导航
个人资料
个人概况
研究方向
开授课程
科研项目
学术成果
荣誉及奖励
个人资料
部门： 物理与电子科学学院
性别： 女
专业技术职务： 博士生导师
毕业院校： 北京工业大学
学位： 物理学博士
学历： 博士研究生
联系电话：
电子邮箱： ycheng@ee.ecnu.edu.cn
办公地址： 华东师范大学闵行校区信息楼608室
通讯地址： 华东师范大学闵行校区信息楼608室
邮编： 200241
传真：
教育经历
2004-2010 北京工业大学 物理学博士
工作经历
2018-今 华东师范大学 极化材料与器件教育部重点实验室 电镜中心
2010-2017 中国科学院 上海微系统与信息技术研究所 信息功能材料国家重点实验室
个人简介
社会兼职
研究领域
新型半导体存储材料和器件：相变存储器和铁电存储器
开授课程
本科生课程：现代信息存储技术
研究生课程：电子材料与器件
科研项目
19.国家自然科学基金重大研究计划：新型极低功耗铁电场效应管存算一体器件研究，2021.01-2024.12，参与。
18.华东师范大学实验技术研制项目，2020.9-2021.8，主持。
17. 中国科学院战略性先导科技专项：铪基铁电材料的物理起源研究，2020.1-2024.12，参与。
16.极化材料与器件教育部重点实验室主任基金，2020.1-2020.12，主持。
15.电子科学系开放课题，2020.1-2020.12，主持。
14.信息功能材料国家重点实验室开放课题，2019.7-2021.7，主持。
13.国家重点基础研发计划：新型相变材料开发与机理研究，2017.7-2022.6，参与。
12.国家重点基础研发计划：高可靠相变存储材料与器件研究，2017.7-2021.6，参与。
11. 信息功能材料国家重点实验室自主课题，2016.1-2017.12，主持。
10. 国家自然科学基金面上：钛锑碲相变材料的相变机理与微缩特性研究，2014.01-2017.12，参与。
9. 中国科学院战略性先导科技专项：高密度相变存储器技术，2013.6-2017.12，参与。
8. 国家重点基础研发计划：半导体相变存储器，2013.4-2015.8，参与。
7.国家自然科学基金青年：纳米复合相变存储材料Si-Sb2Te3的相转变机理研究，2012.1-2014.1，主持。
6.中国科学院王宽诚博士后工作基金，2012.4-2013.7，主持。
5.中国博士后科学基金特别资助项目，2011.1-2013.7，主持。
4. 中国博士后科学基金面上项目，2011.1-2013.7，主持。
3.国家重点基础研发计划：相变存储器规模制造技术关键基础问题研究，2010.1-2014.8，参与。
2. 02集成电路重大专项：45nm相变存储器工程化关键技术与应用，2009.1-2011.12，参与。
1.国家重点基础研发计划：基于纳米结构的相变机理及嵌入式PCRAM应用基础研究，2007.7-2011.8，参与。
学术成果
2020年
77. Y. Xue,Y. Cheng, Y.H. Zheng, S. Yan, W.X. Song, S.L. Lv, S.N. Song*, Z.T. Song*. Phase change memory based on Ta-Sb-Te alloy-towards a universal memory. Materials Today Physics, 2020, 15: 100266.
76.W.X. Song#, Y. Cheng#, D.L. Cai, Q.Y. Tang, Z.T. Song*, L.H. Wang, J. Zhao, T.J. Xin and Z. P. Liu. Improving the performance of phase-change memory by grain refinement. Journal of Applied Physics, 2020, 128: 075101.
75.Q. Luo#, Y. Cheng#, J.G. Yang, R.R. Cao, H.L. Ma, Y. Yang, R. Huang, W. Wei, Y.H. Zheng, T.C. Gong, J. Yu, X.X. Xu, P. Yuan, X.Y. Li, L. Tai, H.R. Yu, D.S. Shang, Q. Liu, B. Yu, Q.W. Ren, H.B. Lv*, M. Liu*. A highly CMOS compatible hafnia-based ferroelectric diode. Nature communications, 2020, 11: 1391.
