朱自强，信息科学技术学院院长，“紫江学者”特聘教授、首批终身教授。1983年毕业于复旦大学物理系，1984年至1990年在日本国立静冈大学和通产省电子技术综合研究所先后获工学硕士和博士学位，1990年至1992年在日本住友金属矿山株式会社电子材料研究所，1992年至1998年在日本广岛大学工学部和东北大学金属材料研究所从事半导体材料与器件的教学与研究工作，期间曾先后赴英国Heriot-Watt大学和美国加州大学圣地亚哥分校进行访问研究。1998年底回国，任中国科学院上海冶金所研究员、博导，2001年受聘华东师大教授。

　　朱自强教授多年来一直致力于半导体领域的研究，尤其在II－VI族半导体化合物材料与器件方面的研究成果得到国际同行的认可。在国际SCI学术刊物上发表论文100多篇，350次以上被SCI论文引用，在日本、英国和德国召开的国际著名学术会议上作特邀报告3次，曾在日本参与主办1997年半导体量子结构与光电子器件应用国际会议，任会议秘书长，2004年筹办第5届国际固体薄膜会议。曾获1991年日本住友研究成果奖、第七届日本原田奖等。1999年入选中国科学院“百人计划”，获国家引进海外杰出人才专项基金和上海市引进海外高层次人才一等奖，2000年获得国家杰出青年科学基金资助。2003年获得上海市第五届“侨界十杰”称号。

发表论文（2001年起）
30. Study on Infrared Transmission Spectrum of Sildefile Citrate Mixed in Traditional Chinese Medicine，Yiling Wang, Guiliang Chen, Ziqiang Zhu, Jianzhong Zhu, Wei Lu，2003，International Journal of Infrared and Millimeter Waves 24(7), 1177-1185
29. Chitosan/Prussian Blue-based Biosensors, YT Wang, JZ Zhu, ZQ Zhu et al., 2003, Measurement Science and Technology，14:831-6
28. Amperometric biosensors based on enzyme immobilized in chitosan film on a Prussian Blue-modified electrode，ZQ Zhu et al., Accepted by IEEE Sensors Journal
27. Electronic properties and field emission of carbon nanotube films treated by hydrogen plasma, K Yu, ZQ Zhu et al., Accepted by Applied Physics A.26. Field emission characteristics of nodular carbon nanotubes, Qiong Li, Jingfang Xu, Ke Yu, Ziqiang Zhu et al., J.Vac.Sci.Technol.B 21(4), Jul/Aug 2003: 1684-1687.
25. Field emission effect of carbon nanotube film treated by hydrogen plasma, K Yu, ZQ Zhu et al.,Chemical Physics Letter（2003）.
24. Study on Low Voltage Actuated MEMS RF Capacitive Switches, FM Guo, ZQ Zhuet al., Accepted by Sensors and Actuators.
23. 悬臂式RF MEMS 开关的设计与研制，郭方敏，赖宗声，朱自强等，
22. 相位连续可调毫米波MEMS移相器的研制，郭方敏， 朱守正，魏华征，郑莹，朱荣锦，忻佩胜，朱自强等，华东师范大学学报
21. 基于多孔硅的共平面波导制备及传输特性研究，龙永福，朱自强等，微电子学，已录用
20. 压控式MEMS开关阵列—移相器可动薄膜的研究，郭方敏，赖宗声，朱自强等，半导体学报，
19. 高电容比射频/微波MEMS膜开关的理论分析和数值模拟，龙永福，朱自强等，微波学报，
18. A Multifunctional Sensor-Chip based on Micromachined Chamber Array，JZ Zhu, ZQ Zhu et al., 2002, Sensors and Materials, 14:209-218
17. Planar Amperometric Glucose Sensors Based on Glucose Oxidase Immobilized by Chitosan Film on Prussian Blue Layer, JZ Zhu, ZQ Zhu et al., 2002, Sensors (ISSN 1424-8220), 2:121-130
16. Microfabrication & Characterization of Thick Porous Silicon Layers, SZ You, YF Long, ZQ Zhu et al., 2002, MEMS 2002 Workshop Digest, 199-202.
15. Oxidized Porous Silicon Thick Layers for RF/Microwave IC Applications，YF Long, ZQ Zhu et al., 2002, Proceedings of IEEE Sensors 2002.
14. The Study of MEMS Millimeter Wave Phase Shifter, FM Guo, ZS Lai, ZQ Zhu et al., 2002, Proceedings of 2002 IEEE Radio and Wireless Conference, 273-275.
13. A Low Voltage Actuated Cantilever Arm RF Switch, FM Guo, C Wang, RJ Zhu, ZS Lai, ZQ Zhu, 2002, MEMS 2002 Workshop Digest, P773-776
12. The design of adding beat reflective emitter coating on the cold region of infrared thermopiles, YY Liu, DX Shen, ZQ Zhu, 2002, IEEE Xplore@ 458-462.
