prediction of Intrinsic Electrocatalytic Activity for Hydrogen Evolution Reaction in Ti4X3 (X = C, N). J. Cataly. 10.1016/j.jcat.2020.04.010.
124. Liang, Y., Ma, Y. D.*, Zhao, P., Wang, H., Huang, B. B., Dai, Y.* (2020): High-temperature quantum anomalous Hall insulator in two-dimensional Bi2ON. Appl. Phys. Lett. Accepted.
123. Lei, C., Ma, Y. D.*, Zhang, T., Xu, X., Huang, B. B., Dai, Y.* (2020): Valley Polarization in Monolayer CrX2 (X= S, Se) with Magnetically Doping and Proximity Coupling. New J. Phys. Accepted.
122. Peng, R., Ma, Y. D.*, Wang, H., Huang, B. B., Dai, Y.* (2020): Stacking-dependent topological phase in bilayer MBi 2Te 4 (M = Ge, Sn,Pb). Phys. Rev. B 101, 115427.
121. He, Z. L., Ma, Y. D.*, Lei, C. A., Peng, R., Huang, B. B., Dai, Y.* (2020): Tl2O/WTe2 van der Waals Heterostructure with Tunable Multiple Band Alignments. J. Chem. Phys. 152, 074703.
120. Peng, R., Ma, Y. D.*, Zhang, S., Kou, L. Z., Huang, B. B., Dai, Y.* (2020): Self-doped p–n junctions in two-dimensional In2X3 van der Waals materials. Mater. Horiz. 7, 504-510.
119. Zhang, T.,Ma, Y. D.*, Xu, X. L., Lei, C. A., Huang, B. B., Dai, Y.* (2020): Two-Dimensional Ferroelastic Semiconductors in Nb2SiTe4 and Nb2GeTe4 with Promising Electronic Properties. J. Phys. Chem. Lett. 11, 2, 497-503.
2019年论文
118. Zhao, P.,Ma, Y. D.*, Lei, C. A., Wang, H., Huang, B. B., Dai, Y.* (2019):Single-layer LaBr2: Two-dimensional valleytronic semiconductor with spontaneous spin and valley polarizations.Appl. Phys. Lett.115, 261605.
117. Wu, Q., Ma, Y. D.*, Peng, R., Huang, B. B., Dai, Y.* (2019): Single-Layer Cu2WS4 with Promising Electrocatalytic Activity toward Hydrogen Evolution Reaction. ACS Appl. Mater. Interfaces 11, 45818-45824.
116. Dou, K. Y.,Ma, Y. D.*, Zhang, T., Huang, B. B., Dai, Y.* (2019): Prediction of Two-Dimensional PC6 as a Promising Anode Material for Potassium-Ion Battery. Phys. Chem. Chem. Phys. 21, 26212-26218.
115. Yang, H. C., Ma, Y. D.*, Liang, Y., Huang, B. B., Dai, Y.* (2019): Monolayer HfTeSe4: A promising two-dimensional photovoltaic material for solar cells with high efficiency. ACS Appl. Mater. Interfaces 11, 37901-37907.
114. Lei, C., Ma, Y. D.*, Xu, X., Zhang, T., Huang, B. B., Dai, Y.* (2019): Broken-gap type-III band alignment in WTe2/HfS2 van der Waals heterostructure. J. Phys. Chem. C 123, 23089-23095.
113. Zhang, T., Ma, Y. D.*, Yu, L., Huang, B. B., Dai, Y.* (2019): Direction-control of anisotropic electronic behaviors via ferroelasticity in two-dimensional α-MPI (M = Zr, Hf). Materials Horiz. 6, 1930-1937.
112. Sun, j., Peng, M., Zhang, Y., Zhang, L., Peng, R., Miao, C., Liu, D., Han, M., Feng, R., Ma, Y. D., Dai, Y., He, L., Shan, C., Pan, A. *, Hu, W. *, Yang, Z. * (2019): Ultrahigh hole mobility of Sn-catalyzed GaSb nanowires for high speed infrared photodetectors. Nano Lett. 19, 5920-5929.
111. Yang, H. C., Zhao, P., Ma, Y. D.*, Lv, X., Huang, B. B., Dai, Y.* (2019): Janus single-layer group-III monochalcogenides: A promising visible-light photocatalyst. J. Phys. D: Appl. Phys. 7, 12060-12067.
110. Shen, S. Y., Ma, Y. D.*, Wang, H., Huang, B. B., Dai, Y.* (2019): Single-Layer PtI2: A Multifunctional Material with Promising Photocatalysis toward Oxygen Evolution Reaction and Negative Poisson’s Ratio. ACS Appl. Mater. Interfaces 11, 31793-31798.
109. Xu, X. L.,Ma, Y. D.*, Zhang, T., Lei, C. A., Huang, B. B., Dai, Y.* (2019): Nonmetal-Atom-Doping-Induced Valley Polarization in Single-Layer Tl2O. J. Phys. Chem. Lett. 10, 4535-4541.
108. Zhao, P., Ma, Y. D.*, Wang, H., Huang, B. B., Dai, Y.* (2019): Room temperature quantum anomalous Hall effect in single-layer CrP2S6. J. Phys. Chem. C 123, 14707-14711.
107. Peng, R., Ma, Y. D.*, Wu, Q., Huang, B. B., Dai, Y.* (2019): Two-dimensional materials with intrinsic auxeticity: Progress and perspectives. Nanoscale 11, 11413-11428 (review).
106. Shen, S. Y., Liu, C., Ma, Y. D.*, Huang, B. B., Dai, Y.* (2019): Robust two-dimensional ferroelectricity in single-layer γ-SbP and γ-SbAs. Nanoscale 11, 11864-11871.
105. Peng, R., Ma, Y. D.*, He, Z. L., Huang, B. B., Kou, L. Z., Dai, Y.* (2019): Single-layer Ag2S: A two-dimensional bi-directional auxetic semiconductor. Nano Lett. 19,1227.
104. Yang, H. C., Ma, Y. D.*, Zhang, S., Jin, H., Huang, B. B., Dai, Y.* (2019): GeSe@SnS: Stacked janus structures for overall water splitting. J. Mater. Chem. A 7, 12060-12067.
103. Xu, X. L.,Ma, Y. D.*, Huang, B. B., Dai, Y.* (2019): Two-dimensional ferroelastic semiconductors in single-layer indium oxygen halide InOY (Y = Cl/Br). Phys. Chem. Chem. Phys. 21, 7440.
102. Zhao, P., Liang, Y., Ma, Y. D.*, Huang, B. B., Dai, Y.* (2019): Janus chromium dichalcogenide monolayers with low carrier recombination for photocatalytic overall water-splitting under infrared light. J. Phys. Chem. C 123, 4186.
101. Zhang, T., Ma, Y. D.*, Huang, B. B., Dai, Y.* (2019): Two-Dimensional Penta-BN2 with High Specific Capacity for Li-Ion Batteries. ACS Appl. Mater. Interfaces 11, 6104.
100. Peng, R., Ma, Y. D.*, Huang, B. B., Dai, Y.* (2019): Two-dimensional Janus PtSSe for photocatalytic water splitting under the visible or infrared light. J. Mater. Chem. A 7, 603.
2018年论文
99. Urban, J. M., Baranowski, M., Kuc, A., Surrente, A., Ma, Y. D., W?odarczyk, D., Suchocki, A., Ovchinnikov, D., Heine, T., Maude, D. K., Kis, A., Plochocka, P. (2018): Non equilibrium anisotropic excitons in atomically thin ReS2. 2D Materi. 6, 015012.
98. Kou, L. Z.*, Ma, Y. D., Liao, T., Du, A. J., Chen, C. F. (2018): Multiferroic and ferroic topological order in ligand-functionalized germanene and arsenene. Phys. Rev. Applied 10, 024043.
97. Ma, Y. D., Kou, L. Z., Huang, B. B., Dai, Y.*, Heine. T.* (2018): Two-dimensional ferroelastic topological insulators in single-layer Janus transition metal dichalcogenides MSSe (M=Mo, W). Phys. Rev. B 98, 085420.
96. Shang, J.; Ma, Y. D.; Gu, Y. T.; Kou, L. Z.* (2018): Two dimensional boron nanosheets: synthesis, properties and applications. Phys. Chem. Chem. Phys. 20, 28964-28978 (review).
95. Tang, X.; Li, S.; Ma, Y. D.; Du, A.; Liao, T.; Gu, Y. T.; Kou, L. Z.* (2018): Distorted Janus transition metal dichalcogenides: Stable two dimensional materials with sizable band gap and ultrahigh carrier mobility. J. Phys. Chem. C 122, 19153.
94. Zhao, P., Ma, Y. D.*, Lv, X. S., Li, M. M., Huang, B. B., Dai, Y.* (2018): Two-dimensional III2-VI3 materials: Promising photocatalysts for overall water splitting under infrared light spectrum. Nano Energy 51, 533-538.
93. Kou, L. Z.*, Niu, C. W., Fu, H., Ma, Y. D., Yan, B. H.., Chen, C. F. (2018): Tunable quantum order in bilayer Bi2Te3: Stacking dependent quantum spin Hall states. Appl. Phys. Lett. 112, 243103.
92. Peng, R., Ma, Y. D.*, Zhang, S., Huang, B. B., Dai, Y.* (2018): Valley Polarization in Janus single-layer MoSSe via magnetic doping. J. Phys. Chem. Lett. 9(13), 3612–3617.
