Kei May LAU
劉紀美
PhD in Electrical Engineering
Rice University, 1981

Chair Professor in Microelectronics Thrust
Function Hub, HKUST (Guangzhou)

Chair Professor
Department of Electronic and Computer Engineering

Senior Fellow
HKUST Jockey Club Institute for Advanced Study

Director of Photonics Technology Center



(852) 2358 7049
eekmlau@ust.hk
Room 2452
Personal Web

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Google Scholar
3n4_9cgAAAAJ

ORCID
0000-0002-7713-1928

Scopus ID
7401559968




Research Interest Publications Projects Teaching Assignment RPG Supervision Space used




Research Interest

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Compound semiconductor materials and devices
III-V on Si integration by epitaxy
Photonics devices
Power semiconductor devices



Publications

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All Years 530 2022 0 2021 18 2020 36 2019 37 2018 30 2017 36 2016 373

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2021 18

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current
IEEE Transactions on Electron Devices, v. 68, (2), February 2021, article number 9303380, p. 653-657
Jiang, Huaxing; Lyu, Qifeng; Zhu, Renqiang; Xiang, Peng; Cheng, Kai; Lau, Kei May Article
848 ppi high-brightness active-matrix micro-LED micro-display using GaN-on-Si epi-wafers towards mass production
Optics Express, v. 29, (7), March 2021, p. 10580-10591
Qi, Longheng; Zhang, Xu; Chong, Wing Cheung; Li, Peian; Lau, Kei May Article
A Monolithic InP/SOI Platform for Integrated Photonics
Light: Science & Applications, v. 10, (1), September 2021, article number 200
Yan, Zhao; Han, Yu; Lin, Liying; Xue, Ying; Ma, Chao; Ng, Wai Kit; Wong, Kam Sing; Lau, Kei May Article
Ambipolar photocarrier doping and transport in monolayer WS2 by forming a graphene/WS2/quantum dots heterostructure
IEEE Electron Device Letters, v. 42, (3), March 2021, article number 9321548, p. 371-374
Cheng, Guanghui; Li, Baikui; Zhao, Chunyu; Jin, Zijing; Lau, Kei May; Wang, Jiannong Article
C and L band room-temperature continuous-wave InP-based microdisk lasers grown on silicon
Optics Letters, v. 46, (12), June 2021, p. 2836-2839
Lin, Liying; Xue, Ying; Li, Jie; Luo, Wei; Huang, Jie; Lau, Kei May Article
Controlled single-mode emission in quantum dot micro-lasers
Optics Express, v. 29, (9), April 2021, p. 13193-13203
Zhu, Si; Ma, Xiang; Liu, Can; Luo, Wei; Liu, Jia; Shi, Bei; Guo, Weihua; Lau, Kei May Article
Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETs
IEEE Electron Device Letters, v. 42, (7), July 2021, article number 9431174, p. 970-973
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May Article
GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates
Optics Express, v. 29, (7), March 2021, p. 11268-11276
Monge-Bartolome, Laura; Shi, Bei; Lai, Billy; Boissier, Guilhem; Cerutti, Laurent; Rodriguez, Jean-Baptiste; Lau, Kei May; Tournie, Eric Article
High-Performance III-V Photodetectors On A Monolithic InP/SOI Platform
Optica, v. 8, (9), 14 September 2021, p. 1204-1209
Xue, Ying; Han, Yu; Tong, Yeyu; Yan, Zhao; Wang, Yi; Zhang, Zunyue; Tsang, Hon Ki; Lau, Kei May Article
Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform
Optics Express, v. 29, (6), March 2021, p. 8358-8364
Lyu, Qifeng; Jiang, Huaxing; Lau, Kei May Article
Monolithic Thin Film Red LED Active-matrix Micro-display by Flip-chip Technology
IEEE Photonics Technology Letters, v. 33, (12), June 2021, article number 9425528, p. 603-606
Li, Peian; Zhang, Xu; Chong, Wing Cheung; Lau, Kei May Article
Optical gain and absorption of 1.55?μm InAs quantum dash lasers on silicon substrate
Applied Physics Letters, v. 118, (13), March 2021, article number 131101
Li, Zhibo; Shutts, Samuel; Xue, Ying; Luo, Wei; Lau, Kei May; Smowton, Peter M. Article
Red-emitting InP quantum dot micro-disk lasers epitaxially grown on (001) silicon
Optics Letters, v. 46, (18), September 2021, p. 4514-4517
Luo, Wei; Lin, Liying; Huang, Jie; Han, Yu; Lau, Kei May Article
Telecom InP-based quantum dash photodetectors grown on Si
Applied Physics Letters, v. 118, (14), April 2021, article number 141101
Xue, Ying; Wang, YI; Luo, Wei; Huang, Jie; Lin, Liying; Tsang, Hon Ki; Lau, Kei May Article
Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors
Semiconductor Science and Technology, v. 36, (3), March 2021, article number 034001
Jiang, Huaxing; Zhu, Renqiang; Lyu, Qifeng; Tang, Chak Wah; Lau, Kei May Article
40 G III-V photodetectors on a monolithic InP/SOI platform
OSA Technical Digest / Optical Society of America. USA : Optical Society of America, 2021, Paper SW2C.2
Xue, Ying; Han, Yu; Tong, Yeyu; Yan, Zhao; Wang, Yi; Tsang, Hon Ki; Lau, Kei May Conference paper
Gain switching of 1.55 μm QDash Lasers directly grown on Silicon
2021 IEEE Photonics Conference (IPC), Vancouver, Canada, 18-21 October 2021
Lin, Qi; Xue, Ying; Luo, Wei; Huang, Jie; Lin, Liying; Lau, Kei May Conference paper
Optical crosstalk reduction in GaN-on-Si micro-LED display
Proceedings of the International Display Workshops, v. 27, 2021, p. 202-204
Qi, Longheng; Zhang, Xu; Li, Peian; Lau, Kei May Conference paper

2020 36

1.55 μm Electrically Pumped Continuous Wave Lasing of Quantum Dash Lasers Grown on Silicon
Optics Express, v. 28, (12), June 2020, p. 18172-18179
Xue, Ying; Luo, Wei; Zhu, Si; Lin, Liying; Shi, Bei; Lau, Kei May Article
1-kV Sputtered p-NiO/n-Ga₂O₃ Heterojunction Diodes with an Ultra-Low Leakage Current below 1 μ A/cm²
IEEE Electron Device Letters, v. 41, (3), March 2020, article number 8962247, p. 449-452
Lu, Xing; Zhou, Xianda; Jiang, Huaxing; Ng, Kar Wei; Chen, Zimin; Pei, Yanli; Lau, Kei May; Wang, Gang Article
Active matrix monolithic micro-LED full-color micro-display
Journal of the Society for Information Display, 24 August 2020
Zhang, Xu; Qi, Longheng; Chong, Wing Cheung; Li, Peian; Tang, Chak Wah; Lau, Kei May Article
Bufferless 1.5 μm III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms
Optica, v. 7, (2), February 2020, article number 1900497, p. 148-153
Han, Yu; Yan, Zhao; Ng, Wai Kit; Xue, Ying; Wong, Kam Sing; Lau, Kei May Article
Bufferless III -V photodetectors directly grown on (001) silicon-on-insulators
Optics Letters, v. 45, (7), April 2020, p. 1754-1757
Xue, Ying; Han, Yu; Wang, Yi; Zhang, Zunyue; Tsang, Hon Ki; Lau, Kei May Article
Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K
IEEE Journal of the Electron Devices Society, v. 8, 3 August 2020, article number 9154408, p. 850-856
Wang, Yangqian; Gu, Yitian; Lu, Xing; Jiang, Huaxing; Guo, Haowen; Chen, Baile; Lau, Kei May; Zou, Xinbo Article
Comparison of growth structures for continuous-wave electrically pumped 1.55 μm quantum dash lasers grown on (001) Si
Photonics Research, v. 8, (12), December 2020, p. 1888-1894
Luo, Wei; Xue, Ying; Huang, Jie; Lin, Liying; Shi, Bei; Lau, Kei May Article
Comparison of static and dynamic characteristics of 1550 nm quantum dash and quantum well lasers
Optics Express, v. 28, (18), 31 August 2020, p. 26823-26835
Shi, Bei; Pinna, Sergio; Luo, Wei; Zhao, Hongwei; Zhu, Si; Brunelli, Simone T. Suran; Lau, Kei May; Klamkin, Jonathan Article
Comparison of the AlN and GaN crystalline quality on 2-inch silicon substrate via two growth methods
Journal of Crystal Growth, v. 535, April 2020, article number 125545
Li, Yangfeng; Tang, Chak Wah; Lau, Kei May Article
Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates
IEEE Transactions on Electron Devices, v. 67, (10), October 2020, article number 9165180, p. 3992-3998
Zhang, Yuliang; Zhang, Xu; Zhu, Min; Chen, Jiaxiang; Tang, Chak Wah; Lau, Kei May; Zou, Xinbo Article
GaN Single Nanowire p-i-n Diode for High-Temperature Operations
ACS Applied Electronic Materials, v. 2, (3), March 2020, p. 719-724
Zou, Xinbo; Zhang, Xu; Zhang, Yu; Lyu, Qifeng; Tang, Chak Wah; Lau, Kei May Article
High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si
Applied Physics Letters, v. 117, (7), 17 August 2020, article number 071101
Lyu, Qifeng; Jiang, Huaxing; Lau, Kei May Article
III-V lasers selectively grown on (001) silicon
Journal of Applied Physics, v. 128, (20), November 2020, article number 200901
Han, Yu; Lau, Kei May Article
III–V micro- and nano-lasers deposited on amorphous SiO₂
Applied Physics Letters, v. 116, (17), April 2020
Han, Yu; Yan, Zhao; Ng, Wai Kit; Xue, Ying; Ng, Kai Wei; Wong, Kam Sing; Lau, Kei May Article
InAs Nano-Ridges and Thin Films Grown on (001) Silicon Substrates
Journal of Applied Physics, v. 128, (3), 16 July 2020, article number 035302
Yan, Zhao; Han, Yu; Lau, Kei May Article
InGaN quantum dots with short exciton lifetimes grown on polar c-plane by metal-organic chemical vapor deposition
Materials Research Express, v. 7, (11), November 2020, article number 115903
Zhao, Chunyu; Tang, Chak Wah; Cheng, Guanghui; Wang, Jiannong; Lau, Kei May Article
Leakage Current Reduction in beta-Ga₂O₃ Schottky Barrier Diodes by CF₄ Plasma Treatment
IEEE Electron Device Letters, v. 41, (9), September 2020, article number 9154753, p. 1312-1315
Luo, Haoxun; Jiang, Huaxing; Chen, Zimin; Pei, Yanli; Feng, Qian; Zhou, Hong; Lu, Xing; Lau, Kei May; Wang, Gang Article
Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si
ACS Photonics, v. 7 , (2), February 2020, p. 528-533
Chen, Baile; Wan, Yating; Xie, Zhiyang; Huang, Jian; Zhang, Ningtao; Shang, Chen; Norman, Justin; Li, Qiang; Yeyu, Tong; Lau, Kei May; Gossard, Arthur C.; Bowers, John E. Article
Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si
IEEE Journal of Selected Topics in Quantum Electronics, v. 26, (2), March 2020
Wan, Yating; Shang, Chen; Norman, Justin; Shi, Bei; Li, Qiang; Collins, Noelle; Dumont, Mario; Lau, Kei May; Gossard, Arthur C.; Bowers, John E. Article
Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the "green gap"
Photonics Research, v. 8, (5), May 2020, p. 750-754
Zhao, Chunyu; Tang, Chak Wah; Lai, Billy; Cheng, Guanghui; Wang, Jiannong; Lau, Kei May Article
Micrometer-scale InP selectively grown on SOI for fully integrated Si-photonics
Applied Physics Letters, v. 117, (5), 4 August 2020, article number 052102
Han, Yu; Yan, Zhao; Xue, Ying; Lau, Kei May Article
MOCVD growth of InP-based 1.3?μm quantum dash lasers on (001) Si
Applied Physics Letters, v. 116, (14), April 2020, article number 142106
Luo, Wei; Xue, Ying; Shi, Bei; Zhu, Si; Dong, Xu; Lau, Kei May Article
Monolithic full-color microdisplay using patterned quantum dot photoresist on dual-wavelength LED epilayers
Journal of the Society for Information Display, 10 September 2020
Li, Peian; Zhang, Xu; Li, Yangfeng; Qi, Longheng; Tang, CHAK WAH; Lau, Kei May Article
Multi-Heterojunction InAs/GaSb Nano-Ridges Directly Grown on (001) Si
Nanotechnology, v. 31, (34), June 2020
Yan, Zhao; Han, Yu; Lau, Kei May Article
Selective lateral photoelectrochemical wet etching of InGaN nanorods
Journal of Vacuum Science and Technology B, v. 38, (6), November 2020, article number 060602
Zhao, Chunyu; Zhang, Xu; Tang, Chak Wah; Wang, Jiannong; Lau, Kei May Article
Selectively grown III-V lasers for integrated Si-photonics
Journal of Lightwave Technology, v. 39, (4), 15 February 2021, article number 9273209, p. 940-948
Han, Yu; Xue, Ying; Yan, Zhao; Lau, Kei May Article
Ultra-Low Threshold Green InGaN Quantum Dot Microdisk Lasers Grown on Silicon
Applied Physics Letters, v. 117, (3), July 2020, article number 0012045
Zhao, Chunyu; Tang, Chak Wah; Wang, Jiannong; Lau, Kei May Article
1.55 μm Quantum Dash CW Lasers on Planar (001) Si
2020 IEEE Photonics Conference, IPC 2020 - Proceedings, September 2020, article number 9252290
Luo, Wei; Xue, Ying; Huang, Jie; Lin, Liying; Shi, Bei; Lau, Kei May Conference paper
1.6 μm continuous-wave lasing from InAs/AlGaInAs quantum dash micro-disk lasers grown on (001) silicon
2020 IEEE Photonics Conference, IPC 2020 - Proceedings, September 2020, article number 9252532
Lin, Liying; Luo, Wei; Zhu, Si; Lau, Kei May Conference paper
Comparison of Dynamic Characteristics of Quantum Dash and Quantum Well Lasers on InP
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, v. 2020-May, May 2020, article number 9193694
Shi, Bei; Pinna, Sergio; Luo, Wei; Zhao, Hongwei; Zhu, Si; Brunelli, Simone Suran; Lau, Kei May; Klamkin, Jonathan S. Conference paper
Electrically pumped CW Lasing of 1.5 μm QDash lasers grown on (001) Si
2020 IEEE Photonics Conference, IPC 2020 - Proceedings, September 2020, article number 9252311
Xue, Ying; Luo, Wei; Zhu, Si; Lin, Liying; Shi, Bei; Lau, Kei May Conference paper
High-resolution monolithic micro-led full-color micro-display
Digest of Technical Papers - SID International Symposium, v. 51, (1), 2020, article number 23-5, p. 339-342, Book 1: Session 23: MicroLED Display Systems
Zhang, Xu; Qi, Longheng; Chong, Wing Cheung; Li, Peian; Lau, Kei May Conference paper
III-V Micro- and Nano-Lasers Grown on Silicon Emitting in the Telecom Band
2020 Optical Fiber Communications Conference and Exhibition, OFC 2020 - Proceedings, March 2020, article number 9083341
Lau, Kei May; Han, Yu; Zhu, Si; Luo, Wei; Xui, Ying Conference paper
InP-based Lasers Grown on 220 nm SOI by Lateral/vertical Aspect Ratio Trapping
2020 IEEE Photonics Conference, IPC 2020 - Proceedings, September 2020, article number 9252256
Han, Yu; Yan, Zhao; Ng, Wai Kit; Xue, Ying; Wong, Kam Sing; Lau, Kei May Conference paper
Quantum Dot Avalanche Photodetector on Si Substrate
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, v. 2020-May, 1 May 2020, article number 9192764
Chen, Baile; Wan, Yating; Xie, Zhiyang; Huang, Jian; Shang, Chen; Norman, Justin; Li, Qiang; Lau, Kei May; Gossard, Arthur C.; Bowers, John E. Conference paper
Self-generated chaos in a free-running Fabry-Perot quantum dot laser
2020 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), August 2020, article number 9255833
Zhou, Yue-Guang; Zhu, Si; Lau, Kei May; Wang, Cheng Conference paper

2019 37

1.55-μm Lasers Epitaxially Grown on Silicon
IEEE Journal of Selected Topics in Quantum Electronics, v. 25, (6), November 2019, article number 1900711
Shi, Bei; Han, Yu; Li, Qiang; Lau, Kei May Article
Active Matrix Monolithic LED Micro-Display Using GaN-on-Si Epilayers
IEEE Photonics Technology Letters, v. 31, (11), June 2019, article number 8688508, p. 865-868
Zhang, Xu; Li, Peian; Zou, Xinbo; Jiang, Junmin; Yuen, Shinghin; Tang, Chakwah; Lau, Kei May Article
Broadband telecom emission from InP/InGaAs nano-ridge lasers on silicon-on-insulator substrate
OSA Continuum, v. 2, (11), November 2019, p. 3037-3043
Ng, Wai Kit; Han, Yu; Lau, Kei May; Wong, Kam Sing Article
Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate
ACS Photonics, v. 6, (5), May 2019, p. 1100-1105
Huang, Jian; Wan, Yating; Jung, Daehwan; Norman, Justin C.; Shang, Chen; Li, Qiang; Lau, Kei May; Gossard, Arthur C.V.; Bowers, John E.; Chen, Baile Article
Electrically pumped 1.5 μm InP-based quantum dot microring lasers directly grown on (001) Si
Optics Letters, v. 44, (18), September 2019, p. 4566-4569
Zhu, Si; Shi, Bei; Lau, Kei May Article
Exciton Aggregation Induced Photoluminescence Enhancement of Monolayer WS₂
Applied Physics Letters, v. 114, (23), June 2019, article number 232101
Cheng, Guanghui; Li, Baikui; Zhao, Chunyu; Jin, Zijing; Li, Hui; Lau, Kei May; Wang, Jiannong Article
High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown
IEEE Electron Device Letters, v. 40, (4), April 2019, article number 8635538, p. 530-533
Jiang, Huaxing; Zhu, Renqiang; Lyu, Qifeng; Lau, Kei May Article
III–V Superlattices on InP/Si Metamorphic Buffer Layers for λ≈4.8 μm Quantum Cascade Lasers
Physica Status Solidi (A) Applications and Materials Science, v. 216, (1), January 2019, article number 1800493
Rajeev, Ayushi; Shi, Bei; Li, Qiang; Kirch, Jeremy Daniel; Cheng, Micah; Tan, Aaron; Kim, Honghyuk; Oresick, Kevin M.; Sigler, Chris; Lau, Kei May; Kuech, Thomas F.; Mawst, Luke James Article
Low-Threshold Epitaxially Grown 1.3-μm InAs Quantum Dot Lasers on Patterned (001) Si
IEEE Journal of Selected Topics in Quantum Electronics, v. 25, (6), November 2019, article number 1502207
Shang, Chen; Wang, Yating; Norman, Justin C.; Collins, Noelle; MacFarlane, Ian; Dumont, Mario; Liu, Songtao; Li, Qiang; Lau, Kei May; Gossard, Arthur C.; Bowers, John E. Article
Room Temperature III–V Nanolasers With Distributed Bragg Reflectors Epitaxially Grown on (001) Silicon-on-insulators
Photonics Research, v. 7, (9), September 2019, p. 1081-1086
Han, Yu; Ng, Wai Kit; Xue, Ying; Wong, Kam Sing; Lau, Kei May Article
Selective Lateral Epitaxy of Dislocation-free InP on Silicon-on-insulator
Applied Physics Letters, v. 114, (19), May 2019, article number 192105
Han, Yu; Xue, Ying; Lau, Kei May Article
Self-Powered Fast-Response X-Ray Detectors Based on Vertical GaN p-n Diodes
IEEE Electron Device Letters, v. 40, (7), July 2019, article number 8705386, p. 1044-1047
Zhou, Leidang; Lu, Xing; Wu, Jin; Jiang, Huaxing; Chen, Liang; Ouyang, Xiaoping; Lau, Kei May Article
Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time
Materials Research Express, v. 7, (1), December 2019, article number 015903
Li, Yangfeng; Jin, Zijing; Han, Yu; Zhao, Chunyu; Huang, Jie; Tang, Chak Wah; Wang, Jiannong; Lau, Kei May Article
Telecom InP/InGaAs Nanolaser Array Directly Grown on (001) Silicon-on-insulator
Optics Letters, v. 44, (4), February 2019, p. 767-770
Han, Yu; Ng, Wai Kit; Xue, Ying; Li, Qiang; Wong, Kam Sing; Lau, Kei May Article
Vertical β-Ga₂O₃ Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance
Physica Status Solidi (A) Applications and Materials Science, 2019, article number 1900497
Lu, Xing; Zhang, Xu; Jiang, Huaxing; Zou, Xinbo; Lau, Kei May; Wang, Gang Article
Growth of III-V semiconductors and lasers on silicon substrates by MOCVD
Future Directions in Silicon Photonics / Edited by Sebastian Lourdudoss, John E. Bowers, Chennupati Jagadish. Cambridge, US : Elsevier/Academic Press, 2019, p. 229-282, Book series: Semiconductors and Semimetals, v. 101
Shi, Bei; Lau, Kei May Book chapter
Active Matrix Monolithic Full-Color LED Micro Display
The 26th International Display Workshops (IDW'19), Sapporo, Japan, 27-29 November 2019
Qi, Longheng; Zhang, Xu; Chong, Wing Cheung; Li, Peian; Tang, Chak Wah; Lau, Kei May Conference paper
Active matrix monolithic full-color LED micro-display
Proceedings of the International Display Workshops, v. 2, 2019, p. 433-435
Qi, Longheng; Zhang, Xu; Chong, Wing Cheung; Li, Peian; Tang, Chak Wah; Lau, Kei May Conference paper
Characteristics of 1.3μm Electrically Pumped InAs/AlGaInAs Quantum Dot Lasers on (001) Silicon
Proceedings of 2019 IEEE Photonics Conference, IPC 2019, September 2019, article number 8908316
Xue, Ying; Wu, Xinru; Luo, Wei; Zhu, Si; Tsang, Hon Ki; Lau, Kei May Conference paper
Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate
2019 Device Research Conference, DRC 2019 / IEEE. Piscataway, NJ : IEEE, 2019, p. 165-166
Huang, Jian; Wan, Yating; Jung, Daehwan; Norman, Justin; Shang, Chen; Li, Qiang; Lau, Kei May; Gossard, Arthur C; Bowers, John E.; Chen, Baile Conference paper
Electrically Injected 1.64 μm-emitting In_0.65Ga_0.35As 3-QW Laser Diodes Grown on Mismatched Substrates by MOVPE
2019 Compound Semiconductor Week (CSW), 2019
Kim, Honghyuk; Shi, Bei; Li, Qiang; Rajeev, Ayushi; Lau, Kei May; Kuech, Thomas F.; Mawst, Luke J. Conference paper
High Responsivity and Low Dark Current Ultraviolet Photodetectors Using p-GaN/AlGaN/GaN Heterostructure
2019 Compound Semiconductor Week, CSW 2019 - Proceedings, May 2019, article number 8819330
Lyu, Qifeng; Jiang, Huaxing; Lu, Xing; Lau, Kei May Conference paper
III-V Lasers and Integrated Components Directly Grown on Silicon: Options for Integration
2019 Device Research Conference, DRC 2019 / IEEE. Piscataway, NJ : IEEE, 2019, p. 69-70
Lau, Kei May Conference paper
III-V lasers emitting at 1.3 to 1.5 μm grown on (001) silicon by MOCVD (invited)
2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings, 2019, article number 8749587
Han, Yu; Zhu, Si; Shi, Bei; Li, Qiang; Lau, Kei May Conference paper
III-V Lasers Emitting at 1.3 to 1.5 \mu \mathrm{m} Grown on (001) Silicon by MOCVD (Invited)
2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings, 8749587, May 2019
Han, Yu; Zhu, Si; Shi, Bei; Li, Qiang; Lau, Kei May Conference paper
Integrated electrically-pumped quantum-dot micro-lasers with tunable single-mode operation
IET Conference Publications, v. 2019, (CP765), 2019
Zhu, Si; Ma, Xiang; Luo, Wei; Shi, Bei; Guo, Weihua; Lau, Kei May Conference paper
Mechanism of wavelength tuning over 200 nm range from InP/InGaAs nano-lasers grown on SOI
2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019, v. Part F140-CLEO_Europe 2019, June 2019, article number 8873205
Ng, Wai Kit; Han, Yu; Lau, Kei May; Wong, Kam Sing Conference paper
Micro-LED displays: Can the monolithic approach produce full-color?
Digest of Technical Papers - SID International Symposium, v. 50, (1), May 2019, p. 20-21, Book 1: Session 4: MicroLED and Color Converting Technology
Lau, Kei May Conference paper
Monolithic Full-color LED Micro-display Using Dual Wavelength LED Epilayers
Proceedings of the International Display Workshops, v. 2, 2019, p. 770-773
Li, Peian; Zhang, Xu; Li, Yangfeng; Qi, Longheng; Tang, Chak Wah; Lau, Kei May Conference paper
Monolithic Growth of InAs Quantum Dots Lasers on (001) Silicon Emitting at 1.55 μm
Proceedings of 2019 IEEE Photonics Conference, IPC 2019, September 2019, article number 8908479
Li, Zhibo; Shutts, Samuel; Allford, Craig P.; Shi, Bei; Luo, Wei; Lau, Kei May; Smowton, Peter M. Conference paper
Monolithic micro-LED full-color micro-displays
Proceedings of the International Display Workshops, v. 1, 2019, p. 6-8
Lau, Kei May; Zhang, Xu Conference paper
Monolithic μ-LED Full-Color Micro-Displays
Proceedings of 2019 IEEE Photonics Conference, IPC 2019, September 2019
Lau, Kei May Conference paper
Multi-heterojunction InAs/GaSb nano-ridges directly grown on (001) Si
International Nano-Optoelectronics Workshop (iNOW), Guangzhou, China, 20 - 26 July 2019
Yan, Zhao; Han, Yu; Lau, Kei May Conference paper
Room-Temperature Electrically Pumped InP-based 1.3μm Quantum Dot Laser on On-axis (001) Silicon
Compound Semiconductor Week (CSW 2019) , Nara, Japan, 19-23 May 2019
Luo, Wei; Xue, Ying; Shi, Bei; Zhu, Si; Lau, Kei May Conference paper
Telecom III-V Nano-Lasers with Distributed Bragg Reflectors Grown on (001) Silicon-on-Insulators
roceedings of 2019 IEEE Photonics Conference, IPC 2019, September 2019, article number 8908501
Han, Yu; Ng, Wai Kit; Xue, Ying; Wong, Kam Sing; Lau, Kei May Conference paper
Triple Reduction of Threshold Current for 1.3μm in as Quantum Dot Lasers on Patterned, On-axis (001) Si
2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings, May 2019, article number 8750447
Shang, Chen; Wan, Yating; Norman, Justin C.; Jung, Daehwan; Li, Qiang; Lau, Kei May; Gossard, Arthur C.V.; Bowers, John E. Conference paper
Vertical Schottky Barrier Diodes Based on a Bulk β-Ga₂O₃ Substrate With High Switching Performance
2019 Compound Semiconductor Week (CSW), 2019
Lu, Xing; Zhang, Xu; Jiang, Huaxing; Zou, Xinbo; Lau, Kei May Conference paper

2018 30

1.5 μm Quantum-dot diode lasers directly grown on CMOS-standard (001) silicon
Applied Physics Letters, v. 113, (22), November 2018, article number 221103
Zhu, Si; Shi, Bei; Li, Qiang; Lau, Kei May Article
A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect Transistor
IEEE Electron Device Letters, v. 39, (3), March 2018, p. 394-396
Ren, Jie; Tang, chak wah; Hao, feng; Jiang, Huaxing; Yang, Wentao; Zhou, xianda; Lau, Kei May; Sin, Johnny Kin On Article
An Auto-Zero-Voltage-Switching Quasi-Resonant LED Driver With GaN FETs and Fully Integrated LED Shunt Protectors
IEEE Journal of Solid-State Circuits, v. 53, (3), March 2018, p. 913-923
Li, Lisong; Gao, Yuan; Jiang, Huaxing; Mok, Philip Kwok Tai; Lau, Kei May Article
Chemical vapor deposited monolayer MoS₂ top-gate MOSFET with atomic-layer deposited ZrO₂ as gate dielectric
Semiconductor Science and Technology, v.33, (4), March 2018, article number 045004
Hu, Yaoqiao; Jiang, Huaxing; Lau, Kei May; Li, Qiang Article
Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition
Applied Physics Letters, v. 113, (23), December 2018, article number 232102
Huang, Tongde; Jiang, Huaxing; Bergsten, Johan; Lau, Kei May; Rorsman, Niklas Article
Enhancement-Mode GaN MOS-HEMTs With Recess-Free Barrier Engineering and High-k ZrO2 Gate Dielectric
IEEE Electron Device Letters, v. 39, (3), March 2018, p. 405-408
Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May Article
Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters
JOURNAL OF APPLIED PHYSICS, v. 123, (19), May 2018, article number 193104
Shi, Bei; Li, Qiang; Lau, Kei May Article
GaAs solar cells on nanopatterned Si substrates
IEEE Journal of Photovoltaics, v. 8, (6), November 2018, article number 8488691, p. 1635-1640
Vaisman, Michelle; Jain, Nikhil; Li, Qiang; Lau, Kei May; Makoutz, Emily; Saenz, Theresa; McMahon, Willian E.; Tamboli, Adele C.; Warren, Emily L. Article
Heterointerface Study of InAs/GaSb Nanoridge Heterostructures Grown by Metal Organic Chemical Vapor Deposition on V-grooved Si (0?0?1) Substrates
Journal of Crystal Growth, v. 484, February 2018, p. 12-16
Lai, Billy; Li, Qiang; Lau, Kei May Article
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO₂ Gate Dielectric
IEEE Transactions on Electron Devices, v. 65, (12), December 2018, p. 5337-5342
Jiang, Huaxing; Liu, Chao; Ng, Kar Wei; Tang, Chak Wah; Lau, Kei May Article
InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands
NANOTECHNOLOGY, v. 29, (22), March 2018, article number 225601
Han, Yu; Li, Qiang; Ng, Kar Wei; Zhu, Si; Lau, Kei May Article
Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors
Semiconductor Science and Technology, v. 33, (4), April 2018, article number 045005
Hu, Yaoqiao; Yip, Pak San; Tang, Chak Wah; Lau, Kei May; Li, Qiang Article
Interfacially bound exciton state in a hybrid structure of monolayer WS₂ and InGaN quantum dots
Nano Letters, v. 18, (9), September 2018, p. 5640-5645
Cheng, Guanghui; Li, Baikui; Zhao, Chunyu; Yan, Xin; Wang, Hong; Lau, Kei May; Wang, Jiannong Article
Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy
Optics Letters, v. 43, (14), July 2018, p. 3401-3404
Liu, Chao; Cai, Yuefei; Jiang, Huaxing; Lau, Kei May Article
Monolithically integrated InGaN/GaN light-emitting diodes, photodetectors, and waveguides on Si substrate
OPTICA, v. 5, (5), May 2018, p. 564-569
Li, K. H.; Fu, W. Y.; Cheung, Y. F.; Wong, K. K. Y.; Wang, Y.; Lau, Kei May; Choi, H. W. Article
Room temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands
Optica, v. 5, (8), August 2018, p. 918-923
Han, Yu; Ng, Wai Kit; Ma, Chao; Li, Qiang; Zhu, Si; Chan, Christopher Chang Sing; Ng, Kar Wei; Lennon, Stephen; Taylor, Robert; Wong, Kam Sing; Lau, Kei May Article
Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si
Optics Express, v. 26, (11), May 2018, p. 14514-14523
Zhu, Si; Shi, Bei; Li, Qiang; Lau, Kei May Article
1.5 mu m Room-temperature Electrically Pumped Quantum Dot Lasers Monolithically Grown on Exact (001) Si
Conference Digest - IEEE International Semiconductor Laser Conference, v. 2018-September, 30 October 2018, article number 8516166, p. 61-62
Shi, Bei; Zhu, Si; Li, Qiang; Lau, Kei May Conference paper
A Power Inductor Integration Technology Using a Silicon Interposer for DC-DC Converter Applications
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 347-350
Ding, Yixiao; Fang, Xiangming; Gao, Yuan; Cai, Yuefei; Qiu, Xing; Mok, Kwok Tai Philip; Lee, Shi-wei; Lau, Kei May; Sin, Johnny Kin On Conference paper
Comparison of MOCVD Grown GaSb on (001) Si substrates using aspect ratio trapping and interfacial misfit growth methods
2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018, Hyatt RegencyAustin, United States, 7-10 May 2018
Lai, Billy; Li, Qiang; Lau, Kei May Conference paper
Design, fabrication, transfer bonding and active matrix driving of GaN-based micro-LEDs displays
Proceedings of the International Display Workshops, v. 3, 2018, p. 1334-1337
Liu, Zhaoiun; Zhang, Ke; Qiu, Chengfeng; Lau, Kei May; Kwok, Hoi Sing; Sun, Xiaowei Conference paper
Experimental Characterization of the Fully Integrated Si-GaN Cascoded FET
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 216-219
Ren, Jie; Tang, Chak Wah; Feng, Hao; Jiang, Huaxing; Yang, Wentao; Lau, Kei May; Sin, Johnny Kin On Conference paper
High Responsivity InP Nano Photo-Detector Monolithic Integrated on (001) Silicon Substrates by Heteroepitaxy
45th International Symposium on Compound Semiconductors (ISCS 2018) and The 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018): Compound Semiconductor Week (CSW 2018), Boston, 29 May - 1June 2018
Han, Yu; Yan, Zhao; Lau, Kei May Conference paper
InAs Quantum Dots Lasers Directly Grown on Silicon Emitting at Telecom Wavelengths
31st Annual Conference of the IEEE Photonics Society, IPC 2018, November 2018, article number 8527161
Lau, Kei May Conference paper
Integration of III-V Compounds on Silicon by Hetero-epitaxy
2018 14th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT), 2018, p. 852-852
Lau, Kei May Conference paper
Normally-off p-GaN Gate HEMT with Hydrogen Implantation Passivation
Compound Semiconductor Week, CSW 2018, 45th International Symposium on Compound Semiconductors/30th International Conference on Indium Phosphide and Related Materials, Cambridge, MA, USA, 29 May - 1 June 2018
Lyu, Qifeng; Jiang, Huaxing; Xiang, Peng; Cheng, Kai; Lau, Kei May Conference paper
Room temperature lasing from InP/InGaAs nano-ridges at telecom-bands
2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings, August 2018, article number 8427517
Han, Yu; Ma, Chao; Ng, Wai Kit; Li, Qiang; Wong, Kam Sing; Lau, Kei May Conference paper
Room Temperature Lasing from InP/InGaAs Nano-ridges at Telecom-bands
Optics InfoBase Conference Papers, v. Part F94-CLEO_SI 2018, 2018
Han, Yu; Ma, Chao; Ng, Wai Kit; Li, Qiang; Wong, Kam Sing; Lau, Kei May Conference paper
Room-Temperature Electrically Pumped InP-based Laser Directly Grown on on-axis (001) Silicon
Optics InfoBase Conference Papers, v. Part F94-CLEO_SI 2018, 2018
Zhu, Si; Shi, Bei; Li, Qiang; Lau, Kei May Conference paper
Room-Temperature Electrically Pumped InP-based Laser Directly Grown on on-axis (001) Silicon
2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings, August 2018, article number 8428086
Zhu, Si; Shi, Bei; Li, Qiang; Lau, Kei May Conference paper

2017 36

1.3 μm Submilliamp Threshold Quantum Dot Micro-lasers on Si
Optica, v. 4, (8), August 2017, p. 940-944
Wan, Yating; Norman, Justin; Li, Qiang; Kennedy, M. J.; Liang, Di; Zhang, Chong; Huang, Duanni; Zhang, Zeyu; Liu, Alan Y.; Torres, Alfredo; Jung, Daehwan; Gossard, Arthur C.; Hu, Evelyn L.; Lau, Kei May; Bowers, John E. Article
1.55 μm Band Low-threshold, Continuous-wave Lasing From InAs/InAlGaAs Quantum Dot Microdisks
Optics Letters, v. 42, (4), February 2017, p. 679-682
Zhu, Si; Shi, Bei; Wan, Yating; Hu, Evelyn L.; Lau, Kei May Article
1.55 μm Room-temperature Lasing from Subwavelength Quantum-dot Microdisks Directly Grown on (001) Si
Applied Physics Letters, v. 110, (12), March 2017, Article Number 121109
Shi, Bei; Zhu, Si; Li, Qiang; Tang, Chak Wah; Wan, Yating; Hu, Evelyn L.; Lau, Kei May Article
A Novel Si–GaN Monolithic Integration Technology for a High-Voltage Cascoded Diode
IEEE Electron Device Letters, v. 38, (4), April 2017, article number 7847414, p. 501-504
Ren, Jie; Liu, Chao; Tang, Chak Wah; Lau, Kei May; Sin, Johnny Kin On Article
Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths
Applied Physics Letters, v. 111, (21), November 2017
Han, Yu; Li, Qiang; Zhu, Si; Ng, Kar Wei; Lau, Kei May Article
Continuous-Wave Optically Pumped 1.55 μm InAs/InAlGaAs Quantum Dot Microdisk Lasers Epitaxially Grown on Silicon
ACS Photonics, v. 4, (2), February 2017, p. 204-210
Shi, Bei; Zhu, Si; Li, Qiang; Wan, Yating; Hu, Evelyn L.; Lau, Kei May Article
Electrically Pumped Continuous Wave Quantum Dot Lasers Epitaxially Grown on Patterned, on-axis (001) Si
Optics Express, v. 25, (4), February 2017, p. 3927-3934
Norman, Justin C.; Kennedy, Matthew J.; Selvidge, Jennifer G.; Li, Qiang; Wan, Yating; Liu, Alan; Callahan, Patrick G.; Echlin, Mc Lean P; Pollock, Tresa M.; Lau, Kei May; Gossard, Arthur C.; Bowers, John E. Article
Epitaxial Growth of GaSb on V-grooved Si (001) Substrates with an Ultrathin GaAs Stress Relaxing Layer
Applied Physics Letters, v. 111, (17), October 2017, article number 172103
Li, Qiang; Lai, Billy; Lau, Kei May Article
Epitaxial Growth of Highly Mismatched III-V Materials on (001) Silicon for Electronics and Optoelectronics
Progress in Crystal Growth and Characterization of Materials, v.63, (4), December 2017, p. 105-120
Li, Qiang; Lau, Kei May Article
Fin-array Tunneling Trigger with Tunable Hysteresis on (001) Silicon Substrate
IEEE Electron Device Letters, v. 38, (5), May 2017, article number 7888930, p. 556-559
Han, Yu; Li, Qiang; Lau, Kei May Article
Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison
IEEE Transactions on Electron Devices, v. 64, (3), March 2017, article number 7835614, p. 809-815
Zhang, Xu; Zou, Xinbo; Lu, Xing; Tang, Chak Wah; Lau, Kei May Article
Fully-integrated Active Matrix Programmable UV and Blue Micro-LED Display System-on-Panel (SoP)
Journal of the Society for Information Display, v. 25, (4), April 2017, p. 240-248
Zhang, Ke; Peng, Deng; Lau, Kei May; Liu, Zhaojun Article
High Performance Monolithically Integrated GaN Driving VMOSFET on LED
IEEE Electron Device Letters, v. 38, (6), June 2017, article number 7893746, p. 752-755
Lu, Xing; Liu, Chao; Jiang, Huaxing; Zou, Xinbo; Lau, Kei May Article
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
IEEE Transactions on Electron Devices, v. 64, (3), March 2017, article number 7805226, p. 832-839
Jiang, Huaxing; Liu, Chao; Chen, Yuying; Lu, Xing; Tang, Chak Wah; Lau, Kei May Article
Low-Flicker Lighting from High-Voltage LEDs Driven by a Single Converter-Free Driver
IEEE Photonics Technology Letters, v. 29, (19), October 2017, article number 9013783, p. 1675-1678
Cai, Yuefei; Zou, Xinbo; Gao, Yuan; Li, Lisong; Mok, Philip K.T.; Lau, Kei May Article
Monolithically Integrated InAs/InGaAs Quantum Dot Photodetectors on Silicon Substrates
Optics Express, v. 25, (22), October 2017, p. 27715-27723
Wan, Yating; Zhang, Zeyu; Chao, Ruilin; Norman, Justin; Jung, Daehwan; Shang, Chen; Li, Qiang; Kennedy, M. J.; Liang, Di; Zhang, Chong; Shi, Jin-Wei; Gossard, Arthur C.; Lau, Kei May; Bowers, John E. Article
O-band Electrically Injected Quantum Dot Micro-ring Lasers on On-axis (001) GaP/Si and V-groove Si
OPTICS EXPRESS, v.25, (22), October 2017, p. 26853-26860
Wan, Yating; Jung, Daehwan; Norman, Justin; Shang, Chen; MacFarlane, Ian; Li, Qiang; Kennedy, M. J.; Gossard, Arthur C.; Lau, Kei May; Bowers, John E. Article
Optical Cross-talk Reduction in a Quantum-dot-based Full-color Micro-light-emitting-diode Display by a Lithographic-fabricated Photoresist Mold
Photonics Research, v. 5, (5), October 2017, p. 411-416
Lin, Huang-Yu; Sher, Chin-Wei; Hsieh, Dan-Hua; Chen, Xin-Yin; Chen, Huang-Ming Philip; Chen, Teng-Ming; Lau, Kei-May; Chen, Chyong-Hua; Lin, Chien-Chung; Kuo, Hao-Chung Article
Parametric Study of High-performance 1.55 mu m InAs Quantum Dot Microdisk Lasers on Si
Optics Express, v.25, (25), December 2017, p. 31281-31293
Zhu, Si; Shi, Bei; Li, Qiang; Wan, Yating; Lau, Kei May Article
Self-organized InAs/InAlGaAs Quantum Dots as Dislocation Filters for InP Films on (001) Si
Journal of Crystal Growth, v. 464, April 2017, p. 28-32
Shi, Bei; Li, Qiang; Lau, Kei May Article
Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric
IEEE Transactions on Electron Devices, v. 64, (3), March 2017, article number 7837657, p. 824-831
Lu, Xing; Yu, Kun; Jiang, Huaxing; Zhang, Anping; Lau, Kei May Article
Switching Performance of Quasi-vertical GaN-based p-i-n Diodes on Si
Physica Status Solidi (A) Applications and Materials Science, V. 214, (8), 15 May 2017, article number 1600817
Zhang, Xu; Zou, Xinbo; Tang, Chak Wah; Lau, Kei May Article
Transistors and tunnel diodes enabled by large-scale MoS2 nanosheets grown on GaN
Semiconductor Science and Technology, v. 32, (7), June 2017, article number 075011
Yip, Pak San; Zou, Xinbo; Cho, Wai Ching; Wu, Kam Lam; Lau, Kei May Article
Tristate Memory Cells Using Double-Peaked Fin-Array III-V Tunnel Diodes Monolithically Grown on (001) Silicon Substrates
IEEE Transactions on Electron Devices, v.64, (10), Oct 2017, article number 8012489, p. 4078-4083
Han, Yu; Li, Qiang; Lau, Kei May Article
Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters
IEEE Electron Device Letters, v. 39, (2), Feb 2018, article number 1, p. 224-227
Cai, Yuefei; Zou, Xinbo; Lau, Kei May Article
Distinguished Student Paper: Fully‐Integrated Active Matrix Programmable UV and Blue Micro‐LED Display System‐on‐Panel (SoP)
Digest of Technical Papers - SID International Symposium, v. 48, (1), June 2017, p. 358-361
Zhang, Ke; Peng, Deng; Lau, Kei May; Liu, Zhaojun Conference paper
Fully-Integrated AMLED Micro Display System With a Hybrid Voltage Regulator
2017 IEEE Asian Solid-State Circuits Conference, A-SSCC 2017 - Proceedings, v. 2017-January, December 2017, p. 277-280
Jiang, Junmin; Sun, Liusheng; Zhang, Xu; Yuen, Shing Hin; Li, Xianbo; Ki, Wing Hung; Yue, Patrick C.; Lau, Kei May Conference paper
GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth
2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2017, p. 578-581
Vaisman, Michelle; Jain, Nikhil; Li, Qiang; Lau, Kei May; Tamboli, Adele C.; Warren, Emily L. Conference paper
InAs Quantum Dot Micro-disk Lasers Grown on (001) Si Emitting at Communication Wavelengths
Proceedings of SPIE - The International Society for Optical Engineering, v. 10123, February 2017, article number 101230J
Lau, Kei May; Shi, Bei; Wan, Yating; Liu, Alan Y.; Li, Qiang; Zhu, Si; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L. Conference paper
InAs/GaAs Quantum Dot Lasers on Exact GaP/Si (001) and Other Templates
CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, 2017
Bowers, John E.; Liu, Alan; Jung, Daehwan; Norman, Justin C.; Gossard, Arthur C.; Wan, Yating; Li, Qiang; Lau, Kei May; Lee, Minjoo Larry Conference paper
InAs/InAlGaAs quantum Dot-on-Silicon microdisk lasers Operating at 1.55 μm
Optics InfoBase Conference Papers, v. Part F41-CLEO_SI 2017, 2017
Shi, Bei; Zhu, Si; Li, Qiang; Wan, Yating; Hu, Evelyn; Lau, Kei May Conference paper
InP/InGaAs nano-ridge array on exact (001) silicon substrate emitting at telecommunication wavelengths
The 44 th International Symposium on Compound Semiconductors (ISCS 2017) and The 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017) :Compound Semiconductor Week (CSW 2017), Berlin, 14-18 May 2017
Han, Yu; Li qiang; Zhu, Si; Lau, Kei May Conference paper
Quantum Dot Lasers Grown on (001) Si Substrate for Integration with Amorphous Si Waveguides
Optical Fiber Communications Conference and Exhibition, v. Part F40-OFC 2017, 2017, article number Th3I.7
Wan, Yating; Li, Qiang; Liu, Alan Y.; Geng, Yu; Norman, Justin; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L.; Lau, Kei May Conference paper
Room Temperature 1.55 pm Lasing of Sub-wavelength Quantum-dot Lasers Epitaxially Grown on (001) Silicon
European Conference on Optical Communication, ECO, v. 2017-September, April 2018, p. 1-3
Zhu, Si; Shi, Bei; Li, Qiang; Wan, Yating; Hu, Evelyn L.; Lau, Kei May Conference paper
Sub-mA Threshold 1.3 μm CW Lasing from Electrically Pumped Micro-rings Grown on (001) Si
Optics InfoBase Conference Papers, v. Part F43-CLEO_AT 2017, 2017
Wan, Yating; Norman, Justin; Li, Qiang; Kennedy, M.J.; Liang, Di; Zhang, Chong; Huang, Duanni; Liu, Alan Y.; Torres, Alfredo; Jung, Daehwan; Gossard, Arthur C.; Hu, Evelyn L.; Lau, Kei May; Bowers, John E. Conference paper
Switching Characteristics of Monolithically Integrated Si-GaN Cascoded Rectifiers
Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2017), 2017, article number 7988928, p. 223-226
Ren, Jie; Liu, Chao; Tang, Chak Wah; Lau, Kei May; Sin, Jonny K.O. Conference paper