11. 射频/微波MEMS Shunt开关的开启时间研究，龙永福，朱自强等，电子学报， 2002, 30(8)1204-1206
10. 用于微波/射频集成电路的一种新型低损耗介质----多孔硅及氧化多孔硅厚膜，龙永福，朱自强等，2002，半导体学报， 10（6）609-613
9. 射频微机械开关的计算机辅助设计，魏华征，郭方敏，赖宗声，朱守正，朱自强等，2002，半导体学报， 23（9）947-950。
8. MEMS移相器及其在微型通信系统中的应用，卿健，石艳玲，赖宗声，朱自强，2002，微电子学， 32（4）241-244。
7. 高阻硅基铝硅合金弹性膜MEMS相移器，石艳玲，卿健，忻佩胜，朱自强，赖宗声，2002, 半导体学报,.23 (9) 972-975。
6. Improve microwave performance on low-resistivity Si substrates by introducing an oxidized porous Si interlayer, International Conference on Sensor Technology (ISTC 2001), Proceedings of SPIE, 4557, 447-452
5. The study of surface micromachined miniature RF switch, FM Guo, ZS Lai, ZQ Zhu et al., International Conference on Sensor Technology (ISTC 2001), Proceedings of SPIE, 4414, 239-241
4. Effect dielectric constant measurement for micromachined transmission line with multilane method, International Conference on Sensor Technology, SZ You, YL Shi, ZS Lai, ZQ Zhu, 2001, International Conference on Sensor Technology (ISTC 2001), Proceedings of SPIE, 4414, 464-467
3. Theoretical Study of Surface MEMS RF Switch Structure, M Jia, FM Guo, ZQ Zhu et al., International Conference on Sensor Technology (ISTC 2001), Proceedings of SPIE, 4414,242.
2. 铝硅合金膜在MEMS电容式开关中的应用，忻佩胜，丁玲，石艳玲，朱自强，赖宗声，2001，半导体技术，26（12）75-77
1. 硅基红外热堆中热电偶尺寸和对数对探测性能的影响， 李志怀，冯明，刘月英，沈德新，卢建国，朱自强，2001，半导体学报，22（10）1287-1291。

专利（2002年起）
1) 一种多孔硅的阳极氧化表面处理技术（发明专利申请号：02112391.8）
2) 一种多孔硅的阴极还原表面处理技术（发明专利申请号：02112389.6）
3) 承载高集成度cDNA微阵列的多孔硅衬底的制备方法（发明专利申请号：02145348.9）
4) 微电子机械毫米波压控相移器的制造方法（发明专利申请号：02111685.7）
5) 电可调光衰减器（发明专利申请号：02288433.5）
6) 掺饵氧化锌近红外光源（发明专利申请号：02137628.X）
7）接触式MEMS开关寿命测试的方法和仪器（发明专利申请号：03116999.6）
8） 用红外光谱检测中药中化学药物的方法（发明专利申请号：003128829.4）

Publication list（before 2000）

Regular papers in SCI journals:
99. “Compensation mechanism of GaN:As by photoluminesence spectroscopy”, Journal of Applied Physics, Oct. 2000.
98. Jin SR; Ramsteiner M; Grahn HT; Ploog KH; Zhu ZQ; Shen DX; Li AZ “Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition”, , Journal of Crystal Growth, 2000, Vol 212, Iss 1-2, pp 56-60.
97. Ko HJ; Chen YF; Zhu Z; Yao T; Kobayashi I; Uchiki H, “Photoluminescence properties of ZnO epilayers grown on CaF2(111) by plasma assisted molecular beam epitaxy”, Applied Physics Letters, 2000, Vol 76, Iss 14, pp 1905-1907.
96. Ko HJ; Chen YF; Zhu Z; Hanada T; Yao T, “Effects of a low-temperature buffer layer on structural properties of ZnO epilayers grown on (111)CaF2 by two-step MBE”, Journal of Crystal Growth, 2000, Vol 208, Iss 1-4, pp 389-394.
95. Jin SR et. al., “Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures”, Journal of Applied Physics, Oct. 2000
94. “ Interactions and oscillations in quantum dots”, Journal of Physics: Condensed Matter, (1999) 11:2337-2339.
93. H.P. Xin, K.L. Kavanagh, Z.Q. Zhu, and C.W. Tu, “Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells”, Applied Physics Letters, (1999) 74:2337-2339.
92. Xin HP; Kavanagh KL; Zhu ZQ; Tu CW , “Quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells grown by gas-source molecular-beam epitaxy”, Journal of Vacuum Science & Technology B, 1999, Vol 17, Iss 4, pp 1649-1653
91. M.W. Cho, J.H. Chang, D.M. Bagnall, K.W. Koh, S.Saeki, K.T. Park, Z. Zhu, K. Hiraga, and T. Yao, “Growth and Characterization of beryllium-based II-VI compounds”, J. Appl. Phys. (1999) 85, Iss 1, pp 512-517
90. Kurtz E; Sekiguchi T; Zhu Z; Yao T; Shen JX; Oka Y; Shen MY; Goto T, “Growth and time-resolved photoluminescence study of self-organized CdSe quantum dots in ZnSe”, Superlattice and Microstructures, 1999, Vol 25, Iss 1-2, pp 119-125 .
