李文武 教授，博士生导师
物理与电子科学学院??????


导航
个人资料
研究方向
开授课程
科研项目
学术成果
荣誉及奖励







个人资料
部门： 物理与电子科学学院
毕业院校：
学位： 博士
学历：
邮编：
联系电话： +86-
传真：
电子邮箱： wwli@ee.ecnu.edu.cn
办公地址： 闵行校区信息楼549室
通讯地址： 上海市闵行区东川路500号 华东师范大学物理与电子科学学院 邮编：200241

教育经历
2007年7月本科毕业于中北大学微电子学专业。2012年5月获得华东师范大学微电子学与固体电子学博士学位，导师褚君浩院士和胡志高教授。

工作经历
2012年6月至2014年9月分别在日本国家材料科学研究院(National Institute for Materials Science, Japan)和中国南方电网公司从事研究工作。2014年10月-2019年6月任华东师范大学信息科学技术学院教授，紫江青年****。2015年6月起任博士生导师。2019年7月至今任职于华东师范大学物理与电子科学学院。

个人简介
2019年07月起任华东师范大学物理与电子科学学院教授，博士生导师。
主要研究领域：
(1) 新型微电子器件及集成应用;
(2) 半导体光电探测器
(3) 半导体材料的光电子特性、器件与物理
招生专业
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学术型博士研究生(凝聚态物理)：本科直博、硕博连读、四年制博士
学术型硕士研究生(凝聚态物理)：学制三年
欢迎有志于在以上三个方向从事科学研究的博士生和硕士生联系报考！
（研究方向偏电子和应用，报考前请务必致信：wwli@ee.ecnu.edu.cn)


社会兼职
1. 担任Frontiers in Energy Research期刊的GuestEditor
2. 担任International Journal of Photoenergy期刊的Guest Editor
2. 南方电网公司科技项目结题验收专家
3. 第十二届上海市青联委员(2019-2024)


研究方向

一、面向信息技术应用的新型微电子器件及其集成电路






二、半导体光电探测器

三、半导体材料的光电子特性与物理


开授课程
2015-2019学年第二学期 《光电子材料特性与应用》 微电子/物理电子专业硕博课程
2020学年第二学期 《微电子器件与应用》 微电子专业博士课程


科研项目

1. 国家自然科学基金-面上项目(**)：基于肖特基结的低功耗与高增益聚合物晶体管及其集成电路应用研究，项目负责人。(对应研究方向一)
2.上海市自然科学基金-探索类项目(19ZR**)：基于范德华异质集成的二维隧穿电子器件，项目负责人。(对应研究方向一)
3. 国家自然科学基金-青年科学基金(**): 二维过渡金属硫化物的光电子特性及其外场调控，项目负责人。(对应研究方向三)
4. 国家自然科学基金-联合基金(U**): 多价态金属氧化物混合相光学常数、相变规律和能带结构的光谱研究，项目负责人。(对应研究方向三)
5. 中国南方电网公司重点项目子课题(KJ152027): 六氟化硫分解机理及设备故障与分解物数据模型的研究，项目负责人。(应用型项目)


