姓名：钱昕晔　
　职称： 助理研究员
　地址：江苏省镇江市学府路301号
　Telephone：
　Fax：
　E-mail：qianxinye207@163.com
　 研究方向：
锂硫电池硫基正极材料，锂硫电池新型隔膜改性
锂离子电池金属氧化物负极材料
硅基光电子材料

　 教育经历：
2008.9-2013.6 南京大学 硕博 博士学位
2002.9-2007.6 同济大学 本科 学士学位


　 教学经历：
材料工程导论（双语）

　 项　　目：
江苏大学高级人才启动基金（14JDG060），主持
江苏省博士后基金（**C），主持
长沙矿冶研究院创新项目子课题，主持
国家自然科学基金面上项目（批准号**），参与
国家自然科学基金面上项目（批准号**），参与
国家重点基础研究发展计划项目973计划（项目编号：2006CB932202），参与，已结题
国家重点基础研究发展计划项目973计划（项目编号：2010CB934402），参与，已结题

　 奖　　项：


　 学术组织和学术活动：


　 论文专著专利：
1. The Role of Nitridation of nc-Si Dots for Improving Performance of nc-Si Nonvolatile Memory
Xin-Ye Qian, Kun-Ji Chen*, Yue-Fei Wang, Xiao-Fan Jiang, Zhong-Yuan Ma, Zhong-Hui Fang, Jun Xu, Xin-Fan Huang
Journal of Non-Crystalline Solids 358, 2344-2347 (2012)
2. Room Temperature Multi NDR peaks in nc-Si Quantum Dots MOS Staking Structures for Multiple Value Memory and logics
Xin-Ye Qian, Kun-Ji Chen*, Jian Huang, Yue-Fei Wang, Zhong-Hui Fang, Jun Xu, Xin-Fan Huang
Chinese Physics Letters 30, 077303 (2013)
3. Performance improvement of nc-Si nonvolatile memory by novel design of tunnel and control layer
Xin-Ye Qian; Kun-Ji Chen; Zhong-Yuan Ma; Xian-Gao Zhang; Zhong-Hui Fang; Guang-Yuan Liu; Xiao-Fan Jiang; Xin-Fan Huang;
2010 10th IEEE International Conference of Solid-State and Integrated Circuit Technology (ICSICT), 944-946 (2010)
4. Multipeak Negative Differential Resistance Effects in Nanocrystalline Si Stacking MOS Structures
Xin-Ye Qian, Kun-Ji Chen*, Jian Huang, Yue-Fei Wang, Zhong-Hui Fang, Jun Xu, Xin-Fan Huang
2012 11th IEEE International Conference of Solid-State and Integrated Circuit Technology (ICSICT), S59_03 (2010)
5. Resistive Switching Mechanism in Silicon Highly Rich SiOx (x?< ?0.75) films based on silicon dangling bonds percolation model
Yuefei Wang, Xinye Qian, Kunji Chen, Zhonghui Fang, Wei Li, and Jun Xu
Appl. Phys. Lett. 102, 042103 (2013)
6. The Development of Nanometer Solid State Storage Memory
Kun-Ji Chen*, Xin-Ye Qian, Yue-Fei Wang, Zhong-Hui Fang, Xin-Fan Huang, Zhong-Yuan Ma
2012 11th IEEE International Conference of Solid-State and Integrated Circuit Technology (ICSICT), S59_01 (2010)
7. Fabrication of Silicon Highly-rich SiOx(x<0 .75) and its novel resistive switching behaviors
Yue-Fei Wang, Xin-Ye Qian, Kun-Ji Chen*, Zhong-Hui Fang, Wei Li, Jun Xu
2012 11th IEEE International Conference of Solid-State and Integrated Circuit Technology (ICSICT), S36_02 (2012)
8. Coulomb oscillations effect in dual gate controlled silicon nanowire
Zhang XG , Fang ZH, Chen KJ, Qian XY, Liu GY, Xu J, Huang XF, He F
ACTA PHYSICA SINICA 60, (2011)
9. Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment
Zhang XG , Fang ZH, Chen KJ, Qian XY, Liu GY, Xu J, Huang XF, et al.
Chinese Physics Letters 27, 087301 (2010)
10. Observation of Coulomb Oscillations with Single Dot Characteristics in Heavy Doped Ultra Thin SOI Nanowires
Fang ZH, Zhang XG, Chen KJ, Qian XY, Xu J, Huang XF, He F
Chinese Physics Letters 27, 057304 (2010)