王中强
东北师范大学物理学院
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职　　称：教授
研究方向：阻变式信息存储器件；忆阻器神经突触仿生研究
办公电话：**
办公地点：逸夫科技馆538，wangzq752@nenu.edu.cn
电子邮件：wangzq752@nenu.edu.cn



个人简历
王中强，凝聚态物理专业博士，教授，博士生导师。2013年毕业于于东北师范大学，获得凝聚态物理博士学位。2014年至2016年在意大利米兰理工大学进行博士后研究。主要研究方向为阻变式信息存储器件及忆阻器仿生突触研究。主持国家自然科学基金青年项目及面上项目，吉林省科技厅青年项目，东北师范大学校内项目，参与多项国家重大基金。博士论文获得2014年吉林省优秀博士论文。研究成果发表在Adv. Funct. Mater、Nanoscale、Appl. Phys. Lett、IEEE TED、IEEE EDL等国际著名杂志上，共30余篇，申请/授权发明专利6项。忆阻器在大数据存储及人工智能方面具有极大的发展潜力。欢迎有志于研究信息存储器件及忆阻器人工突触仿生的研究生加入我们的团队！科研方向：阻变式信息存储器件忆阻器神经突触仿生研究教育及工作经历：2004.09-2008.07 东北师范大学物理学院,物理学,学士2008.09-2013.06 东北师范大学物理学院,凝聚态物理，博士，导师:刘益春/徐海阳2013.08-2016.04 东北师范大学，物理学院，讲师2014.02-2016.02 意大利米兰理工大学,生物工程与电子信息系,博士后，合作导师：Daniele Ielmini2016.07-2019.06 东北师范大学，物理学院，副教授2019.06-至今东北师范大学，物理学院，教授学生培养：丁文涛（硕），研究生国家奖学金；王微（硕），校长奖学金；任衍允（博），校长奖学金；...研究成果：1.发表论文（第一作者及通讯作者）2019年：（1）Yanyun Ren, Hanlu Ma, Wei Wang, Zhongqiang Wang,* Haiyang Xu,* Xiaoning Zhao, Weizhen Liu, Jiangang Ma, and Yichun Liu, Cycling-induced Degradation of Organic–Inorganic Perovskite-based Resistive Switching Memory, Advanced Materials Technologies,2019, 4, **(扉页文章).(2)Jiaqi Xu, Xiaoning Zhao*, Zhongqiang Wang, Haiyang Xu*, Junli Hu, Jiangang Ma, and Yichun Liu, Biodegradable Natural Pectin-Based Flexible Multilevel Resistive Switching Memory for Transient Electronics, Small. 2019, 15, **.(3)Ya Lin, Cong Wang, Yanyun Ren, Zhongqiang Wang*, Haiyang Xu*, Xiaoning Zhao, Jiangang Ma, and Yichun Liu, Analog–Digital Hybrid Memristive Devices for Image Pattern Recognition with Tunable Learning Accuracy and Speed, Small Methods. 2019, **.(4)Xiaoning Zhao, Zhongqiang Wang*, Ya Lin, Haiyang Xu*, and Yichun Liu, Resistive switching performance improvement of amorphous carbon-based electrochemical metallization memory via current stressing, Appl. Phys. Lett. 2019, 115, 073501. (5)Wei Wang, Jiaqi Xu, Hanlu Ma, Xiaoning Zhao*, Ya Lin*, Cen Zhang, Zhongqiang Wang, Haiyang Xu, and Yichun Liu, Insertion of Nanoscale AgInSbTe layer between the Ag electrode and the CH3NH3PbI3 electrolyte layer enabling enhanced multilevel memory, ACS Appl. Nano Mater, 2019, 2, 307.....2018年：(1)Meng Qi, Liang Bai, Haiyang Xu, * Zhongqiang Wang,* Zhenhui Kang, Xiaoning Zhao, Weizhen Liu, Jiangang Ma and Yichun Liu, Oxidized carbon