91. Zhang, S.,Ma, Y. D.*, Peng, R., Huang, B. B., Dai, Y.* (2018): Ideal inert substrates for planar antimonene: h-BN and hydrogenated SiC (0001). Phys. Chem. Chem. Phys. 20 (36), 23397-23402.
90. Zhao, P.,Jin,H., Lv,X., Huang, B. B.,Ma, Y. D.*, Dai, Y.* (2018): Modified MXene:Promising electrode materials for constructing Ohmic contact with MoS2 for electronic device application. Phys. Chem. Chem. Phys. 20, 16551-16557.
89. Shen, S. Y., Liang, Y., Ma, Y. D.,Huang, B. B.,Wei W.*, Dai, Y.* (2018): Tl2S: a metal-shrouded two-dimensional semiconductor. Phys. Chem. Chem. Phys. 20, 14778-14784.
88. Wei, Y. N., Ma, Y. D.*, Wei, W., Li, M. M., Huang, B. B., Dai, Y.* (2018): Promising photocatalysts for water splitting in BeN2 and MgN2 monolayers. J. Phys. Chem. C 122(15), 8102–8108.
87.Yin, N., Dai, Y.*, Wei, W., Ma, Y. D. Huang, B. B., (2018): γ-Graphyne analogues based on As and Sb elements. Comp. Mater. Sci. 150, 325-328.
86. Kou, L. Z.*, Fu, H. X., Ma, Y. D., Yan, B. H., Liao, T., Du, A. J., Chen, C. F. (2018): Two-dimensional ferroelectric topological insulators in functionalized atomic thin bismuth layers. Phys. Rev. B 97, 075429.
85. Ma, Y. D., Kou, L. Z., Du, A. J., Huang, B. B., Dai, Y.*, Heine. T.* (2018): Conduction-band valley spin splitting in single-layer H-Tl2O. Phys. Rev. B 97, 035444.
84. Yang, H. C., Li, J. J., Yu, L., Huang, B. B., Ma, Y. D.*, Dai, Y.* (2018): Theoretical study on electronic properties of in-plane CdS/ZnSe heterostructure: Type-II band alignment for water splitting. J. Mater. Chem. A 6, 4161-4166.
83. Liang, Y., Dai, Y.*, Ma, Y. D., Ju, L., Wei, W., Huang, B. B. (2018): Novel titanium nitride halide TiNX (X = F, Cl, Br) monolayers: potential materials for highly efficient excitonic solar cells. J. Mater. Chem. A 6, 2073-2080.
2017年论文
82.Ma,Y. D., Kuc, A., Heine. T.* (2017):Single-layer Tl2O: A metal-shrouded 2D semiconductor with high electronic mobility.J. Am. Chem. Soc.139 (34), 11694-11697.
81. Jing, Y.,Ma,Y. D., Wang, Y., Li, Y. F.*, Heine, T. * (2017):Ultrathin layers of PdPX (X= S, Se): Two dimensional semiconductors for photocatalytic water splitting.Chem. Eur. J.23, 1-6.
80. Kou, L. Z. *, Du, A. J.;Ma, Y. D., Liao, T., Chen, .C. F. (2017):Charging assisted structural phase transitions in monolayer InSe.Phys. Chem. Chem. Phys.19, 22502-22508.
79.Ma,Y. D., Kuc, A., Jing, Y., Philipsen, P., Heine. T.* (2017):Haeckelite NbS2two-dimensional crystal - a diamagnetic high mobility semiconductor with Nb4+ions.Angew. Chem. Int. Ed.56, 10214-10218.
78. Sun, Q. L., Dai, Y.*, Yin, N., Yu, L.,Ma,Y. D., Wei, W., Huang, B. B. (2017):Two-dimensional square transition metal dichalcogenides with lateral heterostructuresNano Resear.DOI https://doi.org/10.1007/s12274-017-1605-4.
77. Zhang, S. L., Zhou, W. H.,Ma, Y. D., Ji, J. P., Cai, B., Yang, S. A., Zhu, Z., Chen, Z. F., Zeng, H. B.* (2017):Antimonene oxides: Emerging tunable direct bandgap semiconductor and novel topological insulator.Nano Lett.17 (6), 3434-3440.
76. Li, X. R., Dai, Y.*,Ma,Y. D., Li, M. M., Yu, L., Huang, B. B. (2017):Landscape of DNA-like inorganic metal-free double helical semiconductors and potential applications in photocatalytic water splitting.J. Mater. Chem. A5(18), 8484-8492.
75.Ma,Y. D.*, Jing, Y., Heine. T.* (2017):Double Dirac point semimetal in two-dimensional material: Ta2Se3.2D Materi.4, 025111.
74. Li, X. R., Dai, Y.*, Niu, C. W.,Ma,Y. D., Wei, W., Huang, B. B. (2017):MoTe2as a good match for GeI, preserving nontrivial quantum spin Hall phases.Nano Resear.10 (8), 2823-2832.
73. Kou, L. Z. *,Ma, Y. D., Sun, Z. Q., Heine, T., Chen, C. F. (2017):Two dimensional topological insulators: Progress and prospects.J. Phys. Chem. Lett.8(8), 1905-1919 (Review).
72. Jing, Y.,Ma,Y. D., Li, Y. F.*, Heine, T. * (2017):GeP3: A small indirect band gap 2D crystal with high carrier mobility and strong interlayer quantum confinement.Nano Lett.17, 1833-1838.
71. Sun, Q. L., Dai, Y.*, Niu, C W.,Ma,Y. D., Yu, L., Wei, W., Huang, B. B. (2017):Lateral topological crystalline insulator heterostructure.2D Materi.4, 025038.
2016年论文
70. Kou, L. Z.*,Ma, Y. D., Tang, C., Sun, Z. Q., Du, A. J., Chen, C. F., (2016):Auxetic and ferroelastic borophane: A novel 2D material with negative possion’s ratio and switchable Dirac transport channels.Nano Lett.16, 7910–7914
69.Ma,Y. D.*, Kou, L. Z., Dai, Y., Heine. T.* (2016):Proposed two-dimensional topological insulator in SiTe.Phys. Rev. B94, 201104 (Rapid Communication).
68. Kou, L. Z.*,Ma, Y. D., Zhou, L. J., Sun, Z. Q., Gu, Y. T., Du, A. J., Smith, S. C., Chen, C. F. (2016):High-mobility anisotropic transport in few-layer γ-B28 films.Nanoscale8, 20111-20117.
67. Liu, Q. Q., Dai, Y.*, Li, X. R.,Ma,Y. D., Ma, X. C., Huang, B. B. (2016):Giant spin–orbit coupling topological insulator h-Ga2Bi2with exotic O-bridge states.Nanoscale8, 19066-19074.
66.Ma,Y. D.*, Kou, L. Z., Dai, Y., Heine. T.* (2016):Two-dimensional topological insulators in group-11 chalcogenide compounds: M2Te (M=Cu, Ag).Phys. Rev. B93 (23), 235451.
65. Sun, Q. L., Dai, Y.*,Ma,Y. D., Yin, N., Wei, W., Yu, L., Huang, B. B. (2016):Design of lateral heterostructure from arsenene and antimonene.2D Materi.3, 3.
64. Li, X. R., Dai, Y.*,Ma,Y. D., Sun, Q. L., Wei, W., Huang, B. B. (2016):Exotic quantum spin Hall effect and anisotropic spin splitting in carbon based TMC6(TM = Mo, W) Kagome Monolayers.Carbon109, 788-794.
63. Zhang, S. L., Xie, M. Q., Cai, B., Zhang, H. J.,Ma, Y. D., Chen, Z. F., Zhu, Z., Hu, Z. Y., Zeng, H. B.* (2016):Semiconductor-topological insulator transition of two-dimensional SbAs induced by biaxial tensile strain.Phys. Rev. B93, 245303.
62.Ma,Y. D.*, Kou, L. Z., Li, X., Dai, Y., Heine. T.* (2016):Room temperature quantum spin Hall states in two-dimensional crystals composed of pentagonal rings and their quantum wells.NPG Asia Mater.8, e264.
61. Sun, Q. L., Dai, Y.*,Ma,Y. D., Jing, T., Wei, W., Huang, B. B*. (2016):Ab initio prediction and characterization of Mo2C monolayer as anodes for lithium-ion and sodium-ion batteries.J. Phys. Chem. Lett.7, 937-943.
60.Ma,Y. D.*, Kou, L. Z., Li, X., Dai, Y., Heine. T.* (2016):Two-dimensional transition metal dichalcogenides with a hexagonal lattice: Room-temperature quantum spin Hall insulators.Phys. Rev. B93(3), 035442.
59. Juarez-Mosqueda, R.*,Ma,Y. D.*, Thomas, H.*(2016):Prediction of topological phase transition in X2–SiGe monolayers.Phys. Chem. Chem. Phys.18, 3669-3674.
58.Liu, Q. Q., Dai, Y.*,Ma,Y. D., Li, X. R., Li, T. J., Niu, C. W.; Huang, B. B. (2016):Large gap quantum spin Hall insulators of hexagonal III-Bi monolayer.Sci. Rep.6, 34861.
2015年论文
57. Kou, L. Z.*, Tan, X.,Ma, Y. D., Tahini, H., Zhou, L. J., Sun, Z. Q., Du, A. J., Chen, C. F., Smith, S. C. (2015):Tetragonal bismuth bilayer: A stable and robust quantum spin hall insulator.2D Mater.2(4), 045010.
56. Zhang, H. J.,Ma,Y. D., Chen, Z. F.* (2015):Quantum spin Hall insulators in strain-modified arsenene.Nanoscale7(45), 19152-19159.
