Johnny Kin On SIN
單建安
PhD in Electrical Engineering
University of Toronto, 1988

Professor
Department of Electronic and Computer Engineering



(852) 2358 7052
eesin@ust.hk
Room 2415
Personal Web

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ORCID
0000-0003-1916-0699

Scopus ID
7103312667




Research Interest Publications Projects RPG Supervision Space used




Research Interest

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Microelectronics
Nanoelectronic design
Fabrication technology
Power semiconductor devices and ICs



Publications

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All Years 309 2022 0 2021 4 2020 5 2019 4 2018 5 2017 5 2016 286

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2021 4

A High-Efficiency Double-Side Silicon-Embedded Inductor for Integrated DC-DC Converter Applications
IEEE Transactions on Electron Devices, v. 68, (9), September 2021, article number 9511635, p. 4801-4804
Lv, Guangfu; Liao, Niteng; Ding, Yixiao; Fang, Xiangming; Bai, Feiming; Sin, Johnny Kin On; Wu, Rongxiang Article
Characterization of Al₂O₃/LaAlO₃/SiO₂ Gate Stack on 4H-SiC After Post-Deposition Annealing
IEEE Transactions on Electron Devices, v. 68, (4), April 2021, article number 9353391, p. 2133-2137
Huang, Linhua; Liu, Yong; Xiao, Chao; Ding, Yixiao; Peng, Xin; Onozawa, Yuichi; Tsuji, Takashi; Fujishima, Naoto; Sin, Johnny Kin On Article
Simulation Study of 4H-SiC High-k Pillar MOSFET with Integrated Schottky Barrier Diode
IEEE Journal of the Electron Devices Society, v. 9, September 2021, p. 951-957
Zheng, Ya Liang; Tang, Wing Man; Chau, Tony; Sin, Johnny Kin On; Lai, Peter T. Article
Low-Temperature Fabricated Amorphous Oxide Semiconductor Heterojunction Diode for Monolithic 3D Power Integration Applications
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452201, p. 283-286
Zhou, Xianda; Wang, Kai; Liu, Yang; Lu, Lei; Sin, Johnny Kin On Conference paper

2020 5

A New Fan-Out-Package-Embedded Power Inductor Technology
IEEE Electron Device Letters, v. 41, (2), February 2020, article number 8943300, p. 268-271
Ding, Yixiao; Fang, Xiangming; Wu, Rongxiang; Sin, Johnny Kin On Article
A Suspended Thick-Winding Inductor for Integrated Voltage Regulator Applications
IEEE Electron Device Letters, v. 41, (1), January 2020, article number 8902125, p. 95-98
Ding, Yixiao; Fang, Xiangming; Wu, Rongxiang; Guo, Qili; Sin, Johnny Kin On Article
A Trench-Field-Plate High-Voltage Power MOSFET
IEEE Transactions on Electron Devices, v. 67, (6), June 2020, article number 9090274, p. 2482-2488
Xiao, Chao; Yang, Wentao; Liu, Yong; Zhou, Xianda; Feng, Hao; Sin, Johnny Kin On Article
A New Double Trench, Buried-P JTE Edge Termination for 1200 V-class SiC Devices
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170165, p. 162-165
Liu, Yong; Feng, Hao; Zhou, Xianda; Huang, Linhua; Xiao, Chao; Peng, Xin; Sin, Johnny Kin On Conference paper
Fan-Out-Package-Embedded Coupled Inductors for Integrated Voltage Conversion
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170128, p. 356-359
Ding, Yixiao; Fang, Xiangming; Wu, Rongxiang; Sin, Johnny Kin On Conference paper

2019 4

Design and Characterization of the Deep-Trench, U-Shaped Field-Plate Edge Termination for 1200-V-Class SiC Devices
IEEE Transactions on Electron Devices, v. 66, (10), October 2019, article number 8793109, p. 4251-4257
Liu, Yong; Yang, Wentao; Feng, Hao; Huang, Linhua; Onozawa, Yuichi; Wakimoto, Setsuko; Fujishima, Naoto; Sin, Johnny Kin On Article
Low-Temperature-Processed Power Schottky Diode Based on Amorphous Indium-Tin-Zinc-Oxide/Indium-Gallium-Zinc-Oxide Bilayer
IEEE Transactions on Electron Devices, v. 66, (11), November 2019, article number 8852851, p. 4759-4763
Zhou, Xianda; Lu, Lei; Wang, Kai; Wong, Man; Sin, Johnny Kin On; Kwok, Hoi Sing Article
A Silicon Molded Metal Transfer Process for On-Chip Suspended Power inductors
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII, June 2019, article number 8808586, p. 142-145
Ding, Yixiao; Fang, Xiangming; Wu, Rongxiang; Guo, Qili; Sin, Johnny Kin On Conference paper
Trench Field Plate Engineering for High Efficient Edge Termination of 1200 V-class SiC Devices
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757620, p. 143-146
Liu, Yong; Yang, Wentao; Feng, Hao; Onozawa, Yuichi; Wakimoto, Setsuko; Fujishima, Naoto; Sin, Johnny Kin On Conference paper

2018 5

A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect Transistor
IEEE Electron Device Letters, v. 39, (3), March 2018, p. 394-396
Ren, Jie; Tang, chak wah; Hao, feng; Jiang, Huaxing; Yang, Wentao; Zhou, xianda; Lau, Kei May; Sin, Johnny Kin On Article
A silicon-embedded inductor surrounded by porous silicon for improved quality factor
ECS Journal of Solid State Science and Technology, v. 7, (6), 2018, p. 112-115
Wu, Rongxiang; Liao, Niteng; Sin, Johnny Kin On; Bardet, Benjamin; Billoue, Jerome; Gautier, Gael Article
A Power Inductor Integration Technology Using a Silicon Interposer for DC-DC Converter Applications
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 347-350
Ding, Yixiao; Fang, Xiangming; Gao, Yuan; Cai, Yuefei; Qiu, Xing; Mok, Kwok Tai Philip; Lee, Shi-wei; Lau, Kei May; Sin, Johnny Kin On Conference paper
Experimental Characterization of the Fully Integrated Si-GaN Cascoded FET
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 216-219
Ren, Jie; Tang, Chak Wah; Feng, Hao; Jiang, Huaxing; Yang, Wentao; Lau, Kei May; Sin, Johnny Kin On Conference paper
Optimization of Trench Sidewall for Low Leakage Current of the Sloped Field Plate Trench Edge Termination
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 172-175
Yang, Wentao; Zhou, Xianda; Xiao, Chao; Feng, Hao; Liu, Yong; Fang, Xiangming; Onozawa, Yuichi; Tanaka, Hiroyuki; Mitsuzuka, Kaname; Sin, Johnny Kin On Conference paper

2017 5

A 3D Assembled Silicon-Embedded Transformer for 10-MHz, Ultra-High-Isolation, Compact Chip-to-Chip Power Transfer
IEEE Electron Device Letters, v. 38, (3), March 2017, article number 7812646, p. 356-358
Wu, Rongxiang; Liao, Niteng; Fang, Xiangming; Cai, Jian; Wang, Qian; Sin, Johnny K O Article
A Novel Si–GaN Monolithic Integration Technology for a High-Voltage Cascoded Diode
IEEE Electron Device Letters, v. 38, (4), April 2017, article number 7847414, p. 501-504
Ren, Jie; Liu, Chao; Tang, Chak Wah; Lau, Kei May; Sin, Johnny Kin On Article
Design and Characterization of Sloped-Field-Plate Enhanced Trench Edge Termination
IEEE Transactions on Electron Devices, v. 64, (3), March 2017, article number 7790818, p. 728-734
Yang, Wentao; Feng, Hao; Fang, Xiangming; Liu, Yong; Onozawa, Yuichi; Tanaka, Hiroyuki; Sin, Johnny K O Article
A New 1200 V-class Edge Termination Structure With Trench Double Field Plates for High dv/dt Performance
Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, July 2017, article number 7988938, p. 109-112
Yang, Wentao; Feng, Hao; Liu, Yong; Fang, Xiangming; Onozawa, Yuichi; Tanaka, Hiroyuki; Mitsuzuka, Kaname; Sin, Johnny Kin On Conference paper
Switching Characteristics of Monolithically Integrated Si-GaN Cascoded Rectifiers
Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2017), 2017, article number 7988928, p. 223-226
Ren, Jie; Liu, Chao; Tang, Chak Wah; Lau, Kei May; Sin, Jonny K.O. Conference paper

2016 9

A low recovery loss reverse-conducting IGBT with metal/P-body Schottky junctions for hard-switching applications
ECS Journal of Solid State Science and Technology, v. 5, (2), 2016, p. Q61-Q67
Feng, Hao; Yang, Wentao; Sin, Johnny K.O. Article
A Novel Double-Side Silicon-Embedded Transformer for 10-MHz, 1-kV-Isolation, Compact Power Transfer Applications
IEEE Transactions on Electron Devices, v. 63, (11), November 2016, article number 7579232, p. 4542-4545
Wu, Rongxiang; Liao, Niteng; Fang, Xiangming; Sin, Johnny K.O. Article
A Novel Sloped Field Plate-Enhanced Ultra-Short Edge Termination Structure
IEEE Electron Device Letters, v. 37, (4), April 2016, article number 7438992, p. 471-473
Yang, Wentao; Feng, Hao; Fang, Xiangming; Onozawa, Yuichi; Tanaka, Hiroyuki; Sin, Johnny Kin On Article
Analytical Modeling of AC Resistance in Thick Coil Integrated Spiral Inductors
IEEE Transactions on Electron Devices, v. 63, (2), February 2016, article number 7362166, p. 760-766
Fang, Xiangming; Wu, Rongxiang; Sin, Johnny K.O. Article
Improved Charge-Trapping Characteristics of ZrO₂ by Al Doping for Nonvolatile Memory Applications
IEEE Transactions on Device and Materials Reliability, v. 16, (1), March 2016, article number 7353132, p. 38-42
Huang, Xiaodong; Shi, Runpu; Sin, Johnny K.O.; Lai, Puito Article
Nb-doped Ga₂O₃ as Charge-trapping Layer for Nonvolatile Memory Applications
Microelectronics Reliability, v. 65, October 2016, p. 64-68
Shi, R.P.; Huang, X.D.; Sin, Johnny K.O.; Lai, P.T. Article
Y-Doped BaTiO₃ as a Charge-Trapping Layer for Nonvolatile Memory Applications
IEEE Electron Device Letters, v. 37, (12), December 2016, article number 7582372, p. 1555-1558
Shi, Runpu; Huang, Xiaodong; Sin, Johnny K.O.; Lai, Pui To Article
A 1200 V-class Fin P-body IGBT with Ultra-narrow-mesas for Low Conduction Loss
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520813, p. 203-206
Feng, Hao; Yang, Wentao; Onozawa, Yuichi; Yoshimura, Takashi; Tamenori, Akira; Sin, Johnny K O Conference paper
A Novel Edge Termination Structure for Achieving the Ideal Planar Junction Breakdown Voltage
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520834, p. 287-290
Yang, Wentao; Feng, Hao; Fang, Xiangming; Onozawa, Yuichi; Tanaka, Hiroyuki; Sin, Johnny K O Conference paper

2015 10

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance
IEEE Electron Device Letters, v. 36, (6), June 2015, article number 7094237, p. 591-593
Feng, Hao; Yang, Wentao; Onozawa, Yuichi; Yoshimura, Takashi; Tamenori, Akira; Sin, Johnny K.O. Article
A Silicon-Embedded Transformer for High-Efficiency, High-Isolation, and Low-Frequency On-Chip Power Transfer
IEEE Transactions on Electron Devices, v. 62, (1), January 2015, article number 6964808, p. 220-223
Wu, Rongxiang; Liao, Niteng; Fang, Xiangming; Sin, Johnny Kin On Article
Nb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications
Applied Physics Letters, v. 107, (16), October 2015, article number 163501
Shi, Runpu; Huang, X.D.; Sin, Johnny Kin On; Lai, Pui To Article
Nb-doped La2O3 as charge-trapping layer for nonvolatile memory applications
IEEE Transactions on Device and Materials Reliability, v. 15, (1), March 2015, article number 6971123, p. 123-126
Shi, Runpu; Huang, Xiaodong; Leung, Cheunghoi; Sin, Johnny Kin On; Lai, Pui To Article
Transient Turn-ON Characteristics of the Fin p-Body IGBT
IEEE Transactions on Electron Devices, v. 62, (8), August 2015, article number 7145407, p. 2555-2561
Feng, Hao; Yang, Wentao; Onozawa, Yuichi; Yoshimura, Takashi; Tamenori, Akira; Sin, Johnny Kin On Article
A Low Substrate Loss, Monolithically Integrated Power Inductor for Compact LED Drivers
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 53-56
Fang, Xiangming; Mak, Tsz Him; Gao, Yuan; Lau, Kei May; Mok, Philip Kwok Tai; Sin, Johnny Kin On Conference paper
A Novel 3D Transformer for Ultra-Compact Signal Isolation
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 297-300
Wu, Rongxiang; Liao, Niteng; Fang, Xiangming; Sin, Johnny K.O. Conference paper
Effect of high-temperature thermal treatment on AlGaN/GaN HEMT Epi for monolithic integration
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Ren, Jie; Liu, Chao; Lau, Kei May; Sin, Johnny K.O. Conference paper
Monolithically Integrated Passives for Power Management System Miniaturization
iLight Workshop 2015, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 16th January 2015
Sin, Johnny K.O. Conference paper
Reset-sensing quasi-V² single-inductor multiple-output buck converter with reduced cross-regulation
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, March 2015, article number 7104461, p. 935-940
Lee, Albert T.L.; Tan, Siewchong; Hui, S.Y.; Chan, Philip Ching Ho; Sin, Johnny K.O. Conference paper

2014 12

A novel integrated power inductor with vertical laminated core for improved L/R ratios
IEEE Electron Device Letters, v. 35, (12), December 2014, article number 2362749, p. 1287-1289
Fang, Xiangming; Wu, Rongxiang; Peng, Lulu; Sin, Johnny Kin On Article
A Novel SNOS Gate-Controlled, Normally-Off p-i-n Switch
IEEE Electron Device Letters, v. 35, (1), January 2014, article number 6680615, p. 111-113
Zhou, Xianda; Feng, Hao; Sin, Johnny Kin On Article
A Simple Low Cost Monolithic Transformer for High-Voltage Gate Driver Applications
IEEE Electron Device Letters, v. 35, (1), January 2014, article number 6679248, p. 108-110
Peng, Lulu; Wu, Rongxiang; Fang, Xiangming; Toyoda, Yoshiaki; Akahane, Masashi; Yamaji, Masaharu; Sumida, Hitoshi; Sin, Johnny Kin On Article
Adaptive high-bandwidth digitally controlled buck converter with improved line and load transient response
IET Power Electronics, v. 7, (3), 2014, p. 515-526
Lee, Albert Tin Leung; Sin, Johnny Kin On; Chan, Philip Ching Ho Article
Design and characterization of wireless power links for brain-machine interface applications
IEEE Transactions on Power Electronics, v. 29, (10), 2014, article number 6718154, p. 5462-5471
Wu, Rongxiang; Li, Wei; Luo, H.; Sin, Johnny Kin On; Yue, Chik Patrick Article
Optimization of Monolithic 3D TSV Transformers for High-Voltage Digital Isolators
ECS Journal of Solid State Science and Technology, v. 3, (10), 2014, p. Q207-Q211
Peng, Lulu; Wu, Rongxiang; Fang, Xiangming; Toyoda, Yoshiaki; Akahane, Masashi; Yamaji, Masaharu; Sumida, Hitoshi; Sin, Johnny K. Article
Scalability of Quasi-Hysteretic FSM-Based Digitally Controlled Single-Inductor Dual-String Buck LED Driver to Multiple Strings
IEEE Transactions on Power Electronics, v. 29, (1), 2014, article number 6482650, p. 501-513
Lee, Albert Tin Leung; Sin, Johnny Kin On; Chan, Philip Ching Ho Article
An Interleaved Backside Silicon-Embedded Transformer with High Isolation Capability
4th International Workshop on Power Supply-on-Chip, Boston, MA, USA, 6-8 October 2014
Liao, N.; Wu, R.X.; Fang, X.M.; Sin, Johnny Kin On Conference paper
Integrated Magnetics for Eco-friendly LED System-on-a-Chip Applications
The 4th International Power Supply on Chip Workshop (PwrSoC2014), Boston, Massachusetts, USA, 6-8 October 2014
Fang, Xiangming; Sin, Johnny Kin On; Lau, Kei May; Yue, Chik Patrick; Mok, Philip Kwok Tai Conference paper
Integration Scheme Toward LED System-on-a-Chip (SoC)
Solid-State and Organic Lighting, SOLED 2014; Energy Change Institute, Australian National UniversityCanberra, Australia, 2 December 2014 through 5 December 2014
Mak, Tsz Him; Liu, Zhaojun; Chong, Wing Cheung; Gao, Yuan; Fang, Xiangming; Sin, Johnny Kin On; Mok, Philip Kwok Tai; Lau, Kei May Conference paper
Poly-Si/-Si(1-x)Ge(x)/si Sandwiched Conductivity Modulated TFT for High-voltage Drivers in Large Area Electronic Applications
European Solid-State Device Research Conference, v. 13-15 Sept. 1999, 1999, article number 1505597, p. 692-695
Zhu, Chunxiang; Sin, J.K.O. Conference paper
Through Silicon Underfill Dispensing for 3D Die/Interposer Stacking
Proceedings - Electronic Components and Technology Conference, September 2014, article number 6897397, p. 919-924
Le, Fuliang; Lee, Ricky Shi-wei; Lau, Kei May; Yue, Chik Patrick; Sin, Johnny Kin On; Mok, Philip Kwok Tai; Ki, Wing Hung; Choi, Hoi Wai Conference paper

2013 11

A Fully Integrated 3D TSV Transformer for High-Voltage Signal Transfer Applications
ECS Solid State Letters, v. 2, (5), 2013
Peng, Lulu; Wu, Rongxiang; Fang, Xiangming; Toyoda, Yoshiaki; Akahane, Masashi; Yamaji, Masaharu; Sumida, Hitoshi; Sin, Johnny Kin On Article
A Novel Silicon-Embedded Toroidal Power Inductor With Magnetic Core
IEEE Electron Device Letters, v. 34, (2), 2013, article number 6410333, p. 292-294
Fang, Xiangming; Wu, Rongxiang; Peng, Lulu; Sin, Johnny Kin On Article
BaTiO3 as charge-trapping layer for nonvolatile memory applications
Solid-State Electronics, v. 79, January 2013, p. 285-289
Huang, X.D.; Sin, Johnny K.O.; Lai, P.T. Article
Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications
IEEE Transactions on Nanotechnology, v. 12, (2), 2013, article number 6392971, p. 157-162
Huang, X.D.; Sin, Johnny K.O.; Lai, P.T. Article
High-Q Backside Silicon-Embedded Inductor for Power Applications in μH and MHz Range
IEEE Transactions on Electron Devices, v. 60, (1), January 2013, article number 6353195, p. 339-345
Wu, Rongxiang; Sin, Johnny Kin On; Yue, Patrick Chik Article
Hot Carrier Injection Effects in the Ultrashallow Body SONOS Gate Power MOSFET
IEEE Transactions on Electron Devices, v. 60, (6), 2013, article number 6515194, p. 2008-2014
Zhou, Xianda; Feng, Hao; Sin, Johnny Kin On Article
Improved Charge-Trapping Characteristics of BaTiO3 by Zr Doping for Nonvolatile Memory Applications
IEEE Electron Device Letters, v. 34, (4), 2013, article number 6471738, p. 499-501
Huang, Xiaodong; Sin, Johnny K.O.; Lai, Puito Article
Silicon-Embedded Receiving Coil for High-Efficiency Wireless Power Transfer to Implantable Biomedical ICs
IEEE Electron Device Letters, v. 34, (1), 2013, article number 6365746, p. 9-11
Wu, Rongxiang; Raju, Salahuddin; Chan, Man Sun; Sin, Johnny Kin On; Yue, Chik Patrick Article
Integrated Power Devices and TCAD Simulation
Integrated Power Devices and TCAD Simulation / Yue Fu, Zhanming Li, Wai Tung Ng, Johnny K.O. Sin. CRC Press, 2014
Fu, Yue; Li, Zhanming; Ng, Wai Tung; Sin, Johnny Kin On Book
A Novel 3D TSV Transformer Technology for Digital Isolator Gate Driver Applications
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2013, article number 6694399, p. 69-72
Peng, Lulu; Wu, Rongxiang; Fang, Xiangming; Toyoda, Yoshiaki; Akahane, Masashi; Yamaji, Masaharu; Sumida, Hitoshi; Sin, Johnny Kin On Conference paper
Cost-effective and Eco-friendly LED System-on-a-Chip (SoC)
2013 10th China International Forum on Solid State Lighting, ChinaSSL 2013, 2013, article number 7177356, p. 235-238
Lau, Kei May; Choi, Hoiwai; Ki, Wing-Hung; Lee, Ricky Shi Wei; Mok, Philip Kwok Tai; Sin, Johnny Kin On; Yue, Chik Patrick Conference paper

2012 10

Charge-trapping characteristics of Ga2O3 nanocrystals for nonvolatile memory applications
ECS solid state letters, v. 1, (5), 2012, p. Q45-Q47
Huang, Xiaodong; Lai, Puito; Sin, Johnny Kin On Article
High-Efficiency Silicon-Embedded Coreless Coupled Inductors for Power Supply on Chip Applications
IEEE Transactions on Power Electronics, v. 27, November 2012, p. 4781-4787
Wu, Rongxiang; Sin, Johnny K.O. Article
LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications
Applied physics. A, Materials science & processing, v. 108, (1), 2012, Jul, p. 229-234
Huang, X.D.; Lai, P.T.; Sin, Johnny K.O. Article
Nitrided La₂O₃ as charge-trapping layer for nonvolatile memory applications
IEEE Transactions on Device and Materials Reliability, v. 12, (2), 2012, Jun, p. 306-310
Huang, X.D.; Sin, J.K.O.; Lai, P.T. Article
Performance of nonvolatile memory by using band-engineered SrTiO3/HfON stack as charge-trapping layer
Microelectronics and reliability, v. 52, (11), November 2012, p. 2527-2531
Huang, X.D.; Lai, P.T.; Sin, Johnny K.O. Article
UIS analysis and characterization of the SONOS gate power MOSFET
IEEE Transactions on Electron Devices, v. 59, (2), 2012, Feb, p. 408-413
Zhou, X.; Ng, J.C.W.; Sin, J.K.O. Article
A New Embedded Inductor for ZVS DC-DC Converter Applications
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, 2012, p. 53-56
Fang, Xiangming; Wu, Rongxiang; Peng, Lulu; Sin, Johnny Kin On Conference paper
A Planar SONOS Gate Power MOSFET with an Ultra-Shallow Body Region
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2012, 2012, article number 6229031, p. 93-96
Zhou, Xianda; Feng, Hao; Sin, Johnny Kin On Conference paper
Backside Embedded Inductors for PwrSoC Applications
3rd International Workshop on Power Supply on Chip, San Francisco, USA, 16-18, Nov, 2012
Wu, Rongxiang; Fang, Xiangming; Peng, Lulu; Sin, Johnny Kin On Conference paper
Wireless power link design using silicon-embedded inductors for brain-machine interface
2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers, Taiwan, April 23-25, 2012, p. 1-4
Wu, Rongxiang; Raju, Salahuddin; Chan, Man Sun; Sin, Johnny Kin On; Yue, Chik Patrick Conference paper

2011 7

A Novel Silicon-Embedded Coreless Inductor for High-Frequency Power Management Applications
IEEE electron device letters, v. 32, (1), January 2011, p. 60-62
Wu, Rongxiang; Sin, Johnny K.O. Article
A Novel SONOS Gate Power MOSFET With Excellent UIS Capability
IEEE electron device letters, v. 32, (10), October 2011, p. 1415-1417
Zhou, Xianda; Ng, Jacky C.W.; Sin, Johnny K.O. Article
Fluorinated SrTiO₃ as Charge-Trapping Layer for Nonvolatile Memory Applications
IEEE Transactions on Electron Devices, v. 58, (12), December 2011, article number 6062402, p. 4235-4240
Huang, Xiaodong; Sin, Johnny Kin On; Lai, Pui To Article
Novel silicon-embedded coreless transformer for on-chip isolated signal transfer
IEEE Magnetics Letters, v. 2, 2011
Wu, R.; Sin, J.K.O.; Hui, S.Y. Article
UIS Analysis and Characterization of the Inverted L-Shaped Source Trench Power MOSFET
IEEE Transactions on Electron Devices, v. 58, (11), November 2011, article number 6016231, p. 3984-3990
Ng, Jacky C.W.; Sin, Johnny Kin On; Sumida, Hitoshi; Toyoda, Yoshiaki; Ohi, Akihiko; Tanaka, Hiroyuki; Nishimura, Takeyoshi; Ueno, Katsunori Article
A Novel Silicon-Embedded Coreless Transformer for Isolated DC-DC Converter Application
Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs, 2011, p. 352-355
Wu, Rongxiang; Sin, Johnny K.O.; Hui, S. Y. (Ron) Conference paper
Novel silicon-embedded coreless coupled inductors for high efficiency on-chip DC-DC conversion
IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings, 2011, p. 1827-1831
Wu, R.; Sin, J.K.O. Conference paper

2010 4

A new 20 V-rated buried-oxide trench-gate bipolar-mode JFET FOR DC/DC converters
IEEE Transactions on Electron Devices, v. 57, (12), 2010, p. 3531-3535
Tian, B.; Wu, Y.; Huang, H.; Guan, L.; Sin, J.K.O.; Kang, B. Article
A new trench power MOSFET with an inverted L-shaped source region
IEEE Electron Device Letters, v. 31, (11), 2010, p. 1284-1286
Ng, J.C.W.; Sin, J.K.O.; Sumida, H.; Toyoda, Y.; Ohi, A.; Tanaka, H.; Nishimura, T.; Ueno, K. Article
A Novel Low-Voltage Trench Power MOSFET with Improved Avalanche Capability
Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs, 2010, p. 201-204
Ng, Jacky C.W.; Sin, Johnny K.O.; Sumida, Hitoshi; Toyoda, Yoshiaki; Ohi, Akihiko; Tanaka, Hiroyuki; Nishimura, Takeyoshi; Ueno, Katsunori Conference paper
High performance CMOS-compatible super-junction FINFETs for sub-100V applications
Technical digest - International Electron Devices Meeting, 2010, p. 20.7.1-20.7.4
Yoo, A.; Ng, J.C.W.; Sin, J.K.O.; Ng, W.T. Conference paper

2009 4

A Low-Voltage Planar Power MOSFET With a Segmented JFET Region
IEEE transactions on electron devices, v. 56, (8), 2009, AUG, p. 1761-1766
Ng, Jacky C.W.; Sin, Johnny K.O. Article
A New Isolation Technology for Automotive Power-Integrated-Circuit Applications
IEEE transactions on electron devices, v. 56, (9), 2009, SEP, p. 2144-2149
Sun, Jingmeng; Jiang, Frank X.C.; Guan, Lingpeng; Xiong, Zhibin; Yan, Guizhen; Sin, Johnny K.O. Article
A new internal transparent collector IGB
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2009, 2009, article number 5158058, p. 287-290
Hu, Dongqing; Sin, J.K.O.; Wu, Yu; Kang, Baowei; You, Xuelan; Cheng, Xu Conference paper
Modeling of internal transparent collector IGBTs and the extraction of electron lifetime in nano-voids layer
2009 IEEE Energy Conversion Congress and Exposition, ECCE 2009, 2009, p. 3948-3953
Hu, D.Q.; Wu, Y.; Kang, B.W.; Jia, Y.P.; Sin, J.K.O. Conference paper

2008 5

A novel planar power MOSFET with laterally uniform body and ion-implanted JFET region
IEEE electron device letters, v. 29, (4), 2008, APR, p. 375-377
Ng, Jacky C.W.; Sin, Johnny K.O.; Guan, Lingpeng Article
A Novel Sub-20V Power MOSFET with Improved On-Resistance and Threshold Variation
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2008, 2008, article number 4538905, p. 91-94
Ng, Jacky C. W.; Sin, J.K.O.; Guan, Lingpeng Conference paper
Characteristics of Monolithic Coreless Transformers for Power Supply-on-Chip Applications
1st International Workshop on Power Supply-On-Chip, Cork, Ireland, pp. 75, Sept. 2008
Wu, R.X.; Su, Y.P.; Sin, J.K.O.; Hui, S.Y. Conference paper
Evaluation of trench-gate bipolar-mode JFETs used as high-side transistors in low-voltage buck converters
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2008, p. 127-130
Wu, Y.; Tian, B.; Huang, H.; Hu, D.; Sin, J.K.O.; Kang, B. Conference paper
SJ-FINFET: A new low voltage lateral superjunction MOSFET
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2008, p. 111-114
Onishi, Y.; Wang, H.; Xu, H.P.E.; Ng, W.T.; Wu, R.; Sin, J.K.O. Conference paper

2007 3

Transient characterization of the planar DMOS with a Metal/Poly-Si replacement gate
IEEE transactions on electron devices, v. 54, (7), 2007, JUL, p. 1789-1792
Guan, Lingpeng; Sin, Johnny K.O. Article
A power bipolar integrated device with Schottky extension of anode
PESC Record - IEEE Annual Power Electronics Specialists Conference, 2007, p. 997-1000
Wu, Y.; Cheng, X.; Sin, J.K.O.; Kang, B.; Hu, D. Conference paper
Lifetime control of power fast recovery diode with low emitter efficiency anode
PESC Record - IEEE Annual Power Electronics Specialists Conference, 2007, p. 991-994
Hu, D.; Sin, J.K.O.; Kang, B.; Cheng, X.; Wu, Y.; Xie, S. Conference paper

2006 4

A 30 V self-aligned metal/poly-Si replacement gate planar DMOS for DC/DC converters
IEEE electron device letters, v. 27, (11), 2006, NOV, p. 920-922
Guan, Lingpeng; Sin, Johnny K.O. Article
A fully integrated SOI RF MEMS technology for system-on-a-chip applications
IEEE transactions on electron devices, v. 53, (1), 2006, JAN, p. 167-172
Guan, LP; Sin, JKO; Liu, HT; Xiong, ZB Article
A new high-temperature thermal sensor based on large-grain polysilicon on insulator
Sensors and Actuators a-physical, v. 130, (Sp. Iss. SI), 2006, AUG 14, p. 129-134
Wu, Z.H.; Lai, P.T.; Sin, Johnny K.O. Article
Extraction of the inversion and accumulation layer mobilities in n-channel trench DMOSFETs
IEEE transactions on electron devices, v. 53, (8), 2006, AUG, p. 1914-1921
Ng, Jacky C.W.; Sin, Johnny K.O. Article