quantum dots-graphene oxide nanocomposites for improving data retention of resistive switching memory, J. Mater. Chem.C, 2018, 2018, 6, 2026(2)Yanyun Ren, Valerio Milo, Zhongqiang Wang*, Haiyang Xu*, Daniele Ielmini*, Xiaoning Zhao,Yichun Liu, Analytical modeling of organic?inorganic CH?NH?PbI? perovskite resistive switching and its application for neuromorphic recognition,Adv. Theory Simul. 2018, 1, ** （正封面文章）(3)Ye Tao, Wentao, Ding,Zhongqiang Wang*, Haiyang Xu*, Xiaoning Zhao, Xuhong Li, Weizhen Liu, Jiangang Ma, Yichun Liu Improved switching reliability achieved in HfOx based RRAM with mountain-like surface-graphited carbon layer, Applied Surface Science, 2018, 440, Pages 107-112(4)Kaixi Shi, Zhongqiang Wang(共同一作)， Haiyang Xu*，Zhe Xu， Xiaohan Zhang， Xiaoning Zhao, Weizhen Liu, Guochun Yang, Yichun Liu, Complementary Resistive Switching Observed in Graphene Oxide-Based Memory Device, IEEE Electron Device Letters, 39, 4, 488 - 491， 2018(5) Ye Tao, Xuhong Li, Haiyang Xu*, Zhongqiang Wang*, Wentao Ding, Weizhen Liu, Jiangang Ma and Yichun Liu, Improved uniformity and endurance through supression of filiament overgrowth in electrochemical metallization memory with AgInSbTe buffer layer, IEEE Journal of the Electron Devices Society, 2018,6(1),714-720.(6)Xiaoning Zhao, Zeying Fan, Haiyang Xu,* Zhongqiang Wang,* Jiangang Ma, Yichun Liu，Reversible Alternation between Bipolar and Unipolar Resistive Switching in Ag/MoS2/Au Structure for Multilevel Flexible Memory, Journal of Materials Chemistry C, 2018. 6, 7195-7200(热点文章，内封面)(7)Xiaoning Zhao, Zhongqiang Wang (共同一作), Yu Xie, Haiyang Xu,* Jiaxue Zhu, Xintong Zhang, Weizhen Liu, Guochun Yang, Jiangang Ma, Yichun Liu*，Photocatalytic Reduction of Graphene Oxide-TiO2 Nanocomposites for Improving Resistive Switching Memory Behaviors，SMALL, 2018， 14,** (封面文章)（8）Hanlu Ma, Wei Wang,Haiyang Xu*, Zhongqiang Wang*, Ye Tao, Peng Chen, Weizhen Liu, Xintong Zhang, Jiangang Ma and Yichun Liu, Interface-state Induced Negative Differential Resistance Observed in Hybrid Perovskite Resistive Switching Memory, ACS Applied Materials & Interfaces,2018,10, 25, 21755-21763（9）Meng Qi，YeTao，ZhongqiangWang*，HaiyangXu*，XiaoningZhao，WeizhenLiu，JiangangMa，YichunLiu，Highly uniform switching of HfO2-x based RRAM achieved