2016 42

1.3-μm InAs Quantum-dot Micro-disk Lasers on V-groove Patterned and Unpatterned (001) silicon
Optics Express, v. 24, (18), September 2016, p. 21038-21045
Li, Qiang; Wan, Yating; Liu, Alan; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn; Lau, Kei May Article
Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates
IEEE Electron Device Letters, v. 37, (9), September 2016, article number 7524000, p. 1158-1161
Zou, Xinbo; Zhang, Xu; Lu, Xing; Tang, Chakwah; Lau, Keimay Article
Clivorine, an Otonecine Pyrrolizidine Alkaloid from Ligularia Species, Impairs Neuronal Differentiation via NGF-Induced Signaling Pathway in Cultured PC12 Cells
Phytomedicine, v. 23, (9), August 2016, p. 931-938
Xiong, Aizhen; Yan, Artemis Lu; Bi, Wenchuan; Lam, Yin Ching; Chan, Kar Lun Gallant; Lau, Kei May; Dong, Ting Xia; Lin, Huangquan; Yang, Li; Wang, Zhengtao; Tsim, Karl Wah Keung Article
Coalescence of Planar GaAs Nanowires into Strain-free Three-dimensional Crystals on Exact (001) Silicon
Journal of Crystal Growth, v. 454, November 2016, p. 19-24
Li, Qiang; Jiang, Huaxing; Lau, Kei May Article
Design and Characterization of Active Matrix LED Microdisplays with Embedded Visible Light Communication Transmitter
Journal of Lightwave Technology, v. 34, (14), July 2016, p. 3449-3457
Li, Xianbo; Wu, Liang; Liu, Zhaojun; Hussain, Babar; Chong, Wing Cheung; Lau, Kei May; Yue, Patrick C. Article
Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique
Journal of Crystal Growth, v. 433, January 2016, p. 19-23
Shi, Bei; Lau, Kei May Article
Fabrication and Characterization of High-Voltage LEDs Using Photoresist-Filled-Trench Technique
Journal of Display Technology, v. 12, (4), April 2016, article number 7303888, p. 397-401
Zou, Xinbo; Cai, Yuefei; Chong, Wing Cheung; Lau, Kei May Article
Full-color pixelated-addressable light emitting diode on transparent substrate (LEDoTS) micro-displays by CoB
Journal of Display Technology, v. 12, (7), July 2016, article number 7386564, p. 724-746
Peng, Deng; Zhang, K.Zhang, Ke; Chao, Victor Shin Deh; Mo, Weijing; Lau, Kei May; Liu, Zhaojun Article
Fully Vertical GaN p-i-n DiodesUsing GaN-on-Si Epilayers
IEEE Electron Device Letters, v. 37, (5), May 2016, p. 636-639
Zou, Xinbo; Zhang, Xu; Lu, Xing; Tang, Chak Wah; Lau, Kei May Article
GaAs-InGaAs-GaAs Fin-Array Tunnel Diodes on (001) Si Substrates With Room-Temperature Peak-to-Valley Current Ratio of 5.4
IEEE Electron Device Letters, v. 37, (1), January 2016, article number 7323841, p. 24-27
Li, Qiang; Han, Yu; Lu, Xing; Lau, Kei May Article
Growing InGaAs Quasi-quantum Wires Inside Semi-rhombic Shaped Planar InP Nanowires on Exact (001) Silicon
Applied Physics Letters, v. 108, (24), June 2016, Article number 242105
Han, Yu; Li, Qiang; Chang, Shih-Pang; Hsu, Wen-Da; Lau, Kei May Article
Highly Ordered Horizontal Indium Gallium Arsenide/Indium Phosphide Multi-Quantum-Well in Wire Structure on (001) Silicon Substrates
Journal of Applied Physics, v. 120, (24), December 2016, article number 245701
Han, Yu; Li, Qiang; Lau, Kei May Article
Investigation of Photon-Generated Leakage Current for High-Performance Active Matrix Micro-LED Displays
IEEE Transactions on Electron Devices, v. 63, (12), December 2016, article number 7726032, p. 4832-4838
Zhang, Ke; Peng, Deng; Chong, Wing Cheung; Lau, Kei May; Liu, Zhaojun Article
Low-leakage High-breakdown Laterally Integrated HEMT-LED via n-GaN Electrode
IEEE Photonics Technology Letters, v. 28, (10), May 2016, article number 7416644, p. 1130-1133
Liu, Chao; Cai, Yuefei; Zou, Xinbo; Lau, Kei May Article
Mastering the Marriage of III-Vs and Silicon
Compound Semiconductor, v. 22, (1), 2016, Feb, p. 64-68
Li, Qiang; Lau, Kei May Article
Monolithic Integration of Enhancement-mode Vertical Driving Transistorson a Standard InGaN/GaN Light Emitting Diode Structure
Applied Physics Letters, v. 109, (5), August 2016, article number 053504
Lu, Xing; Liu, Chao; Jiang, Huaxing; Zou, Xinbo; Zhang, Anping; Lau, Kei May Article
Monolithic Integration of Tunnel Diode Based Inverters on Exact (001) Si Substrates
IEEE Electron Device Letters, v. 37, (6), June 2016, article number 7450138, p. 717-720
Han, Yu; Li, Qiang; Lau, Kei May Article
Off-state Drain Leakage Reduction by Post Metallization Annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Si
Physica Status Solidi (A) Applications and Materials Science, v. 213, (4), April 2016, p. 868-872
Jiang, Huaxing; Lu, Xing; Liu, Chao; Li, Qiang; Lau, Kei May Article
Off-state Leakage Current Reduction in AlGaN/GaN High Electron Mobility Transistors by Combining Surface Treatment and Post-gate Annealing
Semiconductor Science and Technology, v. 31, (5), April 2016, Article no. 055019
Lu, Xing; Jiang, Huaxing; Liu, Chao; Zou, Xinbo; Lau, Kei May Article
Optical crosstalk analysis of micro-pixelated GaN-based light-emitting diodes on sapphire and Si substrates
Physica Status Solidi (A) Applications and Materials Science, v. 213, (5), May 2016, p. 1193-1198
Li, K. H.; Cheung, Y. F.; Tang, Ching Wan; Zhao, C.; Lau, Kei May; Choi, Hoi Wai Article
Optically Pumped 1.3μm Room-temperature InAs Quantum-dot Micro-disk Lasers Directly Grown on (001) Silicon
Optics Letters, v. 41, (7), April 2016, p. 1664-1667
Wan, Yating; Li, Qiang; Liu, Alan; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn; Lau, Kei May Article
Optimization of a common buffer platform for monolithic integration of InGaN/GaN light emitting diodes and AlGaN/GaN high electron mobility transistors
Journal of Electronic Materials, v. 45, (4), April 2016, p. 2092-2101
Liu, Chao; Cai, Yuefei; Jiang, Huaxing; Lau, Kei May Article
Optimization of electrode structure for flip-chip HVLED via two-level metallization
Physica Status Solidi (A) Applications and Materials Science, v. 213, (5), May 2016, p. 1199-1203
Cai, Yuefei; Zou, Xinbo; Chong, Wing Cheung; Lau, Kei May Article
Selectable Synthesis of 2-D MoS₂ and Its Electronic Devices: From Isolated Triangular Islands to Large-Area Continuous Thin Film
IEEE Transactions on Nanotechnology, v. 15, (2), March 2016, article number 7398078, p. 310-317
Cho, Wai Ching; Wu, Kam Lam; Yip, Pak San; Wang, Xinsheng; Chai, Yang; Lau, Kei May Article
Sub-wavelength InAs Quantum Dot Micro-disk Lasers Epitaxially Grown on Exact Si (001) Substrates
Applied Physics Letters, v. 108, (22), May 2016, Article number 221101
Wan, Yating; Li, Qiang; Liu, Alan; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn; Lau, Kei May Article
Temperature Characteristics of Epitaxially Grown InAs Quantum Dot Micro-disk Lasers on Silicon for On-chip Light Sources
Applied Physics Letters, v. 109, (1), July 2016, article number 011104
Wan, Yating; Li, Qiang; Liu, Alan; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L.; Lau, Kei May Article
Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate
Applied Physics Express, v. 9, (3), March 2016, Article number 031001
Lu, Xing; Liu, Chao; Jiang, Huaxing; Zou, Xinbo; Zhang, Anping; Lau, Kei May Article
Vertical LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers and Au-Free Bonding
IEEE Transactions on Electron Devices, v. 63, (4), April 2016, article number 7412742, p. 1587-1593
Zou, Xinbo; Zhang, Xu; Chong, Wing Cheung; Tang, Chak Wah; Lau, Kei May Article
1-μm InAs Quantum Dot Micro-disk Lasers Directly Grown on Exact (001) Si
Conference Digest - IEEE International Semiconductor Laser Conference, December 2016, article number 7765705
Lau, Kei May; Wan, Yating; Li, Qiang; Liu, Alan Y.; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L. Conference paper
Efficient Use of Uniform GaN HVLEDs for Small Flicker General Illumination Applications with Coverter-free LED Drivers
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, August 2016, article number 7528729
Cai, Yuefei; Zou, Xinbo; Gao, Yuan; Li, Lisong; Mok, Philip K.T.; Lau, Kei May Conference paper
Fabrication and Improved Performance of AlGaN/GaN HEMTs with Regrown Ohmic Contacts and Passivation-first Process
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, August 2016, article number 7528722
Huang, Tongde; Liu, Chao; Bergsten, Johan; Jiang, Huaxing; Lau, Kei May; Rorsman, Niklas Conference paper
High Voltage Low Current Collapse AlGaN/GaN MISHEMTs with in-situ SiN Gate Dielectric
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, August 2016, article number 7528765
Jiang, Huaxing; Liu, Chao; Lu, Xing; Lau, Kei May Conference paper
Homogeneous and Heterogeneous Integration of GaN-based Light Emitting Diodes and Driving Transistors
7th IEEE International NAnoelectronics Conference (INEC) 2016, Chengdu, China, May 9-11, 2016
Liu, Zhaojun; Lau, Kei May Conference paper
InP Nanowire Arrays with Embedded InGaAs Quantum wells Grown on Patterned (001) Si Substrates
18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVIII), San Diego, 10-15 July 2016
Han, Yu; Li qiang; Chang shih-pang; Hsu wen-da; Lau, Kei May Conference paper
Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs
2016 International Conference on Compound Semiconductor Manufacturing Technology, Miami, Florida, USA, 16-19 May 2016
Yu, Kun; Liu, Chao; Jiang, Huaxing; Lu, Xing; Lau, Kei May; Zhang, Anping Conference paper
Low Leakage High Breakdown GaN MOSHEMTs on Si with a ZrO2 Gate Dielectric
CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, 2017
Jiang, Huaxing; Liu, Chao; Chen, Yuying; Tang,Chak Wah; Lau, Kei May Conference paper
Monolithically integrated GaN-based HEMT-LED and InGaN/GaN photodiodes for on-chip optical interconnects
28th International Conference on Indium Phosphide & Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, Japan, June 26-30, 2016
Liu, Chao; Jiang, Huaxing; Cai, Yuefei; Lau, Kei May Conference paper
Multi-layer InAs/InAlGaAs quantum dots embedded into InP on Si (001) substrate for dislocation filtering
18th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XVIII), San Diego, California, USA, 10-15 July 2016
Shi, Bei; Li, Qiang; Lau, Kei May Conference paper
Room Temperature CW 1.3 μm Single Mode Lasing of InAs Quantum Dot Micro-disk Lasers Grown on (001) Si
2016 Conference on Lasers and Electro-Optics, CLEO 2016, December 2016, article number 7788536
Wan, Yating; Li, Qiang; Liu, Alan; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn; Lau, Kei May Conference paper
Suppression of Current Collapse in AlGaN/GaN MISHEMTs using in-situ SiN Gate Dielectric and PECVD SiN Passivation
CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology, 2016, p. 289-291
Jiang, Huaxing; Liu, Chao; Lu, Xing; Lau, Kei May Conference paper
Switching Performance of Quasi-Vertical GaN-Based p-i-n Diodes on Si
International Workshop on Nitride Semiconductors (IWN 2016), 2-7 October 2016, p. 242-242
Zhang, Xu; Zou, Xinbo; Lau, Kei May; Tang, Chak Wah Conference paper
Voltage-Controlled Light Modulation Enabled by Monolithically Integrated HEMT-LED Device
International Workshop on Nitride Semiconductors (IWN 2016), Orlando, Florida, October 2-7, 2016
Cai, Yuefei; Zou, Xinbo; Liu, Chao; Lau, Kei May Conference paper

2015 29

Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiN_x Gate Dielectric
IEEE Transactions on Electron Devices, v. 62, (6), June 2015, article number 7093156, p. 1862-1869
Lu, Xing; Ma, Jun; Jiang, Huaxing; Liu, Chao; Xu, Peiqiang; Lau, Kei May Article
GaN-based LED micro-displays for wearable applications
Microelectronic Engineering, v. 148, December 2015, p. 98-103
Liu, Zhaojun; Chong, Wing Cheung; Wong, Ka Ming; Lau, Kei May Article
Growing Antiphase-domain-free GaAs Thin Films Out of Highly Ordered Planar Nanowire Arrays on Exact (001) Silicon
Applied Physics Letters, v. 106, (7), February 2015, article number 072105
Li, Qiang; Ng, Kar Wei; Lau, Kei May Article
Hetero-epitaxy of Lg = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications
Chinese Physics B, v. 24, (8), August 2015, article number 087305
Huang, Jie; Li, Ming; Zhao, Qian; Gu, Wenwen; Lau, Kei May Article
High-speed InGaAs photodetectors by selective-area MOCVD toward optoelectronic integrated circuits
IEEE Journal on Selected Topics in Quantum Electronics, v. 20, (6), November 2015, article number 2321278
Geng, Yu; Feng, Shaoqi; Poon, Andrew Wing On; Lau, Kei May Article
Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping
Journal of Crystal Growth, v. 414, March 2015, p. 243-247
Liu, Chao; Liu, Zhaojun; Huang, Tongde; Ma, Jun; Lau, Kei May Article
InAlGaAs/InAlAs MQWs on Si Substrate
IEEE Photonics Technology Letters, v. 27, (7), April 2015, p. 748-751
Shi, Bei; Li, Qiang; Wan, Yating; Ng, Kar Wei; Zou, Xinbo; Tang, Chak Wah; Lau, Kei May Article
InAs/GaAs Quantum Dots on GaAs-on-V-grooved-Si Substrate with High Optical Quality in the 1.3 μm Band
Applied Physics Letters, v. 107, (8), August 2015, article number 081106
Wan, Yating; Li, Qiang; Geng, Yu; Shi, Bei; Lau, Kei May Article
Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors
Applied Physics Letters, v. 106, (18), May 2015, article number 181110
Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May Article
MOVPE growth of in situ SiNx/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio
Journal of Crystal Growth, v. 414, March 2015, p. 237-242
Ma, Jun; Lu, Xing; Zhu, Xueliang; Huang, Tongde; Jiang, Huaxing; Xu, Peiqiang; Lau, Kei May Article
Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD
Chinese Physics B, v. 24, (7), July 2015, article number 078102
Huang, Jie; Li, Ming; Lau, Keimay Article
Reduced Expression of P2Y2 Receptor and Acetylcholinesterase at Neuromuscular Junction of P2Y1 Receptor Knock-out Mice
Journal of Molecular Neuroscience, v. 57, (3), November 2015, p. 446-451
Xu, Miranda Li; Bi, Wenchuan; Cheng, Kwan Wai; Mak, Shinghung; Yao, Ping; Luk, Wilson K.W.; Lau, Kei May; Cheng, Anthony W.M.; Tsim, Karl Wah Keung Article
Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology
Optics Express, v. 23, (25), December 2015, p. 32504-32515
Han, Hauvei; Lin, Huangyu; Lin, Chienchung; Chong, Wing Cheung; Li, Jieru; Chen, Kuoju; Yu, Peichen; Chen, Tengming; Chen, Huangming; Lau, Kei May; Kuo, Haochung Article
The Volatile Oil of Nardostachyos Radix et Rhizoma Induces Endothelial Nitric Oxide Synthase Activity in HUVEC Cells
PLoS ONE, v. 10, (2), February 2015, article number e0116761
Maiwulanjiang, Maitinuer; Bi, Wenchuan; Lee, Pinky Sum-chi; Xin, Guizhong; Miernisha, Abudureyimu; Lau, Kei May; Xiong, Aizhen; Li, Ning; Dong, Ting Xia; Aisa, Haji Akber Kber; Tsim, Karl Wah Keung Article
1.3 μm Photoluminescence from InAs/GaAs Quantum Dots on CMOS-compatible (001) Silicon by Metal-organic Chemical Vapor Deposition
International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Hokkaido, Japan, 27-30 September 2015
Wan, Yating; Li, Qiang; Geng, Yu; Lau, Kei May Conference paper
A Low Substrate Loss, Monolithically Integrated Power Inductor for Compact LED Drivers
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 53-56
Fang, Xiangming; Mak, Tsz Him; Gao, Yuan; Lau, Kei May; Mok, Philip Kwok Tai; Sin, Johnny Kin On Conference paper
An AMLED Microdisplay Driver SoC with Built-In 1.25-Mb/s VLC Transmitter
2015 Symposium on VLSI Circuits (VLSI Circuits 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. C328-C329
Wu, Liang; Li, Xianbo; Chong, Wing Cheung; Liu, Zhaojun; Che, Fengyu; Hussain, Babar; Lau, Kei May; Yue, Chik Patrick Conference paper
Buffer Structure Optimization of Monolithically Integrated HEMT-LED Using a Metal-Interconnection-Free Integration Scheme
57th Electronic Materials Conference (EMC), Columbus, Ohio, USA, 24-26 June 2015
Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May Conference paper
Control of Threshold Voltage in Ultrathin-barrier AlGaN/GaN based MISHEMTs with Low-frequency SiNx Gate Dielectric and Al2O3 Interfacial Layer
The 11th International Conference on Nitride Semiconductors (ICNS 2015), Beijing, China, 30 August - 4 September 2015
Jiang, Huaxing; Liu, Chao; Lu, Xing; Lau, Kei May Conference paper
Effect of high-temperature thermal treatment on AlGaN/GaN HEMT Epi for monolithic integration
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Ren, Jie; Liu, Chao; Lau, Kei May; Sin, Johnny K.O. Conference paper
Effects of Double-cap Technique on the Improvement of InAs/InAlGaAs/InP Quantum Dots Grown by Metal-organic Chemical Vapor Deposition
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials, Sapporo, 2015, 2015, p. 290-291
Shi, Bei; Lau, Kei May Conference paper
Enhanced optical performance of monolithically integrated HEMT-LED by buffer optimization
57th Electronic Materials Conference (EMC), Columbus, Ohio, USA, 24-26 June 2015
Liu, Chao; Cai, Yuefei; Lau, Kei May Conference paper
Fabrication of Large Area Flip-chip High Voltage LEDs with 2 Micron Gap
1th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Cai, Yuefei; Zou, Xinbo; Chong, Wing Cheung; Lau, Kei May Conference paper
GaAs/In0.2Ga0.8As Fin-Array-Esaki Tunnel Diodes Fabricated on (001) Silicon by Aspect Ratio Trapping
2015 International Conference on Solid State Devices and Materials, Sapporo, Japan, 27-30 September 2015
Li, Qiang; Han, Yu; Lau, Kei May Conference paper
High Performance Field Effect Transistors Based on Large Area Mos₂ Thin Films
2015 MRS Spring Meeting & Exhibit, San Francisco, CA, USA, 6-10 April 2015
Cho, Wai Ching; Wang, Xinsheng; Liu, Zhaojun; Chai, Yang; Lau, Kei May Conference paper
Improved Performance of AlGaN/GaN HEMTs by O2-plasma and HCl Surface Treatment
The 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, 30 August - 4 September 2015
Lu, Xing; Jiang, Huaxing; Liu, Chao; Lau, Kei May Conference paper
Off-state Drain Leakage Reduction by Post Metallization Annealing for Al₂O₃/GaN/AlGaN/GaN MOSHEMTs on Silicon
The 42nd International Symposium on Compound Semiconductors, Santa Barbara, Santa Barbara, California, USA, 28 June - 2 July 2015
Jiang, Huaxing; Lu, Xing; Liu, Chao; Lau, Kei May Conference paper
Off-state Leakage Current Reduction in AlGaN/GaN HEMTs by Combining Surface Treatment and PGA
The 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Lu, Xing; Jiang, Huaxing; Liu, Chao; Zou, Xinbo; Lau, Kei May Conference paper
Orderly Array of In-Plane GaAs Nanowires on Exact (001) Silicon for Antiphase-Domain-Free GaAs Thin Films
CS MANTECH 2015 - 2015 International Conference on Compound Semiconductor Manufacturing Technology, 2015, p. 71-74
Li, Qiang; Ng, Kar Wei; Lau, Kei May Conference paper

2014 26

Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition
Applied Physics Letters, v. 104, (3), January 2014, article number 032903
Lu, Xing; Ma, Jun; Jiang, Huaxing; Lau, Kei May Article
Defect Reduction in Epitaxial InP on Nanostructured Si (001) Substrates with Position-controlled Seed Arrays
Journal of Crystal Growth, v. 405, November 2014, p. 81-86
Li, Qiang; Ng, Kar Wei; Tang, Chak Wah; Lau, Kei May; Hill, Richard; Vert, Alexey Article
Enhancement-mode Lg = 50 nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with fmax surpassing 408 GHz
Solid-State Electronics, v. 99, 2014, p. 7-10
Li, Ming; Tang, Chak Wah; Li, Haiou; Lau, Kei May Article
Growth and Characterization of Horizontal GaN Wires on Silicon
Applied Physics Letters, v. 104, (26), June 2014, article number 262101
Zou, Xinbo; Lu, Xing; Lucas, Ryan; Kuech, Thomas F.; Choi, Jonathan W.; Gopalan, Padma; Lau, Kei May Article
Growth of Ultra-high Mobility In0.52Al0.48As/InxGa1-xAs (x >= 53%) Quantum Wells on Si Substrates using InP/GaAs Buffers by Metalorganic Chemical Vapor Deposition
Applied Physics Express, v. 7, (4), 2014, article number 045502
Li, Qiang; Tang, Chak Wah; Lau, Kei May Article
High-efficiency Blue and Green LEDs Grown on Si with 5 Micrometer Thick GaN Buffer
Physica Status Solidi (C): Current Topics in Solid State Physics, v. 11, (3-4), 2014, p. 730-733
Zou, Xinbo; Wong, Ka Ming; Chong, Wing Cheung; Ma, Jun; Lau, Kei May Article
In situ growth of SiNx as gate dielectric and surface passivation for AIN/GaN heterostructures by metalorganic chemical vapor deposition
Applied physics express, v. 7, (9), September 2014, article number 091002
Ma, Jun; Lu, Xing; Jiang, Huaxing; Liu, Chao; Lau, Kei May Article
In situ SiNx gate dielectric by MOCVD for low-leakage-current ultra-thin-barrier AlN/GaN MISHEMTs on Si
Physica Status Solidi (A) Applications and Materials Science, v. 211, (4), April 2014, p. 775-778
Lu, Xing; Ma, Jun; Liu, Zhaojun; Jiang, Huaxing; Huang, Tongde; Lau, Kei May Article
Lg = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD
Chinese Physics B, v. 23, (12), December 2014, article number 128102
Huang, Jie; Li, Ming; Tang, Chak Wah; Lau, Kei May Article
Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition
Applied physics letters, v. 105, (10), September 2014, article number 102911
Lu, Xing; Ma, Jun; Jiang, Huaxing; Liu, Chao; Lau, Kei May Article
Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition
Chinese Physics B, v. 23, (3), 2014, article number 038403
Li, Ming; Wang, Yong; Wong, Kaming; Lau, Kei May Article
Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD
IEEE Electron Device Letters, v. 35, (3), 2014, article number 6730671, p. 330-332
Liu, Zhaojun; Huang, Tongde; Ma, Jun; Liu, Chao; Lau, Kei May Article
Performance Enhancements of Flip-Chip Light-Emitting Diodes With High-Density n-Type Point-Contacts
IEEE Electron Device Letters, v. 35, (10), October 2014, article number 6894119, p. 1049-1051
Chong, Wing Cheung; Lau, Kei May Article
Quantification of the Transcripts Encoding Different Forms of AChE in Various Cell Types: Real-Time PCR Coupled with Standards in Revealing the Copy Number
Journal of Molecular Neuroscience, v. 53, (3), July 2014, p. 461-468
Bi, Wenchuan; Luk, Wilson K.W.; Campanari, Maria-Letizia; Liu, Yuen H.; Xu, Li; Lau, Kei May; Xu, Miranda Li; Choi, Chi Yan; Saez-valero, Javier; Tsim, Karl Wah Keung Article
Selective Epitaxial Growth of Monolithically Integrated GaN-based Light Emitting Diodes with AlGaN/GaN Driving Transistors
Applied Physics Letters, v. 104, (9), March 2014, article number 091103
Liu, Zhaojun; Ma, Jun; Huang, Tongde; Liu, Chao; Lau, Kei May Article
Self-aligned gate-last enhancement- and depletion-mode AlN/GaN MOSHEMTs on Si
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), 2014, p. 890-893
Huang, Tongde; Ma, Jun; Lu, Xing; Liu, Zhaojun; Zhu, Xueliang; Lau, Kei May Article
1700 pixels per inch (PPI) passive-matrix micro-LED display powered by ASIC
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, December 2014, article number 6978524
Chong, Wing Cheung; Cho, Wai Keung; Liu, Zhaojun; Wang, Chu Hong; Lau, Kei May Conference paper
Growth and Characterization of GaN Wires Grown on Nano-Scale Porous SiO₂ Patterned GaN/Si Templates
The 56th Electronic Materials Conference (EMC 2014), The University of California, Santa Barbara, USA, 25-27 June 2014
Zou, Xinbo; Lu, Xing; Lucas, Ryan; Kuech, Thomas F.; Choi, Jonathan W; Gopalan, Padma; Lau, Kei May Conference paper
Growth of Low Defect-density InP on Exact Si (001) Substrates by Metalorganic Chemical Vapor Deposition with Position-controlled Seed Arrays
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2014, article number 6880514
Li, Qiang; Tang, Chak Wah; Lau, Kei May; Hill, Richard; Vert, Alexey Conference paper
High performance self-aligned AlN/GaN MISHEMT with in-situ SiNx gate dielectric and regrown source/drain
CS MANTECH 2014 - 2014 International Conference on Compound Semiconductor Manufacturing Technology, 2014, p. 201-204
Lu, Xing; Ma, Jun; Xu, Peiqiang; Jiang, Huaxing; Lau, Kei May Conference paper
III-V-IV Integration Toward Electronics and Photonics Convergence on a Silicon Platform
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, January 2014, article number 7021190
Lau, Kei May; Li, Qiang Conference paper
Integrated Magnetics for Eco-friendly LED System-on-a-Chip Applications
The 4th International Power Supply on Chip Workshop (PwrSoC2014), Boston, Massachusetts, USA, 6-8 October 2014
Fang, Xiangming; Sin, Johnny Kin On; Lau, Kei May; Yue, Chik Patrick; Mok, Philip Kwok Tai Conference paper
Integration Scheme Toward LED System-on-a-Chip (SoC)
Solid-State and Organic Lighting, SOLED 2014; Energy Change Institute, Australian National UniversityCanberra, Australia, 2 December 2014 through 5 December 2014
Mak, Tsz Him; Liu, Zhaojun; Chong, Wing Cheung; Gao, Yuan; Fang, Xiangming; Sin, Johnny Kin On; Mok, Philip Kwok Tai; Lau, Kei May Conference paper
LED on silicon (LEDoS) microdisplays
Solid-State and Organic Lighting, SOLED 2014, Australia : Optical Society of America (OSA), 2014
Lau, Kei May Conference paper
Monolithic Integration of III-nitride LEDs and Driver HEMT Transistors by MOCVD
Asia Communications and Photonics Conference, ACPC 2014, November 2014
Lau, Kei May Conference paper
Through Silicon Underfill Dispensing for 3D Die/Interposer Stacking
Proceedings - Electronic Components and Technology Conference, September 2014, article number 6897397, p. 919-924
Le, Fuliang; Lee, Ricky Shi-wei; Lau, Kei May; Yue, Chik Patrick; Sin, Johnny Kin On; Mok, Philip Kwok Tai; Ki, Wing Hung; Choi, Hoi Wai Conference paper

2013 19

360 PPI Flip-Chip Mounted Active Matrix Addressable Light Emitting Diode on Silicon (LEDoS) Micro-Displays
IEEE/OSA Journal of Display Technology, v. 9, (8), 2013, article number 6502265, p. 678-682
Liu, Zhaojun; Chong, Wing Cheung; Wong, Ka Ming; Lau, Kei May Article
A GaN-Based Lamb-Wave Oscillator on Silicon for High-Temperature Integrated Sensors
IEEE Microwave and Wireless Components Letters, v. 23, (6), 2013, article number 6514898, p. 318-320
Lu, Xing; Ma, Jun; Yue, Chik Patrick; Lau, Kei May Article
A novel BLU-free full-color LED projector using LED on silicon micro-displays
IEEE Photonics Technology Letters, v. 25, (23), 2013, article number 6626565, p. 2267-2270
Liu, Zhaojun; Chong, Wing Cheung; Wong, Ka Ming; Tam, Ka Ho; Lau, Kei May Article
A Novel Full-Color 3LED Projection System using R-G-B Light Emitting Diodes on Silicon (LEDoS) Micro-displays
Digest of Technical Papers - SID International Symposium, v. 44, (1), 2013, p. 838-841
Chong, Wing Cheung; Wong, Ka Ming; Liu, Zhaojun; Lau, Kei May Article
DC and RF Performance of Gate-Last AlN/GaN MOSHEMTs on Si With Regrown Source/Drain
IEEE Transactions on Electron Devices, v. 60, (10), 2013, article number 6576811, p. 3019-3024
Huang, Tongde; Liu, Zhao Jun; Zhu, Xueliang; Ma, Jun; Lu, Xing; Lau, Kei May Article
GaN-Based S-0-Wave Sensors on Silicon for Chemical and Biological Sensing in Liquid Environments
IEEE Sensors Journal, v. 13, (4), 2013, article number 6374634, p. 1245-1251
Lu, Xing; Lee, Chi Ming; Wu, Shu Yuen; Ho, Ho Pui; Lau, Kei May Article
High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates
IEEE Electron Device Letters, v. 34, (7), 2013, article number 6521369, p. 903-905
Zou, Xinbo; Wong, Ka Ming; Zhu, Xueliang; Chong, Wing Cheung; Ma, Jun; Lau, Kei May Article
Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers
Journal of Crystal Growth, v. 370, May 2013, p. 265-268
Ma, Jun; Zhu, Xueliang; Wong, Ka Ming; Zou, Xinbo; Lau, Kei May Article
Investigation of Forward Voltage Uniformity in Monolithic Light-Emitting Diode Arrays
IEEE Photonics Technology Letters, v. 25, (13), 2013, article number 6516916, p. 1290-1293
Liu, Zhaojun; Chong, Wing Cheung; Wong, Kaming; Keung, Chiwing; Lau, Kei May Article
Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric
IEEE Electron Device Letters, v. 34, (6), 2013, article number 6513267, p. 738-740
Meng, Di; Lin, Shuxun; Wen, Chengpaul; Wang, Maojun; Wang, Jinyan; Hao, Yi Long; Zhang, Yaohui; Lau, Kei May; Wu, Wen Gang Article
Material and Device Characteristics of Metamorphic In0.53Ga0.47As MOSHEMTs Grown on GaAs and Si Substrates by MOCVD
IEEE Transactions on Electron Devices, v. 60, (12), December 2013, article number 6627951, p. 4112-4118
Li, Qiang; Zhou, Xiuju; Tang, Chak Wah; Lau, Kei May Article
All-silicon and Epitaxially Grown III-V-on-silicon Photodetectors for On-chip Optical Interconnection Applications
SPIE Proceedings, v. 8628, March 2013
Poon, Andrew Wing On; Feng, Shaoqi; Li, Yu; Geng, Yu; Lau, Kei May Conference paper
Analysis on the CTLM and LTLM Applicability for GaN HEMTs Structure Alloyed Ohmic Contact Resistance Evaluation
IEEE Conference on Electron Devices and Solid-State Circuits, v. 2013, 2013, article number 6628128
Lin, Shuxun; Meng, Di; Wen, Cheng P.; Wang, Maojun; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Kei May Conference paper
Blue, Green, and Yellow LEDs Grown on Si Substrates
Asia Communications and Photonics Conference 2013: OSA Technical Digest, Optical Society of America, 2013
Zou, Xinbo; Chong, Wing Cheung; Wong, Ka Ming; Ma, Jun; Lau, Kei May Conference paper
Characteristics of Submicron-footprint TiO₂Based AlGaN/GaN MOSHEMT on SiC Substrate
IEEE Conference on Electron Devices and Solid-State Circuits, v. 2013, 2013, article number 6628138
Meng, Di; Lin, Shuxun; Wen, Cheng P.; Wang, Maojun; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Kei May; Wu, Wengang Conference paper
Cost-effective and Eco-friendly LED System-on-a-Chip (SoC)
2013 10th China International Forum on Solid State Lighting, ChinaSSL 2013, 2013, article number 7177356, p. 235-238
Lau, Kei May; Choi, Hoiwai; Ki, Wing-Hung; Lee, Ricky Shi Wei; Mok, Philip Kwok Tai; Sin, Johnny Kin On; Yue, Chik Patrick Conference paper
Effects of Pre-annealed Nickel Contact Layer on LED Device Performance Using NI/AG-based p-type Contacts
Asia Communications and Photonics Conference, ACP 2013, Beijing; China, 12 November 2013 through 15 November 2013
Chong, Wing Cheung; Lau, Kei May Conference paper
Enhancement-mode AlN/GaN MOSHEMTs Fabricated by Selective Area Regrowth of AlGaN Barrier Layer
Proceedings of the 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2013), Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 199-202
Huang, Tongde; Zhu, Xueliang; Lau, Kei May Conference paper
GaN Based Light-emitting Diode on Silicon (LEDoS) Micro-displays for BLU-free Full-color Projector Application
2013 IEEE Photonics Conference, IPC 2013, 2013, article number 6656489, p. 171-172
Liu, Zhaojun; Chong, Wing Cheung; Wong, Ka Ming; Lau, Kei May Conference paper

2012 29

30-nm Inverted In0.53Ga0.47As MOSHEMTs on Si Substrate Grown by MOCVD With Regrown Source/Drain
IEEE Electron Device Letters, v. 33, (10), October 2012, p. 1384-1386
Zhou, Xiuju; Li, Qiang; Tang, Chak Wah; Lau, Kei May Article
Effect of post-gate RTA on leakage current (I off) in GaN MOSHEMTs
Physica status solidi. C, Current topics in solid state physics, v. 9, (3-4), 2012, p. 919-922
Huang, Tongde; Wong, Ka Ming; Li, Ming; Zhou, Xiuju; Lau, Kei May Article
Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD
IEEE Electron Device Letters, v. 33, (8), August 2012, p. 1123-1125
Huang, Tongde; Zhu, Xueliang; Lau, Kei May Article
Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors
Optics letters, v. 37, (19), 1 October 2012, Pages 4035-4037
Feng, Shaoqi; Geng, Yu; Lau, Keimay; Poon, Andrew Wing On Article
Fabrication of 0.3-mu m T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition
Science China: Physics, Mechanics and Astronomy, v. 55, (4), April 2012, p. 644-648
Li, Haiou; Huang, Wei; Li, Qi; Li, Simin; Jiang, Xi; Tang, Chak Wah; Lau, Kei May; Zhang, Tianwen Article
Fabrication of 100-nm Metamorphic AlInAs/GaInAs HEMTs Grown on Si Substrates by MOCVD
IEEE Electron Device Letters, v. 33, (4), April 2012, p. 498-500
Li, Ming; Li, Haiou; Tang, Chak Wah; Lau, Kei May Article
High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array
Journal of materials science & technology, v. 28, (2), 2012, p. 132-136
Zhou, Wei; Li, Xiang; Xia, SuJing; Yang, Jie; Tang, Wu; Lau, Kei May Article
High-Performance Inverted In0.53Ga0.47As MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD
IEEE Electron Device Letters, v.33, (9), 2012, Sept, p. 1246-1248
Li, Qiang; Zhou, Xiuju; Tang, Chak Wah; Lau, Kei May Article
High-speed normal-incidence p-i-n InGaAs photodetectors grown on silicon substrates by MOCVD
IEEE Photonics Technology Letters, v. 24, (4), 2012, Article number 6086709, Pages 237-239
Gao, Yan; Zhong, Zhenyu; Feng, Shaoqi; Geng, Yu; Liang, Hu; Poon, Andrew Wing On; Lau, Kei May Article
Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate
Physica status solidi. C, Current topics in solid state physics, v. 9, (3-4), 2012, p. 473-475
Zhu, Xueliang; Ma, Jun; Huang, Tongde; Li, Ming; Wong, Ka Ming; Lau, Kei May Article
In0.53Ga0.47As MOS-HEMTs on GaAs and Si substrates grown by MOCVD
Physica Status Solidi. A, Applications and Materials Science, v. 209, (7), July 2012, p. 1380-1383
Zhou, Xiuju; Tang, Chak Wah; Li, Qiang; Lau, Kei May Article
Inverted-Type InGaAs Metal-Oxide-Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2 A/mm
Applied Physics Express, v.5, (10), 2012, Oct, article number 104201
Zhou, Xiuju; Li, Qiang; Tang, Chak Wah; Lau, Kei May Article
Low-leakage-current AlN/GaN MOSHFETs Using Al 2O 3 for increased 2DEG
IEEE Electron Device Letters, v. 33, (2), 2012, p. 212-214
Huang, Tongde; Zhu, Xue Liang; Wong, Ka Ming; Lau, Kei May Article
Thermally activated pop-in and indentation size effects in GaN films
Journal of physics. D, Applied physics, v. 45, (8), 2012, article number 085301
Lu, Junyong; Ren, Hang; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi Article
30nm Enhancement-mode In0.53Ga0.47As MOSFETs on Si Substrates Grown by MOCVD Exhibiting High Transconductance and Low On-resistance
2012 IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, 2012, Article number 6479153, pp. 32.5.1-32.5.4
Zhou, Xiuju; Li, Qiang; Tang, Chak Wah; Lau, Kei May Conference paper
A novel GaN -based Monolithic SAW/HEMT Oscillator on Silicon
Ultrasonics Symposium (IUS), 2012 IEEE International, Dresden, 2012, p. 2206-2209
Lu, Xing; Ma, Jun; Zhu, Xueliang; Lee, Chi Ming; Yue, Chik Patrick; Lau, Kei May Conference paper
Effect of antimony ambience on the interfacial misfit dislocations array in a GaSb epilayer grown on a GaAs substrate by MOCVD
2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, 2012, p. 5-9
Wu, Jie; Liu, Shaobin; Zhou, Wei; Tang, Wu; Lau, Kei May Conference paper
Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors
IEEE International Conference on Group IV Photonics, USA, 2012, p. 51-53
Feng, Shaoqi; Geng, Yu; Lau, Kei May; Poon, Andrew Wing On Conference paper
ETB-QW InAs MOSFET with Scaled Body for Improved Electrostatics
Technical digest - International Electron Devices Meeting, 2012, p. 32.3.1-32.3.4
Kim, Taewoo; Kim, Daehyun; Koh, Donghyi; Hill, Richard; Lee, Rinus T.P.; Wong, Manhoi; Cunningham, T.H.; Del Alamo, Jesús A.; Banerjee, Sanjay Kumar; Oktyabrsky, Serge R.; Greene, Andrew L.; Ohsawa, Y.; Trickett, Y.; Nakamura, G.; Li, Qiang; Lau, Kei May; Hobbs, Chris C.; Kirsch, Paul D.; Jammy, Raj Conference paper
Growth characteristics of AlGaN/GaN HEMTs on patterned Si (111) substrates using double AIN interlayers by MOCVD
Advanced materials research, v. 396, 2012, p. 372-375
Wang, Yong; Yu, Naisen; Wang, Congshun; Lau, Kei May Conference paper
Growth of butt-coupled p-i-n InGaAs waveguide photodetectors by MOCVD
2012 Electronic Materials Conference, Pennsylvania State University, PA, USA, 20 – 22 June 2012.
Geng, Yu; Feng, Shaoqi; Poon, Andrew Wing On; Lau, Kei May Conference paper
High-Performance AlN/GaN MOSHEMTs with Regrown Ohmic Contacts by MOCVD
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012, p. 576-578
Huang, Tongde; Zhu, Xueliang; Lau, Kei May Conference paper
Improved Crystalline Quality and Light Output Power of GaN-based Light-emitting Diodes Grown on Si Substrate by Buffer Optimization
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 9, (3-4), 2012, p. 572-575
Zou, Xinbo; Wong, Ka Ming; Yu, Naisen; Chen, Peng; Lau, Kei May Conference paper
Improved GaN-based LED Grown on Silicon (111) Using Stress/Dislocation-Engineering Interlayers
XVI International Conference on MOVPE (ICMOVPE), Busan, Korea, May 20-25, 2012
Ma, Jun; Zhu, Xueliang; Wong, Ka Ming; Zou, Xinbo; Lau, Kei May Conference paper
Improved resistivity of GaN with partially Mg-doped grown on Si (111) substrates by MOCVD
Advanced materials research, v. 442, 2012, p. 16-20
Wang, Yong; Yu, Naisen; Li, Ming; Lau, Kei May Conference paper
Inverted-type InAlAs/InGaAs MOSHEMT with Regrown Source/Drain Exhibiting High Current and Low On-resistance
27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012, Boston, MA, United States, 23 - 26 April 2012, Code 100649
Li, Qiang; Zhou, Xiuju; Tang, Chak Wah; Lau, Kei May Conference paper
Progress on the GaN-based LEDs and LDs
2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, 2012, p. 105-110
Wang, Yong; Zou, Yonggang; Ma, Xiaohui; Yu, Naisen; Deng, Dongmei; Lau, Kei May Conference paper
Resistivity control in unintentionally doped GaN films grown on Si (111) substrates by MOCVD
Advanced materials research, v. 415, 2012, p. 1959-1963
Wang, Yong; Yu, Naisen; Li, Ming; Lau, Kei May Conference paper
Silicon and hybrid silicon photodetectors for photonic integrated circuits
Asia Communications and Photonics Conference, Guangzhou, China, 2012, p. 1-1
Poon, Andrew Wing On; Feng, Shaoqi; Zhang, Yu; Li, Yu; Geng, Yu; Lau, Kei May Conference paper

2011 16

A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition
Applied physics letters, v. 99, (22), 2011, article number 221917
Zhou, Wei; Tang, Wu; Lau, Kei May Article
Active Matrix Programmable Monolithic Light Emitting Diodes on Silicon (LEDoS) Displays
Digest of Technical Papers - SID International Symposium, v. 42, (1 June 2011), 2011, Jun, p. 1215-1218
Liu, Zhaojun; Wong, Ka Ming; Chong, Wing Cheung; Lau, Kei May Article
Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD
IEEE electron device letters, v. 32, (9), September 2011, p. 1224-1226
Li, Haiou; Feng, Zhihong; Tang, Chak Wah; Lau, Kei May Article
Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition
Chinese Physics, v. 20, (6), June 2011, article number 068502
Li, Hai-Ou; Huang, Wei; Tang, Chak Wah; Deng, Xiao-Fang; May, Lau Kei Article
Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD
Chinese Physics Letters, v. 28, (5), May 2011, article number 057102
Wang, Yong; Yu, Naisen; Li, Ming; Lau, Kei May Article
Material characteristics of InGaN based light emitting diodes grown on porous Si substrates
Journal of Crystal Growth, v. 315, (1), 2011, Jan, p. 238-241
Deng, Dongmei; Chiu, Chinghsueh; Kuo, Haochung; Chen, Peng; Lau, Kei May Article
Metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD
Science China: Physics, Mechanics and Astronomy, v. 54, (10), 2011, p. 1815-1818
Li, Haiou; Huang, Wei; Li, Simin; Tang, Chak Wah; Lau, Kei May Article
Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate
IEEE journal of quantum electronics, v. 47, (7), July 2011, p. 899-906
Chiu, Chinghsueh; Lin, Chienchung; Deng, DongMei; Lin, Dawei; Li, Jinchai; Li, Zhenyu; Shu, Giawei; Lu, Tien-Chang; Shen, Jilin; Kuo, Haochung; Lau, Kei May Article
Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper
Optics express, v. 19, (14), July 2011, p. A956-A961
Lau, Kei May; Wong, Ka Ming; Zou, Xinbo; Chen, Peng Article
Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
AIP Advances, v. 1, (3), 2011, article number 032132
Lu, Junyong; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi Article
Active matrix programmable monolithic light emitting diodes on silicon (LEDoS) displays
49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011, v. 3, 2011, p. 1215-1218
Liu, Zhaojun; Wong, Ka Ming; Chong, Wing Cheung; Lau, Kei May Conference paper
InAlAs/InGaAs Metamorphic HEMT and MOS-HEMT with Regrown Source/drain by MOCVD
69th Annual Device Research Conference, Santa Barbara, USA, 2011, Article number 5994437, p. 107-108
Zhou, Xiuju; Li, Qiang; Tang, Chak Wah; Lau, Kei May Conference paper
InGaAs MOS-HEMTs on Si Substrates Grown by MOCVD
The 23rd International Conference on Indium Phosphide and Related Materials, Berlin, Germany, 2011, article number 5978338
Zhou, Xiuju; Tang, Chak Wah; Li, Qiang; Lau, Kei May Conference paper
InP Lattice-Matched HEMT with Regrown Source/Drain by MOCVD
International Conference on Indium Phosphide and Related Materials, Berlin, Germany, 2011, article number 5978339
Li, Qiang; Li, Ming; Tang, Chak Wah; Lau, Kei May Conference paper
Metamorphic p-i-n InGaAs photodetectors grown by MOCVD
2011 Electronic Materials Conference, Santa Barbara, USA, 22 - 24 June 2011
Gao, Yan; Zhong, Zhenyu; Liang, Hu; Geng, Yu; Feng, Shaoqi; Lau, Kei May; Poon, Andrew Wing On Conference paper
Optical and electrical properties of GaN-based light emitting diodes grown on micro and nano-scale patterned Si substrate
Proceedings of SPIE--the international society for optical engineering, v. 8123, 2011
Chiu, Chinghsueh; Lin, Chienchung; Deng, DongMei; Kuo, Haochung; Lau, Kei May Conference paper

2010 24

Determining phonon deformation potentials of hexagonal GaN with stress modulation
Journal of Applied Physics, v. 108, (12), 2010, article number 123520
Lu, Junyong; Wang, ZhiJia; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi Article
Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)
Chinese Physics Letters, v. 27, (3), 2010, MAR
Wang, Hui; Liang, Hu; Wang, Yong; Ng, Karwei; Deng, Dongmei; Lau, Kei May Article
Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD
Science china-physics MECHANICS & ASTRONOMY, v. 53, (9), 2010, SEP, p. 1578-1581
Wang, Yong; Yu, NaiSen; Deng, DongMei; Li, Ming; Sun, Fei; Lau, Kei May Article
InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
Applied physics letters, v. 96, (20), 2010, MAY 17, article number 201106
Deng, Dongmei; Yu, Naisen; Wang, Yong; Zou, Xinbo; Kuo, Haochung; Chen, Peng; Lau, Kei May Article
Transfer of GaN-Based Light-Emitting Diodes From Silicon Growth Substrate to Copper
IEEE electron device letters, v. 31, (2), 2010, FEB, p. 132-134
Wong, Ka Ming; Zou, Xinbo; Chen, Peng; Lau, Kei May Article
0.3-μm gate-length metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2010, p. 1374-1376
Li, Haiou; Li, Ming; Tang, Chak Wah; Zhong, Zhenyu; Lau, Kei May Conference paper
Epitaxial growth of III-nitride LEDs on porous Si substrates
The 11th National MOCVD Conference, Suzhou, China, Jan 13-14, 2010
Deng, Dongmei; Yu, Naisen; Wang, Yong; Zou, Xinbo; Chen, Peng; Lau, Kei May Conference paper
GaN-based Blue LEDs Grown on Si and Transferred to Copper Substrates with Enhanced Output Power
37th International Symposium on Compound Semiconductors ISCS, Kagawa, Japan, May 30- June 4, 2010
Wong, Ka Ming; Zou, Xinbo; Chen, Peng; Lau, Kei May Conference paper
GaN-based Lamb-wave Mass-sensors on Silicon Substrates
Proceedings of IEEE Sensors, 2010, p. 2008-2011
Lee, Chi Ming; Wong, Ka Ming; Chen, Peng; Lau, Kei May Conference paper
Hetero-epitaxy of III-V compounds by MOCVD on silicon substrates
ECS Transactions, v. 28, (5), 2010, p. 227-231
Tang, Chak Wah; Zhong, Zhenyu; Lau, Kei May Conference paper
High-performance implant-free InGaAs MOSFETs on GaAs substrate grown by MOCVD
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2010, p. 1377-1379
Zhou, Xiuju; Tang, Chak Wah; Li, Haiou; Chen, Peng; Lau, Kei May Conference paper
High-resolution Light Emitting Diode on Silicon (LEDoS) Micro-display
International Workshop on Nitride Semiconductors 2010, Tampa, Florida, USA, September 20-24, 2010
Liu, Zhaojun; Liang, Hu; Chen, Peng; Lau, Kei May Conference paper
III-Nitride Devices on Silicon Substrates by MOCVD
IEEE 2010 Lester Eastman Conference on High Performance Devices (LEC), RPI, Troy, NY, USA, August 3-5, 2010
Lau, Kei May Conference paper
III-Nitride LEDs Grown on Porous Si Substrtes
15th International Conference on Metal Organic Vapor Phase Epitaxy, Lake Tahoe, USA, May 23-28, 2010
Deng, Dongmei; Yu, Naisen; Wang, Yong; Zou, Xinbo; Chen, Peng; Lau, Kei May Conference paper
III-nitride LEDs on Si Substrates
SPIE Photonics West, San Francisco, CA, USA, 23 - 28 January 2010
Lau, Kei May Conference paper
Improved AlGaN/GaN HEMTs grown on Si substrates by MOCVD
2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010, 2010, p. 68-71
Wang, Yong; Yu, Naisen; Deng, DongMei; Li, Ming; Sun, Fei; Lau, Kei May Conference paper
In situ monitoring of GaAs grown on Si(100) by Metal Organic Chemical Vapor Deposition
15th International Conference on MOVPE, Lake Tahoe, Navada, USA, May 23-28, 2010
Zhong, Zhenyu; Lau, Kei May Conference paper
In0.53Ga0.47As MOS-HEMTs on Si Substrates Grown by MOCVD
InP and Related Materials, Berlin, Germany, 23-27 May 2011
Zhou, Xiuju; Tang, Chak Wah; Li, Qiang; Lau, Kei May Conference paper
Lamb-wave UV-sensors Fabricated with GaN-based Thin Films on Silicon Substrates
International Workshop on Nitride Semiconductors, Tampa, Florida, USA, September 19-24, 2010
Lee, Chi Ming; Wong, Ka Ming; Chen, Peng; Lau, Kei-May Conference paper
Light Extraction Enhancement from GaN-based Thin-Film LEDs Grown on Silicon after Substrate Removal Using HNA Solution
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 7, (7-8), 2010, p. 2171-2173
Zou, Xinbo; Liang, Hu; Lau, Kei May Conference paper
MOCVD of Device Structures
11th National Conference on MOCVD, Suzhou, China, January 13-16, 2010
Lau, Kei May Conference paper
Optimization of GaAs buffer layer for high quality InP epitaxial layer grown on Si substrate for electronic devices applications by MOCVD
11th National MOCVD Conference, China, Suzhou, China, January 12-15, 2010
Zhong, Zhenyu; Tang, Chak Wah; Lau, Kei May Conference paper
Will LED on Si become Mainstream Technology
International Electron Devices and Materials Symposium, Chungli, Taiwan, Nov 18-19, 2010
Lau, Kei May Conference paper
Will LED on Si Become Mainstream Technology?
China International Optoelectronics Expo, Shenzhen, China, Septeember 6-9, 2010
Lau, Kei May Conference paper

