胡光喜
微纳系统中心
职称：副研究员
职务：信息学院工会主席
电子邮件：gxhu@fudan.edu.cn
办公地点：科学楼416办公室
电话：
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研究兴趣
学术任职
获奖情况
学习工作经历
授课情况
代表性论文或专著

半导体器件的建模与仿真
小尺寸半导体器件物理
量子统计物理



2000年至2003年 复旦大学学习，获博士学位
1986年至1990年 西安交通大学学习，获硕士学位
1982年至1986年 安徽大学学习，获学士学位


本科课程：《半导体器件原理》、《近代物理基础》、《大学物理B（上）》、《大学物理B（下）》
研究生课程： 《半导体器件物理》、《纳米尺度半导体器件物理》、《小尺寸MOS器件模型与仿真》


1，Guangxi Hu*, Ping Xiang, Zhihao Ding, Ran Liu, Lingli Wang, and Ting-Ao Tang, “Analytical Models for Electric Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Surrounding-Gate Transistors,” IEEE Transactions on Electron Devices, Vol. 61, No. 3, 688-695 (2014).
2，Guangxi Hu*, Shuyan Hu, Ran Liu, Lingli Wang, Xing Zhou, and Ting-Ao Tang, “Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor”, IEEE Transactions on Electron Devices, Vol.60, No. 7, 2410-2414 (2013).
3，Guangxi Hu*, Jinglun Gu, Shuyan Hu, Ying Ding, Ran Liu, and Ting-Ao Tang, “A Unified Carrier Transport Model for the Nanoscale Surrounding-Gate MOSFET Comprising Quantum Mechanical Effects”IEEE Trans. Electron Devices, Vol.58, No. 7, 1830-1836 (2011).
4，Guangxi Hu^*, Haisheng Qian, Shuyan Hu, Ran Liu, Lirong Zheng , and Xing Zhou, “Analytical Models for GaN-Based Heterostructure-Free Normally-Off FinFET,” Japanese Journal of Applied Physics, Vol. 56, 021002 (2017).
5，Shuyan Hu, Guangxi Hu*, Lingli Wang, Ran Liu, and Lirong Zheng, “Quasi-ballistic transport model for top- and back-gated graphene nanoribbon field-effect transistors,” Japanese Journal of Applied Physics, Vol. 55, 04EK01 (2016).
6，Guangxi Hu*, Shuyan Hu, Jianhua Feng, Ran Liu, Lingli Wang, and Lirong Zheng, “Analytical Models for Channel Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Triple-Gate FinFETs,” Microelectronics Journal, Vol. 50, 60-65 (2016).
7，Ping Xiang, Enyao Gu, Guangxi Hu*, Ran Liu, Lingli Wang, and Xing Zhou, “Analytical Models for Channel Potential, Drain Current, and Subthreshold Swing of Short-Channel Triple-Gate FinFETs,” Far East Journal of Electronics and Communications, Vol. 12, No. 1, 39-48 (2014).
8，Zhihao Ding, Guangxi Hu*, Ran Liu, Lingli Wang, Shuyan Hu, and Xing Zhou, “Analytical Models for Electric Potential, Threshold Voltage and Drain Current of Long-Channel Junctionless Double-Gate Transistors”, Journal of the Korean Physical Society, Vol. 62, No. 8, 1188-1193 (2013).
9，Guanghui Mei, Peicheng Li, Guangxi Hu^*, Ran Liu, Lingli Wang, and Tingao Tang, “Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs”, Microelectronics Journal, Vol. 43, No. 11, 894-897 (2012).
10，Peicheng Li, Guanghui Mei, Guangxi Hu*, Lingli Wang, Ran Liu, and Tingao Tang, “Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study”, Communications in Theoretical Physics, Vol. 58, No. 1, 171-174 (2012).
11，Peicheng Li, Guangxi Hu^*, Ran Liu, and Tingao Tang, “Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs”, Microelectronics Journal, Vol. 42, No. 10, 1164-1168 (2011).