89. Ko HJ; Chen YF; Ko JM; Hanada T; Zhu Z; Fukuda T; Yao T, “ Two-step MBE growth of ZnO layers on electron beam exposed (111)CaF2”, Journal of Crystal Growth, 1999, Vol 207, Iss 1-2, pp 87-94
88. Zhu Ziqiang, Li Aizhen, “Molecular beam epitaxy of ZnO for photonic applications”(inChinese), Journal of Functional Materials and Devices, 1999, Vol. 5, No.3, pp161-168.
87. Cho, M.W.; Koh, K.W.; Bagnall, D.M.; Zhu, Z.; Yao, “ ZnSe heteroepitaxy on GaAs(110) substrate”, T, Journal of Electronic Materials, 1999, vol.27, (no.2):85-8.
86. Tomasini, P.; Arai, K.; Lu, F.; Zhu, Z.Q.; Sekiguchi, M.; Suezawa, T.; Yao, T.; Shen, M.Y.; Goto, T.; Yasuda, T, Segawa, Y., 1998, “Orientation dependence of strained ZnSe/ZnS (h11) single quantum well luminescence”, Journal of Applied Physics, vol.83, (no.8):4272-8.
85. Jung, H.D.; Kumagai, N.; Hanada, T.; Zhu, Z.; Yao, T.; Yasuda, T, 1998, “Nitridation processes on GaAs (001) surfaces: Optical, structural, and chemical analysis”, Journal of Applied Physics, vol.83, (no.10):5497-503.
84. Chen, Y.; Zhu, Z.; Bagnall, D.M.; Sekiguchi, T.; Yao, T., “ZnO quantum pyramids grown on c-plane sapphire by plasma-assisted molecular beam epitaxy” Journal of Crystal Growth, 1998, vol.184-185:269-73.
83. Arai, K.; Zhu, Z.Q.; Sekiguchi, T.; Yasuda, T.; Lu, F.; Kuroda, N.; Segawa, Y.; Yao, T., “ Photoluminescence and cathodoluminescence studies of ZnSe quantum structures embedded in ZnS”, Journal of Crystal Growth, 1998, vol.184-185:254-8.
82. Kurtz, E.; Jung, H.D.; Hanada, T.; Zhu, Z.; Sekiguchi, T.; Yao, T., “Self-organized CdSe/ZnSe quantum dots on a ZnSe (111)A surface”, Journal of Crystal Growth, 1998, vol.184-185:242-7.
81. Jung, H.D.; Kumagai, N.; Hanada, T.; Kurtz, E.; Zhu, Z.; Yao, T, “Investigation of the surfactant effect of Sn in ZnSe by reflectance difference spectroscopy and reflection high-energy electron diffraction”, Journal of Crystal Growth, 1998, vol.184-185:223-7.
80. Lu, F.; Kimura, K.; Wang, S.Q.; Zhu, Z.Q.; Yao, T., “Interfacial properties of ZnSe/GaAs heterovalent interfaces”, Journal of Crystal Growth, 1998, vol.184-185:183-7.
79. Koh, K.W.; Cho, M.W.; Zhu, Z.; Hanada, T.; Yoo, K.H.; Isshiki, M.; Yao, T., “Growth of ZnSe on misoriented GaAs(110) surface by molecular beam epitaxy”, Journal of Crystal Growth, 1998, vol.184-185:46-50.
78. Koh, K.W.; Cho, M.W.; Zhu, Z.; Hanada, T.; Isshiki, M.; Yao, T., “Growth of ZnSe on GaAs(110) surfaces by molecular beam epitaxy”, Journal of Crystal Growth, 1998, vol.186, (no.4):528-34.
77. Kumagai, N.; Jung, H.D.; Hanada, T.; Zhu, Z.; Yasuda, T.; Kimura, K.; Lee, S.D.; Jeon, M.H.; Park, H.S.; Kim, T.J.; Yao, T., “Non-destructive measurement of electron concentration in n-ZnSe by means of reflectance difference spectroscopy”, Journal of Crystal Growth, 1998, vol.184-185:505-9.
76. Tomasini, P.; Arai, K.; Lu, F.; Cho, M.W.; Zhu, Z.Q.; Yao, T.; Wu, Y.H.; Sekiguchi, T.; Suezawa, M.; Shen, M.Y.; Goto, T., “Luminescence properties of ZnSe/ZnS(h11)A low dimensional structures”, Journal of Crystal Growth, 1998, vol.184-185:343-6.
75. Tomasini, P.; Arai, K.; Lu, F.; Zhu, Z.Q.; Sekiguchi, T.; Yao, T.; Shen, M.Y.; Goto, T., “Localization and thermal escape of excitons in ultrathin ZnSe/ZnS single quantum wells linked to interfacial ZnSe quantum slabs”, Journal of Applied Physics, 1998, vol.83, (no.11):6028-33.
74. Shen, M.Y.; Goto, T.; Kurtz, E.; Zhu, Z.; Yao, Y., “Photoluminescence properties of single CdSe quantum dots in ZnSe obtained by self-organized growth”, Journal of Physics: Condensed Matter, 1998, vol.10, (no.10):L171-6.
73. Bagnall, D.M.; Chen, Y.F.; Shen, M.Y.; Zhu, Z.; Goto, T.; Yao, T., “Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE”,Journal of Crystal Growth, 1998, vol.184-185:605-9.