55.Ma,Y. D.*, Kou, L. Z., Li, X., Dai, Y., Smith, S. C., Heine. T.* (2015):Quantum spin Hall effect and topological phase transition in two-dimensional square transition metal dichalcogenides.Phys. Rev. B92, 085427.
54. Sun, Q. L., Dai, Y.*,Ma,Y. D., Wei, W., Yu, L., Huang, B. B. (2015):Ideal spintronics in molecule-based novel organometallic nanowires.Sci. Rep.5, 12772.
53. Kou, L. Z.*,Ma,Y. D., Yan B. H., Tan, X., Chen, C., Smith, S. C. (2015):Encapsulated silicene: A robust large-gap topological insulator.ACS Appl. Mater. Interfaces7(34), 19226-19233.
52.Ma,Y. D.*, Kou, L. Z., Du, A. J., Heine. T.* (2015):Group 14 element based noncentrosymmetric quantum spin Hall insulators with large bulk gap.Nano Research8, 3412-3420.
51. Sun, Q. L., Dai, Y.*,Ma,Y. D., Wei, W., Huang, B. B. (2015):Vertical and bidirectional heterostructures from graphyne and MSe2(M= Mo, W).J. Phys. Chem. Lett.6, 2694-2701.
50.Ma,Y. D.*, Li, X., Kou, L. Z., Yan, B. H., Niu, C. W., Dai, Y., Heine. T.* (2015):Two-dimensional inversion asymmetric topological insulators in functionalized III-Bi bilayers.Phys. Rev. B91, 235306.
49. Wei, W., Dai, Y.*, Niu, C. W., Li. X.,Ma,Y. D., Huang, B. B. (2015):Electronic properties of two-dimensional van der Waals GaS/GaSe heterostructures.J. Mater. Chem. C3(43), 11548-11554
48. Sun, Q. L., Dai, Y.*,Ma,Y. D., Li, X. R., Wei, W., Huang, B. B. (2015):Two-dimensional metalloporphyrin monolayers with intriguing electronic and spintronic properties.J. Mater. Chem. C3, 6901-6907.
47. Li, X. R., Dai, Y.*,Ma,Y. D., Liu, Q. Q., Huang, B. B. (2015):Prediction of large-gap quantum spin Hall insulator and rashba-dresselhaus effect in two-dimensional g-TlA (A= N, P, As, and Sb) monolayer films.Nano Research8, 2954-2962.
46. Kou, L. Z.*,Ma,Y. D., Smith, S. C., Chen, C. F. (2015):Anisotropic ripple deformation in phosphorene.J. Phys. Chem. Lett.6, 1509-1513.
45.Ma,Y. D.*, Dai, Y., Kou, L. Z., Frauenheim, T., Heine. T.*(2015):Robust two-dimensional topological insulators in methyl-functionalized bismuth, antimony and lead bilayer films.Nano Lett.15, 1083-1089.
44. Li, X. R., Dai, Y.*,Ma,Y. D., Liu, Q. Q., Huang, B. B.(2015):Intriguing electronic properties of two-dimensional MoS2/TM2CO2(TM= Ti, Zr, or Hf) hetero-bilayers: type-II semiconductors with tunable band gaps.Nanotechnology26, 135703.
43. Sun, Q. L., Dai, Y.*,Ma,Y. D., Wei, W., Huang, B. B. (2015):Lateral heterojunctions within monolayer h-BN/graphene: A first-principles study.RSC Adv.5, 33037-33043
42. Kou, L. Z.*,Ma,Y. D., Tan, X., Frauenheim, T., Du, A. J., Smith, S. C., (2015):Structural and electronic properties of layered arsenic and antimony arsenide.J. Phys. Chem. C119, 6918–6922.
41. Jin, H., Dai, Y.*,Ma,Y. D., Li, X. R., Wei, W., Yu, L., Huang, B. B.(2015):The electronic and magnetic properties of transition-metal element doped three-dimensional topological Dirac semimetal in Cd3As2.J. Mater. Chem. C3, 3547-3551.
2014年及之前论文
40.Ma,Y. D., Dai, Y.*, Wei, W., Huang, B. B.,Whangbo, M. H.(2014):Strain-induced quantum spin Hall effect in methyl-substituted germanane GeCH3.Sci. Rep.4, 7297.
39.Ma,Y. D., Dai, Y.*, Yin, N., Jin, T., Huang, B. B.(2014):Ideal two-dimensional systems with a gain Rashba-type spin splitting SrFBiS2and BiOBiS2nanosheets.J. Mater. Chem. C2,8539-8545.
38.Ma,Y. D., Dai, Y.*, Li, X. R., Sun, Q. L., Huang, B. B.(2014):Prediction of two-dimensional materials with half-metallic Dirac cones: Ni2C18H12and Co2C18H12.Carbon73, 382-388.
37. Li, X. R., Dai, Y.*,Ma,Y. D., Huang, B. B.(2014):Electronic and magnetic properties of honeycomb transition metal monolayers: First-principles insights.Phys. Chem. Chem. Phys.16, 13383-13389.
36. Li, X. R., Dai, Y.*,Ma,Y. D., Han S. H., Huang, B. B.(2014):Graphene/g-C3N4bilayer: Considerable band gap opening and effective band structure engineering.Phys. Chem. Chem. Phys.16, 4230-4235.
35.Ma,Y. D., Dai, Y.*, Huang, B. B.(2014):Realization of controlling the band alignment via atomic substitution.Carbon69, 495-501.
34.Ma,Y. D., Dai, Y.*, Wei, W., Li, X. R., Huang, B. B.(2014):Emergence of electric polarity in BiTeX (X=Br and I) monolayers and the giant Rashba spin splitting.Phys. Chem. Chem. Phys.16, 17603-17609.
33.Ma,Y. D., Dai, Y.*, Lu, Y. B., Huang, B. B.(2014): Effective bandgap engineering in wrinkled germanane via tiny electric field.J. Mater. Chem. C2, 1125-1130.
32.Ma,Y. D., Dai, Y.*, Huang, B. B.(2013):Dirac cones in two-dimensional lattices: Janugraphene and chlorographene.J. Phys. Chem. Lett.4, 2471-2476.
31. Niu, C. W., Dai, Y.*, Guo, M.,Ma,Y. D., Huang, B. B., Whangbo,M.-H.(2013):Tunable topological surface and realization of insulating massive Dirac fermion state in Bi2Te2Se with co-substitution.J. Mater. Chem. C1, 114-120.
30.Ma,Y. D., Dai, Y.*, Yu, L., Niu, C. W., Huang, B. B.(2013):Engineering a topological phase transition in β-InSe via strain.New J. Phys.15, 073008.
29.Ma,Y. D., Dai, Y.*, Wei, W., Yu, L., Huang, B. B.(2013):Novel two-dimensional tetragonal monolayer: Metal-TCNQ networks.J. Phys. Chem. A117, 5171-5177.
28.Ma,Y. D., Dai, Y.*, Wei, W., Huang, B. B.(2013):Engineering intriguing electronic and magnetic properties in novel one-dimensional staircase-like metallocene wires.J. Mater. Chem. C1, 941-946.
27.Ma,Y. D., Dai, Y.*, Guo, M., Yu, L., Huang, B. B.(2013):Tunable electronic and dielectric behavior of GaS and GaSe monolayers.Phys. Chem. Chem. Phys.15, 7098-7105.
26.Ma,Y. D., Dai, Y.*, Li, X. R., Li, Z. J., Huang, B. B.(2013):First-principles study of one-dimensional sandwich wires [(P)5TM]∞ (TM=Ti, V, Cr, Mn, Fe, Co).J. Phys.: Condens. Matter.25, 395503.
25. Niu, C. W., Dai, Y.*,Ma,Y. D., Huang, B. B.(2013):Material realization of topological crystalline insulators: Role of strain and spin-orbit coupling.Mater. Express3, 159-165.
24. Sun, Q. L., Dai, Y.*,Ma,Y. D., Ma, X. C., Huang, B. B.(2013):Electronic and molecular behaviors of a novel ionic paramagnetic ruthenium (III) complex.Phys. Chem. Chem. Phys.15, 15392-15398.
23. Li, X. R.,Ma,Y. D., Dai, Y.*, Huang, B. B.(2013):Electronic and magnetic properties of one dimensional sandwich polymers: [(Ge5)TM]∞ (TM= Ti, V, Cr, Mn, Fe).J. Mater. Chem. C1, 4565-4569.
22.Ma,Y. D., Dai, Y.*, Guo, M., Niu, C. W., Zhu, Y. T., Huang, B. B.(2012):Evidence of the existence of magnetism in pristine VX2monolayers (X = S, Se) and their strain-induced tunable magnetic properties.ACS Nano6, 1695-1701.
21.Ma,Y. D., Dai, Y.*, Niu, C. W., Huang, B. B. (2012):Halogenated two-dimensional germanium: Candidate materials for being of quantum spin Hall state.J. Mater. Chem.22, 12587-12591.
20. Niu, C. W., Dai, Y.*, Zhu, Y. T.,Ma,Y. D., Yu, L., Han, S. H., Huang, B. B.(2012):Realization of tunable Dirac cone and insulating bulk states in topological insulators (Bi1-xSbx)2Te3.Sci. Rep.2, 976.