2005 6

A new HCBT with a partially etched collector
IEEE electron device letters, v. 26, (3), 2005, MAR, p. 200-202
Suligoj, T.; Biljanovic, P.; Sin, JKO; Wang, KL Article
A new polysilicon CMOS self-aligned double-gate TFT technology
IEEE transactions on electron devices, v. 52, (12), 2005, DEC, p. 2629-2633
Xiong, ZB; Liu, HT; Zhu, CX; Sin, JKO Article
A novel SOI lateral-power MOSFET with a self-aligned drift region
IEEE electron device letters, v. 26, (4), 2005, APR, p. 264-266
Guan, LP; Sin, JKO; Xiong, ZB; Liu, HT Article
Geometric effect of nickel source on low-temperature polycrystalline silicon TFTs by metal-induced lateral crystallization
IEEE electron device letters, v. 26, (11), 2005, NOV, p. 814-816
Li, JF; Sun, XW; Qi, GJ; Sin, JKO; Huang, ZH; Zeng, XT Article
Horizontal current bipolar transistor (HCBT) process variations for future RF BiCMOS applications
IEEE transactions on electron devices, v. 52, (7), 2005, JUL, p. 1392-1398
Suligoj, T.; Sin, JKO; Wang, KL Article
A novel drift region self-aligned SOI power MOSFET using a partial exposure technique
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2005, p. 171-174
Guan, L.; Sin, J.K.O.; Xiong, Z.; Liu, H. Conference paper

2004 13

A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs
Solid-state electronics, v. 48, (10-11), 2004, OCT-NOV, p. 2047-2050
Suligoj, T.; Liu, H.; Sin, JKO; Tsui, K.; Chu, RM; Chen, KJ; Biljanovic, P.; Wang, KL Article
A novel self-aligned offset-gated polysilicon TFT using high-kappa, dielectric spacers
IEEE electron device letters, v. 25, (4), 2004, APR, p. 194-195
Xiong, ZB; Liu, HT; Zhu, CX; Sin, JKO Article
A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation
IEEE electron device letters, v. 25, (9), 2004, SEP, p. 631-633
Wu, N.; Zhang, QC; Zhu, CX; Chan, DSH; Du, AY; Balasubramanian, N.; Li, MF; Chin, A.; Sin, JKO; Kwong, DL Article
Characteristics of high-kappa spacer offset-gated polysilicon TFTs
IEEE transactions on electron devices, v. 51, (8), 2004, AUG, p. 1304-1308
Xiong, ZB; Liu, HT; Zhu, CX; Sin, JKO Article
Characterization of the ultrathin vertical channel CMOS technology
IEEE transactions on electron devices, v. 51, (1), 2004, JAN, p. 106-112
Liu, HT; Sin, JKO; Xuan, PQ; Bokor, J. Article
Improving reliability of poly-Si TFTs with channel layer and gate oxide passivated by NH3/N2O plasma
MICROELECTRONICS RELIABILITY, v. 44, (3), 2004, MAR, p. 435-442
Zeng, XB; Sun, XW; Li, JF; Sin, JKO Article
A Fully Integrated CMOS and High Voltage Compatible RF MEMS Technology
Technical Digest - International Electron Devices Meeting, IEDM, San Francisco, USA, Dec. 2004, pp. 35-38
Guan, L.; Sin, J.K.O.; Liu, H.; Xiong, Z. Conference paper
A novel low-cost Horizontal Current Bipolar Transistor (HCBT) with the reduced parasitics
Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2004, p. 36-39
Suligoj, T.; Biljanovic, P.; Sin, J.K.O.; Wang, K.L. Conference paper
A Novel Self-Aligned Lightly Doped-Drain Poly-Si TFT Using a Partial Exposure Technique
Society for Information Display, 2004 International Symposium, Seminar, and Exhibition, Seattle, Washington, USA
Xiong, Z.; Liu, H.; Zhu, C.; Sin, J.K.O. Conference paper
A novel surface passivation process for HfO₂ Ge MOSFETs
Device Research Conference - Conference Digest, DRC, 2004, p. 19-20
Wu, N.; Zhang, Q.; Zhu, C.; Chan, D.S.H.; Li, M.F.; Balasubramanian, N.; Du, A.Y.; Chin, A.; Sin, J.K.O.; Kwong, D.L. Conference paper
A simple CMOS self-aligned double-gate poly-Si TFT technology
Meeting Abstracts, 2004, p. 963
Xiong, Z.; Liu, H.; Zhu, C.; Sin, J.K.O. Conference paper
A Simple CMOS Self-Aligned Double-Gate Poly-Si TFT Technology
Proceedings - Electrochemical Society, 2004, p. 87-91
Xiong, Z.; Liu, H.; Zhu, C.; Sin, J.K.O. Conference paper
Design, fabrication and characterization of a Bi-directional insulated gate bipolar transistor
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 1, 2004, p. 332-335
Zhao, S.; Sin, J.K.O.; Feng, C. Conference paper

2003 18

A general design methodology for the optimal multiple-field-limiting-ring structure using device simulator
IEEE transactions on electron devices, v. 50, (11), 2003, NOV, p. 2273-2279
Cheng, X.; Sin, JKO; Shen, J.; Huai, YJ; Li, RZ; Wu, Y.; Kang, BW Article
A novel ultrathin vertical channel NMOSFET with asymmetric fully overlapped LDD
IEEE Electron Device Letters, v. 24, (2), February 2003, p. 84-86
Liu, Haitao; Xiong, Zhibin; Sin, Johnny Kin On Article
An ultrathin vertical channel MOSFET for sub-100-nm applications
IEEE transactions on electron devices, v. 50, (5), 2003, MAY, p. 1322-1327
Liu, HT; Xiong, ZB; Sin, JKO Article
Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation
MICROELECTRONICS RELIABILITY, v. 43, (1), 2003, JAN, p. 163-166
Or, DCT; Lai, PT; Sin, JKO; Kwok, PCK; Xu, JP Article
Fast reverse recovery body diode in high-voltage VDMOSFET using cell-distributed Schottky contacts
IEEE transactions on electron devices, v. 50, (5), 2003, MAY, p. 1422-1425
Cheng, X.; Sin, JKO; Kang, BW; Feng, CG; Wu, Y.; Liu, XM Article
High-temperature thermal sensor based on ultra-thin silicon film for ultra-low-power applications
Solid-state electronics, v. 47, (9), 2003, SEP, p. 1553-1558
Li, B.; Wu, ZH; Lai, PT; Sin, JKO; Liu, BY; Zheng, XR Article
Implementation and Characterization of the Double-gate MOSFET Using Lateral Solid-phase Epitaxy
IEEE Transactions on Electron Devices, v. 50, (6), 2003, JUN, p. 1552-1555
Liu, HT; Xiong, ZB; Sin, JKO Article
Improved reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation
Solid-state electronics, v. 47, (8), 2003, AUG, p. 1391-1395
Or, DCT; Lai, PT; Sin, JKO; Xu, JP Article
Improving hydrogenation efficiency of polycrystalline silicon thin film transistors by a new approach
Microelectronics journal, v. 34, (11), 2003, NOV, p. 1079-1085
Zeng, XB; Sun, XW; Sin, JKO Article
Optimization of plasma nitridation for reliability enhancement of low-temperature gate dielectric in MOS devices
Solid-state electronics, v. 47, (11), 2003, NOV, p. 2049-2053
Or, DCT; Lai, PT; Sin, JKO Article
A Low-cost Horizontal Current Bipolar Transistor Technology (HCBT) for the BiCMOS Integration with FinFETs
International Semiconductor Device Research Symposium (ISDRS), Washington D.C., pp. 518-519
Suligoj, T.; Liu, H.; Sin, J.K.O.; Tsui, K.; Chen, K.J.; Biljanovic, P.; Wang, K.L. Conference paper
A Novel High-K Dielectric Spacer Polysilicon Thin-Film Transistor
Proceedings of the 10th International Display Workshops, Fukuoka, Japan, pp. 1671-2
Xiong, Z.; Liu, H.; Zhu, C.; Sin, J.K.O. Conference paper
A novel self-aligned ultra-thin elevated channel low temperature CMOS poly-Si TFT
THIN FILM TRANSISTOR TECHNOLOGIES VI, PROCEEDINGS, v. 2002, (23), 2003, p. 42-46
Xiong, ZB; Liu, HT; Zhu, CX; Sin, JKO Conference paper
A step-gate oxide SOI MOSFET for RF power amplifiers in short- and medium-range wireless applications
2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2003, p. 33-36
Liao, XP; Tsui, KKP; Liu, HT; Chen, KJ; Sin, JKO Conference paper
Ge pMOSFET with MOCVD HfO2 Gate Dielectric
International Semiconductor Device Research Symposium (ISDRS), Washington D.C., pp. 252-253
Wu, N.; Zhang, Q.; Zhu, C.; Li, M.F.; Chan, D.S.H.; Chin, A.; Kwong, D.L.; Bera, L.K.; Balasubramanian, N.; Du, A.Y.; Tung, C.H.; Liu, H.; Sin, J.K.O. Conference paper
Germanium pMOSFET with HfON Gate Dielectric
International Semiconductor Device Research Symposium (ISDRS), pp. 256-257
Zhang, Q.; Wu, N.; Zhu, C.; Li, M.F.; Chan, D.S.H.; Chin, A.; Kwong, D.L.; Bera, L.K.; Balasubramanian, N.; Du, A.Y.; Tung, C.H.; Liu, H.; Sin, J.K.O. Conference paper
Improving Reliability of Low-Temperature Poly-Si TFTs by Nitrous Oxide Plasma Treatment
Proc. SID, Baltimore, M.D., USA, pp. 212-215
Zeng, X.; Sun, X.W.; Li, J.; Sin, Johnny K.O. Conference paper
Improving the CoolMOS? body-diode switching performance with integrated Schottky contacts
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2003, p. 304-307
Cheng, X.; Liu, X.M.; Sin, J.K.O.; Kang, B.W. Conference paper

2002 16

A high-performance five-channel NMOSFET using selective epitaxial growth and lateral solid phase epitaxy
IEEE electron device letters, v. 23, (5), 2002, MAY, p. 261-263
Kumar, M.; Liu, HT; Sin, JKO Article
A novel 3-D BiCMOS technology using selective epitaxy growth (SEG) and lateral solid phase epitaxial (LSPE)
IEEE electron device letters, v. 23, (3), 2002, MAR, p. 151-153
Liu, HT; Kumar, M.; Sin, JKO Article
A simple, high performance TFSOI complementary BiCMOS technology for low power wireless applications
IEEE transactions on electron devices, v. 49, (1), 2002, JAN, p. 200-202
Kumar, M.; Tan, Y.; Sin, JKO Article
An Experimental Study on High-Temperature Metallization for Micro-Hotplate-Based Integrated Gas Sensors
Sensors and Actuators B: Chemical, v. 86, (1), August 2002, p. 1-11
Yan, Guizhen; Tang, Zhenan; Chan, Phillip C.H.; Sin, Johnny K.O.; Hsing, I-Ming; Wang, Yangyuan Article
An Integrated Gas Sensor Technology Using Surface Micro-Machining
Sensors and Actuators B: Chemical, v. 82, (2-3), February 2002, p. 277-283
Chan, Phillip C.H.; Yan, Guizhen; Sheng, Lieyi; Sharma, Rajnish Kumar; Tang, Zhenan; Sin, Johnny K.O.; Hsing, I-Ming; Wang, Yangyuan Article
Device characteristics of the 3-D BiCMOS technology using selective epitaxial growth and lateral solid phase epitaxy
IEEE transactions on electron devices, v. 49, (12), 2002, DEC, p. 2359-2362
Liu, HT; Kumar, M.; Sin, JKO Article
Excellent Cross-talk Isolation, High-Q inductors, and Reduced Self-heating in a TFSOI Technology for System-on-a-chip Applications
IEEE Transactions on Electron Devices, v. 49, (4), 2002, APR, p. 584-589
Kumar, M.; Tan, Y.; Sin, JKO Article
Implementation and characterization of self-aligned double-gate TFT with thin channel and thick source/drain
IEEE transactions on electron devices, v. 49, (5), 2002, MAY, p. 718-724
Zhang, Shengdong; Han, Ruqi; Sin, Johnny K.O.; Chan, Man Sun Article
Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDD
IEEE transactions on electron devices, v. 49, (8), 2002, AUG, p. 1490-1492
Zhang, Shengdong; Han, Ruqi; Sin, Johnny K.O.; Chan, Man Sun Article
The partial silicon-on-insulator technology for RF power LDMOSFET devices and on-chip microinductors
IEEE Transactions on Electron Devices, v. 49, (12), 2002, p. 2271-2278
Ren, C.; Cai, J.; Liang, Y.C.; Ong, P.H.; Balasubramanian, N.; Sin, J.K.O. Article
A high performance double-gate SOI MOSFET using lateral solid phase epitaxy
IEEE International SOI Conference, 2002, p. 28-29
Liu, H.; Xiong, Z.; Sin, J.K.O.; Xuan, P.; Bokor, J. Conference paper
A Novel Self-Aligned Ultra-Thin Elevated Channel Low Temperature CMOS Poly-Si TFT
The 202nd Meeting of the Electrochemical Society, Salt Lake City, Utah, Abstract No. 636
Xiong, Zhibin; Liu, Haitao; Zhu, C.; Sin, Johnny K.O. Conference paper
Enhanced Reliability for Gate Dielectric of Low-Temperature Polysilicon Thin-Film Transistors by NO-Plasma Nitridation
Proceedings of IEEE Hong Kong Electron Devices Meeting, 35-38
Or, David C.T.; Lai, P.T.; Sin, J.K.O.; Xu, J.P. Conference paper
High-Current Injection in Spreading-Resistance Temperature Sensor on SOI
Proceedings of IEEE Hong Kong Electron Devices Meeting, 69-72
Wu, Z.H.; Lai, P.T.; Li, Bin; Sin, J.K.O. Conference paper
The Investigation of an Integrated Gas Sensor Array
Proceedings of IEEE Sensors, v. 1, (1), 2002, article number 1037113, p. 343-343
Yan, Guizhen; Chan, Phillip C.H.; Miao, Min; Sin, Johnny K.O.; Hsing, I-Ming Conference paper
Ultra-Low-Power Thermal Sensor with Silicon-On-Insulator (SOI) Structure for High-Temperature Applications
Proceedings of IEEE Sensors, v. 1, (2), 2002, p. 1419-1422
Li, B.; Lai, P.T.; Sin, J.K.O.; Liu, B.Y.; Zheng, X.R.; Wu, Z.H. Conference paper

2001 26

A 600-V, 10-A trench bipolar junction diode with superior static and dynamic characteristics
IEEE transactions on electron devices, v. 48, (9), 2001, SEP, p. 2143-2147
You, BD; Huang, AQ; Sin, JKO Article
A novel high performance stacked LDD RF LDMOSFET
IEEE electron device letters, v. 22, (5), 2001, MAY, p. 236-238
Cai, J.; Ren, C.; Balasubramanian, N.; Sin, JKO Article
A novel self-aligned double-gate TFT technology
IEEE electron device letters, v. 22, (11), 2001, NOV, p. 530-532
Zhang, Shengdong; Han, Ruqi; Sin, Johnny K.O.; Chan, Man Sun Article
A novel two-step laser crystallization technique for low-temperature poly-Si TFTs
IEEE transactions on electron devices, v. 48, (5), 2001, MAY, p. 1008-1010
Zeng, XB; Xu, ZY; Sin, JKO; Dai, YB; Wang, CG Article
A SOI LDMOS technology compatible with CMOS, BJT, and passive components for fully-integrated RF power amplifiers
IEEE transactions on electron devices, v. 48, (10), 2001, OCT, p. 2428-2433
Tan, Y.; Kumar, M.; Cai, J.; Sin, JKO Article
An Improved TMAH Si-Etching Solution Without Attacking Exposed Aluminum
Sensors and Actuators A: Physical, v. 89, (1-2), March 2001, p. 135-141
Yan, Guizhen; Chan, Phillip C.H.; Hsing, I-Ming; Sharma, Rajnish Kumar; Sin, Johnny K.O.; Wang, Yangyuan Article
An interpretation of reverse current in metal/intrinsic diamond/semiconducting diamond junction diodes
Applied surface science, v. 171, (1-2), 2001, FEB 1, p. 57-62
Huang, QA; Sun, DY; Sin, JKO Article
An SOI LDMOS/CMOS/BJT technology for integrated power amplifiers used in wireless transceiver applications
IEEE electron device letters, v. 22, (3), 2001, MAR, p. 136-138
Kumar, M.; Tan, Y.; Sin, JKO; Cai, J. Article
Folded gate LDMOS transistor with low on-resistance and high transconductance
IEEE transactions on electron devices, v. 48, (12), 2001, DEC, p. 2917-2928
Zhu, YZ; Liang, YC; Xu, SM; Foo, PD; Sin, JKO Article
Investigation and Control of Microcracks in Tin Oxide Gas Sensing Thin-Films
Sensors and Actuators B: Chemical, v. 79, (1), September 2001, p. 39-47
Tang, Zhenan; Chan, Phillip C.H.; Sharma, Rajnish Kumar; Yan, Guizhen; Hsing, I-Ming; Sin, Johnny K.O. Article
Investigation of Stability and Reliability of Tin Oxide Thin-Film for Integrated Micro-Machined Gas Sensor Devices
Sensors and Actuators B: Chemical, v. 81, (1), December 2001, p. 9-16
Sharma, Rajnish Kumar; Chan, Phillip C.H.; Tang, Zhenan; Yan, Guizhen; Hsing, I-Ming; Sin, Johnny K.O. Article
Novel isolation structures for TFSOI technology
IEEE electron device letters, v. 22, (9), 2001, SEP, p. 435-437
Kumar, M.; Tan, Y.; Sin, JKO Article
Optimization of the specific on-resistance of the COOLMOS (TM)
IEEE transactions on electron devices, v. 48, (2), 2001, FEB, p. 344-348
Chen, XB; Sin, JKO Article
Sensitive, Selective and Stable Tin Dioxide Thin-Films for Carbon Monoxide and Hydrogen Sensing in Integrated Gas Sensor Array Applications
Sensors and Actuators B: Chemical, v. 72, (2), January 2001, p. 160-166
Sharma, Rajnish Kumar; Chan, Phillip C.H.; Tang, Zhenan; Yan, Guizhen; Hsing, I-Ming; Sin, Johnny K.O. Article
Surface plasma passivation of the polycrystalline silicon thin films by using NH3 or N2O gas
Journal of inorganic materials, v. 16, (4), 2001, JUL, p. 693-696
Zeng, XB; Sin, JKO; Xu, ZY; Rao, R. Article
Theoretical analysis and experimental characterization of the dummy-gated VDMOSFET
IEEE transactions on electron devices, v. 48, (9), 2001, SEP, p. 2168-2176
Xu, SM; Ren, CH; Lian, YC; Foo, PD; Sin, JKO Article
多晶硅薄膜的表面处理工艺
無機材料學報, v. 16, (4), July 2001, p. 693-696
曾祥斌; Sin, Johnny K.O.; 徐重陽; 饒瑞 Article
微热板的热测试和热分析
工程熱物理學報, v. 22, (2), March 2001, p. 226-228
顾毓沁; 张荣海; 朱德忠; 孙晓毅; 阎桂珍; 唐祯安; Chan, Philip Ching Ho; Sin, Johnny K.O.; Shing, I-Ming Article
A 3-D BiCMOS technology using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE)
Technical Digest - International Electron Devices Meeting, 2001, p. 729-732
Kumar, M.; Liu, H.; Sin, J.K.O.; Wan, J.; Wang, K.L. Conference paper
A novel five-channel NMOSFET using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE)
IEEE International SOI Conference, 2001, p. 77-78
Liu, H.; Kumar, M.; Sin, J.K.O.; Jun, W.; Wang, K.L. Conference paper
A Partial SOI Technology for Single-Chip RF Power Amplifiers
IEDM Tech. Dig., Washington DC
Cai, J.; Ran, C.; Liang, Y.; Balasubramanian, N.; Sin, J.K.O. Conference paper
A self-aligned double-gate polysilicon TFT technology
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, p. 395-398
Zhang, Shengdong; Han, Ruqi; Sin, Johnny K.O.; Chan, Man Sun Conference paper
An Effective Method to Increase Sensitivity and Stability of the Integrated Gas Sensor with Sensing Film Annealing at Higher Temperature
International Conference on Solid-State and Integrated Circuit Technology Proceedings, ICSICT, v. 2, 2001, article number 982009, p. 773-776
Yan, Guizhen; Chan, Philip C.H.; Sin, Johnny K.O.; Hsing, I-Ming; Wang, Yangyuan Conference paper
An Integrated Gas Sensor Technology Using Surface Micro-Machining
Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS), 2001, p. 543-546
Chan, Phillip C.H.; Yan, Guizhen; Sheng, Lieyi; Sharma, Rajnish Kumar; Tang, Zhenan; Sin, Johnny K.O.; Hsing, I-Ming; Wang, Yangyuan Conference paper
Device Degradation of n-channel Poly-Si TFT's due to High-Field, Hot-Carrier and Radiation Stressing
International Symposium on the Physical and Failure Analysis of ICs, Singapore
Khamesra, A.; Lal, R.; Vasi, J.; Kumar, A.; Sin, J.K.O. Conference paper
Phase-controlled dimmable CFL with PPFC and switching frequency modulation
PESC Record - IEEE Annual Power Electronics Specialists Conference, v. 2, 2001, p. 951-956
Yau, Elson K.F.; Ki, Wing-Hung; Mok, Philip Kwok Tai; Sin, Johnny Kin On Conference paper

2000 27

120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit
IEEE transactions on electron devices, v. 47, (10), 2000, OCT, p. 1980-1985
Xu, SM; Gan, KP; Samudra, GS; Liang, YC; Sin, JKO Article
A 900-MHz fully integrated SOI power amplifier for single-chip wireless transceiver applications
IEEE journal of solid-state circuits, v. 35, (10), 2000, OCT, p. 1481-1486
Tan, Y.; Kumar, M.; Sin, JKO; Shi, LX; Lau, J. Article
A high performance ethanol sensor based on field-effect transistor using a LaFeO3 nano-crystalline thin-film as a gate electrode
Sensors and Actuators b-chemical, v. 64, (1-3), 2000, JUN 10, p. 83-87
Zhao, SQ; Sin, JKO; Xu, BK; Zhao, MY; Peng, ZY; Cai, H. Article
A LDMOS technology compatible with CMOS and passive components for integrated RF power amplifiers
IEEE electron device letters, v. 21, (2), 2000, FEB, p. 82-84
Tan, Y.; Kumar, M.; Sin, JKO; Cai, J.; Lau, J. Article
A new trench base-shielded bipolar transistor
IEEE transactions on electron devices, v. 47, (8), 2000, AUG, p. 1662-1666
Chen, QF; You, BD; Huang, AQ; Sin, JKO Article
A novel high-voltage sustaining structure with buried oppositely doped regions
IEEE transactions on electron devices, v. 47, (6), 2000, JUN, p. 1280-1285
Chen, XB; Wang, X.; Sin, JKO Article
Characteristics of p- and n-channel poly-Si/Si1-xGex/Si Sandwiched Conductivity Modulated Thin-film Transistors
IEEE Transactions on Electron Devices, v. 47, (11), November 2000, p. 2188-2193
Zhu, Chunxiang; Sin, Johnny K O; Kwok, Hoi Sing Article
Compatibility of CO Gas Sensitive SnO₂/Pt Thin Film with Silicon Integrated Circuit Processing
Sensors and Actuators B: Chemical, v. 64, (1-3), June 2000, p. 49-53
Sharma, Rajnish Kumar; Tang, Zhenan; Chan, Philip C.H.; Sin, Johnny K.O.; Hsing, I-Ming Article
Gas chromatographic study on adsorption selectivity of tin dioxide gas sensor to organic vapors
Sensors and Actuators b-chemical, v. 66, (1-3), 2000, JUL 25, p. 156-158
Wang, DK; Ma, LZ; Zhao, GL; Tang, ZN; Chan, PCH; Sin, JKO; Sheng, LY Article
Novel self-protected MOS-gated thyristor
Tien Tzu Hsueh Pao/Acta Electronica Sinica, v. 28, (11), 2000, p. 22-24+35
Gao, Y.M.; Sin, J.K.O.; Xu, S.M. Article
State-of-the-art in Micro-Hotplates
International Journal of Nonlinear Sciences and Numerical Simulation, v. 1, (SUPPL.), 2000, p. 355-360
Tang, Z.; Li, X.; Cheng, G.; Chan, P.C.H.; Sin, J.K.O. Article
Study of the effects of rapid thermal annealing in generation-recombination noise in MBE grown GaN thin films
MICROELECTRONICS RELIABILITY, v. 40, (11), 2000, NOV, p. 1905-1909
Surya, C.; Zhu, CF; Leung, BH; Fong, WK; Cheng, CC; Sin, JKO Article
Three-stage large capacitive load amplifier with damping-factor-control frequency compensation
IEEE journal of solid-state circuits, v. 35, (2), 2000, FEB, p. 221-230
Leung, Ka Nang; Mok, Philip Kwok Tai; Ki, Wing Hung; Sin, Johnny Kin On Article
Ultra-thin elevated channel poly-Si TFT technology for fully-integrated AMLCD system on glass
IEEE transactions on electron devices, v. 47, (3), 2000, MAR, p. 569-575
Zhang, SD; Zhu, CX; Sin, JKO; Li, JN; Mok, PKT Article
多晶硅薄膜的等离子氢化新工艺
微電子學=Microelectronics, v. 30, (6), December 2000, p. 415-417
曾祥斌; 徐重阳; Sin, Johnny K. O.; 王长安; 赵伯芳; 周雪梅; 张洪涛; 饶瑞 Article
自保护MOS栅晶闸管
電子學報=Acta Electronica Sinica, v. 28, (11), November 2000, p. 22-24
高玉民; 单建安; 许曙明 Article
A 900MHz SOI fully-integrated RF power amplifier for wireless transceivers
Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2000, p. 382-383
Kumar, M.; Tan, Y.; Sin, J.; Shi, L.; Lau, J. Conference paper
A SOI LDMOS/CMOS/BJT technology for fully-integrated RF power amplifiers
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2000, p. 137-140
Tan, Y.; Kumar, M.; Sin, J.K.O.; Shi, L.; Lau, J. Conference paper
An Improved TMAH Si-etching Solution without Attacking Exposed Aluminum
Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS), 2000, p. 562-567
Yan, Guizhen; Chan, Philip C.H.; Hsing, I-Ming; Sharma, Rajnish Kumar; Sin, Johnny K.O. Conference paper
Analysis on an alternative structure of damping-factor-control frequency compensation
ISCAS 2000: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - PROCEEDINGS, VOL II: EMERGING TECHNOLOGIES FOR THE 21ST CENTURY, 2000, p. 545-548
Leung, Ka Nang; Mok, Philip Kwok Tai; Ki, Wing Hung; Sin, Johnny Kin On Conference paper
Double-side packaged, high power IGBTs for improved thermal and switching characteristics
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2000, p. 229-232
Zhao, S.; Sin, J.K.O. Conference paper
IC controller for phase-controlled dimmable compact fluorescent lamps with closed-loop control
Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, 2000, p. 503-506
Chan, Wilson W.S.; Mok, Philip Kwok Tai; Ng, Alex T.K.; Ki, Wing-Hung; Sin, Johnny Kin On Conference paper
Investigation of Sintering Characteristics of Composite Multilayer Metallization for MEMS Device Applications
International Symposium on Smart Structures & Microsystems, Hong Kong, 19 - 21 October 2000
Yan, Guizhen; Tang, Zhenan; Chan, Philip C.H.; Sharma, Rajnish Kumar; Sin, Johnny K.O.; Hsing, I-Ming; Wang, Yangyuan Conference paper
Lamp Modeling for Design of Dimmable Electronic Ballasts
IEEE Power Electronics Specialists Conference (PESC), v. 3, 2000, p. 1358-1362
Ng, Tai Kai; Ki, Wing-Hung; Mok, Philip Kowk Tai; Sin, Johnny Kin On Conference paper
Optimization of silicon Spreading-Resistance Temperature sensor
Proceedings of IEEE Hong Kong Electron Devices Meeting, v. 2000, p. 20-23
Li, Bi; Lai, P.T.; Chan, C.L.; Sin, Johnny Kin On Conference paper
Simple, High Performance Complementary TFSOI BiCMOS Technology with Excellent Cross-Talk Isolation and High-Q Inductors for Low Power Wireless Applications
IEEE International SOI Conference, 2000, p. 142-143
Kumar, Mahender; Tan, Yue; Sin, Johnny K.O. Conference paper
Static and dynamic characteristics of 600-V, 10-A trench bipolar junction diodes
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2000, p. 233-236
You, B.; Huang, A.Q.; Sin, J.K.O.; Xu, A. Conference paper