72. Bagnall, D.M.; Chen, Y.F.; Zhu, Z.; Yao, T.; Shen, M.Y.; Yao, T., “High temperature excitonic stimulated emission from ZnO epitaxial layers”, Applied Physics Letters, 1998, vol.73, (no.8):1038-40.
71. Totsuka, H.; Kurtz, E.; Hanada, T.; Zhu, Z.; Yao, T., “The effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100)”, Applied Surface Science, 1998, vol.130-132:742-6.
70. Kurtz, E.; Jung, H.D.; Hanada, T.; Zhu, Z.; Yao, T., “Properties of self-organized CdSe quantum dots on an atomically flat (111)A ZnSe surface”, Applied Surface Science, 1998, vol.130-132:755-9
69. Jia-Lin Zhu, Shaofeng Zhu, Ziqiang Zhu, Y. Kawazoe and Y. Yao, “Binding and overlap function of incompletely confined excitons in quantum dots”, Journal of Physics: Condensed Matter, 1998, vol.10:L583-7.
68. Zhu JL; Zhu Z; Kawazoe Y; Yao T, “Spin oscillation and its reduction in a quantum dot”, Physical Review B-Condensed Matter, 1998, Nov.15, Vol 58, Iss 20, pp 13755-13761.
67. Jia-Lin Zhu, Shaofeng Zhu, Ziqiang Zhu, Y. Kawazoe and Y. Yao, “Exact spectra and spin oscillations for two electrons in quantum dots”, Physics Letters A, 1998, vol. 246, 157-162
66. Shouqi Wang, Fang Lu, Ziqiang Zhu, T. Sekiguchi, H. Ogushi, T.Yao, “Compensation levels in p-type ZnSe:N by optical deep-level transient spectroscopy”,Physical Review B-Condensed Matter, 1998, Ocb.15, Vol 58, pp 10502-10509
65. Y.F. Chen, D.M. Bagnall, H.J. Koh, K.T. Park, K. Hiraga, Z.Q. Zhu, and T.Yao, “Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization”, J. Appl. Phys. 1998, Vol.84, 3912-3918.
64. Narusawa, T.; Nishiyama, F.; Zhu, Z.; Yao, T., “(110) substrates for ZnSe on GaAs heteroepitaxy”, Japanese Journal of Applied Physics, Part 2 (Letters), 1997, vol.36, (no.1A-B):L12-14.
63. Wang, J.; Zhu, Z.; Hiraga, K.; Yao, T., “Hot plasma chemical vapor deposition of GaN on GaAs(100) substrate”, Journal of Electronic Materials, 1997, vol.26, (no.3):232-6.
62. F. Lu; S. Wang; H. Jung; Z. Zhu, T. Yao, “Photoinduced admittance spectroscopy to detect the shallow electron traps in nitrogen-doped highly compensated ZnSe”, Journal of Applied Physics, 1997, vol.81, (no.5):2425-8.
61. Jung, H.D.; Song, C.D.; Wang, S.Q.; Arai, K.; Wu, Y.H.; Zhu, Z.; Yao, T.; Katayama, H., “Carrier concentration enhancement of p-type ZnSe and ZnS by co-doping with active nitrogen and tellurium by using a delta -doping technique”, Applied Physics Letters, 1997, vol.70, (no.9):1143-5.
60. Bagnall, D.M.; Chen, Y.F.; Zhu, Z.; Yao, T.; Shen, M.Y.; Goto, T., “Optically pumped lasing of ZnO at room temperature”, Applied Physics Letters, 1997, vol.70, (no.17):2230-2.
59. Cho, M.W.; Koh, K.W.; Morikawa, K.; Arai, K.; Jung, H.D.; Zhu, Z; Yao, T., “Surface treatment of ZnSe substrate and homoepitaxy of ZnSe”, Journal of Electronic Materials, 1997, vol.26, (no.5):423-8.
58. Wang, J.; Zhu, Z.; Park, K.; Hiraga, K.; Yao, T., “Low-temperature growth of GaN films on GaAs(100) substrates by hot plasma chemical vapor deposition”, Journal of Crystal Growth, 1997, vol.177, (no.3-4):181-4.
57. Wang, S.Q.; Lu, F.; Jung, H.D.; Song, C.D.; Zhu, Z.Q.; Okushi, H.; Cavenett, B.C.; Yao, T., “Electronic states in ZnSe/ZnTe type-II superlattice studied by capacitance transient spectroscopy”, Journal of Applied Physics, 1997, vol.82, (no.7):3402-7.
56. (invited) Zhu, Z.; Kurtz, E.; Arai, K.; Chen, Y.F.; Bagnall, D.M.; Tomashini, P.; Lu, F.; Sekiguchi, T.; Yao, T.; Yasuda, T.; Segawa, Y., “Self-organized growth of II-VI wide bandgap quantum dot structures”, Physica Status Solidi B, 1997, vol.202, (no.2):827-33.
55. (invited) Yao, T.; Lu, F.; Cho, M.W.; Koh, K.W.; Zhu, Z.; Kuo, L.H.; Yasuda, T.; Ohtake, A.; Miwa, S.; Kimura, K., “ Heterovalent ZnSe/GaAs interfaces”, Physica Status Solidi B, 1997 vol.202, (no.2):657-68.
