导师代码： 11998
导师姓名： 周琦
性别： 男
特称：

职称： 教授
学位： 哲学博士学位
属性： 专职
电子邮件： zhouqi@uestc.edu.cn

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学术经历： 教育背景 2008.08－2012.08 香港科技大学，电子与计算机工程专业，博士学位 2004.08－2007.04 西安电子科技大学，电子工程专业，硕士学位 2000.09－2004.06 西安电子科技大学，电磁场与微波专业，学士学位工作经历 2015.07-至今 电子科技大学， 副教授 2012.08-2015.06 电子科技大学， 讲师 2007.04-2008.07 摩比天线技术（深圳）有限公司，主任工程师/项目经理★ 个人主页：http://www.me.uestc.edu.cn/teacher/teacherMain?id=191

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个人简介： 周琦，博士。2012年毕业于香港科技大学获博士学位，同年加入电子科技大学微电子与固体电子学院。 专注于第三代宽禁带新型半导体材料、器件及其集成技术的研究，尤其在氮化镓（GaN）功率器件新结构、模型/器件物理、先进制备工艺与GaN功率集成技术领域具有较好的研究基础。开发出一款硅基GaN（GaN-on-Si）栅控横向功率整流器新结构，器件性能达到国际报道的同类器件最高水平。开发出一种高效、低损伤原子层刻蚀技术，利用该技术制备的增强型GaN高电子迁移率晶体管（HEMT）器件性能达到国际领先水平。研究成果发表于行业顶级期刊《IEEE Electron Device Letters》、《IEEE Trans. on Electron Devices》、《IEEE Microwave and Wireless Components Letter》及国际顶级会议IEDM、ISPSD。目前已在IEEE EDL、IEEE TED、IEEE MWCL等本领域顶级期刊和IEDM、ISPSD等国际顶级会议共发表论文31篇（期刊论文均被SCI检索）。研究成果被功率半导体世界最著名****J. B. Baliga (IEEE fellow, 2010年美国国家科学技术奖获得者)发表于Semicond. Sci. and Tech.的 Invited Review Paper及中国科学院院士郝跃教授的综述性文章作为高压 InAlN/GaN HEMT的代表性工作所引用。参加国际重要学术会议12次，邀请报告1次，口头报告4次。申请中国发明专利5项。目前承担和主研国家自然科学基金青年基金、国家自然科学基金重点项目、国家科技重大专项子课题、国防科技重点实验室基金等多项国家级基础研究课题。被IEEE-TED和IEEE-EDL评为2013及2014年度金牌审稿人(Golden Reviewers)。代表性学术成果 ★ 在被誉为“器件奥林匹克”的顶尖会议IEDM上发表论文2篇 ★ 2013年在功率半导体顶级会议ISPSD实现GaN领域中国大陆发表论文0的突破 ★ 2015年在功率半导体顶级会议ISPSD做大会口头报告（截止目前 在GaN领域是中国大陆****唯一） ★ 目前是在顶级会议IEDM、ISPSD以第一作者及通讯作者发表GaN相关研究论文最多的中国大陆****（共4篇） ★ 两项研究成果在顶级期刊 IEEE EDL所发表论文被国际知名半导体行业杂志《Semiconductor Today》和《Compound Semiconductor》进行整版面专题报道

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科研项目： 1.国家重大科技专项 经费：1136 万 2.国家自然科学基金重点项目 经费：360 万3.国家自然科学青年基金 经费：27 万4.中央高效科研启动项目 经费：8 万5.企业横向课题 经费：40 万★ 个人主页：http://www.me.uestc.edu.cn/teacher/teacherMain?id=191