1999 17

A new lateral trench-gate conductivity modulated power transistor
IEEE transactions on electron devices, v. 46, (8), 1999, AUG, p. 1788-1793
Cai, J.; Sin, JKO; Mok, PKT; Ng, WT; Lai, PPT Article
A novel emitter-sharpened double-gate race-track-shaped field emitter structure
IEEE electron device letters, v. 20, (12), 1999, DEC, p. 621-623
Wang, BP; Huang, ZP; Sin, JKO; Poon, VMC; Tang, YM; Wang, C.; Xue, KX; Tong, LS Article
A novel ultrathin elevated channel low-temperature poly-Si TFT
IEEE electron device letters, v. 20, (11), 1999, NOV, p. 569-571
Zhang, SD; Zhu, CX; Sin, JKO; Mok, PKT Article
A P-channel poly-Si/Si1-xGex/Si sandwiched conductivity modulated thin-film transistor
IEEE electron device letters, v. 20, (9), 1999, SEP, p. 470-472
Zhu, CX; Sin, JKO Article
Analysis of high-voltage trench bipolar junction diode (TBJD)
Solid-state electronics, v. 43, (9), 1999, SEP, p. 1777-1783
You, BD; Huang, AQ; Sin, JKO Article
Characteristics of P-channel polysilicon conductivity modulated thin-film transistors
IEEE transactions on electron devices, v. 46, (7), 1999, JUL, p. 1406-1410
Zhu, CX; Sin, JKO; Ng, WT Article
Determination of the excess carrier lifetime in the collector region of silicon power bipolar transistors
IEEE transactions on electron devices, v. 46, (8), 1999, AUG, p. 1782-1787
Wu, Y.; Sin, JKO; Kang, BW; Guo, ZT; Cheng, X. Article
Influence of lateral electric field on the anomalous leakage current in polysilicon TFT's
IEEE electron device letters, v. 20, (1), 1999, JAN, p. 27-29
Kumar, KPA; Sin, JKO Article
Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices
IEEE transactions on electron devices, v. 46, (5), 1999, MAY, p. 1036-1041
Zhang, SD; Sin, JKO; Lai, TML; Ko, PK Article
Spreading-resistance temperature sensor on silicon-on-insulator
IEEE electron device letters, v. 20, (11), 1999, NOV, p. 589-591
Lai, PT; Li, B.; Chan, CL; Sin, JKO Article
A LDMOS Technology Compatible with CMOS, BJT, and Passive Components for Integrated RF Power Amplifiers
European Solid-State Device Research Conference, v. 13-15 Sept. 1999, article number 1505478, p. 216-219
Tan, Yue; Kumar, M?hender P.Sridhar; Sin, K.O.; Cai, Jun; Lau, Jack T.F. Conference paper
A New Approach to the Integration of SnO₂/Pt Thin Film as CO Gas Sensor
10th International Conference on Solid-State Sensors and Actuators, Sendai, Japan, 7 - 10 June 1999
Sharma, Rajnish Kumar; Tang, Zhenan; Chan, Phillip C.H.; Sin, Johnny K.O.; Hsing, I-Ming Conference paper
Damping-factor-control frequency compensation technique for low-voltage low-power large capacitive load applications
1999 IEEE International Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC, San Francisco, CA, USA, 17 Feb 1999, p. 158-159
Leung, Ka Nang; Mok, Philip Kwok Tai; Ki, Wing Hung; Sin, Johnny Kin On Conference paper
Design of monolithic RF power amplifier using bulk BiCMOS process
Midwest Symposium on Circuits and Systems, v. 1, 1999, p. 10-13
Chan, W.C.; Mok, Philip K.T.; Sin, Johnny K.O.; Ng, W.T. Conference paper
Experimental characterization of p-channel polysilicon conductivity modulated thin-film transistors
ASID'99: Proceedings of the 5th Asian Symposium on Information Display, 1999, p. 287-292
Zhu, Chunxiang; Sin, Johnny K O; Kwok, Hoi Sing Conference paper
Phase-controlled dimmable electronic ballast for fluorescent lamps
IEEE Power Electronics Specialists Conference (PESC), v. 2, 1999, p. 1121-1125
Ki, Wing-Hung; Shi, Jiying; Yau, Elson; Mok, Philip Kwok Tai; Sin, Johnny Kin On Conference paper
Ultra-thin Elevated Channel Low Temperature Poly-si tfts for Fully-integrated AMLCD Systems on Glass
Proceeding of the 29th European Solid-State Device Research Conference, IEEE, 1999, p. 708-711
Zhu, Chunxiang; Zhang, Shengdong; Sin, Johnny; Mok, Philip K.T. Conference paper

1998 10

A low-power CMOS compatible integrated gas sensor using maskless tin oxide sputtering
Sensors and Actuators b-chemical, v. 49, (1-2), 1998, JUN 25, p. 81-87
Sheng, LY; Tang, ZN; Wu, J.; Chan, PCH; Sin, JKO Article
A novel crosstalk isolation structure for bulk CMOS power IC's
IEEE transactions on electron devices, v. 45, (7), 1998, JUL, p. 1580-1586
Chan, WWT; Sin, JKO; Wong, SS Article
A novel self-aligned bidirectional MIM diode with transparent junctions for AM-LCD's
IEEE electron device letters, v. 19, (6), 1998, JUN, p. 192-194
Zhang, SD; Sin, JKO Article
An Integrated Gas Sensor Based on Tin Oxide Thin-film and Improved Micro-hotplate
Sensors and Actuators B-chemical, v. 46, (3), 1998, MAR 15, p. 174-179
Tang, Zhenan; Fung, Samuel; Wong, Darwin T.W.; Chan, Philip Ching Ho; Sin, Johnny K O; Cheung, Peter W. Article
An interpretation of SiO2-induced emission instability in silicon field emitter
Applied surface science, v. 136, (1-2), 1998, OCT, p. 36-40
Huang, QA; Sin, JKO; Poon, MC Article
Kink-free polycrystalline silicon double-gate elevated-channel thin-film transistors
IEEE transactions on electron devices, v. 45, (12), 1998, DEC, p. 2514-2520
Kumar, A.; Sin, JKO; Nguyen, CT; Ko, PK Article
Numerical and experimental characterization of single- and double-gate race-track-shaped field emitter structures
IEEE transactions on electron devices, v. 45, (2), 1998, FEB, p. 554-559
Wang, BP; Sin, JKO; Cai, J.; Poon, VMC; Wang, C.; Tang, YM; Tong, LS Article
Fabrication and characteristics of emitter-sharpened double-gate race-track-shaped field emitter structure
Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, v. 1998, p. 94-94
Wang, Baoping; Huang, Zhongping; Sin, Johnny Kin On; Wang, Chen; Xue, Kunxing Conference paper
New trench base-shielded bipolar transistor
IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD), 1998, p. 169-172
Chen, Qufei; Sin, Johnny K.O.; Chen, Qixiu Conference paper
Process windows of nickel silicide films
Advanced Metallization and Interconnect Systems for ULSI Applications in 1997; San Diego, CA; USA; 30 Sept.-2 Oct. 1997, pp. 705-709. 1998
Poon, Vincent Ming Cheong; Deng, F.; Chan, Man Sun; Qiao, D.J.; Zhang, Weiquan; Lau, S.S.; Wong, Hongmei; Sin, Johnny K.O.; Ho, Chenming Conference paper

1997 22

A field-enhanced generation model for field emission from p-type silicon
IEEE electron device letters, v. 18, (12), 1997, DEC, p. 616-618
Huang, QA; Qin, M.; Zhang, B.; Sin, JKO; Poon, MC Article
An analytical model for electric field distribution of positively beveled abrupt PN junctions
IEEE transactions on electron devices, v. 44, (5), 1997, MAY, p. 869-873
Chen, XB; Sin, JKO; Zhang, M.; Wang, B. Article
Field emission from silicon including continuum energy and surface quantization
Applied surface science, v. 119, (3-4), 1997, OCT, p. 229-236
Huang, QA; Sin, JKO; Poon, MC Article
Field emission from surface states of silicon
Journal of applied physics, v. 81, (11), 1997, JUN 1, p. 7589-7594
Huang, QA; Qin, M.; Zhang, B.; Sin, JKO Article
Numerical modeling of the disk-edge field emitter triode
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 15, (2), 1997, MAR-APR, p. 394-397
Wang, C.; Wang, BP; Zhao, HW; Sin, JKO; Poon, MC Article
Study of a novel T-shaped disk-edge field emitter structure
International journal of electronics, v. 83, (3), 1997, SEP, p. 299-305
Wang, C.; Zhao, HW; Yin, HC; Wang, BP; Sin, JKO; Tong, LS Article
Technique for fabricating self-aligned gates onto silicon field emitter arrays
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 15, (5), 1997, SEP-OCT, p. 1682-1684
Zhu, CC; Guan, H.; Liu, WD; Li, TY; Sin, JKO Article
Theory and experiments on r.f. sputtered tin oxide thin-films for gas sensing applications
Sensors and Actuators b-chemical, v. 43, (1-3), 1997, SEP, p. 161-164
Tang, ZN; Jiang, GP; Chan, PCH; Sin, JKO; Lau, SS Article
A Low-power CMOS Compatible Integrated Gas Sensor Using Maskless Tin Oxide Sputtering
International Conference on Solid-State Sensors and Actuators, Proceedings, v. 2, 1997, p. 939-942
Sheng, Lie Yi; Tang, Zhenan; Wu, Jian; Chan, Philip Ching Ho; Sin, Johnny K O Conference paper
A simple polysilicon TFT technology for display systems on glass
Technical digest - International Electron Devices Meeting, 1997, p. 515-518
Kumar, Anish K P; Sin, Johnny K O Conference paper
Characterization of light emitting porous polycrystalline silicon films
Materials Research Society Symposium - Proceedings, v. 452, 1997, p. 415-420
Poon, M.C.; Han, P.G.; Sin, J.K.O.; Wong, H.; Ko, P.K. Conference paper
Integration of SnO sub(2) thin-film onto micro-hotplate for gas sensor applications
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 145-148
Sheng, Lie-yi; Chan, Philip C.H.; Sin, Johnny K.O. Conference paper
Mechanisms of field emission from diamond films
Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, v. 1997, p. 300-304
Huang, Qing An; Qin, Ming; Zhang, Bing; Sin, Johnny Kin On Conference paper
Nanostructural study of luminescent porous polycrystalline silicon
Pro. in 1997 MRS Spring meeting, San Francisco, 1997
Poon, Vincent M.C.; Han, P.G.; Sin, Johnny K.O.; Wong, H. Conference paper
On The Leakage Current Mechanism In Non-uniform Film Polycrystalline Silicon TFTs
Proceedings of the Asian Symposium on Information Display, 1997, p. 199-202
Kumar, Anish K P; Sin, Johnny K O; Kwok, Hoi Sing Conference paper
Porous Silicon Organic Vapor and Humidity Sensor
Materials Research Society Symposia Proceedings, v. 459, 1997, p. 183-188
Poon, M.C.; Sin, Johnny K O; Wong, Hei; Han, P.G.; Kwok, W.H.; Bow, Y.C. Conference paper
Reverse channel floating base emitter switched thyristor (RFB-EST)
Technical Digest - International Electron Devices Meeting, IEDM, v. 1997, p. 355-358
Xu, Shuming; Constapel, Rainer; Silber, Dieter; Sin, Johnny Kin On Conference paper
Simple method to design resonant circuits of electronic ballast for fluorescent lamps
Proceedings - IEEE International Symposium on Circuits and Systems, v. 3, 1997, p. 1744-1747
Li, Zhi; Mok, Philip Kwok Tai; Ki, Wing-Hung; Sin, Johnny Kin On Conference paper
Simulated gate current characteristics of the race-track-shaped field emitter structures
Proceedings of the Asian Symposium on Information Display, 1997, p. 141-144
Wang, Baoping; Sin, Johnny K.O.; Poon, M.C.; Wang, Chen; Tang, Yongming Conference paper
Thermal modeling of micro-hotplates for integrated sensor applications
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 149-152
Wong, Darwin T.W.; Chan, Philip C.H.; Sheng, Lie-yi; Sin, Johnny K.O. Conference paper
Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 65-68
Poon, Vincent Ming Cheong; Deng, Fei; Wong, Hei; Wong, Man; Sin, Johnny K O; Lau, Silvanus S.; Ho, C. H.; Han, P. G. Conference paper
Thermal stability of nickel silicide films in submicron p-type polysilicon lines
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 54-58
Poon, Vincent Ming Cheong; Deng, F.; Wong, Hongmei; Chan, Man Sun; Sin, Johnny K O; Lau, S.S.; Ho, Chenmei; Han, P.G. Conference paper

1996 18

A power IC technology with excellent cross-talk isolation
IEEE electron device letters, v. 17, (10), 1996, OCT, p. 467-469
Chan, WWT; Sin, JKO; Mok, PKT; Wong, SS Article
Electrostatic analysis of field emission triode with volcano-type gate
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 14, (3), 1996, MAY-JUN, p. 1938-1941
Wang, BP; Tong, LS; Sin, JKO; Poon, VMC Article
Optimizing polysilicon thin-film transistor performance with chemical-mechanical polishing and hydrogenation
IEEE electron device letters, v. 17, (11), 1996, NOV, p. 518-520
Chan, ABY; Nguyen, CT; Ko, PK; Wong, M.; Kumar, A.; Sin, J.; Wong, SS Article
Study of luminescent porous polycrystalline silicon thin films
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 14, (2), 1996, MAR-APR, p. 824-826
Han, PG; Poon, MC; Ko, PK; Sin, JKO; Wong, H. Article
Thermal analysis and design of a micro-hotplate for integrated gas-sensor applications
Sensors and Actuators a-physical, v. 54, (1-3), 1996, JUN, p. 482-487
Fung, SKH; Tang, ZN; Chan, PCH; Sin, JKO; Cheung, PW Article
大面积金属场致发射波长阵列制造的新方法
电子学报=Acta Electronica Sinica, v. 24, (11), November 1996, p. 48-51
李天英; 朱长纯; 薛耀国; 张声良; 单建安 Article
真空微电子平板显示器工艺研究
电子学报=Acta Electronica Sinica, v. 24, (11), November 1996, p. 119-121
皇甫鲁江; 朱长纯; 淮永进; 铁执玲; 单建安; 郭彩林 Article
A Fast Switching Insulated-Gate P-I-N Diode Controlled Thyristor Structure
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 1997, p. 122-125
Jun, Cai; Sin, Johnny K O; Poon, Vincent Ming Cheong; Ng, Wai Tung; Lai, Peter P.T. Conference paper
Characterization of sputtered tin oxide thin-films for gas sensing applications
6th International Meeting on Chemical Sensors, Gaithersburg, Maryland, USA, 22-25 June 1996
Tang, Zhenan; Jiang, Guoping; Chan, Philip Ching Ho; Sin, Johnny K.O.; Lau, Silvanus S.W. Conference paper
CMOS latchup characterization for LDMOS/LIGBT power integrated circuits
ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, p. 15-18
Chan, WWT; Sin, JKO; Mok, PKT; Wong, SS Conference paper
Drift region doping effects on high voltage conductivity modulated thin film transistors
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1996, p. 37-39
Kumar, Anish K.P.; Sin, Johnny K.O.; Poon, Vincent M.C. Conference paper
High Voltage Characteristics of Polycrystalline Silicon Conductivity Modulated Thin Film Transistors
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 1997, p. 78-81
Kumar, Anish K.P.; Sin, Johnny K O; Poon, M.C. Conference paper
Nanostructural Study of Luminescent Porous Polycrystalline Silicon
Materials Research Society Symposium Proceedings, v. 431, Jan 1996, p. 265-270
Poon, Vincent Ming Cheong; Han, P.G.; Sin, Johnny K.O.; Wong, Hei Conference paper
Novel single- and double-gate race-track-shaped field emitter structures
Technical Digest - International Electron Devices Meeting, 1996, p. 313-316
Wang, Baoping; Sin, Johnny K.O.; Cai, Jun; Poon, M.C.; Tang, Yongming; Wang, Chen; Tong, Linsu Conference paper
On the capacitance of vacuum microelectronic devices with different field emitter shapes
IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, 1996, p. 509-513
Wang, BP; Tang, YM; Sin, JKO; Poon, VMC Conference paper
Sensing Mechanism of Polymer for Selectivity Enhancement of Gas Sensors
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 1996, p. 217-220
Wong, Kenneth K.L.; Tang, Zhenan; Sin, Johnny K O; Chan, Philip Ching Ho; Cheung, Peter W.; Hiraoka, Hiroyuki Conference paper
SIMNI SOI Formed by High Intensity Nitrogen Implantation
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1996, p. 25-28
Poon, Vincent Ming Cheong; Wong, Sai Peng; Lam, Yat Wah; Chu, P.K.; Sin, Johnny Kin On Conference paper
Structural properties and electron states of amorphous diamond-like carbon
SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, p. 257-260
Jun, C.; Sin, JKO; Wang, KL Conference paper

1995 17

A CONDUCTIVITY MODULATED POLYSILICON THIN-FILM-TRANSISTOR
IEEE electron device letters, v. 16, (11), 1995, NOV, p. 521-523
KUMAR, A.; SIN, JKO; WONG, M.; POON, VMC Article
Micro-Hotplate for Integrated Thin-Film Gas Sensors
Journal of the Chinese Institute of Electrical Engineering, v. 2, (1), 1995, p. 75-79
Fung, Samuel; Tang, Zhenan; Chan, Philip Ching Ho; Sin, Johnny K.O.; Cheung, Peter W. Article
A Finite Width Impurity Source Model for Linear Doping Profiles
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 432-435
Lai, Tommy M L; Sin, Johnny K O; Ko, Ping Keung Conference paper
An automated precision gas sensor characterization system
1995 IEEE TENCON - ASIA-PACIFIC MICROELECTRONICS 2000, PROCEEDINGS, 1995, p. 187-190
Tang, ZN; Wong, DTW; Chan, PCH; Sin, JKO; Fung, SKH; Cheung, PW Conference paper
An Effective Cross-Talk Isolation Structure for Power IC Applications
Technical Digest - International Electron Devices Meeting, 1995, p. 971-974
Chan, Wilson W T; Sin, Johnny K O; Wong, Simon Conference paper
Cross-Talk Prevention for Power Integrated Circuits
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 428-431
Chan, Wilson W T; Wong, Felix C Y; Sin, Johnny K O; Wong, Simon Conference paper
Fast Numerical Method for Semiconductor Device Simulation
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 218-221
Wong, Tinyan; Poon, Vincent Ming Cheong; Sin, Johnny K O; Wong, Man; Lo, Taichin; Wong, Hei Conference paper
Implementation of linear doping profiles for high voltage thin-film SOI devices
IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD), 1995, p. 315-320
Lai, Tommy M.L.; Sin, Johnny K.O.; Wong, Man; Poon, Vincent M.C.; Ko, Ping K. Conference paper
Latch-Up Characteristics of a Trench-Gate Conductivity Modulated Power Transistor
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 424-427
Jun, Cai; Sin, Johnny K O; Ng, Wai Tung; Lai, Peter P T Conference paper
Luminescent Porous Polycrystalline Silicon Film
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 67-70
Han, P.G.; Poon, Vincent Ming Cheong; Ko, Ping Keung; Sin, Johnny K O; Wong, Man; Wong, Hei Conference paper
New Numerical Method for Semiconductor Device Simulation
International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1995, p. 622-624
Poon, Vincent Ming Cheong; Wong, Tinyan; Sin, Johnny K O; Wong, Man Conference paper
Off-Current Characteristics of Conductivity Modulated TFT
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 52-55
Kumar, Anish K P; Sin, Johnny K O Conference paper
Photoluminescent Porous Polycrystalline Silicon
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1995, p. 2-5
Han, P.G.; Poon, Vincent Ming Cheong; Sin, Johnny K O; Wong, Man Conference paper
Selectivity Enhancement of Tin Dioxide Gas Sensor with Polymer Membrane
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 179-182
Wong, Kenneth K L; Tang, Zhenan; Sin, Johnny K O; Chan, Philip Ching Ho; Cheung, Peter W.; HiHiraoka, Hiroyuki Conference paper
Study on Selectivity Enhancement of Tin Dioxide Gas Sensor Using Non-Conducting Polymer Membrane
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1995, p. 42-45
Wong, Kenneth K.L.; Tang, Zhenan; Sin, Johnny K.O.; Chan, Philip Ching Ho; Cheung, Peter W.; Hiraoka, Hiroyuki Conference paper
Thermal analysis and design of a micro-hotplate for integrated gas sensor applications
IEEE, PISCATAWAY, NJ,, Vol. 1, pp. 818-821. 1995
Fung, Samuel KH; Tang, Zhenan; Chan, Philip CH; Sin, Johnny KO; Cheung, Peter W. Conference paper
Thermal Analysis and Design of a Micro-Hotplate for Integrated Gas Sensor Applications
International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Proceedings, v. 1, 1995, p. 818-821
Fung, Samuel; Tang, Zhenan; Chan, Philip Ching Ho; Sin, Johnny K O; Cheung, Peter W. Conference paper

1994 1

Multimedia Textbook Paradigm: A Demonstration in Solid State Device Electronics
1994 IEEE First International Conference on Multi-Media Engineering Education Proceedings, 1994, p99-107.
Nguyen, C.T.; Wong, Man; Sin, J.K.O.; Smith, K.C. Conference paper

1993 1

ANALYSIS AND CHARACTERIZATION OF THE SEGMENTED ANODE LIGBT
IEEE transactions on electron devices, v. 40, (7), 1993, JUL, p. 1300-1306
SIN, JKO; MUKHERJEE, S. Article

1991 2

Lateral Insulated-Gate Bipolar Transistor (LIGBT) with a Segmented Anode Structure
IEEE Electron Device Letters, v. 12, (2), February 1991, p. 45-47
Sin, J.K.O.; Mukherjee, S. Article
Fast LIGBT Switching Due to Plasma Confinement Through Pulse Width Control
3rd International Symposium on Power Semiconductor Devices & ICs, Baltimore, April 1991
Wacyk, I.; Jayaraman, R.; Casey, L.; Sin, J.K.O. Conference paper

1990 2

Nonuniform and Latchup Current Detection in Lateral Conductivity Modulated FET's
IEEE Electron Device Letters, v. 11, (6), June 1990, p. 250-252
Sin, J.K.O.; Mukherjee, S. Article
Lateral Insulated Gate Bipolar Transistor (LIGBT) with a Segmented Anode Structure
Device Research Conference, Santa Barbara, CA, June 1990
Sin, J.K.O.; Mukherjee, S. Conference paper

1989 4

High Voltage Characteristics of Resurfed Schottky Injection FET's
Solid-State Electronics, v. 32, (4), 1989, p. 317-322
Sin, J.K.O.; Salama, C.A.T.; Mukherjee, S.; Rumennik, V. Article
The SINFET--A Schottky Injection MOS-Gated Power Transistor
IEEE Trans. Electron Devices, v. 33, (12), December 1986, p. 1940-1947
Sin, J.K.O.; Salama, C.A.T.; Hou, L.Z. Article
Transient Characteristics of n-channel Hybrid Schottky Injection FET's
IEEE Trans. Electron Devices, v. 36, (5), May 1989, p. 993-1000
Sin, J.K.O.; Salama, C.A.T.; Hou, L.Z. Article
Conductivity Modulation Effect in High Voltage n-channel Schottky Injection FETs
Proceedings of the Symposium on High Voltage and Smart Power ICs, Los Angeles, May 1989, p. 104-113
Sin, J.K.O.; Mukherjee, S. Conference paper

1987 1

P-channel Schottky Injection Field Effect Transistors
Proc. IEDM, 1987, p. 770-773
Ng, W.T.; Salama, C.A.T.; Sin, J.K.O. Conference paper

1986 4

Hybrid Schottky Injection MOS-Gated Power Transistor
Electron. Lett., v. 22, (19), September 1986, p. 1003-1005
Sin, J.K.O.; Salama, C.A.T. Article
Wideband DMOS Amplifier Competes with Bipolars
Microwaves & RF, v .25, (6), June 1986, p. 113-120
Sin, J.K.O.; Salama, C.A.T. Article
A Modified Schottky Injection High Voltage MOS-Gated Transistor
Third Canadian Semiconductor Technology Conference, Ottawa, Canada, Auguest 1986, p. 67
Sin, J.K.O.; Salama, C.A.T. Conference paper
Analysis and Characterization of the Hybrid Schottky Injection Field Effect Transistor
Proc. IEDM, December 1986, p. 222-225
Sin, J.K.O.; Salama, C.A.T.; Hou, L.Z. Conference paper

1985 2

High-Frequency Distortion Analysis of DMOS Transistors
Solid-State Electronics, v. 28, (12), 1985, p. 1223-1233
Sin, J.K.O.; Salama, C.A.T. Article
The SINFET: A New High Conductance, High Switching Speed MOS-Gated Transistor
Electron. Lett., v. 21, (24), November 1985. p. 1134-1136
Sin, J.K.O.; Salama, C.A.T. Article


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Article 3

A High-Efficiency Double-Side Silicon-Embedded Inductor for Integrated DC-DC Converter Applications
IEEE Transactions on Electron Devices, v. 68, (9), September 2021, article number 9511635, p. 4801-4804
Lv, Guangfu; Liao, Niteng; Ding, Yixiao; Fang, Xiangming; Bai, Feiming; Sin, Johnny Kin On; Wu, Rongxiang
Characterization of Al₂O₃/LaAlO₃/SiO₂ Gate Stack on 4H-SiC After Post-Deposition Annealing
IEEE Transactions on Electron Devices, v. 68, (4), April 2021, article number 9353391, p. 2133-2137
Huang, Linhua; Liu, Yong; Xiao, Chao; Ding, Yixiao; Peng, Xin; Onozawa, Yuichi; Tsuji, Takashi; Fujishima, Naoto; Sin, Johnny Kin On
Simulation Study of 4H-SiC High-k Pillar MOSFET with Integrated Schottky Barrier Diode
IEEE Journal of the Electron Devices Society, v. 9, September 2021, p. 951-957
Zheng, Ya Liang; Tang, Wing Man; Chau, Tony; Sin, Johnny Kin On; Lai, Peter T.

Conference paper 1

Low-Temperature Fabricated Amorphous Oxide Semiconductor Heterojunction Diode for Monolithic 3D Power Integration Applications
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452201, p. 283-286
Zhou, Xianda; Wang, Kai; Liu, Yang; Lu, Lei; Sin, Johnny Kin On


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Article 3

A New Fan-Out-Package-Embedded Power Inductor Technology
IEEE Electron Device Letters, v. 41, (2), February 2020, article number 8943300, p. 268-271
Ding, Yixiao; Fang, Xiangming; Wu, Rongxiang; Sin, Johnny Kin On
A Suspended Thick-Winding Inductor for Integrated Voltage Regulator Applications
IEEE Electron Device Letters, v. 41, (1), January 2020, article number 8902125, p. 95-98
Ding, Yixiao; Fang, Xiangming; Wu, Rongxiang; Guo, Qili; Sin, Johnny Kin On
A Trench-Field-Plate High-Voltage Power MOSFET
IEEE Transactions on Electron Devices, v. 67, (6), June 2020, article number 9090274, p. 2482-2488
Xiao, Chao; Yang, Wentao; Liu, Yong; Zhou, Xianda; Feng, Hao; Sin, Johnny Kin On

Conference paper 2

A New Double Trench, Buried-P JTE Edge Termination for 1200 V-class SiC Devices
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170165, p. 162-165
Liu, Yong; Feng, Hao; Zhou, Xianda; Huang, Linhua; Xiao, Chao; Peng, Xin; Sin, Johnny Kin On
Fan-Out-Package-Embedded Coupled Inductors for Integrated Voltage Conversion
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170128, p. 356-359
Ding, Yixiao; Fang, Xiangming; Wu, Rongxiang; Sin, Johnny Kin On


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Article 2

Design and Characterization of the Deep-Trench, U-Shaped Field-Plate Edge Termination for 1200-V-Class SiC Devices
IEEE Transactions on Electron Devices, v. 66, (10), October 2019, article number 8793109, p. 4251-4257
Liu, Yong; Yang, Wentao; Feng, Hao; Huang, Linhua; Onozawa, Yuichi; Wakimoto, Setsuko; Fujishima, Naoto; Sin, Johnny Kin On
Low-Temperature-Processed Power Schottky Diode Based on Amorphous Indium-Tin-Zinc-Oxide/Indium-Gallium-Zinc-Oxide Bilayer
IEEE Transactions on Electron Devices, v. 66, (11), November 2019, article number 8852851, p. 4759-4763
Zhou, Xianda; Lu, Lei; Wang, Kai; Wong, Man; Sin, Johnny Kin On; Kwok, Hoi Sing

Conference paper 2

A Silicon Molded Metal Transfer Process for On-Chip Suspended Power inductors
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII, June 2019, article number 8808586, p. 142-145
Ding, Yixiao; Fang, Xiangming; Wu, Rongxiang; Guo, Qili; Sin, Johnny Kin On
Trench Field Plate Engineering for High Efficient Edge Termination of 1200 V-class SiC Devices
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757620, p. 143-146
Liu, Yong; Yang, Wentao; Feng, Hao; Onozawa, Yuichi; Wakimoto, Setsuko; Fujishima, Naoto; Sin, Johnny Kin On


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Article 2

A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect Transistor
IEEE Electron Device Letters, v. 39, (3), March 2018, p. 394-396
Ren, Jie; Tang, chak wah; Hao, feng; Jiang, Huaxing; Yang, Wentao; Zhou, xianda; Lau, Kei May; Sin, Johnny Kin On
A silicon-embedded inductor surrounded by porous silicon for improved quality factor
ECS Journal of Solid State Science and Technology, v. 7, (6), 2018, p. 112-115
Wu, Rongxiang; Liao, Niteng; Sin, Johnny Kin On; Bardet, Benjamin; Billoue, Jerome; Gautier, Gael

Conference paper 3

A Power Inductor Integration Technology Using a Silicon Interposer for DC-DC Converter Applications
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 347-350
Ding, Yixiao; Fang, Xiangming; Gao, Yuan; Cai, Yuefei; Qiu, Xing; Mok, Kwok Tai Philip; Lee, Shi-wei; Lau, Kei May; Sin, Johnny Kin On
Experimental Characterization of the Fully Integrated Si-GaN Cascoded FET
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 216-219
Ren, Jie; Tang, Chak Wah; Feng, Hao; Jiang, Huaxing; Yang, Wentao; Lau, Kei May; Sin, Johnny Kin On
Optimization of Trench Sidewall for Low Leakage Current of the Sloped Field Plate Trench Edge Termination
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 172-175
Yang, Wentao; Zhou, Xianda; Xiao, Chao; Feng, Hao; Liu, Yong; Fang, Xiangming; Onozawa, Yuichi; Tanaka, Hiroyuki; Mitsuzuka, Kaname; Sin, Johnny Kin On


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Article 3

A 3D Assembled Silicon-Embedded Transformer for 10-MHz, Ultra-High-Isolation, Compact Chip-to-Chip Power Transfer
IEEE Electron Device Letters, v. 38, (3), March 2017, article number 7812646, p. 356-358
Wu, Rongxiang; Liao, Niteng; Fang, Xiangming; Cai, Jian; Wang, Qian; Sin, Johnny K O
A Novel Si–GaN Monolithic Integration Technology for a High-Voltage Cascoded Diode
IEEE Electron Device Letters, v. 38, (4), April 2017, article number 7847414, p. 501-504
Ren, Jie; Liu, Chao; Tang, Chak Wah; Lau, Kei May; Sin, Johnny Kin On
Design and Characterization of Sloped-Field-Plate Enhanced Trench Edge Termination
IEEE Transactions on Electron Devices, v. 64, (3), March 2017, article number 7790818, p. 728-734
Yang, Wentao; Feng, Hao; Fang, Xiangming; Liu, Yong; Onozawa, Yuichi; Tanaka, Hiroyuki; Sin, Johnny K O

Conference paper 2

A New 1200 V-class Edge Termination Structure With Trench Double Field Plates for High dv/dt Performance
Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, July 2017, article number 7988938, p. 109-112
Yang, Wentao; Feng, Hao; Liu, Yong; Fang, Xiangming; Onozawa, Yuichi; Tanaka, Hiroyuki; Mitsuzuka, Kaname; Sin, Johnny Kin On
Switching Characteristics of Monolithically Integrated Si-GaN Cascoded Rectifiers
Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2017), 2017, article number 7988928, p. 223-226
Ren, Jie; Liu, Chao; Tang, Chak Wah; Lau, Kei May; Sin, Jonny K.O.