54. Jung, H.D.; Kumagai, N.; Hanada, T.; Zhu, Z.; Yao, T.; Yasuda, T.; Kimura, K., “In situ reflectance difference spectroscopy and reflection high-energy electron diffraction observation of nitridation processes on GaAs(001) surfaces”, Journal of Applied Physics, 1997, vol.82, (no.9):4684-6.
53. X. Wang, Z.M. Jiang, H.J. Zhu; F. Lu; D. Huang, X. Liu, C. Hu, Y. Chen, Z. Zhu, T. Yao., “Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy”, Applied Physics Letters, 1997, vol.71, (no.24):3543-5.
52. Y. Chen, D.M. Bagnall, Z. Zhu, T. Sekiuchi, K. Park, K. Hiraga, T. Yao, S. Koyama, M.Y. Shen, T. Goto, “Growth of ZnO single crystal thin films on c-plane (0001) sapphire by plasma enhanced molecular beam epitaxy”, Journal of Crystal Growth, 1997, vol.181, (no.1-2):165-9.
51. E. Kurtz, H.D. Jung, T. Hanada, Z.Q. Zhu, T. Sekiguchi, and T. Yao, “Growth and photoluminescence properties of self-organized CdSe quantum dots on ZnSe(111)A surfaces”, Nonlinear Optics, 1997, vol.18 , (no.2-4), 13-8.
50. P. Tomasini, K. Arai, F. Lu, Z.Q. Zhu, T. Sekiguchi, T. Yao, M.Y. Shen, T. Goto, T. Yasuda, “Optical properties of ZnSe quantum wires grown using high index substrates”, Nonlinear Optics, 1997, vol.18 , (no.2-4), 135-8.
49. J.L. Zhu, Z.Q. Li, Z. Zhu, Y. Kawazoe, and T. Yao, “Single-ion, dot-size and dot-shape effects on two-electron spectra in quantum dots”, Nonlinear Optics, 1997, vol.18 , (no.2-4), 109-12.
48. D.M. Bagnall, Y.F. Chen, Z.Q. Zhu, N. Kuroda, and T. Yao, “Room temperature lasing of ZnO thin films grown by MBE”, Nonlinear Optics, 1997, vol.18 , (no.2-4), 163-6.
47. Y.F. Chen, D.M. Bagnall, Z.Q. Zhu, T. Sekiguchi, K.T. Park, K. Hiraga, T. Yao, “Growth of ZnO single crystal thin films and quantum pyramids on sapphire (0001) by plasma enhanced molecular beam epitaxy”, Nonlinear Optics, 1997, vol.18 , (no.2-4), 27-30.
46. (invited) X. Wang, Z.M. Jian, H.J. Zhu, F. Lu, Z.Q. Zhu, and T. Yao, “Silicon based low dimensional quantum structures”, Nonlinear Optics, 1997,vol.18 , (no.2-4), 73-80.
45. K. Arai, Z.Q. Zhu, T. Sekiguchi, T. Yasuda, F. Lu, Y. Segawa, and T. Yao, “Micro-cathodeluminescence study of ZnSe quantum dots embeded in ZnS fabricated by molecular beam epitaxy”, Nonlinear Optics, 1997, vol.18 , (no.2-4), 227-30.
44. (invited) Yao, T.; Zhu, Z.; Wu, Y.H.; Song, C.D.; Kimura, K.; Kajiyama H.; Miwa, S; Yasuda, T., “ Nitrogen doping and carrier compensation in p-ZnSe”, Journal of Crystal Growth, 1996, vol.159, (no.1-4):214-20.
43. Z. Zhu, G.D. Brownlie, Horsburgh, G.; P.J. Thompson, S.Y. Wang, K.A. Prior, B.C. Cavenett., “Compensating processes in nitrogen delta -doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy”, Journal of Crystal Growth, 1996, vol.159, (no.1-4):248-51.
42. G.D. Brownlie, Z. Zhu, G. Horsburgh, T. Steele, P.J. Thompson, K.A. Prior, B.C. Cavenett, “Photoluminescence excitation spectroscopic studies of nitrogen doped ZnSe”, Journal of Crystal Growth, 1996, vol.159, (no.1-4):321-4.

41. (invited) T. Yao and Zhu, Z., “Doping characteristics of N-doped p-ZnSe and Cl-doped n-ZnSe”, Physica Status Solidi B, 1995, vol.187, (no.2):387-92.
40. Z.Zhu, G. Horsburgh, P.J. Thompson, G.D. Brownlie, S.Y. Wang, K.A. Prior, B.C. Cavenett, “Nitrogen doping during atomic layer epitaxial growth of ZnSe”, Applied Physics Letters, 1995, vol.67, (no.26):3927-9.
39. Ziqiang Zhu; Brownlie, G.D.; Thompson, P.J.; Prior, K.A.; Cavenett, B.C., “A compensating donor with a binding energy of 57 meV in nitrogen-doped ZnSe”, Applied Physics Letters, 1995, vol.67, (no.25):3762-4.