19. Wang, J. P., Wang, Z. Y., Huang, B. B.*,Ma,Y. D., Liu, Y. Y., Qin, X. Y., Zhang, X. Y., Dai, Y. (2012):Oxygen vacancy induced band-gap narrowing and enhanced visible light photocatalytic activity of ZnO.ACS Appl. Mater. Interfaces4, 4024-4030.
18.Ma,Y. D., Dai, Y,*, Guo, M., Huang, B. B.(2012):Graphene-diamond interface: Gap opening and electronic spin injection.Phys. Rev. B85, 235448.
17.Ma,Y. D., Dai, Y.*, Zhang, Z. K., Yu, L., Huang, B. B.(2012):Magnetic properties of phthalocyanine-based organometallic nanowire.Appl. Phys. Lett.101, 062405.
16.Ma,Y. D., Dai, Y.*, Guo, M., Niu, C. W., Huang, B. B.(2012):Intriguing behavior of halogenated two-dimensional tin.J. Phys. Chem. C116, 12977-12981.
15. Wei, W., Dai, Y.*, Guo, M.,Ma,Y. D., Huang, B. B. (2012):Atomic Pt and molecular H2O adsorptions on SrTiO3with and without Nb-doping: Electron trapping center and mediating roles of Pt in charge transfer from semiconductor to water.J. Solid State Chem.187, 64-69.
14. Lu, J. B., Dai, Y.*, Guo, M., Wei, W.,Ma,Y. D., Han, S. H., Huang, B. B. (2012):Structure and electronic properties and phase stabilities of the Cd(1-x)Zn(x)S solid solution in the range of 0≤x≤1.ChemPhysChem13, 147-154.
13.Ma,Y. D., Dai, Y.*, Guo, M., Niu, C. W., Zhu, Y. T., Huang, B. B.(2012):Electronic and magnetic properties of the two-dimensional C4H-type polymer with strain effects, intrinsic defects and foreign atom substitutions.Phys. Chem. Chem. Phys.14, 3651-3658.
12. Niu, C. W., Dai, Y.*, Zhu, Y. T., Lu, J. B.,Ma,Y. D., Huang, B. B.(2012):Topological phase transition and unexpected mass acquisition of Dirac fermion in TlBi(S1-xSex)2.Appl. Phys. Lett.101, 182101.
11. Niu, C. W., Dai, Y.*, Zhang, Z. K.,Ma,Y. D., Huang, B. B.(2012):Ferromagnetism and manipulation of topological surface states in Bi2Se3family by 2p light elements.Appl. Phys. Lett.100, 252410.
10.Ma,Y. D., Dai, Y.*, Guo, M., Niu, C. W., Huang, B. B.(2011):Graphene adhesion on MoS2monolayer: An ab initio study.Nanoscale3, 3883-3887.
9.Ma,Y. D., Dai, Y.*, Guo, M., Niu, C. W., Yu, L., Huang, B. B.(2011):Strain-induced magnetic transitions in half-fluorinated single layers of BN, GaN and graphene.Nanoscale3, 2301-2306.
8.Ma,Y. D., Dai, Y.*, Wei, W., Niu, C. W., Yu, L., Huang, B. B.(2011):First-principles study of the Graphene@MoSe2heterobilayers.J. Phys. Chem. C115, 20237-20241.
7.Ma,Y. D., Dai, Y.*, Guo, M., Niu, C. W., Yu, L., Huang, B. B.(2011):Magnetic properties of the semifluorinated and semihydrogenated 2D sheets of group-IV and III-V binary compounds.Appl. Surf. Sci.257, 7845-7850.
6.Ma,Y. D., Dai, Y.*, Huang, B. B.(2011):Magnetism in non-transition-metal doped CdS studied by density functional theory.Comp. Mater. Sci.50, 1661-1666.
5. Niu, C. W., Dai, Y.*, Yu, L., Guo, M.,Ma,Y. D., Huang, B. B.(2011):Quantum anomalous Hall effect in doped ternary chalcogenide topological insulators TlBiTe2and TlBiSe2.Appl. Phys. Lett.99, 142502.
4.Ma,Y. D., Dai, Y.*, Guo, M., Niu, C. W., Lu, J. B., Huang, B. B.(2011):Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe2, MoTe2and WS2monolayers.Phys. Chem. Chem. Phys. 13, 15546-15553.
3.Ma,Y. D., Dai, Y.*, Wei, W., Liu, X. H., Yu, L., Huang, B. B.(2011):Ag adsorption on Cd-terminated CdS (0001) and S-terminated CdS (000-1) surfaces: First-principles investigations.J. Solid State Chem.184, 747-752.
2. Niu, C. W., Dai, Y.*, Guo, M.,Ma,Y. D., Huang, B. B.(2011):Mn induced ferromagnetism and modulated topological surface states in Bi2Te3.Appl. Phys. Lett.98, 25250.
1.Ma,Y. D., Dai, Y.*, Jin, H., Huang, B. B.(2010):Study of ammonia molecule adsorbing on diamond (100) surface.Appl. Surf. Sci.256, 4136-4141.
研究项目
1.2017-2022, 齐鲁青年学者启动经费,
100万,主持
2.2019-2021,国家自然科学基金青年科学基金项目(11804190),
金属衣二维半导体材料的电子结构与光学性质研究,
25万,主持
3. 2018-2021,山东省青年科技人才托举工程,
山东省科学技术协会,
15万,主持
4. 2019-2021,Discovery Projects 2019 (DP**),
Cost-efficient 2D heterostructures for solar overall water splitting,
Australian Research Council,
27万澳元,
(Dr Jingsan Xu; Dr Liangzhi Kou; Prof. Markus Antonietti; Prof. Yandong Ma)
https://rms.arc.gov.au/RMS/Report/Download/Report/a3f6be6e-33f7-4fb5-98a6-
7526aaa184cf/189
5.2019-2021,山东省自然科学基金青年科学基金项目(ZR2019QA011),
单层Janus 过渡金属硫族化物能谷性质调控的理论研究,
15万,主持
学术会议报告
Invited talk(邀请报告), Chinese Materials Conference 2019,10-14 July 2019,Chengdu,China
Invited talk(邀请报告), Flatlands Beyond Graphene 2018,3-7 September 2018, Leipzig, Germany
Invited talk(邀请报告),The 20th National Conference on Condensed Matter Theory and Statistical Physics,12-15 July 2018,Chengdu,China
Invited talk(邀请报告),11th International Conference on Computational Nanoscience and New Energy Materials,23-26 June 2018,Xinxiang,China
Co-Organiser (组织者),Tailor-Made 2D-Materials and Functional Devices,27 June- 1July 2016,Bremen,Germany
其他More>>
单层Janus 过渡金属硫族化物能谷性质调控的理论研究, 2019/04/26-2022/06/30TMDs横向异质结构光生载流子的动力学性质和输运性质, 2019/12/13-2021/10/31二维新能源复合材料的计算与仿真-1, 2019/11/21-2021/12/31二维新能源复合材料的计算与仿真-4, 2019/11/21-2021/12/31二维新能源复合材料的计算与仿真, 2019/11/21-2021/12/31马衍东-山东省青年科技人才托举工程, 2018/10/01-2020/12/31
其他More>>
彭瑞.Two-dimensional materials with intrinsic auxeticity: progress and perspectives.NANOSCALE,11,11413,2020.杨再兴,马衍东,戴瑛and孙嘉敏.Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors.Nano Letters,2020.魏巍,戴瑛,牛成旺,马衍东and黄柏标.Electronic properties of two-dimensional van der Waals GaS/GaSe heterostructures.JOURNAL OF MATERIALS CHEMISTRY C,2019.马衍东,黄柏标,魏巍,戴瑛and申世英.Tl2S: a metal-shrouded two-dimensional semiconductor.Physical chemistry chemical physics,20,14778,2019.马衍东,黄柏标and戴瑛.Modified MXene:Promising electrode materials for constructing Ohmic contact with MoS2 for electronic device application.Phys. Chem. Chem. Phys.,2019.马衍东andTang, Xiao.Distorted Janus Transition Metal Dichalcogenides: Stable Two-Dimensional Materials with Sizable Band Gap and Ultrahigh Carrier Mobility.JOURNAL OF PHYSICAL CHEMISTRY C,122,19153,2019. 版权所有?山东大学 地址:中国山东省济南市山大南路27号 邮编:250100
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马衍东
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教授博士生导师硕士生导师性别:男
毕业院校:山东大学
学历:博士研究生毕业
学位:博士
在职信息:在职
所在单位:物理学院
入职时间:2017-09-20
办公地点:知新楼扫描关注
代表性论文
当前位置:中文主页>>科学研究>>代表性论文1. Peng, R., Ma, Y. D.*, Zhang, S., Kou, L. Z., Huang, B. B., Dai, Y.* (2019): Self-doped p–n junctions in two-dimensional In2X3 van der Waals materials. Materials Horiz. Accepted.
2. Zhang, T., Ma, Y. D.*, Yu, L., Huang, B. B., Dai, Y.* (2019): Direction-control of anisotropic electronic behaviors via ferroelasticity in two-dimensional α-MPI (M = Zr, Hf). Materials Horiz. Accepted.
3. Peng, R., Ma, Y. D.*, He, Z. L., Huang, B. B., Kou, L. Z., Dai, Y.* (2019): Single-layer Ag2S: A two-dimensional bi-directional auxetic semiconductor. Nano Lett. 19,1227.
4. Zhao, P., Ma, Y. D.*, Lv, X. S., Li, M. M., Huang, B. B., Dai, Y.* (2018): Two-dimensional III2-VI3 materials: Promising photocatalysts for overall water splitting under infrared light spectrum. Nano Energy 51, 533-538.