12，Guanghui Mei, Guangxi Hu^*, Shuyan Hu, Jinglun Gu, Ran Liu and Tingao Tang，“Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal–Oxide–Semiconductor Field-Effect Transistors”, Japanese Journal of Applied Physics, Vol. 50, No. 7, 074202 (2011).
13，Zhihao Ding, Guangxi Hu^*, Jinglun Gu, Ran Liu, Lingli Wang and Tingao Tang，“An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs”，Microelectronics Journal, Vol. 42, No. 3, 515-519 (2011) (Corresponding Author)
14，Guang-Xi Hu*, Ling-Li Wang, Ran Liu, Ting-Ao Tang, and Zhi-Jun Qiu, “Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide- Semiconductor Field-Effect Transistors”, Communications in Theoretical Physics, Vol. 54, No. 4, 763-767 (2010).
15，Guang-Xi Hu*, Ran Liu, Zhi-Jun Qiu, Ling-Li Wang, and Ting-Ao Tang, “Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors”, Japanese Journal of Applied Physics, Vol. 49, No. 3, 034001 (2010).
16，Guang-Xi Hu*, Ran Liu, Ting-Ao Tang, and Ling-Li Wang, “Analytic Investigation on the Threshold Voltage of Fully-Depleted Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors”, Journal of the Korean Physical Society, Vol. 52, No. 6, 1909-1912 (2008).
17，Guang-Xi Hu*，Ran Liu, Ting-Ao Tang, Shi-Jin Ding, and Ling-Li Wang, “Theory of Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect-Transistors”, Japanese Journal of Applied Physics, Vol. 46, No. 4A, 1437-1440 (2007).
18，Guang-Xi Hu* and Ting-Ao Tang, “Some Physical Properties of a Surrounding-Gate MOSFET with Undoped Body”, Journal of the Korean Physical Society, Vol. 49, No. 2, 642-645 (2006).
19，Guang-Xi Hu*, Xian-Xi Dai, “Functional Integral Approach to the Transition Temperature of Attractive Interacting Bose Gas in Traps”，Chinese Physics Letters, Vol. 21, No. 7, 1201-1204 (2004).
20，Guang-Xi Hu*, Xian-Xi Dai, Ji-Xin Dai, and William E. Evenson, “Functional Integral Approach to Transition Temperature of a Homogeneous Imperfect Bose Gas”， Communications in Theoretical Physics, Vol. 41, No. 6, 895-898 (2004).
21，Guang-Xi Hu*, Ji-Ping Ye, Xian-Xi Dai, Ji-Xin Dai, and William E. Evenson, “Critical Properties and Distributions of Two-dimensional Bose-Einstein Condensation”, International Journal of Modern Physics B, Vol. 18, No. 1, 103-114 (2004).
22，Hu Guang-Xi, Ye Ji-Ping, Dai Xian-Xi*, Dai Ji-Xin, and William E. Evenson, “Quantitative and Qualitative Analysis of Bose-Einstein Condensation in Harmonic Traps”，Communications in Theoretical Physics, Vol. 39, No. 1, 49-53 (2003).
23，G.-X. Hu, X.-X. Dai*, J.-X. Dai, and W. E. Evenson, “Transition Temperatures of Bose-Einstein condensation in traps”. Journal of Low Temperature Physics, Vol. 133, Nos. 3/4, 239-249 (2003).
24，Ji-Ping Ye, Guang-Xi Hu, Su-Qiao An, Xian-Xi Dai*, Ji-Xin Dai, and William E. Evenson, “The Spatial and Momentum Distribution of Bose-Einstein Condensation in Harmonic Traps”，Physica A, Vol. 323, 357-369 (2003).