38. Z. Zhu, G.D. Brownlie, G. Horsburgh, P.J. Thompson, S.Y. Wang, K.A. Prior, B.C. Cavenett., “Compensating acceptors and donors in nitrogen delta -doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy” Applied Physics Letters, 1995, vol.67, (no.15):2167-9.
37. Wang, J.; Wang, X.; Zhu, Z.Q.; Yao, T., “Optical characterization of ZnSe/ZnSx/Se1-x/ superlattices pseudomorphically grown on GaAs(100) substrates by molecular beam epitaxy”, Journal of Applied Physics, 1995, vol.77, (no.6):2709-13.
36. Yao, T.; Fujimoto, M.; Uesugi, K.; Kamiyama, S.; Zhu, Z., “Reflection high-energy electron diffraction study of the heterointerface formation of ZnSe/ZnTe”, Journal of Crystal Growth, 1995, vol.150, (no.1-4, pt.2):823-7.
35. Zhu, Z.; Takebayashi, K.; Yao, T.; Okada, Y., “Lowering of band-gap energy in heavily nitrogen-doped ZnSe”, Journal of Crystal Growth, 1995, vol.150, (no.1-4, pt.2):797-802.
34. Tanaka, K.; Zhu, Z.; Yao, T., “Study of deep hole and electron traps in nitrogen-doped ZnSe by isothermal capacitance transient spectroscopy and deep level transient spectroscopy”, Applied Physics Letters, 1995, vol.66, (no.24):3349-51.
33. Wang, J.; Xun Wang; Zhu, Z.Q.; Yao, T., “Effects of quantum confinement and strain in Zn1-x/Cdx/Se/ZnSe strained-layer superlattices”, Journal of Physics: Condensed Matter, 1995, vol.7, (no.29):5835-42
32. Zhu, Z.; Takebayashi, K.; Tanaka, K.; Ebisutani, T.; Kawamata, J.; Yao, T., “Photoluminescence properties of nitrogen-doped ZnSe grown by molecular-beam epitaxy”, Applied Physics Letters, 1994, vol.64, (no.1):91-3.
31. Z. Zhu, T. Abe, Y. Sasaki, Y. Fukuma, T. Yao, J. Takehara, M. Kitagawa, “Metalorganic molecular beam epitaxy of III-V compounds for solar cell application”, Solar Energy Materials and Solar Cells, 1994, vol.35, (no.1-4):61-7.
30. Y. Sasaki, Y. Fukuma, T. Abe, Z. Zhu, T. Yao, J. Takehara, M. Kitagawa, “Metalorganic molecular beam epitaxy of III-V compounds using tertiarybutyl-V as group-V sources”, Journal of Crystal Growth, 1994, vol.136, (no.1-4):162-5.
29. Zhu, Z.; Yoshihara, H.; Takebayashi, K.; Yao, T., “Characterization of alloy formation at the ZnSe/CdSe quantum-well interface by photoluminescence spectroscopy”, Journal of Crystal Growth, 1994, vol.138, (no.1-4):619-24.
28. Zhu, Z.; Ebisutani, T.; Takebayashi, K.; Tanaka, K.; Yao, T., “Molecular beam epitaxy of ZnSe doped with nitrogen on vicinal (100)-oriented and (211)-oriented GaAs substrates”, Journal of Crystal Growth, 1994, vol.138, (no.1-4):397-402.
27. Yao, T.; Matsumoto, T.; Sasaki, S.; Chung, C.K.; Zhu, Z.; Nishiyama, F., “Lattice location of N atoms in heavily N-doped ZnSe studied with ion beam analysis and its implication on deep level defects”, Journal of Crystal Growth, 1994, vol.138, (no.1-4):290-4.
26. Ziqiang Zhu; Ebisutani, T.; Takebayashi, K.; Tanaka, K.; Yao, T., “Nitrogen-doped ZnSe grown on 4 degrees -misoriented GaAs(100) and GaAs(211) by molecular beam epitaxy”, Applied Physics Letters, 1994, vol.64, (no.14):1833-5.
25. Hwang, S.J.; Shan, W.; Song, J.J.; Zhu, Z.Q.; Yao, T., “Effect of hydrostatic pressure on strained CdSe/ZnSe single quantum wells”, Applied Physics Letters, 1994, vol.64, (no.17):2267-9.
24. Ohtsuka, T.; Kawamata, J.; Ziqiang Zhu; Yao, T., “P-type CdSe grown by molecular beam epitaxy using a nitrogen plasma source”, Applied Physics Letters, 1994, vol.65, (no.4):466-8.
23. A.J. Fischer, D.S. Kim, J. Hays, W. Shan, J.J. Song, D.B. Eason, J. Ren, J.F. Schetzina, H. Lou, J.K. Furdyna, Z.Q. Zhu, T. Yao, J.F. Klem, W. Schafer, “Femtosecond coherent spectroscopy of bulk ZnSe and ZnCdSe/ZnSe quantum wells”, Physical Review Letters, 1994, vol.73, (no.17):2368-71.
22. Z. Zhu; Mori, H.; Yao, T., “Observation of activation of Li atoms in ZnSe by photoluminescence”, Journal of Applied Physics, 1993, vol.73, (no.3):1146-50.