5. Ma, Y. D., Kuc, A., Heine. T.* (2017): Single-layer Tl2O: A metal-shrouded 2D semiconductor with high electronic mobility. J. Am. Chem. Soc. 139 (34), 11694–11697.
6. Ma, Y. D., Kuc, A., Jing, Y., Philipsen, P., Heine. T.* (2017): Haeckelite NbS2 two-dimensional crystal - a diamagnetic high mobility semiconductor with Nb4+ ions. Angew. Chem. Int. Ed. 56, 1- 5.
7. Ma, Y. D.*, Dai, Y., Kou, L. Z., Frauenheim, T., Heine. T.* (2015): Robust two-dimensional topological insulators in methyl-functionalized bismuth, antimony and lead bilayer films. Nano Lett. 15, 1083-1089.
8. Ma, Y. D., Dai, Y., Guo, M., Niu, C. W., Zhu, Y. T., Huang, B. B. (2012): Evidence of the existence of magnetism in pristine VX2 monolayers (X = S, Se) and their strain-induced tunable magnetic properties. ACS Nano 6, 1695-1701.
版权所有?山东大学 地址:中国山东省济南市山大南路27号 邮编:250100
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代表性论文 科研论文(full list) 研究项目 学术会议报告 其他 其他教学研究
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个人信息Personal Information
教授博士生导师硕士生导师性别:男
毕业院校:山东大学
学历:博士研究生毕业
学位:博士
在职信息:在职
所在单位:物理学院
入职时间:2017-09-20
办公地点:知新楼扫描关注
科研论文(full list)
当前位置:中文主页>>科学研究>>科研论文(full li...More Information:Researcher IDGoogleScholar
2020年论文
125. Yang, H. C., Ma, Y. D.*, Lv, X. S., Huang, B. B., Dai, Y.* (2020): Prediction of Intrinsic Electrocatalytic Activity for Hydrogen Evolution Reaction in Ti4X3 (X = C, N). J. Cataly. 10.1016/j.jcat.2020.04.010.
124. Liang, Y., Ma, Y. D.*, Zhao, P., Wang, H., Huang, B. B., Dai, Y.* (2020): High-temperature quantum anomalous Hall insulator in two-dimensional Bi2ON. Appl. Phys. Lett. Accepted.
123. Lei, C., Ma, Y. D.*, Zhang, T., Xu, X., Huang, B. B., Dai, Y.* (2020): Valley Polarization in Monolayer CrX2 (X= S, Se) with Magnetically Doping and Proximity Coupling. New J. Phys. Accepted.
122. Peng, R., Ma, Y. D.*, Wang, H., Huang, B. B., Dai, Y.* (2020): Stacking-dependent topological phase in bilayer MBi 2Te 4 (M = Ge, Sn,Pb). Phys. Rev. B 101, 115427.
121. He, Z. L., Ma, Y. D.*, Lei, C. A., Peng, R., Huang, B. B., Dai, Y.* (2020): Tl2O/WTe2 van der Waals Heterostructure with Tunable Multiple Band Alignments. J. Chem. Phys. 152, 074703.
120. Peng, R., Ma, Y. D.*, Zhang, S., Kou, L. Z., Huang, B. B., Dai, Y.* (2020): Self-doped p–n junctions in two-dimensional In2X3 van der Waals materials. Mater. Horiz. 7, 504-510.
119. Zhang, T.,Ma, Y. D.*, Xu, X. L., Lei, C. A., Huang, B. B., Dai, Y.* (2020): Two-Dimensional Ferroelastic Semiconductors in Nb2SiTe4 and Nb2GeTe4 with Promising Electronic Properties. J. Phys. Chem. Lett. 11, 2, 497-503.
2019年论文
118. Zhao, P.,Ma, Y. D.*, Lei, C. A., Wang, H., Huang, B. B., Dai, Y.* (2019):Single-layer LaBr2: Two-dimensional valleytronic semiconductor with spontaneous spin and valley polarizations.Appl. Phys. Lett.115, 261605.
117. Wu, Q., Ma, Y. D.*, Peng, R., Huang, B. B., Dai, Y.* (2019): Single-Layer Cu2WS4 with Promising Electrocatalytic Activity toward Hydrogen Evolution Reaction. ACS Appl. Mater. Interfaces 11, 45818-45824.
116. Dou, K. Y.,Ma, Y. D.*, Zhang, T., Huang, B. B., Dai, Y.* (2019): Prediction of Two-Dimensional PC6 as a Promising Anode Material for Potassium-Ion Battery. Phys. Chem. Chem. Phys. 21, 26212-26218.
115. Yang, H. C., Ma, Y. D.*, Liang, Y., Huang, B. B., Dai, Y.* (2019): Monolayer HfTeSe4: A promising two-dimensional photovoltaic material for solar cells with high efficiency. ACS Appl. Mater. Interfaces 11, 37901-37907.
114. Lei, C., Ma, Y. D.*, Xu, X., Zhang, T., Huang, B. B., Dai, Y.* (2019): Broken-gap type-III band alignment in WTe2/HfS2 van der Waals heterostructure. J. Phys. Chem. C 123, 23089-23095.
113. Zhang, T., Ma, Y. D.*, Yu, L., Huang, B. B., Dai, Y.* (2019): Direction-control of anisotropic electronic behaviors via ferroelasticity in two-dimensional α-MPI (M = Zr, Hf). Materials Horiz. 6, 1930-1937.
112. Sun, j., Peng, M., Zhang, Y., Zhang, L., Peng, R., Miao, C., Liu, D., Han, M., Feng, R., Ma, Y. D., Dai, Y., He, L., Shan, C., Pan, A. *, Hu, W. *, Yang, Z. * (2019): Ultrahigh hole mobility of Sn-catalyzed GaSb nanowires for high speed infrared photodetectors. Nano Lett. 19, 5920-5929.
111. Yang, H. C., Zhao, P., Ma, Y. D.*, Lv, X., Huang, B. B., Dai, Y.* (2019): Janus single-layer group-III monochalcogenides: A promising visible-light photocatalyst. J. Phys. D: Appl. Phys. 7, 12060-12067.
110. Shen, S. Y., Ma, Y. D.*, Wang, H., Huang, B. B., Dai, Y.* (2019): Single-Layer PtI2: A Multifunctional Material with Promising Photocatalysis toward Oxygen Evolution Reaction and Negative Poisson’s Ratio. ACS Appl. Mater. Interfaces 11, 31793-31798.
109. Xu, X. L.,Ma, Y. D.*, Zhang, T., Lei, C. A., Huang, B. B., Dai, Y.* (2019): Nonmetal-Atom-Doping-Induced Valley Polarization in Single-Layer Tl2O. J. Phys. Chem. Lett. 10, 4535-4541.
108. Zhao, P., Ma, Y. D.*, Wang, H., Huang, B. B., Dai, Y.* (2019): Room temperature quantum anomalous Hall effect in single-layer CrP2S6. J. Phys. Chem. C 123, 14707-14711.
107. Peng, R., Ma, Y. D.*, Wu, Q., Huang, B. B., Dai, Y.* (2019): Two-dimensional materials with intrinsic auxeticity: Progress and perspectives. Nanoscale 11, 11413-11428 (review).
106. Shen, S. Y., Liu, C., Ma, Y. D.*, Huang, B. B., Dai, Y.* (2019): Robust two-dimensional ferroelectricity in single-layer γ-SbP and γ-SbAs. Nanoscale 11, 11864-11871.
105. Peng, R., Ma, Y. D.*, He, Z. L., Huang, B. B., Kou, L. Z., Dai, Y.* (2019): Single-layer Ag2S: A two-dimensional bi-directional auxetic semiconductor. Nano Lett. 19,1227.
104. Yang, H. C., Ma, Y. D.*, Zhang, S., Jin, H., Huang, B. B., Dai, Y.* (2019): GeSe@SnS: Stacked janus structures for overall water splitting. J. Mater. Chem. A 7, 12060-12067.
103. Xu, X. L.,Ma, Y. D.*, Huang, B. B., Dai, Y.* (2019): Two-dimensional ferroelastic semiconductors in single-layer indium oxygen halide InOY (Y = Cl/Br). Phys. Chem. Chem. Phys. 21, 7440.
102. Zhao, P., Liang, Y., Ma, Y. D.*, Huang, B. B., Dai, Y.* (2019): Janus chromium dichalcogenide monolayers with low carrier recombination for photocatalytic overall water-splitting under infrared light. J. Phys. Chem. C 123, 4186.
101. Zhang, T., Ma, Y. D.*, Huang, B. B., Dai, Y.* (2019): Two-Dimensional Penta-BN2 with High Specific Capacity for Li-Ion Batteries. ACS Appl. Mater. Interfaces 11, 6104.
100. Peng, R., Ma, Y. D.*, Huang, B. B., Dai, Y.* (2019): Two-dimensional Janus PtSSe for photocatalytic water splitting under the visible or infrared light. J. Mater. Chem. A 7, 603.
2018年论文
99. Urban, J. M., Baranowski, M., Kuc, A., Surrente, A., Ma, Y. D., W?odarczyk, D., Suchocki, A., Ovchinnikov, D., Heine, T., Maude, D. K., Kis, A., Plochocka, P. (2018): Non equilibrium anisotropic excitons in atomically thin ReS2. 2D Materi. 6, 015012.
98. Kou, L. Z.*, Ma, Y. D., Liao, T., Du, A. J., Chen, C. F. (2018): Multiferroic and ferroic topological order in ligand-functionalized germanene and arsenene. Phys. Rev. Applied 10, 024043.