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Article 7

A low recovery loss reverse-conducting IGBT with metal/P-body Schottky junctions for hard-switching applications
ECS Journal of Solid State Science and Technology, v. 5, (2), 2016, p. Q61-Q67
Feng, Hao; Yang, Wentao; Sin, Johnny K.O.
A Novel Double-Side Silicon-Embedded Transformer for 10-MHz, 1-kV-Isolation, Compact Power Transfer Applications
IEEE Transactions on Electron Devices, v. 63, (11), November 2016, article number 7579232, p. 4542-4545
Wu, Rongxiang; Liao, Niteng; Fang, Xiangming; Sin, Johnny K.O.
A Novel Sloped Field Plate-Enhanced Ultra-Short Edge Termination Structure
IEEE Electron Device Letters, v. 37, (4), April 2016, article number 7438992, p. 471-473
Yang, Wentao; Feng, Hao; Fang, Xiangming; Onozawa, Yuichi; Tanaka, Hiroyuki; Sin, Johnny Kin On
Analytical Modeling of AC Resistance in Thick Coil Integrated Spiral Inductors
IEEE Transactions on Electron Devices, v. 63, (2), February 2016, article number 7362166, p. 760-766
Fang, Xiangming; Wu, Rongxiang; Sin, Johnny K.O.
Improved Charge-Trapping Characteristics of ZrO₂ by Al Doping for Nonvolatile Memory Applications
IEEE Transactions on Device and Materials Reliability, v. 16, (1), March 2016, article number 7353132, p. 38-42
Huang, Xiaodong; Shi, Runpu; Sin, Johnny K.O.; Lai, Puito
Nb-doped Ga₂O₃ as Charge-trapping Layer for Nonvolatile Memory Applications
Microelectronics Reliability, v. 65, October 2016, p. 64-68
Shi, R.P.; Huang, X.D.; Sin, Johnny K.O.; Lai, P.T.
Y-Doped BaTiO₃ as a Charge-Trapping Layer for Nonvolatile Memory Applications
IEEE Electron Device Letters, v. 37, (12), December 2016, article number 7582372, p. 1555-1558
Shi, Runpu; Huang, Xiaodong; Sin, Johnny K.O.; Lai, Pui To

Conference paper 2

A 1200 V-class Fin P-body IGBT with Ultra-narrow-mesas for Low Conduction Loss
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520813, p. 203-206
Feng, Hao; Yang, Wentao; Onozawa, Yuichi; Yoshimura, Takashi; Tamenori, Akira; Sin, Johnny K O
A Novel Edge Termination Structure for Achieving the Ideal Planar Junction Breakdown Voltage
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520834, p. 287-290
Yang, Wentao; Feng, Hao; Fang, Xiangming; Onozawa, Yuichi; Tanaka, Hiroyuki; Sin, Johnny K O


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Article 5

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance
IEEE Electron Device Letters, v. 36, (6), June 2015, article number 7094237, p. 591-593
Feng, Hao; Yang, Wentao; Onozawa, Yuichi; Yoshimura, Takashi; Tamenori, Akira; Sin, Johnny K.O.
A Silicon-Embedded Transformer for High-Efficiency, High-Isolation, and Low-Frequency On-Chip Power Transfer
IEEE Transactions on Electron Devices, v. 62, (1), January 2015, article number 6964808, p. 220-223
Wu, Rongxiang; Liao, Niteng; Fang, Xiangming; Sin, Johnny Kin On
Nb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications
Applied Physics Letters, v. 107, (16), October 2015, article number 163501
Shi, Runpu; Huang, X.D.; Sin, Johnny Kin On; Lai, Pui To
Nb-doped La2O3 as charge-trapping layer for nonvolatile memory applications
IEEE Transactions on Device and Materials Reliability, v. 15, (1), March 2015, article number 6971123, p. 123-126
Shi, Runpu; Huang, Xiaodong; Leung, Cheunghoi; Sin, Johnny Kin On; Lai, Pui To
Transient Turn-ON Characteristics of the Fin p-Body IGBT
IEEE Transactions on Electron Devices, v. 62, (8), August 2015, article number 7145407, p. 2555-2561
Feng, Hao; Yang, Wentao; Onozawa, Yuichi; Yoshimura, Takashi; Tamenori, Akira; Sin, Johnny Kin On

Conference paper 5

A Low Substrate Loss, Monolithically Integrated Power Inductor for Compact LED Drivers
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 53-56
Fang, Xiangming; Mak, Tsz Him; Gao, Yuan; Lau, Kei May; Mok, Philip Kwok Tai; Sin, Johnny Kin On
A Novel 3D Transformer for Ultra-Compact Signal Isolation
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 297-300
Wu, Rongxiang; Liao, Niteng; Fang, Xiangming; Sin, Johnny K.O.
Effect of high-temperature thermal treatment on AlGaN/GaN HEMT Epi for monolithic integration
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Ren, Jie; Liu, Chao; Lau, Kei May; Sin, Johnny K.O.
Monolithically Integrated Passives for Power Management System Miniaturization
iLight Workshop 2015, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 16th January 2015
Sin, Johnny K.O.
Reset-sensing quasi-V² single-inductor multiple-output buck converter with reduced cross-regulation
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, March 2015, article number 7104461, p. 935-940
Lee, Albert T.L.; Tan, Siewchong; Hui, S.Y.; Chan, Philip Ching Ho; Sin, Johnny K.O.


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Article 7

A novel integrated power inductor with vertical laminated core for improved L/R ratios
IEEE Electron Device Letters, v. 35, (12), December 2014, article number 2362749, p. 1287-1289
Fang, Xiangming; Wu, Rongxiang; Peng, Lulu; Sin, Johnny Kin On
A Novel SNOS Gate-Controlled, Normally-Off p-i-n Switch
IEEE Electron Device Letters, v. 35, (1), January 2014, article number 6680615, p. 111-113
Zhou, Xianda; Feng, Hao; Sin, Johnny Kin On
A Simple Low Cost Monolithic Transformer for High-Voltage Gate Driver Applications
IEEE Electron Device Letters, v. 35, (1), January 2014, article number 6679248, p. 108-110
Peng, Lulu; Wu, Rongxiang; Fang, Xiangming; Toyoda, Yoshiaki; Akahane, Masashi; Yamaji, Masaharu; Sumida, Hitoshi; Sin, Johnny Kin On
Adaptive high-bandwidth digitally controlled buck converter with improved line and load transient response
IET Power Electronics, v. 7, (3), 2014, p. 515-526
Lee, Albert Tin Leung; Sin, Johnny Kin On; Chan, Philip Ching Ho
Design and characterization of wireless power links for brain-machine interface applications
IEEE Transactions on Power Electronics, v. 29, (10), 2014, article number 6718154, p. 5462-5471
Wu, Rongxiang; Li, Wei; Luo, H.; Sin, Johnny Kin On; Yue, Chik Patrick
Optimization of Monolithic 3D TSV Transformers for High-Voltage Digital Isolators
ECS Journal of Solid State Science and Technology, v. 3, (10), 2014, p. Q207-Q211
Peng, Lulu; Wu, Rongxiang; Fang, Xiangming; Toyoda, Yoshiaki; Akahane, Masashi; Yamaji, Masaharu; Sumida, Hitoshi; Sin, Johnny K.
Scalability of Quasi-Hysteretic FSM-Based Digitally Controlled Single-Inductor Dual-String Buck LED Driver to Multiple Strings
IEEE Transactions on Power Electronics, v. 29, (1), 2014, article number 6482650, p. 501-513
Lee, Albert Tin Leung; Sin, Johnny Kin On; Chan, Philip Ching Ho

Conference paper 5

An Interleaved Backside Silicon-Embedded Transformer with High Isolation Capability
4th International Workshop on Power Supply-on-Chip, Boston, MA, USA, 6-8 October 2014
Liao, N.; Wu, R.X.; Fang, X.M.; Sin, Johnny Kin On
Integrated Magnetics for Eco-friendly LED System-on-a-Chip Applications
The 4th International Power Supply on Chip Workshop (PwrSoC2014), Boston, Massachusetts, USA, 6-8 October 2014
Fang, Xiangming; Sin, Johnny Kin On; Lau, Kei May; Yue, Chik Patrick; Mok, Philip Kwok Tai
Integration Scheme Toward LED System-on-a-Chip (SoC)
Solid-State and Organic Lighting, SOLED 2014; Energy Change Institute, Australian National UniversityCanberra, Australia, 2 December 2014 through 5 December 2014
Mak, Tsz Him; Liu, Zhaojun; Chong, Wing Cheung; Gao, Yuan; Fang, Xiangming; Sin, Johnny Kin On; Mok, Philip Kwok Tai; Lau, Kei May
Poly-Si/-Si(1-x)Ge(x)/si Sandwiched Conductivity Modulated TFT for High-voltage Drivers in Large Area Electronic Applications
European Solid-State Device Research Conference, v. 13-15 Sept. 1999, 1999, article number 1505597, p. 692-695
Zhu, Chunxiang; Sin, J.K.O.
Through Silicon Underfill Dispensing for 3D Die/Interposer Stacking
Proceedings - Electronic Components and Technology Conference, September 2014, article number 6897397, p. 919-924
Le, Fuliang; Lee, Ricky Shi-wei; Lau, Kei May; Yue, Chik Patrick; Sin, Johnny Kin On; Mok, Philip Kwok Tai; Ki, Wing Hung; Choi, Hoi Wai


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Article 8

A Fully Integrated 3D TSV Transformer for High-Voltage Signal Transfer Applications
ECS Solid State Letters, v. 2, (5), 2013
Peng, Lulu; Wu, Rongxiang; Fang, Xiangming; Toyoda, Yoshiaki; Akahane, Masashi; Yamaji, Masaharu; Sumida, Hitoshi; Sin, Johnny Kin On
A Novel Silicon-Embedded Toroidal Power Inductor With Magnetic Core
IEEE Electron Device Letters, v. 34, (2), 2013, article number 6410333, p. 292-294
Fang, Xiangming; Wu, Rongxiang; Peng, Lulu; Sin, Johnny Kin On
BaTiO3 as charge-trapping layer for nonvolatile memory applications
Solid-State Electronics, v. 79, January 2013, p. 285-289
Huang, X.D.; Sin, Johnny K.O.; Lai, P.T.
Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications
IEEE Transactions on Nanotechnology, v. 12, (2), 2013, article number 6392971, p. 157-162
Huang, X.D.; Sin, Johnny K.O.; Lai, P.T.
High-Q Backside Silicon-Embedded Inductor for Power Applications in μH and MHz Range
IEEE Transactions on Electron Devices, v. 60, (1), January 2013, article number 6353195, p. 339-345
Wu, Rongxiang; Sin, Johnny Kin On; Yue, Patrick Chik
Hot Carrier Injection Effects in the Ultrashallow Body SONOS Gate Power MOSFET
IEEE Transactions on Electron Devices, v. 60, (6), 2013, article number 6515194, p. 2008-2014
Zhou, Xianda; Feng, Hao; Sin, Johnny Kin On
Improved Charge-Trapping Characteristics of BaTiO3 by Zr Doping for Nonvolatile Memory Applications
IEEE Electron Device Letters, v. 34, (4), 2013, article number 6471738, p. 499-501
Huang, Xiaodong; Sin, Johnny K.O.; Lai, Puito
Silicon-Embedded Receiving Coil for High-Efficiency Wireless Power Transfer to Implantable Biomedical ICs
IEEE Electron Device Letters, v. 34, (1), 2013, article number 6365746, p. 9-11
Wu, Rongxiang; Raju, Salahuddin; Chan, Man Sun; Sin, Johnny Kin On; Yue, Chik Patrick

Book 1

Integrated Power Devices and TCAD Simulation
Integrated Power Devices and TCAD Simulation / Yue Fu, Zhanming Li, Wai Tung Ng, Johnny K.O. Sin. CRC Press, 2014
Fu, Yue; Li, Zhanming; Ng, Wai Tung; Sin, Johnny Kin On

Conference paper 2

A Novel 3D TSV Transformer Technology for Digital Isolator Gate Driver Applications
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2013, article number 6694399, p. 69-72
Peng, Lulu; Wu, Rongxiang; Fang, Xiangming; Toyoda, Yoshiaki; Akahane, Masashi; Yamaji, Masaharu; Sumida, Hitoshi; Sin, Johnny Kin On
Cost-effective and Eco-friendly LED System-on-a-Chip (SoC)
2013 10th China International Forum on Solid State Lighting, ChinaSSL 2013, 2013, article number 7177356, p. 235-238
Lau, Kei May; Choi, Hoiwai; Ki, Wing-Hung; Lee, Ricky Shi Wei; Mok, Philip Kwok Tai; Sin, Johnny Kin On; Yue, Chik Patrick


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Article 6

Charge-trapping characteristics of Ga2O3 nanocrystals for nonvolatile memory applications
ECS solid state letters, v. 1, (5), 2012, p. Q45-Q47
Huang, Xiaodong; Lai, Puito; Sin, Johnny Kin On
High-Efficiency Silicon-Embedded Coreless Coupled Inductors for Power Supply on Chip Applications
IEEE Transactions on Power Electronics, v. 27, November 2012, p. 4781-4787
Wu, Rongxiang; Sin, Johnny K.O.
LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications
Applied physics. A, Materials science & processing, v. 108, (1), 2012, Jul, p. 229-234
Huang, X.D.; Lai, P.T.; Sin, Johnny K.O.
Nitrided La₂O₃ as charge-trapping layer for nonvolatile memory applications
IEEE Transactions on Device and Materials Reliability, v. 12, (2), 2012, Jun, p. 306-310
Huang, X.D.; Sin, J.K.O.; Lai, P.T.
Performance of nonvolatile memory by using band-engineered SrTiO3/HfON stack as charge-trapping layer
Microelectronics and reliability, v. 52, (11), November 2012, p. 2527-2531
Huang, X.D.; Lai, P.T.; Sin, Johnny K.O.
UIS analysis and characterization of the SONOS gate power MOSFET
IEEE Transactions on Electron Devices, v. 59, (2), 2012, Feb, p. 408-413
Zhou, X.; Ng, J.C.W.; Sin, J.K.O.

Conference paper 4

A New Embedded Inductor for ZVS DC-DC Converter Applications
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, 2012, p. 53-56
Fang, Xiangming; Wu, Rongxiang; Peng, Lulu; Sin, Johnny Kin On
A Planar SONOS Gate Power MOSFET with an Ultra-Shallow Body Region
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2012, 2012, article number 6229031, p. 93-96
Zhou, Xianda; Feng, Hao; Sin, Johnny Kin On
Backside Embedded Inductors for PwrSoC Applications
3rd International Workshop on Power Supply on Chip, San Francisco, USA, 16-18, Nov, 2012
Wu, Rongxiang; Fang, Xiangming; Peng, Lulu; Sin, Johnny Kin On
Wireless power link design using silicon-embedded inductors for brain-machine interface
2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers, Taiwan, April 23-25, 2012, p. 1-4
Wu, Rongxiang; Raju, Salahuddin; Chan, Man Sun; Sin, Johnny Kin On; Yue, Chik Patrick


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Article 5

A Novel Silicon-Embedded Coreless Inductor for High-Frequency Power Management Applications
IEEE electron device letters, v. 32, (1), January 2011, p. 60-62
Wu, Rongxiang; Sin, Johnny K.O.
A Novel SONOS Gate Power MOSFET With Excellent UIS Capability
IEEE electron device letters, v. 32, (10), October 2011, p. 1415-1417
Zhou, Xianda; Ng, Jacky C.W.; Sin, Johnny K.O.
Fluorinated SrTiO₃ as Charge-Trapping Layer for Nonvolatile Memory Applications
IEEE Transactions on Electron Devices, v. 58, (12), December 2011, article number 6062402, p. 4235-4240
Huang, Xiaodong; Sin, Johnny Kin On; Lai, Pui To
Novel silicon-embedded coreless transformer for on-chip isolated signal transfer
IEEE Magnetics Letters, v. 2, 2011
Wu, R.; Sin, J.K.O.; Hui, S.Y.
UIS Analysis and Characterization of the Inverted L-Shaped Source Trench Power MOSFET
IEEE Transactions on Electron Devices, v. 58, (11), November 2011, article number 6016231, p. 3984-3990
Ng, Jacky C.W.; Sin, Johnny Kin On; Sumida, Hitoshi; Toyoda, Yoshiaki; Ohi, Akihiko; Tanaka, Hiroyuki; Nishimura, Takeyoshi; Ueno, Katsunori

Conference paper 2

A Novel Silicon-Embedded Coreless Transformer for Isolated DC-DC Converter Application
Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs, 2011, p. 352-355
Wu, Rongxiang; Sin, Johnny K.O.; Hui, S. Y. (Ron)
Novel silicon-embedded coreless coupled inductors for high efficiency on-chip DC-DC conversion
IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings, 2011, p. 1827-1831
Wu, R.; Sin, J.K.O.


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Article 2

A new 20 V-rated buried-oxide trench-gate bipolar-mode JFET FOR DC/DC converters
IEEE Transactions on Electron Devices, v. 57, (12), 2010, p. 3531-3535
Tian, B.; Wu, Y.; Huang, H.; Guan, L.; Sin, J.K.O.; Kang, B.
A new trench power MOSFET with an inverted L-shaped source region
IEEE Electron Device Letters, v. 31, (11), 2010, p. 1284-1286
Ng, J.C.W.; Sin, J.K.O.; Sumida, H.; Toyoda, Y.; Ohi, A.; Tanaka, H.; Nishimura, T.; Ueno, K.

Conference paper 2

A Novel Low-Voltage Trench Power MOSFET with Improved Avalanche Capability
Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs, 2010, p. 201-204
Ng, Jacky C.W.; Sin, Johnny K.O.; Sumida, Hitoshi; Toyoda, Yoshiaki; Ohi, Akihiko; Tanaka, Hiroyuki; Nishimura, Takeyoshi; Ueno, Katsunori
High performance CMOS-compatible super-junction FINFETs for sub-100V applications
Technical digest - International Electron Devices Meeting, 2010, p. 20.7.1-20.7.4
Yoo, A.; Ng, J.C.W.; Sin, J.K.O.; Ng, W.T.


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Article 2

A Low-Voltage Planar Power MOSFET With a Segmented JFET Region
IEEE transactions on electron devices, v. 56, (8), 2009, AUG, p. 1761-1766
Ng, Jacky C.W.; Sin, Johnny K.O.
A New Isolation Technology for Automotive Power-Integrated-Circuit Applications
IEEE transactions on electron devices, v. 56, (9), 2009, SEP, p. 2144-2149
Sun, Jingmeng; Jiang, Frank X.C.; Guan, Lingpeng; Xiong, Zhibin; Yan, Guizhen; Sin, Johnny K.O.

Conference paper 2

A new internal transparent collector IGB
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2009, 2009, article number 5158058, p. 287-290
Hu, Dongqing; Sin, J.K.O.; Wu, Yu; Kang, Baowei; You, Xuelan; Cheng, Xu
Modeling of internal transparent collector IGBTs and the extraction of electron lifetime in nano-voids layer
2009 IEEE Energy Conversion Congress and Exposition, ECCE 2009, 2009, p. 3948-3953
Hu, D.Q.; Wu, Y.; Kang, B.W.; Jia, Y.P.; Sin, J.K.O.


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Article 1

A novel planar power MOSFET with laterally uniform body and ion-implanted JFET region
IEEE electron device letters, v. 29, (4), 2008, APR, p. 375-377
Ng, Jacky C.W.; Sin, Johnny K.O.; Guan, Lingpeng

Conference paper 4

A Novel Sub-20V Power MOSFET with Improved On-Resistance and Threshold Variation
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2008, 2008, article number 4538905, p. 91-94
Ng, Jacky C. W.; Sin, J.K.O.; Guan, Lingpeng
Characteristics of Monolithic Coreless Transformers for Power Supply-on-Chip Applications
1st International Workshop on Power Supply-On-Chip, Cork, Ireland, pp. 75, Sept. 2008
Wu, R.X.; Su, Y.P.; Sin, J.K.O.; Hui, S.Y.
Evaluation of trench-gate bipolar-mode JFETs used as high-side transistors in low-voltage buck converters
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2008, p. 127-130
Wu, Y.; Tian, B.; Huang, H.; Hu, D.; Sin, J.K.O.; Kang, B.
SJ-FINFET: A new low voltage lateral superjunction MOSFET
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2008, p. 111-114
Onishi, Y.; Wang, H.; Xu, H.P.E.; Ng, W.T.; Wu, R.; Sin, J.K.O.


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Article 1

Transient characterization of the planar DMOS with a Metal/Poly-Si replacement gate
IEEE transactions on electron devices, v. 54, (7), 2007, JUL, p. 1789-1792
Guan, Lingpeng; Sin, Johnny K.O.

Conference paper 2

A power bipolar integrated device with Schottky extension of anode
PESC Record - IEEE Annual Power Electronics Specialists Conference, 2007, p. 997-1000
Wu, Y.; Cheng, X.; Sin, J.K.O.; Kang, B.; Hu, D.
Lifetime control of power fast recovery diode with low emitter efficiency anode
PESC Record - IEEE Annual Power Electronics Specialists Conference, 2007, p. 991-994
Hu, D.; Sin, J.K.O.; Kang, B.; Cheng, X.; Wu, Y.; Xie, S.


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Article 4

A 30 V self-aligned metal/poly-Si replacement gate planar DMOS for DC/DC converters
IEEE electron device letters, v. 27, (11), 2006, NOV, p. 920-922
Guan, Lingpeng; Sin, Johnny K.O.
A fully integrated SOI RF MEMS technology for system-on-a-chip applications
IEEE transactions on electron devices, v. 53, (1), 2006, JAN, p. 167-172
Guan, LP; Sin, JKO; Liu, HT; Xiong, ZB
A new high-temperature thermal sensor based on large-grain polysilicon on insulator
Sensors and Actuators a-physical, v. 130, (Sp. Iss. SI), 2006, AUG 14, p. 129-134
Wu, Z.H.; Lai, P.T.; Sin, Johnny K.O.
Extraction of the inversion and accumulation layer mobilities in n-channel trench DMOSFETs
IEEE transactions on electron devices, v. 53, (8), 2006, AUG, p. 1914-1921
Ng, Jacky C.W.; Sin, Johnny K.O.


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Article 5

A new HCBT with a partially etched collector
IEEE electron device letters, v. 26, (3), 2005, MAR, p. 200-202
Suligoj, T.; Biljanovic, P.; Sin, JKO; Wang, KL
A new polysilicon CMOS self-aligned double-gate TFT technology
IEEE transactions on electron devices, v. 52, (12), 2005, DEC, p. 2629-2633
Xiong, ZB; Liu, HT; Zhu, CX; Sin, JKO
A novel SOI lateral-power MOSFET with a self-aligned drift region
IEEE electron device letters, v. 26, (4), 2005, APR, p. 264-266
Guan, LP; Sin, JKO; Xiong, ZB; Liu, HT
Geometric effect of nickel source on low-temperature polycrystalline silicon TFTs by metal-induced lateral crystallization
IEEE electron device letters, v. 26, (11), 2005, NOV, p. 814-816
Li, JF; Sun, XW; Qi, GJ; Sin, JKO; Huang, ZH; Zeng, XT
Horizontal current bipolar transistor (HCBT) process variations for future RF BiCMOS applications
IEEE transactions on electron devices, v. 52, (7), 2005, JUL, p. 1392-1398
Suligoj, T.; Sin, JKO; Wang, KL

Conference paper 1

A novel drift region self-aligned SOI power MOSFET using a partial exposure technique
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2005, p. 171-174
Guan, L.; Sin, J.K.O.; Xiong, Z.; Liu, H.


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Article 6

A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs
Solid-state electronics, v. 48, (10-11), 2004, OCT-NOV, p. 2047-2050
Suligoj, T.; Liu, H.; Sin, JKO; Tsui, K.; Chu, RM; Chen, KJ; Biljanovic, P.; Wang, KL
A novel self-aligned offset-gated polysilicon TFT using high-kappa, dielectric spacers
IEEE electron device letters, v. 25, (4), 2004, APR, p. 194-195
Xiong, ZB; Liu, HT; Zhu, CX; Sin, JKO
A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation
IEEE electron device letters, v. 25, (9), 2004, SEP, p. 631-633
Wu, N.; Zhang, QC; Zhu, CX; Chan, DSH; Du, AY; Balasubramanian, N.; Li, MF; Chin, A.; Sin, JKO; Kwong, DL
Characteristics of high-kappa spacer offset-gated polysilicon TFTs
IEEE transactions on electron devices, v. 51, (8), 2004, AUG, p. 1304-1308
Xiong, ZB; Liu, HT; Zhu, CX; Sin, JKO
Characterization of the ultrathin vertical channel CMOS technology
IEEE transactions on electron devices, v. 51, (1), 2004, JAN, p. 106-112
Liu, HT; Sin, JKO; Xuan, PQ; Bokor, J.
Improving reliability of poly-Si TFTs with channel layer and gate oxide passivated by NH3/N2O plasma
MICROELECTRONICS RELIABILITY, v. 44, (3), 2004, MAR, p. 435-442
Zeng, XB; Sun, XW; Li, JF; Sin, JKO

Conference paper 7

A Fully Integrated CMOS and High Voltage Compatible RF MEMS Technology
Technical Digest - International Electron Devices Meeting, IEDM, San Francisco, USA, Dec. 2004, pp. 35-38
Guan, L.; Sin, J.K.O.; Liu, H.; Xiong, Z.
A novel low-cost Horizontal Current Bipolar Transistor (HCBT) with the reduced parasitics
Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2004, p. 36-39
Suligoj, T.; Biljanovic, P.; Sin, J.K.O.; Wang, K.L.
A Novel Self-Aligned Lightly Doped-Drain Poly-Si TFT Using a Partial Exposure Technique
Society for Information Display, 2004 International Symposium, Seminar, and Exhibition, Seattle, Washington, USA
Xiong, Z.; Liu, H.; Zhu, C.; Sin, J.K.O.
A novel surface passivation process for HfO₂ Ge MOSFETs
Device Research Conference - Conference Digest, DRC, 2004, p. 19-20
Wu, N.; Zhang, Q.; Zhu, C.; Chan, D.S.H.; Li, M.F.; Balasubramanian, N.; Du, A.Y.; Chin, A.; Sin, J.K.O.; Kwong, D.L.
A simple CMOS self-aligned double-gate poly-Si TFT technology
Meeting Abstracts, 2004, p. 963
Xiong, Z.; Liu, H.; Zhu, C.; Sin, J.K.O.
A Simple CMOS Self-Aligned Double-Gate Poly-Si TFT Technology
Proceedings - Electrochemical Society, 2004, p. 87-91
Xiong, Z.; Liu, H.; Zhu, C.; Sin, J.K.O.
Design, fabrication and characterization of a Bi-directional insulated gate bipolar transistor
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 1, 2004, p. 332-335
Zhao, S.; Sin, J.K.O.; Feng, C.


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Article 10

A general design methodology for the optimal multiple-field-limiting-ring structure using device simulator
IEEE transactions on electron devices, v. 50, (11), 2003, NOV, p. 2273-2279
Cheng, X.; Sin, JKO; Shen, J.; Huai, YJ; Li, RZ; Wu, Y.; Kang, BW
A novel ultrathin vertical channel NMOSFET with asymmetric fully overlapped LDD
IEEE Electron Device Letters, v. 24, (2), February 2003, p. 84-86
Liu, Haitao; Xiong, Zhibin; Sin, Johnny Kin On
An ultrathin vertical channel MOSFET for sub-100-nm applications
IEEE transactions on electron devices, v. 50, (5), 2003, MAY, p. 1322-1327
Liu, HT; Xiong, ZB; Sin, JKO
Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation
MICROELECTRONICS RELIABILITY, v. 43, (1), 2003, JAN, p. 163-166
Or, DCT; Lai, PT; Sin, JKO; Kwok, PCK; Xu, JP
Fast reverse recovery body diode in high-voltage VDMOSFET using cell-distributed Schottky contacts
IEEE transactions on electron devices, v. 50, (5), 2003, MAY, p. 1422-1425
Cheng, X.; Sin, JKO; Kang, BW; Feng, CG; Wu, Y.; Liu, XM
High-temperature thermal sensor based on ultra-thin silicon film for ultra-low-power applications
Solid-state electronics, v. 47, (9), 2003, SEP, p. 1553-1558
Li, B.; Wu, ZH; Lai, PT; Sin, JKO; Liu, BY; Zheng, XR
Implementation and Characterization of the Double-gate MOSFET Using Lateral Solid-phase Epitaxy
IEEE Transactions on Electron Devices, v. 50, (6), 2003, JUN, p. 1552-1555
Liu, HT; Xiong, ZB; Sin, JKO
Improved reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation
Solid-state electronics, v. 47, (8), 2003, AUG, p. 1391-1395
Or, DCT; Lai, PT; Sin, JKO; Xu, JP
Improving hydrogenation efficiency of polycrystalline silicon thin film transistors by a new approach
Microelectronics journal, v. 34, (11), 2003, NOV, p. 1079-1085
Zeng, XB; Sun, XW; Sin, JKO
Optimization of plasma nitridation for reliability enhancement of low-temperature gate dielectric in MOS devices
Solid-state electronics, v. 47, (11), 2003, NOV, p. 2049-2053
Or, DCT; Lai, PT; Sin, JKO

Conference paper 8

A Low-cost Horizontal Current Bipolar Transistor Technology (HCBT) for the BiCMOS Integration with FinFETs
International Semiconductor Device Research Symposium (ISDRS), Washington D.C., pp. 518-519
Suligoj, T.; Liu, H.; Sin, J.K.O.; Tsui, K.; Chen, K.J.; Biljanovic, P.; Wang, K.L.
A Novel High-K Dielectric Spacer Polysilicon Thin-Film Transistor
Proceedings of the 10th International Display Workshops, Fukuoka, Japan, pp. 1671-2
Xiong, Z.; Liu, H.; Zhu, C.; Sin, J.K.O.
A novel self-aligned ultra-thin elevated channel low temperature CMOS poly-Si TFT
THIN FILM TRANSISTOR TECHNOLOGIES VI, PROCEEDINGS, v. 2002, (23), 2003, p. 42-46
Xiong, ZB; Liu, HT; Zhu, CX; Sin, JKO
A step-gate oxide SOI MOSFET for RF power amplifiers in short- and medium-range wireless applications
2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2003, p. 33-36
Liao, XP; Tsui, KKP; Liu, HT; Chen, KJ; Sin, JKO
Ge pMOSFET with MOCVD HfO2 Gate Dielectric
International Semiconductor Device Research Symposium (ISDRS), Washington D.C., pp. 252-253
Wu, N.; Zhang, Q.; Zhu, C.; Li, M.F.; Chan, D.S.H.; Chin, A.; Kwong, D.L.; Bera, L.K.; Balasubramanian, N.; Du, A.Y.; Tung, C.H.; Liu, H.; Sin, J.K.O.
Germanium pMOSFET with HfON Gate Dielectric
International Semiconductor Device Research Symposium (ISDRS), pp. 256-257
Zhang, Q.; Wu, N.; Zhu, C.; Li, M.F.; Chan, D.S.H.; Chin, A.; Kwong, D.L.; Bera, L.K.; Balasubramanian, N.; Du, A.Y.; Tung, C.H.; Liu, H.; Sin, J.K.O.
Improving Reliability of Low-Temperature Poly-Si TFTs by Nitrous Oxide Plasma Treatment
Proc. SID, Baltimore, M.D., USA, pp. 212-215
Zeng, X.; Sun, X.W.; Li, J.; Sin, Johnny K.O.
Improving the CoolMOS? body-diode switching performance with integrated Schottky contacts
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2003, p. 304-307
Cheng, X.; Liu, X.M.; Sin, J.K.O.; Kang, B.W.