74.Y. Cheng*, D.L. Cai#, Y.H. Zheng#, S. Yan, L. Wu, C. Li, W.X Song*, T.J. Xin, S.L. Lv, R. Huang, H.B. Lv, Z.T. Song* and S.L. Feng. Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory. ACS Applied Materials & Interfaces, 2020. DOI: 10.1021/acsami.0c02507.
73.C.R. Zhong#, R.J. Qi#, Y.H. Zheng, Y. Cheng*, W.X. Song* and R. Huang. The Relationships of Microscopic Evolution to Resistivity Variation of a FIB-Deposited Platinum Interconnector. Micromachines, 2020, 11: 588. DOI:10.3390/mi**.
72.Q.Y. Tang#, T.Z. He#, K. Yu, Y. Cheng*, R.J. Qi*, R. Huang, J. Zhao, W.X. Song and Z.T. Song. The effect of thickness on texture of Ge2Sb2Te5phase-change films. Journal of Materials Science: Materials in Electronics, 2020, 31:5848-5853.
71.Y.H. Zheng#, R.J. Qi#, Y. Cheng*and Z.T. Song. The crystallization mechanism of Zirconium doped Sb2Te3material for phase change random-access memory application.Journal of Materials Science: Materials in Electronics, 2020, 31:5861-5865.
70.R.J. Qi# and Y. Cheng*.Synthesis of Se nanowires at room temperature using selenourea as Se source. Journal of Materials Science: Materials in Electronic, 2020, 31:5843-5847.
2019年
69.Y.H. Zheng, Y. Wang, T.J. Xin, Y. Cheng*, R. Huang, P. Liu, M. Luo, Z.L. Zhang, S.L. Lv, Z.T. Song* and S.L. Feng. Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5. Communication Chemistry, 2019, 2: 13.
68.K. Ren*, Y. Cheng*, M.J. Xia, S.L. Lv and Z.T. Song. In-situ observation of Ge2Sb2Te5crystallization at the passivated interface. Ceramics International, 2019, 45: 19542.
67.W.X. Zhang, H. Song, Y. Cheng, C. Liu, C.H. Wang, M.A.N. Khan, H. Zhang, J.Z. Liu, C.Z. Yu*, L.J. Wang, and J.S. Li*. Core–Shell Prussian Blue Analogs with Compositional Heterogeneity and Open Cages for Oxygen Evolution Reaction.Advanced Science. 2019, 6(7):**.
66.Chao Liu#, Jing Wang#, Jingjing Wan*, Yan Cheng, Rong Huang, Chaoqi Zhang, Wenli Hu, Guangfeng Wei* and Chengzhong Yu*. Angewandte Chemie. 10.1002/ange..
65.X. Chen, X.Q. Liu*, Y. Chengand Z.T. Song*. The impact of vacancies on the stability of cubic phases in Sb-Te binary compounds. NPG Asia Materials, 2019, 11: 40.
64.Y. Wang, T.Q. Guo, G.Y. Liu, T. Li, S.L. Lv, S.N. Song, Y. Cheng, W.X. Song, K. Ren and Z.T. Song*. Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power-Consumption. ACS Applied Materials & Interfaces, 2019, 11(11): 10848.
63.L.N Lin, Y.L. Ma, J.B. Wu*, F. Pang, J.P. Ge*, S. Sui, Y.F. Yao, R.J. Qi, Y. Cheng, C.G. Duan, J.H. Chu and R. Huang*, Origin of Photocatalytic Activity in Ti4+/Ti3+Core–Shell Titanium Oxide Nanocrystals. Journal of Physical Chemistry C, 2019, 123, 34: 20949.
62.C.R. Zhong, L.N. Lin, R.J. Qi, Y. Cheng, X.S. Gao, R. Huang*. Plan-view Sample Preparation of a Buried Nanodots Array by FIB with Accurate EDS Positioning in Thickness Direction. Ultramicroscopy, 2019, 207: 112840.
61.M.X. Jia, Z.Q. Ren, Y.D. Liu, Y. Cheng, R. Huang, P.H. Xiang, X.D. Tang, B.B. Tian, N. Zhong* and C.G. Duan. Ferroelectric polarization-controlled resistive switching in BaTiO3/SmNiO3epitaxial heterostructures. Applied Physics Letters, 2019, 114: 102901.
