齐景山导师个人档案
姓名：
齐景山

性别：
男

出生年月：
1981.04

学位：
博士

职务：
无

职称：
副教授

Email：
qijingshan@jsnu.edu.cn

联系电话：


专业与主要研究方向：

1.凝聚态物理：低维材料（包括各种纳米结构）的电子结构及其调控机制

教授课程：

1.热学
2.大学物理

研究生培养基础要求：

物理、化学、材料等相关专业的本科生均可报考。

个人教育简历：

2005.06获山东师范大学理学学士学位；
2011.06获南京航空航天大学凝聚态物理博士学位；
2009.09-2010.09在美国宾夕法尼亚大学交流学习；

个人工作简历：

2011.07 - 至今江苏师范大学副教授；
2015.09-2016.08 美国麻省理工学院 访问****；

近期主要主持的项目：

1.国家自然科学基金项目：“二维材料中谷与自旋自由度的耦合效应及其电磁调控(**)”，2017/01-2020/12，主持。
2.国家自然科学基金项目：“弹性应变下原子薄膜的电子结构和输运性质的理论和计算研究（**）”，2013/01-2015/12，主持。
3.江苏省高校自然科学基金项目“二硫化钼原子薄膜的电子结构和磁性质的研究（12KJB140005）”，2012/09-2014/12，主持。

代表性论文：


1.Jingshan Qi, Xiao Li, Xiaofeng Qian, Electrically controlled band gap and topological phase transition in two-dimensional multilayer germanane, Applied Physics Letters108(25), 253107 (2016).
2.Jingshan Qi，Xiaofang Chen，Kaige Hu and Ji Feng，Graphene-based half-metal and spin-semiconductor for spintronic application，Journal of Physics: Condensed Matter, 28(12),126004 (2016).
3.Sha Wu, Wengang Lu, Jingshan Qi, Spin-charge order and excitonic effects in sawtooth-like graphene nanoribbons, Physics Lettters A380(38), 3092 (2016).
4.Jingshan Qi,Xiao Li, Qian Niu and Ji Feng, Giant and tunable valley degeneracy splitting in MoTe₂, Physical Review B, 92(12), 121403(2015).
5.Xiaofang Chen, Jingshan Qiand Daning Shi, Strain-engineering of magnetic coupling in two-dimensional magnetic semiconductor CrSiTe3: competition of direct exchange interaction and superexchange interaction, Physics Lettters A, 379(1),60 (2015).
6.Baisheng Sa, Yanling Li, Zhimei Sun, Jingshan Qi, Cuilian Wen and Bo Wu, The electronic origin of shear-induced direct to indirect gap transition and anisotropy diminution in phosphorene, Nanotechnology,26(21), 215205 (2015).
7.Jingshan Qi, Xiao Li, Xiaofang Chen and Kaige Hu, Strain tuning of magnetism in Mn doped MoS2 monolayer, Journal of Physics: Condensed Matter,26(25), 256003 (2014).
8.Baisheng Sa, Yan-Ling Li, Jingshan Qi, Rajeev Ahuja, Zhimei Sun, Strain engineering for phosphorene: the potential application as a photocatalyst, The Journal of Physical Chemistry C, 118(46), 26560-26568 (2014).
9.Jingshan Qi,Xiao Li, Xiaofeng Qian,and Ji Feng, Bandgap engineering of rippled MoS2 monolayer under external electric field, Applied Physics Letters,102(17), 173112 (2013)
10.Jingshan Qi, Xiaofeng Qian, Liang Qi, Ji Feng, Daning Shi and Ju Li, Strain-Engineering of Band Gaps in Piezoelectric Boron Nitride Nanoribbons, Nano Letters, 12(3), 1224-1228 (2012).
11.Ji Feng, Wenbin Li, Xiaofeng Qian, Jingshan Qi, Liang Qi and Ju Li, Patterning of graphene, Nanoscale, 4(16), 4883-4899 (2012).
12.Jingshan Qi,Jianyu Huang, Ji Feng, Daning Shi and Ju Li, The Possibility of Chemically Inert, Graphene-Based All-carbon Electronic Devices with 0.8 eV Gap, ACS Nano,5(5), 3475-3482 (2011).
13.Hongxia Chen, Daning Shi and Jingshan Qi, Comparative Studies on The Magnetic Properties of ZnS Nanowires Doped with Transition Metal Atoms,Journal of Applied Physics, 109(8), 084338 (2011).
14.Caixia Kan, Changshun Wang, Hongchen Li, Jingshan Qi, Jiejun Zhu, Zhaosheng Li and Daning Shi, Gold microplates with well-defined shapes, Small, 6, 1768-1775 (2010).
15.Jingshan Qi,Hailin Yu, Xufan Jiang and Daning Shi, First principles study of Electronic Strucutre and Magnetic Properties of Half-Metallic Full-Heusler Alloys Co2MnSi and Co2FeSi, International Journal of Modern Physics B,24(8), 967-978 (2010)
16.Jingshan Qi, Daning Shi, Hongxia Chen and Baolin Wang, Stuctures and Electronic Properties of The Bi-Sb Superlattice Nanowires and Core-Shell Structural Bi/Bb Nanowires,The Journal of Physical Chemistry C, 113(26), 11358-11365 (2009).
17.Jingshan Qi, Daning Shi, Baolin Wang, Different Mechanical Properties of The Pristine and Hydrogen Passivated ZnO Nanowires, Computational Materials Science,46(2), 303-306 (2009).
18.Jingshan Qi, Daning Shi and Jianming Jia, First-Principles Studies of The Electronic and Mechanical Properties of ZnO Nanobelts with Different Dominant Surfaces, Nanotechnology,19(43), 435707 (2008).
19.Jingshan Qi, Daning Shi, Jijun Zhao and Xuefan Jiang, Stable Structures and Electronic Properties of The Oriented Bi Nanowires and Nanotubes from First-Principle Calculations, The Journal of Physical Chemistry C,112(29), 10745-10753 (2008).
20.Jingshan Qi, Daning Shi and Xuefan Jiang, The Structures and Electronic Properties of Double-Wall Bismuth Nanotubes from First-Principle Calculations, Chemical Physics Letters,460(1-3), 266-271 (2008).