through Ar plasma treatment for low power and multilevel storage，Applied Surface Science，458, 15(2018), Pages 216-221（10）Wentao Ding,Ye Tao, Xuhong Li，Ya Lin,Zhongqiang Wang*,Haiyang Xu*, Xiaoning Zhao,Weizhen Liu,Jiangang Ma ,Yichun Liu，Graphite microislands Prepared for Reliability Improvement of Amorphous Carbon Based resistive switching memory, Phys. Status Solidi RRL 2018, **（11）Ya Lin, Tao Zeng, Haiyang Xu*, Zhongqiang Wang*, Xiaoning Zhao, Weizhen Liu, Jiangang Ma and Yichun Liu, Transferable and Flexible Artificial Memristive Synapse Based on WOx Schottky Junction on Arbitrary Substrates, Advanced Electronic Materials, 2018, DOI:10.1002/aelm.（12）Meng Qi, Xue Zhang, Liu Yang, Zhongqiang Wang, Haiyang Xu, Weizhen Liu, Xiaoning Zhao, and Yichun Liu，Intensity-modulated LED achieved through integrating p-GaN/n-ZnO heterojunction with multilevel RRAM，Appl. Phys. Lett. 113, 223503 (2018);2017年：(1)Y. Tao, X. H. Li, Z. Q. Wang*, H. Y. Xu*, W.T. Ding, J. G. Ma, Y. C. Liu, Improved resistive switching reliability by using dual-layer nanoporous carbon structure, Appl. Phys. Lett., 2017, 111, 183504.(2)K. X. Shi, H. Y. Xu*, Z. Q. Wang*, X. N. Zhao, W. Z. Liu, J. G. Ma, Y. C. Liu, Improved performance of Ta2O5-x resistive switching memory by Gd-doping: Ultralow power operation, good data retention, and multilevel storage, Appl.Phys.Lett., 2017, 111, 223505 (3)X. N. Zhao, H. Y. Xu, Z. Q. Wang*, Z Xu, C. Zhang, G.R. Wang, W. Z. Liu, J. G. Ma, Y. C. Liu, “Sp2 clustering-induced improvement of resistive switching uniformity in Cu/amorphous carbon/Pt electrochemical metallization memory” J. Mater. Chem.C. 5, 5420 (2017).(4)Y. Lin, H. Y. Xu, Z. Q. Wang*, T. Cong, W. Z. Liu, H. L. Ma, Y. C. Liu, “Transferable and flexible resistive switching memory devices based on PMMA films with embedded Fe3O4 nanoparticles” Appl. Phys. Lett. 110, 193503 (2017)(5)J. X. Zhu, W. L. Zhou, Z. Q. Wang*, H. Y. Xu *, Y. Lin, W. Z. Liu, J. G. Ma and Y. C. Liu, “Flexible, transferable and conformal egg albumen based resistive switching memory devices” RSC Adv. 7, 32114 (2017).(6)L. Zhang, H. Y. Xu, Z. Q. Wang*, W. Z. Liu, K. X. Shi, Y. Lin, Y. C. Liu. “p-NiO/n+-Si single heterostructure for one diode-one resistor memory applications” J. Alloy. Compd, 721, 520 (2017).