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Article 10

A high-performance five-channel NMOSFET using selective epitaxial growth and lateral solid phase epitaxy
IEEE electron device letters, v. 23, (5), 2002, MAY, p. 261-263
Kumar, M.; Liu, HT; Sin, JKO
A novel 3-D BiCMOS technology using selective epitaxy growth (SEG) and lateral solid phase epitaxial (LSPE)
IEEE electron device letters, v. 23, (3), 2002, MAR, p. 151-153
Liu, HT; Kumar, M.; Sin, JKO
A simple, high performance TFSOI complementary BiCMOS technology for low power wireless applications
IEEE transactions on electron devices, v. 49, (1), 2002, JAN, p. 200-202
Kumar, M.; Tan, Y.; Sin, JKO
An Experimental Study on High-Temperature Metallization for Micro-Hotplate-Based Integrated Gas Sensors
Sensors and Actuators B: Chemical, v. 86, (1), August 2002, p. 1-11
Yan, Guizhen; Tang, Zhenan; Chan, Phillip C.H.; Sin, Johnny K.O.; Hsing, I-Ming; Wang, Yangyuan
An Integrated Gas Sensor Technology Using Surface Micro-Machining
Sensors and Actuators B: Chemical, v. 82, (2-3), February 2002, p. 277-283
Chan, Phillip C.H.; Yan, Guizhen; Sheng, Lieyi; Sharma, Rajnish Kumar; Tang, Zhenan; Sin, Johnny K.O.; Hsing, I-Ming; Wang, Yangyuan
Device characteristics of the 3-D BiCMOS technology using selective epitaxial growth and lateral solid phase epitaxy
IEEE transactions on electron devices, v. 49, (12), 2002, DEC, p. 2359-2362
Liu, HT; Kumar, M.; Sin, JKO
Excellent Cross-talk Isolation, High-Q inductors, and Reduced Self-heating in a TFSOI Technology for System-on-a-chip Applications
IEEE Transactions on Electron Devices, v. 49, (4), 2002, APR, p. 584-589
Kumar, M.; Tan, Y.; Sin, JKO
Implementation and characterization of self-aligned double-gate TFT with thin channel and thick source/drain
IEEE transactions on electron devices, v. 49, (5), 2002, MAY, p. 718-724
Zhang, Shengdong; Han, Ruqi; Sin, Johnny K.O.; Chan, Man Sun
Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDD
IEEE transactions on electron devices, v. 49, (8), 2002, AUG, p. 1490-1492
Zhang, Shengdong; Han, Ruqi; Sin, Johnny K.O.; Chan, Man Sun
The partial silicon-on-insulator technology for RF power LDMOSFET devices and on-chip microinductors
IEEE Transactions on Electron Devices, v. 49, (12), 2002, p. 2271-2278
Ren, C.; Cai, J.; Liang, Y.C.; Ong, P.H.; Balasubramanian, N.; Sin, J.K.O.

Conference paper 6

A high performance double-gate SOI MOSFET using lateral solid phase epitaxy
IEEE International SOI Conference, 2002, p. 28-29
Liu, H.; Xiong, Z.; Sin, J.K.O.; Xuan, P.; Bokor, J.
A Novel Self-Aligned Ultra-Thin Elevated Channel Low Temperature CMOS Poly-Si TFT
The 202nd Meeting of the Electrochemical Society, Salt Lake City, Utah, Abstract No. 636
Xiong, Zhibin; Liu, Haitao; Zhu, C.; Sin, Johnny K.O.
Enhanced Reliability for Gate Dielectric of Low-Temperature Polysilicon Thin-Film Transistors by NO-Plasma Nitridation
Proceedings of IEEE Hong Kong Electron Devices Meeting, 35-38
Or, David C.T.; Lai, P.T.; Sin, J.K.O.; Xu, J.P.
High-Current Injection in Spreading-Resistance Temperature Sensor on SOI
Proceedings of IEEE Hong Kong Electron Devices Meeting, 69-72
Wu, Z.H.; Lai, P.T.; Li, Bin; Sin, J.K.O.
The Investigation of an Integrated Gas Sensor Array
Proceedings of IEEE Sensors, v. 1, (1), 2002, article number 1037113, p. 343-343
Yan, Guizhen; Chan, Phillip C.H.; Miao, Min; Sin, Johnny K.O.; Hsing, I-Ming
Ultra-Low-Power Thermal Sensor with Silicon-On-Insulator (SOI) Structure for High-Temperature Applications
Proceedings of IEEE Sensors, v. 1, (2), 2002, p. 1419-1422
Li, B.; Lai, P.T.; Sin, J.K.O.; Liu, B.Y.; Zheng, X.R.; Wu, Z.H.


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Article 18

A 600-V, 10-A trench bipolar junction diode with superior static and dynamic characteristics
IEEE transactions on electron devices, v. 48, (9), 2001, SEP, p. 2143-2147
You, BD; Huang, AQ; Sin, JKO
A novel high performance stacked LDD RF LDMOSFET
IEEE electron device letters, v. 22, (5), 2001, MAY, p. 236-238
Cai, J.; Ren, C.; Balasubramanian, N.; Sin, JKO
A novel self-aligned double-gate TFT technology
IEEE electron device letters, v. 22, (11), 2001, NOV, p. 530-532
Zhang, Shengdong; Han, Ruqi; Sin, Johnny K.O.; Chan, Man Sun
A novel two-step laser crystallization technique for low-temperature poly-Si TFTs
IEEE transactions on electron devices, v. 48, (5), 2001, MAY, p. 1008-1010
Zeng, XB; Xu, ZY; Sin, JKO; Dai, YB; Wang, CG
A SOI LDMOS technology compatible with CMOS, BJT, and passive components for fully-integrated RF power amplifiers
IEEE transactions on electron devices, v. 48, (10), 2001, OCT, p. 2428-2433
Tan, Y.; Kumar, M.; Cai, J.; Sin, JKO
An Improved TMAH Si-Etching Solution Without Attacking Exposed Aluminum
Sensors and Actuators A: Physical, v. 89, (1-2), March 2001, p. 135-141
Yan, Guizhen; Chan, Phillip C.H.; Hsing, I-Ming; Sharma, Rajnish Kumar; Sin, Johnny K.O.; Wang, Yangyuan
An interpretation of reverse current in metal/intrinsic diamond/semiconducting diamond junction diodes
Applied surface science, v. 171, (1-2), 2001, FEB 1, p. 57-62
Huang, QA; Sun, DY; Sin, JKO
An SOI LDMOS/CMOS/BJT technology for integrated power amplifiers used in wireless transceiver applications
IEEE electron device letters, v. 22, (3), 2001, MAR, p. 136-138
Kumar, M.; Tan, Y.; Sin, JKO; Cai, J.
Folded gate LDMOS transistor with low on-resistance and high transconductance
IEEE transactions on electron devices, v. 48, (12), 2001, DEC, p. 2917-2928
Zhu, YZ; Liang, YC; Xu, SM; Foo, PD; Sin, JKO
Investigation and Control of Microcracks in Tin Oxide Gas Sensing Thin-Films
Sensors and Actuators B: Chemical, v. 79, (1), September 2001, p. 39-47
Tang, Zhenan; Chan, Phillip C.H.; Sharma, Rajnish Kumar; Yan, Guizhen; Hsing, I-Ming; Sin, Johnny K.O.
Investigation of Stability and Reliability of Tin Oxide Thin-Film for Integrated Micro-Machined Gas Sensor Devices
Sensors and Actuators B: Chemical, v. 81, (1), December 2001, p. 9-16
Sharma, Rajnish Kumar; Chan, Phillip C.H.; Tang, Zhenan; Yan, Guizhen; Hsing, I-Ming; Sin, Johnny K.O.
Novel isolation structures for TFSOI technology
IEEE electron device letters, v. 22, (9), 2001, SEP, p. 435-437
Kumar, M.; Tan, Y.; Sin, JKO
Optimization of the specific on-resistance of the COOLMOS (TM)
IEEE transactions on electron devices, v. 48, (2), 2001, FEB, p. 344-348
Chen, XB; Sin, JKO
Sensitive, Selective and Stable Tin Dioxide Thin-Films for Carbon Monoxide and Hydrogen Sensing in Integrated Gas Sensor Array Applications
Sensors and Actuators B: Chemical, v. 72, (2), January 2001, p. 160-166
Sharma, Rajnish Kumar; Chan, Phillip C.H.; Tang, Zhenan; Yan, Guizhen; Hsing, I-Ming; Sin, Johnny K.O.
Surface plasma passivation of the polycrystalline silicon thin films by using NH3 or N2O gas
Journal of inorganic materials, v. 16, (4), 2001, JUL, p. 693-696
Zeng, XB; Sin, JKO; Xu, ZY; Rao, R.
Theoretical analysis and experimental characterization of the dummy-gated VDMOSFET
IEEE transactions on electron devices, v. 48, (9), 2001, SEP, p. 2168-2176
Xu, SM; Ren, CH; Lian, YC; Foo, PD; Sin, JKO
多晶硅薄膜的表面处理工艺
無機材料學報, v. 16, (4), July 2001, p. 693-696
曾祥斌; Sin, Johnny K.O.; 徐重陽; 饒瑞
微热板的热测试和热分析
工程熱物理學報, v. 22, (2), March 2001, p. 226-228
顾毓沁; 张荣海; 朱德忠; 孙晓毅; 阎桂珍; 唐祯安; Chan, Philip Ching Ho; Sin, Johnny K.O.; Shing, I-Ming

Conference paper 8

A 3-D BiCMOS technology using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE)
Technical Digest - International Electron Devices Meeting, 2001, p. 729-732
Kumar, M.; Liu, H.; Sin, J.K.O.; Wan, J.; Wang, K.L.
A novel five-channel NMOSFET using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE)
IEEE International SOI Conference, 2001, p. 77-78
Liu, H.; Kumar, M.; Sin, J.K.O.; Jun, W.; Wang, K.L.
A Partial SOI Technology for Single-Chip RF Power Amplifiers
IEDM Tech. Dig., Washington DC
Cai, J.; Ran, C.; Liang, Y.; Balasubramanian, N.; Sin, J.K.O.
A self-aligned double-gate polysilicon TFT technology
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, p. 395-398
Zhang, Shengdong; Han, Ruqi; Sin, Johnny K.O.; Chan, Man Sun
An Effective Method to Increase Sensitivity and Stability of the Integrated Gas Sensor with Sensing Film Annealing at Higher Temperature
International Conference on Solid-State and Integrated Circuit Technology Proceedings, ICSICT, v. 2, 2001, article number 982009, p. 773-776
Yan, Guizhen; Chan, Philip C.H.; Sin, Johnny K.O.; Hsing, I-Ming; Wang, Yangyuan
An Integrated Gas Sensor Technology Using Surface Micro-Machining
Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS), 2001, p. 543-546
Chan, Phillip C.H.; Yan, Guizhen; Sheng, Lieyi; Sharma, Rajnish Kumar; Tang, Zhenan; Sin, Johnny K.O.; Hsing, I-Ming; Wang, Yangyuan
Device Degradation of n-channel Poly-Si TFT's due to High-Field, Hot-Carrier and Radiation Stressing
International Symposium on the Physical and Failure Analysis of ICs, Singapore
Khamesra, A.; Lal, R.; Vasi, J.; Kumar, A.; Sin, J.K.O.
Phase-controlled dimmable CFL with PPFC and switching frequency modulation
PESC Record - IEEE Annual Power Electronics Specialists Conference, v. 2, 2001, p. 951-956
Yau, Elson K.F.; Ki, Wing-Hung; Mok, Philip Kwok Tai; Sin, Johnny Kin On


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Article 16

120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit
IEEE transactions on electron devices, v. 47, (10), 2000, OCT, p. 1980-1985
Xu, SM; Gan, KP; Samudra, GS; Liang, YC; Sin, JKO
A 900-MHz fully integrated SOI power amplifier for single-chip wireless transceiver applications
IEEE journal of solid-state circuits, v. 35, (10), 2000, OCT, p. 1481-1486
Tan, Y.; Kumar, M.; Sin, JKO; Shi, LX; Lau, J.
A high performance ethanol sensor based on field-effect transistor using a LaFeO3 nano-crystalline thin-film as a gate electrode
Sensors and Actuators b-chemical, v. 64, (1-3), 2000, JUN 10, p. 83-87
Zhao, SQ; Sin, JKO; Xu, BK; Zhao, MY; Peng, ZY; Cai, H.
A LDMOS technology compatible with CMOS and passive components for integrated RF power amplifiers
IEEE electron device letters, v. 21, (2), 2000, FEB, p. 82-84
Tan, Y.; Kumar, M.; Sin, JKO; Cai, J.; Lau, J.
A new trench base-shielded bipolar transistor
IEEE transactions on electron devices, v. 47, (8), 2000, AUG, p. 1662-1666
Chen, QF; You, BD; Huang, AQ; Sin, JKO
A novel high-voltage sustaining structure with buried oppositely doped regions
IEEE transactions on electron devices, v. 47, (6), 2000, JUN, p. 1280-1285
Chen, XB; Wang, X.; Sin, JKO
Characteristics of p- and n-channel poly-Si/Si1-xGex/Si Sandwiched Conductivity Modulated Thin-film Transistors
IEEE Transactions on Electron Devices, v. 47, (11), November 2000, p. 2188-2193
Zhu, Chunxiang; Sin, Johnny K O; Kwok, Hoi Sing
Compatibility of CO Gas Sensitive SnO₂/Pt Thin Film with Silicon Integrated Circuit Processing
Sensors and Actuators B: Chemical, v. 64, (1-3), June 2000, p. 49-53
Sharma, Rajnish Kumar; Tang, Zhenan; Chan, Philip C.H.; Sin, Johnny K.O.; Hsing, I-Ming
Gas chromatographic study on adsorption selectivity of tin dioxide gas sensor to organic vapors
Sensors and Actuators b-chemical, v. 66, (1-3), 2000, JUL 25, p. 156-158
Wang, DK; Ma, LZ; Zhao, GL; Tang, ZN; Chan, PCH; Sin, JKO; Sheng, LY
Novel self-protected MOS-gated thyristor
Tien Tzu Hsueh Pao/Acta Electronica Sinica, v. 28, (11), 2000, p. 22-24+35
Gao, Y.M.; Sin, J.K.O.; Xu, S.M.
State-of-the-art in Micro-Hotplates
International Journal of Nonlinear Sciences and Numerical Simulation, v. 1, (SUPPL.), 2000, p. 355-360
Tang, Z.; Li, X.; Cheng, G.; Chan, P.C.H.; Sin, J.K.O.
Study of the effects of rapid thermal annealing in generation-recombination noise in MBE grown GaN thin films
MICROELECTRONICS RELIABILITY, v. 40, (11), 2000, NOV, p. 1905-1909
Surya, C.; Zhu, CF; Leung, BH; Fong, WK; Cheng, CC; Sin, JKO
Three-stage large capacitive load amplifier with damping-factor-control frequency compensation
IEEE journal of solid-state circuits, v. 35, (2), 2000, FEB, p. 221-230
Leung, Ka Nang; Mok, Philip Kwok Tai; Ki, Wing Hung; Sin, Johnny Kin On
Ultra-thin elevated channel poly-Si TFT technology for fully-integrated AMLCD system on glass
IEEE transactions on electron devices, v. 47, (3), 2000, MAR, p. 569-575
Zhang, SD; Zhu, CX; Sin, JKO; Li, JN; Mok, PKT
多晶硅薄膜的等离子氢化新工艺
微電子學=Microelectronics, v. 30, (6), December 2000, p. 415-417
曾祥斌; 徐重阳; Sin, Johnny K. O.; 王长安; 赵伯芳; 周雪梅; 张洪涛; 饶瑞
自保护MOS栅晶闸管
電子學報=Acta Electronica Sinica, v. 28, (11), November 2000, p. 22-24
高玉民; 单建安; 许曙明

Conference paper 11

A 900MHz SOI fully-integrated RF power amplifier for wireless transceivers
Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2000, p. 382-383
Kumar, M.; Tan, Y.; Sin, J.; Shi, L.; Lau, J.
A SOI LDMOS/CMOS/BJT technology for fully-integrated RF power amplifiers
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2000, p. 137-140
Tan, Y.; Kumar, M.; Sin, J.K.O.; Shi, L.; Lau, J.
An Improved TMAH Si-etching Solution without Attacking Exposed Aluminum
Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS), 2000, p. 562-567
Yan, Guizhen; Chan, Philip C.H.; Hsing, I-Ming; Sharma, Rajnish Kumar; Sin, Johnny K.O.
Analysis on an alternative structure of damping-factor-control frequency compensation
ISCAS 2000: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - PROCEEDINGS, VOL II: EMERGING TECHNOLOGIES FOR THE 21ST CENTURY, 2000, p. 545-548
Leung, Ka Nang; Mok, Philip Kwok Tai; Ki, Wing Hung; Sin, Johnny Kin On
Double-side packaged, high power IGBTs for improved thermal and switching characteristics
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2000, p. 229-232
Zhao, S.; Sin, J.K.O.
IC controller for phase-controlled dimmable compact fluorescent lamps with closed-loop control
Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, 2000, p. 503-506
Chan, Wilson W.S.; Mok, Philip Kwok Tai; Ng, Alex T.K.; Ki, Wing-Hung; Sin, Johnny Kin On
Investigation of Sintering Characteristics of Composite Multilayer Metallization for MEMS Device Applications
International Symposium on Smart Structures & Microsystems, Hong Kong, 19 - 21 October 2000
Yan, Guizhen; Tang, Zhenan; Chan, Philip C.H.; Sharma, Rajnish Kumar; Sin, Johnny K.O.; Hsing, I-Ming; Wang, Yangyuan
Lamp Modeling for Design of Dimmable Electronic Ballasts
IEEE Power Electronics Specialists Conference (PESC), v. 3, 2000, p. 1358-1362
Ng, Tai Kai; Ki, Wing-Hung; Mok, Philip Kowk Tai; Sin, Johnny Kin On
Optimization of silicon Spreading-Resistance Temperature sensor
Proceedings of IEEE Hong Kong Electron Devices Meeting, v. 2000, p. 20-23
Li, Bi; Lai, P.T.; Chan, C.L.; Sin, Johnny Kin On
Simple, High Performance Complementary TFSOI BiCMOS Technology with Excellent Cross-Talk Isolation and High-Q Inductors for Low Power Wireless Applications
IEEE International SOI Conference, 2000, p. 142-143
Kumar, Mahender; Tan, Yue; Sin, Johnny K.O.
Static and dynamic characteristics of 600-V, 10-A trench bipolar junction diodes
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2000, p. 233-236
You, B.; Huang, A.Q.; Sin, J.K.O.; Xu, A.


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Article 10

A new lateral trench-gate conductivity modulated power transistor
IEEE transactions on electron devices, v. 46, (8), 1999, AUG, p. 1788-1793
Cai, J.; Sin, JKO; Mok, PKT; Ng, WT; Lai, PPT
A novel emitter-sharpened double-gate race-track-shaped field emitter structure
IEEE electron device letters, v. 20, (12), 1999, DEC, p. 621-623
Wang, BP; Huang, ZP; Sin, JKO; Poon, VMC; Tang, YM; Wang, C.; Xue, KX; Tong, LS
A novel ultrathin elevated channel low-temperature poly-Si TFT
IEEE electron device letters, v. 20, (11), 1999, NOV, p. 569-571
Zhang, SD; Zhu, CX; Sin, JKO; Mok, PKT
A P-channel poly-Si/Si1-xGex/Si sandwiched conductivity modulated thin-film transistor
IEEE electron device letters, v. 20, (9), 1999, SEP, p. 470-472
Zhu, CX; Sin, JKO
Analysis of high-voltage trench bipolar junction diode (TBJD)
Solid-state electronics, v. 43, (9), 1999, SEP, p. 1777-1783
You, BD; Huang, AQ; Sin, JKO
Characteristics of P-channel polysilicon conductivity modulated thin-film transistors
IEEE transactions on electron devices, v. 46, (7), 1999, JUL, p. 1406-1410
Zhu, CX; Sin, JKO; Ng, WT
Determination of the excess carrier lifetime in the collector region of silicon power bipolar transistors
IEEE transactions on electron devices, v. 46, (8), 1999, AUG, p. 1782-1787
Wu, Y.; Sin, JKO; Kang, BW; Guo, ZT; Cheng, X.
Influence of lateral electric field on the anomalous leakage current in polysilicon TFT's
IEEE electron device letters, v. 20, (1), 1999, JAN, p. 27-29
Kumar, KPA; Sin, JKO
Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices
IEEE transactions on electron devices, v. 46, (5), 1999, MAY, p. 1036-1041
Zhang, SD; Sin, JKO; Lai, TML; Ko, PK
Spreading-resistance temperature sensor on silicon-on-insulator
IEEE electron device letters, v. 20, (11), 1999, NOV, p. 589-591
Lai, PT; Li, B.; Chan, CL; Sin, JKO

Conference paper 7

A LDMOS Technology Compatible with CMOS, BJT, and Passive Components for Integrated RF Power Amplifiers
European Solid-State Device Research Conference, v. 13-15 Sept. 1999, article number 1505478, p. 216-219
Tan, Yue; Kumar, M?hender P.Sridhar; Sin, K.O.; Cai, Jun; Lau, Jack T.F.
A New Approach to the Integration of SnO₂/Pt Thin Film as CO Gas Sensor
10th International Conference on Solid-State Sensors and Actuators, Sendai, Japan, 7 - 10 June 1999
Sharma, Rajnish Kumar; Tang, Zhenan; Chan, Phillip C.H.; Sin, Johnny K.O.; Hsing, I-Ming
Damping-factor-control frequency compensation technique for low-voltage low-power large capacitive load applications
1999 IEEE International Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC, San Francisco, CA, USA, 17 Feb 1999, p. 158-159
Leung, Ka Nang; Mok, Philip Kwok Tai; Ki, Wing Hung; Sin, Johnny Kin On
Design of monolithic RF power amplifier using bulk BiCMOS process
Midwest Symposium on Circuits and Systems, v. 1, 1999, p. 10-13
Chan, W.C.; Mok, Philip K.T.; Sin, Johnny K.O.; Ng, W.T.
Experimental characterization of p-channel polysilicon conductivity modulated thin-film transistors
ASID'99: Proceedings of the 5th Asian Symposium on Information Display, 1999, p. 287-292
Zhu, Chunxiang; Sin, Johnny K O; Kwok, Hoi Sing
Phase-controlled dimmable electronic ballast for fluorescent lamps
IEEE Power Electronics Specialists Conference (PESC), v. 2, 1999, p. 1121-1125
Ki, Wing-Hung; Shi, Jiying; Yau, Elson; Mok, Philip Kwok Tai; Sin, Johnny Kin On
Ultra-thin Elevated Channel Low Temperature Poly-si tfts for Fully-integrated AMLCD Systems on Glass
Proceeding of the 29th European Solid-State Device Research Conference, IEEE, 1999, p. 708-711
Zhu, Chunxiang; Zhang, Shengdong; Sin, Johnny; Mok, Philip K.T.


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Article 7

A low-power CMOS compatible integrated gas sensor using maskless tin oxide sputtering
Sensors and Actuators b-chemical, v. 49, (1-2), 1998, JUN 25, p. 81-87
Sheng, LY; Tang, ZN; Wu, J.; Chan, PCH; Sin, JKO
A novel crosstalk isolation structure for bulk CMOS power IC's
IEEE transactions on electron devices, v. 45, (7), 1998, JUL, p. 1580-1586
Chan, WWT; Sin, JKO; Wong, SS
A novel self-aligned bidirectional MIM diode with transparent junctions for AM-LCD's
IEEE electron device letters, v. 19, (6), 1998, JUN, p. 192-194
Zhang, SD; Sin, JKO
An Integrated Gas Sensor Based on Tin Oxide Thin-film and Improved Micro-hotplate
Sensors and Actuators B-chemical, v. 46, (3), 1998, MAR 15, p. 174-179
Tang, Zhenan; Fung, Samuel; Wong, Darwin T.W.; Chan, Philip Ching Ho; Sin, Johnny K O; Cheung, Peter W.
An interpretation of SiO2-induced emission instability in silicon field emitter
Applied surface science, v. 136, (1-2), 1998, OCT, p. 36-40
Huang, QA; Sin, JKO; Poon, MC
Kink-free polycrystalline silicon double-gate elevated-channel thin-film transistors
IEEE transactions on electron devices, v. 45, (12), 1998, DEC, p. 2514-2520
Kumar, A.; Sin, JKO; Nguyen, CT; Ko, PK
Numerical and experimental characterization of single- and double-gate race-track-shaped field emitter structures
IEEE transactions on electron devices, v. 45, (2), 1998, FEB, p. 554-559
Wang, BP; Sin, JKO; Cai, J.; Poon, VMC; Wang, C.; Tang, YM; Tong, LS

Conference paper 3

Fabrication and characteristics of emitter-sharpened double-gate race-track-shaped field emitter structure
Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, v. 1998, p. 94-94
Wang, Baoping; Huang, Zhongping; Sin, Johnny Kin On; Wang, Chen; Xue, Kunxing
New trench base-shielded bipolar transistor
IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD), 1998, p. 169-172
Chen, Qufei; Sin, Johnny K.O.; Chen, Qixiu
Process windows of nickel silicide films
Advanced Metallization and Interconnect Systems for ULSI Applications in 1997; San Diego, CA; USA; 30 Sept.-2 Oct. 1997, pp. 705-709. 1998
Poon, Vincent Ming Cheong; Deng, F.; Chan, Man Sun; Qiao, D.J.; Zhang, Weiquan; Lau, S.S.; Wong, Hongmei; Sin, Johnny K.O.; Ho, Chenming


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Article 8

A field-enhanced generation model for field emission from p-type silicon
IEEE electron device letters, v. 18, (12), 1997, DEC, p. 616-618
Huang, QA; Qin, M.; Zhang, B.; Sin, JKO; Poon, MC
An analytical model for electric field distribution of positively beveled abrupt PN junctions
IEEE transactions on electron devices, v. 44, (5), 1997, MAY, p. 869-873
Chen, XB; Sin, JKO; Zhang, M.; Wang, B.
Field emission from silicon including continuum energy and surface quantization
Applied surface science, v. 119, (3-4), 1997, OCT, p. 229-236
Huang, QA; Sin, JKO; Poon, MC
Field emission from surface states of silicon
Journal of applied physics, v. 81, (11), 1997, JUN 1, p. 7589-7594
Huang, QA; Qin, M.; Zhang, B.; Sin, JKO
Numerical modeling of the disk-edge field emitter triode
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 15, (2), 1997, MAR-APR, p. 394-397
Wang, C.; Wang, BP; Zhao, HW; Sin, JKO; Poon, MC
Study of a novel T-shaped disk-edge field emitter structure
International journal of electronics, v. 83, (3), 1997, SEP, p. 299-305
Wang, C.; Zhao, HW; Yin, HC; Wang, BP; Sin, JKO; Tong, LS
Technique for fabricating self-aligned gates onto silicon field emitter arrays
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 15, (5), 1997, SEP-OCT, p. 1682-1684
Zhu, CC; Guan, H.; Liu, WD; Li, TY; Sin, JKO
Theory and experiments on r.f. sputtered tin oxide thin-films for gas sensing applications
Sensors and Actuators b-chemical, v. 43, (1-3), 1997, SEP, p. 161-164
Tang, ZN; Jiang, GP; Chan, PCH; Sin, JKO; Lau, SS

Conference paper 14

A Low-power CMOS Compatible Integrated Gas Sensor Using Maskless Tin Oxide Sputtering
International Conference on Solid-State Sensors and Actuators, Proceedings, v. 2, 1997, p. 939-942
Sheng, Lie Yi; Tang, Zhenan; Wu, Jian; Chan, Philip Ching Ho; Sin, Johnny K O
A simple polysilicon TFT technology for display systems on glass
Technical digest - International Electron Devices Meeting, 1997, p. 515-518
Kumar, Anish K P; Sin, Johnny K O
Characterization of light emitting porous polycrystalline silicon films
Materials Research Society Symposium - Proceedings, v. 452, 1997, p. 415-420
Poon, M.C.; Han, P.G.; Sin, J.K.O.; Wong, H.; Ko, P.K.
Integration of SnO sub(2) thin-film onto micro-hotplate for gas sensor applications
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 145-148
Sheng, Lie-yi; Chan, Philip C.H.; Sin, Johnny K.O.
Mechanisms of field emission from diamond films
Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, v. 1997, p. 300-304
Huang, Qing An; Qin, Ming; Zhang, Bing; Sin, Johnny Kin On
Nanostructural study of luminescent porous polycrystalline silicon
Pro. in 1997 MRS Spring meeting, San Francisco, 1997
Poon, Vincent M.C.; Han, P.G.; Sin, Johnny K.O.; Wong, H.
On The Leakage Current Mechanism In Non-uniform Film Polycrystalline Silicon TFTs
Proceedings of the Asian Symposium on Information Display, 1997, p. 199-202
Kumar, Anish K P; Sin, Johnny K O; Kwok, Hoi Sing
Porous Silicon Organic Vapor and Humidity Sensor
Materials Research Society Symposia Proceedings, v. 459, 1997, p. 183-188
Poon, M.C.; Sin, Johnny K O; Wong, Hei; Han, P.G.; Kwok, W.H.; Bow, Y.C.
Reverse channel floating base emitter switched thyristor (RFB-EST)
Technical Digest - International Electron Devices Meeting, IEDM, v. 1997, p. 355-358
Xu, Shuming; Constapel, Rainer; Silber, Dieter; Sin, Johnny Kin On
Simple method to design resonant circuits of electronic ballast for fluorescent lamps
Proceedings - IEEE International Symposium on Circuits and Systems, v. 3, 1997, p. 1744-1747
Li, Zhi; Mok, Philip Kwok Tai; Ki, Wing-Hung; Sin, Johnny Kin On
Simulated gate current characteristics of the race-track-shaped field emitter structures
Proceedings of the Asian Symposium on Information Display, 1997, p. 141-144
Wang, Baoping; Sin, Johnny K.O.; Poon, M.C.; Wang, Chen; Tang, Yongming
Thermal modeling of micro-hotplates for integrated sensor applications
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 149-152
Wong, Darwin T.W.; Chan, Philip C.H.; Sheng, Lie-yi; Sin, Johnny K.O.
Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 65-68
Poon, Vincent Ming Cheong; Deng, Fei; Wong, Hei; Wong, Man; Sin, Johnny K O; Lau, Silvanus S.; Ho, C. H.; Han, P. G.
Thermal stability of nickel silicide films in submicron p-type polysilicon lines
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 54-58
Poon, Vincent Ming Cheong; Deng, F.; Wong, Hongmei; Chan, Man Sun; Sin, Johnny K O; Lau, S.S.; Ho, Chenmei; Han, P.G.