2009 12

Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon
Applied physics letters, v. 94, (1), 2009, JAN 5, article number 012101
Chen, Peng; Chen, Winnie V.; Yu, Paul K.L.; Tang, Chak Wah; Lau, Kei May; Mawst, Luke James; Paulson, Charles A.; Kuech, Thomas F.; Lau, S.S. Article
HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice
Journal of Crystal Growth, v. 311, (10), 2009, MAY 1, p. 3089-3092
Li, Zhenyu; Lu, Tien-Chang; Kuo, Haochung; Wang, Shingchung; Lo, Minghua; Lau, Kei May Article
Improved GaN Grown on Si(111) Substrate Using Ammonia Flow Modulation on SiN (x) Mask Layer by MOCVD
Science in China Series e-technological sciences, v. 52, (9, Sp. Iss. SI), 2009, Sep, p. 2758-2761
Yu, NaiSen; Wang, Yong; Wang, Hui; Ng, KaiWei; Lau, Kei May Article
InP Layer Transfer with Masked Implantation
Electrochemical and SOLID STATE Letters, v. 12, (4), 2009, p. H149-H150
Chen, Wayne; Bandaru, Prabhakar R.; Tang, Chak Wah; Lau, Kei May; Kuech, Thomas F.; Lau, S.S. Article
Microbridge tests on gallium nitride thin films
Journal of micromechanics and microengineering, v. 19, (9), September 2009, article number 095019
Huang, Haiyou; Li, ZhiYing; Lu, Junyong; Wang, Zhi-Jia; Wang, Chong-Shun; Lau, Kei May; Chen, Kevin Jing; Zhang, Tongyi Article
Monolithic LED Microdisplay on Active Matrix Substrate Using Flip-Chip Technology
IEEE journal of selected topics in quantum electronics, v. 15, (4), 2009, JUL-AUG, p. 1298-1302
Liu, Zhao Jun; Wong, Ka Ming; Keung, Chi Wing; Tang, Chak Wah; Lau, Kei May Article
GaN Based Active Matrix Light Emitting Diode Array by Flip-Chip Technology
AOE 2008: ASIA OPTICAL FIBER COMMUNICATION AND OPTOELECTRONIC EXPOSITION AND CONFERENCE, 2009
Liu, Zhao Jun; Keung, Chi Wing; Lau, Kei May Conference paper
GaN-based Blue LEDs Grown on Si and Transferred to Copper Substrates with Enhanced Output Power
36th International Symposium on Compound Semiconductors, Santa Barbara, USA, Aug 30 - Sept 2, 2009
Wong, Ka Ming; Zou, Xinbo; Chen, Peng; Lau, Kei May Conference paper
GaN-based Monolithic LED Micro-arrays
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009), 2009, p. 730-731
Liu, Zhao Jun; Wong, Ka Ming; Tang, Chak Wah; Lau, Kei May Conference paper
Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2009, p. 136-139
Tang, Chak Wah; Li, Haiou; Zhong, Zhenyu; Ng, Kai Lun; Lau, Kei May Conference paper
III-nitride Based Ultraviolet LED Micro-array Module for Large-scale Display
37th International Symposium on Compound Semiconductors, Kagawa, Japan, May 31-June 4, 2010
Liu, Zhao Jun; Wong, Ka Ming; Keung, Chi Wing; Liang, Hu; Chen, Peng; Lau, Kei May Conference paper
Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009), 2009, p. 234-235
Chen, Peng; Wong, Ka Ming; Lau, Kei May; Lau, S.S. Conference paper

2008 15

Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrate
Journal of Crystal Growth, v. 310, (23), 2008, NOV 15, p. 5170-5174
Chiu, Chinhua; Li, Zhenyu; Chao, Chuli; Lo, Minghua; Kuo, Haochung; Yu, Peichen; Lu, Tien-Chang; Wang, Shingchung; Lau, Kei May; Cheng, S.J. Article
Growth and characterizations of GaN-based LEDs grown on wet-etched stripe-patterned sapphire substrates
Journal of Electronic Materials, v. 37, (10), 2008, OCT, p. 1560-1564
Ng, Kar Wei; Hwang, Jung Min; Lau, Kei May Article
Low-frequency noise properties of double channel AlGaN/GaN HEMTs
Solid-state electronics, v. 52, (5), 2008, MAY, p. 606-611
Jha, Shrawan Kumar; Surya, Charles C.; Chen, Kevin Jing; Lau, Kei May; Jelencovie, E. Article
Metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by MOCVD
IEEE electron device letters, v. 29, (6), 2008, JUN, p. 561-564
Li, Haiou; Tang, Chak Wah; Lau, Kei May Article
Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template
Applied physics letters, v. 93, (8), 2008, AUG 25, article number 081108
Chiu, Chinghua; Yen, Hishsuan; Chao, Chuli; Li, Zhenyu; Yu, Peichen; Kuo, Haochung; Lu, Tien-Chang; Wang, Shingchung; Lau, Kei May; Cheng, S.J. Article
Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces
Journal of lightwave technology, v. 26, (9-12), 2008, MAY-JUN, p. 1455-1463
Lee, Yaju; Kuo, Haochung; Lu, Tien-Chang; Wang, Shingchung; Ng, Kar Wai; Lau, Kei May; Yang, Zupo; Chang, Allan Shih-Ping; Lin, Shawnyu Article
AlInAs/GaInAs mHEMTs on Silicon Substrates Grown by MOCVD
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, p. 723-726
Lau, Kei May; Tang, Chak Wah; Li, Haiou; Zhong, Zhenyu Conference paper
Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 5, (6), 2008, p. 1892-1894
Li, Baikui; Chen, Jing; Lau, Kei May; Ge, Weikun; Wang, Jiannong Conference paper
Epitaxial lateral overgrowth of GaN-based light emitting diodes on SiO ₂ nanorod-array patterned sapphire substrates by MOCVD
Proceedings of SPIE - The International Society for Optical Engineering, v. 7135, 2008
Chiu, Chinhua; Chao, Chuli; Lo, Minghua; Cheng, Yuhjen; Kuo, Haochung; Yu, Peichen; Lu, Tien-Chang; Wang, Shingchung; Lau, Kei May Conference paper
Evidence of mobile holes on GaN HFET barrier layer surface - root cause of high power transistor amplifier current collapse
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, 2008, p. 1090-1093
Wen, Chengpaul; Wang, Jinyan; Hao, Yi Long; Zhang, Yaohui; Lau, Kei May Conference paper
High quality GaAs film on Si (100) with excellent surface morphology grown by MOCVD
2008 Electronic Material Conference (EMC2008), University California, Santa Barbara, CA
Zhong, Zhenyu; Lau, Kei May Conference paper
Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiN x mask layer by MOCVD
2008 Electronic Material Conference (EMC2008), CA, United States, 26 - 27 June 2008
Yu, Naisen; Wang, Yong; Wang, Hui; Ng, Kar Wai; Lau, Kei May Conference paper
Investigation of the natural degradation of green LEDs
2008 Electronic Material Conference (EMC2008), University California, Santa Barbara, CA
Deng, Dongmei; Ng, Kar Wai; Liang, Hu; Qi, Yundong; Lau, Kei May Conference paper
Metamorphic AlInAs/GaInAs HEMTs on Si Substrates by MOCVD
14th International Conference Metalorganic Vapor Phase Epitaxy IC MOVPE, Metz, France
Lau, Kei May; Tang, Chak Wah; Zhong, Zhenyu; Li, Haiou Conference paper
Transient leakage current technique for MIS HEMT (A12O3/AlGaN/GaN) dielectric semiconductor interface property characterization
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, 2008, p. 1440-1442
Wen, Chengpaul; Wang, Jinyan; Chen, Hongwei; Hao, Yi Long; Lau, Kei May; Tang, Chak Wah Conference paper

2007 24

1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTs
Microwave and optical technology letters, v. 49, (6), 2007, JUN, p. 1360-1362
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yu Gang; Lau, Kei May; Chen, Kevin Jing Article
A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel Al0.3_Ga0.7_N/Al0.05_Ga0.95_{N/GaN HEMTs}
红外与毫米波学报=Journal of Infrared and Millimeter Waves, v. 2007, (04), 2007, p. 241-245
程知群; 蔡勇; 劉杰; 周玉剛; 劉稚美; 陳敬 Article
Cathodoluminescence study of InGaN/GaN quantum-well LED structures grown on a Si substrate
Journal of Electronic Materials, v. 36, (9), 2007, SEP, p. 1144-1148
Xu, Jun; Chen, Li; Yu, Lisheng; Liang, Hu; Zhang, Baoshun; Lau, Kei May Article
DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
IEEE transactions on electron devices, v. 54, (1), January 2007
Liu, Jie; Zhou, Yugang; Zhu, Jia; Cai, Yong; Lau, Kei May; Chen, Kevin Jing Article
Device isolation by plasma treatment for planar integration of enhancement/depletion-mode AlGaN/GaN high electron mobility transistors
Japanese Journal of Applied Physics, v. 46, pt. 1, no. 4B, 24 Apr 2007, p. 2330-2333
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates
Journal of Crystal Growth, v. 298, (Sp. Iss. SI), 2007, JAN, p. 725-730
Zhang, Baoshun; Liang, Hu; Wang, Yong; Feng, Zhihong; Ng, Kar Wei; Lau, Kei May Article
High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits
IEEE electron device letters, v. 28, (5), 2007, MAY, p. 328-331
Cai, Yong; Cheng, Zhiqun; Yang, Zhenchuan; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Integration of enhancement and depletion-mode AlGaN/GaN MIS-HFETs by fluoride-based plasma treatment
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 204, (6), 2007, JUN, p. 2023-2027
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Metamorphic heterostructure InP/GaAsSb/InP HBTs on GaAs substrates by MOCVD
IEEE electron device letters, v. 28, (7), 2007, JUL, p. 539-542
Zhou, Wei; Tang, Chak Wah; Zhu, Jia; Lau, Kei May; Zeng, Yuping; Liu, Honggang; Tao, Nick G.M.; Bolognesi, Colombo R. Article
MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
Chinese Physics, v. 16, (11), 2007, NOV, p. 3494-3497
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yu Gang; Lau, Kei May; Chen, Kevin Jing Article
Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse
IEEE electron device letters, v. 28, (3), 2007, MAR, p. 189-191
Song, Di; Liu, Jie; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Surface acoustic wave device on AlGaN/GaN heterostructure using two-dimensional electron gas interdigital transducers
Applied physics letters, v. 90, (21), 2007, MAY 21, Article number 213506
Wong, King Yuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Temperature dependence of cathodoluminescence spectra and stress analysis of a GaN layer grown on a mesa structured Si substrate
Journal of applied physics, v. 102, (10), 2007, NOV 15, article number 104508
Xu, Jun; Chen, Li; Yu, Lisheng; Liang, Hu; Zhang, Baolong; Lau, Kei May Article
Comparison of Ni/Au, ITO, and ATO-based current spreading layers for near-ultraviolet light-emitting diodes
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 4, (7), 2007, p. 2646-2649
Chong, Wing Cheung; Lau, Kei May Conference paper
Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment
Proceedings of International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007, 2007, p. 313-315
Li, Haiou; Tang, Chak Wah; Chen, Kevin Jing; Lau, Kei May Conference paper
Fabrication of position-controllable GaN nanostructures
Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, 2007, p. 985-988
Yang, Zhen Chuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevinjing Conference paper
Fabrication of Vertical Position-controllable GaN Nanowires on (111) Si Substrate
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 813-816
Wang, Congshun; Yang, Zhenchuan; Zhang, Baoshun; Wang, Yong; Wang, Hui; Lau, Kei May; Chen, Kevin Jing Conference paper
Low noise distributed amplifier using composite-channel Al _0.3Ga0.7N/Al_0.05Ga_0.95N/GaN HEMTs
IET Conference Publications, (529 CP), 2007, p. 513-519
Cheng, Zhiqun; Wu, Yichao; Sun, Lingling; Lau, Kei May; Chen, Kevin Jing Conference paper
Microwave noise characterization of enhancement-mode AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
65th DRC Device Research Conference, 2007, p. 77-78
Liu, Jie; Song, Di; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevinjing Conference paper
Planar two-dimensional electron gas (2DEG) IDT SAW filter on AlGaN/GaN heterostructure
IEEE MTT-S International Microwave Symposium Digest, 2007, p. 2043-2046
Wong, Kingyuen; Tang, Wilson; Lau, Kei May; Chen, Kevin Jing Conference paper
Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment
Technical Digest - International Electron Devices Meeting, IEDM, 2007, p. 389-392
Yi, Congwen; Wang, Ruonan; Huang, Wei; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS)
ECS Transactions, v. 11, (5), 2007, p. 225-230
Lee, Yaju; Chiu, Chinhua; Kuo, Haochung; Lu, Tien-Chang; Wang, Shingchung; Ng, Kar Wai; Lau, Kei May; Yang, Zupo; Chang, Allan S.P.; Lin, Shawnyu Conference paper
SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabrication of suspended GaN microstructures
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p. 670-672
Yang, Zhen Chuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Conference paper
Two-dimensional Electron Gas (2DEG) IDT SAW Devices on AlGaN/GaN Heterostructure
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 1045-1048
Wong, Kingyuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper

2006 25

AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
IEEE electron device letters, v. 27, (1), 2006, JAN, p. 10-12
Liu, Jie; Zhou, Yu Gang; Zhang, Jizhi; Lau, Kei May; Chen, Kevin Jing Article
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
IEEE transactions on electron devices, v. 53, (9), 2006, SEP, p. 2207-2215
Cai, Yong; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing Article
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
IEEE transactions on electron devices, v. 53, (6), 2006, JUN, p. 1474-1477
Jia, Shuo; Cai, Yong; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Article
Enhancement-mode AlGaN/GaN HEMTs with low on-resistance and low knee-voltage
IEICE transactions on electronics, v. E89C, (7), 2006, JUL, p. 1025-1030
Cai, Yong; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing Article
Enhancement-mode Si3N4/AlGaN/GaN MISHFETs
IEEE electron device letters, v. 27, (10), 2006, OCT, p. 793-795
Wang, Ruonan; Cai, Yong; Tang, Chi-Wai; Lau, Kei May; Chen, Kevin Jing Article
Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 203, (7), 2006, MAY, p. 1712-1715
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Article
GaN-on-pattemed-silicon (GPS) technique for fabrication of GaN-based MEMS
Sensors and Actuators a-physical, v. 130, (Sp. Iss. SI), 2006, AUG 14, p. 371-378
Yang, Zhenchuan; Wang, Ruonan; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin J. Article
Influence of oxidation and annealing temperatures on quality of Ga2O3 film grown on GaN
Thin solid films, v. 515, (4), 2006, DEC 5, p. 2111-2115
Lin, Limin; Luo, Yi; Lai, Pui To; Lau, Kei May Article
Isoelectronic indium-surfactant-doped Al0.3Ga0.7N/GaN high electron mobility transistors
Applied physics letters, v. 88, (12), 2006, MAR 20
Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing; Lau, Kei May Article
Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique
Applied physics letters, v. 88, (4), 2006, JAN 23, article number 041913
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Article
Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment
IEEE transactions on electron devices, v. 53, (9), 2006, SEP, p. 2223-2230
Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE electron device letters, v. 27, (8), 2006, AUG, p. 633-635
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
A planar integration process for E/D-mode AlGaN/GaN HEMT DCFL integrated circuits
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, Article number 4110036, p. 261-264
Wang, Ruonan; Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch
Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2312-2316
Liu, Jie; Zhou, Yugang; Zhu, Jia; Lau, Kei May; Chen, Kevin Jing Conference paper
Comparison of Ni/Au, Ag/ITO, and Ag/ATO Curent-spreading Layers for Violet Light-Emitting Diodes
Int. Workshop on Nitride Semiconductors, Kyoto, Japan, Oct 22-27, 2006
Chong, Wing Cheung; Lau, Kei May Conference paper
Core Technologies for III-Nitride Integrated Microsensors
6th Emerging Information Technology Conference, Richardson, Texas, USA, Aug 10-13, 2006
Chen, Kevin Jing; Lau, Kei May Conference paper
Effects of NO annealing on the characteristics of GaN MIS capacitor
2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 2006, p. 561-564
Lin, Limin; Lai, Pui To; Lau, Kei May Conference paper
Effects of oxidation temperature on Ga₂O₃ film thermally grown on GaN
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, 2006, p. 605-608
Lin, Limin; Luo, Yi; Lai, Pui To; Lau, Kei May Conference paper
Enhancement-Mode A1GaN/GaN Metal Insulator Semiconductor HFETs Using Fluoride-Based Plasma Treatment Technique
Int. Workshop on Nitride Semiconductors, Kyoto, Japan, Oct 22-27, 2006
Wang, Ruonan; Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2368-2372
Jia, Shuo; Cai, Yong; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Conference paper
GaN MENS by MOCVD Growth of GaN on Patterned Si Substrates and Wet Etching
21th Meeting of the Electrochemical Society, Chicago, Illinois, May 6-10, 2007
Yang, Zhenchuan; Zhang, Baoshun; Chen, Kevin Jing; Lau, Kei May Conference paper
GaN-based Direct-Coupled FET Logic (DCFL) Digital Circuits Operating at 375 oC
2006 Int. Conf. on Solid State Devices and Materials, Yokahama, Japan, Sept 12-15, 2006
Cai, Y.; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor
Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC 2006), 2006, article number 4099867, p. 105-108
Jha, S.K.; Surya, C.; Chen. K.J.; Lau, K.M. Conference paper
Normally-off AlGaN/GaN low-density-drain HEMTs (LDD-HEMT) with enhanced breakdown voltage and suppressed current collapse
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, 2007, p. 257-260
Song, Di; Liu, Jie; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
Planar integration of SAW filter with HEMT on AlGaN/GaN heterostructure using fluoride-based plasma treatment
Proceedings - IEEE Ultrasonics Symposium, v. 1, 2006, p. 281-284
Wong, Kingyuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper

2005 28

AlGaN-GaN double-channel HEMTs
IEEE transactions on electron devices, v. 52, (4), 2005, APR, p. 438-446
Chu, Rongming; Zhou, Yu Gang; Liu, Jie; Wang, Deliang; Chen, Kevin Jing; Lau, Kei May Article
AlGaN-GaNHEMTs on patterned silicon (111) substrate
IEEE electron device letters, v. 26, (3), March 2005, p. 130-132
Jia, Shuo; Dikme, Yilmaz Lmaz; Wang, Deliang; Chen, Kevin Jing; Lau, Kei May; Heuken, Michael Article
Broadband microwave noise characteristics of high-linearity composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
IEEE electron device letters, v. 26, (8), 2005, AUG, p. 521-523
Cheng, Zhiqun; Liu, Jie; Zhou, Yu Gang; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Article
Comparison of blue and green InGaN/GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy
Applied physics letters, v. 86, (10), 2005, MAR 7, article number 101903
Qi, Yundong; Liang, Hu; Wang, Deliang; Lü, Zhendong; Tang, Chak Wah; Lau, Kei May Article
Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition
Journal of Electronic Materials, v. 34, (1), 2005, JAN, p. 112-118
Zhou, Yu Gang; Wang, Deliang; Chu, Rongming; Tang, Chak Wah; Qi, Yundong; Lü, Zhendong; Chen, Kevin Jing; Lau, Kei May Article
Doping concentration and structural dependences of the thermal stability of the 2DEG in GaN-based high-electron-mobility transistor structures
Japanese Journal of Applied Physics, v. 44, pt. 2 no. 1-7, 2005, p. L21-L23
Feng, Zhihong; Zhou, Yu Gang; Cai, Shujun; Lau, Kei May Article
Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy
Journal of Crystal Growth, 272, 1-4, December 2004
Qi, YuDong; Liang, Hu; Tang, Chak Wah; Lü, Zhendong; Lau, Kei May Article
Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates
IEEE photonics technology letters, v. 17, (9), 2005, SEP, p. 1812-1814
Feng, Zhihong; Lau, Kei May Article
Enhanced-performance of AlGaN-GaNHEMTs grown on grooved sapphire substrates
IEEE electron device letters, v. 26, (12), December 2005, p. 870-872
Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing; Lau, Kei May Article
Highly linear A1(0.3)Ga(0.7)N-A1(0.05)Ga(0.95)N-GaN composite-channel HEMTs
IEEE electron device letters, v. 26, (3), 2005, MAR, p. 145-147
Liu, Jie; Zhou, Yu Gang; Chu, Rongming; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Article
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE electron device letters, v. 26, (7), 2005, JUL, p. 435-437
Cai, Yong; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films
Applied physics letters, v. 86, (3), 2005, JAN 17
Cai, Yong; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition
Journal of applied physics, v. 97, (5), 2005, MAR 1
Wang, Deliang; Jia, Shuo; Chen, Kevin Jing; Lau, Kei May; Dikme, Yilmaz Lmaz; Van Gemmern, Philipp; Lin, YC; Kalisch, Holger; Jansen, Rolf H.; Heuken, Michael Article
Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor
IEEE electron device letters, v. 26, (7), 2005, JUL, p. 432-434
Chu, Chun San; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
Thermally activated carrier transfer processes in InGaN/GaN multi-quantum-well light-emitting devices
Journal of applied physics, v. 98, (2), 2005, p. 1-5
Yang, Chunlei; Ding, Lu; Wang, Jiannong; Fung, Kwok Kwong; Ge, Weikun; Liang, Hu; Yu, Lisheng; Qi, Yundong; Wang, Deliang; Lü, Zhendong; Lau, Kei May Article
低温近场光学显微术对InGaN／GaN多量子阱电致发光温度特性的研究
物理学报=Acta Physica Sinica, v. 2005, (11), 2005, p. 5344-5349
徐耿釗; 梁琥; 白永強; 劉紀美; 朱星 Article
A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure
Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, 2005, p. 385-388
Chu, Chun San; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May Conference paper
AlGaN/GaN HEMTs on Grooved Sapphire Substrate,'6th Int. Conf. on Nitride Semiconductors,(ICNS-6)
Bremen, Germany, Aug. 28-Sep. 2, 2005
Feng, ZhiHong; Cai, ShuJin; Chen, Kevin Jing; Lau, Kei May Conference paper
Fabrication of Suspended GaN Microstructures Using GaN on Patterned Silicon (GPS) Technique
6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Yang, Z.; Wang, Rong; Jia, Shuo; Wang, Deliang; Zhang, Bao Shun; Chen, Kevin Jing; Lau, Kei May Conference paper
GaN on Patterned Silicon (GPS) technique for fabrication of GaN-based MEMS
Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05, v. 1, 2005, p. 887-890
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Chen, Kevin Jing; Lau, Kei May Conference paper
GaN on Patterned Silicon (GPS) technique for GaN-based integrated microsensors
Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 298-301
Yang, Zhen Chuan; Wang, Ruonan; Wang, Deliang; Zhang, Baoshun; Chen, Kevinjing; Lau, Kei May Conference paper
Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth
Physica Status Solidi C: Conferences, v. 2, (7), 2005, p. 2663-2667
Zhou, Yugang; Chu, Rongming; Liu, Jie; Chen, Kevin Jing; Lau, Kei May Conference paper
High-Performance Metamorphic InP/GaAsSb/InP “Type-II” DHBTs Grown on GaAs Substrates
2006 International Conference on Compound Semiconductor Manufacturing Technology, Vancouver, BC, Canada, Digest, p.157, April 24-27, 2006
Zeng, Yuping; Liu, Honggang; Tao, Nick G.M.; Bolognesi, Colombo R.; Zhou, Wei; Tang, Chak Wah; Lau, Kei May Conference paper
MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates
2006 International Conference on Compound Semiconductor Manufacturing Technology, Vancouver, BC, Canada, Digest, p.243, April 24-27, 2006.
Tang, Chak Wah; Jiang, L.; Lau, Kei May; Chen, Kevin Jing Conference paper
Monolithic integrated c-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 1112-1115
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing Conference paper
Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits
Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 771-774
Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Chen, Kevinjing; Lau, Kei May Conference paper
Reduced Gate-bias dependence of 2DEG mobility in a Composite-Channel HEMT
6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Zhu, Jia; Liu, J.; Zhou, Yu Gang; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Conference paper
Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Device Research Conference - Conference Digest, DRC, v. 2005, 2005, p. 179-180
Cai, Yong; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May Conference paper

2004 15

Al0.10Ga0.90As-GaAs microcoolers
IEEE Electron Device Letters, v. 25, (6), 2004, June, p. 345-347
Zhang, Jizhi; Anderson, Neal G.; Lau, Kei May Article
Characterization of GaN grown on patterned Si(111) substrates
Journal of Crystal Growth, v. 272, (1-4), 2004, DEC 10, p. 489-495
Wang, Deliang; Dikme, Yilmaz Lmaz; Jia, Shuo; Chen, Kevin Jing; Lau, Kei May; Van Gemmern, Philipp; Lin, YC; Kalisch, Holger; Jansen, RoIf H.; Heuken, Michael Article
Efficient wet etching of GaN and p-GaN assisted with chopped UV source
Superlattices and microstructures, v. 35, (1-2), 2004, JAN-FEB, p. 45-57
Hwang, Jungmin; Ho, KY; Hwang, ZH; Hung, Weihsiu; Lau, Kei May; Hwang, Hueyliang Article
Enhanced thermal stability of the two-dimensional electron gas in GaN/AlGaN/GaN heterostructures by Si3N4 surface-passivation-induced strain solidification
Applied physics letters, v. 85, (22), 2004, NOV 29, p. 5248-5250
Feng, Zhihong; Zhou, Yu Gang; Cai, Shujun; Lau, Kei May Article
GaAs Esaki junctions with autocompensated impurities in the n side by metalorganic chemical vapor deposition
Applied physics letters, v. 85, (19), 2004, NOV 8, p. 4415-4417
Zhang, Jizhi; Lau, Kei May Article
GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy
Journal of Crystal Growth, v. 272, (1-4), 2004, DEC 10, p. 327-332
Feng, Zhihong; Qi, Yundong; Lü, Zhendong; Lau, Kei May Article
Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN
Applied physics letters, v. 84, (10), 2004, MAR 8, p. 1710-1712
Kim, Hanki; Seong, Taeyeon; Adesida, Ilesanmi A.; Tang, Chak Wah; Lau, Kei May Article
Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity
Technical Digest - International Electron Devices Meeting, IEDM, 2004, p. 811-814
Liu, Jie; Zhou, Yugang; Chu, Rongming; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Conference paper
Dual wavelength emission InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy
12th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 12), Hawaii, USA, 30 May - 4 June 2004
Qi, Yu Dong; Liang, Hu; Lau, Kei May Conference paper
Effect of different SiN x Passivation and Their Strain on the Reliability of GaN-Based HEMT Structures
2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25
Feng, Zhi Hong; Zhou, Yu Gang; Cai, Shu Jun; Lau, Kei May Conference paper
GaN-Based Blue-Light-Emitting Diodes Grown and Fabricated on Patterned Sapphire Substrates Using Metalorganic Vapor Phase Epitaxy
12th Int. Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XII), Maui, Hawaii, USA, May 30-June 4
Feng, Zhihong; Qi, Yundong; Lü, Zhendong; Zhou, Yugang; Lau, Kei May Conference paper
GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 3, 2004, p. 2257-2260
Chu, Chun San; Zhou, Yugang; Chu, Rongming; Chen, Kevin Jing; Lau, Kei May Conference paper
Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT
2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25 2004
Chu, Rongming; Zhou, Yugang; Liu, Jie; Chen, Kevin Jing; Lau, Kei May Conference paper
Thermal transfer of excess carriers from the GaN barrier to the InGaN quantum dots for efficient electroluminescence
AIP Conference Proceedings Volume 772, page 765 (2005), the 27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona, USA, 26-30 July 2004,
Yang, Chunlei; Liang, Hu; Yu, Lisheng; Qi, Yundong; Lau, Kei May; Wang, Jiannong; Fung, Kwok Kwong; Ge, Weikun Conference paper
Thermally activated carriers transfer process for the success of InGaN/GaN multi-quantum well light emitting devices
The 27th International Conference on the Physics of Semiconductors, Flagstaff, AZ, JUL 26-30, 2004, v. 772, 2005, p. 765-766
Yang, Chunlei; Liang, H.; Yu, L.S.; Qi, Yudong; Wang, Deliang; Lu, Z.D.; Lau, Kei May; Wang, Jiannong; Fung, Kwok Kwong; Ge, Weikun Conference paper

2003 5

Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures
Physica Status Solidi C, Vol. 0, (7), 2003, p. 2400-2403
Chu, Rongming; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
AlGaAs superlattice microcoolers
Applied physics letters, v. 83, (2), 2003, JUL 14, p. 374-376
Zhang, Jizhi; Anderson, Neal G.; Lau, Kei May Article
AlGaN/GaN/Graded-AlGaN double heterostructure HEMT
2003 Int. Conf. Solid-State Devices and Materials (SSDM2003), Tokyo, Japan, Sepetmber 16-18 2003, p. 918-919
Zhou, Y.G.; Chu, R.M.; Chen, K.J.; Lau, K.M. Conference paper
Comparison of temperature dependent electroluminescence of InGaN/GaN and AlGaInP based LEDs
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, 2003, p. 196-199
Liang, Hu; Yu, Lisheng; Qi, Yundong; Wang, Deliang; Lü, Zhendong; Tang, Wilson; Lau, Kei May; Yang, Chunlei; Wang, Jiannong; Ge, Weikun Conference paper
Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors
2003 Electronic Material Conference (EMC2003), Salt Lake City, Utah, USA, June 25-27 2003, p. 85
Chu, Rongming; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May Conference paper

2002 1

Charactersization of a novel GaAs-based microwave optical switch
Solid-State Electronics, v. 46, (10), October 2002, p. 1573-1577
Lau, Kei May; Wang, Hong; Zheng, H.Q.; Xiong, Y.Z.; Radhakrisnan, K. Article

2001 2

OMVPE growth of P-type GaN using solution Cp2Mg
Journal of Electronic Materials, v. 30, (11), 2001, NOV, p. 1382-1386
Qi, Yundong; Musante, Charles F.; Lau, Kei May; Smith, Lesley M.; Odedra, Rajesh; Kanjolia, Ravi K. Article
Study of Schottky barrier of Ni on p-GaN
Applied physics letters, v. 79, (27), 2001, DEC 31, p. 4536-4538
Yu, Lisheng; Qiao, Dongjiang; Jia, L.; Lau, SS; Qi, Yundong; Lau, Kei May Article

2000 3

Characteristic temperature study of GaAsP-AlGaAs tensile strained quantum well lasers
Journal of Applied Physics, v. 88, (9), 2000, p. 5400-5409
Tolliver, Todd R.; Anderson, Neal G.; Agahi, Farid; Lau, Kei May Article
Exciton dynamics and valence band mixing in tensile-strained semiconductor quantum wells
Semiconductor science and technology, v. 15, (2), 2000, p. 189-196
Pérez, Eduardo; Vi?a, Luis; Koteles, Emil S.; Lau, Kei May; Di Carlo, Aldo; Lugli, Paol Article
Intersubband absorption characteristics in OMVPE grown delta-doped GaAs/AlGAs multiple quantum well structures
Journal of Electronic Materials, v. 29, (2), 2000, p. 225-230
Lutz, Charles R.; Kanaley, Jason; Lau, Kei May Article

1997 2

Dependence of polarization mode and threshold current on tensile strain in AIGaAs/GaAsP quantum well lasers
Solid-state electronics, v. 41, (4), 1997, p. 647-649
Agahi, Farid; Baliga, Arvind; Lau, Kei May; Anderson, Neal G. Article
Monolithic integration of a 94 GHz AlGaAs/GaAs 2-DEG mixer on quartz substrate by epitaxial lift-off
IEEE Transactions on Electron Devices, v. 44, (1), January 1997, p. 11-16
Basco, Ricardo; Prabhu, Ajay; Sigfrid Yngvesson, K.; Lau, Kei May Article

1996 6

Exciton dynamics and spin relaxation in unstrained and tensile-strained quantum wells
Journal of the Optical Society of America. B, Optical physics, v. 13, (5), 1996, p. 994-999
Mu?oz, Leonardo G.; Pérez, Eduardo; Bellani, Vittorio; Zimmermann, Sven; Vi?a, Luis; Ploog, Klaus H.; Koteles, Emil S.; Lau, Kei May Article
Exciton dynamics and spin-flip in tensile strained quantum wells
Solid-state electronics, v. 40, (1-8), 1996, p. 737-740
Pérez, Eduardo; Bellani, Vittorio; Zimmermann, Sven; Mu?oz, Leonardo G.; Vi?a, Luis; Koteles, Emil S.; Lau, Kei May Article
Tensile strain and threshold currents in GaAsP-AlGaAs single-quantum-well lasers
IEEE journal of quantum electronics, v. 32, (1), 1996, p. 29-36
Baliga, Arvind; Agahi, Farid; Anderson, Neal G.; Lau, Kei May; Cadambi, Srihari Article
Tensile-strained barrier GaAsP/GaAs single quantum-well lasers
Applied physics letters, v. 68, (26), 1996, p. 3778-3780
Agahi, Farid; Baliga, Arvind; Lau, Kei May; Anderson, Neal G. Article
BALANCE - A flexible parallel load balancing system for heterogeneous computing systems and networks
IEEE INFOCOM '96 - FIFTEENTH ANNUAL JOINT CONFERENCE OF THE IEEE COMPUTER AND COMMUNICATIONS SOCIETIES: NETWORKING THE NEXT GENERATION, PROCEEDINGS VOLS 1-3, 1996, p. 896-903
Hui, Chi-Chung; Chanson, Samuel T.; Chui, Pui-Man; Lau, Kei May Conference paper
Temperature characteristics of GaAsP/AlGaAs tensile strained quantum well lasers
IEEE Lasers & Electro-Optics Society Annual Meeting (LEOS), v. 1, 1996, p. 312-313
Tolliver, Todd R.; Anderson, Neal G.; Agahi, Farid; Lau, Kei May Conference paper

1995 4

High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser diodes
IEEE photonics technology letters, v. 7, (2), 1995, p. 140-143
Agahi, Farid; Lau, Kei May; Choi, Hongkyun; Baliga, Arvind; Anderson, Neal G. Article
Resonant tunneling injection quantum-well lasers
IEEE photonics technology letters, v. 7, (6), 1995, p. 596-598
Lutz, Charles R.; Agahi, Farid; Lau, Kei May Article
Valence band offsets in strained GaAs1-xPx/GaAs heterojunctions
Journal of Electronic Materials, v. 24, (6), 1995, p. 713-717
Anderson, Neal G.; Agahi, Farid; Baliga, Arvind; Lau, Kei May Article
Monolithic integration of a 94GHz AlGaAs/GaAs 2DEG mixer on quartz substrate by epitaxial lift-off
Annual Device Research Conference Digest, 1995, p. 38-39
Basco, Ricardo; Prabhu, Ajay; Yngvesson, Sigfrid; Lau, Kei May Conference paper

1994 6

Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures
Journal of Electronic Materials, v. 23, (7), 1994, p. 649-652
Hanson, Cynthia M.; Basco, Ricardo; Agahi, Farid; Lau, Kei May; Lareau, Richard T.; Monahan, Timothy P. Article
GaAs1-xPx/GaAs quantum-well structures with tensile-strained barriers
IEEE journal of quantum electronics, v. 30, (2), 1994, p. 459-465
Agahi, Farid; Lau, Kei May; Baliga, Arvind; Anderson, Neal G. Article
Improvement of gas-switching abruptness for atmospheric pressure organometallic vapor phase epitaxy
Journal of Crystal Growth, v. 139, (3-4), 1994, p. 344-350
Agahi, Farid; Lutz, Charles R.; Lau, Kei May Article
Magneto-optical Properties of biaxially Strained Quanmm Wells
Philosophical Magazine B, v. 70, (3), 1994, p. 397-408
Vi?a, Luis; Mu?oz, Leonardo G.; Mestres, N.; Koteles, Emil S.; Bertolet, Daniel C.; Lau, Kei May Article
Enhanced stimulated emission of excited states in quantum wells by resonant tunneling
IEEE LEOS Annual Meeting - Proceedings, v. 2, 1994, p. 387-388
Lutz Jr, Charles R.; Agahi, Farid; Lau, Kei May Conference paper
Tensile-strained AlGaAs/GaAsP single quantum-well lasers
IEEE LEOS Annual Meeting - Proceedings, v. 1, 1994, p. 109-110
Agahi, Farid; Baliga, Arvind; Lau, Kei May; Choi, Hong K.; Anderson, Neal Conference paper

1993 8

Analysis of slow-wave transmission lines on multi-layered semiconductor structures including conductor loss
IEEE transactions on microwave theory and techniques, v. 41, (5), 1993, p. 824-829
Liou, Jenn-Chorng; Lau, Kei May Article
Comparison of electroabsorption in tensile-strained and lattice-matched GaAs(P)/AlGaAs quantum wells
Applied physics letters, v. 63, (26), 1993, p. 3616-3618
Gomatam, Badri N.; Anderson, Neal G.; Agahi, Farid; Musante, Charles F.; Lau, Kei May Article
Field-induced absorption edge merging in tensile strained GaAsP quantum wells
Applied physics letters, v. 62, (26), 1993, p. 3473-3475
Gomatam, Badri N.; Anderson, Neal G.; Agahi, Farid; Musante, Charles F.; Lau, Kei May Article
Focal Plane Arrays for Submillimeter Waves Using Two-Dimensional Electron Gas Elements
Remote Sensing Reviews, v. 8, 1993, p. 29
Yang, Jian-Xung; Lau, Kei May; Yngvesson, Sigfrid K. Article
High-quality two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures by LP-OMVPE
IEEE Transactions on Electron Devices, v. 40, (3), March 1993, p. 502-506
Agahi, Farid; Yang, Jian-Xun; Lau, Kei May; Yngvesson, Karl Sigfrid Article
Ultrahigh mobility two-dimensional electron gas in AlxGa 1-xAs/GaAs heterostructures by organometallic vapor phase epitaxy
Applied physics letters, v. 63, (14), 1993, p. 1960-1962
Basco, Ricardo; Agahi, Farid; Lau, Kei May Article
Valence-band-shape modification due to band coupling in strained quantum wells
Physical Review B, v. 47, (20), May 1993, p. 13926-13929
Vi?a, Luis; Mu?oz, Leonardo G.; Mestres, N.; Koteles, Emil S.; Ghiti, Ali; O'Reilly, Eoin P.O.; Bertolet, Daniel C.; Lau, Kei May Article
Wide-bandwidth electron bolometric mixers: a 2DEG prototype and potential for low-noise THz receivers
IEEE transactions on microwave theory and techniques, v. 41, (4), April 1993, p. 581-589
Yang, Jian-Xung; Agahi, Farid; Dai, Dong; Musante, Charles F.; Grammer, Wes; Lau, Kei May; Yngvesson, K. Sigfrid Article

1992 5

Exciton Trapping in Strained GaAsP Quantum Wells
Semiconductor Science and Technology, v. 7, 1992, p. 170-172
Takiguchi, Yoshihiro; Shum, Kai; Alfano, Robert R.; Koteles, Emil S.; Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May Article
Magneto-optical properties of quantum wells under biaxial tensile strain
Surface science, v. 267, (1-3), 1992, p. 533-536
Vi?a, Luis; Mu?oz, Leonardo G.; Mestres, N.; Koteles, Emil S.; Bertolet, Daniel C.; Lau, Kei May Article
Optically pumped submillimeter wave semiconductor lasers
IEEE journal of quantum electronics, v. 28, (8), 1992, p. 1773-1777
Lau, Kei May; Xu, Wei Article
Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium
Journal of Electronic Materials, v. 21, (10), 1992, p. 947-953
Landini, Barabara E.; Agahi, Farid; Lau, Kei May Article
2DEG electron bolometric mixers: new results and potential for low-noise THz receivers
Proceedings of SPIE--the international society for optical engineering, v. 1929, 1992, p. 208-209
Yang, J.X.; Agahi, F.; Dai, D.; Musante, C.; Grammer, W.; Lau, K.M.; Yngvesson, K.S. Conference paper

1991 2

Effects of growth interruption on the optical properties of AIGaAs/GaAs and GaAs/InGaAs quantum wells grown by atmospheric pressure organometallic chemical vapor deposition
Journal of Electronic Materials, v. 20, (2), 1991, p. 197-201
Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May; Koteles, Emil S. Article
Patterned substrate epitaxy surface shapes
Journal of Crystal Growth, v. 108, (1-2), 1991, p. 73-88
Jones, Stephen H.; Seidel, Lisa K.; Lau, Kei May; Harold, Michael P. Article

1990 3

Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition
Journal of Electronic Materials, v. 19, (9), 1990, p. 967-974
Bertolet, Daniel C.; Hsu, JungKuei; Agahi, Farid; Lau, Kei May Article
Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells
Surface science, v. 228, (1-3), 1990, p. 314-317
Koteles, Emil S.; Owens, Douglas A.; Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May Article
Solution to characteristics of planar transmission lines made of finite-thickness metal on multi-layer media
IEEE MTT-S International Microwave Symposium digest, v. 1, 1990, p. 179-182
Liou, Jennchorng; Lau, Kei May Article

1989 1

Insitu Surface Cleaning and Selective Oxidation in OMCVD Systems
15th International Symp on Gallium Arsenide And Related Compounds, Atlanta, US, 11-14 Sep 1988
Jones, Stephen H.; Lau, Kei May; Pouch, John J. Conference paper

1988 9

Effects of polyimide passivation on the photoluminescence of high-purity epitaxial GaAs
Journal of applied physics, v. 63, (3), 1988, p. 962-964
Hsu, JungKuei; Lau, Kei May Article
Exciton photoluminescence linewidths in very narrow AlGaAs/GaAs and GaAs/InGaAs quantum wells
Journal of applied physics, v. 64, (11), 1988, p. 6562-6564
Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May; Koteles, Emil S.; Owens, Douglas A. Article
In situ thermal oxidation for surface cleaning and mask generation prior to selective area epitaxy
Applied physics letters, v. 53, (21), 1988, p. 2068-2070
Jones, Stephen H.; Lau, Kei May Article
Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor deposition
Applied physics letters, v. 52, (4), 1988, p. 293-295
Bertolet, Daniel C.; Hsu, JungKuei; Jones, Stephen H.; Lau, Kei May Article
Saturation of light- and heavy-hole exciton energies in very narrow quantum wells
Physical Review B, v. 38, (14), November 1988
Koteles, Emil S.; Owens, Douglas A.; Bertolet, Daniel C.; Lau, Kei May Article
Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition
Applied physics letters, v. 53, (25), 1988, p. 2501-2503
Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May Article
Temperature Dependence and Persistent Conductivity of GaAs MESFET's with Superlattice Buffers
IEEE Transactions on Electron Devices, v. 35, (1), January 1988, p. 14-17
Liou, Jenn-Chorng; Lau, Kei May Article
Temperature stability of AlxGa1-xAs (0≤x≤1) thermal oxide masks for selective-area epitaxy
Journal of applied physics, v. 64, (2), 1988, p. 922-925
Jones, Stephen H.; Lau, Kei May; Pouch, John J. Article
Nondestructive Characterization Of MOCVD-Grown GaInAs/GaAs Using Rocking Curve And Topography
Proceedings of SPIE - The International Society for Optical Engineering, v. 877, May 1988, p. 41-51
Wie, Chu R.; Kim, H.M.; Lau, Kei May Conference paper

1987 5

AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor deposition
Journal of applied physics, v. 62, (1), 1987, p. 120-125
Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May Article
Mobility Profiling of GaAs Power FET's by Magnetotransconjuctance Measurements
IEEE Transactions on Electron Devices, v. 34, (4), April 1987, p. 920-925
Lau, Kei May; Liou, Jenn-Chorng Article
Photoluminescence characteristics of selectively grown GaAs and AlGaAs/GaAs quantum wells
Journal of applied physics, v. 62, (6), 1987, p. 2466-2469
Lau, Kei May; Jones, Stephen H.; Hsu, JungKuei; Bertolet, Daniel C. Article
SELECTIVE AREA GROWTH OF HIGH QUALITY GaAs BY OMCVD USING NATIVE OXIDE MASKS.
Journal of the Electrochemical Society, v. 134, (12), 1987, p. 3149-3155
Jones, Stephen H.; Lau, Kei May Article
Slow relaxation and electric field quenching of persistent conductivity in GaAs metal-semiconductor field-effect transistors with different buffer layer structures
Applied physics letters, v. 51, (24), 1987, p. 2010-2012
Liou, Jennchorng; Lau, Kei May Article

1986 3

A new analytical technique of photoluminescence for optimization of organometallic chemical vapor deposition
Journal of applied physics, v. 60, (10), 1986, p. 3781-3784
Hsu, JungKuei; Jones, Stephen H.; Lau, Kei May Article
IVA-3 Parasitic Corrections for Mobility Profiling of Large-Periphery GaAs Power FET's
IEEE Transactions on Electron Devices, v. 33, (11), November 1986, p. 1850-1851
Lau, Kei May; Liou, Jennchorng Article
ROOM LIGHT: THE GREMLIN CLOUDING AMPLIFIER TESTS.
Microwaves & RF, v. 25, (10), 1986, p. 75-77
Liou, Jenn-Chorng; Lau, Kei May Article

1985 1

RELATIONSHIP OF MAGNETOTRANSCONDUCTANCE MOBILITY PROFILES AND RF PERFORMANCE OF GAAS FETS.
IEEE MTT-S International Microwave Symposium digest, 1985, p. 204-206
Chan, S.K.; Lau, Kei May; White, Paul M. Conference paper

1984 1

Uniform Deposition of GaAs in a Multiwafer Vapor-Phase Epitaxial System
IEEE Transactions on Electron Devices, v. 31, (8), August 1984, p. 1086-1089
Lau, Kei May; Dat, Rovindra Article

1983 1

FIR Photoconductivity in Epitaxial InP
Infrared Physics, v. 23, 1983, p. 311
Lau, Kei May; Wilson, William L. Article

1979 1

Screw-fastened Joints for Thermal Contact at Low Temperatures
Rev. Sci. Instrum., v. 50, 1979, p. 254
Lau, Kei May; Zimmermann, William Jr Article