学术成果
主要研究领域包括新型微电子器件及其集成电路应用、信息功能半导体材料的光电子特性与器件。近年来，参与了国家重大科学研究计划、日本世界领先科技创新研发计划(FIRST Program)和上海市科学研究重大项目等十余项课题研究。主持了3项国家自然科学基金(青年基金、面上项目、NSAF联合基金)和上海市自然基金等课题多项。已在Nature Communications, Matter, Advanced Materials (5篇),ACS Nano,Advanced Functional Materials (3篇)和Applied Physics Letters (10篇),IEEE Electron Device Letters (3篇), IEEE Transactions on Electron Devices (3篇)等国际著名学术期刊上发表SCI检索论文70篇，其中第一作者(含共同)或者通迅作者论文41篇。申请专利15项，授权8项。研究成果已被Science,Nature Nanotechnology, Nature Materials, Nature Physics和Chemical Reviews, 美国科学院院刊(PNAS)等著名期刊引用1000余次。参与撰写出版国际英文专著章节2章。受邀在国内外重大学术会议上做报告十余次。
近五年代表性研究成果
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1.Feng-Shou Yang, Mengjiao Li*, Mu-Pai Lee, I-Ying Ho, Jiann-Yeu Chen, Haifeng Ling, Yuanzhe Li, Jen-Kuei Chang, Shih-Hsien Yang, Yuan-Ming Chang, Ko-Chun Lee, Yi-Chia Chou, Ching-Hwa Ho,Wenwu Li*, Chen-Hsin Lien*, and Yen-Fu Lin*, Oxidation-Bootsted Charge Trapping in Ultra-Sensitive van der Waals Materials for Artificial Synaptic Features, Nature Communications, 11, 2972 (2020).
2. Zhikai Le, Wei Zhang,Wenwu Li*,Jianping Tan, Ruiqing Li, Xuebin Wang, Yusuf Valentino Kaneti*, Xiangfen Jiang*, Junhao Chu, Yusuke Yamauchi, and Ming Hu*, Metal-Organic Power Thermochemical Solid-Vapor Architectonics toward Gradient Hybrid Monolith with Combined Structure-Function Features, Matter, 3, 879-891 (2020).
3. Caifang Gao, Mu-Pai Lee, Mengjiao Li, Ko-Chun Lee, Feng-Shou Yang, Che-Yi Lin, Kenji Watanabe, Takashi Taniguchi, Po-Wen Chiu, Chen-Hsin Lien, Wen-Wei Wu, Shu-Ping Lin*,Wenwu Li*,Yen-Fu Lin*, and Junhao Chu, ***, Advanced Functional Materials, (in press 2021).
4. Keyang Zhao, Jianxiong Zou, Fanming Huang, Caifang Gao, Xiang Wang, Wenwu Li*, Wei Tian*, Yen-Fu Lin*, Zhigao Hu, and Junhao Chu, Asymmetric Au Electrodes-Induced Self-Powered Organic-Inorganic Perovskite Photodetectors, IEEE Transactions on Electron Devices, (in press 2021).
5. Fanming Huang, Yang Xu, Zhecheng Pan, Wenwu Li*, and Junhao Chu, Direct Patterning on Top-Gate Organic Thin-Film Transistors: Improvement of On/Off Ratio, Subthreshold Swing, and Uniformity, IEEE Electron Device Letters, 41, 1082 (2020).
6. Wenlei Yin, Jiayan Yang, Keyang Zhao, Anyang Cui, Jiaoyan Zhou, Wei Tian,Wenwu Li,*Zhigao Hu, and Junhao Chu, High Responsivity and External Quantum Efficiency Photodetectors Based on Solution-Processed Ni-Doped CuO Films, ACS Applied Materials & Interfaces, 12, 11797 (2020).
7. Han Wu, Siqi Shen, Xiyan Xu, Chunyang Qiao, Xiaohong Chen, Jun Li*,Wenwu Li*,Wei Ou-Yang*, Facile Fabrication and High Field Emission Performance of 2D Ti3C2TxMXene Nanosheets for Vacuum Electronic Devices, IEEE Transactions on Electron Devices, 67, 5138(2020).
8. Mengjiao Li, Feng-Shou Yang, Yung-Chi Hsiao, Che-Yi Lin, Hsing-Mei Wu, Shih-Hsien Yang, Hao-Ruei Li, Chen-Hsin Lien, Ching-Hwa Ho, Heng-Jui Liu, Wenwu Li*,Yen-Fu Lin,* and Ying-Chih Lai*, Low-Voltage Operational, Low-Power Consuming, and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics, Advanced Functional Materials, 29, ** (2019). DOI: 10.1002/adfm.封面论文