社会兼职




获奖情况


2014年吉林省优秀博士论文


教学信息


大学物理电学实验 本科生专业基础课。


科研信息


科研项目情况：1. 国家自然科学基金面上项目, 基于忆阻器nT1R构架实现多级阻态渐变调控的人工神经突触器件研究，63万，2018.01-2021.12，主持。2. 国家自然科学基金面上项目, 基于氧化物/贵金属的光电忆阻效应研究及光门控人工突触器件，63万，2020.01-2023.12，主持。3. 国家自然科学基金重点项目,氧化物忆阻材料与人工器件, 310万 2018.01-2022.12, 参加。4. 东北师范大学青年骨干培育基金, 50万, 1T1R结构忆阻器件构筑及其应用研究, 2016.04-2017.11, 主持。5. 国家自然科学基金青年项目, 界面调控对氧化物基忆阻器动态电学行为的影响及其神经突触仿生研究, 26万，2015.01-2017.12，主持。6. 吉林省科技项目青年项目, 基于p-CuAlO2/ n-ZnO异质结空间电荷区宽度调制的新型忆阻器件及其神经突触仿生研究,5万，2014.01-2016.12，主持。研究成果：1.发表论文（第一作者及通讯作者）2018年：(1)Meng Qi, Liang Bai, Haiyang Xu, * Zhongqiang Wang,* Zhenhui Kang, Xiaoning Zhao, Weizhen Liu, Jiangang Ma and Yichun Liu, Oxidized carbon quantum dots-graphene oxide nanocomposites for improving data retention of resistive switching memory, J. Mater. Chem.C, 2018, 2018, 6, 2026(2)Yanyun Ren, Valerio Milo, Zhongqiang Wang*, Haiyang Xu*, Daniele Ielmini*, Xiaoning Zhao,Yichun Liu, Analytical modeling of organic?inorganic CH?NH?PbI? perovskite resistive switching and its application for neuromorphic recognition, Advanced Theory and Simulations, 2018, adts.R1(3)Ye Tao, Wentao, Ding,Zhongqiang Wang*, Haiyang Xu*, Xiaoning Zhao, Xuhong Li, Weizhen Liu, Jiangang Ma, Yichun Liu Improved switching reliability achieved in HfOx based RRAM with mountain-like surface-graphited carbon layer, Applied Surface Science, 2018, 440, Pages 107-112(4)Kaixi Shi, Zhongqiang Wang(共同一作)， Haiyang Xu*，Zhe Xu， Xiaohan Zhang， Xiaoning Zhao, Weizhen Liu, Guochun Yang, Yichun Liu, Complementary Resistive Switching Observed in Graphene Oxide-Based Memory Device, IEEE Electron Device Letters, 39, 4, 488 - 491……2017年：(1)Y. Tao, X. H. Li, Z. Q. Wang*, H. Y. Xu*, W.T. Ding, J. G. Ma, Y. C. Liu, Improved resistive switching reliability by using dual-layer nanoporous carbon structure, Appl. Phys. Lett., 2017, 111, 183504.(2)K. X. Shi, H. Y. Xu*, Z. Q. Wang*, X. N. Zhao, W. Z. Liu, J. G. Ma, Y. C. Liu, Improved performance of Ta2O5-x resistive switching memory by Gd-doping: Ultralow power operation, good data retention, and multilevel storage, Appl.Phys.Lett., 2017, 111, 223505 (3)X. N. Zhao, H. Y. Xu, Z. Q. Wang*, Z Xu, C. Zhang, G.R. Wang, W. Z. Liu, J. G. Ma, Y. C. Liu, “Sp2 clustering-induced improvement of resistive switching uniformity in Cu/amorphous carbon/Pt electrochemical metallization memory” J. Mater. Chem.C. 5, 5420 (2017).(4)Y. Lin, H. Y. Xu, Z. Q. Wang*, T. Cong, W. Z. Liu, H. L. Ma, Y. C. Liu, “Transferable and flexible resistive switching memory devices based on PMMA films with embedded Fe3O4 nanoparticles” Appl. Phys. Lett. 110, 193503 (2017)(5)J. X. Zhu, W. L. Zhou, Z. Q. Wang*, H. Y. Xu *, Y. Lin, W. Z. Liu, J. G. Ma and Y. C. Liu, “Flexible, transferable and conformal egg albumen based resistive switching memory devices” RSC Adv. 7, 32114 (2017).(6)L. Zhang, H. Y. Xu, Z. Q. Wang*, W. Z. Liu, K. X. Shi, Y. Lin, Y. C. Liu. “p-NiO/n+-Si single heterostructure for one diode-one resistor memory applications” J. Alloy. Compd, 721, 520 (2017).2016年：(1)Z. Q. Wang, S. Ambrogio, S. Balatti, S. Sills, N. Ramaswamy, D. Ielmini. “Postcycling Degradation in Metal-Oxide BipolarResistive Switching Memory”, IEEE TED, 63, 4279 (2016).