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Article 15

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current
IEEE Transactions on Electron Devices, v. 68, (2), February 2021, article number 9303380, p. 653-657
Jiang, Huaxing; Lyu, Qifeng; Zhu, Renqiang; Xiang, Peng; Cheng, Kai; Lau, Kei May
848 ppi high-brightness active-matrix micro-LED micro-display using GaN-on-Si epi-wafers towards mass production
Optics Express, v. 29, (7), March 2021, p. 10580-10591
Qi, Longheng; Zhang, Xu; Chong, Wing Cheung; Li, Peian; Lau, Kei May
A Monolithic InP/SOI Platform for Integrated Photonics
Light: Science & Applications, v. 10, (1), September 2021, article number 200
Yan, Zhao; Han, Yu; Lin, Liying; Xue, Ying; Ma, Chao; Ng, Wai Kit; Wong, Kam Sing; Lau, Kei May
Ambipolar photocarrier doping and transport in monolayer WS2 by forming a graphene/WS2/quantum dots heterostructure
IEEE Electron Device Letters, v. 42, (3), March 2021, article number 9321548, p. 371-374
Cheng, Guanghui; Li, Baikui; Zhao, Chunyu; Jin, Zijing; Lau, Kei May; Wang, Jiannong
C and L band room-temperature continuous-wave InP-based microdisk lasers grown on silicon
Optics Letters, v. 46, (12), June 2021, p. 2836-2839
Lin, Liying; Xue, Ying; Li, Jie; Luo, Wei; Huang, Jie; Lau, Kei May
Controlled single-mode emission in quantum dot micro-lasers
Optics Express, v. 29, (9), April 2021, p. 13193-13203
Zhu, Si; Ma, Xiang; Liu, Can; Luo, Wei; Liu, Jia; Shi, Bei; Guo, Weihua; Lau, Kei May
Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETs
IEEE Electron Device Letters, v. 42, (7), July 2021, article number 9431174, p. 970-973
Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May
GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates
Optics Express, v. 29, (7), March 2021, p. 11268-11276
Monge-Bartolome, Laura; Shi, Bei; Lai, Billy; Boissier, Guilhem; Cerutti, Laurent; Rodriguez, Jean-Baptiste; Lau, Kei May; Tournie, Eric
High-Performance III-V Photodetectors On A Monolithic InP/SOI Platform
Optica, v. 8, (9), 14 September 2021, p. 1204-1209
Xue, Ying; Han, Yu; Tong, Yeyu; Yan, Zhao; Wang, Yi; Zhang, Zunyue; Tsang, Hon Ki; Lau, Kei May
Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform
Optics Express, v. 29, (6), March 2021, p. 8358-8364
Lyu, Qifeng; Jiang, Huaxing; Lau, Kei May
Monolithic Thin Film Red LED Active-matrix Micro-display by Flip-chip Technology
IEEE Photonics Technology Letters, v. 33, (12), June 2021, article number 9425528, p. 603-606
Li, Peian; Zhang, Xu; Chong, Wing Cheung; Lau, Kei May
Optical gain and absorption of 1.55?μm InAs quantum dash lasers on silicon substrate
Applied Physics Letters, v. 118, (13), March 2021, article number 131101
Li, Zhibo; Shutts, Samuel; Xue, Ying; Luo, Wei; Lau, Kei May; Smowton, Peter M.
Red-emitting InP quantum dot micro-disk lasers epitaxially grown on (001) silicon
Optics Letters, v. 46, (18), September 2021, p. 4514-4517
Luo, Wei; Lin, Liying; Huang, Jie; Han, Yu; Lau, Kei May
Telecom InP-based quantum dash photodetectors grown on Si
Applied Physics Letters, v. 118, (14), April 2021, article number 141101
Xue, Ying; Wang, YI; Luo, Wei; Huang, Jie; Lin, Liying; Tsang, Hon Ki; Lau, Kei May
Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors
Semiconductor Science and Technology, v. 36, (3), March 2021, article number 034001
Jiang, Huaxing; Zhu, Renqiang; Lyu, Qifeng; Tang, Chak Wah; Lau, Kei May

Conference paper 3

40 G III-V photodetectors on a monolithic InP/SOI platform
OSA Technical Digest / Optical Society of America. USA : Optical Society of America, 2021, Paper SW2C.2
Xue, Ying; Han, Yu; Tong, Yeyu; Yan, Zhao; Wang, Yi; Tsang, Hon Ki; Lau, Kei May
Gain switching of 1.55 μm QDash Lasers directly grown on Silicon
2021 IEEE Photonics Conference (IPC), Vancouver, Canada, 18-21 October 2021
Lin, Qi; Xue, Ying; Luo, Wei; Huang, Jie; Lin, Liying; Lau, Kei May
Optical crosstalk reduction in GaN-on-Si micro-LED display
Proceedings of the International Display Workshops, v. 27, 2021, p. 202-204
Qi, Longheng; Zhang, Xu; Li, Peian; Lau, Kei May


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Article 27

1.55 μm Electrically Pumped Continuous Wave Lasing of Quantum Dash Lasers Grown on Silicon
Optics Express, v. 28, (12), June 2020, p. 18172-18179
Xue, Ying; Luo, Wei; Zhu, Si; Lin, Liying; Shi, Bei; Lau, Kei May
1-kV Sputtered p-NiO/n-Ga₂O₃ Heterojunction Diodes with an Ultra-Low Leakage Current below 1 μ A/cm²
IEEE Electron Device Letters, v. 41, (3), March 2020, article number 8962247, p. 449-452
Lu, Xing; Zhou, Xianda; Jiang, Huaxing; Ng, Kar Wei; Chen, Zimin; Pei, Yanli; Lau, Kei May; Wang, Gang
Active matrix monolithic micro-LED full-color micro-display
Journal of the Society for Information Display, 24 August 2020
Zhang, Xu; Qi, Longheng; Chong, Wing Cheung; Li, Peian; Tang, Chak Wah; Lau, Kei May
Bufferless 1.5 μm III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms
Optica, v. 7, (2), February 2020, article number 1900497, p. 148-153
Han, Yu; Yan, Zhao; Ng, Wai Kit; Xue, Ying; Wong, Kam Sing; Lau, Kei May
Bufferless III -V photodetectors directly grown on (001) silicon-on-insulators
Optics Letters, v. 45, (7), April 2020, p. 1754-1757
Xue, Ying; Han, Yu; Wang, Yi; Zhang, Zunyue; Tsang, Hon Ki; Lau, Kei May
Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K
IEEE Journal of the Electron Devices Society, v. 8, 3 August 2020, article number 9154408, p. 850-856
Wang, Yangqian; Gu, Yitian; Lu, Xing; Jiang, Huaxing; Guo, Haowen; Chen, Baile; Lau, Kei May; Zou, Xinbo
Comparison of growth structures for continuous-wave electrically pumped 1.55 μm quantum dash lasers grown on (001) Si
Photonics Research, v. 8, (12), December 2020, p. 1888-1894
Luo, Wei; Xue, Ying; Huang, Jie; Lin, Liying; Shi, Bei; Lau, Kei May
Comparison of static and dynamic characteristics of 1550 nm quantum dash and quantum well lasers
Optics Express, v. 28, (18), 31 August 2020, p. 26823-26835
Shi, Bei; Pinna, Sergio; Luo, Wei; Zhao, Hongwei; Zhu, Si; Brunelli, Simone T. Suran; Lau, Kei May; Klamkin, Jonathan
Comparison of the AlN and GaN crystalline quality on 2-inch silicon substrate via two growth methods
Journal of Crystal Growth, v. 535, April 2020, article number 125545
Li, Yangfeng; Tang, Chak Wah; Lau, Kei May
Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates
IEEE Transactions on Electron Devices, v. 67, (10), October 2020, article number 9165180, p. 3992-3998
Zhang, Yuliang; Zhang, Xu; Zhu, Min; Chen, Jiaxiang; Tang, Chak Wah; Lau, Kei May; Zou, Xinbo
GaN Single Nanowire p-i-n Diode for High-Temperature Operations
ACS Applied Electronic Materials, v. 2, (3), March 2020, p. 719-724
Zou, Xinbo; Zhang, Xu; Zhang, Yu; Lyu, Qifeng; Tang, Chak Wah; Lau, Kei May
High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si
Applied Physics Letters, v. 117, (7), 17 August 2020, article number 071101
Lyu, Qifeng; Jiang, Huaxing; Lau, Kei May
III-V lasers selectively grown on (001) silicon
Journal of Applied Physics, v. 128, (20), November 2020, article number 200901
Han, Yu; Lau, Kei May
III–V micro- and nano-lasers deposited on amorphous SiO₂
Applied Physics Letters, v. 116, (17), April 2020
Han, Yu; Yan, Zhao; Ng, Wai Kit; Xue, Ying; Ng, Kai Wei; Wong, Kam Sing; Lau, Kei May
InAs Nano-Ridges and Thin Films Grown on (001) Silicon Substrates
Journal of Applied Physics, v. 128, (3), 16 July 2020, article number 035302
Yan, Zhao; Han, Yu; Lau, Kei May
InGaN quantum dots with short exciton lifetimes grown on polar c-plane by metal-organic chemical vapor deposition
Materials Research Express, v. 7, (11), November 2020, article number 115903
Zhao, Chunyu; Tang, Chak Wah; Cheng, Guanghui; Wang, Jiannong; Lau, Kei May
Leakage Current Reduction in beta-Ga₂O₃ Schottky Barrier Diodes by CF₄ Plasma Treatment
IEEE Electron Device Letters, v. 41, (9), September 2020, article number 9154753, p. 1312-1315
Luo, Haoxun; Jiang, Huaxing; Chen, Zimin; Pei, Yanli; Feng, Qian; Zhou, Hong; Lu, Xing; Lau, Kei May; Wang, Gang
Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si
ACS Photonics, v. 7 , (2), February 2020, p. 528-533
Chen, Baile; Wan, Yating; Xie, Zhiyang; Huang, Jian; Zhang, Ningtao; Shang, Chen; Norman, Justin; Li, Qiang; Yeyu, Tong; Lau, Kei May; Gossard, Arthur C.; Bowers, John E.
Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si
IEEE Journal of Selected Topics in Quantum Electronics, v. 26, (2), March 2020
Wan, Yating; Shang, Chen; Norman, Justin; Shi, Bei; Li, Qiang; Collins, Noelle; Dumont, Mario; Lau, Kei May; Gossard, Arthur C.; Bowers, John E.
Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the "green gap"
Photonics Research, v. 8, (5), May 2020, p. 750-754
Zhao, Chunyu; Tang, Chak Wah; Lai, Billy; Cheng, Guanghui; Wang, Jiannong; Lau, Kei May
Micrometer-scale InP selectively grown on SOI for fully integrated Si-photonics
Applied Physics Letters, v. 117, (5), 4 August 2020, article number 052102
Han, Yu; Yan, Zhao; Xue, Ying; Lau, Kei May
MOCVD growth of InP-based 1.3?μm quantum dash lasers on (001) Si
Applied Physics Letters, v. 116, (14), April 2020, article number 142106
Luo, Wei; Xue, Ying; Shi, Bei; Zhu, Si; Dong, Xu; Lau, Kei May
Monolithic full-color microdisplay using patterned quantum dot photoresist on dual-wavelength LED epilayers
Journal of the Society for Information Display, 10 September 2020
Li, Peian; Zhang, Xu; Li, Yangfeng; Qi, Longheng; Tang, CHAK WAH; Lau, Kei May
Multi-Heterojunction InAs/GaSb Nano-Ridges Directly Grown on (001) Si
Nanotechnology, v. 31, (34), June 2020
Yan, Zhao; Han, Yu; Lau, Kei May
Selective lateral photoelectrochemical wet etching of InGaN nanorods
Journal of Vacuum Science and Technology B, v. 38, (6), November 2020, article number 060602
Zhao, Chunyu; Zhang, Xu; Tang, Chak Wah; Wang, Jiannong; Lau, Kei May
Selectively grown III-V lasers for integrated Si-photonics
Journal of Lightwave Technology, v. 39, (4), 15 February 2021, article number 9273209, p. 940-948
Han, Yu; Xue, Ying; Yan, Zhao; Lau, Kei May
Ultra-Low Threshold Green InGaN Quantum Dot Microdisk Lasers Grown on Silicon
Applied Physics Letters, v. 117, (3), July 2020, article number 0012045
Zhao, Chunyu; Tang, Chak Wah; Wang, Jiannong; Lau, Kei May

Conference paper 9

1.55 μm Quantum Dash CW Lasers on Planar (001) Si
2020 IEEE Photonics Conference, IPC 2020 - Proceedings, September 2020, article number 9252290
Luo, Wei; Xue, Ying; Huang, Jie; Lin, Liying; Shi, Bei; Lau, Kei May
1.6 μm continuous-wave lasing from InAs/AlGaInAs quantum dash micro-disk lasers grown on (001) silicon
2020 IEEE Photonics Conference, IPC 2020 - Proceedings, September 2020, article number 9252532
Lin, Liying; Luo, Wei; Zhu, Si; Lau, Kei May
Comparison of Dynamic Characteristics of Quantum Dash and Quantum Well Lasers on InP
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, v. 2020-May, May 2020, article number 9193694
Shi, Bei; Pinna, Sergio; Luo, Wei; Zhao, Hongwei; Zhu, Si; Brunelli, Simone Suran; Lau, Kei May; Klamkin, Jonathan S.
Electrically pumped CW Lasing of 1.5 μm QDash lasers grown on (001) Si
2020 IEEE Photonics Conference, IPC 2020 - Proceedings, September 2020, article number 9252311
Xue, Ying; Luo, Wei; Zhu, Si; Lin, Liying; Shi, Bei; Lau, Kei May
High-resolution monolithic micro-led full-color micro-display
Digest of Technical Papers - SID International Symposium, v. 51, (1), 2020, article number 23-5, p. 339-342, Book 1: Session 23: MicroLED Display Systems
Zhang, Xu; Qi, Longheng; Chong, Wing Cheung; Li, Peian; Lau, Kei May
III-V Micro- and Nano-Lasers Grown on Silicon Emitting in the Telecom Band
2020 Optical Fiber Communications Conference and Exhibition, OFC 2020 - Proceedings, March 2020, article number 9083341
Lau, Kei May; Han, Yu; Zhu, Si; Luo, Wei; Xui, Ying
InP-based Lasers Grown on 220 nm SOI by Lateral/vertical Aspect Ratio Trapping
2020 IEEE Photonics Conference, IPC 2020 - Proceedings, September 2020, article number 9252256
Han, Yu; Yan, Zhao; Ng, Wai Kit; Xue, Ying; Wong, Kam Sing; Lau, Kei May
Quantum Dot Avalanche Photodetector on Si Substrate
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, v. 2020-May, 1 May 2020, article number 9192764
Chen, Baile; Wan, Yating; Xie, Zhiyang; Huang, Jian; Shang, Chen; Norman, Justin; Li, Qiang; Lau, Kei May; Gossard, Arthur C.; Bowers, John E.
Self-generated chaos in a free-running Fabry-Perot quantum dot laser
2020 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), August 2020, article number 9255833
Zhou, Yue-Guang; Zhu, Si; Lau, Kei May; Wang, Cheng


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Article 15

1.55-μm Lasers Epitaxially Grown on Silicon
IEEE Journal of Selected Topics in Quantum Electronics, v. 25, (6), November 2019, article number 1900711
Shi, Bei; Han, Yu; Li, Qiang; Lau, Kei May
Active Matrix Monolithic LED Micro-Display Using GaN-on-Si Epilayers
IEEE Photonics Technology Letters, v. 31, (11), June 2019, article number 8688508, p. 865-868
Zhang, Xu; Li, Peian; Zou, Xinbo; Jiang, Junmin; Yuen, Shinghin; Tang, Chakwah; Lau, Kei May
Broadband telecom emission from InP/InGaAs nano-ridge lasers on silicon-on-insulator substrate
OSA Continuum, v. 2, (11), November 2019, p. 3037-3043
Ng, Wai Kit; Han, Yu; Lau, Kei May; Wong, Kam Sing
Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate
ACS Photonics, v. 6, (5), May 2019, p. 1100-1105
Huang, Jian; Wan, Yating; Jung, Daehwan; Norman, Justin C.; Shang, Chen; Li, Qiang; Lau, Kei May; Gossard, Arthur C.V.; Bowers, John E.; Chen, Baile
Electrically pumped 1.5 μm InP-based quantum dot microring lasers directly grown on (001) Si
Optics Letters, v. 44, (18), September 2019, p. 4566-4569
Zhu, Si; Shi, Bei; Lau, Kei May
Exciton Aggregation Induced Photoluminescence Enhancement of Monolayer WS₂
Applied Physics Letters, v. 114, (23), June 2019, article number 232101
Cheng, Guanghui; Li, Baikui; Zhao, Chunyu; Jin, Zijing; Li, Hui; Lau, Kei May; Wang, Jiannong
High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown
IEEE Electron Device Letters, v. 40, (4), April 2019, article number 8635538, p. 530-533
Jiang, Huaxing; Zhu, Renqiang; Lyu, Qifeng; Lau, Kei May
III–V Superlattices on InP/Si Metamorphic Buffer Layers for λ≈4.8 μm Quantum Cascade Lasers
Physica Status Solidi (A) Applications and Materials Science, v. 216, (1), January 2019, article number 1800493
Rajeev, Ayushi; Shi, Bei; Li, Qiang; Kirch, Jeremy Daniel; Cheng, Micah; Tan, Aaron; Kim, Honghyuk; Oresick, Kevin M.; Sigler, Chris; Lau, Kei May; Kuech, Thomas F.; Mawst, Luke James
Low-Threshold Epitaxially Grown 1.3-μm InAs Quantum Dot Lasers on Patterned (001) Si
IEEE Journal of Selected Topics in Quantum Electronics, v. 25, (6), November 2019, article number 1502207
Shang, Chen; Wang, Yating; Norman, Justin C.; Collins, Noelle; MacFarlane, Ian; Dumont, Mario; Liu, Songtao; Li, Qiang; Lau, Kei May; Gossard, Arthur C.; Bowers, John E.
Room Temperature III–V Nanolasers With Distributed Bragg Reflectors Epitaxially Grown on (001) Silicon-on-insulators
Photonics Research, v. 7, (9), September 2019, p. 1081-1086
Han, Yu; Ng, Wai Kit; Xue, Ying; Wong, Kam Sing; Lau, Kei May
Selective Lateral Epitaxy of Dislocation-free InP on Silicon-on-insulator
Applied Physics Letters, v. 114, (19), May 2019, article number 192105
Han, Yu; Xue, Ying; Lau, Kei May
Self-Powered Fast-Response X-Ray Detectors Based on Vertical GaN p-n Diodes
IEEE Electron Device Letters, v. 40, (7), July 2019, article number 8705386, p. 1044-1047
Zhou, Leidang; Lu, Xing; Wu, Jin; Jiang, Huaxing; Chen, Liang; Ouyang, Xiaoping; Lau, Kei May
Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time
Materials Research Express, v. 7, (1), December 2019, article number 015903
Li, Yangfeng; Jin, Zijing; Han, Yu; Zhao, Chunyu; Huang, Jie; Tang, Chak Wah; Wang, Jiannong; Lau, Kei May
Telecom InP/InGaAs Nanolaser Array Directly Grown on (001) Silicon-on-insulator
Optics Letters, v. 44, (4), February 2019, p. 767-770
Han, Yu; Ng, Wai Kit; Xue, Ying; Li, Qiang; Wong, Kam Sing; Lau, Kei May
Vertical β-Ga₂O₃ Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance
Physica Status Solidi (A) Applications and Materials Science, 2019, article number 1900497
Lu, Xing; Zhang, Xu; Jiang, Huaxing; Zou, Xinbo; Lau, Kei May; Wang, Gang

Book chapter 1

Growth of III-V semiconductors and lasers on silicon substrates by MOCVD
Future Directions in Silicon Photonics / Edited by Sebastian Lourdudoss, John E. Bowers, Chennupati Jagadish. Cambridge, US : Elsevier/Academic Press, 2019, p. 229-282, Book series: Semiconductors and Semimetals, v. 101
Shi, Bei; Lau, Kei May

Conference paper 21

Active Matrix Monolithic Full-Color LED Micro Display
The 26th International Display Workshops (IDW'19), Sapporo, Japan, 27-29 November 2019
Qi, Longheng; Zhang, Xu; Chong, Wing Cheung; Li, Peian; Tang, Chak Wah; Lau, Kei May
Active matrix monolithic full-color LED micro-display
Proceedings of the International Display Workshops, v. 2, 2019, p. 433-435
Qi, Longheng; Zhang, Xu; Chong, Wing Cheung; Li, Peian; Tang, Chak Wah; Lau, Kei May
Characteristics of 1.3μm Electrically Pumped InAs/AlGaInAs Quantum Dot Lasers on (001) Silicon
Proceedings of 2019 IEEE Photonics Conference, IPC 2019, September 2019, article number 8908316
Xue, Ying; Wu, Xinru; Luo, Wei; Zhu, Si; Tsang, Hon Ki; Lau, Kei May
Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate
2019 Device Research Conference, DRC 2019 / IEEE. Piscataway, NJ : IEEE, 2019, p. 165-166
Huang, Jian; Wan, Yating; Jung, Daehwan; Norman, Justin; Shang, Chen; Li, Qiang; Lau, Kei May; Gossard, Arthur C; Bowers, John E.; Chen, Baile
Electrically Injected 1.64 μm-emitting In_0.65Ga_0.35As 3-QW Laser Diodes Grown on Mismatched Substrates by MOVPE
2019 Compound Semiconductor Week (CSW), 2019
Kim, Honghyuk; Shi, Bei; Li, Qiang; Rajeev, Ayushi; Lau, Kei May; Kuech, Thomas F.; Mawst, Luke J.
High Responsivity and Low Dark Current Ultraviolet Photodetectors Using p-GaN/AlGaN/GaN Heterostructure
2019 Compound Semiconductor Week, CSW 2019 - Proceedings, May 2019, article number 8819330
Lyu, Qifeng; Jiang, Huaxing; Lu, Xing; Lau, Kei May
III-V Lasers and Integrated Components Directly Grown on Silicon: Options for Integration
2019 Device Research Conference, DRC 2019 / IEEE. Piscataway, NJ : IEEE, 2019, p. 69-70
Lau, Kei May
III-V lasers emitting at 1.3 to 1.5 μm grown on (001) silicon by MOCVD (invited)
2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings, 2019, article number 8749587
Han, Yu; Zhu, Si; Shi, Bei; Li, Qiang; Lau, Kei May
III-V Lasers Emitting at 1.3 to 1.5 \mu \mathrm{m} Grown on (001) Silicon by MOCVD (Invited)
2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings, 8749587, May 2019
Han, Yu; Zhu, Si; Shi, Bei; Li, Qiang; Lau, Kei May
Integrated electrically-pumped quantum-dot micro-lasers with tunable single-mode operation
IET Conference Publications, v. 2019, (CP765), 2019
Zhu, Si; Ma, Xiang; Luo, Wei; Shi, Bei; Guo, Weihua; Lau, Kei May
Mechanism of wavelength tuning over 200 nm range from InP/InGaAs nano-lasers grown on SOI
2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019, v. Part F140-CLEO_Europe 2019, June 2019, article number 8873205
Ng, Wai Kit; Han, Yu; Lau, Kei May; Wong, Kam Sing
Micro-LED displays: Can the monolithic approach produce full-color?
Digest of Technical Papers - SID International Symposium, v. 50, (1), May 2019, p. 20-21, Book 1: Session 4: MicroLED and Color Converting Technology
Lau, Kei May
Monolithic Full-color LED Micro-display Using Dual Wavelength LED Epilayers
Proceedings of the International Display Workshops, v. 2, 2019, p. 770-773
Li, Peian; Zhang, Xu; Li, Yangfeng; Qi, Longheng; Tang, Chak Wah; Lau, Kei May
Monolithic Growth of InAs Quantum Dots Lasers on (001) Silicon Emitting at 1.55 μm
Proceedings of 2019 IEEE Photonics Conference, IPC 2019, September 2019, article number 8908479
Li, Zhibo; Shutts, Samuel; Allford, Craig P.; Shi, Bei; Luo, Wei; Lau, Kei May; Smowton, Peter M.
Monolithic micro-LED full-color micro-displays
Proceedings of the International Display Workshops, v. 1, 2019, p. 6-8
Lau, Kei May; Zhang, Xu
Monolithic μ-LED Full-Color Micro-Displays
Proceedings of 2019 IEEE Photonics Conference, IPC 2019, September 2019
Lau, Kei May
Multi-heterojunction InAs/GaSb nano-ridges directly grown on (001) Si
International Nano-Optoelectronics Workshop (iNOW), Guangzhou, China, 20 - 26 July 2019
Yan, Zhao; Han, Yu; Lau, Kei May
Room-Temperature Electrically Pumped InP-based 1.3μm Quantum Dot Laser on On-axis (001) Silicon
Compound Semiconductor Week (CSW 2019) , Nara, Japan, 19-23 May 2019
Luo, Wei; Xue, Ying; Shi, Bei; Zhu, Si; Lau, Kei May
Telecom III-V Nano-Lasers with Distributed Bragg Reflectors Grown on (001) Silicon-on-Insulators
roceedings of 2019 IEEE Photonics Conference, IPC 2019, September 2019, article number 8908501
Han, Yu; Ng, Wai Kit; Xue, Ying; Wong, Kam Sing; Lau, Kei May
Triple Reduction of Threshold Current for 1.3μm in as Quantum Dot Lasers on Patterned, On-axis (001) Si
2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings, May 2019, article number 8750447
Shang, Chen; Wan, Yating; Norman, Justin C.; Jung, Daehwan; Li, Qiang; Lau, Kei May; Gossard, Arthur C.V.; Bowers, John E.
Vertical Schottky Barrier Diodes Based on a Bulk β-Ga₂O₃ Substrate With High Switching Performance
2019 Compound Semiconductor Week (CSW), 2019
Lu, Xing; Zhang, Xu; Jiang, Huaxing; Zou, Xinbo; Lau, Kei May


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Article 17

1.5 μm Quantum-dot diode lasers directly grown on CMOS-standard (001) silicon
Applied Physics Letters, v. 113, (22), November 2018, article number 221103
Zhu, Si; Shi, Bei; Li, Qiang; Lau, Kei May
A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect Transistor
IEEE Electron Device Letters, v. 39, (3), March 2018, p. 394-396
Ren, Jie; Tang, chak wah; Hao, feng; Jiang, Huaxing; Yang, Wentao; Zhou, xianda; Lau, Kei May; Sin, Johnny Kin On
An Auto-Zero-Voltage-Switching Quasi-Resonant LED Driver With GaN FETs and Fully Integrated LED Shunt Protectors
IEEE Journal of Solid-State Circuits, v. 53, (3), March 2018, p. 913-923
Li, Lisong; Gao, Yuan; Jiang, Huaxing; Mok, Philip Kwok Tai; Lau, Kei May
Chemical vapor deposited monolayer MoS₂ top-gate MOSFET with atomic-layer deposited ZrO₂ as gate dielectric
Semiconductor Science and Technology, v.33, (4), March 2018, article number 045004
Hu, Yaoqiao; Jiang, Huaxing; Lau, Kei May; Li, Qiang
Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition
Applied Physics Letters, v. 113, (23), December 2018, article number 232102
Huang, Tongde; Jiang, Huaxing; Bergsten, Johan; Lau, Kei May; Rorsman, Niklas
Enhancement-Mode GaN MOS-HEMTs With Recess-Free Barrier Engineering and High-k ZrO2 Gate Dielectric
IEEE Electron Device Letters, v. 39, (3), March 2018, p. 405-408
Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May
Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters
JOURNAL OF APPLIED PHYSICS, v. 123, (19), May 2018, article number 193104
Shi, Bei; Li, Qiang; Lau, Kei May
GaAs solar cells on nanopatterned Si substrates
IEEE Journal of Photovoltaics, v. 8, (6), November 2018, article number 8488691, p. 1635-1640
Vaisman, Michelle; Jain, Nikhil; Li, Qiang; Lau, Kei May; Makoutz, Emily; Saenz, Theresa; McMahon, Willian E.; Tamboli, Adele C.; Warren, Emily L.
Heterointerface Study of InAs/GaSb Nanoridge Heterostructures Grown by Metal Organic Chemical Vapor Deposition on V-grooved Si (0?0?1) Substrates
Journal of Crystal Growth, v. 484, February 2018, p. 12-16
Lai, Billy; Li, Qiang; Lau, Kei May
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO₂ Gate Dielectric
IEEE Transactions on Electron Devices, v. 65, (12), December 2018, p. 5337-5342
Jiang, Huaxing; Liu, Chao; Ng, Kar Wei; Tang, Chak Wah; Lau, Kei May
InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands
NANOTECHNOLOGY, v. 29, (22), March 2018, article number 225601
Han, Yu; Li, Qiang; Ng, Kar Wei; Zhu, Si; Lau, Kei May
Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors
Semiconductor Science and Technology, v. 33, (4), April 2018, article number 045005
Hu, Yaoqiao; Yip, Pak San; Tang, Chak Wah; Lau, Kei May; Li, Qiang
Interfacially bound exciton state in a hybrid structure of monolayer WS₂ and InGaN quantum dots
Nano Letters, v. 18, (9), September 2018, p. 5640-5645
Cheng, Guanghui; Li, Baikui; Zhao, Chunyu; Yan, Xin; Wang, Hong; Lau, Kei May; Wang, Jiannong
Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy
Optics Letters, v. 43, (14), July 2018, p. 3401-3404
Liu, Chao; Cai, Yuefei; Jiang, Huaxing; Lau, Kei May
Monolithically integrated InGaN/GaN light-emitting diodes, photodetectors, and waveguides on Si substrate
OPTICA, v. 5, (5), May 2018, p. 564-569
Li, K. H.; Fu, W. Y.; Cheung, Y. F.; Wong, K. K. Y.; Wang, Y.; Lau, Kei May; Choi, H. W.
Room temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands
Optica, v. 5, (8), August 2018, p. 918-923
Han, Yu; Ng, Wai Kit; Ma, Chao; Li, Qiang; Zhu, Si; Chan, Christopher Chang Sing; Ng, Kar Wei; Lennon, Stephen; Taylor, Robert; Wong, Kam Sing; Lau, Kei May
Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si
Optics Express, v. 26, (11), May 2018, p. 14514-14523
Zhu, Si; Shi, Bei; Li, Qiang; Lau, Kei May

Conference paper 13

1.5 mu m Room-temperature Electrically Pumped Quantum Dot Lasers Monolithically Grown on Exact (001) Si
Conference Digest - IEEE International Semiconductor Laser Conference, v. 2018-September, 30 October 2018, article number 8516166, p. 61-62
Shi, Bei; Zhu, Si; Li, Qiang; Lau, Kei May
A Power Inductor Integration Technology Using a Silicon Interposer for DC-DC Converter Applications
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 347-350
Ding, Yixiao; Fang, Xiangming; Gao, Yuan; Cai, Yuefei; Qiu, Xing; Mok, Kwok Tai Philip; Lee, Shi-wei; Lau, Kei May; Sin, Johnny Kin On
Comparison of MOCVD Grown GaSb on (001) Si substrates using aspect ratio trapping and interfacial misfit growth methods
2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018, Hyatt RegencyAustin, United States, 7-10 May 2018
Lai, Billy; Li, Qiang; Lau, Kei May
Design, fabrication, transfer bonding and active matrix driving of GaN-based micro-LEDs displays
Proceedings of the International Display Workshops, v. 3, 2018, p. 1334-1337
Liu, Zhaoiun; Zhang, Ke; Qiu, Chengfeng; Lau, Kei May; Kwok, Hoi Sing; Sun, Xiaowei
Experimental Characterization of the Fully Integrated Si-GaN Cascoded FET
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 216-219
Ren, Jie; Tang, Chak Wah; Feng, Hao; Jiang, Huaxing; Yang, Wentao; Lau, Kei May; Sin, Johnny Kin On
High Responsivity InP Nano Photo-Detector Monolithic Integrated on (001) Silicon Substrates by Heteroepitaxy
45th International Symposium on Compound Semiconductors (ISCS 2018) and The 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018): Compound Semiconductor Week (CSW 2018), Boston, 29 May - 1June 2018
Han, Yu; Yan, Zhao; Lau, Kei May
InAs Quantum Dots Lasers Directly Grown on Silicon Emitting at Telecom Wavelengths
31st Annual Conference of the IEEE Photonics Society, IPC 2018, November 2018, article number 8527161
Lau, Kei May
Integration of III-V Compounds on Silicon by Hetero-epitaxy
2018 14th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT), 2018, p. 852-852
Lau, Kei May
Normally-off p-GaN Gate HEMT with Hydrogen Implantation Passivation
Compound Semiconductor Week, CSW 2018, 45th International Symposium on Compound Semiconductors/30th International Conference on Indium Phosphide and Related Materials, Cambridge, MA, USA, 29 May - 1 June 2018
Lyu, Qifeng; Jiang, Huaxing; Xiang, Peng; Cheng, Kai; Lau, Kei May
Room temperature lasing from InP/InGaAs nano-ridges at telecom-bands
2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings, August 2018, article number 8427517
Han, Yu; Ma, Chao; Ng, Wai Kit; Li, Qiang; Wong, Kam Sing; Lau, Kei May
Room Temperature Lasing from InP/InGaAs Nano-ridges at Telecom-bands
Optics InfoBase Conference Papers, v. Part F94-CLEO_SI 2018, 2018
Han, Yu; Ma, Chao; Ng, Wai Kit; Li, Qiang; Wong, Kam Sing; Lau, Kei May
Room-Temperature Electrically Pumped InP-based Laser Directly Grown on on-axis (001) Silicon
Optics InfoBase Conference Papers, v. Part F94-CLEO_SI 2018, 2018
Zhu, Si; Shi, Bei; Li, Qiang; Lau, Kei May
Room-Temperature Electrically Pumped InP-based Laser Directly Grown on on-axis (001) Silicon
2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings, August 2018, article number 8428086
Zhu, Si; Shi, Bei; Li, Qiang; Lau, Kei May


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Article 25

1.3 μm Submilliamp Threshold Quantum Dot Micro-lasers on Si
Optica, v. 4, (8), August 2017, p. 940-944
Wan, Yating; Norman, Justin; Li, Qiang; Kennedy, M. J.; Liang, Di; Zhang, Chong; Huang, Duanni; Zhang, Zeyu; Liu, Alan Y.; Torres, Alfredo; Jung, Daehwan; Gossard, Arthur C.; Hu, Evelyn L.; Lau, Kei May; Bowers, John E.
1.55 μm Band Low-threshold, Continuous-wave Lasing From InAs/InAlGaAs Quantum Dot Microdisks
Optics Letters, v. 42, (4), February 2017, p. 679-682
Zhu, Si; Shi, Bei; Wan, Yating; Hu, Evelyn L.; Lau, Kei May
1.55 μm Room-temperature Lasing from Subwavelength Quantum-dot Microdisks Directly Grown on (001) Si
Applied Physics Letters, v. 110, (12), March 2017, Article Number 121109
Shi, Bei; Zhu, Si; Li, Qiang; Tang, Chak Wah; Wan, Yating; Hu, Evelyn L.; Lau, Kei May
A Novel Si–GaN Monolithic Integration Technology for a High-Voltage Cascoded Diode
IEEE Electron Device Letters, v. 38, (4), April 2017, article number 7847414, p. 501-504
Ren, Jie; Liu, Chao; Tang, Chak Wah; Lau, Kei May; Sin, Johnny Kin On
Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths
Applied Physics Letters, v. 111, (21), November 2017
Han, Yu; Li, Qiang; Zhu, Si; Ng, Kar Wei; Lau, Kei May
Continuous-Wave Optically Pumped 1.55 μm InAs/InAlGaAs Quantum Dot Microdisk Lasers Epitaxially Grown on Silicon
ACS Photonics, v. 4, (2), February 2017, p. 204-210
Shi, Bei; Zhu, Si; Li, Qiang; Wan, Yating; Hu, Evelyn L.; Lau, Kei May
Electrically Pumped Continuous Wave Quantum Dot Lasers Epitaxially Grown on Patterned, on-axis (001) Si
Optics Express, v. 25, (4), February 2017, p. 3927-3934
Norman, Justin C.; Kennedy, Matthew J.; Selvidge, Jennifer G.; Li, Qiang; Wan, Yating; Liu, Alan; Callahan, Patrick G.; Echlin, Mc Lean P; Pollock, Tresa M.; Lau, Kei May; Gossard, Arthur C.; Bowers, John E.
Epitaxial Growth of GaSb on V-grooved Si (001) Substrates with an Ultrathin GaAs Stress Relaxing Layer
Applied Physics Letters, v. 111, (17), October 2017, article number 172103
Li, Qiang; Lai, Billy; Lau, Kei May
Epitaxial Growth of Highly Mismatched III-V Materials on (001) Silicon for Electronics and Optoelectronics
Progress in Crystal Growth and Characterization of Materials, v.63, (4), December 2017, p. 105-120
Li, Qiang; Lau, Kei May
Fin-array Tunneling Trigger with Tunable Hysteresis on (001) Silicon Substrate
IEEE Electron Device Letters, v. 38, (5), May 2017, article number 7888930, p. 556-559
Han, Yu; Li, Qiang; Lau, Kei May
Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison
IEEE Transactions on Electron Devices, v. 64, (3), March 2017, article number 7835614, p. 809-815
Zhang, Xu; Zou, Xinbo; Lu, Xing; Tang, Chak Wah; Lau, Kei May
Fully-integrated Active Matrix Programmable UV and Blue Micro-LED Display System-on-Panel (SoP)
Journal of the Society for Information Display, v. 25, (4), April 2017, p. 240-248
Zhang, Ke; Peng, Deng; Lau, Kei May; Liu, Zhaojun
High Performance Monolithically Integrated GaN Driving VMOSFET on LED
IEEE Electron Device Letters, v. 38, (6), June 2017, article number 7893746, p. 752-755
Lu, Xing; Liu, Chao; Jiang, Huaxing; Zou, Xinbo; Lau, Kei May
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
IEEE Transactions on Electron Devices, v. 64, (3), March 2017, article number 7805226, p. 832-839
Jiang, Huaxing; Liu, Chao; Chen, Yuying; Lu, Xing; Tang, Chak Wah; Lau, Kei May
Low-Flicker Lighting from High-Voltage LEDs Driven by a Single Converter-Free Driver
IEEE Photonics Technology Letters, v. 29, (19), October 2017, article number 9013783, p. 1675-1678
Cai, Yuefei; Zou, Xinbo; Gao, Yuan; Li, Lisong; Mok, Philip K.T.; Lau, Kei May
Monolithically Integrated InAs/InGaAs Quantum Dot Photodetectors on Silicon Substrates
Optics Express, v. 25, (22), October 2017, p. 27715-27723
Wan, Yating; Zhang, Zeyu; Chao, Ruilin; Norman, Justin; Jung, Daehwan; Shang, Chen; Li, Qiang; Kennedy, M. J.; Liang, Di; Zhang, Chong; Shi, Jin-Wei; Gossard, Arthur C.; Lau, Kei May; Bowers, John E.
O-band Electrically Injected Quantum Dot Micro-ring Lasers on On-axis (001) GaP/Si and V-groove Si
OPTICS EXPRESS, v.25, (22), October 2017, p. 26853-26860
Wan, Yating; Jung, Daehwan; Norman, Justin; Shang, Chen; MacFarlane, Ian; Li, Qiang; Kennedy, M. J.; Gossard, Arthur C.; Lau, Kei May; Bowers, John E.
Optical Cross-talk Reduction in a Quantum-dot-based Full-color Micro-light-emitting-diode Display by a Lithographic-fabricated Photoresist Mold
Photonics Research, v. 5, (5), October 2017, p. 411-416
Lin, Huang-Yu; Sher, Chin-Wei; Hsieh, Dan-Hua; Chen, Xin-Yin; Chen, Huang-Ming Philip; Chen, Teng-Ming; Lau, Kei-May; Chen, Chyong-Hua; Lin, Chien-Chung; Kuo, Hao-Chung
Parametric Study of High-performance 1.55 mu m InAs Quantum Dot Microdisk Lasers on Si
Optics Express, v.25, (25), December 2017, p. 31281-31293
Zhu, Si; Shi, Bei; Li, Qiang; Wan, Yating; Lau, Kei May
Self-organized InAs/InAlGaAs Quantum Dots as Dislocation Filters for InP Films on (001) Si
Journal of Crystal Growth, v. 464, April 2017, p. 28-32
Shi, Bei; Li, Qiang; Lau, Kei May
Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric
IEEE Transactions on Electron Devices, v. 64, (3), March 2017, article number 7837657, p. 824-831
Lu, Xing; Yu, Kun; Jiang, Huaxing; Zhang, Anping; Lau, Kei May
Switching Performance of Quasi-vertical GaN-based p-i-n Diodes on Si
Physica Status Solidi (A) Applications and Materials Science, V. 214, (8), 15 May 2017, article number 1600817
Zhang, Xu; Zou, Xinbo; Tang, Chak Wah; Lau, Kei May
Transistors and tunnel diodes enabled by large-scale MoS2 nanosheets grown on GaN
Semiconductor Science and Technology, v. 32, (7), June 2017, article number 075011
Yip, Pak San; Zou, Xinbo; Cho, Wai Ching; Wu, Kam Lam; Lau, Kei May
Tristate Memory Cells Using Double-Peaked Fin-Array III-V Tunnel Diodes Monolithically Grown on (001) Silicon Substrates
IEEE Transactions on Electron Devices, v.64, (10), Oct 2017, article number 8012489, p. 4078-4083
Han, Yu; Li, Qiang; Lau, Kei May
Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters
IEEE Electron Device Letters, v. 39, (2), Feb 2018, article number 1, p. 224-227
Cai, Yuefei; Zou, Xinbo; Lau, Kei May

Conference paper 11

Distinguished Student Paper: Fully‐Integrated Active Matrix Programmable UV and Blue Micro‐LED Display System‐on‐Panel (SoP)
Digest of Technical Papers - SID International Symposium, v. 48, (1), June 2017, p. 358-361
Zhang, Ke; Peng, Deng; Lau, Kei May; Liu, Zhaojun
Fully-Integrated AMLED Micro Display System With a Hybrid Voltage Regulator
2017 IEEE Asian Solid-State Circuits Conference, A-SSCC 2017 - Proceedings, v. 2017-January, December 2017, p. 277-280
Jiang, Junmin; Sun, Liusheng; Zhang, Xu; Yuen, Shing Hin; Li, Xianbo; Ki, Wing Hung; Yue, Patrick C.; Lau, Kei May
GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth
2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2017, p. 578-581
Vaisman, Michelle; Jain, Nikhil; Li, Qiang; Lau, Kei May; Tamboli, Adele C.; Warren, Emily L.
InAs Quantum Dot Micro-disk Lasers Grown on (001) Si Emitting at Communication Wavelengths
Proceedings of SPIE - The International Society for Optical Engineering, v. 10123, February 2017, article number 101230J
Lau, Kei May; Shi, Bei; Wan, Yating; Liu, Alan Y.; Li, Qiang; Zhu, Si; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L.
InAs/GaAs Quantum Dot Lasers on Exact GaP/Si (001) and Other Templates
CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, 2017
Bowers, John E.; Liu, Alan; Jung, Daehwan; Norman, Justin C.; Gossard, Arthur C.; Wan, Yating; Li, Qiang; Lau, Kei May; Lee, Minjoo Larry
InAs/InAlGaAs quantum Dot-on-Silicon microdisk lasers Operating at 1.55 μm
Optics InfoBase Conference Papers, v. Part F41-CLEO_SI 2017, 2017
Shi, Bei; Zhu, Si; Li, Qiang; Wan, Yating; Hu, Evelyn; Lau, Kei May
InP/InGaAs nano-ridge array on exact (001) silicon substrate emitting at telecommunication wavelengths
The 44 th International Symposium on Compound Semiconductors (ISCS 2017) and The 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017) :Compound Semiconductor Week (CSW 2017), Berlin, 14-18 May 2017
Han, Yu; Li qiang; Zhu, Si; Lau, Kei May
Quantum Dot Lasers Grown on (001) Si Substrate for Integration with Amorphous Si Waveguides
Optical Fiber Communications Conference and Exhibition, v. Part F40-OFC 2017, 2017, article number Th3I.7
Wan, Yating; Li, Qiang; Liu, Alan Y.; Geng, Yu; Norman, Justin; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L.; Lau, Kei May
Room Temperature 1.55 pm Lasing of Sub-wavelength Quantum-dot Lasers Epitaxially Grown on (001) Silicon
European Conference on Optical Communication, ECO, v. 2017-September, April 2018, p. 1-3
Zhu, Si; Shi, Bei; Li, Qiang; Wan, Yating; Hu, Evelyn L.; Lau, Kei May
Sub-mA Threshold 1.3 μm CW Lasing from Electrically Pumped Micro-rings Grown on (001) Si
Optics InfoBase Conference Papers, v. Part F43-CLEO_AT 2017, 2017
Wan, Yating; Norman, Justin; Li, Qiang; Kennedy, M.J.; Liang, Di; Zhang, Chong; Huang, Duanni; Liu, Alan Y.; Torres, Alfredo; Jung, Daehwan; Gossard, Arthur C.; Hu, Evelyn L.; Lau, Kei May; Bowers, John E.
Switching Characteristics of Monolithically Integrated Si-GaN Cascoded Rectifiers
Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2017), 2017, article number 7988928, p. 223-226
Ren, Jie; Liu, Chao; Tang, Chak Wah; Lau, Kei May; Sin, Jonny K.O.