9. Fanming Huang, Ao Liu, Huihui Zhu, Yong Xu*, Francis Balestra, Gerard Ghibaudo, Yong-Young Noh*, Junhao Chu, and Wenwu Li*,Reliable Mobility Evaluation of Organic Field-Effect Transistors with Different Contact Metals, IEEE Electron Device Letters, 40, 605 (2019). DOI: 10.1109/LED.2019.**
10.Fanming Huang, Mengjiao Li, Yang Xu,Anyang Cui,Wenwu Li*,Yong Xu*, Junhao Chu, and Yong-Young Noh*,UnderstandingThickness-Dependent ElectricalCharacteristics in Conjugated Polymer Transistors with Top Gate Staggered Structure,IEEE Transactions on Electron Devices, 66 (6), 2723-2728 (2019). DOI:10.1109/TED.2019.**
11. Yu Yang, Jiayan Yang, Wenlei Yin, Fanming Huang, Anyang Cui, Dongxu Zhang,Wenwu Li*,Zhigao Hu, and Junhao Chu,Annealing Time Modulated the Film Microstructures and Electrical Propertiesof P-type CuO Field Effect Transistors,Applied Surface Science, 481, 632 (2019). DOI:10.1016/j.apsusc.2019.03.130
12. Mengjiao Li, Che-Yi Lin, Shih-Hsien Yang, Yuan-Ming Chang, Jen-Kuei Chang,Feng-Shou Yang, Chaorong Zhong, Wen-Bin Jian, Chen-Hsin Lien, Ching-Hwa Ho,Heng-Jui Liu, Rong Huang,Wenwu Li*,Yen-Fu Lin,* and Junhao Chu,High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping,Advanced Materials, 30, ** (2018). DOI:10.1002/adma.
13. Shih-Hsien Yang, You-Teng Yao, Yong Xu, Che-Yi Lin,Yuan-Ming Chang, Yuen-Wuu Suen*, Huabin Sun, Chen-Hsin Lien,Wenwu Li*, and Yen-Fu Lin*,Atomically Thin Van der Waals Tunnel Field-effect Transistors and its Potential for Applications,Nanotechnology, 30, 105201(2019). DOI:10.1088/1361-6528/aaf765
14.Chang-Hung Chen*#,Wen-Wu Li#,Yuan-Ming Chang, Che-Yi Lin, Shih-Hsien Yang, Yong Xu*, and Yen-Fu Lin*,Negative-Differential-Resistance Devices Achieved by Band-StructureEngineering in Silicene under Periodic Potentials,Physical Review Applied, 10, 044407 (2018). DOI:10.1103/PhysRevApplied.10.044047
15. Keyang Zhao, Fanming Huang, Chen-Min Dai,Wenwu Li*,Shi-You Chen, Kai Jiang,Yi-Ping Huang, Zhigao Hu, and Junhao Chu,Temperature Dependence of Phonon Modes, Optical Constants, andOptical Band Gap in Two-Dimensional ReS2Films,Journal of Physical Chemistry C, 122, 29464 (2018). DOI:10.1021/acs.jpcc.8b08693
16. Yong Xu*#, Huabin Sun#,Wenwu Li#,Yen-Fu Lin,* Francis Balestra, Gerard Ghibaudo,and Yong-Young Noh*,Exploring the Charge Transport in Conjugated Polymers,Advanced Materials, 29, ** (2017). DOI:10.1002/adma.封面论文
17. Yanyi Zhao#,Wenwu Li#, Xiangfen Jiang*, Fengqiong Li, Xin Li, Wei Zhang, Ji-Sen Jiang,Jian Liu, Katsuhiko Ariga, and Ming Hu*,Coordination Polymer Nanoglue: RobustAdhesion Based on Collective LamellarStacking of Nanoplates,ACS Nano, 11, 3662 (2017). DOI:10.1021/acsnano.6b08068