60.Y. Wang, T.B. Wang, G.Y. Liu, T.Q. Guo, T. Li, S.L. Lv, Y. Cheng, S.N. Song, K. Ren and Z.T. Song*. High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping. Scripta Materialia, 2019, 164: 25.
2018年
59.X. Chen, Y.H. Zheng, M. Zhu, K. Ren, Y. Wang, T. Li, G.Y. Liu, T.Q. Guo, L. Wu, X.Q. Liu, Y. Cheng*and Z.T. Song. Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application. Scientific Reports, 2018, 8: 6839.
58.Q. Luo, T.C. Gong, Y. Cheng, Q.Z. Zhang, H.R. Yu, J. Yu, H.B. Lv*, H.L. Ma, X.X. Xu, K.L. Huang, X. Zhu, D.N. Dong, J.H. Yin, P. Yuan, L. Tai, J.F. Gao, J.F. Li, H.X. Yin, S.B. Long, Q. Liu, M. Liu*, Coexistence of Charge Trapping and Domain Switching in 14nm FE-FinFET for 1T DRAM and Embedded Non-volatile Memory Application. IEEE International Electron Devices Meeting (IEDM), 2018.
57.C. Li, H.L. Song, Y.W. Shen, Y.F. Wang, Y. Cheng, R.J. Qi, S.Y. Chen, C.G. Duan and R. Huang.Evolution of cation ordering and crystal defects controlled by Zn substitutions in Cu2SnS3ceramics, AIP Advances, 2018, 8: 105322.
56.C. Li, Y.W. Shen, H.L. Song, Y.F. Wang, S.Y. Chen, R.J. Qi, Y. Cheng, C.G. Duan and R. Huang. Microstructure of Cu2S nanoprecipitates and its effect on electrical and thermal properties in thermoelectric Cu2Zn0.2Sn0.8S3ceramics. AIP Advances, 2018, 8: 085105.
55.Y. Wang, Y.H. Zheng, G.Y. Liu, T. Li, T.Q. Guo, Y. Cheng, S.L. Lv, S.N. Song, K. Ren*, Z.T. Song*, Scandium doped Ge2Sb2Te5for high-speed and low-power-consumption phase change memory. Applied Physics Letters, 2018, 112: 133104.
54.Y. Wang, T.B. Wang, Y.H. Zheng, G.Y. Liu, T. Li, S.L. Lv, W.X. Song, S.N. Song, Y. Cheng, K. Ren*, Z.T. Song, Atomic scale insight into the effects of Aluminum doped Sb2Te for phase change memory application. Scientific Reports, 2018, 8: 15136.
2017年
53.Y.H. Zheng, Y. Cheng*, R. Huang, R.J. Qi, F. Rao*, K.Y. Ding, W.J. Yin, S.S. Song, W.L. Liu, Z.T. Song and S.L. Feng. Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5Thin Film. Scientific Reports, 2017, 7: 5915.
52.K. Ren, Y. Cheng*, X. Chen, K.Y. Ding, S.L. Lv, W.J. Yin, X.H. Guo, Z.G. Ji and Z.T. Song*. Carbon layer application in phase change memory to reduce power consumption and atomic migration. Materials Letters, 2017, 206: 52-55.
2016年
51.Y.H. Zheng, M.J. Xia, Y. Cheng*, F. Rao*, K.Y. Ding, W.L. Liu, J. Yu, Z.T. Song and S.L. Feng. Direct observation of metastable face-centered cubic Sb2Te3crystal.Nano Research, 2016, 11: 3453-3462.
50.K.Y. Ding,F. Rao*, S.L. Lv, Y. Cheng, W.L. Liu and Z.T. Song. Low-energy amorphization of Ti1Sb2Te5phase change alloy induced by TiTe2nano-lamellae. Scientific Reports, 2016, 6: 30645.