97. Ma, Y. D., Kou, L. Z., Huang, B. B., Dai, Y.*, Heine. T.* (2018): Two-dimensional ferroelastic topological insulators in single-layer Janus transition metal dichalcogenides MSSe (M=Mo, W). Phys. Rev. B 98, 085420.
96. Shang, J.; Ma, Y. D.; Gu, Y. T.; Kou, L. Z.* (2018): Two dimensional boron nanosheets: synthesis, properties and applications. Phys. Chem. Chem. Phys. 20, 28964-28978 (review).
95. Tang, X.; Li, S.; Ma, Y. D.; Du, A.; Liao, T.; Gu, Y. T.; Kou, L. Z.* (2018): Distorted Janus transition metal dichalcogenides: Stable two dimensional materials with sizable band gap and ultrahigh carrier mobility. J. Phys. Chem. C 122, 19153.
94. Zhao, P., Ma, Y. D.*, Lv, X. S., Li, M. M., Huang, B. B., Dai, Y.* (2018): Two-dimensional III2-VI3 materials: Promising photocatalysts for overall water splitting under infrared light spectrum. Nano Energy 51, 533-538.
93. Kou, L. Z.*, Niu, C. W., Fu, H., Ma, Y. D., Yan, B. H.., Chen, C. F. (2018): Tunable quantum order in bilayer Bi2Te3: Stacking dependent quantum spin Hall states. Appl. Phys. Lett. 112, 243103.
92. Peng, R., Ma, Y. D.*, Zhang, S., Huang, B. B., Dai, Y.* (2018): Valley Polarization in Janus single-layer MoSSe via magnetic doping. J. Phys. Chem. Lett. 9(13), 3612–3617.
91. Zhang, S.,Ma, Y. D.*, Peng, R., Huang, B. B., Dai, Y.* (2018): Ideal inert substrates for planar antimonene: h-BN and hydrogenated SiC (0001). Phys. Chem. Chem. Phys. 20 (36), 23397-23402.
90. Zhao, P.,Jin,H., Lv,X., Huang, B. B.,Ma, Y. D.*, Dai, Y.* (2018): Modified MXene:Promising electrode materials for constructing Ohmic contact with MoS2 for electronic device application. Phys. Chem. Chem. Phys. 20, 16551-16557.
89. Shen, S. Y., Liang, Y., Ma, Y. D.,Huang, B. B.,Wei W.*, Dai, Y.* (2018): Tl2S: a metal-shrouded two-dimensional semiconductor. Phys. Chem. Chem. Phys. 20, 14778-14784.
88. Wei, Y. N., Ma, Y. D.*, Wei, W., Li, M. M., Huang, B. B., Dai, Y.* (2018): Promising photocatalysts for water splitting in BeN2 and MgN2 monolayers. J. Phys. Chem. C 122(15), 8102–8108.
87.Yin, N., Dai, Y.*, Wei, W., Ma, Y. D. Huang, B. B., (2018): γ-Graphyne analogues based on As and Sb elements. Comp. Mater. Sci. 150, 325-328.
86. Kou, L. Z.*, Fu, H. X., Ma, Y. D., Yan, B. H., Liao, T., Du, A. J., Chen, C. F. (2018): Two-dimensional ferroelectric topological insulators in functionalized atomic thin bismuth layers. Phys. Rev. B 97, 075429.
85. Ma, Y. D., Kou, L. Z., Du, A. J., Huang, B. B., Dai, Y.*, Heine. T.* (2018): Conduction-band valley spin splitting in single-layer H-Tl2O. Phys. Rev. B 97, 035444.
84. Yang, H. C., Li, J. J., Yu, L., Huang, B. B., Ma, Y. D.*, Dai, Y.* (2018): Theoretical study on electronic properties of in-plane CdS/ZnSe heterostructure: Type-II band alignment for water splitting. J. Mater. Chem. A 6, 4161-4166.
83. Liang, Y., Dai, Y.*, Ma, Y. D., Ju, L., Wei, W., Huang, B. B. (2018): Novel titanium nitride halide TiNX (X = F, Cl, Br) monolayers: potential materials for highly efficient excitonic solar cells. J. Mater. Chem. A 6, 2073-2080.
2017年论文
82.Ma,Y. D., Kuc, A., Heine. T.* (2017):Single-layer Tl2O: A metal-shrouded 2D semiconductor with high electronic mobility.J. Am. Chem. Soc.139 (34), 11694-11697.
81. Jing, Y.,Ma,Y. D., Wang, Y., Li, Y. F.*, Heine, T. * (2017):Ultrathin layers of PdPX (X= S, Se): Two dimensional semiconductors for photocatalytic water splitting.Chem. Eur. J.23, 1-6.
80. Kou, L. Z. *, Du, A. J.;Ma, Y. D., Liao, T., Chen, .C. F. (2017):Charging assisted structural phase transitions in monolayer InSe.Phys. Chem. Chem. Phys.19, 22502-22508.
79.Ma,Y. D., Kuc, A., Jing, Y., Philipsen, P., Heine. T.* (2017):Haeckelite NbS2two-dimensional crystal - a diamagnetic high mobility semiconductor with Nb4+ions.Angew. Chem. Int. Ed.56, 10214-10218.
78. Sun, Q. L., Dai, Y.*, Yin, N., Yu, L.,Ma,Y. D., Wei, W., Huang, B. B. (2017):Two-dimensional square transition metal dichalcogenides with lateral heterostructuresNano Resear.DOI https://doi.org/10.1007/s12274-017-1605-4.
77. Zhang, S. L., Zhou, W. H.,Ma, Y. D., Ji, J. P., Cai, B., Yang, S. A., Zhu, Z., Chen, Z. F., Zeng, H. B.* (2017):Antimonene oxides: Emerging tunable direct bandgap semiconductor and novel topological insulator.Nano Lett.17 (6), 3434-3440.
76. Li, X. R., Dai, Y.*,Ma,Y. D., Li, M. M., Yu, L., Huang, B. B. (2017):Landscape of DNA-like inorganic metal-free double helical semiconductors and potential applications in photocatalytic water splitting.J. Mater. Chem. A5(18), 8484-8492.
75.Ma,Y. D.*, Jing, Y., Heine. T.* (2017):Double Dirac point semimetal in two-dimensional material: Ta2Se3.2D Materi.4, 025111.
74. Li, X. R., Dai, Y.*, Niu, C. W.,Ma,Y. D., Wei, W., Huang, B. B. (2017):MoTe2as a good match for GeI, preserving nontrivial quantum spin Hall phases.Nano Resear.10 (8), 2823-2832.
73. Kou, L. Z. *,Ma, Y. D., Sun, Z. Q., Heine, T., Chen, C. F. (2017):Two dimensional topological insulators: Progress and prospects.J. Phys. Chem. Lett.8(8), 1905-1919 (Review).
72. Jing, Y.,Ma,Y. D., Li, Y. F.*, Heine, T. * (2017):GeP3: A small indirect band gap 2D crystal with high carrier mobility and strong interlayer quantum confinement.Nano Lett.17, 1833-1838.
71. Sun, Q. L., Dai, Y.*, Niu, C W.,Ma,Y. D., Yu, L., Wei, W., Huang, B. B. (2017):Lateral topological crystalline insulator heterostructure.2D Materi.4, 025038.
2016年论文
70. Kou, L. Z.*,Ma, Y. D., Tang, C., Sun, Z. Q., Du, A. J., Chen, C. F., (2016):Auxetic and ferroelastic borophane: A novel 2D material with negative possion’s ratio and switchable Dirac transport channels.Nano Lett.16, 7910–7914
69.Ma,Y. D.*, Kou, L. Z., Dai, Y., Heine. T.* (2016):Proposed two-dimensional topological insulator in SiTe.Phys. Rev. B94, 201104 (Rapid Communication).
68. Kou, L. Z.*,Ma, Y. D., Zhou, L. J., Sun, Z. Q., Gu, Y. T., Du, A. J., Smith, S. C., Chen, C. F. (2016):High-mobility anisotropic transport in few-layer γ-B28 films.Nanoscale8, 20111-20117.
67. Liu, Q. Q., Dai, Y.*, Li, X. R.,Ma,Y. D., Ma, X. C., Huang, B. B. (2016):Giant spin–orbit coupling topological insulator h-Ga2Bi2with exotic O-bridge states.Nanoscale8, 19066-19074.
66.Ma,Y. D.*, Kou, L. Z., Dai, Y., Heine. T.* (2016):Two-dimensional topological insulators in group-11 chalcogenide compounds: M2Te (M=Cu, Ag).Phys. Rev. B93 (23), 235451.
65. Sun, Q. L., Dai, Y.*,Ma,Y. D., Yin, N., Wei, W., Yu, L., Huang, B. B. (2016):Design of lateral heterostructure from arsenene and antimonene.2D Materi.3, 3.
64. Li, X. R., Dai, Y.*,Ma,Y. D., Sun, Q. L., Wei, W., Huang, B. B. (2016):Exotic quantum spin Hall effect and anisotropic spin splitting in carbon based TMC6(TM = Mo, W) Kagome Monolayers.Carbon109, 788-794.
63. Zhang, S. L., Xie, M. Q., Cai, B., Zhang, H. J.,Ma, Y. D., Chen, Z. F., Zhu, Z., Hu, Z. Y., Zeng, H. B.* (2016):Semiconductor-topological insulator transition of two-dimensional SbAs induced by biaxial tensile strain.Phys. Rev. B93, 245303.