18.Wenwu Li*, Tingting Sha, Yan Wang, Wenlei Yu,Kai Jiang, Hang Zhou*, Chuan Liu, Zhigao Hu*,and Junhao Chu,Effects of Deposition Methods and Processing Techniques on Band Gap, Interband Electronic Transitions, and Optical Absorption in PerovskiteCH3NH3PbI3Films,Applied Physics Letters, 111, 011906 (2017). DOI:10.1063/1.**
19. Yong Xu*, Huabin Sun, Eul-Yong Shin, Yen-Fu Lin,Wenwu Li*, and Yong-Young Noh*,Planar-Processed Polymer Transistors,Advanced Materials, 28, 8531 (2016). DOI:10.1002/adma.
20. Chih-Kai Hsu, Chi-Yi Lin,Wenwu Li*, Huabin Sun, Yong Xu*, Zhigao Hu, Yuan-Ming Chang,Yuen-Wuu Suen, and Yen-Fu Lin*,The Impact of Electrical Contacts and Contact-induced Ultralow Noise Amplitudes in Layered Transistors,2D Materials, 3, 045015 (2016). DOI:10.1088/2053-1583/3/4/045015
2014年之前:
1.Wenwu Li*, Song-Lin Li, Katsuyoshi Komatsu, Alex Aparecido-Ferreira, Yen-Fu Lin,Yong Xu, Minoru Osada, Takayoshi Sasaki, and Kazuhito Tsukagoshi*,Realization of Graphene Field-effect Transistor with High-k HCa2Nb3O10Nanoflake as Top-gate Dielectric,Applied Physics Letters, 103, 023113 (2013). DOI:10.1063/1.**
2.W. W. Li,J. J. Zhu, J. R. Liang,| Z. G. Hu*, J. Liu, H. D. Chen, and J. H. Chu,External Electric Field Manipulations on Structural Phase Transition of Vanadium Dioxide Nanoparticles and Its Application in Field Effect Transistor,Journal of Physical Chemistry C, 115, 23558 (2011). DOI:10.1021/jp207196g
3.W. W. Li, Q. Yu, J. R. Liang, K. Jiang, Z. G. Hu*, J. Liu, H. D. Chen, and J. H. Chu,Intrinsic Evolutions of Optical Functions, Band Gap, and Higher-energy Electronic Transitions in VO2Film near the Metal-insulator Transition Region,Applied Physics Letters, 99, 241903 (2011). DOI:10.1063/1.**
4.W. W. Li, J. J. Zhu, J. D. Wu, J. Gan, Z. G. Hu*, M. Zhu, and J. H. Chu,Temperature Dependence of Electronic Transitions and Optical Properties in Multiferroic BiFeO3Nanocrystalline Film Determined from Transmittance Spectra,Applied Physics Letters, 97, 121102 (2010). DOI:10.1063/1.**
5.W. W. Li, J. J. Zhu, J. D. Wu, J. Sun, M. Zhu, Z. G. Hu*, and J. H. Chu,Composition and Temperature Dependence of Electronic and Optical Properties in Manganese Doped Tin Dioxide Films on Quartz Substrates Prepared by Pulsed Laser Deposition,ACS Applied Materials & Interfaces, 2, 2325 (2010). DOI:10.1021/am100353f
6.W. W. Li, Z. G. Hu*, Y. W. Li, M. Zhu*, Z. Q. Zhu, and J. H. Chu,Growth, Microstructure, and Infrared-Ultraviolet Optical Conductivity of La0.5Sr0.5CoO3Nanocrystalline Films on Silicon Substrates by Pulsed Laser Deposition,ACS Applied Materials & Interfaces, 2, 896 (2010). DOI:10.1021/am900868a
7.W. W. Li, W. L. Yu, Y. J. Jiang, C. B. Jing, J. Y. Zhu, M. Zhu, Z. G. Hu*, X. D. Tang, and J. H. Chu,Structure, Optical, and Room-Temperature Ferromagnetic Properties of Pure and Transition-Metal-(Cr, Mn, and Ni)-Doped ZnO Nanocrystalline Films Grown by the Sol-Gel Method,Journal of Physical Chemistry C, 114, 11951 (2010). DOI:10.1021/jp103183v