21. Z. Zhu; Yao, T.; Mori, H., “Selective doping of N-type ZnSe layers with chlorine grown by molecular beam epitaxy”, Journal of Electronic Materials, 1993, vol.22, (no.5):463-6.
20. Z. Zhu; H. Yoshihara; K. Takebayashi; T. Yao, “Interfacial alloy formation in ZnSe/CdSe quantum-well heterostructures characterized by photoluminescence spectroscopy”, Applied Physics Letters, 1993, vol.63, (no.12):1678-80.
19. Zhu, Z.; Yoshihara, H.; Takebayashi, K.; Yao, T., “Extremely low resistivity, high electron concentration ZnSe grown by means of selective doping method”, Japanese Journal of Applied Physics, 1993, vol.32: 654-9
18. Yoshihara, H.; Takebayashi, K.; Zhu, Z.; Yao, T., “Characterization of interfacial alloy formation in ZnSe/CdSe quantum-well heterostructures by photoluminescence spectroscopy”, Journal of The Surface Science Society of Japan, 1993, vol. 14, (no.2):38-42.
17. Shan, W.; Hwang, S.J.; Hays, J.M.; Song, J.J.; Zhu, Z.Q.; Yao, T., “Optical properties of highly strained CdSe/ZnSe quantum wells”, Journal of Applied Physics, 1993, vol.74, (no.9):5699-704.
16. Wang Xun，Wang Jie，Zhu Ziqiang, “Latest report on the progress of blue-green laser diodes” (in Chinese), Physics, 1993, vol. 22, 187-8.
15. Ziqiang Zhu; Mori, H.; Kawashima, M.; Yao, T., “Planar doping of p-type ZnSe layers with lithium grown by molecular beam epitaxy”, Journal of Crystal Growth, 1992, vol.117, (no.1-4):400-5.
14. Zhu, Z.; Kawashima, M.; Yao, T., “Atomic layer controlled doping by reflection high-energy electron diffraction during epitaxial growth”, Journal of Applied Physics, 1992, vol.71, (no.6):2650-4.
13. Sasaki, Y.; Yoshida, K.; Nishiyama, F.; Yao, T.; Zhu, Z.; Mori, H.; Kawashima, M., “Ion beam analysis of ZnSe”, Japanese Journal of Applied Physics, Part 2 (Letters), 1992, vol.31, (no.4B):4449-51.
12. Zhu, Z.; Mori, H.; Yao, T., “Extremely low resistivity, high electron concentration ZnSe grown by planar-doping method”, Applied Physics Letters, 1992, vol.61, (no.23):2811-13.
11. Ziqiang Zhu; Hagino, M.; Uesugi, K.; Kamiyama, S.; Fujimoto, M.; Yao, T., “Surface processes in ALE and MBE growth of ZnSe: adsorption and sublimation processes”, Journal of Crystal Growth, 1990, vol.99, (no.1-4):441-5.
10. Zhu, Z.; Nomura, T.; Miyao, M.; Hagino, M.; Yao, T., “MBE growth mechanisms of ZnSe”, Reports of the Graduate School of Electronic Science and Technology, Shizuoka University, 1990 (no.11):19-28.
9. Yao, T.; Zhu, Z.Q.; Uesugi, K.; Kamiyama, S.; Fujimoto, M., “Molecular beam epitaxy/atomic layer epitaxy growth processes of wide-band-gap II-VI compounds: characterization of surface stoichiometry by reflection high-energy electron diffraction”, Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films), 1990, vol.8, (no.2):997-1001.
8. “MBE growth mechanism of ZnSe: flux ratio and substrate temperature”, Journal of Crystal Growth, 1989, vol.95, (no.3):529-532.
7. Ziqiang Zhu; Nomura, T.; Miyao, M.; Hagino, M., “MBE growth mechanism of ZnSe: growth rate and surface coverage”, Journal of Crystal Growth, 1989, vol.96, (no.3):513-18.
6. Ziqiang Zhu; Hagino, M.; Uesugi, K.; Kamiyama, S.; Fujimoto, M.; Yao, T., “Surface processes in ALE and MBE growth of ZnSe: correlation of RHEED intensity variation with surface coverage”, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), 1989, vol.28, (no.9):1659-63.
5. Zhu, Z.; Nomura, T.; Miyao, M.; Hagino, M., “MBE growth mechanisms of ZnSe”, Journal of The Surface Science Society of Japan, 1989, vol. 9, (no.5):343-9.
4. K. Uesugi, S. Kamiyama, M. Fujimoto, Z. Zhu, T. Yao, “Determination of two dimensional growth conditions for Zn chalcogenides by the observation of RHEED intensity oscillation”, Journal of The Surface Science Society of Japan, 1989, vol. 10, (no.6):429-34.
3. M. Fujimoto, K. Uesugi, S. Kamiyama, Z. Zhu, T. Yao, “Evaluation of surface stoichiometry of Zn-chalcogenides by RHEED intensity oscillation”, Journal of The Surface Science Society of Japan, 1989, vol. 10, (no.6):410-15.