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研究成果： 代表性论文：★ Qi Zhou *, Yang Jin, Yuanyuan Shi, Jinyu Mou, Bao Xu, Bowen Chen, and Bo Zhang, "High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode with MIS-Gated Hybrid Diode," IEEE Electron Device Lett., vol. 36, no. 7, Jul. 2015. 被国际半导体行业著名杂志《Semiconductor Today》作为GaN 功率半导体技术重要研究进展进行专题报道。 ★ Qi Zhou *, Bowen Chen, Yang Jin, Sen Huang, Ke Wei, Xinyu Liu, Xu Bao, Jinyu Mou, and Bo Zhang, "High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs with 626MW/cm2 Figure of Merit," IEEE Trans. on Electron Devices, vol. 62, no. 3, pp: 776-781, Mar. 2015.★ Qi Zhou *, Shu Yang, Wanjun Chen, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications," Solid-State Electronics, vol. 91, pp: 19-23, 2014. ★ Qi Zhou *,, Wanjun Chen, Shenghou Liu, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement," IEEE Trans. on Electron Devices, vol. 60, no. 3, pp: 1075-1081, Mar. 2013. ★ Qi Zhou *,, W. Chen, C. Zhou, B. Zhang and K.J. Chen, "High sensitivity AlGaN/GaN lateral field-effect rectifier for zero-bias microwave detection," IET Electronics Lett., vol. 49, no. 22, pp: 1391-1393, Oct. 2013.★ Qi Zhou *,, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance," Jpn. J. Appl. Phys. vol. 51, 04DF02, Apr. 2012.★ Qi Zhou *,, Hongwei Chen, Chunhua Zhou, Z. H. Feng, S. J. Cai, and Kevin J. Chen, "Schottky Source/Drain InAlN/AlN/GaN MISHEMT with Enhanced Breakdown Voltage," IEEE Electron Device Lett., vol. 33, no. 1, pp: 19-21, Jan. 2012.★ Shu Yang, Sen Huang, Hongwei Chen, Chunhua Zhou, Qi Zhou, Michael Schnee, Qing-Tai Zhao, Jurgen Schubert, and Kevin J. Chen, "AlGaN/GaN MISHEMTs with High-k LaLuO3 Gate Dielectric," IEEE Electron Device Lett., vol. 33, no. 7, pp: 979-981, Jul. 2012.★ Hongwei Chen, Li Yuan, Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "Normally-off AlGaN/GaN power tunnel-junction FETs, " Phys. Status Solidi-C, vol. 9, no. 3-4, pp: 871-874, Mar. 2012.★ Li Yuan, Hongwei Chen, Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "Gate-Induced Schottky Barrier Lowering Effect in AlGaN/GaN Metal-2DEG Tunnel Junction Field Effect Transistor"IEEE Electron Device Lett., vol. 32, no. 9, pp: 1221-1223, Sep. 2011. ★ Qi Zhou *, King-Yuen Wong, Wanjun Chen, and Kevin J. Chen, "Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode," IEEE Microwave and Wireless Components Lett., vol. 20, no. 5, pp: 277-279, May. 2010.★ King-Yuen Wong, Wanjun Chen, Qi Zhou , and Kevin J. Chen, "Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications,"IEEE Trans. on Electron Devices, vol. 56, no. 12, pp: 2888-2894, Dec. 2009. ★ Qi Zhou *, Yang Jin, Xu Bao, Jingyu Mou, Bowen Chen, Yijun Shi, Zhaoyang Liu, Jian Li, Wanjun Chen, and Bo Zhang, "Over 1.1 kV Breakdown Voltage, Low Turn-on Voltage GaN-on-Si Power Diode with MIS-Gated Hybrid Anode," Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Hong Kong, China, May, 2015. (入选大会口头报告，GaN领域全球高校仅2篇入选，中国唯一)★ Qi Zhou *, Wanjun Chen, Shenghou Liu, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High Breakdown Voltage InAlN/GaN HEMTs Achieved by Schottky-Source Technology," Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Kanazawa, Japan., pp. 195-198, May. 2013. （GaN领域中国大陆首篇入选 论文）★ Jinhan Zhang, Sen Huang, Qi Zhou *, Xinhua Wang, Ke Wei, Guoguo Liu, Yingkui Zheng, Xiaojuan Chen, Xinyu Liu, Zhongjie Yu, Wanjun Chen, and Bo Zhang, "ON-State Breakdown Mechanism of GaN Power HEMTs," Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Hawaii, US., pp. 362-365, Jun. 2014. ★ Li Yuan, Hongwei Chen, Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "A Novel Normally-off GaN Power Tunnel Junction FET," Int. Symp. on Power Semicond. Devices & IC's (ISPSD), San Diego, US., pp. 276-279, May. 2011.★ Qi Zhou *, Sen Huang, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, Kevin J. Chen, "Schottky Source/Drain Al2O3/InAlN/GaN MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF Current Ratio," Int. Electon Device Meeting (IEDM), Washington, US., pp. 777-780, Dec. 2011.★ Kevin J. Chen, L. Yuan, M. J. Wang, H. Chen, S. Huang, Qi Zhou, C. Zhou, B. K. Li, and J. N. Wang, "Physics of Fluorine Plasma Ion Implantation for GaN Normally-off HEMT Technology," Int. Electon Device Meeting (IEDM), Washington, US., pp. 467-470, Dec. 2011.（Invited paper）

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专业研究方向： 专业名称 研究方向 招生类别
080900电子科学与技术 03微电子学与固体电子学 博士
085400电子信息 03微电子学与固体电子学 博士
080900电子科学与技术 03微电子学与固体电子学 硕士
085400电子信息 05集成电路工程 硕士

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