合作研究成果
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1.Yong Xu*, Yun Li, Songlin Li, Francis Balestra, Gerard Ghibaudo,Wenwu Li, Yen-Fu Lin,Huabin Sun*, Jing Wan*, Xinran Wang, Yufeng Guo*, Yi Shi, and Yong-Young Noh*,Precise Extraction of Charge Carrier Mobility for OrganicTransistors,Advanced Functional Materials, 30, ** (2020). Doi:10.1002/adfm..邀请综述, 封面论文
2. Yong Xu*, Huabin Sun, Ao Liu, Hui-Hui Zhu,Wenwu Li, Yen-Fu Lin,and Yong-Young Noh*, Doping: A Key Enabler for Organic Transistors,Advanced Materials, 30, ** (2018).邀请综述
3.Yen-Fu Lin*, Yong Xu, Sheng-Tsung Wang, Song-Lin Li, Mahito Yamamoto,Alex Aparecido-Ferreira,Wenwu Li, Huabin Sun, Shu Nakaharai, Wen-Bin Jian,Keiji Ueno, and Kazuhito Tsukagoshi*,Ambipolar MoTe2 Transistors and Their Applicationsin Logic Circuits,Advanced Materials, 26, 3623 (2014).
4.Song-Lin Li*, Katsunori Wakabayashi*, Yong Xu, Shu Nakaharai, Katsuyoshi Komatsu,Wen-Wu Li,Yen-Fu Lin, Alex Aparecido-Ferreira, and Kazuhito Tsukagoshi*,Thickness-Dependent Interfacial Coulomb Scattering in AtomicallyThin Field-Effect Transistors,Nano Letters, 13, 3546 (2013).
5.Yong Xu*, Chuan Liu*, William Scheideler, Songlin Li,Wenwu Li, Yen-Fu Lin, Francis Balestra, Gerard Ghibaudo, and Kazuhito Tsukagoshi*,Understanding Thickness-Dependent ChargeTransport in Pentacene Transistors byLow-Frequency Noise,IEEE Electron Device Letters, 34, 1298 (2013).
发明专利申请/授权
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1.一种铟掺杂N型有机薄膜晶体管及其制备方法，授权专利号：0.8
2.一种改进亚阈值摆幅和开关比的有机薄膜晶体管及制备方法，申请/授权号：6.4
3.一种高分子聚合物薄膜晶体管及其制备方法，授权专利号：5.3
4.一种有机薄膜晶体管有源层图形化的方法，授权专利号：ZL1.8
5.一种掺镍氧化铜薄膜晶体管及制备方法,申请/授权号：6.8
6.一种低亚阈值摆幅的氧化铟薄膜晶体管的制备方法, 申请/授权号：0.X
7.一种有机薄膜晶体管的制备方法,授权专利号：ZL7.5
8.一种基于抛物面结构的气体光谱测试装置,授权专利号：ZL4.7
9.一种用于热蒸发镀膜仪的防污染窗口,授权专利号：ZL8.5
10.一种掩膜版与样品的贴合及分离装置,授权专利号：ZL5.9
11.一种基于椭球结构的气体光谱测试装置,授权专利号：ZL8.1
12.金属毛细管环烯烃聚合物电介质膜太赫兹空芯光纤及制备，授权专利号: ZL3.4
软件著作权
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1.基于机器学习方法的GIS设备放电故障与SF6分解物组分对应关系分析软件；证书编号: 2019SR**




荣誉及奖励
1. 华东师范大学青年科学奖 2018年
2. 上海市自然科学二等奖(排名第三) 2015年
3. 华东师范大学“紫江青年****”2014年
4. 上海市优秀博士学位论文奖 2014年
5.教育部“博士研究生学术新人奖”2011年
6.华东师范大学校长奖学金特等奖2011年
7.华东师范大学“全国优秀博士学位论文培育行动计划”2011年
8.华东师范大学美国校友会奖学金2011年
9. 华东师范大学智慧一等奖学金 2009年


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