62.Ma,Y. D.*, Kou, L. Z., Li, X., Dai, Y., Heine. T.* (2016):Room temperature quantum spin Hall states in two-dimensional crystals composed of pentagonal rings and their quantum wells.NPG Asia Mater.8, e264.
61. Sun, Q. L., Dai, Y.*,Ma,Y. D., Jing, T., Wei, W., Huang, B. B*. (2016):Ab initio prediction and characterization of Mo2C monolayer as anodes for lithium-ion and sodium-ion batteries.J. Phys. Chem. Lett.7, 937-943.
60.Ma,Y. D.*, Kou, L. Z., Li, X., Dai, Y., Heine. T.* (2016):Two-dimensional transition metal dichalcogenides with a hexagonal lattice: Room-temperature quantum spin Hall insulators.Phys. Rev. B93(3), 035442.
59. Juarez-Mosqueda, R.*,Ma,Y. D.*, Thomas, H.*(2016):Prediction of topological phase transition in X2–SiGe monolayers.Phys. Chem. Chem. Phys.18, 3669-3674.
58.Liu, Q. Q., Dai, Y.*,Ma,Y. D., Li, X. R., Li, T. J., Niu, C. W.; Huang, B. B. (2016):Large gap quantum spin Hall insulators of hexagonal III-Bi monolayer.Sci. Rep.6, 34861.
2015年论文
57. Kou, L. Z.*, Tan, X.,Ma, Y. D., Tahini, H., Zhou, L. J., Sun, Z. Q., Du, A. J., Chen, C. F., Smith, S. C. (2015):Tetragonal bismuth bilayer: A stable and robust quantum spin hall insulator.2D Mater.2(4), 045010.
56. Zhang, H. J.,Ma,Y. D., Chen, Z. F.* (2015):Quantum spin Hall insulators in strain-modified arsenene.Nanoscale7(45), 19152-19159.
55.Ma,Y. D.*, Kou, L. Z., Li, X., Dai, Y., Smith, S. C., Heine. T.* (2015):Quantum spin Hall effect and topological phase transition in two-dimensional square transition metal dichalcogenides.Phys. Rev. B92, 085427.
54. Sun, Q. L., Dai, Y.*,Ma,Y. D., Wei, W., Yu, L., Huang, B. B. (2015):Ideal spintronics in molecule-based novel organometallic nanowires.Sci. Rep.5, 12772.
53. Kou, L. Z.*,Ma,Y. D., Yan B. H., Tan, X., Chen, C., Smith, S. C. (2015):Encapsulated silicene: A robust large-gap topological insulator.ACS Appl. Mater. Interfaces7(34), 19226-19233.
52.Ma,Y. D.*, Kou, L. Z., Du, A. J., Heine. T.* (2015):Group 14 element based noncentrosymmetric quantum spin Hall insulators with large bulk gap.Nano Research8, 3412-3420.
51. Sun, Q. L., Dai, Y.*,Ma,Y. D., Wei, W., Huang, B. B. (2015):Vertical and bidirectional heterostructures from graphyne and MSe2(M= Mo, W).J. Phys. Chem. Lett.6, 2694-2701.
50.Ma,Y. D.*, Li, X., Kou, L. Z., Yan, B. H., Niu, C. W., Dai, Y., Heine. T.* (2015):Two-dimensional inversion asymmetric topological insulators in functionalized III-Bi bilayers.Phys. Rev. B91, 235306.
49. Wei, W., Dai, Y.*, Niu, C. W., Li. X.,Ma,Y. D., Huang, B. B. (2015):Electronic properties of two-dimensional van der Waals GaS/GaSe heterostructures.J. Mater. Chem. C3(43), 11548-11554
48. Sun, Q. L., Dai, Y.*,Ma,Y. D., Li, X. R., Wei, W., Huang, B. B. (2015):Two-dimensional metalloporphyrin monolayers with intriguing electronic and spintronic properties.J. Mater. Chem. C3, 6901-6907.
47. Li, X. R., Dai, Y.*,Ma,Y. D., Liu, Q. Q., Huang, B. B. (2015):Prediction of large-gap quantum spin Hall insulator and rashba-dresselhaus effect in two-dimensional g-TlA (A= N, P, As, and Sb) monolayer films.Nano Research8, 2954-2962.
46. Kou, L. Z.*,Ma,Y. D., Smith, S. C., Chen, C. F. (2015):Anisotropic ripple deformation in phosphorene.J. Phys. Chem. Lett.6, 1509-1513.
45.Ma,Y. D.*, Dai, Y., Kou, L. Z., Frauenheim, T., Heine. T.*(2015):Robust two-dimensional topological insulators in methyl-functionalized bismuth, antimony and lead bilayer films.Nano Lett.15, 1083-1089.
44. Li, X. R., Dai, Y.*,Ma,Y. D., Liu, Q. Q., Huang, B. B.(2015):Intriguing electronic properties of two-dimensional MoS2/TM2CO2(TM= Ti, Zr, or Hf) hetero-bilayers: type-II semiconductors with tunable band gaps.Nanotechnology26, 135703.
43. Sun, Q. L., Dai, Y.*,Ma,Y. D., Wei, W., Huang, B. B. (2015):Lateral heterojunctions within monolayer h-BN/graphene: A first-principles study.RSC Adv.5, 33037-33043
42. Kou, L. Z.*,Ma,Y. D., Tan, X., Frauenheim, T., Du, A. J., Smith, S. C., (2015):Structural and electronic properties of layered arsenic and antimony arsenide.J. Phys. Chem. C119, 6918–6922.
41. Jin, H., Dai, Y.*,Ma,Y. D., Li, X. R., Wei, W., Yu, L., Huang, B. B.(2015):The electronic and magnetic properties of transition-metal element doped three-dimensional topological Dirac semimetal in Cd3As2.J. Mater. Chem. C3, 3547-3551.
2014年及之前论文
40.Ma,Y. D., Dai, Y.*, Wei, W., Huang, B. B.,Whangbo, M. H.(2014):Strain-induced quantum spin Hall effect in methyl-substituted germanane GeCH3.Sci. Rep.4, 7297.
39.Ma,Y. D., Dai, Y.*, Yin, N., Jin, T., Huang, B. B.(2014):Ideal two-dimensional systems with a gain Rashba-type spin splitting SrFBiS2and BiOBiS2nanosheets.J. Mater. Chem. C2,8539-8545.
38.Ma,Y. D., Dai, Y.*, Li, X. R., Sun, Q. L., Huang, B. B.(2014):Prediction of two-dimensional materials with half-metallic Dirac cones: Ni2C18H12and Co2C18H12.Carbon73, 382-388.
37. Li, X. R., Dai, Y.*,Ma,Y. D., Huang, B. B.(2014):Electronic and magnetic properties of honeycomb transition metal monolayers: First-principles insights.Phys. Chem. Chem. Phys.16, 13383-13389.
36. Li, X. R., Dai, Y.*,Ma,Y. D., Han S. H., Huang, B. B.(2014):Graphene/g-C3N4bilayer: Considerable band gap opening and effective band structure engineering.Phys. Chem. Chem. Phys.16, 4230-4235.
35.Ma,Y. D., Dai, Y.*, Huang, B. B.(2014):Realization of controlling the band alignment via atomic substitution.Carbon69, 495-501.
34.Ma,Y. D., Dai, Y.*, Wei, W., Li, X. R., Huang, B. B.(2014):Emergence of electric polarity in BiTeX (X=Br and I) monolayers and the giant Rashba spin splitting.Phys. Chem. Chem. Phys.16, 17603-17609.
33.Ma,Y. D., Dai, Y.*, Lu, Y. B., Huang, B. B.(2014): Effective bandgap engineering in wrinkled germanane via tiny electric field.J. Mater. Chem. C2, 1125-1130.
32.Ma,Y. D., Dai, Y.*, Huang, B. B.(2013):Dirac cones in two-dimensional lattices: Janugraphene and chlorographene.J. Phys. Chem. Lett.4, 2471-2476.
31. Niu, C. W., Dai, Y.*, Guo, M.,Ma,Y. D., Huang, B. B., Whangbo,M.-H.(2013):Tunable topological surface and realization of insulating massive Dirac fermion state in Bi2Te2Se with co-substitution.J. Mater. Chem. C1, 114-120.
30.Ma,Y. D., Dai, Y.*, Yu, L., Niu, C. W., Huang, B. B.(2013):Engineering a topological phase transition in β-InSe via strain.New J. Phys.15, 073008.
29.Ma,Y. D., Dai, Y.*, Wei, W., Yu, L., Huang, B. B.(2013):Novel two-dimensional tetragonal monolayer: Metal-TCNQ networks.J. Phys. Chem. A117, 5171-5177.
28.Ma,Y. D., Dai, Y.*, Wei, W., Huang, B. B.(2013):Engineering intriguing electronic and magnetic properties in novel one-dimensional staircase-like metallocene wires.J. Mater. Chem. C1, 941-946.
27.Ma,Y. D., Dai, Y.*, Guo, M., Yu, L., Huang, B. B.(2013):Tunable electronic and dielectric behavior of GaS and GaSe monolayers.Phys. Chem. Chem. Phys.15, 7098-7105.
26.Ma,Y. D., Dai, Y.*, Li, X. R., Li, Z. J., Huang, B. B.(2013):First-principles study of one-dimensional sandwich wires [(P)5TM]∞ (TM=Ti, V, Cr, Mn, Fe, Co).J. Phys.: Condens. Matter.25, 395503.