49.Y.H. Zheng, Y. Cheng*, M. Zhu, X.L. Ji, Q. Wang, S.N. Song, Z.T. Song, W.L. Liu and S.L. Feng. A candidate Zr-doped Sb2Te alloy for phase change memory application. Apply Physics Letters, 2016, 108: 052107.
48.Y.H. Zheng, Y. Cheng*, Z.T. Song, W.J. Yin, M. Zhu, W.L. Liu, S.N. Song and S.L. Feng. Self-precipitated process of Te nanowire from Zr-doped Sb2Te3film. Materials Science Forum, 2016, 848: 489.
2015年
47.F. Rao, Z.T. Song, Y. Cheng, X.S. Liu, M.J. Xia, W. Li, K.Y. Ding, X.F. Feng, M. Zhu and S.L. Feng, Direct observation of titanium-centered octahedral in titanium–antimony–tellurium phase-change material. Nature communications, 2015, 6:10040.
46.M. Zhu, M.J. Xia, Z.T. Song, Y. Cheng, L.C. Wu, F. Rao, S.N. Song, M. Wang, Y.G. Lv and S.L. Feng, Understanding the crystallization behavior of as-deposited Ti–Sb–Te alloys through real-time radial distribution functions. Nanoscale, 2015, 7: 9935.
45.M.J. Xia, M. Zhu, Y.C. Wang, Z.T. Song, F. Rao, L.C. Wu, Y. Chengand S.N. Song, Ti?Sb?Te alloy: a candidate for fast and long-life phase-change memory. ACS Applied Materials & Interfaces, 2015, 7: 7627.
44.Y. Cheng, S.N. Song, Z.H. Zhang, Z.T. Song,B. Liu, S.L. Fengand Z. Zhang, Electron beam annealing for component optimization in Si-Sb-Te material. Materials Science Forum, 2015, 815: 44.
43.L. Li, S.N. Song, Z.H. Zhang, Z.T. Song, Y. Cheng, S.L. Lv, L.C. Wu, B. Liu and S.L. Feng, Investigation of Cr0.06(Sb4Te)0.94alloy for high-speed and high data-retention phase change random access memory applications. Applied Physics A, 2015, 120: 537.
42.L.L. Shen, S.N. Song, Z.H. Zhang, Z.T. Song, Y. Cheng, Y.Q. Zhu, X.H. Guo, W.J. Yin, D.N. Yao, B. Liu and S.L. Feng, Characteristics and mechanism of phase change material W0.03Sb2Te etched by Cl2/BCl3inductively coupled plasmas. Thin Solid Films, 2015, 593: 67.
41.L. Li, S.N. Song, Z.H. Zhang, Y.Q. Zhu, Z.T. Song, Y. Cheng, S.L. Lv, B. Liu and L.L. Chen, Thickness dependent nano-crystallization in Ti0.43Sb2Te3films and its effect on devices. Thin Solid Films, 2015, 590: 13.
40.Q. wang, B. Liu, Y.Y. Xia, Y.H. Zheng, R.R. Huo, Q. Zhang, S.N. Song, Y. Chengand Z.T. Song, Cr-doped Ge2Sb2Te5for ultra-long data retention phase change memory. Applied Physics Letters, 2015, 107:222101.
39.Q. Wang, B. Liu, Y.Y. Xia, Y.H. Zheng, R.R. Huo, M. Zhu, S.N. Song, S.L. Lv, Y. Cheng, Z.T. Song and S.L. Feng, Characterization of Cr-doped Sb2Te3films and their application to phase-change memory. physica status solidi (RRL) - Rapid Research Letters, 2015, 9: 470.
38.S.N. Song, D.N. Yao, Z.T. Song, L.N. Gao, Z.H. Zhang, L. Li, L.L. Shen, L.C. Wu, B. Liu, Y. Chengand S.L. Feng, Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon. Nanoscale Research Letters, 2015, 10:89.
2014年
37.宋志棠，成岩，相变存储器及其发展。《功能材料信息》，2014年第5期。
36.Y.C. Wang, X.G. Chen, Y. Cheng, X.L. Zhou, S.L. Lv, Y.F. Chen, Y.Q. Wang, M. Zhou, H.P. Chen, Y.Y. Zhang, Z.T. Song and G.M. Feng, RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming. IEEE Electron Device Letters, 2014, 35: 5.
