黄火林
院系：物理与光电工程学院
办公电话：
电子信箱：hlhuang@dlut.edu.cn
更新时间：2015-9-8
其他专业：微电子学与固体电子学



个人简介
1982年生于福州。2006年本科和2011年博士毕业于厦门大学物理系，师从半导体探测器领域专家吴正云教授，从事二氧化钛和碳化硅等宽禁带半导体材料生长和紫外光电探测器的研制工作。2011年至2014年末在新加坡国立大学（NUS）电机工程系（ECE）从事博士后研究工作，负责带领多名博士生开展《高压高功率硅衬底氮化镓材料功率电子器件技术研发》项目（750W人民币），该项目获得+5V阈值电压和超过1200V击穿电压性能的常关型功率器件，以及无金工艺下+2V阈值电压和600V击穿电压的常关型功率器件，项目指标达到国际先进水平。项目结题后，于2014年12月被大连理工大学聘为副教授引进物理与光电工程学院，主要从事氮化镓材料外延生长和功率电子器件的研发工作。

社会兼职
美国电气电子工程师学会(IEEE)会员
IEEE EDL, TED, APL, ACS Applied Materials & Interfaces, Nanotechnology, ECS Journal of The Electrochemical Society, International Journal of Electrical Power and Energy Systems等国际学术期刊的评审专家


研究领域（研究课题）
1、氮化镓材料外延生长与功率电子器件的制作及可靠性研究
2、氮化镓功率器件芯片与集成电路设计制作
3、功率电子器件的仿真模拟

硕博研究方向
氮化物半导体材料和功率电子器件

出版著作和论文
代表性期刊论文：
[1] Huolin Huang, Yung C. Liang, Ganesh S. Samudra, Ting-Fu Chang, and Chih-Fang Huang, “Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs”, IEEE Trans. Power Electron. 29, 2164-2173 (2014).
[2] Huolin Huang, Yung C. Liang, Ganesh S. Samudra, and Cassandra Low Lee Ngo, “Au-Free Normally-off AlGaN/GaN-on-Si MIS-HEMTs using Combined Partially Recessed and Fluorinated Trap-Charge Gate Structures”, IEEE Electron Device Lett. 35, 569 (2014).
[3] Huolin Huang, Yannan Xie, Zhifeng Zhang, Feng Zhang, Qiang Xu, Zhengyun Wu, “Growth and fabrication of sputtered TiO2 based ultraviolet detectors”, Appl. Surf. Sci. 293, 248-254 (2014).
[4] Huolin Huang, Yannan Xie, Weifeng Yang, Feng Zhang, Jiafa Cai, and Zhengyun Wu, “Low-Dark-Current TiO2 MSM UV Photodetectors with Pt Schottky Contacts”, IEEE Electron Device Lett. 32, 530 (2011).
[5] Huolin Huang, Weifeng Yang, Yannan Xie, Xiaping Chen, and Zhengyun Wu, “Metal-semiconductor-metal ultraviolet photodetectors based on TiO2 films deposited by radio frequency magnetron sputtering”, IEEE Electron Device Lett. 31, 588 (2010).

代表性国际学术会议论文：
[1] Huolin Huang, Yun-Hsiang Wang, Yung C. Liang, Ganesh S. Samudra, Hongwei Liang, Xiaochuan Xia, and Guotong Du, "Formation of Gate Structure by Multiple Fluorinated Dielectric Layers on Partially Recessed Barrier for High Threshold Voltage AlGaN/GaN Power HEMTs", 11th International Conference on Nitride Semiconductors (ICNS-11), 2015, August 30 - September 4, Beijing, China.
[2] Huolin Huang, Yun-Hsiang Wang, Yung C. Liang, Ganesh S. Samudra, Chih-Fang Huang, and Wei-Hung Kuo, “5V High Threshold Voltage Normally-off MIS-HEMTs with Combined Partially Recessed and Multiple Fluorinated-Dielectric Layers Gate Structures”, 46th SSDM 2014, September 8-11, 2014, Ibaraki, Japan.
[3] Huolin Huang, Yung C. Liang, Ganesh S. Samudra, and Chih-Fang Huang, “Design of Novel Normally-off AlGaN/GaN HEMTs with Combined Gate Recess and Floating Charge Structures”, IEEE PEDS 2013, April 22-25, 2013, Kitakyushu, Japan.
[4] Huolin Huang, Yung C. Liang, and Ganesh S. Samudra, “Theoretical Calculation and Efficient Simulations of Power Semiconductor AlGaN/GaN HEMTs”, IEEE EDSSC 2012, December 3-5, 2012, Chulalongkorn University, Bangkok, Thailand.
[5] Huolin Huang, Yung C. Liang, Ganesh S. Samudra, Yuling Li, and Yee-Chia Yeo, “Modelling and Simulations on Current Collapse in AlGaN/GaN Power HEMTs”, SISPAD 2012, September 5-7, 2012, Denver, CO, USA.