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Article 7

A power IC technology with excellent cross-talk isolation
IEEE electron device letters, v. 17, (10), 1996, OCT, p. 467-469
Chan, WWT; Sin, JKO; Mok, PKT; Wong, SS
Electrostatic analysis of field emission triode with volcano-type gate
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 14, (3), 1996, MAY-JUN, p. 1938-1941
Wang, BP; Tong, LS; Sin, JKO; Poon, VMC
Optimizing polysilicon thin-film transistor performance with chemical-mechanical polishing and hydrogenation
IEEE electron device letters, v. 17, (11), 1996, NOV, p. 518-520
Chan, ABY; Nguyen, CT; Ko, PK; Wong, M.; Kumar, A.; Sin, J.; Wong, SS
Study of luminescent porous polycrystalline silicon thin films
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 14, (2), 1996, MAR-APR, p. 824-826
Han, PG; Poon, MC; Ko, PK; Sin, JKO; Wong, H.
Thermal analysis and design of a micro-hotplate for integrated gas-sensor applications
Sensors and Actuators a-physical, v. 54, (1-3), 1996, JUN, p. 482-487
Fung, SKH; Tang, ZN; Chan, PCH; Sin, JKO; Cheung, PW
大面积金属场致发射波长阵列制造的新方法
电子学报=Acta Electronica Sinica, v. 24, (11), November 1996, p. 48-51
李天英; 朱长纯; 薛耀国; 张声良; 单建安
真空微电子平板显示器工艺研究
电子学报=Acta Electronica Sinica, v. 24, (11), November 1996, p. 119-121
皇甫鲁江; 朱长纯; 淮永进; 铁执玲; 单建安; 郭彩林

Conference paper 11

A Fast Switching Insulated-Gate P-I-N Diode Controlled Thyristor Structure
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 1997, p. 122-125
Jun, Cai; Sin, Johnny K O; Poon, Vincent Ming Cheong; Ng, Wai Tung; Lai, Peter P.T.
Characterization of sputtered tin oxide thin-films for gas sensing applications
6th International Meeting on Chemical Sensors, Gaithersburg, Maryland, USA, 22-25 June 1996
Tang, Zhenan; Jiang, Guoping; Chan, Philip Ching Ho; Sin, Johnny K.O.; Lau, Silvanus S.W.
CMOS latchup characterization for LDMOS/LIGBT power integrated circuits
ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, p. 15-18
Chan, WWT; Sin, JKO; Mok, PKT; Wong, SS
Drift region doping effects on high voltage conductivity modulated thin film transistors
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1996, p. 37-39
Kumar, Anish K.P.; Sin, Johnny K.O.; Poon, Vincent M.C.
High Voltage Characteristics of Polycrystalline Silicon Conductivity Modulated Thin Film Transistors
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 1997, p. 78-81
Kumar, Anish K.P.; Sin, Johnny K O; Poon, M.C.
Nanostructural Study of Luminescent Porous Polycrystalline Silicon
Materials Research Society Symposium Proceedings, v. 431, Jan 1996, p. 265-270
Poon, Vincent Ming Cheong; Han, P.G.; Sin, Johnny K.O.; Wong, Hei
Novel single- and double-gate race-track-shaped field emitter structures
Technical Digest - International Electron Devices Meeting, 1996, p. 313-316
Wang, Baoping; Sin, Johnny K.O.; Cai, Jun; Poon, M.C.; Tang, Yongming; Wang, Chen; Tong, Linsu
On the capacitance of vacuum microelectronic devices with different field emitter shapes
IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, 1996, p. 509-513
Wang, BP; Tang, YM; Sin, JKO; Poon, VMC
Sensing Mechanism of Polymer for Selectivity Enhancement of Gas Sensors
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 1996, p. 217-220
Wong, Kenneth K.L.; Tang, Zhenan; Sin, Johnny K O; Chan, Philip Ching Ho; Cheung, Peter W.; Hiraoka, Hiroyuki
SIMNI SOI Formed by High Intensity Nitrogen Implantation
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1996, p. 25-28
Poon, Vincent Ming Cheong; Wong, Sai Peng; Lam, Yat Wah; Chu, P.K.; Sin, Johnny Kin On
Structural properties and electron states of amorphous diamond-like carbon
SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, p. 257-260
Jun, C.; Sin, JKO; Wang, KL


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Article 2

A CONDUCTIVITY MODULATED POLYSILICON THIN-FILM-TRANSISTOR
IEEE electron device letters, v. 16, (11), 1995, NOV, p. 521-523
KUMAR, A.; SIN, JKO; WONG, M.; POON, VMC
Micro-Hotplate for Integrated Thin-Film Gas Sensors
Journal of the Chinese Institute of Electrical Engineering, v. 2, (1), 1995, p. 75-79
Fung, Samuel; Tang, Zhenan; Chan, Philip Ching Ho; Sin, Johnny K.O.; Cheung, Peter W.

Conference paper 15

A Finite Width Impurity Source Model for Linear Doping Profiles
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 432-435
Lai, Tommy M L; Sin, Johnny K O; Ko, Ping Keung
An automated precision gas sensor characterization system
1995 IEEE TENCON - ASIA-PACIFIC MICROELECTRONICS 2000, PROCEEDINGS, 1995, p. 187-190
Tang, ZN; Wong, DTW; Chan, PCH; Sin, JKO; Fung, SKH; Cheung, PW
An Effective Cross-Talk Isolation Structure for Power IC Applications
Technical Digest - International Electron Devices Meeting, 1995, p. 971-974
Chan, Wilson W T; Sin, Johnny K O; Wong, Simon
Cross-Talk Prevention for Power Integrated Circuits
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 428-431
Chan, Wilson W T; Wong, Felix C Y; Sin, Johnny K O; Wong, Simon
Fast Numerical Method for Semiconductor Device Simulation
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 218-221
Wong, Tinyan; Poon, Vincent Ming Cheong; Sin, Johnny K O; Wong, Man; Lo, Taichin; Wong, Hei
Implementation of linear doping profiles for high voltage thin-film SOI devices
IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD), 1995, p. 315-320
Lai, Tommy M.L.; Sin, Johnny K.O.; Wong, Man; Poon, Vincent M.C.; Ko, Ping K.
Latch-Up Characteristics of a Trench-Gate Conductivity Modulated Power Transistor
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 424-427
Jun, Cai; Sin, Johnny K O; Ng, Wai Tung; Lai, Peter P T
Luminescent Porous Polycrystalline Silicon Film
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 67-70
Han, P.G.; Poon, Vincent Ming Cheong; Ko, Ping Keung; Sin, Johnny K O; Wong, Man; Wong, Hei
New Numerical Method for Semiconductor Device Simulation
International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1995, p. 622-624
Poon, Vincent Ming Cheong; Wong, Tinyan; Sin, Johnny K O; Wong, Man
Off-Current Characteristics of Conductivity Modulated TFT
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 52-55
Kumar, Anish K P; Sin, Johnny K O
Photoluminescent Porous Polycrystalline Silicon
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1995, p. 2-5
Han, P.G.; Poon, Vincent Ming Cheong; Sin, Johnny K O; Wong, Man
Selectivity Enhancement of Tin Dioxide Gas Sensor with Polymer Membrane
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 179-182
Wong, Kenneth K L; Tang, Zhenan; Sin, Johnny K O; Chan, Philip Ching Ho; Cheung, Peter W.; HiHiraoka, Hiroyuki
Study on Selectivity Enhancement of Tin Dioxide Gas Sensor Using Non-Conducting Polymer Membrane
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1995, p. 42-45
Wong, Kenneth K.L.; Tang, Zhenan; Sin, Johnny K.O.; Chan, Philip Ching Ho; Cheung, Peter W.; Hiraoka, Hiroyuki
Thermal analysis and design of a micro-hotplate for integrated gas sensor applications
IEEE, PISCATAWAY, NJ,, Vol. 1, pp. 818-821. 1995
Fung, Samuel KH; Tang, Zhenan; Chan, Philip CH; Sin, Johnny KO; Cheung, Peter W.
Thermal Analysis and Design of a Micro-Hotplate for Integrated Gas Sensor Applications
International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Proceedings, v. 1, 1995, p. 818-821
Fung, Samuel; Tang, Zhenan; Chan, Philip Ching Ho; Sin, Johnny K O; Cheung, Peter W.


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Conference paper 1

Multimedia Textbook Paradigm: A Demonstration in Solid State Device Electronics
1994 IEEE First International Conference on Multi-Media Engineering Education Proceedings, 1994, p99-107.
Nguyen, C.T.; Wong, Man; Sin, J.K.O.; Smith, K.C.


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Article 1

ANALYSIS AND CHARACTERIZATION OF THE SEGMENTED ANODE LIGBT
IEEE transactions on electron devices, v. 40, (7), 1993, JUL, p. 1300-1306
SIN, JKO; MUKHERJEE, S.


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Article 1

Lateral Insulated-Gate Bipolar Transistor (LIGBT) with a Segmented Anode Structure
IEEE Electron Device Letters, v. 12, (2), February 1991, p. 45-47
Sin, J.K.O.; Mukherjee, S.

Conference paper 1

Fast LIGBT Switching Due to Plasma Confinement Through Pulse Width Control
3rd International Symposium on Power Semiconductor Devices & ICs, Baltimore, April 1991
Wacyk, I.; Jayaraman, R.; Casey, L.; Sin, J.K.O.


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Article 1

Nonuniform and Latchup Current Detection in Lateral Conductivity Modulated FET's
IEEE Electron Device Letters, v. 11, (6), June 1990, p. 250-252
Sin, J.K.O.; Mukherjee, S.

Conference paper 1

Lateral Insulated Gate Bipolar Transistor (LIGBT) with a Segmented Anode Structure
Device Research Conference, Santa Barbara, CA, June 1990
Sin, J.K.O.; Mukherjee, S.


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Article 3

High Voltage Characteristics of Resurfed Schottky Injection FET's
Solid-State Electronics, v. 32, (4), 1989, p. 317-322
Sin, J.K.O.; Salama, C.A.T.; Mukherjee, S.; Rumennik, V.
The SINFET--A Schottky Injection MOS-Gated Power Transistor
IEEE Trans. Electron Devices, v. 33, (12), December 1986, p. 1940-1947
Sin, J.K.O.; Salama, C.A.T.; Hou, L.Z.
Transient Characteristics of n-channel Hybrid Schottky Injection FET's
IEEE Trans. Electron Devices, v. 36, (5), May 1989, p. 993-1000
Sin, J.K.O.; Salama, C.A.T.; Hou, L.Z.

Conference paper 1

Conductivity Modulation Effect in High Voltage n-channel Schottky Injection FETs
Proceedings of the Symposium on High Voltage and Smart Power ICs, Los Angeles, May 1989, p. 104-113
Sin, J.K.O.; Mukherjee, S.


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Conference paper 1

P-channel Schottky Injection Field Effect Transistors
Proc. IEDM, 1987, p. 770-773
Ng, W.T.; Salama, C.A.T.; Sin, J.K.O.


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Article 2

Hybrid Schottky Injection MOS-Gated Power Transistor
Electron. Lett., v. 22, (19), September 1986, p. 1003-1005
Sin, J.K.O.; Salama, C.A.T.
Wideband DMOS Amplifier Competes with Bipolars
Microwaves & RF, v .25, (6), June 1986, p. 113-120
Sin, J.K.O.; Salama, C.A.T.

Conference paper 2

A Modified Schottky Injection High Voltage MOS-Gated Transistor
Third Canadian Semiconductor Technology Conference, Ottawa, Canada, Auguest 1986, p. 67
Sin, J.K.O.; Salama, C.A.T.
Analysis and Characterization of the Hybrid Schottky Injection Field Effect Transistor
Proc. IEDM, December 1986, p. 222-225
Sin, J.K.O.; Salama, C.A.T.; Hou, L.Z.


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Article 2

High-Frequency Distortion Analysis of DMOS Transistors
Solid-State Electronics, v. 28, (12), 1985, p. 1223-1233
Sin, J.K.O.; Salama, C.A.T.
The SINFET: A New High Conductance, High Switching Speed MOS-Gated Transistor
Electron. Lett., v. 21, (24), November 1985. p. 1134-1136
Sin, J.K.O.; Salama, C.A.T.


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2016 9

A low recovery loss reverse-conducting IGBT with metal/P-body Schottky junctions for hard-switching applications
ECS Journal of Solid State Science and Technology, v. 5, (2), 2016, p. Q61-Q67
Feng, Hao; Yang, Wentao; Sin, Johnny K.O. Article
A Novel Double-Side Silicon-Embedded Transformer for 10-MHz, 1-kV-Isolation, Compact Power Transfer Applications
IEEE Transactions on Electron Devices, v. 63, (11), November 2016, article number 7579232, p. 4542-4545
Wu, Rongxiang; Liao, Niteng; Fang, Xiangming; Sin, Johnny K.O. Article
A Novel Sloped Field Plate-Enhanced Ultra-Short Edge Termination Structure
IEEE Electron Device Letters, v. 37, (4), April 2016, article number 7438992, p. 471-473
Yang, Wentao; Feng, Hao; Fang, Xiangming; Onozawa, Yuichi; Tanaka, Hiroyuki; Sin, Johnny Kin On Article
Analytical Modeling of AC Resistance in Thick Coil Integrated Spiral Inductors
IEEE Transactions on Electron Devices, v. 63, (2), February 2016, article number 7362166, p. 760-766
Fang, Xiangming; Wu, Rongxiang; Sin, Johnny K.O. Article
Improved Charge-Trapping Characteristics of ZrO₂ by Al Doping for Nonvolatile Memory Applications
IEEE Transactions on Device and Materials Reliability, v. 16, (1), March 2016, article number 7353132, p. 38-42
Huang, Xiaodong; Shi, Runpu; Sin, Johnny K.O.; Lai, Puito Article
Nb-doped Ga₂O₃ as Charge-trapping Layer for Nonvolatile Memory Applications
Microelectronics Reliability, v. 65, October 2016, p. 64-68
Shi, R.P.; Huang, X.D.; Sin, Johnny K.O.; Lai, P.T. Article
Y-Doped BaTiO₃ as a Charge-Trapping Layer for Nonvolatile Memory Applications
IEEE Electron Device Letters, v. 37, (12), December 2016, article number 7582372, p. 1555-1558
Shi, Runpu; Huang, Xiaodong; Sin, Johnny K.O.; Lai, Pui To Article
A 1200 V-class Fin P-body IGBT with Ultra-narrow-mesas for Low Conduction Loss
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520813, p. 203-206
Feng, Hao; Yang, Wentao; Onozawa, Yuichi; Yoshimura, Takashi; Tamenori, Akira; Sin, Johnny K O Conference paper
A Novel Edge Termination Structure for Achieving the Ideal Planar Junction Breakdown Voltage
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520834, p. 287-290
Yang, Wentao; Feng, Hao; Fang, Xiangming; Onozawa, Yuichi; Tanaka, Hiroyuki; Sin, Johnny K O Conference paper

2015 10

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance
IEEE Electron Device Letters, v. 36, (6), June 2015, article number 7094237, p. 591-593
Feng, Hao; Yang, Wentao; Onozawa, Yuichi; Yoshimura, Takashi; Tamenori, Akira; Sin, Johnny K.O. Article
A Silicon-Embedded Transformer for High-Efficiency, High-Isolation, and Low-Frequency On-Chip Power Transfer
IEEE Transactions on Electron Devices, v. 62, (1), January 2015, article number 6964808, p. 220-223
Wu, Rongxiang; Liao, Niteng; Fang, Xiangming; Sin, Johnny Kin On Article
Nb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications
Applied Physics Letters, v. 107, (16), October 2015, article number 163501
Shi, Runpu; Huang, X.D.; Sin, Johnny Kin On; Lai, Pui To Article
Nb-doped La2O3 as charge-trapping layer for nonvolatile memory applications
IEEE Transactions on Device and Materials Reliability, v. 15, (1), March 2015, article number 6971123, p. 123-126
Shi, Runpu; Huang, Xiaodong; Leung, Cheunghoi; Sin, Johnny Kin On; Lai, Pui To Article
Transient Turn-ON Characteristics of the Fin p-Body IGBT
IEEE Transactions on Electron Devices, v. 62, (8), August 2015, article number 7145407, p. 2555-2561
Feng, Hao; Yang, Wentao; Onozawa, Yuichi; Yoshimura, Takashi; Tamenori, Akira; Sin, Johnny Kin On Article
A Low Substrate Loss, Monolithically Integrated Power Inductor for Compact LED Drivers
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 53-56
Fang, Xiangming; Mak, Tsz Him; Gao, Yuan; Lau, Kei May; Mok, Philip Kwok Tai; Sin, Johnny Kin On Conference paper
A Novel 3D Transformer for Ultra-Compact Signal Isolation
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 297-300
Wu, Rongxiang; Liao, Niteng; Fang, Xiangming; Sin, Johnny K.O. Conference paper
Effect of high-temperature thermal treatment on AlGaN/GaN HEMT Epi for monolithic integration
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Ren, Jie; Liu, Chao; Lau, Kei May; Sin, Johnny K.O. Conference paper
Monolithically Integrated Passives for Power Management System Miniaturization
iLight Workshop 2015, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 16th January 2015
Sin, Johnny K.O. Conference paper
Reset-sensing quasi-V² single-inductor multiple-output buck converter with reduced cross-regulation
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, March 2015, article number 7104461, p. 935-940
Lee, Albert T.L.; Tan, Siewchong; Hui, S.Y.; Chan, Philip Ching Ho; Sin, Johnny K.O. Conference paper

2014 12

A novel integrated power inductor with vertical laminated core for improved L/R ratios
IEEE Electron Device Letters, v. 35, (12), December 2014, article number 2362749, p. 1287-1289
Fang, Xiangming; Wu, Rongxiang; Peng, Lulu; Sin, Johnny Kin On Article
A Novel SNOS Gate-Controlled, Normally-Off p-i-n Switch
IEEE Electron Device Letters, v. 35, (1), January 2014, article number 6680615, p. 111-113
Zhou, Xianda; Feng, Hao; Sin, Johnny Kin On Article
A Simple Low Cost Monolithic Transformer for High-Voltage Gate Driver Applications
IEEE Electron Device Letters, v. 35, (1), January 2014, article number 6679248, p. 108-110
Peng, Lulu; Wu, Rongxiang; Fang, Xiangming; Toyoda, Yoshiaki; Akahane, Masashi; Yamaji, Masaharu; Sumida, Hitoshi; Sin, Johnny Kin On Article
Adaptive high-bandwidth digitally controlled buck converter with improved line and load transient response
IET Power Electronics, v. 7, (3), 2014, p. 515-526
Lee, Albert Tin Leung; Sin, Johnny Kin On; Chan, Philip Ching Ho Article
Design and characterization of wireless power links for brain-machine interface applications
IEEE Transactions on Power Electronics, v. 29, (10), 2014, article number 6718154, p. 5462-5471
Wu, Rongxiang; Li, Wei; Luo, H.; Sin, Johnny Kin On; Yue, Chik Patrick Article
Optimization of Monolithic 3D TSV Transformers for High-Voltage Digital Isolators
ECS Journal of Solid State Science and Technology, v. 3, (10), 2014, p. Q207-Q211
Peng, Lulu; Wu, Rongxiang; Fang, Xiangming; Toyoda, Yoshiaki; Akahane, Masashi; Yamaji, Masaharu; Sumida, Hitoshi; Sin, Johnny K. Article
Scalability of Quasi-Hysteretic FSM-Based Digitally Controlled Single-Inductor Dual-String Buck LED Driver to Multiple Strings
IEEE Transactions on Power Electronics, v. 29, (1), 2014, article number 6482650, p. 501-513
Lee, Albert Tin Leung; Sin, Johnny Kin On; Chan, Philip Ching Ho Article
An Interleaved Backside Silicon-Embedded Transformer with High Isolation Capability
4th International Workshop on Power Supply-on-Chip, Boston, MA, USA, 6-8 October 2014
Liao, N.; Wu, R.X.; Fang, X.M.; Sin, Johnny Kin On Conference paper
Integrated Magnetics for Eco-friendly LED System-on-a-Chip Applications
The 4th International Power Supply on Chip Workshop (PwrSoC2014), Boston, Massachusetts, USA, 6-8 October 2014
Fang, Xiangming; Sin, Johnny Kin On; Lau, Kei May; Yue, Chik Patrick; Mok, Philip Kwok Tai Conference paper
Integration Scheme Toward LED System-on-a-Chip (SoC)
Solid-State and Organic Lighting, SOLED 2014; Energy Change Institute, Australian National UniversityCanberra, Australia, 2 December 2014 through 5 December 2014
Mak, Tsz Him; Liu, Zhaojun; Chong, Wing Cheung; Gao, Yuan; Fang, Xiangming; Sin, Johnny Kin On; Mok, Philip Kwok Tai; Lau, Kei May Conference paper
Poly-Si/-Si(1-x)Ge(x)/si Sandwiched Conductivity Modulated TFT for High-voltage Drivers in Large Area Electronic Applications
European Solid-State Device Research Conference, v. 13-15 Sept. 1999, 1999, article number 1505597, p. 692-695
Zhu, Chunxiang; Sin, J.K.O. Conference paper
Through Silicon Underfill Dispensing for 3D Die/Interposer Stacking
Proceedings - Electronic Components and Technology Conference, September 2014, article number 6897397, p. 919-924
Le, Fuliang; Lee, Ricky Shi-wei; Lau, Kei May; Yue, Chik Patrick; Sin, Johnny Kin On; Mok, Philip Kwok Tai; Ki, Wing Hung; Choi, Hoi Wai Conference paper

2013 11

A Fully Integrated 3D TSV Transformer for High-Voltage Signal Transfer Applications
ECS Solid State Letters, v. 2, (5), 2013
Peng, Lulu; Wu, Rongxiang; Fang, Xiangming; Toyoda, Yoshiaki; Akahane, Masashi; Yamaji, Masaharu; Sumida, Hitoshi; Sin, Johnny Kin On Article
A Novel Silicon-Embedded Toroidal Power Inductor With Magnetic Core
IEEE Electron Device Letters, v. 34, (2), 2013, article number 6410333, p. 292-294
Fang, Xiangming; Wu, Rongxiang; Peng, Lulu; Sin, Johnny Kin On Article
BaTiO3 as charge-trapping layer for nonvolatile memory applications
Solid-State Electronics, v. 79, January 2013, p. 285-289
Huang, X.D.; Sin, Johnny K.O.; Lai, P.T. Article
Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications
IEEE Transactions on Nanotechnology, v. 12, (2), 2013, article number 6392971, p. 157-162
Huang, X.D.; Sin, Johnny K.O.; Lai, P.T. Article
High-Q Backside Silicon-Embedded Inductor for Power Applications in μH and MHz Range
IEEE Transactions on Electron Devices, v. 60, (1), January 2013, article number 6353195, p. 339-345
Wu, Rongxiang; Sin, Johnny Kin On; Yue, Patrick Chik Article
Hot Carrier Injection Effects in the Ultrashallow Body SONOS Gate Power MOSFET
IEEE Transactions on Electron Devices, v. 60, (6), 2013, article number 6515194, p. 2008-2014
Zhou, Xianda; Feng, Hao; Sin, Johnny Kin On Article
Improved Charge-Trapping Characteristics of BaTiO3 by Zr Doping for Nonvolatile Memory Applications
IEEE Electron Device Letters, v. 34, (4), 2013, article number 6471738, p. 499-501
Huang, Xiaodong; Sin, Johnny K.O.; Lai, Puito Article
Silicon-Embedded Receiving Coil for High-Efficiency Wireless Power Transfer to Implantable Biomedical ICs
IEEE Electron Device Letters, v. 34, (1), 2013, article number 6365746, p. 9-11
Wu, Rongxiang; Raju, Salahuddin; Chan, Man Sun; Sin, Johnny Kin On; Yue, Chik Patrick Article
Integrated Power Devices and TCAD Simulation
Integrated Power Devices and TCAD Simulation / Yue Fu, Zhanming Li, Wai Tung Ng, Johnny K.O. Sin. CRC Press, 2014
Fu, Yue; Li, Zhanming; Ng, Wai Tung; Sin, Johnny Kin On Book
A Novel 3D TSV Transformer Technology for Digital Isolator Gate Driver Applications
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2013, article number 6694399, p. 69-72
Peng, Lulu; Wu, Rongxiang; Fang, Xiangming; Toyoda, Yoshiaki; Akahane, Masashi; Yamaji, Masaharu; Sumida, Hitoshi; Sin, Johnny Kin On Conference paper
Cost-effective and Eco-friendly LED System-on-a-Chip (SoC)
2013 10th China International Forum on Solid State Lighting, ChinaSSL 2013, 2013, article number 7177356, p. 235-238
Lau, Kei May; Choi, Hoiwai; Ki, Wing-Hung; Lee, Ricky Shi Wei; Mok, Philip Kwok Tai; Sin, Johnny Kin On; Yue, Chik Patrick Conference paper

2012 10

Charge-trapping characteristics of Ga2O3 nanocrystals for nonvolatile memory applications
ECS solid state letters, v. 1, (5), 2012, p. Q45-Q47
Huang, Xiaodong; Lai, Puito; Sin, Johnny Kin On Article
High-Efficiency Silicon-Embedded Coreless Coupled Inductors for Power Supply on Chip Applications
IEEE Transactions on Power Electronics, v. 27, November 2012, p. 4781-4787
Wu, Rongxiang; Sin, Johnny K.O. Article
LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications
Applied physics. A, Materials science & processing, v. 108, (1), 2012, Jul, p. 229-234
Huang, X.D.; Lai, P.T.; Sin, Johnny K.O. Article
Nitrided La₂O₃ as charge-trapping layer for nonvolatile memory applications
IEEE Transactions on Device and Materials Reliability, v. 12, (2), 2012, Jun, p. 306-310
Huang, X.D.; Sin, J.K.O.; Lai, P.T. Article
Performance of nonvolatile memory by using band-engineered SrTiO3/HfON stack as charge-trapping layer
Microelectronics and reliability, v. 52, (11), November 2012, p. 2527-2531
Huang, X.D.; Lai, P.T.; Sin, Johnny K.O. Article
UIS analysis and characterization of the SONOS gate power MOSFET
IEEE Transactions on Electron Devices, v. 59, (2), 2012, Feb, p. 408-413
Zhou, X.; Ng, J.C.W.; Sin, J.K.O. Article
A New Embedded Inductor for ZVS DC-DC Converter Applications
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, 2012, p. 53-56
Fang, Xiangming; Wu, Rongxiang; Peng, Lulu; Sin, Johnny Kin On Conference paper
A Planar SONOS Gate Power MOSFET with an Ultra-Shallow Body Region
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2012, 2012, article number 6229031, p. 93-96
Zhou, Xianda; Feng, Hao; Sin, Johnny Kin On Conference paper
Backside Embedded Inductors for PwrSoC Applications
3rd International Workshop on Power Supply on Chip, San Francisco, USA, 16-18, Nov, 2012
Wu, Rongxiang; Fang, Xiangming; Peng, Lulu; Sin, Johnny Kin On Conference paper
Wireless power link design using silicon-embedded inductors for brain-machine interface
2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers, Taiwan, April 23-25, 2012, p. 1-4
Wu, Rongxiang; Raju, Salahuddin; Chan, Man Sun; Sin, Johnny Kin On; Yue, Chik Patrick Conference paper

2011 7

A Novel Silicon-Embedded Coreless Inductor for High-Frequency Power Management Applications
IEEE electron device letters, v. 32, (1), January 2011, p. 60-62
Wu, Rongxiang; Sin, Johnny K.O. Article
A Novel SONOS Gate Power MOSFET With Excellent UIS Capability
IEEE electron device letters, v. 32, (10), October 2011, p. 1415-1417
Zhou, Xianda; Ng, Jacky C.W.; Sin, Johnny K.O. Article
Fluorinated SrTiO₃ as Charge-Trapping Layer for Nonvolatile Memory Applications
IEEE Transactions on Electron Devices, v. 58, (12), December 2011, article number 6062402, p. 4235-4240
Huang, Xiaodong; Sin, Johnny Kin On; Lai, Pui To Article
Novel silicon-embedded coreless transformer for on-chip isolated signal transfer
IEEE Magnetics Letters, v. 2, 2011
Wu, R.; Sin, J.K.O.; Hui, S.Y. Article
UIS Analysis and Characterization of the Inverted L-Shaped Source Trench Power MOSFET
IEEE Transactions on Electron Devices, v. 58, (11), November 2011, article number 6016231, p. 3984-3990
Ng, Jacky C.W.; Sin, Johnny Kin On; Sumida, Hitoshi; Toyoda, Yoshiaki; Ohi, Akihiko; Tanaka, Hiroyuki; Nishimura, Takeyoshi; Ueno, Katsunori Article
A Novel Silicon-Embedded Coreless Transformer for Isolated DC-DC Converter Application
Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs, 2011, p. 352-355
Wu, Rongxiang; Sin, Johnny K.O.; Hui, S. Y. (Ron) Conference paper
Novel silicon-embedded coreless coupled inductors for high efficiency on-chip DC-DC conversion
IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings, 2011, p. 1827-1831
Wu, R.; Sin, J.K.O. Conference paper