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Article 28

1.3-μm InAs Quantum-dot Micro-disk Lasers on V-groove Patterned and Unpatterned (001) silicon
Optics Express, v. 24, (18), September 2016, p. 21038-21045
Li, Qiang; Wan, Yating; Liu, Alan; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn; Lau, Kei May
Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates
IEEE Electron Device Letters, v. 37, (9), September 2016, article number 7524000, p. 1158-1161
Zou, Xinbo; Zhang, Xu; Lu, Xing; Tang, Chakwah; Lau, Keimay
Clivorine, an Otonecine Pyrrolizidine Alkaloid from Ligularia Species, Impairs Neuronal Differentiation via NGF-Induced Signaling Pathway in Cultured PC12 Cells
Phytomedicine, v. 23, (9), August 2016, p. 931-938
Xiong, Aizhen; Yan, Artemis Lu; Bi, Wenchuan; Lam, Yin Ching; Chan, Kar Lun Gallant; Lau, Kei May; Dong, Ting Xia; Lin, Huangquan; Yang, Li; Wang, Zhengtao; Tsim, Karl Wah Keung
Coalescence of Planar GaAs Nanowires into Strain-free Three-dimensional Crystals on Exact (001) Silicon
Journal of Crystal Growth, v. 454, November 2016, p. 19-24
Li, Qiang; Jiang, Huaxing; Lau, Kei May
Design and Characterization of Active Matrix LED Microdisplays with Embedded Visible Light Communication Transmitter
Journal of Lightwave Technology, v. 34, (14), July 2016, p. 3449-3457
Li, Xianbo; Wu, Liang; Liu, Zhaojun; Hussain, Babar; Chong, Wing Cheung; Lau, Kei May; Yue, Patrick C.
Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique
Journal of Crystal Growth, v. 433, January 2016, p. 19-23
Shi, Bei; Lau, Kei May
Fabrication and Characterization of High-Voltage LEDs Using Photoresist-Filled-Trench Technique
Journal of Display Technology, v. 12, (4), April 2016, article number 7303888, p. 397-401
Zou, Xinbo; Cai, Yuefei; Chong, Wing Cheung; Lau, Kei May
Full-color pixelated-addressable light emitting diode on transparent substrate (LEDoTS) micro-displays by CoB
Journal of Display Technology, v. 12, (7), July 2016, article number 7386564, p. 724-746
Peng, Deng; Zhang, K.Zhang, Ke; Chao, Victor Shin Deh; Mo, Weijing; Lau, Kei May; Liu, Zhaojun
Fully Vertical GaN p-i-n DiodesUsing GaN-on-Si Epilayers
IEEE Electron Device Letters, v. 37, (5), May 2016, p. 636-639
Zou, Xinbo; Zhang, Xu; Lu, Xing; Tang, Chak Wah; Lau, Kei May
GaAs-InGaAs-GaAs Fin-Array Tunnel Diodes on (001) Si Substrates With Room-Temperature Peak-to-Valley Current Ratio of 5.4
IEEE Electron Device Letters, v. 37, (1), January 2016, article number 7323841, p. 24-27
Li, Qiang; Han, Yu; Lu, Xing; Lau, Kei May
Growing InGaAs Quasi-quantum Wires Inside Semi-rhombic Shaped Planar InP Nanowires on Exact (001) Silicon
Applied Physics Letters, v. 108, (24), June 2016, Article number 242105
Han, Yu; Li, Qiang; Chang, Shih-Pang; Hsu, Wen-Da; Lau, Kei May
Highly Ordered Horizontal Indium Gallium Arsenide/Indium Phosphide Multi-Quantum-Well in Wire Structure on (001) Silicon Substrates
Journal of Applied Physics, v. 120, (24), December 2016, article number 245701
Han, Yu; Li, Qiang; Lau, Kei May
Investigation of Photon-Generated Leakage Current for High-Performance Active Matrix Micro-LED Displays
IEEE Transactions on Electron Devices, v. 63, (12), December 2016, article number 7726032, p. 4832-4838
Zhang, Ke; Peng, Deng; Chong, Wing Cheung; Lau, Kei May; Liu, Zhaojun
Low-leakage High-breakdown Laterally Integrated HEMT-LED via n-GaN Electrode
IEEE Photonics Technology Letters, v. 28, (10), May 2016, article number 7416644, p. 1130-1133
Liu, Chao; Cai, Yuefei; Zou, Xinbo; Lau, Kei May
Mastering the Marriage of III-Vs and Silicon
Compound Semiconductor, v. 22, (1), 2016, Feb, p. 64-68
Li, Qiang; Lau, Kei May
Monolithic Integration of Enhancement-mode Vertical Driving Transistorson a Standard InGaN/GaN Light Emitting Diode Structure
Applied Physics Letters, v. 109, (5), August 2016, article number 053504
Lu, Xing; Liu, Chao; Jiang, Huaxing; Zou, Xinbo; Zhang, Anping; Lau, Kei May
Monolithic Integration of Tunnel Diode Based Inverters on Exact (001) Si Substrates
IEEE Electron Device Letters, v. 37, (6), June 2016, article number 7450138, p. 717-720
Han, Yu; Li, Qiang; Lau, Kei May
Off-state Drain Leakage Reduction by Post Metallization Annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Si
Physica Status Solidi (A) Applications and Materials Science, v. 213, (4), April 2016, p. 868-872
Jiang, Huaxing; Lu, Xing; Liu, Chao; Li, Qiang; Lau, Kei May
Off-state Leakage Current Reduction in AlGaN/GaN High Electron Mobility Transistors by Combining Surface Treatment and Post-gate Annealing
Semiconductor Science and Technology, v. 31, (5), April 2016, Article no. 055019
Lu, Xing; Jiang, Huaxing; Liu, Chao; Zou, Xinbo; Lau, Kei May
Optical crosstalk analysis of micro-pixelated GaN-based light-emitting diodes on sapphire and Si substrates
Physica Status Solidi (A) Applications and Materials Science, v. 213, (5), May 2016, p. 1193-1198
Li, K. H.; Cheung, Y. F.; Tang, Ching Wan; Zhao, C.; Lau, Kei May; Choi, Hoi Wai
Optically Pumped 1.3μm Room-temperature InAs Quantum-dot Micro-disk Lasers Directly Grown on (001) Silicon
Optics Letters, v. 41, (7), April 2016, p. 1664-1667
Wan, Yating; Li, Qiang; Liu, Alan; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn; Lau, Kei May
Optimization of a common buffer platform for monolithic integration of InGaN/GaN light emitting diodes and AlGaN/GaN high electron mobility transistors
Journal of Electronic Materials, v. 45, (4), April 2016, p. 2092-2101
Liu, Chao; Cai, Yuefei; Jiang, Huaxing; Lau, Kei May
Optimization of electrode structure for flip-chip HVLED via two-level metallization
Physica Status Solidi (A) Applications and Materials Science, v. 213, (5), May 2016, p. 1199-1203
Cai, Yuefei; Zou, Xinbo; Chong, Wing Cheung; Lau, Kei May
Selectable Synthesis of 2-D MoS₂ and Its Electronic Devices: From Isolated Triangular Islands to Large-Area Continuous Thin Film
IEEE Transactions on Nanotechnology, v. 15, (2), March 2016, article number 7398078, p. 310-317
Cho, Wai Ching; Wu, Kam Lam; Yip, Pak San; Wang, Xinsheng; Chai, Yang; Lau, Kei May
Sub-wavelength InAs Quantum Dot Micro-disk Lasers Epitaxially Grown on Exact Si (001) Substrates
Applied Physics Letters, v. 108, (22), May 2016, Article number 221101
Wan, Yating; Li, Qiang; Liu, Alan; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn; Lau, Kei May
Temperature Characteristics of Epitaxially Grown InAs Quantum Dot Micro-disk Lasers on Silicon for On-chip Light Sources
Applied Physics Letters, v. 109, (1), July 2016, article number 011104
Wan, Yating; Li, Qiang; Liu, Alan; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L.; Lau, Kei May
Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate
Applied Physics Express, v. 9, (3), March 2016, Article number 031001
Lu, Xing; Liu, Chao; Jiang, Huaxing; Zou, Xinbo; Zhang, Anping; Lau, Kei May
Vertical LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers and Au-Free Bonding
IEEE Transactions on Electron Devices, v. 63, (4), April 2016, article number 7412742, p. 1587-1593
Zou, Xinbo; Zhang, Xu; Chong, Wing Cheung; Tang, Chak Wah; Lau, Kei May

Conference paper 14

1-μm InAs Quantum Dot Micro-disk Lasers Directly Grown on Exact (001) Si
Conference Digest - IEEE International Semiconductor Laser Conference, December 2016, article number 7765705
Lau, Kei May; Wan, Yating; Li, Qiang; Liu, Alan Y.; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L.
Efficient Use of Uniform GaN HVLEDs for Small Flicker General Illumination Applications with Coverter-free LED Drivers
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, August 2016, article number 7528729
Cai, Yuefei; Zou, Xinbo; Gao, Yuan; Li, Lisong; Mok, Philip K.T.; Lau, Kei May
Fabrication and Improved Performance of AlGaN/GaN HEMTs with Regrown Ohmic Contacts and Passivation-first Process
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, August 2016, article number 7528722
Huang, Tongde; Liu, Chao; Bergsten, Johan; Jiang, Huaxing; Lau, Kei May; Rorsman, Niklas
High Voltage Low Current Collapse AlGaN/GaN MISHEMTs with in-situ SiN Gate Dielectric
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, August 2016, article number 7528765
Jiang, Huaxing; Liu, Chao; Lu, Xing; Lau, Kei May
Homogeneous and Heterogeneous Integration of GaN-based Light Emitting Diodes and Driving Transistors
7th IEEE International NAnoelectronics Conference (INEC) 2016, Chengdu, China, May 9-11, 2016
Liu, Zhaojun; Lau, Kei May
InP Nanowire Arrays with Embedded InGaAs Quantum wells Grown on Patterned (001) Si Substrates
18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVIII), San Diego, 10-15 July 2016
Han, Yu; Li qiang; Chang shih-pang; Hsu wen-da; Lau, Kei May
Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs
2016 International Conference on Compound Semiconductor Manufacturing Technology, Miami, Florida, USA, 16-19 May 2016
Yu, Kun; Liu, Chao; Jiang, Huaxing; Lu, Xing; Lau, Kei May; Zhang, Anping
Low Leakage High Breakdown GaN MOSHEMTs on Si with a ZrO2 Gate Dielectric
CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, 2017
Jiang, Huaxing; Liu, Chao; Chen, Yuying; Tang,Chak Wah; Lau, Kei May
Monolithically integrated GaN-based HEMT-LED and InGaN/GaN photodiodes for on-chip optical interconnects
28th International Conference on Indium Phosphide & Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, Japan, June 26-30, 2016
Liu, Chao; Jiang, Huaxing; Cai, Yuefei; Lau, Kei May
Multi-layer InAs/InAlGaAs quantum dots embedded into InP on Si (001) substrate for dislocation filtering
18th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XVIII), San Diego, California, USA, 10-15 July 2016
Shi, Bei; Li, Qiang; Lau, Kei May
Room Temperature CW 1.3 μm Single Mode Lasing of InAs Quantum Dot Micro-disk Lasers Grown on (001) Si
2016 Conference on Lasers and Electro-Optics, CLEO 2016, December 2016, article number 7788536
Wan, Yating; Li, Qiang; Liu, Alan; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn; Lau, Kei May
Suppression of Current Collapse in AlGaN/GaN MISHEMTs using in-situ SiN Gate Dielectric and PECVD SiN Passivation
CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology, 2016, p. 289-291
Jiang, Huaxing; Liu, Chao; Lu, Xing; Lau, Kei May
Switching Performance of Quasi-Vertical GaN-Based p-i-n Diodes on Si
International Workshop on Nitride Semiconductors (IWN 2016), 2-7 October 2016, p. 242-242
Zhang, Xu; Zou, Xinbo; Lau, Kei May; Tang, Chak Wah
Voltage-Controlled Light Modulation Enabled by Monolithically Integrated HEMT-LED Device
International Workshop on Nitride Semiconductors (IWN 2016), Orlando, Florida, October 2-7, 2016
Cai, Yuefei; Zou, Xinbo; Liu, Chao; Lau, Kei May


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Article 14

Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiN_x Gate Dielectric
IEEE Transactions on Electron Devices, v. 62, (6), June 2015, article number 7093156, p. 1862-1869
Lu, Xing; Ma, Jun; Jiang, Huaxing; Liu, Chao; Xu, Peiqiang; Lau, Kei May
GaN-based LED micro-displays for wearable applications
Microelectronic Engineering, v. 148, December 2015, p. 98-103
Liu, Zhaojun; Chong, Wing Cheung; Wong, Ka Ming; Lau, Kei May
Growing Antiphase-domain-free GaAs Thin Films Out of Highly Ordered Planar Nanowire Arrays on Exact (001) Silicon
Applied Physics Letters, v. 106, (7), February 2015, article number 072105
Li, Qiang; Ng, Kar Wei; Lau, Kei May
Hetero-epitaxy of Lg = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications
Chinese Physics B, v. 24, (8), August 2015, article number 087305
Huang, Jie; Li, Ming; Zhao, Qian; Gu, Wenwen; Lau, Kei May
High-speed InGaAs photodetectors by selective-area MOCVD toward optoelectronic integrated circuits
IEEE Journal on Selected Topics in Quantum Electronics, v. 20, (6), November 2015, article number 2321278
Geng, Yu; Feng, Shaoqi; Poon, Andrew Wing On; Lau, Kei May
Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping
Journal of Crystal Growth, v. 414, March 2015, p. 243-247
Liu, Chao; Liu, Zhaojun; Huang, Tongde; Ma, Jun; Lau, Kei May
InAlGaAs/InAlAs MQWs on Si Substrate
IEEE Photonics Technology Letters, v. 27, (7), April 2015, p. 748-751
Shi, Bei; Li, Qiang; Wan, Yating; Ng, Kar Wei; Zou, Xinbo; Tang, Chak Wah; Lau, Kei May
InAs/GaAs Quantum Dots on GaAs-on-V-grooved-Si Substrate with High Optical Quality in the 1.3 μm Band
Applied Physics Letters, v. 107, (8), August 2015, article number 081106
Wan, Yating; Li, Qiang; Geng, Yu; Shi, Bei; Lau, Kei May
Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors
Applied Physics Letters, v. 106, (18), May 2015, article number 181110
Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May
MOVPE growth of in situ SiNx/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio
Journal of Crystal Growth, v. 414, March 2015, p. 237-242
Ma, Jun; Lu, Xing; Zhu, Xueliang; Huang, Tongde; Jiang, Huaxing; Xu, Peiqiang; Lau, Kei May
Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD
Chinese Physics B, v. 24, (7), July 2015, article number 078102
Huang, Jie; Li, Ming; Lau, Keimay
Reduced Expression of P2Y2 Receptor and Acetylcholinesterase at Neuromuscular Junction of P2Y1 Receptor Knock-out Mice
Journal of Molecular Neuroscience, v. 57, (3), November 2015, p. 446-451
Xu, Miranda Li; Bi, Wenchuan; Cheng, Kwan Wai; Mak, Shinghung; Yao, Ping; Luk, Wilson K.W.; Lau, Kei May; Cheng, Anthony W.M.; Tsim, Karl Wah Keung
Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology
Optics Express, v. 23, (25), December 2015, p. 32504-32515
Han, Hauvei; Lin, Huangyu; Lin, Chienchung; Chong, Wing Cheung; Li, Jieru; Chen, Kuoju; Yu, Peichen; Chen, Tengming; Chen, Huangming; Lau, Kei May; Kuo, Haochung
The Volatile Oil of Nardostachyos Radix et Rhizoma Induces Endothelial Nitric Oxide Synthase Activity in HUVEC Cells
PLoS ONE, v. 10, (2), February 2015, article number e0116761
Maiwulanjiang, Maitinuer; Bi, Wenchuan; Lee, Pinky Sum-chi; Xin, Guizhong; Miernisha, Abudureyimu; Lau, Kei May; Xiong, Aizhen; Li, Ning; Dong, Ting Xia; Aisa, Haji Akber Kber; Tsim, Karl Wah Keung

Conference paper 15

1.3 μm Photoluminescence from InAs/GaAs Quantum Dots on CMOS-compatible (001) Silicon by Metal-organic Chemical Vapor Deposition
International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Hokkaido, Japan, 27-30 September 2015
Wan, Yating; Li, Qiang; Geng, Yu; Lau, Kei May
A Low Substrate Loss, Monolithically Integrated Power Inductor for Compact LED Drivers
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 53-56
Fang, Xiangming; Mak, Tsz Him; Gao, Yuan; Lau, Kei May; Mok, Philip Kwok Tai; Sin, Johnny Kin On
An AMLED Microdisplay Driver SoC with Built-In 1.25-Mb/s VLC Transmitter
2015 Symposium on VLSI Circuits (VLSI Circuits 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. C328-C329
Wu, Liang; Li, Xianbo; Chong, Wing Cheung; Liu, Zhaojun; Che, Fengyu; Hussain, Babar; Lau, Kei May; Yue, Chik Patrick
Buffer Structure Optimization of Monolithically Integrated HEMT-LED Using a Metal-Interconnection-Free Integration Scheme
57th Electronic Materials Conference (EMC), Columbus, Ohio, USA, 24-26 June 2015
Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May
Control of Threshold Voltage in Ultrathin-barrier AlGaN/GaN based MISHEMTs with Low-frequency SiNx Gate Dielectric and Al2O3 Interfacial Layer
The 11th International Conference on Nitride Semiconductors (ICNS 2015), Beijing, China, 30 August - 4 September 2015
Jiang, Huaxing; Liu, Chao; Lu, Xing; Lau, Kei May
Effect of high-temperature thermal treatment on AlGaN/GaN HEMT Epi for monolithic integration
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Ren, Jie; Liu, Chao; Lau, Kei May; Sin, Johnny K.O.
Effects of Double-cap Technique on the Improvement of InAs/InAlGaAs/InP Quantum Dots Grown by Metal-organic Chemical Vapor Deposition
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials, Sapporo, 2015, 2015, p. 290-291
Shi, Bei; Lau, Kei May
Enhanced optical performance of monolithically integrated HEMT-LED by buffer optimization
57th Electronic Materials Conference (EMC), Columbus, Ohio, USA, 24-26 June 2015
Liu, Chao; Cai, Yuefei; Lau, Kei May
Fabrication of Large Area Flip-chip High Voltage LEDs with 2 Micron Gap
1th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Cai, Yuefei; Zou, Xinbo; Chong, Wing Cheung; Lau, Kei May
GaAs/In0.2Ga0.8As Fin-Array-Esaki Tunnel Diodes Fabricated on (001) Silicon by Aspect Ratio Trapping
2015 International Conference on Solid State Devices and Materials, Sapporo, Japan, 27-30 September 2015
Li, Qiang; Han, Yu; Lau, Kei May
High Performance Field Effect Transistors Based on Large Area Mos₂ Thin Films
2015 MRS Spring Meeting & Exhibit, San Francisco, CA, USA, 6-10 April 2015
Cho, Wai Ching; Wang, Xinsheng; Liu, Zhaojun; Chai, Yang; Lau, Kei May
Improved Performance of AlGaN/GaN HEMTs by O2-plasma and HCl Surface Treatment
The 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, 30 August - 4 September 2015
Lu, Xing; Jiang, Huaxing; Liu, Chao; Lau, Kei May
Off-state Drain Leakage Reduction by Post Metallization Annealing for Al₂O₃/GaN/AlGaN/GaN MOSHEMTs on Silicon
The 42nd International Symposium on Compound Semiconductors, Santa Barbara, Santa Barbara, California, USA, 28 June - 2 July 2015
Jiang, Huaxing; Lu, Xing; Liu, Chao; Lau, Kei May
Off-state Leakage Current Reduction in AlGaN/GaN HEMTs by Combining Surface Treatment and PGA
The 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Lu, Xing; Jiang, Huaxing; Liu, Chao; Zou, Xinbo; Lau, Kei May
Orderly Array of In-Plane GaAs Nanowires on Exact (001) Silicon for Antiphase-Domain-Free GaAs Thin Films
CS MANTECH 2015 - 2015 International Conference on Compound Semiconductor Manufacturing Technology, 2015, p. 71-74
Li, Qiang; Ng, Kar Wei; Lau, Kei May


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Article 16

Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition
Applied Physics Letters, v. 104, (3), January 2014, article number 032903
Lu, Xing; Ma, Jun; Jiang, Huaxing; Lau, Kei May
Defect Reduction in Epitaxial InP on Nanostructured Si (001) Substrates with Position-controlled Seed Arrays
Journal of Crystal Growth, v. 405, November 2014, p. 81-86
Li, Qiang; Ng, Kar Wei; Tang, Chak Wah; Lau, Kei May; Hill, Richard; Vert, Alexey
Enhancement-mode Lg = 50 nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with fmax surpassing 408 GHz
Solid-State Electronics, v. 99, 2014, p. 7-10
Li, Ming; Tang, Chak Wah; Li, Haiou; Lau, Kei May
Growth and Characterization of Horizontal GaN Wires on Silicon
Applied Physics Letters, v. 104, (26), June 2014, article number 262101
Zou, Xinbo; Lu, Xing; Lucas, Ryan; Kuech, Thomas F.; Choi, Jonathan W.; Gopalan, Padma; Lau, Kei May
Growth of Ultra-high Mobility In0.52Al0.48As/InxGa1-xAs (x >= 53%) Quantum Wells on Si Substrates using InP/GaAs Buffers by Metalorganic Chemical Vapor Deposition
Applied Physics Express, v. 7, (4), 2014, article number 045502
Li, Qiang; Tang, Chak Wah; Lau, Kei May
High-efficiency Blue and Green LEDs Grown on Si with 5 Micrometer Thick GaN Buffer
Physica Status Solidi (C): Current Topics in Solid State Physics, v. 11, (3-4), 2014, p. 730-733
Zou, Xinbo; Wong, Ka Ming; Chong, Wing Cheung; Ma, Jun; Lau, Kei May
In situ growth of SiNx as gate dielectric and surface passivation for AIN/GaN heterostructures by metalorganic chemical vapor deposition
Applied physics express, v. 7, (9), September 2014, article number 091002
Ma, Jun; Lu, Xing; Jiang, Huaxing; Liu, Chao; Lau, Kei May
In situ SiNx gate dielectric by MOCVD for low-leakage-current ultra-thin-barrier AlN/GaN MISHEMTs on Si
Physica Status Solidi (A) Applications and Materials Science, v. 211, (4), April 2014, p. 775-778
Lu, Xing; Ma, Jun; Liu, Zhaojun; Jiang, Huaxing; Huang, Tongde; Lau, Kei May
Lg = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD
Chinese Physics B, v. 23, (12), December 2014, article number 128102
Huang, Jie; Li, Ming; Tang, Chak Wah; Lau, Kei May
Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition
Applied physics letters, v. 105, (10), September 2014, article number 102911
Lu, Xing; Ma, Jun; Jiang, Huaxing; Liu, Chao; Lau, Kei May
Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition
Chinese Physics B, v. 23, (3), 2014, article number 038403
Li, Ming; Wang, Yong; Wong, Kaming; Lau, Kei May
Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD
IEEE Electron Device Letters, v. 35, (3), 2014, article number 6730671, p. 330-332
Liu, Zhaojun; Huang, Tongde; Ma, Jun; Liu, Chao; Lau, Kei May
Performance Enhancements of Flip-Chip Light-Emitting Diodes With High-Density n-Type Point-Contacts
IEEE Electron Device Letters, v. 35, (10), October 2014, article number 6894119, p. 1049-1051
Chong, Wing Cheung; Lau, Kei May
Quantification of the Transcripts Encoding Different Forms of AChE in Various Cell Types: Real-Time PCR Coupled with Standards in Revealing the Copy Number
Journal of Molecular Neuroscience, v. 53, (3), July 2014, p. 461-468
Bi, Wenchuan; Luk, Wilson K.W.; Campanari, Maria-Letizia; Liu, Yuen H.; Xu, Li; Lau, Kei May; Xu, Miranda Li; Choi, Chi Yan; Saez-valero, Javier; Tsim, Karl Wah Keung
Selective Epitaxial Growth of Monolithically Integrated GaN-based Light Emitting Diodes with AlGaN/GaN Driving Transistors
Applied Physics Letters, v. 104, (9), March 2014, article number 091103
Liu, Zhaojun; Ma, Jun; Huang, Tongde; Liu, Chao; Lau, Kei May
Self-aligned gate-last enhancement- and depletion-mode AlN/GaN MOSHEMTs on Si
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), 2014, p. 890-893
Huang, Tongde; Ma, Jun; Lu, Xing; Liu, Zhaojun; Zhu, Xueliang; Lau, Kei May

Conference paper 10

1700 pixels per inch (PPI) passive-matrix micro-LED display powered by ASIC
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, December 2014, article number 6978524
Chong, Wing Cheung; Cho, Wai Keung; Liu, Zhaojun; Wang, Chu Hong; Lau, Kei May
Growth and Characterization of GaN Wires Grown on Nano-Scale Porous SiO₂ Patterned GaN/Si Templates
The 56th Electronic Materials Conference (EMC 2014), The University of California, Santa Barbara, USA, 25-27 June 2014
Zou, Xinbo; Lu, Xing; Lucas, Ryan; Kuech, Thomas F.; Choi, Jonathan W; Gopalan, Padma; Lau, Kei May
Growth of Low Defect-density InP on Exact Si (001) Substrates by Metalorganic Chemical Vapor Deposition with Position-controlled Seed Arrays
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2014, article number 6880514
Li, Qiang; Tang, Chak Wah; Lau, Kei May; Hill, Richard; Vert, Alexey
High performance self-aligned AlN/GaN MISHEMT with in-situ SiNx gate dielectric and regrown source/drain
CS MANTECH 2014 - 2014 International Conference on Compound Semiconductor Manufacturing Technology, 2014, p. 201-204
Lu, Xing; Ma, Jun; Xu, Peiqiang; Jiang, Huaxing; Lau, Kei May
III-V-IV Integration Toward Electronics and Photonics Convergence on a Silicon Platform
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, January 2014, article number 7021190
Lau, Kei May; Li, Qiang
Integrated Magnetics for Eco-friendly LED System-on-a-Chip Applications
The 4th International Power Supply on Chip Workshop (PwrSoC2014), Boston, Massachusetts, USA, 6-8 October 2014
Fang, Xiangming; Sin, Johnny Kin On; Lau, Kei May; Yue, Chik Patrick; Mok, Philip Kwok Tai
Integration Scheme Toward LED System-on-a-Chip (SoC)
Solid-State and Organic Lighting, SOLED 2014; Energy Change Institute, Australian National UniversityCanberra, Australia, 2 December 2014 through 5 December 2014
Mak, Tsz Him; Liu, Zhaojun; Chong, Wing Cheung; Gao, Yuan; Fang, Xiangming; Sin, Johnny Kin On; Mok, Philip Kwok Tai; Lau, Kei May
LED on silicon (LEDoS) microdisplays
Solid-State and Organic Lighting, SOLED 2014, Australia : Optical Society of America (OSA), 2014
Lau, Kei May
Monolithic Integration of III-nitride LEDs and Driver HEMT Transistors by MOCVD
Asia Communications and Photonics Conference, ACPC 2014, November 2014
Lau, Kei May
Through Silicon Underfill Dispensing for 3D Die/Interposer Stacking
Proceedings - Electronic Components and Technology Conference, September 2014, article number 6897397, p. 919-924
Le, Fuliang; Lee, Ricky Shi-wei; Lau, Kei May; Yue, Chik Patrick; Sin, Johnny Kin On; Mok, Philip Kwok Tai; Ki, Wing Hung; Choi, Hoi Wai


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Article 11

360 PPI Flip-Chip Mounted Active Matrix Addressable Light Emitting Diode on Silicon (LEDoS) Micro-Displays
IEEE/OSA Journal of Display Technology, v. 9, (8), 2013, article number 6502265, p. 678-682
Liu, Zhaojun; Chong, Wing Cheung; Wong, Ka Ming; Lau, Kei May
A GaN-Based Lamb-Wave Oscillator on Silicon for High-Temperature Integrated Sensors
IEEE Microwave and Wireless Components Letters, v. 23, (6), 2013, article number 6514898, p. 318-320
Lu, Xing; Ma, Jun; Yue, Chik Patrick; Lau, Kei May
A novel BLU-free full-color LED projector using LED on silicon micro-displays
IEEE Photonics Technology Letters, v. 25, (23), 2013, article number 6626565, p. 2267-2270
Liu, Zhaojun; Chong, Wing Cheung; Wong, Ka Ming; Tam, Ka Ho; Lau, Kei May
A Novel Full-Color 3LED Projection System using R-G-B Light Emitting Diodes on Silicon (LEDoS) Micro-displays
Digest of Technical Papers - SID International Symposium, v. 44, (1), 2013, p. 838-841
Chong, Wing Cheung; Wong, Ka Ming; Liu, Zhaojun; Lau, Kei May
DC and RF Performance of Gate-Last AlN/GaN MOSHEMTs on Si With Regrown Source/Drain
IEEE Transactions on Electron Devices, v. 60, (10), 2013, article number 6576811, p. 3019-3024
Huang, Tongde; Liu, Zhao Jun; Zhu, Xueliang; Ma, Jun; Lu, Xing; Lau, Kei May
GaN-Based S-0-Wave Sensors on Silicon for Chemical and Biological Sensing in Liquid Environments
IEEE Sensors Journal, v. 13, (4), 2013, article number 6374634, p. 1245-1251
Lu, Xing; Lee, Chi Ming; Wu, Shu Yuen; Ho, Ho Pui; Lau, Kei May
High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates
IEEE Electron Device Letters, v. 34, (7), 2013, article number 6521369, p. 903-905
Zou, Xinbo; Wong, Ka Ming; Zhu, Xueliang; Chong, Wing Cheung; Ma, Jun; Lau, Kei May
Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers
Journal of Crystal Growth, v. 370, May 2013, p. 265-268
Ma, Jun; Zhu, Xueliang; Wong, Ka Ming; Zou, Xinbo; Lau, Kei May
Investigation of Forward Voltage Uniformity in Monolithic Light-Emitting Diode Arrays
IEEE Photonics Technology Letters, v. 25, (13), 2013, article number 6516916, p. 1290-1293
Liu, Zhaojun; Chong, Wing Cheung; Wong, Kaming; Keung, Chiwing; Lau, Kei May
Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric
IEEE Electron Device Letters, v. 34, (6), 2013, article number 6513267, p. 738-740
Meng, Di; Lin, Shuxun; Wen, Chengpaul; Wang, Maojun; Wang, Jinyan; Hao, Yi Long; Zhang, Yaohui; Lau, Kei May; Wu, Wen Gang
Material and Device Characteristics of Metamorphic In0.53Ga0.47As MOSHEMTs Grown on GaAs and Si Substrates by MOCVD
IEEE Transactions on Electron Devices, v. 60, (12), December 2013, article number 6627951, p. 4112-4118
Li, Qiang; Zhou, Xiuju; Tang, Chak Wah; Lau, Kei May

Conference paper 8

All-silicon and Epitaxially Grown III-V-on-silicon Photodetectors for On-chip Optical Interconnection Applications
SPIE Proceedings, v. 8628, March 2013
Poon, Andrew Wing On; Feng, Shaoqi; Li, Yu; Geng, Yu; Lau, Kei May
Analysis on the CTLM and LTLM Applicability for GaN HEMTs Structure Alloyed Ohmic Contact Resistance Evaluation
IEEE Conference on Electron Devices and Solid-State Circuits, v. 2013, 2013, article number 6628128
Lin, Shuxun; Meng, Di; Wen, Cheng P.; Wang, Maojun; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Kei May
Blue, Green, and Yellow LEDs Grown on Si Substrates
Asia Communications and Photonics Conference 2013: OSA Technical Digest, Optical Society of America, 2013
Zou, Xinbo; Chong, Wing Cheung; Wong, Ka Ming; Ma, Jun; Lau, Kei May
Characteristics of Submicron-footprint TiO₂Based AlGaN/GaN MOSHEMT on SiC Substrate
IEEE Conference on Electron Devices and Solid-State Circuits, v. 2013, 2013, article number 6628138
Meng, Di; Lin, Shuxun; Wen, Cheng P.; Wang, Maojun; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Kei May; Wu, Wengang
Cost-effective and Eco-friendly LED System-on-a-Chip (SoC)
2013 10th China International Forum on Solid State Lighting, ChinaSSL 2013, 2013, article number 7177356, p. 235-238
Lau, Kei May; Choi, Hoiwai; Ki, Wing-Hung; Lee, Ricky Shi Wei; Mok, Philip Kwok Tai; Sin, Johnny Kin On; Yue, Chik Patrick
Effects of Pre-annealed Nickel Contact Layer on LED Device Performance Using NI/AG-based p-type Contacts
Asia Communications and Photonics Conference, ACP 2013, Beijing; China, 12 November 2013 through 15 November 2013
Chong, Wing Cheung; Lau, Kei May
Enhancement-mode AlN/GaN MOSHEMTs Fabricated by Selective Area Regrowth of AlGaN Barrier Layer
Proceedings of the 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2013), Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 199-202
Huang, Tongde; Zhu, Xueliang; Lau, Kei May
GaN Based Light-emitting Diode on Silicon (LEDoS) Micro-displays for BLU-free Full-color Projector Application
2013 IEEE Photonics Conference, IPC 2013, 2013, article number 6656489, p. 171-172
Liu, Zhaojun; Chong, Wing Cheung; Wong, Ka Ming; Lau, Kei May


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Article 14

30-nm Inverted In0.53Ga0.47As MOSHEMTs on Si Substrate Grown by MOCVD With Regrown Source/Drain
IEEE Electron Device Letters, v. 33, (10), October 2012, p. 1384-1386
Zhou, Xiuju; Li, Qiang; Tang, Chak Wah; Lau, Kei May
Effect of post-gate RTA on leakage current (I off) in GaN MOSHEMTs
Physica status solidi. C, Current topics in solid state physics, v. 9, (3-4), 2012, p. 919-922
Huang, Tongde; Wong, Ka Ming; Li, Ming; Zhou, Xiuju; Lau, Kei May
Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD
IEEE Electron Device Letters, v. 33, (8), August 2012, p. 1123-1125
Huang, Tongde; Zhu, Xueliang; Lau, Kei May
Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors
Optics letters, v. 37, (19), 1 October 2012, Pages 4035-4037
Feng, Shaoqi; Geng, Yu; Lau, Keimay; Poon, Andrew Wing On
Fabrication of 0.3-mu m T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition
Science China: Physics, Mechanics and Astronomy, v. 55, (4), April 2012, p. 644-648
Li, Haiou; Huang, Wei; Li, Qi; Li, Simin; Jiang, Xi; Tang, Chak Wah; Lau, Kei May; Zhang, Tianwen
Fabrication of 100-nm Metamorphic AlInAs/GaInAs HEMTs Grown on Si Substrates by MOCVD
IEEE Electron Device Letters, v. 33, (4), April 2012, p. 498-500
Li, Ming; Li, Haiou; Tang, Chak Wah; Lau, Kei May
High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array
Journal of materials science & technology, v. 28, (2), 2012, p. 132-136
Zhou, Wei; Li, Xiang; Xia, SuJing; Yang, Jie; Tang, Wu; Lau, Kei May
High-Performance Inverted In0.53Ga0.47As MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD
IEEE Electron Device Letters, v.33, (9), 2012, Sept, p. 1246-1248
Li, Qiang; Zhou, Xiuju; Tang, Chak Wah; Lau, Kei May
High-speed normal-incidence p-i-n InGaAs photodetectors grown on silicon substrates by MOCVD
IEEE Photonics Technology Letters, v. 24, (4), 2012, Article number 6086709, Pages 237-239
Gao, Yan; Zhong, Zhenyu; Feng, Shaoqi; Geng, Yu; Liang, Hu; Poon, Andrew Wing On; Lau, Kei May
Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate
Physica status solidi. C, Current topics in solid state physics, v. 9, (3-4), 2012, p. 473-475
Zhu, Xueliang; Ma, Jun; Huang, Tongde; Li, Ming; Wong, Ka Ming; Lau, Kei May
In0.53Ga0.47As MOS-HEMTs on GaAs and Si substrates grown by MOCVD
Physica Status Solidi. A, Applications and Materials Science, v. 209, (7), July 2012, p. 1380-1383
Zhou, Xiuju; Tang, Chak Wah; Li, Qiang; Lau, Kei May
Inverted-Type InGaAs Metal-Oxide-Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2 A/mm
Applied Physics Express, v.5, (10), 2012, Oct, article number 104201
Zhou, Xiuju; Li, Qiang; Tang, Chak Wah; Lau, Kei May
Low-leakage-current AlN/GaN MOSHFETs Using Al 2O 3 for increased 2DEG
IEEE Electron Device Letters, v. 33, (2), 2012, p. 212-214
Huang, Tongde; Zhu, Xue Liang; Wong, Ka Ming; Lau, Kei May
Thermally activated pop-in and indentation size effects in GaN films
Journal of physics. D, Applied physics, v. 45, (8), 2012, article number 085301
Lu, Junyong; Ren, Hang; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi

Conference paper 15

30nm Enhancement-mode In0.53Ga0.47As MOSFETs on Si Substrates Grown by MOCVD Exhibiting High Transconductance and Low On-resistance
2012 IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, 2012, Article number 6479153, pp. 32.5.1-32.5.4
Zhou, Xiuju; Li, Qiang; Tang, Chak Wah; Lau, Kei May
A novel GaN -based Monolithic SAW/HEMT Oscillator on Silicon
Ultrasonics Symposium (IUS), 2012 IEEE International, Dresden, 2012, p. 2206-2209
Lu, Xing; Ma, Jun; Zhu, Xueliang; Lee, Chi Ming; Yue, Chik Patrick; Lau, Kei May
Effect of antimony ambience on the interfacial misfit dislocations array in a GaSb epilayer grown on a GaAs substrate by MOCVD
2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, 2012, p. 5-9
Wu, Jie; Liu, Shaobin; Zhou, Wei; Tang, Wu; Lau, Kei May
Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors
IEEE International Conference on Group IV Photonics, USA, 2012, p. 51-53
Feng, Shaoqi; Geng, Yu; Lau, Kei May; Poon, Andrew Wing On
ETB-QW InAs MOSFET with Scaled Body for Improved Electrostatics
Technical digest - International Electron Devices Meeting, 2012, p. 32.3.1-32.3.4
Kim, Taewoo; Kim, Daehyun; Koh, Donghyi; Hill, Richard; Lee, Rinus T.P.; Wong, Manhoi; Cunningham, T.H.; Del Alamo, Jesús A.; Banerjee, Sanjay Kumar; Oktyabrsky, Serge R.; Greene, Andrew L.; Ohsawa, Y.; Trickett, Y.; Nakamura, G.; Li, Qiang; Lau, Kei May; Hobbs, Chris C.; Kirsch, Paul D.; Jammy, Raj
Growth characteristics of AlGaN/GaN HEMTs on patterned Si (111) substrates using double AIN interlayers by MOCVD
Advanced materials research, v. 396, 2012, p. 372-375
Wang, Yong; Yu, Naisen; Wang, Congshun; Lau, Kei May
Growth of butt-coupled p-i-n InGaAs waveguide photodetectors by MOCVD
2012 Electronic Materials Conference, Pennsylvania State University, PA, USA, 20 – 22 June 2012.
Geng, Yu; Feng, Shaoqi; Poon, Andrew Wing On; Lau, Kei May
High-Performance AlN/GaN MOSHEMTs with Regrown Ohmic Contacts by MOCVD
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012, p. 576-578
Huang, Tongde; Zhu, Xueliang; Lau, Kei May
Improved Crystalline Quality and Light Output Power of GaN-based Light-emitting Diodes Grown on Si Substrate by Buffer Optimization
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 9, (3-4), 2012, p. 572-575
Zou, Xinbo; Wong, Ka Ming; Yu, Naisen; Chen, Peng; Lau, Kei May
Improved GaN-based LED Grown on Silicon (111) Using Stress/Dislocation-Engineering Interlayers
XVI International Conference on MOVPE (ICMOVPE), Busan, Korea, May 20-25, 2012
Ma, Jun; Zhu, Xueliang; Wong, Ka Ming; Zou, Xinbo; Lau, Kei May
Improved resistivity of GaN with partially Mg-doped grown on Si (111) substrates by MOCVD
Advanced materials research, v. 442, 2012, p. 16-20
Wang, Yong; Yu, Naisen; Li, Ming; Lau, Kei May
Inverted-type InAlAs/InGaAs MOSHEMT with Regrown Source/Drain Exhibiting High Current and Low On-resistance
27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012, Boston, MA, United States, 23 - 26 April 2012, Code 100649
Li, Qiang; Zhou, Xiuju; Tang, Chak Wah; Lau, Kei May
Progress on the GaN-based LEDs and LDs
2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, 2012, p. 105-110
Wang, Yong; Zou, Yonggang; Ma, Xiaohui; Yu, Naisen; Deng, Dongmei; Lau, Kei May
Resistivity control in unintentionally doped GaN films grown on Si (111) substrates by MOCVD
Advanced materials research, v. 415, 2012, p. 1959-1963
Wang, Yong; Yu, Naisen; Li, Ming; Lau, Kei May
Silicon and hybrid silicon photodetectors for photonic integrated circuits
Asia Communications and Photonics Conference, Guangzhou, China, 2012, p. 1-1
Poon, Andrew Wing On; Feng, Shaoqi; Zhang, Yu; Li, Yu; Geng, Yu; Lau, Kei May


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Article 10

A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition
Applied physics letters, v. 99, (22), 2011, article number 221917
Zhou, Wei; Tang, Wu; Lau, Kei May
Active Matrix Programmable Monolithic Light Emitting Diodes on Silicon (LEDoS) Displays
Digest of Technical Papers - SID International Symposium, v. 42, (1 June 2011), 2011, Jun, p. 1215-1218
Liu, Zhaojun; Wong, Ka Ming; Chong, Wing Cheung; Lau, Kei May
Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD
IEEE electron device letters, v. 32, (9), September 2011, p. 1224-1226
Li, Haiou; Feng, Zhihong; Tang, Chak Wah; Lau, Kei May
Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition
Chinese Physics, v. 20, (6), June 2011, article number 068502
Li, Hai-Ou; Huang, Wei; Tang, Chak Wah; Deng, Xiao-Fang; May, Lau Kei
Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD
Chinese Physics Letters, v. 28, (5), May 2011, article number 057102
Wang, Yong; Yu, Naisen; Li, Ming; Lau, Kei May
Material characteristics of InGaN based light emitting diodes grown on porous Si substrates
Journal of Crystal Growth, v. 315, (1), 2011, Jan, p. 238-241
Deng, Dongmei; Chiu, Chinghsueh; Kuo, Haochung; Chen, Peng; Lau, Kei May
Metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD
Science China: Physics, Mechanics and Astronomy, v. 54, (10), 2011, p. 1815-1818
Li, Haiou; Huang, Wei; Li, Simin; Tang, Chak Wah; Lau, Kei May
Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate
IEEE journal of quantum electronics, v. 47, (7), July 2011, p. 899-906
Chiu, Chinghsueh; Lin, Chienchung; Deng, DongMei; Lin, Dawei; Li, Jinchai; Li, Zhenyu; Shu, Giawei; Lu, Tien-Chang; Shen, Jilin; Kuo, Haochung; Lau, Kei May
Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper
Optics express, v. 19, (14), July 2011, p. A956-A961
Lau, Kei May; Wong, Ka Ming; Zou, Xinbo; Chen, Peng
Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
AIP Advances, v. 1, (3), 2011, article number 032132
Lu, Junyong; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi

Conference paper 6

Active matrix programmable monolithic light emitting diodes on silicon (LEDoS) displays
49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011, v. 3, 2011, p. 1215-1218
Liu, Zhaojun; Wong, Ka Ming; Chong, Wing Cheung; Lau, Kei May
InAlAs/InGaAs Metamorphic HEMT and MOS-HEMT with Regrown Source/drain by MOCVD
69th Annual Device Research Conference, Santa Barbara, USA, 2011, Article number 5994437, p. 107-108
Zhou, Xiuju; Li, Qiang; Tang, Chak Wah; Lau, Kei May
InGaAs MOS-HEMTs on Si Substrates Grown by MOCVD
The 23rd International Conference on Indium Phosphide and Related Materials, Berlin, Germany, 2011, article number 5978338
Zhou, Xiuju; Tang, Chak Wah; Li, Qiang; Lau, Kei May
InP Lattice-Matched HEMT with Regrown Source/Drain by MOCVD
International Conference on Indium Phosphide and Related Materials, Berlin, Germany, 2011, article number 5978339
Li, Qiang; Li, Ming; Tang, Chak Wah; Lau, Kei May
Metamorphic p-i-n InGaAs photodetectors grown by MOCVD
2011 Electronic Materials Conference, Santa Barbara, USA, 22 - 24 June 2011
Gao, Yan; Zhong, Zhenyu; Liang, Hu; Geng, Yu; Feng, Shaoqi; Lau, Kei May; Poon, Andrew Wing On
Optical and electrical properties of GaN-based light emitting diodes grown on micro and nano-scale patterned Si substrate
Proceedings of SPIE--the international society for optical engineering, v. 8123, 2011
Chiu, Chinghsueh; Lin, Chienchung; Deng, DongMei; Kuo, Haochung; Lau, Kei May


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Article 5

Determining phonon deformation potentials of hexagonal GaN with stress modulation
Journal of Applied Physics, v. 108, (12), 2010, article number 123520
Lu, Junyong; Wang, ZhiJia; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi
Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)
Chinese Physics Letters, v. 27, (3), 2010, MAR
Wang, Hui; Liang, Hu; Wang, Yong; Ng, Karwei; Deng, Dongmei; Lau, Kei May
Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD
Science china-physics MECHANICS & ASTRONOMY, v. 53, (9), 2010, SEP, p. 1578-1581
Wang, Yong; Yu, NaiSen; Deng, DongMei; Li, Ming; Sun, Fei; Lau, Kei May
InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
Applied physics letters, v. 96, (20), 2010, MAY 17, article number 201106
Deng, Dongmei; Yu, Naisen; Wang, Yong; Zou, Xinbo; Kuo, Haochung; Chen, Peng; Lau, Kei May
Transfer of GaN-Based Light-Emitting Diodes From Silicon Growth Substrate to Copper
IEEE electron device letters, v. 31, (2), 2010, FEB, p. 132-134
Wong, Ka Ming; Zou, Xinbo; Chen, Peng; Lau, Kei May

Conference paper 19

0.3-μm gate-length metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2010, p. 1374-1376
Li, Haiou; Li, Ming; Tang, Chak Wah; Zhong, Zhenyu; Lau, Kei May
Epitaxial growth of III-nitride LEDs on porous Si substrates
The 11th National MOCVD Conference, Suzhou, China, Jan 13-14, 2010
Deng, Dongmei; Yu, Naisen; Wang, Yong; Zou, Xinbo; Chen, Peng; Lau, Kei May
GaN-based Blue LEDs Grown on Si and Transferred to Copper Substrates with Enhanced Output Power
37th International Symposium on Compound Semiconductors ISCS, Kagawa, Japan, May 30- June 4, 2010
Wong, Ka Ming; Zou, Xinbo; Chen, Peng; Lau, Kei May
GaN-based Lamb-wave Mass-sensors on Silicon Substrates
Proceedings of IEEE Sensors, 2010, p. 2008-2011
Lee, Chi Ming; Wong, Ka Ming; Chen, Peng; Lau, Kei May
Hetero-epitaxy of III-V compounds by MOCVD on silicon substrates
ECS Transactions, v. 28, (5), 2010, p. 227-231
Tang, Chak Wah; Zhong, Zhenyu; Lau, Kei May
High-performance implant-free InGaAs MOSFETs on GaAs substrate grown by MOCVD
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2010, p. 1377-1379
Zhou, Xiuju; Tang, Chak Wah; Li, Haiou; Chen, Peng; Lau, Kei May
High-resolution Light Emitting Diode on Silicon (LEDoS) Micro-display
International Workshop on Nitride Semiconductors 2010, Tampa, Florida, USA, September 20-24, 2010
Liu, Zhaojun; Liang, Hu; Chen, Peng; Lau, Kei May
III-Nitride Devices on Silicon Substrates by MOCVD
IEEE 2010 Lester Eastman Conference on High Performance Devices (LEC), RPI, Troy, NY, USA, August 3-5, 2010
Lau, Kei May
III-Nitride LEDs Grown on Porous Si Substrtes
15th International Conference on Metal Organic Vapor Phase Epitaxy, Lake Tahoe, USA, May 23-28, 2010
Deng, Dongmei; Yu, Naisen; Wang, Yong; Zou, Xinbo; Chen, Peng; Lau, Kei May
III-nitride LEDs on Si Substrates
SPIE Photonics West, San Francisco, CA, USA, 23 - 28 January 2010
Lau, Kei May
Improved AlGaN/GaN HEMTs grown on Si substrates by MOCVD
2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010, 2010, p. 68-71
Wang, Yong; Yu, Naisen; Deng, DongMei; Li, Ming; Sun, Fei; Lau, Kei May
In situ monitoring of GaAs grown on Si(100) by Metal Organic Chemical Vapor Deposition
15th International Conference on MOVPE, Lake Tahoe, Navada, USA, May 23-28, 2010
Zhong, Zhenyu; Lau, Kei May
In0.53Ga0.47As MOS-HEMTs on Si Substrates Grown by MOCVD
InP and Related Materials, Berlin, Germany, 23-27 May 2011
Zhou, Xiuju; Tang, Chak Wah; Li, Qiang; Lau, Kei May
Lamb-wave UV-sensors Fabricated with GaN-based Thin Films on Silicon Substrates
International Workshop on Nitride Semiconductors, Tampa, Florida, USA, September 19-24, 2010
Lee, Chi Ming; Wong, Ka Ming; Chen, Peng; Lau, Kei-May
Light Extraction Enhancement from GaN-based Thin-Film LEDs Grown on Silicon after Substrate Removal Using HNA Solution
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 7, (7-8), 2010, p. 2171-2173
Zou, Xinbo; Liang, Hu; Lau, Kei May
MOCVD of Device Structures
11th National Conference on MOCVD, Suzhou, China, January 13-16, 2010
Lau, Kei May
Optimization of GaAs buffer layer for high quality InP epitaxial layer grown on Si substrate for electronic devices applications by MOCVD
11th National MOCVD Conference, China, Suzhou, China, January 12-15, 2010
Zhong, Zhenyu; Tang, Chak Wah; Lau, Kei May
Will LED on Si become Mainstream Technology
International Electron Devices and Materials Symposium, Chungli, Taiwan, Nov 18-19, 2010
Lau, Kei May
Will LED on Si Become Mainstream Technology?
China International Optoelectronics Expo, Shenzhen, China, Septeember 6-9, 2010
Lau, Kei May


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Article 6

Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon
Applied physics letters, v. 94, (1), 2009, JAN 5, article number 012101
Chen, Peng; Chen, Winnie V.; Yu, Paul K.L.; Tang, Chak Wah; Lau, Kei May; Mawst, Luke James; Paulson, Charles A.; Kuech, Thomas F.; Lau, S.S.
HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice
Journal of Crystal Growth, v. 311, (10), 2009, MAY 1, p. 3089-3092
Li, Zhenyu; Lu, Tien-Chang; Kuo, Haochung; Wang, Shingchung; Lo, Minghua; Lau, Kei May
Improved GaN Grown on Si(111) Substrate Using Ammonia Flow Modulation on SiN (x) Mask Layer by MOCVD
Science in China Series e-technological sciences, v. 52, (9, Sp. Iss. SI), 2009, Sep, p. 2758-2761
Yu, NaiSen; Wang, Yong; Wang, Hui; Ng, KaiWei; Lau, Kei May
InP Layer Transfer with Masked Implantation
Electrochemical and SOLID STATE Letters, v. 12, (4), 2009, p. H149-H150
Chen, Wayne; Bandaru, Prabhakar R.; Tang, Chak Wah; Lau, Kei May; Kuech, Thomas F.; Lau, S.S.
Microbridge tests on gallium nitride thin films
Journal of micromechanics and microengineering, v. 19, (9), September 2009, article number 095019
Huang, Haiyou; Li, ZhiYing; Lu, Junyong; Wang, Zhi-Jia; Wang, Chong-Shun; Lau, Kei May; Chen, Kevin Jing; Zhang, Tongyi
Monolithic LED Microdisplay on Active Matrix Substrate Using Flip-Chip Technology
IEEE journal of selected topics in quantum electronics, v. 15, (4), 2009, JUL-AUG, p. 1298-1302
Liu, Zhao Jun; Wong, Ka Ming; Keung, Chi Wing; Tang, Chak Wah; Lau, Kei May

Conference paper 6

GaN Based Active Matrix Light Emitting Diode Array by Flip-Chip Technology
AOE 2008: ASIA OPTICAL FIBER COMMUNICATION AND OPTOELECTRONIC EXPOSITION AND CONFERENCE, 2009
Liu, Zhao Jun; Keung, Chi Wing; Lau, Kei May
GaN-based Blue LEDs Grown on Si and Transferred to Copper Substrates with Enhanced Output Power
36th International Symposium on Compound Semiconductors, Santa Barbara, USA, Aug 30 - Sept 2, 2009
Wong, Ka Ming; Zou, Xinbo; Chen, Peng; Lau, Kei May
GaN-based Monolithic LED Micro-arrays
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009), 2009, p. 730-731
Liu, Zhao Jun; Wong, Ka Ming; Tang, Chak Wah; Lau, Kei May
Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2009, p. 136-139
Tang, Chak Wah; Li, Haiou; Zhong, Zhenyu; Ng, Kai Lun; Lau, Kei May
III-nitride Based Ultraviolet LED Micro-array Module for Large-scale Display
37th International Symposium on Compound Semiconductors, Kagawa, Japan, May 31-June 4, 2010
Liu, Zhao Jun; Wong, Ka Ming; Keung, Chi Wing; Liang, Hu; Chen, Peng; Lau, Kei May
Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009), 2009, p. 234-235
Chen, Peng; Wong, Ka Ming; Lau, Kei May; Lau, S.S.