35.Y.C. Wang, Y.F. Chen, D.L. Cai, Y. Cheng, X.G. Chen, Y.Q. Wang, M.J. Xia, M. Zhou, G.Z. Li, Y.Y. Zhang, D. Gao, Z.T. Song and G.M. Feng, Understanding the early cycling evolution behaviors for phase change memory application. Journal of Applied Physics, 2014, 116: 204503.
34.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, C. Peng, L. Zhang, D.C. Cao, X.H. Guo, W.J. Yin, L.C. Wu and B. Liu, Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/BCl3inductively coupled plasmas. Microelectronic Engineering, 2014, 115: 51.
33.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, M. Zhu, X.Y. Li, Y.Q. Zhu, X.H. Guo, W.J. Yin, L.C. Wu, B. Liu, S.L. Feng and D. Zhou, Etching of new phase change material Ti0.5Sb2Te3by Cl2/Ar and CF4/Ar inductively coupled plasmas.Applied Surface Science, 2014, 311: 68.
32.Z.H. Zhang, Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, B. Liu, Y.Q. Zhu, D. Zhou and S.L. Feng, Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application.Journal of Applied Physics, 2014, 116: 074304.
31.X.P. Wang, N.K. Chen, X.B. Li,* Y. Cheng, X.Q. Liu, M.J. Xia, Z.T. Song, X.D. Han, S.B. Zhang* and H.B. Sun*, Role of the nano amorphous interface in the crystallization of Sb2Te3towards non-volatile phase change memory: insights from first principles. Physical Chemistry Chemical Physics, 2014, 16: 10810.
2013年
30.Y. Cheng, Y.F. Gu, Z.T. Song, S.N. Song, F. Rao, L.C. Wu, B. Liu and S.L. Feng, Investigation of Sb-rich Sb-Te binary films used as phase change material. In 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, Proceedings of SPIE, 2013, 8782: 87820H.
29.Y.G. Lu, S.N. Song, Z.T. Song, Y. Cheng, L.C. Wu and B. Liu, Crystallization behavior of Ge2Te3-TiO2film for phase-change random access memory application, In 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, Proceedings of SPIE, 2013, 8782: 87821K.
28.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, F. Rao, L.C. Wu, B. Liu, B. Chen and Y.G. Lu, Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application. Apply Physics Letters, 2013, 103: 142112.
27.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, Y.F. Gu and B. Chen, Characterization of the thermal properties for Si-implanted Sb2Te3phase change material. Apply Physics Letters, 2013, 102: 252106.
26.Y.F. Gu, S.N. Song, Z.T. Song, B.S. Yuan, Y. Cheng, Z.H. Zhang, B. Liu and S.L. Feng, Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory, Apply Physics Letters, 2013, 102: 103110.
25.C. Peng, L.C. Wu, F. Rao, Z.T. Song, S.L. Lv, X.L. Zhou, X.F. Du, Y. Cheng, P.X. Yang and J.H. Chu, A simple method used to evaluate phase-change materials based on focused-ion beam technique. Apply Physics Letters, 2013, 102: 203510.
24.X.L. Zhou, L.C. Wu, Z.T. Song, Y. Cheng, F. Rao, K. Ren, S.N. Song, B. Liu and S.L. Feng, Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high performance phase-change memory. Acta Materialia, 2013, 61: 7324.
23.M. Zhu, L.C. Wu, F. Rao, Z.T. Song, X.L. Ji, D.N. Yao, Y. Cheng, S.L. Lv, S.N. Song, B. Liu and L. Xu, The effect of Titanium doping on the structure and phase change characteristics of Sb4Te.Journal of Applied Physics, 2013, 114: 234302.
22.Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, X.Y. Liu, X.F. Du, B. Liu and S.L. Feng, Reactive ion etching of SixSb2Te in CF4/Ar plasma for nonvolatile phase-change memory device. Journal of Nanoscience and Nanotechnology, 2013, 13: 1594.
21.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, Y.F. Gu, L.C. Wu, B. Liu and S.L. Feng, Study on GeGaSbTe film for long data retention phase change memory application. Journal of Non Crystalline Solids, 2013, 381: 54.
