性 别: 男
出生年月: 1988.10
最高学历、学位: 博士研究生、博士
职 称: 副教授
职 务:
电子邮箱: jyzhang@usts.edu.cn
一、基本情况：

苏州科技大学物理科学与技术学院副教授。2011.09—2016.06复旦大学物理学系凝聚态物理专业（硕博连读），导师为杨中芹教授。2016年6月获得理学博士学位。2018年被遴选为硕士生导师。
二、主要研究领域及学术成就：

主要采用基于密度泛函理论（DFT）的第一性原理计算、紧束缚物理模型、kp模型等方法研究：（1）新奇材料的电子结构特性；（2）拓扑量子态；（3）拓扑绝缘体；（4）表面界面物理及异质结；（5）二维材料；（6）磁性材料等。主持国家自然科学基金青年基金项目1项（2020.01-2022.12）、国家自然科学基金理论物理专款项目1项（2018.01-2018.12）、江苏省自然科学基金青年基金项目1项（2017.7-2020.6）、江苏省高等学校自然科学研究面上项目1项（2017.9-2019.8）、国家重点实验室开放课题1 项（2018.10-2020.9）。在Phys. Rev. B、Nano Lett、NPG Asia Materials、npj Quantum Materials、Nanoscale、Appl. Phys. Lett.、J. Chem. Phys.、Phys. Chem. Chem. Phys.等期刊发表SCI学术论文20余篇，论文被引用500余次。
三、代表性科研成果：
1. Jiayong Zhang*, Bao Zhao, Chunlan Ma, and Zhongqin Yang, Bipolar ferromagnetic semiconductors and doping-tuned room-temperature half-metallicity in monolayer MoX₃ (X = Cl, Br, I): An HSE06 study. Phys. Rev. B 103, 075433 (2021).
2. Jiayong Zhang*, Bao Zhao, Tong Zhou, Yang Xue, Yu Fang, Chunlan Ma, and Zhongqin Yang*, Topologically trivial states induced by strong spin-orbit coupling and Chern insulators in doped X(C₂₁N₃H₁₅) (X = Ta, Hf) metal-organic frameworks. Phys. Rev. B 99, 035409 (2019).
3. Jiayong Zhang*, Bao Zhao, Chunlan Ma, and Zhongqin Yang, Prediction of intrinsic two-dimensional non-Dirac topological insulators in triangular metal-organic frameworks. Appl. Phys. Lett. 114, 043102 (2019).
4. Jiahui Qian, Jiayong Zhang*, QiXing Wu, and Zhenghao Lin, Robust quantum anomalous Hall effect with electrically tunable band gap in Ta-decorated silicene. Appl. Phys. Lett. 114, 053105 (2019).
5. Jiayong Zhang, Bao Zhao, Yang Xue, Tong Zhou, and Zhongqin Yang*, Coupling effect of topological states and Chern insulators in two-dimensional triangular lattices. Phys. Rev. B 97, 125430 (2018).
6. Jiayong Zhang*, Bao Zhao, Tong Zhou, Yang Xue, Chunlan Ma, and Zhongqin Yang*, Strong magnetization and Chern insulators in compressed graphene/CrI₃ van der Waals heterostructures. Phys. Rev. B 97, 085401 (2018).
7. Jiayong Zhang, Bao Zhao, Tong Zhou, and Zhongqin Yang*, Quantum anomalous Hall effect in real materials. Chin. Phys. B 25(11), 117308 (2016) (Invited Review).
8. Jiayong Zhang, Bao Zhao, Yugui Yao, and Zhongqin Yang*, Robust quantum anomalous Hall effect in graphene-based van der Waals heterostructures. Phys. Rev. B 92, 165418 (2015).
9. Jiayong Zhang, Bao Zhao, Yugui Yao, and Zhongqin Yang*, Quantum anomalous Hall effect in graphene-based heterostructure. Sci. Rep. 5, 10629 (2015).
10. Jiayong Zhang, Bao Zhao, and Zhongqin Yang*, Abundant topological states in silicene with transition metal adatoms. Phys. Rev. B 88, 165422 (2013).
11. Yue Li, Jiayong Zhang, Bao Zhao, Yang Xue, and Zhongqin Yang*, Constructive coupling effect of topological states and topological phase transitions in plumbene. Phys. Rev. B 99, 195402 (2019).
12. Tong Zhou, Jiayong Zhang, Hua Jiang, Igor Zutic, and Zhongqin Yang*, Giant spin-valley polarization and multiple Hall effect in functionalized bismuth monolayers. npj Quantum Materials 3, 39 (2018).
13. Ningbo Li, Jiayong Zhang, Yang Xue, Tong Zhou, and Zhongqin Yang*, Large valley polarization in monolayer MoTe2 on a magnetic substrate. Phys. Chem. Chem. Phys. 20, 3805 (2018).
14. Yang Xue, Jiayong Zhang, Bao Zhao, Xinyuan Wei, and Zhongqin Yang*, Non-Dirac Chern insulators with large band gaps and spin-polarized edge states. Nanoscale 10, 8569 (2018).
15. Yang Xue, Bao Zhao, Yan Zhu, Tong Zhou, Jiayong Zhang, Ningbo Li, Hua jiang, and Zhongqin Yang*, Novel Chern insulators with half-metallic edge states. NPG Asia Materials 10, 467 (2018).
16. Xinyuan Wei, Bao Zhao, Jiayong Zhang, Yang Xue, Yun Li, and Zhongqin Yang*, Chern insulators without band inversion in MoS₂ monolayers with 3d adatoms. Phys. Rev. B 95, 075419 (2017).
17. Tong Zhou, Jiayong Zhang, Yang Xue, Bao Zhao, Huisheng Zhang, Hua Jiang*, and Zhongqin Yang*, Quantum spin-quantum anomalous Hall effect with tunable edge states in Sb monolayer-based heterostructures. Phys. Rev. B 94, 235449 (2016).
18. Huisheng Zhang, Tong Zhou, Jiayong Zhang, Bao Zhao, Yugui Yao, and Zhongqin Yang*, Quantum anomalous Hall effect in stanene on a nonmagnetic substrate. Phys. Rev. B 94, 235409 (2016).
19. Huisheng Zhang, Jiayong Zhang, Bao Zhao, Tong Zhou, and Zhongqin Yang*, Quantum anomalous Hall effect in stable dumbbell stanine. Appl. Phys. Lett. 108, 082104 (2016).
20. Tong Zhou, Jiayong Zhang, Bao Zhao, Huisheng Zhang, and Zhongqin Yang*, Quantum spin-quantum anomalous Hall insulators and topological transitions in functionalized Sb(111) monolayers. Nano Lett. 15, 5149 (2015).
21. Xinyuan Wei, Jiayong Zhang, Bao Zhao, Yan Zhu, and Zhongqin Yang*, Ferromagnetism in Fe-doped Bi₂Se₃ topological insulators with Se vacancies. Phys. Lett. A 379, 415 (2015).
22. Bao Zhao, Jiayong Zhang, Wanxiang Feng, Yugui Yao, and Zhongqin Yang*, Quantum spin Hall and Z₂ metallic states in an organic material. Phys. Rev. B 90, 201403(R) (2014).
23. Bao Zhao, Jiayong Zhang, Yicheng Wang, and Zhongqin Yang*, Quantum valley Hall states and topological transitions in Pt (Ni, Pd)-decorated silicene: A first-principles study. J. Chem. Phys. 141, 244701 (2014).