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Article 6

Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrate
Journal of Crystal Growth, v. 310, (23), 2008, NOV 15, p. 5170-5174
Chiu, Chinhua; Li, Zhenyu; Chao, Chuli; Lo, Minghua; Kuo, Haochung; Yu, Peichen; Lu, Tien-Chang; Wang, Shingchung; Lau, Kei May; Cheng, S.J.
Growth and characterizations of GaN-based LEDs grown on wet-etched stripe-patterned sapphire substrates
Journal of Electronic Materials, v. 37, (10), 2008, OCT, p. 1560-1564
Ng, Kar Wei; Hwang, Jung Min; Lau, Kei May
Low-frequency noise properties of double channel AlGaN/GaN HEMTs
Solid-state electronics, v. 52, (5), 2008, MAY, p. 606-611
Jha, Shrawan Kumar; Surya, Charles C.; Chen, Kevin Jing; Lau, Kei May; Jelencovie, E.
Metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by MOCVD
IEEE electron device letters, v. 29, (6), 2008, JUN, p. 561-564
Li, Haiou; Tang, Chak Wah; Lau, Kei May
Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template
Applied physics letters, v. 93, (8), 2008, AUG 25, article number 081108
Chiu, Chinghua; Yen, Hishsuan; Chao, Chuli; Li, Zhenyu; Yu, Peichen; Kuo, Haochung; Lu, Tien-Chang; Wang, Shingchung; Lau, Kei May; Cheng, S.J.
Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces
Journal of lightwave technology, v. 26, (9-12), 2008, MAY-JUN, p. 1455-1463
Lee, Yaju; Kuo, Haochung; Lu, Tien-Chang; Wang, Shingchung; Ng, Kar Wai; Lau, Kei May; Yang, Zupo; Chang, Allan Shih-Ping; Lin, Shawnyu

Conference paper 9

AlInAs/GaInAs mHEMTs on Silicon Substrates Grown by MOCVD
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, p. 723-726
Lau, Kei May; Tang, Chak Wah; Li, Haiou; Zhong, Zhenyu
Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 5, (6), 2008, p. 1892-1894
Li, Baikui; Chen, Jing; Lau, Kei May; Ge, Weikun; Wang, Jiannong
Epitaxial lateral overgrowth of GaN-based light emitting diodes on SiO ₂ nanorod-array patterned sapphire substrates by MOCVD
Proceedings of SPIE - The International Society for Optical Engineering, v. 7135, 2008
Chiu, Chinhua; Chao, Chuli; Lo, Minghua; Cheng, Yuhjen; Kuo, Haochung; Yu, Peichen; Lu, Tien-Chang; Wang, Shingchung; Lau, Kei May
Evidence of mobile holes on GaN HFET barrier layer surface - root cause of high power transistor amplifier current collapse
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, 2008, p. 1090-1093
Wen, Chengpaul; Wang, Jinyan; Hao, Yi Long; Zhang, Yaohui; Lau, Kei May
High quality GaAs film on Si (100) with excellent surface morphology grown by MOCVD
2008 Electronic Material Conference (EMC2008), University California, Santa Barbara, CA
Zhong, Zhenyu; Lau, Kei May
Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiN x mask layer by MOCVD
2008 Electronic Material Conference (EMC2008), CA, United States, 26 - 27 June 2008
Yu, Naisen; Wang, Yong; Wang, Hui; Ng, Kar Wai; Lau, Kei May
Investigation of the natural degradation of green LEDs
2008 Electronic Material Conference (EMC2008), University California, Santa Barbara, CA
Deng, Dongmei; Ng, Kar Wai; Liang, Hu; Qi, Yundong; Lau, Kei May
Metamorphic AlInAs/GaInAs HEMTs on Si Substrates by MOCVD
14th International Conference Metalorganic Vapor Phase Epitaxy IC MOVPE, Metz, France
Lau, Kei May; Tang, Chak Wah; Zhong, Zhenyu; Li, Haiou
Transient leakage current technique for MIS HEMT (A12O3/AlGaN/GaN) dielectric semiconductor interface property characterization
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, 2008, p. 1440-1442
Wen, Chengpaul; Wang, Jinyan; Chen, Hongwei; Hao, Yi Long; Lau, Kei May; Tang, Chak Wah


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Article 13

1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTs
Microwave and optical technology letters, v. 49, (6), 2007, JUN, p. 1360-1362
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yu Gang; Lau, Kei May; Chen, Kevin Jing
A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel Al0.3_Ga0.7_N/Al0.05_Ga0.95_{N/GaN HEMTs}
红外与毫米波学报=Journal of Infrared and Millimeter Waves, v. 2007, (04), 2007, p. 241-245
程知群; 蔡勇; 劉杰; 周玉剛; 劉稚美; 陳敬
Cathodoluminescence study of InGaN/GaN quantum-well LED structures grown on a Si substrate
Journal of Electronic Materials, v. 36, (9), 2007, SEP, p. 1144-1148
Xu, Jun; Chen, Li; Yu, Lisheng; Liang, Hu; Zhang, Baoshun; Lau, Kei May
DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
IEEE transactions on electron devices, v. 54, (1), January 2007
Liu, Jie; Zhou, Yugang; Zhu, Jia; Cai, Yong; Lau, Kei May; Chen, Kevin Jing
Device isolation by plasma treatment for planar integration of enhancement/depletion-mode AlGaN/GaN high electron mobility transistors
Japanese Journal of Applied Physics, v. 46, pt. 1, no. 4B, 24 Apr 2007, p. 2330-2333
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates
Journal of Crystal Growth, v. 298, (Sp. Iss. SI), 2007, JAN, p. 725-730
Zhang, Baoshun; Liang, Hu; Wang, Yong; Feng, Zhihong; Ng, Kar Wei; Lau, Kei May
High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits
IEEE electron device letters, v. 28, (5), 2007, MAY, p. 328-331
Cai, Yong; Cheng, Zhiqun; Yang, Zhenchuan; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Integration of enhancement and depletion-mode AlGaN/GaN MIS-HFETs by fluoride-based plasma treatment
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 204, (6), 2007, JUN, p. 2023-2027
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Metamorphic heterostructure InP/GaAsSb/InP HBTs on GaAs substrates by MOCVD
IEEE electron device letters, v. 28, (7), 2007, JUL, p. 539-542
Zhou, Wei; Tang, Chak Wah; Zhu, Jia; Lau, Kei May; Zeng, Yuping; Liu, Honggang; Tao, Nick G.M.; Bolognesi, Colombo R.
MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
Chinese Physics, v. 16, (11), 2007, NOV, p. 3494-3497
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yu Gang; Lau, Kei May; Chen, Kevin Jing
Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse
IEEE electron device letters, v. 28, (3), 2007, MAR, p. 189-191
Song, Di; Liu, Jie; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Surface acoustic wave device on AlGaN/GaN heterostructure using two-dimensional electron gas interdigital transducers
Applied physics letters, v. 90, (21), 2007, MAY 21, Article number 213506
Wong, King Yuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Temperature dependence of cathodoluminescence spectra and stress analysis of a GaN layer grown on a mesa structured Si substrate
Journal of applied physics, v. 102, (10), 2007, NOV 15, article number 104508
Xu, Jun; Chen, Li; Yu, Lisheng; Liang, Hu; Zhang, Baolong; Lau, Kei May

Conference paper 11

Comparison of Ni/Au, ITO, and ATO-based current spreading layers for near-ultraviolet light-emitting diodes
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 4, (7), 2007, p. 2646-2649
Chong, Wing Cheung; Lau, Kei May
Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment
Proceedings of International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007, 2007, p. 313-315
Li, Haiou; Tang, Chak Wah; Chen, Kevin Jing; Lau, Kei May
Fabrication of position-controllable GaN nanostructures
Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, 2007, p. 985-988
Yang, Zhen Chuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevinjing
Fabrication of Vertical Position-controllable GaN Nanowires on (111) Si Substrate
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 813-816
Wang, Congshun; Yang, Zhenchuan; Zhang, Baoshun; Wang, Yong; Wang, Hui; Lau, Kei May; Chen, Kevin Jing
Low noise distributed amplifier using composite-channel Al _0.3Ga0.7N/Al_0.05Ga_0.95N/GaN HEMTs
IET Conference Publications, (529 CP), 2007, p. 513-519
Cheng, Zhiqun; Wu, Yichao; Sun, Lingling; Lau, Kei May; Chen, Kevin Jing
Microwave noise characterization of enhancement-mode AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
65th DRC Device Research Conference, 2007, p. 77-78
Liu, Jie; Song, Di; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevinjing
Planar two-dimensional electron gas (2DEG) IDT SAW filter on AlGaN/GaN heterostructure
IEEE MTT-S International Microwave Symposium Digest, 2007, p. 2043-2046
Wong, Kingyuen; Tang, Wilson; Lau, Kei May; Chen, Kevin Jing
Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment
Technical Digest - International Electron Devices Meeting, IEDM, 2007, p. 389-392
Yi, Congwen; Wang, Ruonan; Huang, Wei; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS)
ECS Transactions, v. 11, (5), 2007, p. 225-230
Lee, Yaju; Chiu, Chinhua; Kuo, Haochung; Lu, Tien-Chang; Wang, Shingchung; Ng, Kar Wai; Lau, Kei May; Yang, Zupo; Chang, Allan S.P.; Lin, Shawnyu
SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabrication of suspended GaN microstructures
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p. 670-672
Yang, Zhen Chuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing
Two-dimensional Electron Gas (2DEG) IDT SAW Devices on AlGaN/GaN Heterostructure
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 1045-1048
Wong, Kingyuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing


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Article 12

AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
IEEE electron device letters, v. 27, (1), 2006, JAN, p. 10-12
Liu, Jie; Zhou, Yu Gang; Zhang, Jizhi; Lau, Kei May; Chen, Kevin Jing
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
IEEE transactions on electron devices, v. 53, (9), 2006, SEP, p. 2207-2215
Cai, Yong; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
IEEE transactions on electron devices, v. 53, (6), 2006, JUN, p. 1474-1477
Jia, Shuo; Cai, Yong; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing
Enhancement-mode AlGaN/GaN HEMTs with low on-resistance and low knee-voltage
IEICE transactions on electronics, v. E89C, (7), 2006, JUL, p. 1025-1030
Cai, Yong; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing
Enhancement-mode Si3N4/AlGaN/GaN MISHFETs
IEEE electron device letters, v. 27, (10), 2006, OCT, p. 793-795
Wang, Ruonan; Cai, Yong; Tang, Chi-Wai; Lau, Kei May; Chen, Kevin Jing
Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 203, (7), 2006, MAY, p. 1712-1715
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing
GaN-on-pattemed-silicon (GPS) technique for fabrication of GaN-based MEMS
Sensors and Actuators a-physical, v. 130, (Sp. Iss. SI), 2006, AUG 14, p. 371-378
Yang, Zhenchuan; Wang, Ruonan; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin J.
Influence of oxidation and annealing temperatures on quality of Ga2O3 film grown on GaN
Thin solid films, v. 515, (4), 2006, DEC 5, p. 2111-2115
Lin, Limin; Luo, Yi; Lai, Pui To; Lau, Kei May
Isoelectronic indium-surfactant-doped Al0.3Ga0.7N/GaN high electron mobility transistors
Applied physics letters, v. 88, (12), 2006, MAR 20
Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing; Lau, Kei May
Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique
Applied physics letters, v. 88, (4), 2006, JAN 23, article number 041913
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing
Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment
IEEE transactions on electron devices, v. 53, (9), 2006, SEP, p. 2223-2230
Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE electron device letters, v. 27, (8), 2006, AUG, p. 633-635
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing

Conference paper 13

A planar integration process for E/D-mode AlGaN/GaN HEMT DCFL integrated circuits
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, Article number 4110036, p. 261-264
Wang, Ruonan; Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch
Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2312-2316
Liu, Jie; Zhou, Yugang; Zhu, Jia; Lau, Kei May; Chen, Kevin Jing
Comparison of Ni/Au, Ag/ITO, and Ag/ATO Curent-spreading Layers for Violet Light-Emitting Diodes
Int. Workshop on Nitride Semiconductors, Kyoto, Japan, Oct 22-27, 2006
Chong, Wing Cheung; Lau, Kei May
Core Technologies for III-Nitride Integrated Microsensors
6th Emerging Information Technology Conference, Richardson, Texas, USA, Aug 10-13, 2006
Chen, Kevin Jing; Lau, Kei May
Effects of NO annealing on the characteristics of GaN MIS capacitor
2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 2006, p. 561-564
Lin, Limin; Lai, Pui To; Lau, Kei May
Effects of oxidation temperature on Ga₂O₃ film thermally grown on GaN
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, 2006, p. 605-608
Lin, Limin; Luo, Yi; Lai, Pui To; Lau, Kei May
Enhancement-Mode A1GaN/GaN Metal Insulator Semiconductor HFETs Using Fluoride-Based Plasma Treatment Technique
Int. Workshop on Nitride Semiconductors, Kyoto, Japan, Oct 22-27, 2006
Wang, Ruonan; Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2368-2372
Jia, Shuo; Cai, Yong; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing
GaN MENS by MOCVD Growth of GaN on Patterned Si Substrates and Wet Etching
21th Meeting of the Electrochemical Society, Chicago, Illinois, May 6-10, 2007
Yang, Zhenchuan; Zhang, Baoshun; Chen, Kevin Jing; Lau, Kei May
GaN-based Direct-Coupled FET Logic (DCFL) Digital Circuits Operating at 375 oC
2006 Int. Conf. on Solid State Devices and Materials, Yokahama, Japan, Sept 12-15, 2006
Cai, Y.; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor
Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC 2006), 2006, article number 4099867, p. 105-108
Jha, S.K.; Surya, C.; Chen. K.J.; Lau, K.M.
Normally-off AlGaN/GaN low-density-drain HEMTs (LDD-HEMT) with enhanced breakdown voltage and suppressed current collapse
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, 2007, p. 257-260
Song, Di; Liu, Jie; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Planar integration of SAW filter with HEMT on AlGaN/GaN heterostructure using fluoride-based plasma treatment
Proceedings - IEEE Ultrasonics Symposium, v. 1, 2006, p. 281-284
Wong, Kingyuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing


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Article 16

AlGaN-GaN double-channel HEMTs
IEEE transactions on electron devices, v. 52, (4), 2005, APR, p. 438-446
Chu, Rongming; Zhou, Yu Gang; Liu, Jie; Wang, Deliang; Chen, Kevin Jing; Lau, Kei May
AlGaN-GaNHEMTs on patterned silicon (111) substrate
IEEE electron device letters, v. 26, (3), March 2005, p. 130-132
Jia, Shuo; Dikme, Yilmaz Lmaz; Wang, Deliang; Chen, Kevin Jing; Lau, Kei May; Heuken, Michael
Broadband microwave noise characteristics of high-linearity composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
IEEE electron device letters, v. 26, (8), 2005, AUG, p. 521-523
Cheng, Zhiqun; Liu, Jie; Zhou, Yu Gang; Cai, Yong; Chen, Kevin Jing; Lau, Kei May
Comparison of blue and green InGaN/GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy
Applied physics letters, v. 86, (10), 2005, MAR 7, article number 101903
Qi, Yundong; Liang, Hu; Wang, Deliang; Lü, Zhendong; Tang, Chak Wah; Lau, Kei May
Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition
Journal of Electronic Materials, v. 34, (1), 2005, JAN, p. 112-118
Zhou, Yu Gang; Wang, Deliang; Chu, Rongming; Tang, Chak Wah; Qi, Yundong; Lü, Zhendong; Chen, Kevin Jing; Lau, Kei May
Doping concentration and structural dependences of the thermal stability of the 2DEG in GaN-based high-electron-mobility transistor structures
Japanese Journal of Applied Physics, v. 44, pt. 2 no. 1-7, 2005, p. L21-L23
Feng, Zhihong; Zhou, Yu Gang; Cai, Shujun; Lau, Kei May
Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy
Journal of Crystal Growth, 272, 1-4, December 2004
Qi, YuDong; Liang, Hu; Tang, Chak Wah; Lü, Zhendong; Lau, Kei May
Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates
IEEE photonics technology letters, v. 17, (9), 2005, SEP, p. 1812-1814
Feng, Zhihong; Lau, Kei May
Enhanced-performance of AlGaN-GaNHEMTs grown on grooved sapphire substrates
IEEE electron device letters, v. 26, (12), December 2005, p. 870-872
Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing; Lau, Kei May
Highly linear A1(0.3)Ga(0.7)N-A1(0.05)Ga(0.95)N-GaN composite-channel HEMTs
IEEE electron device letters, v. 26, (3), 2005, MAR, p. 145-147
Liu, Jie; Zhou, Yu Gang; Chu, Rongming; Cai, Yong; Chen, Kevin Jing; Lau, Kei May
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE electron device letters, v. 26, (7), 2005, JUL, p. 435-437
Cai, Yong; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May
III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films
Applied physics letters, v. 86, (3), 2005, JAN 17
Cai, Yong; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May
Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition
Journal of applied physics, v. 97, (5), 2005, MAR 1
Wang, Deliang; Jia, Shuo; Chen, Kevin Jing; Lau, Kei May; Dikme, Yilmaz Lmaz; Van Gemmern, Philipp; Lin, YC; Kalisch, Holger; Jansen, Rolf H.; Heuken, Michael
Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor
IEEE electron device letters, v. 26, (7), 2005, JUL, p. 432-434
Chu, Chun San; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May
Thermally activated carrier transfer processes in InGaN/GaN multi-quantum-well light-emitting devices
Journal of applied physics, v. 98, (2), 2005, p. 1-5
Yang, Chunlei; Ding, Lu; Wang, Jiannong; Fung, Kwok Kwong; Ge, Weikun; Liang, Hu; Yu, Lisheng; Qi, Yundong; Wang, Deliang; Lü, Zhendong; Lau, Kei May
低温近场光学显微术对InGaN／GaN多量子阱电致发光温度特性的研究
物理学报=Acta Physica Sinica, v. 2005, (11), 2005, p. 5344-5349
徐耿釗; 梁琥; 白永強; 劉紀美; 朱星

Conference paper 12

A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure
Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, 2005, p. 385-388
Chu, Chun San; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May
AlGaN/GaN HEMTs on Grooved Sapphire Substrate,'6th Int. Conf. on Nitride Semiconductors,(ICNS-6)
Bremen, Germany, Aug. 28-Sep. 2, 2005
Feng, ZhiHong; Cai, ShuJin; Chen, Kevin Jing; Lau, Kei May
Fabrication of Suspended GaN Microstructures Using GaN on Patterned Silicon (GPS) Technique
6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Yang, Z.; Wang, Rong; Jia, Shuo; Wang, Deliang; Zhang, Bao Shun; Chen, Kevin Jing; Lau, Kei May
GaN on Patterned Silicon (GPS) technique for fabrication of GaN-based MEMS
Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05, v. 1, 2005, p. 887-890
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Chen, Kevin Jing; Lau, Kei May
GaN on Patterned Silicon (GPS) technique for GaN-based integrated microsensors
Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 298-301
Yang, Zhen Chuan; Wang, Ruonan; Wang, Deliang; Zhang, Baoshun; Chen, Kevinjing; Lau, Kei May
Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth
Physica Status Solidi C: Conferences, v. 2, (7), 2005, p. 2663-2667
Zhou, Yugang; Chu, Rongming; Liu, Jie; Chen, Kevin Jing; Lau, Kei May
High-Performance Metamorphic InP/GaAsSb/InP “Type-II” DHBTs Grown on GaAs Substrates
2006 International Conference on Compound Semiconductor Manufacturing Technology, Vancouver, BC, Canada, Digest, p.157, April 24-27, 2006
Zeng, Yuping; Liu, Honggang; Tao, Nick G.M.; Bolognesi, Colombo R.; Zhou, Wei; Tang, Chak Wah; Lau, Kei May
MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates
2006 International Conference on Compound Semiconductor Manufacturing Technology, Vancouver, BC, Canada, Digest, p.243, April 24-27, 2006.
Tang, Chak Wah; Jiang, L.; Lau, Kei May; Chen, Kevin Jing
Monolithic integrated c-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 1112-1115
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing
Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits
Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 771-774
Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Chen, Kevinjing; Lau, Kei May
Reduced Gate-bias dependence of 2DEG mobility in a Composite-Channel HEMT
6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Zhu, Jia; Liu, J.; Zhou, Yu Gang; Cai, Yong; Chen, Kevin Jing; Lau, Kei May
Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Device Research Conference - Conference Digest, DRC, v. 2005, 2005, p. 179-180
Cai, Yong; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May


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Article 7

Al0.10Ga0.90As-GaAs microcoolers
IEEE Electron Device Letters, v. 25, (6), 2004, June, p. 345-347
Zhang, Jizhi; Anderson, Neal G.; Lau, Kei May
Characterization of GaN grown on patterned Si(111) substrates
Journal of Crystal Growth, v. 272, (1-4), 2004, DEC 10, p. 489-495
Wang, Deliang; Dikme, Yilmaz Lmaz; Jia, Shuo; Chen, Kevin Jing; Lau, Kei May; Van Gemmern, Philipp; Lin, YC; Kalisch, Holger; Jansen, RoIf H.; Heuken, Michael
Efficient wet etching of GaN and p-GaN assisted with chopped UV source
Superlattices and microstructures, v. 35, (1-2), 2004, JAN-FEB, p. 45-57
Hwang, Jungmin; Ho, KY; Hwang, ZH; Hung, Weihsiu; Lau, Kei May; Hwang, Hueyliang
Enhanced thermal stability of the two-dimensional electron gas in GaN/AlGaN/GaN heterostructures by Si3N4 surface-passivation-induced strain solidification
Applied physics letters, v. 85, (22), 2004, NOV 29, p. 5248-5250
Feng, Zhihong; Zhou, Yu Gang; Cai, Shujun; Lau, Kei May
GaAs Esaki junctions with autocompensated impurities in the n side by metalorganic chemical vapor deposition
Applied physics letters, v. 85, (19), 2004, NOV 8, p. 4415-4417
Zhang, Jizhi; Lau, Kei May
GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy
Journal of Crystal Growth, v. 272, (1-4), 2004, DEC 10, p. 327-332
Feng, Zhihong; Qi, Yundong; Lü, Zhendong; Lau, Kei May
Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN
Applied physics letters, v. 84, (10), 2004, MAR 8, p. 1710-1712
Kim, Hanki; Seong, Taeyeon; Adesida, Ilesanmi A.; Tang, Chak Wah; Lau, Kei May

Conference paper 8

Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity
Technical Digest - International Electron Devices Meeting, IEDM, 2004, p. 811-814
Liu, Jie; Zhou, Yugang; Chu, Rongming; Cai, Yong; Chen, Kevin Jing; Lau, Kei May
Dual wavelength emission InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy
12th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 12), Hawaii, USA, 30 May - 4 June 2004
Qi, Yu Dong; Liang, Hu; Lau, Kei May
Effect of different SiN x Passivation and Their Strain on the Reliability of GaN-Based HEMT Structures
2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25
Feng, Zhi Hong; Zhou, Yu Gang; Cai, Shu Jun; Lau, Kei May
GaN-Based Blue-Light-Emitting Diodes Grown and Fabricated on Patterned Sapphire Substrates Using Metalorganic Vapor Phase Epitaxy
12th Int. Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XII), Maui, Hawaii, USA, May 30-June 4
Feng, Zhihong; Qi, Yundong; Lü, Zhendong; Zhou, Yugang; Lau, Kei May
GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 3, 2004, p. 2257-2260
Chu, Chun San; Zhou, Yugang; Chu, Rongming; Chen, Kevin Jing; Lau, Kei May
Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT
2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25 2004
Chu, Rongming; Zhou, Yugang; Liu, Jie; Chen, Kevin Jing; Lau, Kei May
Thermal transfer of excess carriers from the GaN barrier to the InGaN quantum dots for efficient electroluminescence
AIP Conference Proceedings Volume 772, page 765 (2005), the 27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona, USA, 26-30 July 2004,
Yang, Chunlei; Liang, Hu; Yu, Lisheng; Qi, Yundong; Lau, Kei May; Wang, Jiannong; Fung, Kwok Kwong; Ge, Weikun
Thermally activated carriers transfer process for the success of InGaN/GaN multi-quantum well light emitting devices
The 27th International Conference on the Physics of Semiconductors, Flagstaff, AZ, JUL 26-30, 2004, v. 772, 2005, p. 765-766
Yang, Chunlei; Liang, H.; Yu, L.S.; Qi, Yudong; Wang, Deliang; Lu, Z.D.; Lau, Kei May; Wang, Jiannong; Fung, Kwok Kwong; Ge, Weikun


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Article 2

Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures
Physica Status Solidi C, Vol. 0, (7), 2003, p. 2400-2403
Chu, Rongming; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May
AlGaAs superlattice microcoolers
Applied physics letters, v. 83, (2), 2003, JUL 14, p. 374-376
Zhang, Jizhi; Anderson, Neal G.; Lau, Kei May

Conference paper 3

AlGaN/GaN/Graded-AlGaN double heterostructure HEMT
2003 Int. Conf. Solid-State Devices and Materials (SSDM2003), Tokyo, Japan, Sepetmber 16-18 2003, p. 918-919
Zhou, Y.G.; Chu, R.M.; Chen, K.J.; Lau, K.M.
Comparison of temperature dependent electroluminescence of InGaN/GaN and AlGaInP based LEDs
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, 2003, p. 196-199
Liang, Hu; Yu, Lisheng; Qi, Yundong; Wang, Deliang; Lü, Zhendong; Tang, Wilson; Lau, Kei May; Yang, Chunlei; Wang, Jiannong; Ge, Weikun
Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors
2003 Electronic Material Conference (EMC2003), Salt Lake City, Utah, USA, June 25-27 2003, p. 85
Chu, Rongming; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May


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Article 1

Charactersization of a novel GaAs-based microwave optical switch
Solid-State Electronics, v. 46, (10), October 2002, p. 1573-1577
Lau, Kei May; Wang, Hong; Zheng, H.Q.; Xiong, Y.Z.; Radhakrisnan, K.


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Article 2

OMVPE growth of P-type GaN using solution Cp2Mg
Journal of Electronic Materials, v. 30, (11), 2001, NOV, p. 1382-1386
Qi, Yundong; Musante, Charles F.; Lau, Kei May; Smith, Lesley M.; Odedra, Rajesh; Kanjolia, Ravi K.
Study of Schottky barrier of Ni on p-GaN
Applied physics letters, v. 79, (27), 2001, DEC 31, p. 4536-4538
Yu, Lisheng; Qiao, Dongjiang; Jia, L.; Lau, SS; Qi, Yundong; Lau, Kei May


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Article 3

Characteristic temperature study of GaAsP-AlGaAs tensile strained quantum well lasers
Journal of Applied Physics, v. 88, (9), 2000, p. 5400-5409
Tolliver, Todd R.; Anderson, Neal G.; Agahi, Farid; Lau, Kei May
Exciton dynamics and valence band mixing in tensile-strained semiconductor quantum wells
Semiconductor science and technology, v. 15, (2), 2000, p. 189-196
Pérez, Eduardo; Vi?a, Luis; Koteles, Emil S.; Lau, Kei May; Di Carlo, Aldo; Lugli, Paol
Intersubband absorption characteristics in OMVPE grown delta-doped GaAs/AlGAs multiple quantum well structures
Journal of Electronic Materials, v. 29, (2), 2000, p. 225-230
Lutz, Charles R.; Kanaley, Jason; Lau, Kei May


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Article 2

Dependence of polarization mode and threshold current on tensile strain in AIGaAs/GaAsP quantum well lasers
Solid-state electronics, v. 41, (4), 1997, p. 647-649
Agahi, Farid; Baliga, Arvind; Lau, Kei May; Anderson, Neal G.
Monolithic integration of a 94 GHz AlGaAs/GaAs 2-DEG mixer on quartz substrate by epitaxial lift-off
IEEE Transactions on Electron Devices, v. 44, (1), January 1997, p. 11-16
Basco, Ricardo; Prabhu, Ajay; Sigfrid Yngvesson, K.; Lau, Kei May


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Article 4

Exciton dynamics and spin relaxation in unstrained and tensile-strained quantum wells
Journal of the Optical Society of America. B, Optical physics, v. 13, (5), 1996, p. 994-999
Mu?oz, Leonardo G.; Pérez, Eduardo; Bellani, Vittorio; Zimmermann, Sven; Vi?a, Luis; Ploog, Klaus H.; Koteles, Emil S.; Lau, Kei May
Exciton dynamics and spin-flip in tensile strained quantum wells
Solid-state electronics, v. 40, (1-8), 1996, p. 737-740
Pérez, Eduardo; Bellani, Vittorio; Zimmermann, Sven; Mu?oz, Leonardo G.; Vi?a, Luis; Koteles, Emil S.; Lau, Kei May
Tensile strain and threshold currents in GaAsP-AlGaAs single-quantum-well lasers
IEEE journal of quantum electronics, v. 32, (1), 1996, p. 29-36
Baliga, Arvind; Agahi, Farid; Anderson, Neal G.; Lau, Kei May; Cadambi, Srihari
Tensile-strained barrier GaAsP/GaAs single quantum-well lasers
Applied physics letters, v. 68, (26), 1996, p. 3778-3780
Agahi, Farid; Baliga, Arvind; Lau, Kei May; Anderson, Neal G.

Conference paper 2

BALANCE - A flexible parallel load balancing system for heterogeneous computing systems and networks
IEEE INFOCOM '96 - FIFTEENTH ANNUAL JOINT CONFERENCE OF THE IEEE COMPUTER AND COMMUNICATIONS SOCIETIES: NETWORKING THE NEXT GENERATION, PROCEEDINGS VOLS 1-3, 1996, p. 896-903
Hui, Chi-Chung; Chanson, Samuel T.; Chui, Pui-Man; Lau, Kei May
Temperature characteristics of GaAsP/AlGaAs tensile strained quantum well lasers
IEEE Lasers & Electro-Optics Society Annual Meeting (LEOS), v. 1, 1996, p. 312-313
Tolliver, Todd R.; Anderson, Neal G.; Agahi, Farid; Lau, Kei May


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Article 3

High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser diodes
IEEE photonics technology letters, v. 7, (2), 1995, p. 140-143
Agahi, Farid; Lau, Kei May; Choi, Hongkyun; Baliga, Arvind; Anderson, Neal G.
Resonant tunneling injection quantum-well lasers
IEEE photonics technology letters, v. 7, (6), 1995, p. 596-598
Lutz, Charles R.; Agahi, Farid; Lau, Kei May
Valence band offsets in strained GaAs1-xPx/GaAs heterojunctions
Journal of Electronic Materials, v. 24, (6), 1995, p. 713-717
Anderson, Neal G.; Agahi, Farid; Baliga, Arvind; Lau, Kei May

Conference paper 1

Monolithic integration of a 94GHz AlGaAs/GaAs 2DEG mixer on quartz substrate by epitaxial lift-off
Annual Device Research Conference Digest, 1995, p. 38-39
Basco, Ricardo; Prabhu, Ajay; Yngvesson, Sigfrid; Lau, Kei May


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Article 4

Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures
Journal of Electronic Materials, v. 23, (7), 1994, p. 649-652
Hanson, Cynthia M.; Basco, Ricardo; Agahi, Farid; Lau, Kei May; Lareau, Richard T.; Monahan, Timothy P.
GaAs1-xPx/GaAs quantum-well structures with tensile-strained barriers
IEEE journal of quantum electronics, v. 30, (2), 1994, p. 459-465
Agahi, Farid; Lau, Kei May; Baliga, Arvind; Anderson, Neal G.
Improvement of gas-switching abruptness for atmospheric pressure organometallic vapor phase epitaxy
Journal of Crystal Growth, v. 139, (3-4), 1994, p. 344-350
Agahi, Farid; Lutz, Charles R.; Lau, Kei May
Magneto-optical Properties of biaxially Strained Quanmm Wells
Philosophical Magazine B, v. 70, (3), 1994, p. 397-408
Vi?a, Luis; Mu?oz, Leonardo G.; Mestres, N.; Koteles, Emil S.; Bertolet, Daniel C.; Lau, Kei May

Conference paper 2

Enhanced stimulated emission of excited states in quantum wells by resonant tunneling
IEEE LEOS Annual Meeting - Proceedings, v. 2, 1994, p. 387-388
Lutz Jr, Charles R.; Agahi, Farid; Lau, Kei May
Tensile-strained AlGaAs/GaAsP single quantum-well lasers
IEEE LEOS Annual Meeting - Proceedings, v. 1, 1994, p. 109-110
Agahi, Farid; Baliga, Arvind; Lau, Kei May; Choi, Hong K.; Anderson, Neal


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Article 8

Analysis of slow-wave transmission lines on multi-layered semiconductor structures including conductor loss
IEEE transactions on microwave theory and techniques, v. 41, (5), 1993, p. 824-829
Liou, Jenn-Chorng; Lau, Kei May
Comparison of electroabsorption in tensile-strained and lattice-matched GaAs(P)/AlGaAs quantum wells
Applied physics letters, v. 63, (26), 1993, p. 3616-3618
Gomatam, Badri N.; Anderson, Neal G.; Agahi, Farid; Musante, Charles F.; Lau, Kei May
Field-induced absorption edge merging in tensile strained GaAsP quantum wells
Applied physics letters, v. 62, (26), 1993, p. 3473-3475
Gomatam, Badri N.; Anderson, Neal G.; Agahi, Farid; Musante, Charles F.; Lau, Kei May
Focal Plane Arrays for Submillimeter Waves Using Two-Dimensional Electron Gas Elements
Remote Sensing Reviews, v. 8, 1993, p. 29
Yang, Jian-Xung; Lau, Kei May; Yngvesson, Sigfrid K.
High-quality two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures by LP-OMVPE
IEEE Transactions on Electron Devices, v. 40, (3), March 1993, p. 502-506
Agahi, Farid; Yang, Jian-Xun; Lau, Kei May; Yngvesson, Karl Sigfrid
Ultrahigh mobility two-dimensional electron gas in AlxGa 1-xAs/GaAs heterostructures by organometallic vapor phase epitaxy
Applied physics letters, v. 63, (14), 1993, p. 1960-1962
Basco, Ricardo; Agahi, Farid; Lau, Kei May
Valence-band-shape modification due to band coupling in strained quantum wells
Physical Review B, v. 47, (20), May 1993, p. 13926-13929
Vi?a, Luis; Mu?oz, Leonardo G.; Mestres, N.; Koteles, Emil S.; Ghiti, Ali; O'Reilly, Eoin P.O.; Bertolet, Daniel C.; Lau, Kei May
Wide-bandwidth electron bolometric mixers: a 2DEG prototype and potential for low-noise THz receivers
IEEE transactions on microwave theory and techniques, v. 41, (4), April 1993, p. 581-589
Yang, Jian-Xung; Agahi, Farid; Dai, Dong; Musante, Charles F.; Grammer, Wes; Lau, Kei May; Yngvesson, K. Sigfrid


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Article 4

Exciton Trapping in Strained GaAsP Quantum Wells
Semiconductor Science and Technology, v. 7, 1992, p. 170-172
Takiguchi, Yoshihiro; Shum, Kai; Alfano, Robert R.; Koteles, Emil S.; Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May
Magneto-optical properties of quantum wells under biaxial tensile strain
Surface science, v. 267, (1-3), 1992, p. 533-536
Vi?a, Luis; Mu?oz, Leonardo G.; Mestres, N.; Koteles, Emil S.; Bertolet, Daniel C.; Lau, Kei May
Optically pumped submillimeter wave semiconductor lasers
IEEE journal of quantum electronics, v. 28, (8), 1992, p. 1773-1777
Lau, Kei May; Xu, Wei
Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium
Journal of Electronic Materials, v. 21, (10), 1992, p. 947-953
Landini, Barabara E.; Agahi, Farid; Lau, Kei May

Conference paper 1

2DEG electron bolometric mixers: new results and potential for low-noise THz receivers
Proceedings of SPIE--the international society for optical engineering, v. 1929, 1992, p. 208-209
Yang, J.X.; Agahi, F.; Dai, D.; Musante, C.; Grammer, W.; Lau, K.M.; Yngvesson, K.S.


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Article 2

Effects of growth interruption on the optical properties of AIGaAs/GaAs and GaAs/InGaAs quantum wells grown by atmospheric pressure organometallic chemical vapor deposition
Journal of Electronic Materials, v. 20, (2), 1991, p. 197-201
Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May; Koteles, Emil S.
Patterned substrate epitaxy surface shapes
Journal of Crystal Growth, v. 108, (1-2), 1991, p. 73-88
Jones, Stephen H.; Seidel, Lisa K.; Lau, Kei May; Harold, Michael P.


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Article 3

Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition
Journal of Electronic Materials, v. 19, (9), 1990, p. 967-974
Bertolet, Daniel C.; Hsu, JungKuei; Agahi, Farid; Lau, Kei May
Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells
Surface science, v. 228, (1-3), 1990, p. 314-317
Koteles, Emil S.; Owens, Douglas A.; Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May
Solution to characteristics of planar transmission lines made of finite-thickness metal on multi-layer media
IEEE MTT-S International Microwave Symposium digest, v. 1, 1990, p. 179-182
Liou, Jennchorng; Lau, Kei May


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Conference paper 1

Insitu Surface Cleaning and Selective Oxidation in OMCVD Systems
15th International Symp on Gallium Arsenide And Related Compounds, Atlanta, US, 11-14 Sep 1988
Jones, Stephen H.; Lau, Kei May; Pouch, John J.


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Article 8

Effects of polyimide passivation on the photoluminescence of high-purity epitaxial GaAs
Journal of applied physics, v. 63, (3), 1988, p. 962-964
Hsu, JungKuei; Lau, Kei May
Exciton photoluminescence linewidths in very narrow AlGaAs/GaAs and GaAs/InGaAs quantum wells
Journal of applied physics, v. 64, (11), 1988, p. 6562-6564
Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May; Koteles, Emil S.; Owens, Douglas A.
In situ thermal oxidation for surface cleaning and mask generation prior to selective area epitaxy
Applied physics letters, v. 53, (21), 1988, p. 2068-2070
Jones, Stephen H.; Lau, Kei May
Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor deposition
Applied physics letters, v. 52, (4), 1988, p. 293-295
Bertolet, Daniel C.; Hsu, JungKuei; Jones, Stephen H.; Lau, Kei May
Saturation of light- and heavy-hole exciton energies in very narrow quantum wells
Physical Review B, v. 38, (14), November 1988
Koteles, Emil S.; Owens, Douglas A.; Bertolet, Daniel C.; Lau, Kei May
Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition
Applied physics letters, v. 53, (25), 1988, p. 2501-2503
Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May
Temperature Dependence and Persistent Conductivity of GaAs MESFET's with Superlattice Buffers
IEEE Transactions on Electron Devices, v. 35, (1), January 1988, p. 14-17
Liou, Jenn-Chorng; Lau, Kei May
Temperature stability of AlxGa1-xAs (0≤x≤1) thermal oxide masks for selective-area epitaxy
Journal of applied physics, v. 64, (2), 1988, p. 922-925
Jones, Stephen H.; Lau, Kei May; Pouch, John J.

Conference paper 1

Nondestructive Characterization Of MOCVD-Grown GaInAs/GaAs Using Rocking Curve And Topography
Proceedings of SPIE - The International Society for Optical Engineering, v. 877, May 1988, p. 41-51
Wie, Chu R.; Kim, H.M.; Lau, Kei May


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Article 5

AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor deposition
Journal of applied physics, v. 62, (1), 1987, p. 120-125
Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May
Mobility Profiling of GaAs Power FET's by Magnetotransconjuctance Measurements
IEEE Transactions on Electron Devices, v. 34, (4), April 1987, p. 920-925
Lau, Kei May; Liou, Jenn-Chorng
Photoluminescence characteristics of selectively grown GaAs and AlGaAs/GaAs quantum wells
Journal of applied physics, v. 62, (6), 1987, p. 2466-2469
Lau, Kei May; Jones, Stephen H.; Hsu, JungKuei; Bertolet, Daniel C.
SELECTIVE AREA GROWTH OF HIGH QUALITY GaAs BY OMCVD USING NATIVE OXIDE MASKS.
Journal of the Electrochemical Society, v. 134, (12), 1987, p. 3149-3155
Jones, Stephen H.; Lau, Kei May
Slow relaxation and electric field quenching of persistent conductivity in GaAs metal-semiconductor field-effect transistors with different buffer layer structures
Applied physics letters, v. 51, (24), 1987, p. 2010-2012
Liou, Jennchorng; Lau, Kei May


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Article 3

A new analytical technique of photoluminescence for optimization of organometallic chemical vapor deposition
Journal of applied physics, v. 60, (10), 1986, p. 3781-3784
Hsu, JungKuei; Jones, Stephen H.; Lau, Kei May
IVA-3 Parasitic Corrections for Mobility Profiling of Large-Periphery GaAs Power FET's
IEEE Transactions on Electron Devices, v. 33, (11), November 1986, p. 1850-1851
Lau, Kei May; Liou, Jennchorng
ROOM LIGHT: THE GREMLIN CLOUDING AMPLIFIER TESTS.
Microwaves & RF, v. 25, (10), 1986, p. 75-77
Liou, Jenn-Chorng; Lau, Kei May


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Conference paper 1

RELATIONSHIP OF MAGNETOTRANSCONDUCTANCE MOBILITY PROFILES AND RF PERFORMANCE OF GAAS FETS.
IEEE MTT-S International Microwave Symposium digest, 1985, p. 204-206
Chan, S.K.; Lau, Kei May; White, Paul M.


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Article 1

Uniform Deposition of GaAs in a Multiwafer Vapor-Phase Epitaxial System
IEEE Transactions on Electron Devices, v. 31, (8), August 1984, p. 1086-1089
Lau, Kei May; Dat, Rovindra


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Article 1

FIR Photoconductivity in Epitaxial InP
Infrared Physics, v. 23, 1983, p. 311
Lau, Kei May; Wilson, William L.