25. Niu, C. W., Dai, Y.*,Ma,Y. D., Huang, B. B.(2013):Material realization of topological crystalline insulators: Role of strain and spin-orbit coupling.Mater. Express3, 159-165.
24. Sun, Q. L., Dai, Y.*,Ma,Y. D., Ma, X. C., Huang, B. B.(2013):Electronic and molecular behaviors of a novel ionic paramagnetic ruthenium (III) complex.Phys. Chem. Chem. Phys.15, 15392-15398.
23. Li, X. R.,Ma,Y. D., Dai, Y.*, Huang, B. B.(2013):Electronic and magnetic properties of one dimensional sandwich polymers: [(Ge5)TM]∞ (TM= Ti, V, Cr, Mn, Fe).J. Mater. Chem. C1, 4565-4569.
22.Ma,Y. D., Dai, Y.*, Guo, M., Niu, C. W., Zhu, Y. T., Huang, B. B.(2012):Evidence of the existence of magnetism in pristine VX2monolayers (X = S, Se) and their strain-induced tunable magnetic properties.ACS Nano6, 1695-1701.
21.Ma,Y. D., Dai, Y.*, Niu, C. W., Huang, B. B. (2012):Halogenated two-dimensional germanium: Candidate materials for being of quantum spin Hall state.J. Mater. Chem.22, 12587-12591.
20. Niu, C. W., Dai, Y.*, Zhu, Y. T.,Ma,Y. D., Yu, L., Han, S. H., Huang, B. B.(2012):Realization of tunable Dirac cone and insulating bulk states in topological insulators (Bi1-xSbx)2Te3.Sci. Rep.2, 976.
19. Wang, J. P., Wang, Z. Y., Huang, B. B.*,Ma,Y. D., Liu, Y. Y., Qin, X. Y., Zhang, X. Y., Dai, Y. (2012):Oxygen vacancy induced band-gap narrowing and enhanced visible light photocatalytic activity of ZnO.ACS Appl. Mater. Interfaces4, 4024-4030.
18.Ma,Y. D., Dai, Y,*, Guo, M., Huang, B. B.(2012):Graphene-diamond interface: Gap opening and electronic spin injection.Phys. Rev. B85, 235448.
17.Ma,Y. D., Dai, Y.*, Zhang, Z. K., Yu, L., Huang, B. B.(2012):Magnetic properties of phthalocyanine-based organometallic nanowire.Appl. Phys. Lett.101, 062405.
16.Ma,Y. D., Dai, Y.*, Guo, M., Niu, C. W., Huang, B. B.(2012):Intriguing behavior of halogenated two-dimensional tin.J. Phys. Chem. C116, 12977-12981.
15. Wei, W., Dai, Y.*, Guo, M.,Ma,Y. D., Huang, B. B. (2012):Atomic Pt and molecular H2O adsorptions on SrTiO3with and without Nb-doping: Electron trapping center and mediating roles of Pt in charge transfer from semiconductor to water.J. Solid State Chem.187, 64-69.
14. Lu, J. B., Dai, Y.*, Guo, M., Wei, W.,Ma,Y. D., Han, S. H., Huang, B. B. (2012):Structure and electronic properties and phase stabilities of the Cd(1-x)Zn(x)S solid solution in the range of 0≤x≤1.ChemPhysChem13, 147-154.
13.Ma,Y. D., Dai, Y.*, Guo, M., Niu, C. W., Zhu, Y. T., Huang, B. B.(2012):Electronic and magnetic properties of the two-dimensional C4H-type polymer with strain effects, intrinsic defects and foreign atom substitutions.Phys. Chem. Chem. Phys.14, 3651-3658.
12. Niu, C. W., Dai, Y.*, Zhu, Y. T., Lu, J. B.,Ma,Y. D., Huang, B. B.(2012):Topological phase transition and unexpected mass acquisition of Dirac fermion in TlBi(S1-xSex)2.Appl. Phys. Lett.101, 182101.
11. Niu, C. W., Dai, Y.*, Zhang, Z. K.,Ma,Y. D., Huang, B. B.(2012):Ferromagnetism and manipulation of topological surface states in Bi2Se3family by 2p light elements.Appl. Phys. Lett.100, 252410.
10.Ma,Y. D., Dai, Y.*, Guo, M., Niu, C. W., Huang, B. B.(2011):Graphene adhesion on MoS2monolayer: An ab initio study.Nanoscale3, 3883-3887.
9.Ma,Y. D., Dai, Y.*, Guo, M., Niu, C. W., Yu, L., Huang, B. B.(2011):Strain-induced magnetic transitions in half-fluorinated single layers of BN, GaN and graphene.Nanoscale3, 2301-2306.
8.Ma,Y. D., Dai, Y.*, Wei, W., Niu, C. W., Yu, L., Huang, B. B.(2011):First-principles study of the Graphene@MoSe2heterobilayers.J. Phys. Chem. C115, 20237-20241.
7.Ma,Y. D., Dai, Y.*, Guo, M., Niu, C. W., Yu, L., Huang, B. B.(2011):Magnetic properties of the semifluorinated and semihydrogenated 2D sheets of group-IV and III-V binary compounds.Appl. Surf. Sci.257, 7845-7850.
6.Ma,Y. D., Dai, Y.*, Huang, B. B.(2011):Magnetism in non-transition-metal doped CdS studied by density functional theory.Comp. Mater. Sci.50, 1661-1666.
5. Niu, C. W., Dai, Y.*, Yu, L., Guo, M.,Ma,Y. D., Huang, B. B.(2011):Quantum anomalous Hall effect in doped ternary chalcogenide topological insulators TlBiTe2and TlBiSe2.Appl. Phys. Lett.99, 142502.
4.Ma,Y. D., Dai, Y.*, Guo, M., Niu, C. W., Lu, J. B., Huang, B. B.(2011):Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe2, MoTe2and WS2monolayers.Phys. Chem. Chem. Phys. 13, 15546-15553.
3.Ma,Y. D., Dai, Y.*, Wei, W., Liu, X. H., Yu, L., Huang, B. B.(2011):Ag adsorption on Cd-terminated CdS (0001) and S-terminated CdS (000-1) surfaces: First-principles investigations.J. Solid State Chem.184, 747-752.
2. Niu, C. W., Dai, Y.*, Guo, M.,Ma,Y. D., Huang, B. B.(2011):Mn induced ferromagnetism and modulated topological surface states in Bi2Te3.Appl. Phys. Lett.98, 25250.
1.Ma,Y. D., Dai, Y.*, Jin, H., Huang, B. B.(2010):Study of ammonia molecule adsorbing on diamond (100) surface.Appl. Surf. Sci.256, 4136-4141.
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教授博士生导师硕士生导师性别:男
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当前位置:中文主页>>科学研究>>研究项目1.2017-2022, 齐鲁青年学者启动经费,
100万,主持
2.2019-2021,国家自然科学基金青年科学基金项目(11804190),
金属衣二维半导体材料的电子结构与光学性质研究,
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3. 2018-2021,山东省青年科技人才托举工程,
山东省科学技术协会,
15万,主持
4. 2019-2021,Discovery Projects 2019 (DP**),
Cost-efficient 2D heterostructures for solar overall water splitting,
Australian Research Council,
27万澳元,
(Dr Jingsan Xu; Dr Liangzhi Kou; Prof. Markus Antonietti; Prof. Yandong Ma)
https://rms.arc.gov.au/RMS/Report/Download/Report/a3f6be6e-33f7-4fb5-98a6-
7526aaa184cf/189
5.2019-2021,山东省自然科学基金青年科学基金项目(ZR2019QA011),
单层Janus 过渡金属硫族化物能谷性质调控的理论研究,
15万,主持
版权所有?山东大学 地址:中国山东省济南市山大南路27号 邮编:250100
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学历:博士研究生毕业
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入职时间:2017-09-20
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当前位置:中文主页>>科学研究>>学术会议报告Invited talk(邀请报告), Chinese Materials Conference 2019,10-14 July 2019,Chengdu,China
Invited talk(邀请报告), Flatlands Beyond Graphene 2018,3-7 September 2018, Leipzig, Germany
Invited talk(邀请报告),The 20th National Conference on Condensed Matter Theory and Statistical Physics,12-15 July 2018,Chengdu,China
Invited talk(邀请报告),11th International Conference on Computational Nanoscience and New Energy Materials,23-26 June 2018,Xinxiang,China
Co-Organiser (组织者),Tailor-Made 2D-Materials and Functional Devices,27 June- 1July 2016,Bremen,Germany
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毕业院校:山东大学
学历:博士研究生毕业
学位:博士
在职信息:在职
所在单位:物理学院
入职时间:2017-09-20
办公地点:知新楼扫描关注
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当前位置:中文主页>>科学研究>>其他单层Janus 过渡金属硫族化物能谷性质调控的理论研究,2019/04/26,2022/06/30,TMDs横向异质结构光生载流子的动力学性质和输运性质,2019/12/13,2021/10/31,二维新能源复合材料的计算与仿真-1,2019/11/21,2021/12/31,二维新能源复合材料的计算与仿真-4,2019/11/21,2021/12/31,二维新能源复合材料的计算与仿真,2019/11/21,2021/12/31,马衍东-山东省青年科技人才托举工程,2018/10/01,2020/12/31,金属衣二维半导体材料的电子结构与光学性质研究,2018/08/16,2021/12/31,二维晶体材料在电子和能谷电子器件中的应用探索,2018/06/28,2020/12/31,共8条1/1 首页上页下页尾页