2012年
20.N. Yan, Y. Cheng, X.Q. Liu, Z.T. Song and Z. Zhang, In situtransmission electron microscopy investigation of SixSb100-xphase-change materials.Materials Letters, 2012, 84: 20-23.
19.F. Rao, Z.T. Song, Y. Cheng, M.J. Xia, K. Ren, L.C. Wu, B. Liu and S.L. Feng, Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5and Si3.5Sb2Te3materials. Acta Materialia, 2012, 60: 323.
18.K. Ren, F. Rao, Z.T. Song, S.L. Lv, Y. Cheng, L.C. Wu, C. Peng, X.L. Zhou, M.J. Xia, B. Liu and S.L. Feng, Pseudobinary Al2Te3-Sb2Te3material for high speed phase change memory application. Apply Physics Letters, 2012, 100: 052105.
17.Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, X.F. Du, B. Liu and S.L. Feng, SixSb2Te materials with stable phase for phase change random access memory applications.Journal of Applied Physics, 2012, 111: 054319.
16.L. Zhang, L.X. Gu, X.D. Han, H. Huang, Y.N. Dai, Y. Cheng, Y. Wang, Z. Zhang, Y.Q. Wu, B. Liu and Z.T. Song, The influence of sputtering power on phase-change films. Electrochemical and Solid-State Letters, 2012, 15 (6): H1-H3.
15.Y.G. Lu, S.N. Song, Z.T. Song, W.C Ren, Y.L. Xiong, F. Rao, L.C. Wu, Y. Cheng, Bo. Liu, Superlattice-like GaSb/Sb2Te3films for low-power phase change memory. Scripta Materialia, 2012, 66: 702.
14.X. Zhang, F. Rao, B. Liu, C. Peng, X.L. Zhou, D.N. Yao, X.H. Guo, S.N Song, S.N. Song, L.Y. Wang, Y. Cheng, L.C. Wu, Z.T. Song and S.L. Feng. Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma, Journal of Semiconductors, 2012, 33: 102003.
13.X. Zhang, B. Liu, C. Peng, F. Rao, X.L. Zhou, S.N. Song, L.Y. Wang, Y. Cheng, L.C. Wu, D.N. Yao, Z.T. Song and S.L. Feng. Study on Germanium Nitride as a buffer layer for phase change memory, Chinese Physics Letters, 2012, 29: 107201.
2011年
12.Y. Cheng, Z.T. Song, Y.F. Gu, S.N. Song, F. Rao, L.C. Wu, B. Liu and S.L Feng, Influence of silicon on the thermally induced crystallization process of Si-Sb4Te phase change materials. Apply Physics Letters, 2011, 99: 261914.
11.X.L. Zhou, L.C. Wu, Z.T. Song, F. Rao, Y. Cheng, C. Peng, D.N. Yao, S.N. Song, B. Liu, S.L. Feng and B. Chen, Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state. Apply Physics Letters, 2011, 99: 032105.
10.F. Rao, Z.T. Song, K. Ren, X.L. Zhou, Y. Cheng, L.C. Wu and B. Liu, Si-Sb-Te materials for phase change memory applications. Nanotechnology, 2011, 22: 145702.
9.T. Zhang, Z.T. Song, Y.F. Gu, Y. Cheng, B. Liu and S.L. Feng, Mechanism of oxidation on Si2Sb2Te5phase change material and its application. Japanese Journal of Applied Physics, 2011, 50: 020202.
8.Y.F. Gu, Y. Cheng, S.N. Song, T. Zhang, Z.T. Song, Y.X. Liu, X.F. Du, B. Liu and S.L Feng, Advantages of SixSb2Te phase-change material and its applications in phase-change random access memory. Scripta Materialia, 2011, 65: 622.
7.K. Ren, F. Rao, Z.T. Song, Y. Cheng, L.C. Wu, X.L. Zhou, Y.F. Gong, M.J. Xia, B. Liu and S.L. Feng, Study on the crystallization behaviors of Si2Sb2Texmaterials. Scripta Materialia, 2011, 64: 685.