2. S. Kamiyama, K. Uesugi, M. Fujimoto, Z. Zhu, T. Yao, “Observation of ALE growth process of ZnTe by RHEED”, Journal of The Surface Science Society of Japan, 1989, vol. 10, (no.5):358-363.
1. Zhu, Z.; Nomura, T.; Miyao, M.; Hagino, M., “Molecular beam epitaxial growth of ZnSe on GaP”, Journal of the Vacuum Society of Japan, 1987, vol.30, (no.5):343-6.

Review papers
4. Bagnall DM; Chen YF; Zhu Z; Yao T; Shen MY; Goto T, “Plasma assisted molecular beam epitaxy of ZnO for optoelectronic applications”, Recent Res. Devel. Crystal Growth，1999, pp257-273
3. Elisabeth Kurtz, Ziqiang Zhu, and Takafumi Yao, “II-VI semiconductor quantum dots”, Japanese Journal of Applied Physics, 1998, vol. 67 (no.7), 802.
2. Z. Zhu and T. Yao, “Compensation impurities in ZnSe and its alloys in the EMIS Datareviews”, Series No.17: “Properties of Wide Bandgap II-VI Semiconductors”(Ed. R. Bhargava, The Institute of Electrical Engineers, London, Unite Kingdom, 1997)
1. Prior, K.A.; Meredith, W.; Brownlie, G.D.; Zhu, Z.; Cavenett, B.C., “Compensation in p-type ZnSe based semiconductors”, Materials Science & Engineering B (Solid-State Materials for Advanced Technology), 1997, vol.B43, (no.1-3):9-15.

Papers in conference books recorded in SCI database
7. K. Kurtz, J.X. Shen, M.Y. Shen, Z. Zhu, Y. Oka, T. Goto, and T. Yao, “Growth and time resolved photoluminescence study of self-organized CdSe quantum dots in ZnSe”, IN: Proceedings of 24th International Conference on the Physics of Semiconductors, Jerusalem, Israel. 1998). World Scientific Singapore, 1999.
6. Fischer, A.J.; Kim, D.S.; Hays, J.; Shan, W.; Song, J.J.; Zhu, Z.Q.; Yao, T., “Femtosecond coherent spectroscopy of bulk ZnSe and ZnCdSe/ZnSe quantum wells”, IN: QELS "95. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference. 1995, Vol. 16. p. 215.
5. Zhu, Z.; Tanaka, K.; Takebayashi, K.; Matsumoto, T.; Yao, T., “Origins of compensating donors and acceptors in heavily nitrogen-doped ZnSe”, IN: Proceedings of 22nd International Conference on the Physics of Semiconductors, Vancouver, BC, Canada, 15-19 Aug. 1994). Edited by: Lockwood, D.J. Singapore: World, Scientific, 1995. p. 2463-6 vol.3.
4. Zhu, Z.; Ebisutani, T.; Takebayashi, K.; Yao, T., “Nitrogen-doped ZnSe grown on vicinal (100)-oriented and (211)-oriented GaAs substrates by MBE”, IN: Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Chiba, Japan, Aug. 1993. p. 71-3.
3. Zhu, Z.; Yoshihara, H.; Takebayashi, K.; Yao, T., “Extremely low resistivity, high electron concentration ZnSe grown by planar doping method”, IN: Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, Tsukuba, Japan, 26-28 Aug. 1992. p. 333-5.
2. Zhu, Z.; Kawashima, M.; Yao, T., “Atomic layer controlled substitutional doping with lithium in ZnSe”, IN: Atomic Layer Growth and Processing Symposium, CA, USA, 29 April-1 May Edited by: Kuech, T.F.; Dapkus, P.D.; Aoyagi, Y. Pittsburgh, PA, USA: Mater. Res. Soc, 1991. p. 243-9.
1. Ziqiang Zhu; Nomura, T.; Miyao, M.; Hagino, M., “MBE growth mechanisms of ZnSe: flux ratio and substrate temperature”, IN: Workbook of the Fifth International Conference. 1988 MBE-V Sapporo. Japan, 28 Aug.-1 Sept. 1988. p. 290-3.

Invited presentation
7. 朱自强，“ZnO光泵激子激光器”， 第五届全国分子束外延学术会议，昆明市，1999年
6月20－26日
6. 朱自强，“III-V族氮化物蓝/绿色发光与激光器件的最新发展”，东方科技论坛：信息光子学前沿与红外焦平面，上海，1999年8月.
5. 朱自强，“非致冷热电单元及阵列研究”，青年科学家论坛（国家科委）：原子分子水平上的科学与技术，北京，1999年9月
4. Z. Zhu, “Characterization of compensating centers in nitrogen-doped ZnSe”, The 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, September 29 – October 2, 1998
3. Z. Zhu, “Self-organized growth of II-VI wide band gap quantum dot structures”, Japanese – German Seminar on II-VI Semiconductors, Bremen, Germany, March 23-27,1997
2. 朱自强, “II－VI族自生长量子点”, 第四届全国分子束外延学术会议，无锡市，1997年9月14－18日
1. Z. Zhu, “Characterization of compensating centers in nitrogen-doped ZnSe” The 7th International Conference on II-VI Compounds and Devices, Edinburgh, Scotland, UK, August 13-18, 1995