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Article 1

Screw-fastened Joints for Thermal Contact at Low Temperatures
Rev. Sci. Instrum., v. 50, 1979, p. 254
Lau, Kei May; Zimmermann, William Jr


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2016 42

1.3-μm InAs Quantum-dot Micro-disk Lasers on V-groove Patterned and Unpatterned (001) silicon
Optics Express, v. 24, (18), September 2016, p. 21038-21045
Li, Qiang; Wan, Yating; Liu, Alan; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn; Lau, Kei May Article
Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates
IEEE Electron Device Letters, v. 37, (9), September 2016, article number 7524000, p. 1158-1161
Zou, Xinbo; Zhang, Xu; Lu, Xing; Tang, Chakwah; Lau, Keimay Article
Clivorine, an Otonecine Pyrrolizidine Alkaloid from Ligularia Species, Impairs Neuronal Differentiation via NGF-Induced Signaling Pathway in Cultured PC12 Cells
Phytomedicine, v. 23, (9), August 2016, p. 931-938
Xiong, Aizhen; Yan, Artemis Lu; Bi, Wenchuan; Lam, Yin Ching; Chan, Kar Lun Gallant; Lau, Kei May; Dong, Ting Xia; Lin, Huangquan; Yang, Li; Wang, Zhengtao; Tsim, Karl Wah Keung Article
Coalescence of Planar GaAs Nanowires into Strain-free Three-dimensional Crystals on Exact (001) Silicon
Journal of Crystal Growth, v. 454, November 2016, p. 19-24
Li, Qiang; Jiang, Huaxing; Lau, Kei May Article
Design and Characterization of Active Matrix LED Microdisplays with Embedded Visible Light Communication Transmitter
Journal of Lightwave Technology, v. 34, (14), July 2016, p. 3449-3457
Li, Xianbo; Wu, Liang; Liu, Zhaojun; Hussain, Babar; Chong, Wing Cheung; Lau, Kei May; Yue, Patrick C. Article
Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique
Journal of Crystal Growth, v. 433, January 2016, p. 19-23
Shi, Bei; Lau, Kei May Article
Fabrication and Characterization of High-Voltage LEDs Using Photoresist-Filled-Trench Technique
Journal of Display Technology, v. 12, (4), April 2016, article number 7303888, p. 397-401
Zou, Xinbo; Cai, Yuefei; Chong, Wing Cheung; Lau, Kei May Article
Full-color pixelated-addressable light emitting diode on transparent substrate (LEDoTS) micro-displays by CoB
Journal of Display Technology, v. 12, (7), July 2016, article number 7386564, p. 724-746
Peng, Deng; Zhang, K.Zhang, Ke; Chao, Victor Shin Deh; Mo, Weijing; Lau, Kei May; Liu, Zhaojun Article
Fully Vertical GaN p-i-n DiodesUsing GaN-on-Si Epilayers
IEEE Electron Device Letters, v. 37, (5), May 2016, p. 636-639
Zou, Xinbo; Zhang, Xu; Lu, Xing; Tang, Chak Wah; Lau, Kei May Article
GaAs-InGaAs-GaAs Fin-Array Tunnel Diodes on (001) Si Substrates With Room-Temperature Peak-to-Valley Current Ratio of 5.4
IEEE Electron Device Letters, v. 37, (1), January 2016, article number 7323841, p. 24-27
Li, Qiang; Han, Yu; Lu, Xing; Lau, Kei May Article
Growing InGaAs Quasi-quantum Wires Inside Semi-rhombic Shaped Planar InP Nanowires on Exact (001) Silicon
Applied Physics Letters, v. 108, (24), June 2016, Article number 242105
Han, Yu; Li, Qiang; Chang, Shih-Pang; Hsu, Wen-Da; Lau, Kei May Article
Highly Ordered Horizontal Indium Gallium Arsenide/Indium Phosphide Multi-Quantum-Well in Wire Structure on (001) Silicon Substrates
Journal of Applied Physics, v. 120, (24), December 2016, article number 245701
Han, Yu; Li, Qiang; Lau, Kei May Article
Investigation of Photon-Generated Leakage Current for High-Performance Active Matrix Micro-LED Displays
IEEE Transactions on Electron Devices, v. 63, (12), December 2016, article number 7726032, p. 4832-4838
Zhang, Ke; Peng, Deng; Chong, Wing Cheung; Lau, Kei May; Liu, Zhaojun Article
Low-leakage High-breakdown Laterally Integrated HEMT-LED via n-GaN Electrode
IEEE Photonics Technology Letters, v. 28, (10), May 2016, article number 7416644, p. 1130-1133
Liu, Chao; Cai, Yuefei; Zou, Xinbo; Lau, Kei May Article
Mastering the Marriage of III-Vs and Silicon
Compound Semiconductor, v. 22, (1), 2016, Feb, p. 64-68
Li, Qiang; Lau, Kei May Article
Monolithic Integration of Enhancement-mode Vertical Driving Transistorson a Standard InGaN/GaN Light Emitting Diode Structure
Applied Physics Letters, v. 109, (5), August 2016, article number 053504
Lu, Xing; Liu, Chao; Jiang, Huaxing; Zou, Xinbo; Zhang, Anping; Lau, Kei May Article
Monolithic Integration of Tunnel Diode Based Inverters on Exact (001) Si Substrates
IEEE Electron Device Letters, v. 37, (6), June 2016, article number 7450138, p. 717-720
Han, Yu; Li, Qiang; Lau, Kei May Article
Off-state Drain Leakage Reduction by Post Metallization Annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Si
Physica Status Solidi (A) Applications and Materials Science, v. 213, (4), April 2016, p. 868-872
Jiang, Huaxing; Lu, Xing; Liu, Chao; Li, Qiang; Lau, Kei May Article
Off-state Leakage Current Reduction in AlGaN/GaN High Electron Mobility Transistors by Combining Surface Treatment and Post-gate Annealing
Semiconductor Science and Technology, v. 31, (5), April 2016, Article no. 055019
Lu, Xing; Jiang, Huaxing; Liu, Chao; Zou, Xinbo; Lau, Kei May Article
Optical crosstalk analysis of micro-pixelated GaN-based light-emitting diodes on sapphire and Si substrates
Physica Status Solidi (A) Applications and Materials Science, v. 213, (5), May 2016, p. 1193-1198
Li, K. H.; Cheung, Y. F.; Tang, Ching Wan; Zhao, C.; Lau, Kei May; Choi, Hoi Wai Article
Optically Pumped 1.3μm Room-temperature InAs Quantum-dot Micro-disk Lasers Directly Grown on (001) Silicon
Optics Letters, v. 41, (7), April 2016, p. 1664-1667
Wan, Yating; Li, Qiang; Liu, Alan; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn; Lau, Kei May Article
Optimization of a common buffer platform for monolithic integration of InGaN/GaN light emitting diodes and AlGaN/GaN high electron mobility transistors
Journal of Electronic Materials, v. 45, (4), April 2016, p. 2092-2101
Liu, Chao; Cai, Yuefei; Jiang, Huaxing; Lau, Kei May Article
Optimization of electrode structure for flip-chip HVLED via two-level metallization
Physica Status Solidi (A) Applications and Materials Science, v. 213, (5), May 2016, p. 1199-1203
Cai, Yuefei; Zou, Xinbo; Chong, Wing Cheung; Lau, Kei May Article
Selectable Synthesis of 2-D MoS₂ and Its Electronic Devices: From Isolated Triangular Islands to Large-Area Continuous Thin Film
IEEE Transactions on Nanotechnology, v. 15, (2), March 2016, article number 7398078, p. 310-317
Cho, Wai Ching; Wu, Kam Lam; Yip, Pak San; Wang, Xinsheng; Chai, Yang; Lau, Kei May Article
Sub-wavelength InAs Quantum Dot Micro-disk Lasers Epitaxially Grown on Exact Si (001) Substrates
Applied Physics Letters, v. 108, (22), May 2016, Article number 221101
Wan, Yating; Li, Qiang; Liu, Alan; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn; Lau, Kei May Article
Temperature Characteristics of Epitaxially Grown InAs Quantum Dot Micro-disk Lasers on Silicon for On-chip Light Sources
Applied Physics Letters, v. 109, (1), July 2016, article number 011104
Wan, Yating; Li, Qiang; Liu, Alan; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L.; Lau, Kei May Article
Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate
Applied Physics Express, v. 9, (3), March 2016, Article number 031001
Lu, Xing; Liu, Chao; Jiang, Huaxing; Zou, Xinbo; Zhang, Anping; Lau, Kei May Article
Vertical LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers and Au-Free Bonding
IEEE Transactions on Electron Devices, v. 63, (4), April 2016, article number 7412742, p. 1587-1593
Zou, Xinbo; Zhang, Xu; Chong, Wing Cheung; Tang, Chak Wah; Lau, Kei May Article
1-μm InAs Quantum Dot Micro-disk Lasers Directly Grown on Exact (001) Si
Conference Digest - IEEE International Semiconductor Laser Conference, December 2016, article number 7765705
Lau, Kei May; Wan, Yating; Li, Qiang; Liu, Alan Y.; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L. Conference paper
Efficient Use of Uniform GaN HVLEDs for Small Flicker General Illumination Applications with Coverter-free LED Drivers
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, August 2016, article number 7528729
Cai, Yuefei; Zou, Xinbo; Gao, Yuan; Li, Lisong; Mok, Philip K.T.; Lau, Kei May Conference paper
Fabrication and Improved Performance of AlGaN/GaN HEMTs with Regrown Ohmic Contacts and Passivation-first Process
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, August 2016, article number 7528722
Huang, Tongde; Liu, Chao; Bergsten, Johan; Jiang, Huaxing; Lau, Kei May; Rorsman, Niklas Conference paper
High Voltage Low Current Collapse AlGaN/GaN MISHEMTs with in-situ SiN Gate Dielectric
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, August 2016, article number 7528765
Jiang, Huaxing; Liu, Chao; Lu, Xing; Lau, Kei May Conference paper
Homogeneous and Heterogeneous Integration of GaN-based Light Emitting Diodes and Driving Transistors
7th IEEE International NAnoelectronics Conference (INEC) 2016, Chengdu, China, May 9-11, 2016
Liu, Zhaojun; Lau, Kei May Conference paper
InP Nanowire Arrays with Embedded InGaAs Quantum wells Grown on Patterned (001) Si Substrates
18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVIII), San Diego, 10-15 July 2016
Han, Yu; Li qiang; Chang shih-pang; Hsu wen-da; Lau, Kei May Conference paper
Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs
2016 International Conference on Compound Semiconductor Manufacturing Technology, Miami, Florida, USA, 16-19 May 2016
Yu, Kun; Liu, Chao; Jiang, Huaxing; Lu, Xing; Lau, Kei May; Zhang, Anping Conference paper
Low Leakage High Breakdown GaN MOSHEMTs on Si with a ZrO2 Gate Dielectric
CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, 2017
Jiang, Huaxing; Liu, Chao; Chen, Yuying; Tang,Chak Wah; Lau, Kei May Conference paper
Monolithically integrated GaN-based HEMT-LED and InGaN/GaN photodiodes for on-chip optical interconnects
28th International Conference on Indium Phosphide & Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, Japan, June 26-30, 2016
Liu, Chao; Jiang, Huaxing; Cai, Yuefei; Lau, Kei May Conference paper
Multi-layer InAs/InAlGaAs quantum dots embedded into InP on Si (001) substrate for dislocation filtering
18th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XVIII), San Diego, California, USA, 10-15 July 2016
Shi, Bei; Li, Qiang; Lau, Kei May Conference paper
Room Temperature CW 1.3 μm Single Mode Lasing of InAs Quantum Dot Micro-disk Lasers Grown on (001) Si
2016 Conference on Lasers and Electro-Optics, CLEO 2016, December 2016, article number 7788536
Wan, Yating; Li, Qiang; Liu, Alan; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn; Lau, Kei May Conference paper
Suppression of Current Collapse in AlGaN/GaN MISHEMTs using in-situ SiN Gate Dielectric and PECVD SiN Passivation
CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology, 2016, p. 289-291
Jiang, Huaxing; Liu, Chao; Lu, Xing; Lau, Kei May Conference paper
Switching Performance of Quasi-Vertical GaN-Based p-i-n Diodes on Si
International Workshop on Nitride Semiconductors (IWN 2016), 2-7 October 2016, p. 242-242
Zhang, Xu; Zou, Xinbo; Lau, Kei May; Tang, Chak Wah Conference paper
Voltage-Controlled Light Modulation Enabled by Monolithically Integrated HEMT-LED Device
International Workshop on Nitride Semiconductors (IWN 2016), Orlando, Florida, October 2-7, 2016
Cai, Yuefei; Zou, Xinbo; Liu, Chao; Lau, Kei May Conference paper

2015 29

Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiN_x Gate Dielectric
IEEE Transactions on Electron Devices, v. 62, (6), June 2015, article number 7093156, p. 1862-1869
Lu, Xing; Ma, Jun; Jiang, Huaxing; Liu, Chao; Xu, Peiqiang; Lau, Kei May Article
GaN-based LED micro-displays for wearable applications
Microelectronic Engineering, v. 148, December 2015, p. 98-103
Liu, Zhaojun; Chong, Wing Cheung; Wong, Ka Ming; Lau, Kei May Article
Growing Antiphase-domain-free GaAs Thin Films Out of Highly Ordered Planar Nanowire Arrays on Exact (001) Silicon
Applied Physics Letters, v. 106, (7), February 2015, article number 072105
Li, Qiang; Ng, Kar Wei; Lau, Kei May Article
Hetero-epitaxy of Lg = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications
Chinese Physics B, v. 24, (8), August 2015, article number 087305
Huang, Jie; Li, Ming; Zhao, Qian; Gu, Wenwen; Lau, Kei May Article
High-speed InGaAs photodetectors by selective-area MOCVD toward optoelectronic integrated circuits
IEEE Journal on Selected Topics in Quantum Electronics, v. 20, (6), November 2015, article number 2321278
Geng, Yu; Feng, Shaoqi; Poon, Andrew Wing On; Lau, Kei May Article
Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping
Journal of Crystal Growth, v. 414, March 2015, p. 243-247
Liu, Chao; Liu, Zhaojun; Huang, Tongde; Ma, Jun; Lau, Kei May Article
InAlGaAs/InAlAs MQWs on Si Substrate
IEEE Photonics Technology Letters, v. 27, (7), April 2015, p. 748-751
Shi, Bei; Li, Qiang; Wan, Yating; Ng, Kar Wei; Zou, Xinbo; Tang, Chak Wah; Lau, Kei May Article
InAs/GaAs Quantum Dots on GaAs-on-V-grooved-Si Substrate with High Optical Quality in the 1.3 μm Band
Applied Physics Letters, v. 107, (8), August 2015, article number 081106
Wan, Yating; Li, Qiang; Geng, Yu; Shi, Bei; Lau, Kei May Article
Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors
Applied Physics Letters, v. 106, (18), May 2015, article number 181110
Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May Article
MOVPE growth of in situ SiNx/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio
Journal of Crystal Growth, v. 414, March 2015, p. 237-242
Ma, Jun; Lu, Xing; Zhu, Xueliang; Huang, Tongde; Jiang, Huaxing; Xu, Peiqiang; Lau, Kei May Article
Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD
Chinese Physics B, v. 24, (7), July 2015, article number 078102
Huang, Jie; Li, Ming; Lau, Keimay Article
Reduced Expression of P2Y2 Receptor and Acetylcholinesterase at Neuromuscular Junction of P2Y1 Receptor Knock-out Mice
Journal of Molecular Neuroscience, v. 57, (3), November 2015, p. 446-451
Xu, Miranda Li; Bi, Wenchuan; Cheng, Kwan Wai; Mak, Shinghung; Yao, Ping; Luk, Wilson K.W.; Lau, Kei May; Cheng, Anthony W.M.; Tsim, Karl Wah Keung Article
Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology
Optics Express, v. 23, (25), December 2015, p. 32504-32515
Han, Hauvei; Lin, Huangyu; Lin, Chienchung; Chong, Wing Cheung; Li, Jieru; Chen, Kuoju; Yu, Peichen; Chen, Tengming; Chen, Huangming; Lau, Kei May; Kuo, Haochung Article
The Volatile Oil of Nardostachyos Radix et Rhizoma Induces Endothelial Nitric Oxide Synthase Activity in HUVEC Cells
PLoS ONE, v. 10, (2), February 2015, article number e0116761
Maiwulanjiang, Maitinuer; Bi, Wenchuan; Lee, Pinky Sum-chi; Xin, Guizhong; Miernisha, Abudureyimu; Lau, Kei May; Xiong, Aizhen; Li, Ning; Dong, Ting Xia; Aisa, Haji Akber Kber; Tsim, Karl Wah Keung Article
1.3 μm Photoluminescence from InAs/GaAs Quantum Dots on CMOS-compatible (001) Silicon by Metal-organic Chemical Vapor Deposition
International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Hokkaido, Japan, 27-30 September 2015
Wan, Yating; Li, Qiang; Geng, Yu; Lau, Kei May Conference paper
A Low Substrate Loss, Monolithically Integrated Power Inductor for Compact LED Drivers
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 53-56
Fang, Xiangming; Mak, Tsz Him; Gao, Yuan; Lau, Kei May; Mok, Philip Kwok Tai; Sin, Johnny Kin On Conference paper
An AMLED Microdisplay Driver SoC with Built-In 1.25-Mb/s VLC Transmitter
2015 Symposium on VLSI Circuits (VLSI Circuits 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. C328-C329
Wu, Liang; Li, Xianbo; Chong, Wing Cheung; Liu, Zhaojun; Che, Fengyu; Hussain, Babar; Lau, Kei May; Yue, Chik Patrick Conference paper
Buffer Structure Optimization of Monolithically Integrated HEMT-LED Using a Metal-Interconnection-Free Integration Scheme
57th Electronic Materials Conference (EMC), Columbus, Ohio, USA, 24-26 June 2015
Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May Conference paper
Control of Threshold Voltage in Ultrathin-barrier AlGaN/GaN based MISHEMTs with Low-frequency SiNx Gate Dielectric and Al2O3 Interfacial Layer
The 11th International Conference on Nitride Semiconductors (ICNS 2015), Beijing, China, 30 August - 4 September 2015
Jiang, Huaxing; Liu, Chao; Lu, Xing; Lau, Kei May Conference paper
Effect of high-temperature thermal treatment on AlGaN/GaN HEMT Epi for monolithic integration
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Ren, Jie; Liu, Chao; Lau, Kei May; Sin, Johnny K.O. Conference paper
Effects of Double-cap Technique on the Improvement of InAs/InAlGaAs/InP Quantum Dots Grown by Metal-organic Chemical Vapor Deposition
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials, Sapporo, 2015, 2015, p. 290-291
Shi, Bei; Lau, Kei May Conference paper
Enhanced optical performance of monolithically integrated HEMT-LED by buffer optimization
57th Electronic Materials Conference (EMC), Columbus, Ohio, USA, 24-26 June 2015
Liu, Chao; Cai, Yuefei; Lau, Kei May Conference paper
Fabrication of Large Area Flip-chip High Voltage LEDs with 2 Micron Gap
1th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Cai, Yuefei; Zou, Xinbo; Chong, Wing Cheung; Lau, Kei May Conference paper
GaAs/In0.2Ga0.8As Fin-Array-Esaki Tunnel Diodes Fabricated on (001) Silicon by Aspect Ratio Trapping
2015 International Conference on Solid State Devices and Materials, Sapporo, Japan, 27-30 September 2015
Li, Qiang; Han, Yu; Lau, Kei May Conference paper
High Performance Field Effect Transistors Based on Large Area Mos₂ Thin Films
2015 MRS Spring Meeting & Exhibit, San Francisco, CA, USA, 6-10 April 2015
Cho, Wai Ching; Wang, Xinsheng; Liu, Zhaojun; Chai, Yang; Lau, Kei May Conference paper
Improved Performance of AlGaN/GaN HEMTs by O2-plasma and HCl Surface Treatment
The 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, 30 August - 4 September 2015
Lu, Xing; Jiang, Huaxing; Liu, Chao; Lau, Kei May Conference paper
Off-state Drain Leakage Reduction by Post Metallization Annealing for Al₂O₃/GaN/AlGaN/GaN MOSHEMTs on Silicon
The 42nd International Symposium on Compound Semiconductors, Santa Barbara, Santa Barbara, California, USA, 28 June - 2 July 2015
Jiang, Huaxing; Lu, Xing; Liu, Chao; Lau, Kei May Conference paper
Off-state Leakage Current Reduction in AlGaN/GaN HEMTs by Combining Surface Treatment and PGA
The 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Lu, Xing; Jiang, Huaxing; Liu, Chao; Zou, Xinbo; Lau, Kei May Conference paper
Orderly Array of In-Plane GaAs Nanowires on Exact (001) Silicon for Antiphase-Domain-Free GaAs Thin Films
CS MANTECH 2015 - 2015 International Conference on Compound Semiconductor Manufacturing Technology, 2015, p. 71-74
Li, Qiang; Ng, Kar Wei; Lau, Kei May Conference paper

2014 26

Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition
Applied Physics Letters, v. 104, (3), January 2014, article number 032903
Lu, Xing; Ma, Jun; Jiang, Huaxing; Lau, Kei May Article
Defect Reduction in Epitaxial InP on Nanostructured Si (001) Substrates with Position-controlled Seed Arrays
Journal of Crystal Growth, v. 405, November 2014, p. 81-86
Li, Qiang; Ng, Kar Wei; Tang, Chak Wah; Lau, Kei May; Hill, Richard; Vert, Alexey Article
Enhancement-mode Lg = 50 nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with fmax surpassing 408 GHz
Solid-State Electronics, v. 99, 2014, p. 7-10
Li, Ming; Tang, Chak Wah; Li, Haiou; Lau, Kei May Article
Growth and Characterization of Horizontal GaN Wires on Silicon
Applied Physics Letters, v. 104, (26), June 2014, article number 262101
Zou, Xinbo; Lu, Xing; Lucas, Ryan; Kuech, Thomas F.; Choi, Jonathan W.; Gopalan, Padma; Lau, Kei May Article
Growth of Ultra-high Mobility In0.52Al0.48As/InxGa1-xAs (x >= 53%) Quantum Wells on Si Substrates using InP/GaAs Buffers by Metalorganic Chemical Vapor Deposition
Applied Physics Express, v. 7, (4), 2014, article number 045502
Li, Qiang; Tang, Chak Wah; Lau, Kei May Article
High-efficiency Blue and Green LEDs Grown on Si with 5 Micrometer Thick GaN Buffer
Physica Status Solidi (C): Current Topics in Solid State Physics, v. 11, (3-4), 2014, p. 730-733
Zou, Xinbo; Wong, Ka Ming; Chong, Wing Cheung; Ma, Jun; Lau, Kei May Article
In situ growth of SiNx as gate dielectric and surface passivation for AIN/GaN heterostructures by metalorganic chemical vapor deposition
Applied physics express, v. 7, (9), September 2014, article number 091002
Ma, Jun; Lu, Xing; Jiang, Huaxing; Liu, Chao; Lau, Kei May Article
In situ SiNx gate dielectric by MOCVD for low-leakage-current ultra-thin-barrier AlN/GaN MISHEMTs on Si
Physica Status Solidi (A) Applications and Materials Science, v. 211, (4), April 2014, p. 775-778
Lu, Xing; Ma, Jun; Liu, Zhaojun; Jiang, Huaxing; Huang, Tongde; Lau, Kei May Article
Lg = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD
Chinese Physics B, v. 23, (12), December 2014, article number 128102
Huang, Jie; Li, Ming; Tang, Chak Wah; Lau, Kei May Article
Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition
Applied physics letters, v. 105, (10), September 2014, article number 102911
Lu, Xing; Ma, Jun; Jiang, Huaxing; Liu, Chao; Lau, Kei May Article
Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition
Chinese Physics B, v. 23, (3), 2014, article number 038403
Li, Ming; Wang, Yong; Wong, Kaming; Lau, Kei May Article
Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD
IEEE Electron Device Letters, v. 35, (3), 2014, article number 6730671, p. 330-332
Liu, Zhaojun; Huang, Tongde; Ma, Jun; Liu, Chao; Lau, Kei May Article
Performance Enhancements of Flip-Chip Light-Emitting Diodes With High-Density n-Type Point-Contacts
IEEE Electron Device Letters, v. 35, (10), October 2014, article number 6894119, p. 1049-1051
Chong, Wing Cheung; Lau, Kei May Article
Quantification of the Transcripts Encoding Different Forms of AChE in Various Cell Types: Real-Time PCR Coupled with Standards in Revealing the Copy Number
Journal of Molecular Neuroscience, v. 53, (3), July 2014, p. 461-468
Bi, Wenchuan; Luk, Wilson K.W.; Campanari, Maria-Letizia; Liu, Yuen H.; Xu, Li; Lau, Kei May; Xu, Miranda Li; Choi, Chi Yan; Saez-valero, Javier; Tsim, Karl Wah Keung Article
Selective Epitaxial Growth of Monolithically Integrated GaN-based Light Emitting Diodes with AlGaN/GaN Driving Transistors
Applied Physics Letters, v. 104, (9), March 2014, article number 091103
Liu, Zhaojun; Ma, Jun; Huang, Tongde; Liu, Chao; Lau, Kei May Article
Self-aligned gate-last enhancement- and depletion-mode AlN/GaN MOSHEMTs on Si
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), 2014, p. 890-893
Huang, Tongde; Ma, Jun; Lu, Xing; Liu, Zhaojun; Zhu, Xueliang; Lau, Kei May Article
1700 pixels per inch (PPI) passive-matrix micro-LED display powered by ASIC
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, December 2014, article number 6978524
Chong, Wing Cheung; Cho, Wai Keung; Liu, Zhaojun; Wang, Chu Hong; Lau, Kei May Conference paper
Growth and Characterization of GaN Wires Grown on Nano-Scale Porous SiO₂ Patterned GaN/Si Templates
The 56th Electronic Materials Conference (EMC 2014), The University of California, Santa Barbara, USA, 25-27 June 2014
Zou, Xinbo; Lu, Xing; Lucas, Ryan; Kuech, Thomas F.; Choi, Jonathan W; Gopalan, Padma; Lau, Kei May Conference paper
Growth of Low Defect-density InP on Exact Si (001) Substrates by Metalorganic Chemical Vapor Deposition with Position-controlled Seed Arrays
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2014, article number 6880514
Li, Qiang; Tang, Chak Wah; Lau, Kei May; Hill, Richard; Vert, Alexey Conference paper
High performance self-aligned AlN/GaN MISHEMT with in-situ SiNx gate dielectric and regrown source/drain
CS MANTECH 2014 - 2014 International Conference on Compound Semiconductor Manufacturing Technology, 2014, p. 201-204
Lu, Xing; Ma, Jun; Xu, Peiqiang; Jiang, Huaxing; Lau, Kei May Conference paper
III-V-IV Integration Toward Electronics and Photonics Convergence on a Silicon Platform
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, January 2014, article number 7021190
Lau, Kei May; Li, Qiang Conference paper
Integrated Magnetics for Eco-friendly LED System-on-a-Chip Applications
The 4th International Power Supply on Chip Workshop (PwrSoC2014), Boston, Massachusetts, USA, 6-8 October 2014
Fang, Xiangming; Sin, Johnny Kin On; Lau, Kei May; Yue, Chik Patrick; Mok, Philip Kwok Tai Conference paper
Integration Scheme Toward LED System-on-a-Chip (SoC)
Solid-State and Organic Lighting, SOLED 2014; Energy Change Institute, Australian National UniversityCanberra, Australia, 2 December 2014 through 5 December 2014
Mak, Tsz Him; Liu, Zhaojun; Chong, Wing Cheung; Gao, Yuan; Fang, Xiangming; Sin, Johnny Kin On; Mok, Philip Kwok Tai; Lau, Kei May Conference paper
LED on silicon (LEDoS) microdisplays
Solid-State and Organic Lighting, SOLED 2014, Australia : Optical Society of America (OSA), 2014
Lau, Kei May Conference paper
Monolithic Integration of III-nitride LEDs and Driver HEMT Transistors by MOCVD
Asia Communications and Photonics Conference, ACPC 2014, November 2014
Lau, Kei May Conference paper
Through Silicon Underfill Dispensing for 3D Die/Interposer Stacking
Proceedings - Electronic Components and Technology Conference, September 2014, article number 6897397, p. 919-924
Le, Fuliang; Lee, Ricky Shi-wei; Lau, Kei May; Yue, Chik Patrick; Sin, Johnny Kin On; Mok, Philip Kwok Tai; Ki, Wing Hung; Choi, Hoi Wai Conference paper

2013 19

360 PPI Flip-Chip Mounted Active Matrix Addressable Light Emitting Diode on Silicon (LEDoS) Micro-Displays
IEEE/OSA Journal of Display Technology, v. 9, (8), 2013, article number 6502265, p. 678-682
Liu, Zhaojun; Chong, Wing Cheung; Wong, Ka Ming; Lau, Kei May Article
A GaN-Based Lamb-Wave Oscillator on Silicon for High-Temperature Integrated Sensors
IEEE Microwave and Wireless Components Letters, v. 23, (6), 2013, article number 6514898, p. 318-320
Lu, Xing; Ma, Jun; Yue, Chik Patrick; Lau, Kei May Article
A novel BLU-free full-color LED projector using LED on silicon micro-displays
IEEE Photonics Technology Letters, v. 25, (23), 2013, article number 6626565, p. 2267-2270
Liu, Zhaojun; Chong, Wing Cheung; Wong, Ka Ming; Tam, Ka Ho; Lau, Kei May Article
A Novel Full-Color 3LED Projection System using R-G-B Light Emitting Diodes on Silicon (LEDoS) Micro-displays
Digest of Technical Papers - SID International Symposium, v. 44, (1), 2013, p. 838-841
Chong, Wing Cheung; Wong, Ka Ming; Liu, Zhaojun; Lau, Kei May Article
DC and RF Performance of Gate-Last AlN/GaN MOSHEMTs on Si With Regrown Source/Drain
IEEE Transactions on Electron Devices, v. 60, (10), 2013, article number 6576811, p. 3019-3024
Huang, Tongde; Liu, Zhao Jun; Zhu, Xueliang; Ma, Jun; Lu, Xing; Lau, Kei May Article
GaN-Based S-0-Wave Sensors on Silicon for Chemical and Biological Sensing in Liquid Environments
IEEE Sensors Journal, v. 13, (4), 2013, article number 6374634, p. 1245-1251
Lu, Xing; Lee, Chi Ming; Wu, Shu Yuen; Ho, Ho Pui; Lau, Kei May Article
High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates
IEEE Electron Device Letters, v. 34, (7), 2013, article number 6521369, p. 903-905
Zou, Xinbo; Wong, Ka Ming; Zhu, Xueliang; Chong, Wing Cheung; Ma, Jun; Lau, Kei May Article
Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers
Journal of Crystal Growth, v. 370, May 2013, p. 265-268
Ma, Jun; Zhu, Xueliang; Wong, Ka Ming; Zou, Xinbo; Lau, Kei May Article
Investigation of Forward Voltage Uniformity in Monolithic Light-Emitting Diode Arrays
IEEE Photonics Technology Letters, v. 25, (13), 2013, article number 6516916, p. 1290-1293
Liu, Zhaojun; Chong, Wing Cheung; Wong, Kaming; Keung, Chiwing; Lau, Kei May Article
Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric
IEEE Electron Device Letters, v. 34, (6), 2013, article number 6513267, p. 738-740
Meng, Di; Lin, Shuxun; Wen, Chengpaul; Wang, Maojun; Wang, Jinyan; Hao, Yi Long; Zhang, Yaohui; Lau, Kei May; Wu, Wen Gang Article
Material and Device Characteristics of Metamorphic In0.53Ga0.47As MOSHEMTs Grown on GaAs and Si Substrates by MOCVD
IEEE Transactions on Electron Devices, v. 60, (12), December 2013, article number 6627951, p. 4112-4118
Li, Qiang; Zhou, Xiuju; Tang, Chak Wah; Lau, Kei May Article
All-silicon and Epitaxially Grown III-V-on-silicon Photodetectors for On-chip Optical Interconnection Applications
SPIE Proceedings, v. 8628, March 2013
Poon, Andrew Wing On; Feng, Shaoqi; Li, Yu; Geng, Yu; Lau, Kei May Conference paper
Analysis on the CTLM and LTLM Applicability for GaN HEMTs Structure Alloyed Ohmic Contact Resistance Evaluation
IEEE Conference on Electron Devices and Solid-State Circuits, v. 2013, 2013, article number 6628128
Lin, Shuxun; Meng, Di; Wen, Cheng P.; Wang, Maojun; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Kei May Conference paper
Blue, Green, and Yellow LEDs Grown on Si Substrates
Asia Communications and Photonics Conference 2013: OSA Technical Digest, Optical Society of America, 2013
Zou, Xinbo; Chong, Wing Cheung; Wong, Ka Ming; Ma, Jun; Lau, Kei May Conference paper
Characteristics of Submicron-footprint TiO₂Based AlGaN/GaN MOSHEMT on SiC Substrate
IEEE Conference on Electron Devices and Solid-State Circuits, v. 2013, 2013, article number 6628138
Meng, Di; Lin, Shuxun; Wen, Cheng P.; Wang, Maojun; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Kei May; Wu, Wengang Conference paper
Cost-effective and Eco-friendly LED System-on-a-Chip (SoC)
2013 10th China International Forum on Solid State Lighting, ChinaSSL 2013, 2013, article number 7177356, p. 235-238
Lau, Kei May; Choi, Hoiwai; Ki, Wing-Hung; Lee, Ricky Shi Wei; Mok, Philip Kwok Tai; Sin, Johnny Kin On; Yue, Chik Patrick Conference paper
Effects of Pre-annealed Nickel Contact Layer on LED Device Performance Using NI/AG-based p-type Contacts
Asia Communications and Photonics Conference, ACP 2013, Beijing; China, 12 November 2013 through 15 November 2013
Chong, Wing Cheung; Lau, Kei May Conference paper
Enhancement-mode AlN/GaN MOSHEMTs Fabricated by Selective Area Regrowth of AlGaN Barrier Layer
Proceedings of the 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2013), Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 199-202
Huang, Tongde; Zhu, Xueliang; Lau, Kei May Conference paper
GaN Based Light-emitting Diode on Silicon (LEDoS) Micro-displays for BLU-free Full-color Projector Application
2013 IEEE Photonics Conference, IPC 2013, 2013, article number 6656489, p. 171-172
Liu, Zhaojun; Chong, Wing Cheung; Wong, Ka Ming; Lau, Kei May Conference paper

2012 29

30-nm Inverted In0.53Ga0.47As MOSHEMTs on Si Substrate Grown by MOCVD With Regrown Source/Drain
IEEE Electron Device Letters, v. 33, (10), October 2012, p. 1384-1386
Zhou, Xiuju; Li, Qiang; Tang, Chak Wah; Lau, Kei May Article
Effect of post-gate RTA on leakage current (I off) in GaN MOSHEMTs
Physica status solidi. C, Current topics in solid state physics, v. 9, (3-4), 2012, p. 919-922
Huang, Tongde; Wong, Ka Ming; Li, Ming; Zhou, Xiuju; Lau, Kei May Article
Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD
IEEE Electron Device Letters, v. 33, (8), August 2012, p. 1123-1125
Huang, Tongde; Zhu, Xueliang; Lau, Kei May Article
Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors
Optics letters, v. 37, (19), 1 October 2012, Pages 4035-4037
Feng, Shaoqi; Geng, Yu; Lau, Keimay; Poon, Andrew Wing On Article
Fabrication of 0.3-mu m T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition
Science China: Physics, Mechanics and Astronomy, v. 55, (4), April 2012, p. 644-648
Li, Haiou; Huang, Wei; Li, Qi; Li, Simin; Jiang, Xi; Tang, Chak Wah; Lau, Kei May; Zhang, Tianwen Article
Fabrication of 100-nm Metamorphic AlInAs/GaInAs HEMTs Grown on Si Substrates by MOCVD
IEEE Electron Device Letters, v. 33, (4), April 2012, p. 498-500
Li, Ming; Li, Haiou; Tang, Chak Wah; Lau, Kei May Article
High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array
Journal of materials science & technology, v. 28, (2), 2012, p. 132-136
Zhou, Wei; Li, Xiang; Xia, SuJing; Yang, Jie; Tang, Wu; Lau, Kei May Article
High-Performance Inverted In0.53Ga0.47As MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD
IEEE Electron Device Letters, v.33, (9), 2012, Sept, p. 1246-1248
Li, Qiang; Zhou, Xiuju; Tang, Chak Wah; Lau, Kei May Article
High-speed normal-incidence p-i-n InGaAs photodetectors grown on silicon substrates by MOCVD
IEEE Photonics Technology Letters, v. 24, (4), 2012, Article number 6086709, Pages 237-239
Gao, Yan; Zhong, Zhenyu; Feng, Shaoqi; Geng, Yu; Liang, Hu; Poon, Andrew Wing On; Lau, Kei May Article
Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate
Physica status solidi. C, Current topics in solid state physics, v. 9, (3-4), 2012, p. 473-475
Zhu, Xueliang; Ma, Jun; Huang, Tongde; Li, Ming; Wong, Ka Ming; Lau, Kei May Article
In0.53Ga0.47As MOS-HEMTs on GaAs and Si substrates grown by MOCVD
Physica Status Solidi. A, Applications and Materials Science, v. 209, (7), July 2012, p. 1380-1383
Zhou, Xiuju; Tang, Chak Wah; Li, Qiang; Lau, Kei May Article
Inverted-Type InGaAs Metal-Oxide-Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2 A/mm
Applied Physics Express, v.5, (10), 2012, Oct, article number 104201
Zhou, Xiuju; Li, Qiang; Tang, Chak Wah; Lau, Kei May Article
Low-leakage-current AlN/GaN MOSHFETs Using Al 2O 3 for increased 2DEG
IEEE Electron Device Letters, v. 33, (2), 2012, p. 212-214
Huang, Tongde; Zhu, Xue Liang; Wong, Ka Ming; Lau, Kei May Article
Thermally activated pop-in and indentation size effects in GaN films
Journal of physics. D, Applied physics, v. 45, (8), 2012, article number 085301
Lu, Junyong; Ren, Hang; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi Article
30nm Enhancement-mode In0.53Ga0.47As MOSFETs on Si Substrates Grown by MOCVD Exhibiting High Transconductance and Low On-resistance
2012 IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, 2012, Article number 6479153, pp. 32.5.1-32.5.4
Zhou, Xiuju; Li, Qiang; Tang, Chak Wah; Lau, Kei May Conference paper
A novel GaN -based Monolithic SAW/HEMT Oscillator on Silicon
Ultrasonics Symposium (IUS), 2012 IEEE International, Dresden, 2012, p. 2206-2209
Lu, Xing; Ma, Jun; Zhu, Xueliang; Lee, Chi Ming; Yue, Chik Patrick; Lau, Kei May Conference paper
Effect of antimony ambience on the interfacial misfit dislocations array in a GaSb epilayer grown on a GaAs substrate by MOCVD
2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, 2012, p. 5-9
Wu, Jie; Liu, Shaobin; Zhou, Wei; Tang, Wu; Lau, Kei May Conference paper
Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors
IEEE International Conference on Group IV Photonics, USA, 2012, p. 51-53
Feng, Shaoqi; Geng, Yu; Lau, Kei May; Poon, Andrew Wing On Conference paper
ETB-QW InAs MOSFET with Scaled Body for Improved Electrostatics
Technical digest - International Electron Devices Meeting, 2012, p. 32.3.1-32.3.4
Kim, Taewoo; Kim, Daehyun; Koh, Donghyi; Hill, Richard; Lee, Rinus T.P.; Wong, Manhoi; Cunningham, T.H.; Del Alamo, Jesús A.; Banerjee, Sanjay Kumar; Oktyabrsky, Serge R.; Greene, Andrew L.; Ohsawa, Y.; Trickett, Y.; Nakamura, G.; Li, Qiang; Lau, Kei May; Hobbs, Chris C.; Kirsch, Paul D.; Jammy, Raj Conference paper
Growth characteristics of AlGaN/GaN HEMTs on patterned Si (111) substrates using double AIN interlayers by MOCVD
Advanced materials research, v. 396, 2012, p. 372-375
Wang, Yong; Yu, Naisen; Wang, Congshun; Lau, Kei May Conference paper
Growth of butt-coupled p-i-n InGaAs waveguide photodetectors by MOCVD
2012 Electronic Materials Conference, Pennsylvania State University, PA, USA, 20 – 22 June 2012.
Geng, Yu; Feng, Shaoqi; Poon, Andrew Wing On; Lau, Kei May Conference paper
High-Performance AlN/GaN MOSHEMTs with Regrown Ohmic Contacts by MOCVD
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012, p. 576-578
Huang, Tongde; Zhu, Xueliang; Lau, Kei May Conference paper
Improved Crystalline Quality and Light Output Power of GaN-based Light-emitting Diodes Grown on Si Substrate by Buffer Optimization
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 9, (3-4), 2012, p. 572-575
Zou, Xinbo; Wong, Ka Ming; Yu, Naisen; Chen, Peng; Lau, Kei May Conference paper
Improved GaN-based LED Grown on Silicon (111) Using Stress/Dislocation-Engineering Interlayers
XVI International Conference on MOVPE (ICMOVPE), Busan, Korea, May 20-25, 2012
Ma, Jun; Zhu, Xueliang; Wong, Ka Ming; Zou, Xinbo; Lau, Kei May Conference paper
Improved resistivity of GaN with partially Mg-doped grown on Si (111) substrates by MOCVD
Advanced materials research, v. 442, 2012, p. 16-20
Wang, Yong; Yu, Naisen; Li, Ming; Lau, Kei May Conference paper
Inverted-type InAlAs/InGaAs MOSHEMT with Regrown Source/Drain Exhibiting High Current and Low On-resistance
27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012, Boston, MA, United States, 23 - 26 April 2012, Code 100649
Li, Qiang; Zhou, Xiuju; Tang, Chak Wah; Lau, Kei May Conference paper
Progress on the GaN-based LEDs and LDs
2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, 2012, p. 105-110
Wang, Yong; Zou, Yonggang; Ma, Xiaohui; Yu, Naisen; Deng, Dongmei; Lau, Kei May Conference paper
Resistivity control in unintentionally doped GaN films grown on Si (111) substrates by MOCVD
Advanced materials research, v. 415, 2012, p. 1959-1963
Wang, Yong; Yu, Naisen; Li, Ming; Lau, Kei May Conference paper
Silicon and hybrid silicon photodetectors for photonic integrated circuits
Asia Communications and Photonics Conference, Guangzhou, China, 2012, p. 1-1
Poon, Andrew Wing On; Feng, Shaoqi; Zhang, Yu; Li, Yu; Geng, Yu; Lau, Kei May Conference paper

2011 16

A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition
Applied physics letters, v. 99, (22), 2011, article number 221917
Zhou, Wei; Tang, Wu; Lau, Kei May Article
Active Matrix Programmable Monolithic Light Emitting Diodes on Silicon (LEDoS) Displays
Digest of Technical Papers - SID International Symposium, v. 42, (1 June 2011), 2011, Jun, p. 1215-1218
Liu, Zhaojun; Wong, Ka Ming; Chong, Wing Cheung; Lau, Kei May Article
Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD
IEEE electron device letters, v. 32, (9), September 2011, p. 1224-1226
Li, Haiou; Feng, Zhihong; Tang, Chak Wah; Lau, Kei May Article
Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition
Chinese Physics, v. 20, (6), June 2011, article number 068502
Li, Hai-Ou; Huang, Wei; Tang, Chak Wah; Deng, Xiao-Fang; May, Lau Kei Article
Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD
Chinese Physics Letters, v. 28, (5), May 2011, article number 057102
Wang, Yong; Yu, Naisen; Li, Ming; Lau, Kei May Article
Material characteristics of InGaN based light emitting diodes grown on porous Si substrates
Journal of Crystal Growth, v. 315, (1), 2011, Jan, p. 238-241
Deng, Dongmei; Chiu, Chinghsueh; Kuo, Haochung; Chen, Peng; Lau, Kei May Article
Metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD
Science China: Physics, Mechanics and Astronomy, v. 54, (10), 2011, p. 1815-1818
Li, Haiou; Huang, Wei; Li, Simin; Tang, Chak Wah; Lau, Kei May Article
Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate
IEEE journal of quantum electronics, v. 47, (7), July 2011, p. 899-906
Chiu, Chinghsueh; Lin, Chienchung; Deng, DongMei; Lin, Dawei; Li, Jinchai; Li, Zhenyu; Shu, Giawei; Lu, Tien-Chang; Shen, Jilin; Kuo, Haochung; Lau, Kei May Article
Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper
Optics express, v. 19, (14), July 2011, p. A956-A961
Lau, Kei May; Wong, Ka Ming; Zou, Xinbo; Chen, Peng Article
Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
AIP Advances, v. 1, (3), 2011, article number 032132
Lu, Junyong; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi Article
Active matrix programmable monolithic light emitting diodes on silicon (LEDoS) displays
49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011, v. 3, 2011, p. 1215-1218
Liu, Zhaojun; Wong, Ka Ming; Chong, Wing Cheung; Lau, Kei May Conference paper
InAlAs/InGaAs Metamorphic HEMT and MOS-HEMT with Regrown Source/drain by MOCVD
69th Annual Device Research Conference, Santa Barbara, USA, 2011, Article number 5994437, p. 107-108
Zhou, Xiuju; Li, Qiang; Tang, Chak Wah; Lau, Kei May Conference paper
InGaAs MOS-HEMTs on Si Substrates Grown by MOCVD
The 23rd International Conference on Indium Phosphide and Related Materials, Berlin, Germany, 2011, article number 5978338
Zhou, Xiuju; Tang, Chak Wah; Li, Qiang; Lau, Kei May Conference paper
InP Lattice-Matched HEMT with Regrown Source/Drain by MOCVD
International Conference on Indium Phosphide and Related Materials, Berlin, Germany, 2011, article number 5978339
Li, Qiang; Li, Ming; Tang, Chak Wah; Lau, Kei May Conference paper
Metamorphic p-i-n InGaAs photodetectors grown by MOCVD
2011 Electronic Materials Conference, Santa Barbara, USA, 22 - 24 June 2011
Gao, Yan; Zhong, Zhenyu; Liang, Hu; Geng, Yu; Feng, Shaoqi; Lau, Kei May; Poon, Andrew Wing On Conference paper
Optical and electrical properties of GaN-based light emitting diodes grown on micro and nano-scale patterned Si substrate
Proceedings of SPIE--the international society for optical engineering, v. 8123, 2011
Chiu, Chinghsueh; Lin, Chienchung; Deng, DongMei; Kuo, Haochung; Lau, Kei May Conference paper

2010 24

Determining phonon deformation potentials of hexagonal GaN with stress modulation
Journal of Applied Physics, v. 108, (12), 2010, article number 123520
Lu, Junyong; Wang, ZhiJia; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi Article
Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)
Chinese Physics Letters, v. 27, (3), 2010, MAR
Wang, Hui; Liang, Hu; Wang, Yong; Ng, Karwei; Deng, Dongmei; Lau, Kei May Article
Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD
Science china-physics MECHANICS & ASTRONOMY, v. 53, (9), 2010, SEP, p. 1578-1581
Wang, Yong; Yu, NaiSen; Deng, DongMei; Li, Ming; Sun, Fei; Lau, Kei May Article
InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
Applied physics letters, v. 96, (20), 2010, MAY 17, article number 201106
Deng, Dongmei; Yu, Naisen; Wang, Yong; Zou, Xinbo; Kuo, Haochung; Chen, Peng; Lau, Kei May Article
Transfer of GaN-Based Light-Emitting Diodes From Silicon Growth Substrate to Copper
IEEE electron device letters, v. 31, (2), 2010, FEB, p. 132-134
Wong, Ka Ming; Zou, Xinbo; Chen, Peng; Lau, Kei May Article
0.3-μm gate-length metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2010, p. 1374-1376
Li, Haiou; Li, Ming; Tang, Chak Wah; Zhong, Zhenyu; Lau, Kei May Conference paper
Epitaxial growth of III-nitride LEDs on porous Si substrates
The 11th National MOCVD Conference, Suzhou, China, Jan 13-14, 2010
Deng, Dongmei; Yu, Naisen; Wang, Yong; Zou, Xinbo; Chen, Peng; Lau, Kei May Conference paper
GaN-based Blue LEDs Grown on Si and Transferred to Copper Substrates with Enhanced Output Power
37th International Symposium on Compound Semiconductors ISCS, Kagawa, Japan, May 30- June 4, 2010
Wong, Ka Ming; Zou, Xinbo; Chen, Peng; Lau, Kei May Conference paper
GaN-based Lamb-wave Mass-sensors on Silicon Substrates
Proceedings of IEEE Sensors, 2010, p. 2008-2011
Lee, Chi Ming; Wong, Ka Ming; Chen, Peng; Lau, Kei May Conference paper
Hetero-epitaxy of III-V compounds by MOCVD on silicon substrates
ECS Transactions, v. 28, (5), 2010, p. 227-231
Tang, Chak Wah; Zhong, Zhenyu; Lau, Kei May Conference paper
High-performance implant-free InGaAs MOSFETs on GaAs substrate grown by MOCVD
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2010, p. 1377-1379
Zhou, Xiuju; Tang, Chak Wah; Li, Haiou; Chen, Peng; Lau, Kei May Conference paper
High-resolution Light Emitting Diode on Silicon (LEDoS) Micro-display
International Workshop on Nitride Semiconductors 2010, Tampa, Florida, USA, September 20-24, 2010
Liu, Zhaojun; Liang, Hu; Chen, Peng; Lau, Kei May Conference paper
III-Nitride Devices on Silicon Substrates by MOCVD
IEEE 2010 Lester Eastman Conference on High Performance Devices (LEC), RPI, Troy, NY, USA, August 3-5, 2010
Lau, Kei May Conference paper
III-Nitride LEDs Grown on Porous Si Substrtes
15th International Conference on Metal Organic Vapor Phase Epitaxy, Lake Tahoe, USA, May 23-28, 2010
Deng, Dongmei; Yu, Naisen; Wang, Yong; Zou, Xinbo; Chen, Peng; Lau, Kei May Conference paper
III-nitride LEDs on Si Substrates
SPIE Photonics West, San Francisco, CA, USA, 23 - 28 January 2010
Lau, Kei May Conference paper
Improved AlGaN/GaN HEMTs grown on Si substrates by MOCVD
2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010, 2010, p. 68-71
Wang, Yong; Yu, Naisen; Deng, DongMei; Li, Ming; Sun, Fei; Lau, Kei May Conference paper
In situ monitoring of GaAs grown on Si(100) by Metal Organic Chemical Vapor Deposition
15th International Conference on MOVPE, Lake Tahoe, Navada, USA, May 23-28, 2010
Zhong, Zhenyu; Lau, Kei May Conference paper
In0.53Ga0.47As MOS-HEMTs on Si Substrates Grown by MOCVD
InP and Related Materials, Berlin, Germany, 23-27 May 2011
Zhou, Xiuju; Tang, Chak Wah; Li, Qiang; Lau, Kei May Conference paper
Lamb-wave UV-sensors Fabricated with GaN-based Thin Films on Silicon Substrates
International Workshop on Nitride Semiconductors, Tampa, Florida, USA, September 19-24, 2010
Lee, Chi Ming; Wong, Ka Ming; Chen, Peng; Lau, Kei-May Conference paper
Light Extraction Enhancement from GaN-based Thin-Film LEDs Grown on Silicon after Substrate Removal Using HNA Solution
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 7, (7-8), 2010, p. 2171-2173
Zou, Xinbo; Liang, Hu; Lau, Kei May Conference paper
MOCVD of Device Structures
11th National Conference on MOCVD, Suzhou, China, January 13-16, 2010
Lau, Kei May Conference paper
Optimization of GaAs buffer layer for high quality InP epitaxial layer grown on Si substrate for electronic devices applications by MOCVD
11th National MOCVD Conference, China, Suzhou, China, January 12-15, 2010
Zhong, Zhenyu; Tang, Chak Wah; Lau, Kei May Conference paper
Will LED on Si become Mainstream Technology
International Electron Devices and Materials Symposium, Chungli, Taiwan, Nov 18-19, 2010
Lau, Kei May Conference paper
Will LED on Si Become Mainstream Technology?
China International Optoelectronics Expo, Shenzhen, China, Septeember 6-9, 2010
Lau, Kei May Conference paper

2009 12

Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon
Applied physics letters, v. 94, (1), 2009, JAN 5, article number 012101
Chen, Peng; Chen, Winnie V.; Yu, Paul K.L.; Tang, Chak Wah; Lau, Kei May; Mawst, Luke James; Paulson, Charles A.; Kuech, Thomas F.; Lau, S.S. Article
HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice
Journal of Crystal Growth, v. 311, (10), 2009, MAY 1, p. 3089-3092
Li, Zhenyu; Lu, Tien-Chang; Kuo, Haochung; Wang, Shingchung; Lo, Minghua; Lau, Kei May Article
Improved GaN Grown on Si(111) Substrate Using Ammonia Flow Modulation on SiN (x) Mask Layer by MOCVD
Science in China Series e-technological sciences, v. 52, (9, Sp. Iss. SI), 2009, Sep, p. 2758-2761
Yu, NaiSen; Wang, Yong; Wang, Hui; Ng, KaiWei; Lau, Kei May Article
InP Layer Transfer with Masked Implantation
Electrochemical and SOLID STATE Letters, v. 12, (4), 2009, p. H149-H150
Chen, Wayne; Bandaru, Prabhakar R.; Tang, Chak Wah; Lau, Kei May; Kuech, Thomas F.; Lau, S.S. Article
Microbridge tests on gallium nitride thin films
Journal of micromechanics and microengineering, v. 19, (9), September 2009, article number 095019
Huang, Haiyou; Li, ZhiYing; Lu, Junyong; Wang, Zhi-Jia; Wang, Chong-Shun; Lau, Kei May; Chen, Kevin Jing; Zhang, Tongyi Article
Monolithic LED Microdisplay on Active Matrix Substrate Using Flip-Chip Technology
IEEE journal of selected topics in quantum electronics, v. 15, (4), 2009, JUL-AUG, p. 1298-1302
Liu, Zhao Jun; Wong, Ka Ming; Keung, Chi Wing; Tang, Chak Wah; Lau, Kei May Article
GaN Based Active Matrix Light Emitting Diode Array by Flip-Chip Technology
AOE 2008: ASIA OPTICAL FIBER COMMUNICATION AND OPTOELECTRONIC EXPOSITION AND CONFERENCE, 2009
Liu, Zhao Jun; Keung, Chi Wing; Lau, Kei May Conference paper
GaN-based Blue LEDs Grown on Si and Transferred to Copper Substrates with Enhanced Output Power
36th International Symposium on Compound Semiconductors, Santa Barbara, USA, Aug 30 - Sept 2, 2009
Wong, Ka Ming; Zou, Xinbo; Chen, Peng; Lau, Kei May Conference paper
GaN-based Monolithic LED Micro-arrays
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009), 2009, p. 730-731
Liu, Zhao Jun; Wong, Ka Ming; Tang, Chak Wah; Lau, Kei May Conference paper
Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2009, p. 136-139
Tang, Chak Wah; Li, Haiou; Zhong, Zhenyu; Ng, Kai Lun; Lau, Kei May Conference paper
III-nitride Based Ultraviolet LED Micro-array Module for Large-scale Display
37th International Symposium on Compound Semiconductors, Kagawa, Japan, May 31-June 4, 2010
Liu, Zhao Jun; Wong, Ka Ming; Keung, Chi Wing; Liang, Hu; Chen, Peng; Lau, Kei May Conference paper
Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009), 2009, p. 234-235
Chen, Peng; Wong, Ka Ming; Lau, Kei May; Lau, S.S. Conference paper