2010 4

A new 20 V-rated buried-oxide trench-gate bipolar-mode JFET FOR DC/DC converters
IEEE Transactions on Electron Devices, v. 57, (12), 2010, p. 3531-3535
Tian, B.; Wu, Y.; Huang, H.; Guan, L.; Sin, J.K.O.; Kang, B. Article
A new trench power MOSFET with an inverted L-shaped source region
IEEE Electron Device Letters, v. 31, (11), 2010, p. 1284-1286
Ng, J.C.W.; Sin, J.K.O.; Sumida, H.; Toyoda, Y.; Ohi, A.; Tanaka, H.; Nishimura, T.; Ueno, K. Article
A Novel Low-Voltage Trench Power MOSFET with Improved Avalanche Capability
Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs, 2010, p. 201-204
Ng, Jacky C.W.; Sin, Johnny K.O.; Sumida, Hitoshi; Toyoda, Yoshiaki; Ohi, Akihiko; Tanaka, Hiroyuki; Nishimura, Takeyoshi; Ueno, Katsunori Conference paper
High performance CMOS-compatible super-junction FINFETs for sub-100V applications
Technical digest - International Electron Devices Meeting, 2010, p. 20.7.1-20.7.4
Yoo, A.; Ng, J.C.W.; Sin, J.K.O.; Ng, W.T. Conference paper

2009 4

A Low-Voltage Planar Power MOSFET With a Segmented JFET Region
IEEE transactions on electron devices, v. 56, (8), 2009, AUG, p. 1761-1766
Ng, Jacky C.W.; Sin, Johnny K.O. Article
A New Isolation Technology for Automotive Power-Integrated-Circuit Applications
IEEE transactions on electron devices, v. 56, (9), 2009, SEP, p. 2144-2149
Sun, Jingmeng; Jiang, Frank X.C.; Guan, Lingpeng; Xiong, Zhibin; Yan, Guizhen; Sin, Johnny K.O. Article
A new internal transparent collector IGB
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2009, 2009, article number 5158058, p. 287-290
Hu, Dongqing; Sin, J.K.O.; Wu, Yu; Kang, Baowei; You, Xuelan; Cheng, Xu Conference paper
Modeling of internal transparent collector IGBTs and the extraction of electron lifetime in nano-voids layer
2009 IEEE Energy Conversion Congress and Exposition, ECCE 2009, 2009, p. 3948-3953
Hu, D.Q.; Wu, Y.; Kang, B.W.; Jia, Y.P.; Sin, J.K.O. Conference paper

2008 5

A novel planar power MOSFET with laterally uniform body and ion-implanted JFET region
IEEE electron device letters, v. 29, (4), 2008, APR, p. 375-377
Ng, Jacky C.W.; Sin, Johnny K.O.; Guan, Lingpeng Article
A Novel Sub-20V Power MOSFET with Improved On-Resistance and Threshold Variation
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2008, 2008, article number 4538905, p. 91-94
Ng, Jacky C. W.; Sin, J.K.O.; Guan, Lingpeng Conference paper
Characteristics of Monolithic Coreless Transformers for Power Supply-on-Chip Applications
1st International Workshop on Power Supply-On-Chip, Cork, Ireland, pp. 75, Sept. 2008
Wu, R.X.; Su, Y.P.; Sin, J.K.O.; Hui, S.Y. Conference paper
Evaluation of trench-gate bipolar-mode JFETs used as high-side transistors in low-voltage buck converters
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2008, p. 127-130
Wu, Y.; Tian, B.; Huang, H.; Hu, D.; Sin, J.K.O.; Kang, B. Conference paper
SJ-FINFET: A new low voltage lateral superjunction MOSFET
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2008, p. 111-114
Onishi, Y.; Wang, H.; Xu, H.P.E.; Ng, W.T.; Wu, R.; Sin, J.K.O. Conference paper

2007 3

Transient characterization of the planar DMOS with a Metal/Poly-Si replacement gate
IEEE transactions on electron devices, v. 54, (7), 2007, JUL, p. 1789-1792
Guan, Lingpeng; Sin, Johnny K.O. Article
A power bipolar integrated device with Schottky extension of anode
PESC Record - IEEE Annual Power Electronics Specialists Conference, 2007, p. 997-1000
Wu, Y.; Cheng, X.; Sin, J.K.O.; Kang, B.; Hu, D. Conference paper
Lifetime control of power fast recovery diode with low emitter efficiency anode
PESC Record - IEEE Annual Power Electronics Specialists Conference, 2007, p. 991-994
Hu, D.; Sin, J.K.O.; Kang, B.; Cheng, X.; Wu, Y.; Xie, S. Conference paper

2006 4

A 30 V self-aligned metal/poly-Si replacement gate planar DMOS for DC/DC converters
IEEE electron device letters, v. 27, (11), 2006, NOV, p. 920-922
Guan, Lingpeng; Sin, Johnny K.O. Article
A fully integrated SOI RF MEMS technology for system-on-a-chip applications
IEEE transactions on electron devices, v. 53, (1), 2006, JAN, p. 167-172
Guan, LP; Sin, JKO; Liu, HT; Xiong, ZB Article
A new high-temperature thermal sensor based on large-grain polysilicon on insulator
Sensors and Actuators a-physical, v. 130, (Sp. Iss. SI), 2006, AUG 14, p. 129-134
Wu, Z.H.; Lai, P.T.; Sin, Johnny K.O. Article
Extraction of the inversion and accumulation layer mobilities in n-channel trench DMOSFETs
IEEE transactions on electron devices, v. 53, (8), 2006, AUG, p. 1914-1921
Ng, Jacky C.W.; Sin, Johnny K.O. Article

2005 6

A new HCBT with a partially etched collector
IEEE electron device letters, v. 26, (3), 2005, MAR, p. 200-202
Suligoj, T.; Biljanovic, P.; Sin, JKO; Wang, KL Article
A new polysilicon CMOS self-aligned double-gate TFT technology
IEEE transactions on electron devices, v. 52, (12), 2005, DEC, p. 2629-2633
Xiong, ZB; Liu, HT; Zhu, CX; Sin, JKO Article
A novel SOI lateral-power MOSFET with a self-aligned drift region
IEEE electron device letters, v. 26, (4), 2005, APR, p. 264-266
Guan, LP; Sin, JKO; Xiong, ZB; Liu, HT Article
Geometric effect of nickel source on low-temperature polycrystalline silicon TFTs by metal-induced lateral crystallization
IEEE electron device letters, v. 26, (11), 2005, NOV, p. 814-816
Li, JF; Sun, XW; Qi, GJ; Sin, JKO; Huang, ZH; Zeng, XT Article
Horizontal current bipolar transistor (HCBT) process variations for future RF BiCMOS applications
IEEE transactions on electron devices, v. 52, (7), 2005, JUL, p. 1392-1398
Suligoj, T.; Sin, JKO; Wang, KL Article
A novel drift region self-aligned SOI power MOSFET using a partial exposure technique
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2005, p. 171-174
Guan, L.; Sin, J.K.O.; Xiong, Z.; Liu, H. Conference paper

2004 13

A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs
Solid-state electronics, v. 48, (10-11), 2004, OCT-NOV, p. 2047-2050
Suligoj, T.; Liu, H.; Sin, JKO; Tsui, K.; Chu, RM; Chen, KJ; Biljanovic, P.; Wang, KL Article
A novel self-aligned offset-gated polysilicon TFT using high-kappa, dielectric spacers
IEEE electron device letters, v. 25, (4), 2004, APR, p. 194-195
Xiong, ZB; Liu, HT; Zhu, CX; Sin, JKO Article
A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation
IEEE electron device letters, v. 25, (9), 2004, SEP, p. 631-633
Wu, N.; Zhang, QC; Zhu, CX; Chan, DSH; Du, AY; Balasubramanian, N.; Li, MF; Chin, A.; Sin, JKO; Kwong, DL Article
Characteristics of high-kappa spacer offset-gated polysilicon TFTs
IEEE transactions on electron devices, v. 51, (8), 2004, AUG, p. 1304-1308
Xiong, ZB; Liu, HT; Zhu, CX; Sin, JKO Article
Characterization of the ultrathin vertical channel CMOS technology
IEEE transactions on electron devices, v. 51, (1), 2004, JAN, p. 106-112
Liu, HT; Sin, JKO; Xuan, PQ; Bokor, J. Article
Improving reliability of poly-Si TFTs with channel layer and gate oxide passivated by NH3/N2O plasma
MICROELECTRONICS RELIABILITY, v. 44, (3), 2004, MAR, p. 435-442
Zeng, XB; Sun, XW; Li, JF; Sin, JKO Article
A Fully Integrated CMOS and High Voltage Compatible RF MEMS Technology
Technical Digest - International Electron Devices Meeting, IEDM, San Francisco, USA, Dec. 2004, pp. 35-38
Guan, L.; Sin, J.K.O.; Liu, H.; Xiong, Z. Conference paper
A novel low-cost Horizontal Current Bipolar Transistor (HCBT) with the reduced parasitics
Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2004, p. 36-39
Suligoj, T.; Biljanovic, P.; Sin, J.K.O.; Wang, K.L. Conference paper
A Novel Self-Aligned Lightly Doped-Drain Poly-Si TFT Using a Partial Exposure Technique
Society for Information Display, 2004 International Symposium, Seminar, and Exhibition, Seattle, Washington, USA
Xiong, Z.; Liu, H.; Zhu, C.; Sin, J.K.O. Conference paper
A novel surface passivation process for HfO₂ Ge MOSFETs
Device Research Conference - Conference Digest, DRC, 2004, p. 19-20
Wu, N.; Zhang, Q.; Zhu, C.; Chan, D.S.H.; Li, M.F.; Balasubramanian, N.; Du, A.Y.; Chin, A.; Sin, J.K.O.; Kwong, D.L. Conference paper
A simple CMOS self-aligned double-gate poly-Si TFT technology
Meeting Abstracts, 2004, p. 963
Xiong, Z.; Liu, H.; Zhu, C.; Sin, J.K.O. Conference paper
A Simple CMOS Self-Aligned Double-Gate Poly-Si TFT Technology
Proceedings - Electrochemical Society, 2004, p. 87-91
Xiong, Z.; Liu, H.; Zhu, C.; Sin, J.K.O. Conference paper
Design, fabrication and characterization of a Bi-directional insulated gate bipolar transistor
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 1, 2004, p. 332-335
Zhao, S.; Sin, J.K.O.; Feng, C. Conference paper

2003 18

A general design methodology for the optimal multiple-field-limiting-ring structure using device simulator
IEEE transactions on electron devices, v. 50, (11), 2003, NOV, p. 2273-2279
Cheng, X.; Sin, JKO; Shen, J.; Huai, YJ; Li, RZ; Wu, Y.; Kang, BW Article
A novel ultrathin vertical channel NMOSFET with asymmetric fully overlapped LDD
IEEE Electron Device Letters, v. 24, (2), February 2003, p. 84-86
Liu, Haitao; Xiong, Zhibin; Sin, Johnny Kin On Article
An ultrathin vertical channel MOSFET for sub-100-nm applications
IEEE transactions on electron devices, v. 50, (5), 2003, MAY, p. 1322-1327
Liu, HT; Xiong, ZB; Sin, JKO Article
Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation
MICROELECTRONICS RELIABILITY, v. 43, (1), 2003, JAN, p. 163-166
Or, DCT; Lai, PT; Sin, JKO; Kwok, PCK; Xu, JP Article
Fast reverse recovery body diode in high-voltage VDMOSFET using cell-distributed Schottky contacts
IEEE transactions on electron devices, v. 50, (5), 2003, MAY, p. 1422-1425
Cheng, X.; Sin, JKO; Kang, BW; Feng, CG; Wu, Y.; Liu, XM Article
High-temperature thermal sensor based on ultra-thin silicon film for ultra-low-power applications
Solid-state electronics, v. 47, (9), 2003, SEP, p. 1553-1558
Li, B.; Wu, ZH; Lai, PT; Sin, JKO; Liu, BY; Zheng, XR Article
Implementation and Characterization of the Double-gate MOSFET Using Lateral Solid-phase Epitaxy
IEEE Transactions on Electron Devices, v. 50, (6), 2003, JUN, p. 1552-1555
Liu, HT; Xiong, ZB; Sin, JKO Article
Improved reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation
Solid-state electronics, v. 47, (8), 2003, AUG, p. 1391-1395
Or, DCT; Lai, PT; Sin, JKO; Xu, JP Article
Improving hydrogenation efficiency of polycrystalline silicon thin film transistors by a new approach
Microelectronics journal, v. 34, (11), 2003, NOV, p. 1079-1085
Zeng, XB; Sun, XW; Sin, JKO Article
Optimization of plasma nitridation for reliability enhancement of low-temperature gate dielectric in MOS devices
Solid-state electronics, v. 47, (11), 2003, NOV, p. 2049-2053
Or, DCT; Lai, PT; Sin, JKO Article
A Low-cost Horizontal Current Bipolar Transistor Technology (HCBT) for the BiCMOS Integration with FinFETs
International Semiconductor Device Research Symposium (ISDRS), Washington D.C., pp. 518-519
Suligoj, T.; Liu, H.; Sin, J.K.O.; Tsui, K.; Chen, K.J.; Biljanovic, P.; Wang, K.L. Conference paper
A Novel High-K Dielectric Spacer Polysilicon Thin-Film Transistor
Proceedings of the 10th International Display Workshops, Fukuoka, Japan, pp. 1671-2
Xiong, Z.; Liu, H.; Zhu, C.; Sin, J.K.O. Conference paper
A novel self-aligned ultra-thin elevated channel low temperature CMOS poly-Si TFT
THIN FILM TRANSISTOR TECHNOLOGIES VI, PROCEEDINGS, v. 2002, (23), 2003, p. 42-46
Xiong, ZB; Liu, HT; Zhu, CX; Sin, JKO Conference paper
A step-gate oxide SOI MOSFET for RF power amplifiers in short- and medium-range wireless applications
2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2003, p. 33-36
Liao, XP; Tsui, KKP; Liu, HT; Chen, KJ; Sin, JKO Conference paper
Ge pMOSFET with MOCVD HfO2 Gate Dielectric
International Semiconductor Device Research Symposium (ISDRS), Washington D.C., pp. 252-253
Wu, N.; Zhang, Q.; Zhu, C.; Li, M.F.; Chan, D.S.H.; Chin, A.; Kwong, D.L.; Bera, L.K.; Balasubramanian, N.; Du, A.Y.; Tung, C.H.; Liu, H.; Sin, J.K.O. Conference paper
Germanium pMOSFET with HfON Gate Dielectric
International Semiconductor Device Research Symposium (ISDRS), pp. 256-257
Zhang, Q.; Wu, N.; Zhu, C.; Li, M.F.; Chan, D.S.H.; Chin, A.; Kwong, D.L.; Bera, L.K.; Balasubramanian, N.; Du, A.Y.; Tung, C.H.; Liu, H.; Sin, J.K.O. Conference paper
Improving Reliability of Low-Temperature Poly-Si TFTs by Nitrous Oxide Plasma Treatment
Proc. SID, Baltimore, M.D., USA, pp. 212-215
Zeng, X.; Sun, X.W.; Li, J.; Sin, Johnny K.O. Conference paper
Improving the CoolMOS? body-diode switching performance with integrated Schottky contacts
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2003, p. 304-307
Cheng, X.; Liu, X.M.; Sin, J.K.O.; Kang, B.W. Conference paper

2002 16

A high-performance five-channel NMOSFET using selective epitaxial growth and lateral solid phase epitaxy
IEEE electron device letters, v. 23, (5), 2002, MAY, p. 261-263
Kumar, M.; Liu, HT; Sin, JKO Article
A novel 3-D BiCMOS technology using selective epitaxy growth (SEG) and lateral solid phase epitaxial (LSPE)
IEEE electron device letters, v. 23, (3), 2002, MAR, p. 151-153
Liu, HT; Kumar, M.; Sin, JKO Article
A simple, high performance TFSOI complementary BiCMOS technology for low power wireless applications
IEEE transactions on electron devices, v. 49, (1), 2002, JAN, p. 200-202
Kumar, M.; Tan, Y.; Sin, JKO Article
An Experimental Study on High-Temperature Metallization for Micro-Hotplate-Based Integrated Gas Sensors
Sensors and Actuators B: Chemical, v. 86, (1), August 2002, p. 1-11
Yan, Guizhen; Tang, Zhenan; Chan, Phillip C.H.; Sin, Johnny K.O.; Hsing, I-Ming; Wang, Yangyuan Article
An Integrated Gas Sensor Technology Using Surface Micro-Machining
Sensors and Actuators B: Chemical, v. 82, (2-3), February 2002, p. 277-283
Chan, Phillip C.H.; Yan, Guizhen; Sheng, Lieyi; Sharma, Rajnish Kumar; Tang, Zhenan; Sin, Johnny K.O.; Hsing, I-Ming; Wang, Yangyuan Article
Device characteristics of the 3-D BiCMOS technology using selective epitaxial growth and lateral solid phase epitaxy
IEEE transactions on electron devices, v. 49, (12), 2002, DEC, p. 2359-2362
Liu, HT; Kumar, M.; Sin, JKO Article
Excellent Cross-talk Isolation, High-Q inductors, and Reduced Self-heating in a TFSOI Technology for System-on-a-chip Applications
IEEE Transactions on Electron Devices, v. 49, (4), 2002, APR, p. 584-589
Kumar, M.; Tan, Y.; Sin, JKO Article
Implementation and characterization of self-aligned double-gate TFT with thin channel and thick source/drain
IEEE transactions on electron devices, v. 49, (5), 2002, MAY, p. 718-724
Zhang, Shengdong; Han, Ruqi; Sin, Johnny K.O.; Chan, Man Sun Article
Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDD
IEEE transactions on electron devices, v. 49, (8), 2002, AUG, p. 1490-1492
Zhang, Shengdong; Han, Ruqi; Sin, Johnny K.O.; Chan, Man Sun Article
The partial silicon-on-insulator technology for RF power LDMOSFET devices and on-chip microinductors
IEEE Transactions on Electron Devices, v. 49, (12), 2002, p. 2271-2278
Ren, C.; Cai, J.; Liang, Y.C.; Ong, P.H.; Balasubramanian, N.; Sin, J.K.O. Article
A high performance double-gate SOI MOSFET using lateral solid phase epitaxy
IEEE International SOI Conference, 2002, p. 28-29
Liu, H.; Xiong, Z.; Sin, J.K.O.; Xuan, P.; Bokor, J. Conference paper
A Novel Self-Aligned Ultra-Thin Elevated Channel Low Temperature CMOS Poly-Si TFT
The 202nd Meeting of the Electrochemical Society, Salt Lake City, Utah, Abstract No. 636
Xiong, Zhibin; Liu, Haitao; Zhu, C.; Sin, Johnny K.O. Conference paper
Enhanced Reliability for Gate Dielectric of Low-Temperature Polysilicon Thin-Film Transistors by NO-Plasma Nitridation
Proceedings of IEEE Hong Kong Electron Devices Meeting, 35-38
Or, David C.T.; Lai, P.T.; Sin, J.K.O.; Xu, J.P. Conference paper
High-Current Injection in Spreading-Resistance Temperature Sensor on SOI
Proceedings of IEEE Hong Kong Electron Devices Meeting, 69-72
Wu, Z.H.; Lai, P.T.; Li, Bin; Sin, J.K.O. Conference paper
The Investigation of an Integrated Gas Sensor Array
Proceedings of IEEE Sensors, v. 1, (1), 2002, article number 1037113, p. 343-343
Yan, Guizhen; Chan, Phillip C.H.; Miao, Min; Sin, Johnny K.O.; Hsing, I-Ming Conference paper
Ultra-Low-Power Thermal Sensor with Silicon-On-Insulator (SOI) Structure for High-Temperature Applications
Proceedings of IEEE Sensors, v. 1, (2), 2002, p. 1419-1422
Li, B.; Lai, P.T.; Sin, J.K.O.; Liu, B.Y.; Zheng, X.R.; Wu, Z.H. Conference paper

2001 26

A 600-V, 10-A trench bipolar junction diode with superior static and dynamic characteristics
IEEE transactions on electron devices, v. 48, (9), 2001, SEP, p. 2143-2147
You, BD; Huang, AQ; Sin, JKO Article
A novel high performance stacked LDD RF LDMOSFET
IEEE electron device letters, v. 22, (5), 2001, MAY, p. 236-238
Cai, J.; Ren, C.; Balasubramanian, N.; Sin, JKO Article
A novel self-aligned double-gate TFT technology
IEEE electron device letters, v. 22, (11), 2001, NOV, p. 530-532
Zhang, Shengdong; Han, Ruqi; Sin, Johnny K.O.; Chan, Man Sun Article
A novel two-step laser crystallization technique for low-temperature poly-Si TFTs
IEEE transactions on electron devices, v. 48, (5), 2001, MAY, p. 1008-1010
Zeng, XB; Xu, ZY; Sin, JKO; Dai, YB; Wang, CG Article
A SOI LDMOS technology compatible with CMOS, BJT, and passive components for fully-integrated RF power amplifiers
IEEE transactions on electron devices, v. 48, (10), 2001, OCT, p. 2428-2433
Tan, Y.; Kumar, M.; Cai, J.; Sin, JKO Article
An Improved TMAH Si-Etching Solution Without Attacking Exposed Aluminum
Sensors and Actuators A: Physical, v. 89, (1-2), March 2001, p. 135-141
Yan, Guizhen; Chan, Phillip C.H.; Hsing, I-Ming; Sharma, Rajnish Kumar; Sin, Johnny K.O.; Wang, Yangyuan Article
An interpretation of reverse current in metal/intrinsic diamond/semiconducting diamond junction diodes
Applied surface science, v. 171, (1-2), 2001, FEB 1, p. 57-62
Huang, QA; Sun, DY; Sin, JKO Article
An SOI LDMOS/CMOS/BJT technology for integrated power amplifiers used in wireless transceiver applications
IEEE electron device letters, v. 22, (3), 2001, MAR, p. 136-138
Kumar, M.; Tan, Y.; Sin, JKO; Cai, J. Article
Folded gate LDMOS transistor with low on-resistance and high transconductance
IEEE transactions on electron devices, v. 48, (12), 2001, DEC, p. 2917-2928
Zhu, YZ; Liang, YC; Xu, SM; Foo, PD; Sin, JKO Article
Investigation and Control of Microcracks in Tin Oxide Gas Sensing Thin-Films
Sensors and Actuators B: Chemical, v. 79, (1), September 2001, p. 39-47
Tang, Zhenan; Chan, Phillip C.H.; Sharma, Rajnish Kumar; Yan, Guizhen; Hsing, I-Ming; Sin, Johnny K.O. Article
Investigation of Stability and Reliability of Tin Oxide Thin-Film for Integrated Micro-Machined Gas Sensor Devices
Sensors and Actuators B: Chemical, v. 81, (1), December 2001, p. 9-16
Sharma, Rajnish Kumar; Chan, Phillip C.H.; Tang, Zhenan; Yan, Guizhen; Hsing, I-Ming; Sin, Johnny K.O. Article
Novel isolation structures for TFSOI technology
IEEE electron device letters, v. 22, (9), 2001, SEP, p. 435-437
Kumar, M.; Tan, Y.; Sin, JKO Article
Optimization of the specific on-resistance of the COOLMOS (TM)
IEEE transactions on electron devices, v. 48, (2), 2001, FEB, p. 344-348
Chen, XB; Sin, JKO Article
Sensitive, Selective and Stable Tin Dioxide Thin-Films for Carbon Monoxide and Hydrogen Sensing in Integrated Gas Sensor Array Applications
Sensors and Actuators B: Chemical, v. 72, (2), January 2001, p. 160-166
Sharma, Rajnish Kumar; Chan, Phillip C.H.; Tang, Zhenan; Yan, Guizhen; Hsing, I-Ming; Sin, Johnny K.O. Article
Surface plasma passivation of the polycrystalline silicon thin films by using NH3 or N2O gas
Journal of inorganic materials, v. 16, (4), 2001, JUL, p. 693-696
Zeng, XB; Sin, JKO; Xu, ZY; Rao, R. Article
Theoretical analysis and experimental characterization of the dummy-gated VDMOSFET
IEEE transactions on electron devices, v. 48, (9), 2001, SEP, p. 2168-2176
Xu, SM; Ren, CH; Lian, YC; Foo, PD; Sin, JKO Article
多晶硅薄膜的表面处理工艺
無機材料學報, v. 16, (4), July 2001, p. 693-696
曾祥斌; Sin, Johnny K.O.; 徐重陽; 饒瑞 Article
微热板的热测试和热分析
工程熱物理學報, v. 22, (2), March 2001, p. 226-228
顾毓沁; 张荣海; 朱德忠; 孙晓毅; 阎桂珍; 唐祯安; Chan, Philip Ching Ho; Sin, Johnny K.O.; Shing, I-Ming Article
A 3-D BiCMOS technology using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE)
Technical Digest - International Electron Devices Meeting, 2001, p. 729-732
Kumar, M.; Liu, H.; Sin, J.K.O.; Wan, J.; Wang, K.L. Conference paper
A novel five-channel NMOSFET using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE)
IEEE International SOI Conference, 2001, p. 77-78
Liu, H.; Kumar, M.; Sin, J.K.O.; Jun, W.; Wang, K.L. Conference paper
A Partial SOI Technology for Single-Chip RF Power Amplifiers
IEDM Tech. Dig., Washington DC
Cai, J.; Ran, C.; Liang, Y.; Balasubramanian, N.; Sin, J.K.O. Conference paper
A self-aligned double-gate polysilicon TFT technology
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, p. 395-398
Zhang, Shengdong; Han, Ruqi; Sin, Johnny K.O.; Chan, Man Sun Conference paper
An Effective Method to Increase Sensitivity and Stability of the Integrated Gas Sensor with Sensing Film Annealing at Higher Temperature
International Conference on Solid-State and Integrated Circuit Technology Proceedings, ICSICT, v. 2, 2001, article number 982009, p. 773-776
Yan, Guizhen; Chan, Philip C.H.; Sin, Johnny K.O.; Hsing, I-Ming; Wang, Yangyuan Conference paper
An Integrated Gas Sensor Technology Using Surface Micro-Machining
Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS), 2001, p. 543-546
Chan, Phillip C.H.; Yan, Guizhen; Sheng, Lieyi; Sharma, Rajnish Kumar; Tang, Zhenan; Sin, Johnny K.O.; Hsing, I-Ming; Wang, Yangyuan Conference paper
Device Degradation of n-channel Poly-Si TFT's due to High-Field, Hot-Carrier and Radiation Stressing
International Symposium on the Physical and Failure Analysis of ICs, Singapore
Khamesra, A.; Lal, R.; Vasi, J.; Kumar, A.; Sin, J.K.O. Conference paper
Phase-controlled dimmable CFL with PPFC and switching frequency modulation
PESC Record - IEEE Annual Power Electronics Specialists Conference, v. 2, 2001, p. 951-956
Yau, Elson K.F.; Ki, Wing-Hung; Mok, Philip Kwok Tai; Sin, Johnny Kin On Conference paper