Conference Publications
1， Haisheng Qian, Guangxi Hu*, Laigui Hu, Xing Zhou, Ran Liu, and Lirong Zheng, “Analytical Models for Channel Potential and Drain Current in AlGaN/GaN HEMT Devices”, Proceedings of the 11^th IEEE International Conference on ASIC, Guiyang, P. R. China, 2017.10.26-10.28.
2， Haisheng Qian, Guangxi Hu*, Ran Liu, Lirong Zheng, and Xing Zhou, “A Threshold Voltage Model for GaN-Based Heterostructure-Free Normally-Off FinFET”, Proceedings of International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp. 1065-1067, Hangzhou, P. R. China, 2016.10.25-10.28.
3， Guangxi Hu*, Shuyan Hu, Jianhua Feng, Ran Liu, Lingli Wang, and Lirong Zheng, “Analytical Models for Threshold Voltage, Drain Induced Barrier Lowering Effect of Junctionless Triple-Gate FinFETs”, Proceedings of the 10^th IEEE International Conference on ASIC, pp. 1151-1154, Chengdu, P. R. China, 2015.11.3-11.6. (EI)
4， Shuyan Hu, Guangxi Hu*, Lingli Wang, Ran Liu and Lirong Zheng, “A Quasi-ballistic Transport Model for Top- and Back-gated Graphene Nanoribbon Field-effect Transistors”, Proceedings on International Conference on Solid State Devices and Materials (SSDM), pp. 336-337, Sapporo, Japan, 2015.9.27-9.30.
5， Guangxi Hu*, Shuyan Hu, Peicheng Li, Ran Liu, Lingli Wang, and Xing Zhou, “Analytic Models for Subthreshold Channel Potential and Threshold Voltage of the Schottky-Barrier Surrounding-Gate MOSFETs”, Proceedings of International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 1425-1427, Guilin, P. R. China, 2014.10.28-11.1. (EI)
6， Ping Xiang, Zhihao Ding, Guangxi Hu*, Hui Chol Ri, Ran Liu，Lingli Wang, and Xing Zhou, “Analytic Models for Electric Potential and Subthreshold Swing of the Dual-Material Double-Gate MOSFET”, Proceedings of the 9^th IEEE International Conference on ASIC, pp. 1008-1011, Shenzhen, P. R. China, 2013.10.28-10.31. (EI)
7， Ping Xiang, Guangxi Hu*, Guanghui Mei, Ran Liu, Lingli Wang, and Tingao Tang, “Effective Radius Models of Nanoscale Elliptical Surrounding-Gate MOSFETs”, Proceedings of International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp. 730-732, Xi’an, P. R. China, 2012.10.29-11.1. (EI)
8， Peicheng Li, Guanghui Mei, Guangxi Hu^*, Ran Liu, and Tingao Tang, “Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study”, Proceedings of the 9^th IEEE International Conference on ASIC, pp. 792-795, Xiamen, P. R. China, 2011.10.25-10.28. (EI)
9， Guanghui Mei, Peicheng Li, Guangxi H^u*, Ran Liu, and Tingao Tang, “Quantum Mechanical Effects on the Threshold Voltage of the Evenly Doped Surrounding-Gate MOSFETs”, Proceedings of the 9^th IEEE International Conference on ASIC, pp. 591-593, Xiamen, P. R. China, 2011.10.25-10.28. (EI)
10， Guanghui Mei, Guangxi H^u*, Peicheng Li, Jinglun Gu, Ran Liu and Tingao Tang, “A Threshold Voltage Model for the Surrounding-Gate MOSFETs”, Proceedings of International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp. 1919-1921, Shanghai, P. R. China, 2010.11.1-11.4. (EI)
11， Peicheng Li, Guangxi Hu^*, Guanghui Mei, Ran Liu, Yi Jiang and Tingao Tang, “An Analytic Threshold Voltage Model for the Double-Gate Schottky-Barrier Source/Drain MOSFETs”, Proceedings of International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp. 1922-1924, Shanghai, P. R. China, 2010.11.1-11.4. (EI)
12， Zhihao Ding, Guangxi Hu^*, Jinglun Gu, Ran Liu, Lingli Wang, and Tingao Tang, “An Analytical Model for the Subthreshold Swing of Double-Gate MOSFETs”, Proceedings of the 2010 International Workshop on Junction Technology, pp. 228-231, Shanghai, P. R. China, 2010.5.10-5.11. (EI)
13， Guang-Xi Hu*, Ran Liu, Ting-Ao Tang, Ling-Li Wang, and Zhi-Jun Qiu “Quantum-Mechanical Study on the Electron Effective Mobility of Surrounding-Gate nMOSFETs”, Proceedings of the 8^th IEEE International Conference on ASIC, pp. 792-795, Changsha, P. R. China, 2009.10.20-10.23. ( EI)
14， Guang-Xi Hu*, Pei-Cheng Li, Guang-Hui Mei, Hai-Ying Yang, Ling-Li Wang, and Ran Liu, “Some Physical Properties of Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect-Transistors”, Proceedings of The 6th International New Exploratory Technologies Conference, pp. 143-148 Shanghai, P. R. China, 2009.