施敏教授

美国国家工程院院士、中国工程院院士、中央研究院院士、台湾交通大学电子工程学系毫微米元件实验室教授，半导体物理与组件集成电路制程技术顾问。 　　

Sze, S. M. received his B.S. degree from the National Taiwan University, Taipei, the M.S. degree from the University of Washington, Seattle, and the Ph.D. degree from Stanford University, Stanford, all in electrical engineering. 　　

Dr. Sze is a UMC Chair Professor in the Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C. He was a member of the technical staff at AT&T Bell Laboratories from 1963 to 1989. His research work has been concerned with semiconductor devices, and he has made pioneering contributions to the device field, including the invention of the nonvolatile memory (1967), and the metal-semiconductor-metal structure for microwave BARITT and photodetector applications (1971). Since 1967, he has served as a Visiting Professor to many academic institutions including the National Chiao Tung University in 1968, the National Taiwan University in 1974, the National Sun Yat-Sen University in 1985, the University of Cambridge in 1986, and Stanford University in 1987. 　　

Prof. Sze was Editor of IEEE Electron Device Letters from 1986 to 1990. He has authored or co-authored over 100 articles. He is a contributor to 12 books, the editor of 7 books, and the author of Physics of Semiconductor Devices (Wiley 1969, 2nd ed., 1981) and Semiconductor Devices - Physics and Technology (Wiley, 1985). 　　Prof. Sze is a Life Member of the Institute of Chinese Engineers, and he received the IEEE J. J. Ebers Awards in 1991. He has been elected Fellow of IEEE, member of the Academia Sinica, and member of the U.S. Academy of Engineering.

B. Books
Authored Books
F Physics of Semiconductor Devices, 812 pages, Wiley, New York, 1969.
F Physics of Semiconductor Devices, 2nd Ed., 868 pages, Wiley, New York.
F Semiconductor Devices: Physics and Technology, 522 pages, Wiley, New York, 1985. Edited Books
F VLSI Technology, 654 pages, McGraw Hill, New York, 1983.
F VLSI Technology, 2nd Ed., 672 pages, McGraw Hill, New York, 1988.
F High Speed Semiconductor Devices, 641 pages, Wiley, New York, 1990.
F Semiconductor Devices: Pioneering Papers, 1003 pages, World Scientific, Singapore, 1991. F Semiconductor Sensors, 550 pages, Wiley, New York, 1994.
F ULSI Technology, with C. Y. Chang, 670 pages, McGraw Hill, New York, 1996.
F Modern Semiconductor Device Physics, 580 pages, Wiley Interscience, New York, 1997.