2000 27

120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit
IEEE transactions on electron devices, v. 47, (10), 2000, OCT, p. 1980-1985
Xu, SM; Gan, KP; Samudra, GS; Liang, YC; Sin, JKO Article
A 900-MHz fully integrated SOI power amplifier for single-chip wireless transceiver applications
IEEE journal of solid-state circuits, v. 35, (10), 2000, OCT, p. 1481-1486
Tan, Y.; Kumar, M.; Sin, JKO; Shi, LX; Lau, J. Article
A high performance ethanol sensor based on field-effect transistor using a LaFeO3 nano-crystalline thin-film as a gate electrode
Sensors and Actuators b-chemical, v. 64, (1-3), 2000, JUN 10, p. 83-87
Zhao, SQ; Sin, JKO; Xu, BK; Zhao, MY; Peng, ZY; Cai, H. Article
A LDMOS technology compatible with CMOS and passive components for integrated RF power amplifiers
IEEE electron device letters, v. 21, (2), 2000, FEB, p. 82-84
Tan, Y.; Kumar, M.; Sin, JKO; Cai, J.; Lau, J. Article
A new trench base-shielded bipolar transistor
IEEE transactions on electron devices, v. 47, (8), 2000, AUG, p. 1662-1666
Chen, QF; You, BD; Huang, AQ; Sin, JKO Article
A novel high-voltage sustaining structure with buried oppositely doped regions
IEEE transactions on electron devices, v. 47, (6), 2000, JUN, p. 1280-1285
Chen, XB; Wang, X.; Sin, JKO Article
Characteristics of p- and n-channel poly-Si/Si1-xGex/Si Sandwiched Conductivity Modulated Thin-film Transistors
IEEE Transactions on Electron Devices, v. 47, (11), November 2000, p. 2188-2193
Zhu, Chunxiang; Sin, Johnny K O; Kwok, Hoi Sing Article
Compatibility of CO Gas Sensitive SnO₂/Pt Thin Film with Silicon Integrated Circuit Processing
Sensors and Actuators B: Chemical, v. 64, (1-3), June 2000, p. 49-53
Sharma, Rajnish Kumar; Tang, Zhenan; Chan, Philip C.H.; Sin, Johnny K.O.; Hsing, I-Ming Article
Gas chromatographic study on adsorption selectivity of tin dioxide gas sensor to organic vapors
Sensors and Actuators b-chemical, v. 66, (1-3), 2000, JUL 25, p. 156-158
Wang, DK; Ma, LZ; Zhao, GL; Tang, ZN; Chan, PCH; Sin, JKO; Sheng, LY Article
Novel self-protected MOS-gated thyristor
Tien Tzu Hsueh Pao/Acta Electronica Sinica, v. 28, (11), 2000, p. 22-24+35
Gao, Y.M.; Sin, J.K.O.; Xu, S.M. Article
State-of-the-art in Micro-Hotplates
International Journal of Nonlinear Sciences and Numerical Simulation, v. 1, (SUPPL.), 2000, p. 355-360
Tang, Z.; Li, X.; Cheng, G.; Chan, P.C.H.; Sin, J.K.O. Article
Study of the effects of rapid thermal annealing in generation-recombination noise in MBE grown GaN thin films
MICROELECTRONICS RELIABILITY, v. 40, (11), 2000, NOV, p. 1905-1909
Surya, C.; Zhu, CF; Leung, BH; Fong, WK; Cheng, CC; Sin, JKO Article
Three-stage large capacitive load amplifier with damping-factor-control frequency compensation
IEEE journal of solid-state circuits, v. 35, (2), 2000, FEB, p. 221-230
Leung, Ka Nang; Mok, Philip Kwok Tai; Ki, Wing Hung; Sin, Johnny Kin On Article
Ultra-thin elevated channel poly-Si TFT technology for fully-integrated AMLCD system on glass
IEEE transactions on electron devices, v. 47, (3), 2000, MAR, p. 569-575
Zhang, SD; Zhu, CX; Sin, JKO; Li, JN; Mok, PKT Article
多晶硅薄膜的等离子氢化新工艺
微電子學=Microelectronics, v. 30, (6), December 2000, p. 415-417
曾祥斌; 徐重阳; Sin, Johnny K. O.; 王长安; 赵伯芳; 周雪梅; 张洪涛; 饶瑞 Article
自保护MOS栅晶闸管
電子學報=Acta Electronica Sinica, v. 28, (11), November 2000, p. 22-24
高玉民; 单建安; 许曙明 Article
A 900MHz SOI fully-integrated RF power amplifier for wireless transceivers
Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2000, p. 382-383
Kumar, M.; Tan, Y.; Sin, J.; Shi, L.; Lau, J. Conference paper
A SOI LDMOS/CMOS/BJT technology for fully-integrated RF power amplifiers
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2000, p. 137-140
Tan, Y.; Kumar, M.; Sin, J.K.O.; Shi, L.; Lau, J. Conference paper
An Improved TMAH Si-etching Solution without Attacking Exposed Aluminum
Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS), 2000, p. 562-567
Yan, Guizhen; Chan, Philip C.H.; Hsing, I-Ming; Sharma, Rajnish Kumar; Sin, Johnny K.O. Conference paper
Analysis on an alternative structure of damping-factor-control frequency compensation
ISCAS 2000: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - PROCEEDINGS, VOL II: EMERGING TECHNOLOGIES FOR THE 21ST CENTURY, 2000, p. 545-548
Leung, Ka Nang; Mok, Philip Kwok Tai; Ki, Wing Hung; Sin, Johnny Kin On Conference paper
Double-side packaged, high power IGBTs for improved thermal and switching characteristics
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2000, p. 229-232
Zhao, S.; Sin, J.K.O. Conference paper
IC controller for phase-controlled dimmable compact fluorescent lamps with closed-loop control
Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, 2000, p. 503-506
Chan, Wilson W.S.; Mok, Philip Kwok Tai; Ng, Alex T.K.; Ki, Wing-Hung; Sin, Johnny Kin On Conference paper
Investigation of Sintering Characteristics of Composite Multilayer Metallization for MEMS Device Applications
International Symposium on Smart Structures & Microsystems, Hong Kong, 19 - 21 October 2000
Yan, Guizhen; Tang, Zhenan; Chan, Philip C.H.; Sharma, Rajnish Kumar; Sin, Johnny K.O.; Hsing, I-Ming; Wang, Yangyuan Conference paper
Lamp Modeling for Design of Dimmable Electronic Ballasts
IEEE Power Electronics Specialists Conference (PESC), v. 3, 2000, p. 1358-1362
Ng, Tai Kai; Ki, Wing-Hung; Mok, Philip Kowk Tai; Sin, Johnny Kin On Conference paper
Optimization of silicon Spreading-Resistance Temperature sensor
Proceedings of IEEE Hong Kong Electron Devices Meeting, v. 2000, p. 20-23
Li, Bi; Lai, P.T.; Chan, C.L.; Sin, Johnny Kin On Conference paper
Simple, High Performance Complementary TFSOI BiCMOS Technology with Excellent Cross-Talk Isolation and High-Q Inductors for Low Power Wireless Applications
IEEE International SOI Conference, 2000, p. 142-143
Kumar, Mahender; Tan, Yue; Sin, Johnny K.O. Conference paper
Static and dynamic characteristics of 600-V, 10-A trench bipolar junction diodes
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2000, p. 233-236
You, B.; Huang, A.Q.; Sin, J.K.O.; Xu, A. Conference paper

1999 17

A new lateral trench-gate conductivity modulated power transistor
IEEE transactions on electron devices, v. 46, (8), 1999, AUG, p. 1788-1793
Cai, J.; Sin, JKO; Mok, PKT; Ng, WT; Lai, PPT Article
A novel emitter-sharpened double-gate race-track-shaped field emitter structure
IEEE electron device letters, v. 20, (12), 1999, DEC, p. 621-623
Wang, BP; Huang, ZP; Sin, JKO; Poon, VMC; Tang, YM; Wang, C.; Xue, KX; Tong, LS Article
A novel ultrathin elevated channel low-temperature poly-Si TFT
IEEE electron device letters, v. 20, (11), 1999, NOV, p. 569-571
Zhang, SD; Zhu, CX; Sin, JKO; Mok, PKT Article
A P-channel poly-Si/Si1-xGex/Si sandwiched conductivity modulated thin-film transistor
IEEE electron device letters, v. 20, (9), 1999, SEP, p. 470-472
Zhu, CX; Sin, JKO Article
Analysis of high-voltage trench bipolar junction diode (TBJD)
Solid-state electronics, v. 43, (9), 1999, SEP, p. 1777-1783
You, BD; Huang, AQ; Sin, JKO Article
Characteristics of P-channel polysilicon conductivity modulated thin-film transistors
IEEE transactions on electron devices, v. 46, (7), 1999, JUL, p. 1406-1410
Zhu, CX; Sin, JKO; Ng, WT Article
Determination of the excess carrier lifetime in the collector region of silicon power bipolar transistors
IEEE transactions on electron devices, v. 46, (8), 1999, AUG, p. 1782-1787
Wu, Y.; Sin, JKO; Kang, BW; Guo, ZT; Cheng, X. Article
Influence of lateral electric field on the anomalous leakage current in polysilicon TFT's
IEEE electron device letters, v. 20, (1), 1999, JAN, p. 27-29
Kumar, KPA; Sin, JKO Article
Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices
IEEE transactions on electron devices, v. 46, (5), 1999, MAY, p. 1036-1041
Zhang, SD; Sin, JKO; Lai, TML; Ko, PK Article
Spreading-resistance temperature sensor on silicon-on-insulator
IEEE electron device letters, v. 20, (11), 1999, NOV, p. 589-591
Lai, PT; Li, B.; Chan, CL; Sin, JKO Article
A LDMOS Technology Compatible with CMOS, BJT, and Passive Components for Integrated RF Power Amplifiers
European Solid-State Device Research Conference, v. 13-15 Sept. 1999, article number 1505478, p. 216-219
Tan, Yue; Kumar, M?hender P.Sridhar; Sin, K.O.; Cai, Jun; Lau, Jack T.F. Conference paper
A New Approach to the Integration of SnO₂/Pt Thin Film as CO Gas Sensor
10th International Conference on Solid-State Sensors and Actuators, Sendai, Japan, 7 - 10 June 1999
Sharma, Rajnish Kumar; Tang, Zhenan; Chan, Phillip C.H.; Sin, Johnny K.O.; Hsing, I-Ming Conference paper
Damping-factor-control frequency compensation technique for low-voltage low-power large capacitive load applications
1999 IEEE International Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC, San Francisco, CA, USA, 17 Feb 1999, p. 158-159
Leung, Ka Nang; Mok, Philip Kwok Tai; Ki, Wing Hung; Sin, Johnny Kin On Conference paper
Design of monolithic RF power amplifier using bulk BiCMOS process
Midwest Symposium on Circuits and Systems, v. 1, 1999, p. 10-13
Chan, W.C.; Mok, Philip K.T.; Sin, Johnny K.O.; Ng, W.T. Conference paper
Experimental characterization of p-channel polysilicon conductivity modulated thin-film transistors
ASID'99: Proceedings of the 5th Asian Symposium on Information Display, 1999, p. 287-292
Zhu, Chunxiang; Sin, Johnny K O; Kwok, Hoi Sing Conference paper
Phase-controlled dimmable electronic ballast for fluorescent lamps
IEEE Power Electronics Specialists Conference (PESC), v. 2, 1999, p. 1121-1125
Ki, Wing-Hung; Shi, Jiying; Yau, Elson; Mok, Philip Kwok Tai; Sin, Johnny Kin On Conference paper
Ultra-thin Elevated Channel Low Temperature Poly-si tfts for Fully-integrated AMLCD Systems on Glass
Proceeding of the 29th European Solid-State Device Research Conference, IEEE, 1999, p. 708-711
Zhu, Chunxiang; Zhang, Shengdong; Sin, Johnny; Mok, Philip K.T. Conference paper

1998 10

A low-power CMOS compatible integrated gas sensor using maskless tin oxide sputtering
Sensors and Actuators b-chemical, v. 49, (1-2), 1998, JUN 25, p. 81-87
Sheng, LY; Tang, ZN; Wu, J.; Chan, PCH; Sin, JKO Article
A novel crosstalk isolation structure for bulk CMOS power IC's
IEEE transactions on electron devices, v. 45, (7), 1998, JUL, p. 1580-1586
Chan, WWT; Sin, JKO; Wong, SS Article
A novel self-aligned bidirectional MIM diode with transparent junctions for AM-LCD's
IEEE electron device letters, v. 19, (6), 1998, JUN, p. 192-194
Zhang, SD; Sin, JKO Article
An Integrated Gas Sensor Based on Tin Oxide Thin-film and Improved Micro-hotplate
Sensors and Actuators B-chemical, v. 46, (3), 1998, MAR 15, p. 174-179
Tang, Zhenan; Fung, Samuel; Wong, Darwin T.W.; Chan, Philip Ching Ho; Sin, Johnny K O; Cheung, Peter W. Article
An interpretation of SiO2-induced emission instability in silicon field emitter
Applied surface science, v. 136, (1-2), 1998, OCT, p. 36-40
Huang, QA; Sin, JKO; Poon, MC Article
Kink-free polycrystalline silicon double-gate elevated-channel thin-film transistors
IEEE transactions on electron devices, v. 45, (12), 1998, DEC, p. 2514-2520
Kumar, A.; Sin, JKO; Nguyen, CT; Ko, PK Article
Numerical and experimental characterization of single- and double-gate race-track-shaped field emitter structures
IEEE transactions on electron devices, v. 45, (2), 1998, FEB, p. 554-559
Wang, BP; Sin, JKO; Cai, J.; Poon, VMC; Wang, C.; Tang, YM; Tong, LS Article
Fabrication and characteristics of emitter-sharpened double-gate race-track-shaped field emitter structure
Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, v. 1998, p. 94-94
Wang, Baoping; Huang, Zhongping; Sin, Johnny Kin On; Wang, Chen; Xue, Kunxing Conference paper
New trench base-shielded bipolar transistor
IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD), 1998, p. 169-172
Chen, Qufei; Sin, Johnny K.O.; Chen, Qixiu Conference paper
Process windows of nickel silicide films
Advanced Metallization and Interconnect Systems for ULSI Applications in 1997; San Diego, CA; USA; 30 Sept.-2 Oct. 1997, pp. 705-709. 1998
Poon, Vincent Ming Cheong; Deng, F.; Chan, Man Sun; Qiao, D.J.; Zhang, Weiquan; Lau, S.S.; Wong, Hongmei; Sin, Johnny K.O.; Ho, Chenming Conference paper

1997 22

A field-enhanced generation model for field emission from p-type silicon
IEEE electron device letters, v. 18, (12), 1997, DEC, p. 616-618
Huang, QA; Qin, M.; Zhang, B.; Sin, JKO; Poon, MC Article
An analytical model for electric field distribution of positively beveled abrupt PN junctions
IEEE transactions on electron devices, v. 44, (5), 1997, MAY, p. 869-873
Chen, XB; Sin, JKO; Zhang, M.; Wang, B. Article
Field emission from silicon including continuum energy and surface quantization
Applied surface science, v. 119, (3-4), 1997, OCT, p. 229-236
Huang, QA; Sin, JKO; Poon, MC Article
Field emission from surface states of silicon
Journal of applied physics, v. 81, (11), 1997, JUN 1, p. 7589-7594
Huang, QA; Qin, M.; Zhang, B.; Sin, JKO Article
Numerical modeling of the disk-edge field emitter triode
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 15, (2), 1997, MAR-APR, p. 394-397
Wang, C.; Wang, BP; Zhao, HW; Sin, JKO; Poon, MC Article
Study of a novel T-shaped disk-edge field emitter structure
International journal of electronics, v. 83, (3), 1997, SEP, p. 299-305
Wang, C.; Zhao, HW; Yin, HC; Wang, BP; Sin, JKO; Tong, LS Article
Technique for fabricating self-aligned gates onto silicon field emitter arrays
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 15, (5), 1997, SEP-OCT, p. 1682-1684
Zhu, CC; Guan, H.; Liu, WD; Li, TY; Sin, JKO Article
Theory and experiments on r.f. sputtered tin oxide thin-films for gas sensing applications
Sensors and Actuators b-chemical, v. 43, (1-3), 1997, SEP, p. 161-164
Tang, ZN; Jiang, GP; Chan, PCH; Sin, JKO; Lau, SS Article
A Low-power CMOS Compatible Integrated Gas Sensor Using Maskless Tin Oxide Sputtering
International Conference on Solid-State Sensors and Actuators, Proceedings, v. 2, 1997, p. 939-942
Sheng, Lie Yi; Tang, Zhenan; Wu, Jian; Chan, Philip Ching Ho; Sin, Johnny K O Conference paper
A simple polysilicon TFT technology for display systems on glass
Technical digest - International Electron Devices Meeting, 1997, p. 515-518
Kumar, Anish K P; Sin, Johnny K O Conference paper
Characterization of light emitting porous polycrystalline silicon films
Materials Research Society Symposium - Proceedings, v. 452, 1997, p. 415-420
Poon, M.C.; Han, P.G.; Sin, J.K.O.; Wong, H.; Ko, P.K. Conference paper
Integration of SnO sub(2) thin-film onto micro-hotplate for gas sensor applications
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 145-148
Sheng, Lie-yi; Chan, Philip C.H.; Sin, Johnny K.O. Conference paper
Mechanisms of field emission from diamond films
Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, v. 1997, p. 300-304
Huang, Qing An; Qin, Ming; Zhang, Bing; Sin, Johnny Kin On Conference paper
Nanostructural study of luminescent porous polycrystalline silicon
Pro. in 1997 MRS Spring meeting, San Francisco, 1997
Poon, Vincent M.C.; Han, P.G.; Sin, Johnny K.O.; Wong, H. Conference paper
On The Leakage Current Mechanism In Non-uniform Film Polycrystalline Silicon TFTs
Proceedings of the Asian Symposium on Information Display, 1997, p. 199-202
Kumar, Anish K P; Sin, Johnny K O; Kwok, Hoi Sing Conference paper
Porous Silicon Organic Vapor and Humidity Sensor
Materials Research Society Symposia Proceedings, v. 459, 1997, p. 183-188
Poon, M.C.; Sin, Johnny K O; Wong, Hei; Han, P.G.; Kwok, W.H.; Bow, Y.C. Conference paper
Reverse channel floating base emitter switched thyristor (RFB-EST)
Technical Digest - International Electron Devices Meeting, IEDM, v. 1997, p. 355-358
Xu, Shuming; Constapel, Rainer; Silber, Dieter; Sin, Johnny Kin On Conference paper
Simple method to design resonant circuits of electronic ballast for fluorescent lamps
Proceedings - IEEE International Symposium on Circuits and Systems, v. 3, 1997, p. 1744-1747
Li, Zhi; Mok, Philip Kwok Tai; Ki, Wing-Hung; Sin, Johnny Kin On Conference paper
Simulated gate current characteristics of the race-track-shaped field emitter structures
Proceedings of the Asian Symposium on Information Display, 1997, p. 141-144
Wang, Baoping; Sin, Johnny K.O.; Poon, M.C.; Wang, Chen; Tang, Yongming Conference paper
Thermal modeling of micro-hotplates for integrated sensor applications
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 149-152
Wong, Darwin T.W.; Chan, Philip C.H.; Sheng, Lie-yi; Sin, Johnny K.O. Conference paper
Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 65-68
Poon, Vincent Ming Cheong; Deng, Fei; Wong, Hei; Wong, Man; Sin, Johnny K O; Lau, Silvanus S.; Ho, C. H.; Han, P. G. Conference paper
Thermal stability of nickel silicide films in submicron p-type polysilicon lines
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 54-58
Poon, Vincent Ming Cheong; Deng, F.; Wong, Hongmei; Chan, Man Sun; Sin, Johnny K O; Lau, S.S.; Ho, Chenmei; Han, P.G. Conference paper

1996 18

A power IC technology with excellent cross-talk isolation
IEEE electron device letters, v. 17, (10), 1996, OCT, p. 467-469
Chan, WWT; Sin, JKO; Mok, PKT; Wong, SS Article
Electrostatic analysis of field emission triode with volcano-type gate
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 14, (3), 1996, MAY-JUN, p. 1938-1941
Wang, BP; Tong, LS; Sin, JKO; Poon, VMC Article
Optimizing polysilicon thin-film transistor performance with chemical-mechanical polishing and hydrogenation
IEEE electron device letters, v. 17, (11), 1996, NOV, p. 518-520
Chan, ABY; Nguyen, CT; Ko, PK; Wong, M.; Kumar, A.; Sin, J.; Wong, SS Article
Study of luminescent porous polycrystalline silicon thin films
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 14, (2), 1996, MAR-APR, p. 824-826
Han, PG; Poon, MC; Ko, PK; Sin, JKO; Wong, H. Article
Thermal analysis and design of a micro-hotplate for integrated gas-sensor applications
Sensors and Actuators a-physical, v. 54, (1-3), 1996, JUN, p. 482-487
Fung, SKH; Tang, ZN; Chan, PCH; Sin, JKO; Cheung, PW Article
大面积金属场致发射波长阵列制造的新方法
电子学报=Acta Electronica Sinica, v. 24, (11), November 1996, p. 48-51
李天英; 朱长纯; 薛耀国; 张声良; 单建安 Article
真空微电子平板显示器工艺研究
电子学报=Acta Electronica Sinica, v. 24, (11), November 1996, p. 119-121
皇甫鲁江; 朱长纯; 淮永进; 铁执玲; 单建安; 郭彩林 Article
A Fast Switching Insulated-Gate P-I-N Diode Controlled Thyristor Structure
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 1997, p. 122-125
Jun, Cai; Sin, Johnny K O; Poon, Vincent Ming Cheong; Ng, Wai Tung; Lai, Peter P.T. Conference paper
Characterization of sputtered tin oxide thin-films for gas sensing applications
6th International Meeting on Chemical Sensors, Gaithersburg, Maryland, USA, 22-25 June 1996
Tang, Zhenan; Jiang, Guoping; Chan, Philip Ching Ho; Sin, Johnny K.O.; Lau, Silvanus S.W. Conference paper
CMOS latchup characterization for LDMOS/LIGBT power integrated circuits
ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, p. 15-18
Chan, WWT; Sin, JKO; Mok, PKT; Wong, SS Conference paper
Drift region doping effects on high voltage conductivity modulated thin film transistors
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1996, p. 37-39
Kumar, Anish K.P.; Sin, Johnny K.O.; Poon, Vincent M.C. Conference paper
High Voltage Characteristics of Polycrystalline Silicon Conductivity Modulated Thin Film Transistors
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 1997, p. 78-81
Kumar, Anish K.P.; Sin, Johnny K O; Poon, M.C. Conference paper
Nanostructural Study of Luminescent Porous Polycrystalline Silicon
Materials Research Society Symposium Proceedings, v. 431, Jan 1996, p. 265-270
Poon, Vincent Ming Cheong; Han, P.G.; Sin, Johnny K.O.; Wong, Hei Conference paper
Novel single- and double-gate race-track-shaped field emitter structures
Technical Digest - International Electron Devices Meeting, 1996, p. 313-316
Wang, Baoping; Sin, Johnny K.O.; Cai, Jun; Poon, M.C.; Tang, Yongming; Wang, Chen; Tong, Linsu Conference paper
On the capacitance of vacuum microelectronic devices with different field emitter shapes
IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, 1996, p. 509-513
Wang, BP; Tang, YM; Sin, JKO; Poon, VMC Conference paper
Sensing Mechanism of Polymer for Selectivity Enhancement of Gas Sensors
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 1996, p. 217-220
Wong, Kenneth K.L.; Tang, Zhenan; Sin, Johnny K O; Chan, Philip Ching Ho; Cheung, Peter W.; Hiraoka, Hiroyuki Conference paper
SIMNI SOI Formed by High Intensity Nitrogen Implantation
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1996, p. 25-28
Poon, Vincent Ming Cheong; Wong, Sai Peng; Lam, Yat Wah; Chu, P.K.; Sin, Johnny Kin On Conference paper
Structural properties and electron states of amorphous diamond-like carbon
SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, p. 257-260
Jun, C.; Sin, JKO; Wang, KL Conference paper

1995 17

A CONDUCTIVITY MODULATED POLYSILICON THIN-FILM-TRANSISTOR
IEEE electron device letters, v. 16, (11), 1995, NOV, p. 521-523
KUMAR, A.; SIN, JKO; WONG, M.; POON, VMC Article
Micro-Hotplate for Integrated Thin-Film Gas Sensors
Journal of the Chinese Institute of Electrical Engineering, v. 2, (1), 1995, p. 75-79
Fung, Samuel; Tang, Zhenan; Chan, Philip Ching Ho; Sin, Johnny K.O.; Cheung, Peter W. Article
A Finite Width Impurity Source Model for Linear Doping Profiles
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 432-435
Lai, Tommy M L; Sin, Johnny K O; Ko, Ping Keung Conference paper
An automated precision gas sensor characterization system
1995 IEEE TENCON - ASIA-PACIFIC MICROELECTRONICS 2000, PROCEEDINGS, 1995, p. 187-190
Tang, ZN; Wong, DTW; Chan, PCH; Sin, JKO; Fung, SKH; Cheung, PW Conference paper
An Effective Cross-Talk Isolation Structure for Power IC Applications
Technical Digest - International Electron Devices Meeting, 1995, p. 971-974
Chan, Wilson W T; Sin, Johnny K O; Wong, Simon Conference paper
Cross-Talk Prevention for Power Integrated Circuits
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 428-431
Chan, Wilson W T; Wong, Felix C Y; Sin, Johnny K O; Wong, Simon Conference paper
Fast Numerical Method for Semiconductor Device Simulation
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 218-221
Wong, Tinyan; Poon, Vincent Ming Cheong; Sin, Johnny K O; Wong, Man; Lo, Taichin; Wong, Hei Conference paper
Implementation of linear doping profiles for high voltage thin-film SOI devices
IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD), 1995, p. 315-320
Lai, Tommy M.L.; Sin, Johnny K.O.; Wong, Man; Poon, Vincent M.C.; Ko, Ping K. Conference paper
Latch-Up Characteristics of a Trench-Gate Conductivity Modulated Power Transistor
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 424-427
Jun, Cai; Sin, Johnny K O; Ng, Wai Tung; Lai, Peter P T Conference paper
Luminescent Porous Polycrystalline Silicon Film
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 67-70
Han, P.G.; Poon, Vincent Ming Cheong; Ko, Ping Keung; Sin, Johnny K O; Wong, Man; Wong, Hei Conference paper
New Numerical Method for Semiconductor Device Simulation
International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1995, p. 622-624
Poon, Vincent Ming Cheong; Wong, Tinyan; Sin, Johnny K O; Wong, Man Conference paper
Off-Current Characteristics of Conductivity Modulated TFT
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 52-55
Kumar, Anish K P; Sin, Johnny K O Conference paper
Photoluminescent Porous Polycrystalline Silicon
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1995, p. 2-5
Han, P.G.; Poon, Vincent Ming Cheong; Sin, Johnny K O; Wong, Man Conference paper
Selectivity Enhancement of Tin Dioxide Gas Sensor with Polymer Membrane
IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1995, p. 179-182
Wong, Kenneth K L; Tang, Zhenan; Sin, Johnny K O; Chan, Philip Ching Ho; Cheung, Peter W.; HiHiraoka, Hiroyuki Conference paper
Study on Selectivity Enhancement of Tin Dioxide Gas Sensor Using Non-Conducting Polymer Membrane
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1995, p. 42-45
Wong, Kenneth K.L.; Tang, Zhenan; Sin, Johnny K.O.; Chan, Philip Ching Ho; Cheung, Peter W.; Hiraoka, Hiroyuki Conference paper
Thermal analysis and design of a micro-hotplate for integrated gas sensor applications
IEEE, PISCATAWAY, NJ,, Vol. 1, pp. 818-821. 1995
Fung, Samuel KH; Tang, Zhenan; Chan, Philip CH; Sin, Johnny KO; Cheung, Peter W. Conference paper
Thermal Analysis and Design of a Micro-Hotplate for Integrated Gas Sensor Applications
International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Proceedings, v. 1, 1995, p. 818-821
Fung, Samuel; Tang, Zhenan; Chan, Philip Ching Ho; Sin, Johnny K O; Cheung, Peter W. Conference paper

1994 1

Multimedia Textbook Paradigm: A Demonstration in Solid State Device Electronics
1994 IEEE First International Conference on Multi-Media Engineering Education Proceedings, 1994, p99-107.
Nguyen, C.T.; Wong, Man; Sin, J.K.O.; Smith, K.C. Conference paper

1993 1

ANALYSIS AND CHARACTERIZATION OF THE SEGMENTED ANODE LIGBT
IEEE transactions on electron devices, v. 40, (7), 1993, JUL, p. 1300-1306
SIN, JKO; MUKHERJEE, S. Article

1991 2

Lateral Insulated-Gate Bipolar Transistor (LIGBT) with a Segmented Anode Structure
IEEE Electron Device Letters, v. 12, (2), February 1991, p. 45-47
Sin, J.K.O.; Mukherjee, S. Article
Fast LIGBT Switching Due to Plasma Confinement Through Pulse Width Control
3rd International Symposium on Power Semiconductor Devices & ICs, Baltimore, April 1991
Wacyk, I.; Jayaraman, R.; Casey, L.; Sin, J.K.O. Conference paper

1990 2

Nonuniform and Latchup Current Detection in Lateral Conductivity Modulated FET's
IEEE Electron Device Letters, v. 11, (6), June 1990, p. 250-252
Sin, J.K.O.; Mukherjee, S. Article
Lateral Insulated Gate Bipolar Transistor (LIGBT) with a Segmented Anode Structure
Device Research Conference, Santa Barbara, CA, June 1990
Sin, J.K.O.; Mukherjee, S. Conference paper

1989 4

High Voltage Characteristics of Resurfed Schottky Injection FET's
Solid-State Electronics, v. 32, (4), 1989, p. 317-322
Sin, J.K.O.; Salama, C.A.T.; Mukherjee, S.; Rumennik, V. Article
The SINFET--A Schottky Injection MOS-Gated Power Transistor
IEEE Trans. Electron Devices, v. 33, (12), December 1986, p. 1940-1947
Sin, J.K.O.; Salama, C.A.T.; Hou, L.Z. Article
Transient Characteristics of n-channel Hybrid Schottky Injection FET's
IEEE Trans. Electron Devices, v. 36, (5), May 1989, p. 993-1000
Sin, J.K.O.; Salama, C.A.T.; Hou, L.Z. Article
Conductivity Modulation Effect in High Voltage n-channel Schottky Injection FETs
Proceedings of the Symposium on High Voltage and Smart Power ICs, Los Angeles, May 1989, p. 104-113
Sin, J.K.O.; Mukherjee, S. Conference paper

1987 1

P-channel Schottky Injection Field Effect Transistors
Proc. IEDM, 1987, p. 770-773
Ng, W.T.; Salama, C.A.T.; Sin, J.K.O. Conference paper

1986 4

Hybrid Schottky Injection MOS-Gated Power Transistor
Electron. Lett., v. 22, (19), September 1986, p. 1003-1005
Sin, J.K.O.; Salama, C.A.T. Article
Wideband DMOS Amplifier Competes with Bipolars
Microwaves & RF, v .25, (6), June 1986, p. 113-120
Sin, J.K.O.; Salama, C.A.T. Article
A Modified Schottky Injection High Voltage MOS-Gated Transistor
Third Canadian Semiconductor Technology Conference, Ottawa, Canada, Auguest 1986, p. 67
Sin, J.K.O.; Salama, C.A.T. Conference paper
Analysis and Characterization of the Hybrid Schottky Injection Field Effect Transistor
Proc. IEDM, December 1986, p. 222-225
Sin, J.K.O.; Salama, C.A.T.; Hou, L.Z. Conference paper

1985 2

High-Frequency Distortion Analysis of DMOS Transistors
Solid-State Electronics, v. 28, (12), 1985, p. 1223-1233
Sin, J.K.O.; Salama, C.A.T. Article
The SINFET: A New High Conductance, High Switching Speed MOS-Gated Transistor
Electron. Lett., v. 21, (24), November 1985. p. 1134-1136
Sin, J.K.O.; Salama, C.A.T. Article


No Publications






Research Postgraduate (RPG) Supervision From January 2019 to December 2022 (As of 30 January 2022)

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All Supervisions Current RPGs Graduated RPGs

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Current RPGs

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Doctor of Philosophy PENG, Xin
Electronic and Computer Engineering( 2019 - )

HUANG, Linhua
Electronic and Computer Engineering( 2018 - )

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Graduated RPGs

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Doctor of Philosophy LIU, Yong
Electronic and Computer Engineering( Completed in 2021 )

DING, Yixiao
Electronic and Computer Engineering( Completed in 2020 )

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Master of Philosophy XIAO, Chao
Electronic and Computer Engineering( Completed in 2020 )









ProjectsFrom January 2020 to December 2022

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All Projects 3

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No Projects.
Center for Wide-bandgap Semiconductor Power Electronics Research


寬禁帶半導體功率電子研究中心 Participating


Research Impact Fund


Project Team (HKUST)
CHEN Kevin Jing (Lead)
LAU Kei May
SIN Johnny Kin On


2019 -




Development and commercialization of novel digital isolator based on micro-transformer chip technology


基于微型變壓器芯片技術的新型數字信號隔離器的開發與產業化 Participating


Guangzhou Municipal Science and Technology Bureau, Mornsun Guangzhou Science & Technology Co., Ltd


Project Team (HKUST)
SIN Johnny Kin On


2018 - 2020




A Deep Reactive Ion Etching System for Nanosystem Fabrication


用於納米系統製造的反應離子深硅刻蝕設備 Participating


RGC - Collaborative Research Fund


Project Team (HKUST)
POON Andrew Wing On (Lead)
CHAN Ho Bun
CHAN Man Sun
FAN Zhiyong
LAU Kei May
LEE Ricky Shi-wei
LEE Yi-Kuen
LI Zhigang
SIN Johnny Kin On
WEN Weijia
WONG Man
YE Wenjing
YOBAS Levent


2017 - 2020