(2)X. N. Zhao, Z. Q. Wang*, H. Y. Xu, Y. Xie, H. L. Ma, J. G. Ma, Y. C. Liu. “Reliability Improvement of Amorphous Carbon Based Resistive Switching Memory by Inserting Nanoporous Layer” IEEE EDL. 37, 1430 (2016).(3)X. N. Zhao, M. Y. Li, H. Y. Xu, Z. Q. Wang*, C. Zhang, W. Z. Liu, J. G. Ma, Y. C. Liu, Forming-free electrochemical metallization resistive memory devices based on nanoporous TiOxNy thin film, J. Alloy. Compd, 656, 612 (2016).(4)H. L. Ma, Z. Q. Wang*, H. Y. Xu, L. Zhang, X. N. Zhao, M. S. Han, J. G. Ma, Y. C. Liu, “Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments” Chin. Phys. B, 25, 127303 (2016).(5)L. Zhang, H. Y. Xu, Z. Q. Wang*, H. Yu, J. G. Ma, Y. C. Liu, “Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device” Appl. Surf. Sci. 360, 338 (2016).2015年：(1)Z. Q. Wang, S. Ambrogio, S. Balatti, S. Sills, A. Calderoni, N. Ramaswamy, D. Ielmini “Cycling-induced degradation of metal-oxide resistive switching memory (RRAM)” IEDM Tech. Dig., 173-176, (2015).(2)Z. Q. Wang, S. Ambrogio, S. Balatti, and D. Ielmini,A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems, Frontiers in Neuroscience 8, 438 (2015).(3)Z. Q. Wang, K. D. Zhao, H. Y. Xu*, L. Zhang, J. G. Ma, Y. C. Liu*, Improvement of resistive switching memory achieved by using arc-shaped bottom electrode, Applied Physics Express, 8, 014101,(2015) .(4)Z. Q. Wang, H. Y. Xu, L. Zhang, X. N. Zhao, J. G. Ma, and Y. C. Liu, Effect of reset voltage polarity on the resistive switching region of nonpolar memories, Phys. Status Solidi A, 212, 2255 (2015).(5)L. Zhang, H. Y. Xu, Z. Q. Wang*, X. N. Zhao, J. G. Ma, Y. C. Liu, Improved resistive switching characteristics by introducing Ag-nanoclusters in amorphous-carbon memory, Mater. Lett, 154, 98 (2015).(6)Z. Q. Wang, H. Y. Xu*, X. H. Li, H. Yu, Y. C. Liu*, X. J. Zhu, Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor, Advanced Functional Materials, 22(13), 2759, (2012).(7) Z. Q. Wang, H. Y. Xu*, L. Zhang, X. H. Li, J. G. Ma, X. T. Zhang, Y. C. Liu*, Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters, Nanoscale5, 4490 (2013). (8)Z. Q. Wang, H. Y. Xu*, X. H. Li, X. T. Zhang, Y. X. Liu, Y. C. Liu*, Flexible resistive switching memory device based on amorphous InGaZnO film with excellent mechanical endurance, IEEE Electron Device Letters, 32(10), 1442, (2011). (9)Z. Q. Wang, X. H. Li, H. Y. Xu, W. Wang, H. Yu, X. T. Zhang, Y. X. Liu*, Y. C. Liu, Effects of compliance currents on the formation and rupture of conducting filaments in unipolar resistive switching of CoO film, Journal of Physics D-Applied Physics, 43(38), 385105, (2010). 2.发明专利：(1)徐海阳、王中强、张磊、于浩、李兴华、刘益春，基于非晶多元金属氧化物的柔性电阻式非易失性存储器，2011.8，中国，3.0(2)徐海阳、张磊、王中强、于浩、刘益春，基于PN异质结构的忆阻器及其制备方法，2014.2，中国，3.7(3)Daniele Ielmini, ZhongQiang Wang (25%), Simone Balatti, Stefano Ambrogio,“New artificial synapse for neuromorphic circuits”, U.S. Patent application,2015.3.(4) 徐海阳，王中强，黎旭红，陶冶，刘益春，一种抑制银导电通道过量生长的阻变存储器及其制备方法，申请号：8.X(5) 徐海阳，王中强，朱佳雪，谢瑜，黎旭红，刘益春, 一种基于氧化石墨烯的高稳定性阻变存储器，申请号：3.6(6) 徐海阳，王中强，陶冶，黎旭红，刘益春，一种双层多孔结构非晶碳材料的阻变存储器及其制备方法，申请号：2.0


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