6.L.C. Wu, X.L. Zhou, Z.T. Song, M. Zhu, Y. Cheng, F. Rao, S.N. Song, B. Liu and S.L. Feng, Sb-rich Si-Sb-Te phase-change material for phase-change random access memory applications, IEEE Transactions on Electron Devices. 2011, 58: 4423.
5.Y.G. Lu, S.N. Song, Z.T. Song, W.C. Ren, Y. Chengand B. Liu, Crystallization process of amorphous GaSb5Te4film for high-speed phase change memory. Applied Physics Express, 2011, 4: 094102.
4.Y.G. Lu, S.N. Song, Z.T. Song, W.C. Ren, C. Peng, Y. Chengand B. Liu, Investigation of HfO2doping on GeTe for phase change memory. Solid State Sciences, 2011, 13: 1943.
2010年前
3.Y. Cheng, N. Yan, X.D. Han, Z. Zhang, T. Zhang, Z.T. Song, B. Liu and S.L. Feng, Thermally induced phase separation of Si-Sb-Te alloy. Journal of Non-Crystalline Solids, 2010, 356(18-19): 884-888.
2.Y. Cheng, X.D. Han, X.Q. Liu, K. Zheng, Z. Zhang, T. Zhang, Z.T. Song, B. Liu and S.L Feng. Self- extrusion of Te-nanowire from Si-Sb-Te thin films. Apply Physics Letters, 2008, 93: 183113.
1.T. Zhang, Y. Cheng, Z.T. Song, B. Liu, S.L Feng, X.D. Han, Z. Zhang and B. Chen. Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process. Scripta Materialia, 2008, 58: 977.
荣誉及奖励
1.国家发明专利授权：成岩，黄荣，齐瑞娟，透射电镜和压电力显微镜通用的氮化硅薄膜窗口制备方法，授权日期：2020年4月30日，专利号：ZL 2.9，专利权人：华东师范大学。
2.国家发明专利授权：成岩，黄荣，齐瑞娟，用于透射电镜原位通电芯片的拥有纳米级间距小电极的材料测试单元制备方法，授权日期：2020年1月7日，专利号：ZL 9.4，专利权人：华东师范大学。
3.国家发明专利授权：齐瑞娟，成岩，黄荣，一种二维层状材料样品电学测试微电极的制备方法，授权日期：2020年2月18日，专利号：ZL 9.9，专利权人：华东师范大学。
4.国家发明专利授权：齐瑞娟，彭晖，成岩，黄荣，一种微电极沉积掩膜的制备方法，授权日期：2020年1月7日，专利号：ZL 1.7，专利权人：华东师范大学。
5.国家发明专利授权：宋志棠，郑勇辉，成岩，刘卫丽，宋三年，朱敏，用于相变存储器的Zr-Sb-Te系列相变材料及其制备方法，授权日期：2017年7月14日，专利号：ZL 8.2，专利权人：中科院上海微系统所。
6.国家发明专利申请：刘成，成岩，郑勇辉，肖威，齐瑞娟，黄荣，用于透射电镜原位电学测试的限制型存储单元制备方法，申请日期：2020年4月29日，申请号：0.4，专利权人：华东师范大学。
7.国家发明专利申请：余坤，成岩，刘成，唐琼颜，齐瑞娟，黄荣，张媛媛，一种相变材料纳米线及其制备方法，申请日期：2019年12月25日，申请号：6.X，专利权人：华东师范大学。
8.国家发明专利申请：成岩，郑勇辉，齐瑞娟，黄荣，张媛媛，一种多层存储结构透射电子显微镜原位电学测试单元制备方法，申请日期：2019年10月22日，申请号：6.5，专利权人：华东师范大学。
9.国家发明专利申请：宋志棠，任堃，沈佳斌，郑勇辉，成岩，一种用于原位电学测试的透射电镜样品的制备方法，申请日期：2017年11月28日，申请号：0.5，专利权人：中科院上海微系统所。
10.国家发明专利申请：宋志棠，丁科元，成岩，相变存储器单元及其制备方法，申请日期：2017年4月1日，申请号：5.2，专利权人：中科院上海微系统所。