2008 15

Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrate
Journal of Crystal Growth, v. 310, (23), 2008, NOV 15, p. 5170-5174
Chiu, Chinhua; Li, Zhenyu; Chao, Chuli; Lo, Minghua; Kuo, Haochung; Yu, Peichen; Lu, Tien-Chang; Wang, Shingchung; Lau, Kei May; Cheng, S.J. Article
Growth and characterizations of GaN-based LEDs grown on wet-etched stripe-patterned sapphire substrates
Journal of Electronic Materials, v. 37, (10), 2008, OCT, p. 1560-1564
Ng, Kar Wei; Hwang, Jung Min; Lau, Kei May Article
Low-frequency noise properties of double channel AlGaN/GaN HEMTs
Solid-state electronics, v. 52, (5), 2008, MAY, p. 606-611
Jha, Shrawan Kumar; Surya, Charles C.; Chen, Kevin Jing; Lau, Kei May; Jelencovie, E. Article
Metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by MOCVD
IEEE electron device letters, v. 29, (6), 2008, JUN, p. 561-564
Li, Haiou; Tang, Chak Wah; Lau, Kei May Article
Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template
Applied physics letters, v. 93, (8), 2008, AUG 25, article number 081108
Chiu, Chinghua; Yen, Hishsuan; Chao, Chuli; Li, Zhenyu; Yu, Peichen; Kuo, Haochung; Lu, Tien-Chang; Wang, Shingchung; Lau, Kei May; Cheng, S.J. Article
Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces
Journal of lightwave technology, v. 26, (9-12), 2008, MAY-JUN, p. 1455-1463
Lee, Yaju; Kuo, Haochung; Lu, Tien-Chang; Wang, Shingchung; Ng, Kar Wai; Lau, Kei May; Yang, Zupo; Chang, Allan Shih-Ping; Lin, Shawnyu Article
AlInAs/GaInAs mHEMTs on Silicon Substrates Grown by MOCVD
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, p. 723-726
Lau, Kei May; Tang, Chak Wah; Li, Haiou; Zhong, Zhenyu Conference paper
Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 5, (6), 2008, p. 1892-1894
Li, Baikui; Chen, Jing; Lau, Kei May; Ge, Weikun; Wang, Jiannong Conference paper
Epitaxial lateral overgrowth of GaN-based light emitting diodes on SiO ₂ nanorod-array patterned sapphire substrates by MOCVD
Proceedings of SPIE - The International Society for Optical Engineering, v. 7135, 2008
Chiu, Chinhua; Chao, Chuli; Lo, Minghua; Cheng, Yuhjen; Kuo, Haochung; Yu, Peichen; Lu, Tien-Chang; Wang, Shingchung; Lau, Kei May Conference paper
Evidence of mobile holes on GaN HFET barrier layer surface - root cause of high power transistor amplifier current collapse
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, 2008, p. 1090-1093
Wen, Chengpaul; Wang, Jinyan; Hao, Yi Long; Zhang, Yaohui; Lau, Kei May Conference paper
High quality GaAs film on Si (100) with excellent surface morphology grown by MOCVD
2008 Electronic Material Conference (EMC2008), University California, Santa Barbara, CA
Zhong, Zhenyu; Lau, Kei May Conference paper
Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiN x mask layer by MOCVD
2008 Electronic Material Conference (EMC2008), CA, United States, 26 - 27 June 2008
Yu, Naisen; Wang, Yong; Wang, Hui; Ng, Kar Wai; Lau, Kei May Conference paper
Investigation of the natural degradation of green LEDs
2008 Electronic Material Conference (EMC2008), University California, Santa Barbara, CA
Deng, Dongmei; Ng, Kar Wai; Liang, Hu; Qi, Yundong; Lau, Kei May Conference paper
Metamorphic AlInAs/GaInAs HEMTs on Si Substrates by MOCVD
14th International Conference Metalorganic Vapor Phase Epitaxy IC MOVPE, Metz, France
Lau, Kei May; Tang, Chak Wah; Zhong, Zhenyu; Li, Haiou Conference paper
Transient leakage current technique for MIS HEMT (A12O3/AlGaN/GaN) dielectric semiconductor interface property characterization
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, 2008, p. 1440-1442
Wen, Chengpaul; Wang, Jinyan; Chen, Hongwei; Hao, Yi Long; Lau, Kei May; Tang, Chak Wah Conference paper

2007 24

1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTs
Microwave and optical technology letters, v. 49, (6), 2007, JUN, p. 1360-1362
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yu Gang; Lau, Kei May; Chen, Kevin Jing Article
A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel Al0.3_Ga0.7_N/Al0.05_Ga0.95_{N/GaN HEMTs}
红外与毫米波学报=Journal of Infrared and Millimeter Waves, v. 2007, (04), 2007, p. 241-245
程知群; 蔡勇; 劉杰; 周玉剛; 劉稚美; 陳敬 Article
Cathodoluminescence study of InGaN/GaN quantum-well LED structures grown on a Si substrate
Journal of Electronic Materials, v. 36, (9), 2007, SEP, p. 1144-1148
Xu, Jun; Chen, Li; Yu, Lisheng; Liang, Hu; Zhang, Baoshun; Lau, Kei May Article
DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
IEEE transactions on electron devices, v. 54, (1), January 2007
Liu, Jie; Zhou, Yugang; Zhu, Jia; Cai, Yong; Lau, Kei May; Chen, Kevin Jing Article
Device isolation by plasma treatment for planar integration of enhancement/depletion-mode AlGaN/GaN high electron mobility transistors
Japanese Journal of Applied Physics, v. 46, pt. 1, no. 4B, 24 Apr 2007, p. 2330-2333
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates
Journal of Crystal Growth, v. 298, (Sp. Iss. SI), 2007, JAN, p. 725-730
Zhang, Baoshun; Liang, Hu; Wang, Yong; Feng, Zhihong; Ng, Kar Wei; Lau, Kei May Article
High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits
IEEE electron device letters, v. 28, (5), 2007, MAY, p. 328-331
Cai, Yong; Cheng, Zhiqun; Yang, Zhenchuan; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Integration of enhancement and depletion-mode AlGaN/GaN MIS-HFETs by fluoride-based plasma treatment
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 204, (6), 2007, JUN, p. 2023-2027
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Metamorphic heterostructure InP/GaAsSb/InP HBTs on GaAs substrates by MOCVD
IEEE electron device letters, v. 28, (7), 2007, JUL, p. 539-542
Zhou, Wei; Tang, Chak Wah; Zhu, Jia; Lau, Kei May; Zeng, Yuping; Liu, Honggang; Tao, Nick G.M.; Bolognesi, Colombo R. Article
MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
Chinese Physics, v. 16, (11), 2007, NOV, p. 3494-3497
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yu Gang; Lau, Kei May; Chen, Kevin Jing Article
Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse
IEEE electron device letters, v. 28, (3), 2007, MAR, p. 189-191
Song, Di; Liu, Jie; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Surface acoustic wave device on AlGaN/GaN heterostructure using two-dimensional electron gas interdigital transducers
Applied physics letters, v. 90, (21), 2007, MAY 21, Article number 213506
Wong, King Yuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Temperature dependence of cathodoluminescence spectra and stress analysis of a GaN layer grown on a mesa structured Si substrate
Journal of applied physics, v. 102, (10), 2007, NOV 15, article number 104508
Xu, Jun; Chen, Li; Yu, Lisheng; Liang, Hu; Zhang, Baolong; Lau, Kei May Article
Comparison of Ni/Au, ITO, and ATO-based current spreading layers for near-ultraviolet light-emitting diodes
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 4, (7), 2007, p. 2646-2649
Chong, Wing Cheung; Lau, Kei May Conference paper
Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment
Proceedings of International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007, 2007, p. 313-315
Li, Haiou; Tang, Chak Wah; Chen, Kevin Jing; Lau, Kei May Conference paper
Fabrication of position-controllable GaN nanostructures
Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, 2007, p. 985-988
Yang, Zhen Chuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevinjing Conference paper
Fabrication of Vertical Position-controllable GaN Nanowires on (111) Si Substrate
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 813-816
Wang, Congshun; Yang, Zhenchuan; Zhang, Baoshun; Wang, Yong; Wang, Hui; Lau, Kei May; Chen, Kevin Jing Conference paper
Low noise distributed amplifier using composite-channel Al _0.3Ga0.7N/Al_0.05Ga_0.95N/GaN HEMTs
IET Conference Publications, (529 CP), 2007, p. 513-519
Cheng, Zhiqun; Wu, Yichao; Sun, Lingling; Lau, Kei May; Chen, Kevin Jing Conference paper
Microwave noise characterization of enhancement-mode AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
65th DRC Device Research Conference, 2007, p. 77-78
Liu, Jie; Song, Di; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevinjing Conference paper
Planar two-dimensional electron gas (2DEG) IDT SAW filter on AlGaN/GaN heterostructure
IEEE MTT-S International Microwave Symposium Digest, 2007, p. 2043-2046
Wong, Kingyuen; Tang, Wilson; Lau, Kei May; Chen, Kevin Jing Conference paper
Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment
Technical Digest - International Electron Devices Meeting, IEDM, 2007, p. 389-392
Yi, Congwen; Wang, Ruonan; Huang, Wei; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS)
ECS Transactions, v. 11, (5), 2007, p. 225-230
Lee, Yaju; Chiu, Chinhua; Kuo, Haochung; Lu, Tien-Chang; Wang, Shingchung; Ng, Kar Wai; Lau, Kei May; Yang, Zupo; Chang, Allan S.P.; Lin, Shawnyu Conference paper
SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabrication of suspended GaN microstructures
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p. 670-672
Yang, Zhen Chuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Conference paper
Two-dimensional Electron Gas (2DEG) IDT SAW Devices on AlGaN/GaN Heterostructure
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 1045-1048
Wong, Kingyuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper

2006 25

AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
IEEE electron device letters, v. 27, (1), 2006, JAN, p. 10-12
Liu, Jie; Zhou, Yu Gang; Zhang, Jizhi; Lau, Kei May; Chen, Kevin Jing Article
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
IEEE transactions on electron devices, v. 53, (9), 2006, SEP, p. 2207-2215
Cai, Yong; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing Article
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
IEEE transactions on electron devices, v. 53, (6), 2006, JUN, p. 1474-1477
Jia, Shuo; Cai, Yong; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Article
Enhancement-mode AlGaN/GaN HEMTs with low on-resistance and low knee-voltage
IEICE transactions on electronics, v. E89C, (7), 2006, JUL, p. 1025-1030
Cai, Yong; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing Article
Enhancement-mode Si3N4/AlGaN/GaN MISHFETs
IEEE electron device letters, v. 27, (10), 2006, OCT, p. 793-795
Wang, Ruonan; Cai, Yong; Tang, Chi-Wai; Lau, Kei May; Chen, Kevin Jing Article
Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 203, (7), 2006, MAY, p. 1712-1715
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Article
GaN-on-pattemed-silicon (GPS) technique for fabrication of GaN-based MEMS
Sensors and Actuators a-physical, v. 130, (Sp. Iss. SI), 2006, AUG 14, p. 371-378
Yang, Zhenchuan; Wang, Ruonan; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin J. Article
Influence of oxidation and annealing temperatures on quality of Ga2O3 film grown on GaN
Thin solid films, v. 515, (4), 2006, DEC 5, p. 2111-2115
Lin, Limin; Luo, Yi; Lai, Pui To; Lau, Kei May Article
Isoelectronic indium-surfactant-doped Al0.3Ga0.7N/GaN high electron mobility transistors
Applied physics letters, v. 88, (12), 2006, MAR 20
Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing; Lau, Kei May Article
Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique
Applied physics letters, v. 88, (4), 2006, JAN 23, article number 041913
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Article
Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment
IEEE transactions on electron devices, v. 53, (9), 2006, SEP, p. 2223-2230
Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE electron device letters, v. 27, (8), 2006, AUG, p. 633-635
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
A planar integration process for E/D-mode AlGaN/GaN HEMT DCFL integrated circuits
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, Article number 4110036, p. 261-264
Wang, Ruonan; Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch
Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2312-2316
Liu, Jie; Zhou, Yugang; Zhu, Jia; Lau, Kei May; Chen, Kevin Jing Conference paper
Comparison of Ni/Au, Ag/ITO, and Ag/ATO Curent-spreading Layers for Violet Light-Emitting Diodes
Int. Workshop on Nitride Semiconductors, Kyoto, Japan, Oct 22-27, 2006
Chong, Wing Cheung; Lau, Kei May Conference paper
Core Technologies for III-Nitride Integrated Microsensors
6th Emerging Information Technology Conference, Richardson, Texas, USA, Aug 10-13, 2006
Chen, Kevin Jing; Lau, Kei May Conference paper
Effects of NO annealing on the characteristics of GaN MIS capacitor
2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 2006, p. 561-564
Lin, Limin; Lai, Pui To; Lau, Kei May Conference paper
Effects of oxidation temperature on Ga₂O₃ film thermally grown on GaN
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, 2006, p. 605-608
Lin, Limin; Luo, Yi; Lai, Pui To; Lau, Kei May Conference paper
Enhancement-Mode A1GaN/GaN Metal Insulator Semiconductor HFETs Using Fluoride-Based Plasma Treatment Technique
Int. Workshop on Nitride Semiconductors, Kyoto, Japan, Oct 22-27, 2006
Wang, Ruonan; Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2368-2372
Jia, Shuo; Cai, Yong; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Conference paper
GaN MENS by MOCVD Growth of GaN on Patterned Si Substrates and Wet Etching
21th Meeting of the Electrochemical Society, Chicago, Illinois, May 6-10, 2007
Yang, Zhenchuan; Zhang, Baoshun; Chen, Kevin Jing; Lau, Kei May Conference paper
GaN-based Direct-Coupled FET Logic (DCFL) Digital Circuits Operating at 375 oC
2006 Int. Conf. on Solid State Devices and Materials, Yokahama, Japan, Sept 12-15, 2006
Cai, Y.; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor
Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC 2006), 2006, article number 4099867, p. 105-108
Jha, S.K.; Surya, C.; Chen. K.J.; Lau, K.M. Conference paper
Normally-off AlGaN/GaN low-density-drain HEMTs (LDD-HEMT) with enhanced breakdown voltage and suppressed current collapse
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, 2007, p. 257-260
Song, Di; Liu, Jie; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
Planar integration of SAW filter with HEMT on AlGaN/GaN heterostructure using fluoride-based plasma treatment
Proceedings - IEEE Ultrasonics Symposium, v. 1, 2006, p. 281-284
Wong, Kingyuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper

2005 28

AlGaN-GaN double-channel HEMTs
IEEE transactions on electron devices, v. 52, (4), 2005, APR, p. 438-446
Chu, Rongming; Zhou, Yu Gang; Liu, Jie; Wang, Deliang; Chen, Kevin Jing; Lau, Kei May Article
AlGaN-GaNHEMTs on patterned silicon (111) substrate
IEEE electron device letters, v. 26, (3), March 2005, p. 130-132
Jia, Shuo; Dikme, Yilmaz Lmaz; Wang, Deliang; Chen, Kevin Jing; Lau, Kei May; Heuken, Michael Article
Broadband microwave noise characteristics of high-linearity composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
IEEE electron device letters, v. 26, (8), 2005, AUG, p. 521-523
Cheng, Zhiqun; Liu, Jie; Zhou, Yu Gang; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Article
Comparison of blue and green InGaN/GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy
Applied physics letters, v. 86, (10), 2005, MAR 7, article number 101903
Qi, Yundong; Liang, Hu; Wang, Deliang; Lü, Zhendong; Tang, Chak Wah; Lau, Kei May Article
Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition
Journal of Electronic Materials, v. 34, (1), 2005, JAN, p. 112-118
Zhou, Yu Gang; Wang, Deliang; Chu, Rongming; Tang, Chak Wah; Qi, Yundong; Lü, Zhendong; Chen, Kevin Jing; Lau, Kei May Article
Doping concentration and structural dependences of the thermal stability of the 2DEG in GaN-based high-electron-mobility transistor structures
Japanese Journal of Applied Physics, v. 44, pt. 2 no. 1-7, 2005, p. L21-L23
Feng, Zhihong; Zhou, Yu Gang; Cai, Shujun; Lau, Kei May Article
Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy
Journal of Crystal Growth, 272, 1-4, December 2004
Qi, YuDong; Liang, Hu; Tang, Chak Wah; Lü, Zhendong; Lau, Kei May Article
Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates
IEEE photonics technology letters, v. 17, (9), 2005, SEP, p. 1812-1814
Feng, Zhihong; Lau, Kei May Article
Enhanced-performance of AlGaN-GaNHEMTs grown on grooved sapphire substrates
IEEE electron device letters, v. 26, (12), December 2005, p. 870-872
Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing; Lau, Kei May Article
Highly linear A1(0.3)Ga(0.7)N-A1(0.05)Ga(0.95)N-GaN composite-channel HEMTs
IEEE electron device letters, v. 26, (3), 2005, MAR, p. 145-147
Liu, Jie; Zhou, Yu Gang; Chu, Rongming; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Article
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE electron device letters, v. 26, (7), 2005, JUL, p. 435-437
Cai, Yong; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films
Applied physics letters, v. 86, (3), 2005, JAN 17
Cai, Yong; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition
Journal of applied physics, v. 97, (5), 2005, MAR 1
Wang, Deliang; Jia, Shuo; Chen, Kevin Jing; Lau, Kei May; Dikme, Yilmaz Lmaz; Van Gemmern, Philipp; Lin, YC; Kalisch, Holger; Jansen, Rolf H.; Heuken, Michael Article
Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor
IEEE electron device letters, v. 26, (7), 2005, JUL, p. 432-434
Chu, Chun San; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
Thermally activated carrier transfer processes in InGaN/GaN multi-quantum-well light-emitting devices
Journal of applied physics, v. 98, (2), 2005, p. 1-5
Yang, Chunlei; Ding, Lu; Wang, Jiannong; Fung, Kwok Kwong; Ge, Weikun; Liang, Hu; Yu, Lisheng; Qi, Yundong; Wang, Deliang; Lü, Zhendong; Lau, Kei May Article
低温近场光学显微术对InGaN／GaN多量子阱电致发光温度特性的研究
物理学报=Acta Physica Sinica, v. 2005, (11), 2005, p. 5344-5349
徐耿釗; 梁琥; 白永強; 劉紀美; 朱星 Article
A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure
Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, 2005, p. 385-388
Chu, Chun San; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May Conference paper
AlGaN/GaN HEMTs on Grooved Sapphire Substrate,'6th Int. Conf. on Nitride Semiconductors,(ICNS-6)
Bremen, Germany, Aug. 28-Sep. 2, 2005
Feng, ZhiHong; Cai, ShuJin; Chen, Kevin Jing; Lau, Kei May Conference paper
Fabrication of Suspended GaN Microstructures Using GaN on Patterned Silicon (GPS) Technique
6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Yang, Z.; Wang, Rong; Jia, Shuo; Wang, Deliang; Zhang, Bao Shun; Chen, Kevin Jing; Lau, Kei May Conference paper
GaN on Patterned Silicon (GPS) technique for fabrication of GaN-based MEMS
Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05, v. 1, 2005, p. 887-890
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Chen, Kevin Jing; Lau, Kei May Conference paper
GaN on Patterned Silicon (GPS) technique for GaN-based integrated microsensors
Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 298-301
Yang, Zhen Chuan; Wang, Ruonan; Wang, Deliang; Zhang, Baoshun; Chen, Kevinjing; Lau, Kei May Conference paper
Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth
Physica Status Solidi C: Conferences, v. 2, (7), 2005, p. 2663-2667
Zhou, Yugang; Chu, Rongming; Liu, Jie; Chen, Kevin Jing; Lau, Kei May Conference paper
High-Performance Metamorphic InP/GaAsSb/InP “Type-II” DHBTs Grown on GaAs Substrates
2006 International Conference on Compound Semiconductor Manufacturing Technology, Vancouver, BC, Canada, Digest, p.157, April 24-27, 2006
Zeng, Yuping; Liu, Honggang; Tao, Nick G.M.; Bolognesi, Colombo R.; Zhou, Wei; Tang, Chak Wah; Lau, Kei May Conference paper
MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates
2006 International Conference on Compound Semiconductor Manufacturing Technology, Vancouver, BC, Canada, Digest, p.243, April 24-27, 2006.
Tang, Chak Wah; Jiang, L.; Lau, Kei May; Chen, Kevin Jing Conference paper
Monolithic integrated c-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 1112-1115
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing Conference paper
Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits
Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 771-774
Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Chen, Kevinjing; Lau, Kei May Conference paper
Reduced Gate-bias dependence of 2DEG mobility in a Composite-Channel HEMT
6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Zhu, Jia; Liu, J.; Zhou, Yu Gang; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Conference paper
Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Device Research Conference - Conference Digest, DRC, v. 2005, 2005, p. 179-180
Cai, Yong; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May Conference paper

2004 15

Al0.10Ga0.90As-GaAs microcoolers
IEEE Electron Device Letters, v. 25, (6), 2004, June, p. 345-347
Zhang, Jizhi; Anderson, Neal G.; Lau, Kei May Article
Characterization of GaN grown on patterned Si(111) substrates
Journal of Crystal Growth, v. 272, (1-4), 2004, DEC 10, p. 489-495
Wang, Deliang; Dikme, Yilmaz Lmaz; Jia, Shuo; Chen, Kevin Jing; Lau, Kei May; Van Gemmern, Philipp; Lin, YC; Kalisch, Holger; Jansen, RoIf H.; Heuken, Michael Article
Efficient wet etching of GaN and p-GaN assisted with chopped UV source
Superlattices and microstructures, v. 35, (1-2), 2004, JAN-FEB, p. 45-57
Hwang, Jungmin; Ho, KY; Hwang, ZH; Hung, Weihsiu; Lau, Kei May; Hwang, Hueyliang Article
Enhanced thermal stability of the two-dimensional electron gas in GaN/AlGaN/GaN heterostructures by Si3N4 surface-passivation-induced strain solidification
Applied physics letters, v. 85, (22), 2004, NOV 29, p. 5248-5250
Feng, Zhihong; Zhou, Yu Gang; Cai, Shujun; Lau, Kei May Article
GaAs Esaki junctions with autocompensated impurities in the n side by metalorganic chemical vapor deposition
Applied physics letters, v. 85, (19), 2004, NOV 8, p. 4415-4417
Zhang, Jizhi; Lau, Kei May Article
GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy
Journal of Crystal Growth, v. 272, (1-4), 2004, DEC 10, p. 327-332
Feng, Zhihong; Qi, Yundong; Lü, Zhendong; Lau, Kei May Article
Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN
Applied physics letters, v. 84, (10), 2004, MAR 8, p. 1710-1712
Kim, Hanki; Seong, Taeyeon; Adesida, Ilesanmi A.; Tang, Chak Wah; Lau, Kei May Article
Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity
Technical Digest - International Electron Devices Meeting, IEDM, 2004, p. 811-814
Liu, Jie; Zhou, Yugang; Chu, Rongming; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Conference paper
Dual wavelength emission InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy
12th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 12), Hawaii, USA, 30 May - 4 June 2004
Qi, Yu Dong; Liang, Hu; Lau, Kei May Conference paper
Effect of different SiN x Passivation and Their Strain on the Reliability of GaN-Based HEMT Structures
2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25
Feng, Zhi Hong; Zhou, Yu Gang; Cai, Shu Jun; Lau, Kei May Conference paper
GaN-Based Blue-Light-Emitting Diodes Grown and Fabricated on Patterned Sapphire Substrates Using Metalorganic Vapor Phase Epitaxy
12th Int. Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XII), Maui, Hawaii, USA, May 30-June 4
Feng, Zhihong; Qi, Yundong; Lü, Zhendong; Zhou, Yugang; Lau, Kei May Conference paper
GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 3, 2004, p. 2257-2260
Chu, Chun San; Zhou, Yugang; Chu, Rongming; Chen, Kevin Jing; Lau, Kei May Conference paper
Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT
2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25 2004
Chu, Rongming; Zhou, Yugang; Liu, Jie; Chen, Kevin Jing; Lau, Kei May Conference paper
Thermal transfer of excess carriers from the GaN barrier to the InGaN quantum dots for efficient electroluminescence
AIP Conference Proceedings Volume 772, page 765 (2005), the 27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona, USA, 26-30 July 2004,
Yang, Chunlei; Liang, Hu; Yu, Lisheng; Qi, Yundong; Lau, Kei May; Wang, Jiannong; Fung, Kwok Kwong; Ge, Weikun Conference paper
Thermally activated carriers transfer process for the success of InGaN/GaN multi-quantum well light emitting devices
The 27th International Conference on the Physics of Semiconductors, Flagstaff, AZ, JUL 26-30, 2004, v. 772, 2005, p. 765-766
Yang, Chunlei; Liang, H.; Yu, L.S.; Qi, Yudong; Wang, Deliang; Lu, Z.D.; Lau, Kei May; Wang, Jiannong; Fung, Kwok Kwong; Ge, Weikun Conference paper

2003 5

Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures
Physica Status Solidi C, Vol. 0, (7), 2003, p. 2400-2403
Chu, Rongming; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
AlGaAs superlattice microcoolers
Applied physics letters, v. 83, (2), 2003, JUL 14, p. 374-376
Zhang, Jizhi; Anderson, Neal G.; Lau, Kei May Article
AlGaN/GaN/Graded-AlGaN double heterostructure HEMT
2003 Int. Conf. Solid-State Devices and Materials (SSDM2003), Tokyo, Japan, Sepetmber 16-18 2003, p. 918-919
Zhou, Y.G.; Chu, R.M.; Chen, K.J.; Lau, K.M. Conference paper
Comparison of temperature dependent electroluminescence of InGaN/GaN and AlGaInP based LEDs
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, 2003, p. 196-199
Liang, Hu; Yu, Lisheng; Qi, Yundong; Wang, Deliang; Lü, Zhendong; Tang, Wilson; Lau, Kei May; Yang, Chunlei; Wang, Jiannong; Ge, Weikun Conference paper
Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors
2003 Electronic Material Conference (EMC2003), Salt Lake City, Utah, USA, June 25-27 2003, p. 85
Chu, Rongming; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May Conference paper

2002 1

Charactersization of a novel GaAs-based microwave optical switch
Solid-State Electronics, v. 46, (10), October 2002, p. 1573-1577
Lau, Kei May; Wang, Hong; Zheng, H.Q.; Xiong, Y.Z.; Radhakrisnan, K. Article

2001 2

OMVPE growth of P-type GaN using solution Cp2Mg
Journal of Electronic Materials, v. 30, (11), 2001, NOV, p. 1382-1386
Qi, Yundong; Musante, Charles F.; Lau, Kei May; Smith, Lesley M.; Odedra, Rajesh; Kanjolia, Ravi K. Article
Study of Schottky barrier of Ni on p-GaN
Applied physics letters, v. 79, (27), 2001, DEC 31, p. 4536-4538
Yu, Lisheng; Qiao, Dongjiang; Jia, L.; Lau, SS; Qi, Yundong; Lau, Kei May Article

2000 3

Characteristic temperature study of GaAsP-AlGaAs tensile strained quantum well lasers
Journal of Applied Physics, v. 88, (9), 2000, p. 5400-5409
Tolliver, Todd R.; Anderson, Neal G.; Agahi, Farid; Lau, Kei May Article
Exciton dynamics and valence band mixing in tensile-strained semiconductor quantum wells
Semiconductor science and technology, v. 15, (2), 2000, p. 189-196
Pérez, Eduardo; Vi?a, Luis; Koteles, Emil S.; Lau, Kei May; Di Carlo, Aldo; Lugli, Paol Article
Intersubband absorption characteristics in OMVPE grown delta-doped GaAs/AlGAs multiple quantum well structures
Journal of Electronic Materials, v. 29, (2), 2000, p. 225-230
Lutz, Charles R.; Kanaley, Jason; Lau, Kei May Article

1997 2

Dependence of polarization mode and threshold current on tensile strain in AIGaAs/GaAsP quantum well lasers
Solid-state electronics, v. 41, (4), 1997, p. 647-649
Agahi, Farid; Baliga, Arvind; Lau, Kei May; Anderson, Neal G. Article
Monolithic integration of a 94 GHz AlGaAs/GaAs 2-DEG mixer on quartz substrate by epitaxial lift-off
IEEE Transactions on Electron Devices, v. 44, (1), January 1997, p. 11-16
Basco, Ricardo; Prabhu, Ajay; Sigfrid Yngvesson, K.; Lau, Kei May Article

1996 6

Exciton dynamics and spin relaxation in unstrained and tensile-strained quantum wells
Journal of the Optical Society of America. B, Optical physics, v. 13, (5), 1996, p. 994-999
Mu?oz, Leonardo G.; Pérez, Eduardo; Bellani, Vittorio; Zimmermann, Sven; Vi?a, Luis; Ploog, Klaus H.; Koteles, Emil S.; Lau, Kei May Article
Exciton dynamics and spin-flip in tensile strained quantum wells
Solid-state electronics, v. 40, (1-8), 1996, p. 737-740
Pérez, Eduardo; Bellani, Vittorio; Zimmermann, Sven; Mu?oz, Leonardo G.; Vi?a, Luis; Koteles, Emil S.; Lau, Kei May Article
Tensile strain and threshold currents in GaAsP-AlGaAs single-quantum-well lasers
IEEE journal of quantum electronics, v. 32, (1), 1996, p. 29-36
Baliga, Arvind; Agahi, Farid; Anderson, Neal G.; Lau, Kei May; Cadambi, Srihari Article
Tensile-strained barrier GaAsP/GaAs single quantum-well lasers
Applied physics letters, v. 68, (26), 1996, p. 3778-3780
Agahi, Farid; Baliga, Arvind; Lau, Kei May; Anderson, Neal G. Article
BALANCE - A flexible parallel load balancing system for heterogeneous computing systems and networks
IEEE INFOCOM '96 - FIFTEENTH ANNUAL JOINT CONFERENCE OF THE IEEE COMPUTER AND COMMUNICATIONS SOCIETIES: NETWORKING THE NEXT GENERATION, PROCEEDINGS VOLS 1-3, 1996, p. 896-903
Hui, Chi-Chung; Chanson, Samuel T.; Chui, Pui-Man; Lau, Kei May Conference paper
Temperature characteristics of GaAsP/AlGaAs tensile strained quantum well lasers
IEEE Lasers & Electro-Optics Society Annual Meeting (LEOS), v. 1, 1996, p. 312-313
Tolliver, Todd R.; Anderson, Neal G.; Agahi, Farid; Lau, Kei May Conference paper

1995 4

High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser diodes
IEEE photonics technology letters, v. 7, (2), 1995, p. 140-143
Agahi, Farid; Lau, Kei May; Choi, Hongkyun; Baliga, Arvind; Anderson, Neal G. Article
Resonant tunneling injection quantum-well lasers
IEEE photonics technology letters, v. 7, (6), 1995, p. 596-598
Lutz, Charles R.; Agahi, Farid; Lau, Kei May Article
Valence band offsets in strained GaAs1-xPx/GaAs heterojunctions
Journal of Electronic Materials, v. 24, (6), 1995, p. 713-717
Anderson, Neal G.; Agahi, Farid; Baliga, Arvind; Lau, Kei May Article
Monolithic integration of a 94GHz AlGaAs/GaAs 2DEG mixer on quartz substrate by epitaxial lift-off
Annual Device Research Conference Digest, 1995, p. 38-39
Basco, Ricardo; Prabhu, Ajay; Yngvesson, Sigfrid; Lau, Kei May Conference paper

1994 6

Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures
Journal of Electronic Materials, v. 23, (7), 1994, p. 649-652
Hanson, Cynthia M.; Basco, Ricardo; Agahi, Farid; Lau, Kei May; Lareau, Richard T.; Monahan, Timothy P. Article
GaAs1-xPx/GaAs quantum-well structures with tensile-strained barriers
IEEE journal of quantum electronics, v. 30, (2), 1994, p. 459-465
Agahi, Farid; Lau, Kei May; Baliga, Arvind; Anderson, Neal G. Article
Improvement of gas-switching abruptness for atmospheric pressure organometallic vapor phase epitaxy
Journal of Crystal Growth, v. 139, (3-4), 1994, p. 344-350
Agahi, Farid; Lutz, Charles R.; Lau, Kei May Article
Magneto-optical Properties of biaxially Strained Quanmm Wells
Philosophical Magazine B, v. 70, (3), 1994, p. 397-408
Vi?a, Luis; Mu?oz, Leonardo G.; Mestres, N.; Koteles, Emil S.; Bertolet, Daniel C.; Lau, Kei May Article
Enhanced stimulated emission of excited states in quantum wells by resonant tunneling
IEEE LEOS Annual Meeting - Proceedings, v. 2, 1994, p. 387-388
Lutz Jr, Charles R.; Agahi, Farid; Lau, Kei May Conference paper
Tensile-strained AlGaAs/GaAsP single quantum-well lasers
IEEE LEOS Annual Meeting - Proceedings, v. 1, 1994, p. 109-110
Agahi, Farid; Baliga, Arvind; Lau, Kei May; Choi, Hong K.; Anderson, Neal Conference paper

1993 8

Analysis of slow-wave transmission lines on multi-layered semiconductor structures including conductor loss
IEEE transactions on microwave theory and techniques, v. 41, (5), 1993, p. 824-829
Liou, Jenn-Chorng; Lau, Kei May Article
Comparison of electroabsorption in tensile-strained and lattice-matched GaAs(P)/AlGaAs quantum wells
Applied physics letters, v. 63, (26), 1993, p. 3616-3618
Gomatam, Badri N.; Anderson, Neal G.; Agahi, Farid; Musante, Charles F.; Lau, Kei May Article
Field-induced absorption edge merging in tensile strained GaAsP quantum wells
Applied physics letters, v. 62, (26), 1993, p. 3473-3475
Gomatam, Badri N.; Anderson, Neal G.; Agahi, Farid; Musante, Charles F.; Lau, Kei May Article
Focal Plane Arrays for Submillimeter Waves Using Two-Dimensional Electron Gas Elements
Remote Sensing Reviews, v. 8, 1993, p. 29
Yang, Jian-Xung; Lau, Kei May; Yngvesson, Sigfrid K. Article
High-quality two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures by LP-OMVPE
IEEE Transactions on Electron Devices, v. 40, (3), March 1993, p. 502-506
Agahi, Farid; Yang, Jian-Xun; Lau, Kei May; Yngvesson, Karl Sigfrid Article
Ultrahigh mobility two-dimensional electron gas in AlxGa 1-xAs/GaAs heterostructures by organometallic vapor phase epitaxy
Applied physics letters, v. 63, (14), 1993, p. 1960-1962
Basco, Ricardo; Agahi, Farid; Lau, Kei May Article
Valence-band-shape modification due to band coupling in strained quantum wells
Physical Review B, v. 47, (20), May 1993, p. 13926-13929
Vi?a, Luis; Mu?oz, Leonardo G.; Mestres, N.; Koteles, Emil S.; Ghiti, Ali; O'Reilly, Eoin P.O.; Bertolet, Daniel C.; Lau, Kei May Article
Wide-bandwidth electron bolometric mixers: a 2DEG prototype and potential for low-noise THz receivers
IEEE transactions on microwave theory and techniques, v. 41, (4), April 1993, p. 581-589
Yang, Jian-Xung; Agahi, Farid; Dai, Dong; Musante, Charles F.; Grammer, Wes; Lau, Kei May; Yngvesson, K. Sigfrid Article

1992 5

Exciton Trapping in Strained GaAsP Quantum Wells
Semiconductor Science and Technology, v. 7, 1992, p. 170-172
Takiguchi, Yoshihiro; Shum, Kai; Alfano, Robert R.; Koteles, Emil S.; Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May Article
Magneto-optical properties of quantum wells under biaxial tensile strain
Surface science, v. 267, (1-3), 1992, p. 533-536
Vi?a, Luis; Mu?oz, Leonardo G.; Mestres, N.; Koteles, Emil S.; Bertolet, Daniel C.; Lau, Kei May Article
Optically pumped submillimeter wave semiconductor lasers
IEEE journal of quantum electronics, v. 28, (8), 1992, p. 1773-1777
Lau, Kei May; Xu, Wei Article
Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium
Journal of Electronic Materials, v. 21, (10), 1992, p. 947-953
Landini, Barabara E.; Agahi, Farid; Lau, Kei May Article
2DEG electron bolometric mixers: new results and potential for low-noise THz receivers
Proceedings of SPIE--the international society for optical engineering, v. 1929, 1992, p. 208-209
Yang, J.X.; Agahi, F.; Dai, D.; Musante, C.; Grammer, W.; Lau, K.M.; Yngvesson, K.S. Conference paper

1991 2

Effects of growth interruption on the optical properties of AIGaAs/GaAs and GaAs/InGaAs quantum wells grown by atmospheric pressure organometallic chemical vapor deposition
Journal of Electronic Materials, v. 20, (2), 1991, p. 197-201
Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May; Koteles, Emil S. Article
Patterned substrate epitaxy surface shapes
Journal of Crystal Growth, v. 108, (1-2), 1991, p. 73-88
Jones, Stephen H.; Seidel, Lisa K.; Lau, Kei May; Harold, Michael P. Article

1990 3

Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition
Journal of Electronic Materials, v. 19, (9), 1990, p. 967-974
Bertolet, Daniel C.; Hsu, JungKuei; Agahi, Farid; Lau, Kei May Article
Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells
Surface science, v. 228, (1-3), 1990, p. 314-317
Koteles, Emil S.; Owens, Douglas A.; Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May Article
Solution to characteristics of planar transmission lines made of finite-thickness metal on multi-layer media
IEEE MTT-S International Microwave Symposium digest, v. 1, 1990, p. 179-182
Liou, Jennchorng; Lau, Kei May Article

1989 1

Insitu Surface Cleaning and Selective Oxidation in OMCVD Systems
15th International Symp on Gallium Arsenide And Related Compounds, Atlanta, US, 11-14 Sep 1988
Jones, Stephen H.; Lau, Kei May; Pouch, John J. Conference paper

1988 9

Effects of polyimide passivation on the photoluminescence of high-purity epitaxial GaAs
Journal of applied physics, v. 63, (3), 1988, p. 962-964
Hsu, JungKuei; Lau, Kei May Article
Exciton photoluminescence linewidths in very narrow AlGaAs/GaAs and GaAs/InGaAs quantum wells
Journal of applied physics, v. 64, (11), 1988, p. 6562-6564
Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May; Koteles, Emil S.; Owens, Douglas A. Article
In situ thermal oxidation for surface cleaning and mask generation prior to selective area epitaxy
Applied physics letters, v. 53, (21), 1988, p. 2068-2070
Jones, Stephen H.; Lau, Kei May Article
Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor deposition
Applied physics letters, v. 52, (4), 1988, p. 293-295
Bertolet, Daniel C.; Hsu, JungKuei; Jones, Stephen H.; Lau, Kei May Article
Saturation of light- and heavy-hole exciton energies in very narrow quantum wells
Physical Review B, v. 38, (14), November 1988
Koteles, Emil S.; Owens, Douglas A.; Bertolet, Daniel C.; Lau, Kei May Article
Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition
Applied physics letters, v. 53, (25), 1988, p. 2501-2503
Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May Article
Temperature Dependence and Persistent Conductivity of GaAs MESFET's with Superlattice Buffers
IEEE Transactions on Electron Devices, v. 35, (1), January 1988, p. 14-17
Liou, Jenn-Chorng; Lau, Kei May Article
Temperature stability of AlxGa1-xAs (0≤x≤1) thermal oxide masks for selective-area epitaxy
Journal of applied physics, v. 64, (2), 1988, p. 922-925
Jones, Stephen H.; Lau, Kei May; Pouch, John J. Article
Nondestructive Characterization Of MOCVD-Grown GaInAs/GaAs Using Rocking Curve And Topography
Proceedings of SPIE - The International Society for Optical Engineering, v. 877, May 1988, p. 41-51
Wie, Chu R.; Kim, H.M.; Lau, Kei May Conference paper

1987 5

AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor deposition
Journal of applied physics, v. 62, (1), 1987, p. 120-125
Bertolet, Daniel C.; Hsu, JungKuei; Lau, Kei May Article
Mobility Profiling of GaAs Power FET's by Magnetotransconjuctance Measurements
IEEE Transactions on Electron Devices, v. 34, (4), April 1987, p. 920-925
Lau, Kei May; Liou, Jenn-Chorng Article
Photoluminescence characteristics of selectively grown GaAs and AlGaAs/GaAs quantum wells
Journal of applied physics, v. 62, (6), 1987, p. 2466-2469
Lau, Kei May; Jones, Stephen H.; Hsu, JungKuei; Bertolet, Daniel C. Article
SELECTIVE AREA GROWTH OF HIGH QUALITY GaAs BY OMCVD USING NATIVE OXIDE MASKS.
Journal of the Electrochemical Society, v. 134, (12), 1987, p. 3149-3155
Jones, Stephen H.; Lau, Kei May Article
Slow relaxation and electric field quenching of persistent conductivity in GaAs metal-semiconductor field-effect transistors with different buffer layer structures
Applied physics letters, v. 51, (24), 1987, p. 2010-2012
Liou, Jennchorng; Lau, Kei May Article

1986 3

A new analytical technique of photoluminescence for optimization of organometallic chemical vapor deposition
Journal of applied physics, v. 60, (10), 1986, p. 3781-3784
Hsu, JungKuei; Jones, Stephen H.; Lau, Kei May Article
IVA-3 Parasitic Corrections for Mobility Profiling of Large-Periphery GaAs Power FET's
IEEE Transactions on Electron Devices, v. 33, (11), November 1986, p. 1850-1851
Lau, Kei May; Liou, Jennchorng Article
ROOM LIGHT: THE GREMLIN CLOUDING AMPLIFIER TESTS.
Microwaves & RF, v. 25, (10), 1986, p. 75-77
Liou, Jenn-Chorng; Lau, Kei May Article

1985 1

RELATIONSHIP OF MAGNETOTRANSCONDUCTANCE MOBILITY PROFILES AND RF PERFORMANCE OF GAAS FETS.
IEEE MTT-S International Microwave Symposium digest, 1985, p. 204-206
Chan, S.K.; Lau, Kei May; White, Paul M. Conference paper

1984 1

Uniform Deposition of GaAs in a Multiwafer Vapor-Phase Epitaxial System
IEEE Transactions on Electron Devices, v. 31, (8), August 1984, p. 1086-1089
Lau, Kei May; Dat, Rovindra Article

1983 1

FIR Photoconductivity in Epitaxial InP
Infrared Physics, v. 23, 1983, p. 311
Lau, Kei May; Wilson, William L. Article

1979 1

Screw-fastened Joints for Thermal Contact at Low Temperatures
Rev. Sci. Instrum., v. 50, 1979, p. 254
Lau, Kei May; Zimmermann, William Jr Article


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Teaching Assignment

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2021-22 Winter 0 2021-22 Fall 1 2020-21 Summer 0 2020-21 Spring 3 2020-21 Winter 0 2020-21 Fall 3

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ELEC5190 Solid State and Semiconductor Electronics


ELEC2910 Academic and Professional Development I
ELEC3910 Academic and Professional Development II
ELEC5190 Solid State and Semiconductor Electronics


ELEC1010 Electronic and Information Technology
ELEC2910 Academic and Professional Development I
ELEC3910 Academic and Professional Development II


No Teaching Assignments


No Teaching Assignments


No Teaching Assignments






Research Postgraduate (RPG) Supervision From January 2019 to December 2022 (As of 30 January 2022)

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All Supervisions Current RPGs Graduated RPGs

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Current RPGs

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Doctor of Philosophy GU, Wen
Electronic and Computer Engineering( 2021 - )

LI, Jialun
Electronic and Computer Engineering( 2021 - )

XU, Ke
Electronic and Computer Engineering( 2021 - )

HUANG, Jie
Electronic and Computer Engineering( 2019 - )

LI, Jie
Electronic and Computer Engineering( 2019 - )

LIN, Qi
Electronic and Computer Engineering( 2019 - )

LIN, Liying
Electronic and Computer Engineering( 2018 - )

LIU, Yaying
Electronic and Computer Engineering( 2018 - )

QI, Longheng
Electronic and Computer Engineering( 2018 - )

LI, Peian
Electronic and Computer Engineering( 2017 - )

LUO, Wei
Electronic and Computer Engineering( 2017 - )

XUE, Ying
Electronic and Computer Engineering( 2017 - )

ZHU, Renqiang
Electronic and Computer Engineering( 2017 - )

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Graduated RPGs

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Doctor of Philosophy LYU, Qifeng
Electronic and Computer Engineering( Completed in 2021 )

YAN, Zhao
Electronic and Computer Engineering( Completed in 2021 )

ZHAO, Chunyu
Nano Science and Technology( Completed in 2020 )

ZHU, Si
Electronic and Computer Engineering( Completed in 2020 )

ZHANG, Xu
Electronic and Computer Engineering( Completed in 2019 )









ProjectsFrom January 2020 to December 2022

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All Projects 14 Leading Projects 5 Participating Projects 9

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The study of monolithic integration of indium phosphide lasers on silicon based on one dimensional photonic crystal microcavity


基于一維光子晶體微腔的磷化銦激光器硅光單片集成研究 Participating


National Natural Science Foundation of China


Project Team (HKUST)
LAU Kei May


2022 -




A High-accuracy Wafer Polisher and Bonders for Heterogeneous Integration


用於異質性整合的高精度磨片機和鍵合機 Participating


RGC - Collaborative Research Fund


Project Team (HKUST)
POON Andrew Wing On (Lead)
CHAN Man Sun
CHEN Kevin Jing
FAN Zhiyong
LAU Kei May
LEE Ricky Shi-wei
LEE Yi-Kuen
LI Zhigang
QIU Huihe
SRIVASTAVA Abhishek Kumar
WONG Man
YE Wenjing
YOBAS Levent
YU Hongyu


2021 -




GaN Trench-MOSFETs on SiC Substrate for High Power Applications


用於大功率應用的碳化矽襯底上氮化鎵溝槽型MOSFET Leading


Innovation and Technology Fund


Project Team (HKUST)
LAU Kei May (Lead)


2021 -




Full-color Micro-displays by Hybrid Integration of Blue/Green Dual-wavelength and Red LEDs


藍/綠光雙波長和紅光發光二極管混合集成製作的全彩微型顯示器 Leading


Innovation and Technology Fund


Project Team (HKUST)
LAU Kei May (Lead)


2021 -




Lateral Integration of III-V Lasers on SOI


III-V激光器在SOI上的橫向集成 Participating


RGC - General Research Fund


Project Team (HKUST)
WANG Yiwen (Lead)
LAU Kei May


2020 -




Semiconductor Quantum Dot Lasers Emitting in the Red


半導體量子點激光器發射紅色光 Leading


APT Electronics Co., Ltd., Innovation and Technology Fund


Project Team (HKUST)
LAU Kei May (Lead)


2020 -




Center for Wide-bandgap Semiconductor Power Electronics Research


寬禁帶半導體功率電子研究中心 Participating


Research Impact Fund


Project Team (HKUST)
CHEN Kevin Jing (Lead)
LAU Kei May
SIN Johnny Kin On


2019 -




Vertical GaN-based Trench MOSFETs on Silicon


矽上GaN基垂直溝槽MOSFET Participating


RGC - General Research Fund


Project Team (HKUST)
WANG Yiwen (Lead)
LAU Kei May


2019 -




InGaN/GaN Quantum Dot lasers directly grown on Silicon


直接在矽上生長InGaN/GaN量子點激光器 Participating


RGC - General Research Fund


Project Team (HKUST)
WANG Yiwen (Lead)
LAU Kei May


2018 - 2021




Development of novel high quality monolithic micro-LED modules


新型高品質集成化Micro LED模組研發 Participating


APT Electronics Co., Ltd., Guangzhou Municipal Science and Technology Bureau


Project Team (HKUST)
LAU Kei May


2018 - 2020




III-V Compound Tunnel Devices on Silicon


矽上的III-V化合物隧道器件 Leading


RGC - General Research Fund


Project Team (HKUST)
LAU Kei May (Lead)


2017 - 2020




A Deep Reactive Ion Etching System for Nanosystem Fabrication


用於納米系統製造的反應離子深硅刻蝕設備 Participating


RGC - Collaborative Research Fund


Project Team (HKUST)
POON Andrew Wing On (Lead)
CHAN Ho Bun
CHAN Man Sun
FAN Zhiyong
LAU Kei May
LEE Ricky Shi-wei
LEE Yi-Kuen
LI Zhigang
SIN Johnny Kin On
WEN Weijia
WONG Man
YE Wenjing
YOBAS Levent


2017 - 2020




Research in compound semiconductor technologies Leading


SEMATECH Inc.


Project Team (HKUST)
LAU Kei May (Lead)


2013 - 2020




State Key Laboratory of Advanced Displays and Optoelectronics Technologies (The Hong Kong University of Science and Technology)


先進顯示與光電子技術國家重點實驗室（香港科技大學） Participating


Innovation and Technology Fund


Project Team (HKUST)
WONG Man (Lead)
CHAN Che Ting
CHAN Man Sun
CHEN Kevin Jing
FAN Zhiyong
KWOK Hoi Sing
LAU Kei May
LEE Ricky Shi-wei
POON Andrew Wing On
QUAN Long
SHENG Ping
TSUI Chi Ying
WONG Kam Sing
YUAN George Jie
YUE Chik Patrick


2013 -