Kevin Jing CHEN
陳敬
PhD in Electrical Engineering
The University of Maryland, 1993

Chair Professor
Department of Electronic and Computer Engineering

Director of Nanosystem Fabrication Facility



(852) 2358 8969
eekjchen@ust.hk
Room 2421
Personal Web

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Google Scholar
npmd96IAAAAJ

ORCID
0000-0002-0659-2022

Scopus ID
1




Research Interest Publications Projects Teaching Assignment RPG Supervision Space used




Research Interest

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Power semiconductor devices and ICs
High-frequency semiconductor devices
Wide-bandgap semiconductor devices
Gallium nitride (GaN)-based microwave power transistors
Compound semiconductor materials and devices



Publications

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All Years 573 2022 0 2021 33 2020 32 2019 35 2018 38 2017 35 2016 400

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2021 33

650-V Normally-off GaN/SiC Cascode Device for Power Switching Applications
IEEE Transactions on Industrial Electronics, September 2021
Zhong, Kailun; Wang, Yuru; Lyu, Gang; Wei, Jin; Sun, Jiahui; Chen, Kevin J. Article
A Physics-Based Empirical Model of Dynamic I_OFFunder Switching Operation in p-GaN Gate Power HEMTs
IEEE Transactions on Power Electronics, v. 36, (9), September 2021, article number 9364720, p. 9796-9805
Wang, Yuru; Chen, Tao; Hua, Mengyuan; Wei, Jin; Zheng, Zheyang; Song, Wenjie; Yang, Song; Zhong, Kailun; Chen, Jing Article
An ultrathin-barrier AlGaN/GaN heterostructure: A recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits
Semiconductor Science and Technology, v. 36, (4), April 2021, article number 044002
Huang, Sen; Wang, Xinhua; Liu, Xinyu; Sun, Qian; Chen, Jing Article
Characterization of Dynamic Threshold Voltage in Schottky-Type p-GaN Gate HEMT Under High-Frequency Switching
IEEE Electron Device Letters, v. 42, (4), April 2021, p. 501-504
Zhong, Kailun; Xu, Han; Zheng, Zheyang; Chen, Junting; Chen, Kevin Jing Article
Characterization Of GaON As A Surface Reinforcement Layer Of p-GaN In Schottky-type p-GaN Gate HEMTs
Applied Physics Letters, v. 119, (5), 2 August 2021, article number 053503
Zhang, Lining; Zheng, Zheyang; Yang, Song; Song, Wenjie; Feng, Sirui; Chen, Jing Article
Compact, Flexible, and Transparent Antennas Based on Embedded Metallic Mesh for Wearable Devices in 5G Wireless Network
IEEE Transactions on Antennas and Propagation, v. 69, (4), April 2021, article number 9254157, p. 1864-1873
Qiu, Haochuan; Liu, Houfang; Jia, Xiufeng; Jiang, Zhou-Ying; Liu, Yan-Hua; Xu, Jianlong; Lu, Tianqi; Shao, Minghao; Ren, Tian-Ling; Chen, Jing Article
Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs
IEEE Electron Device Letters, v. 42, (7), July 2021, article number 9420748, p. 986-989
Chen, Junting; Hua, Mengyuan; Wang, Chengcai; Liu, Ling; Li, Lingling; Wei, Jin; Zhang, Li; Zheng, Zheyang; Chen, Jing Article
Gallium nitride-based complementary logic integrated circuits
Nature Electronics, 19 July 2021
Zheng, Zheyang; Zhang, Li; Song, Wenjie; Feng, Sirui; Xu, Han; Sun, Jiahui; Yang, Song; Chen, Tao; Wei, Jin; Chen, Jing Article
GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution
IEEE Journal of the Electron Devices Society, v. 9, May 2021, article number 9423527, p. 545-551
Wei, Jin; Zhang, Meng; Lyu, Gang; Chen, Jing Article
GaN MIS-HEMTs With Surface Reinforcement for Suppressed Hot-Electron-Induced Degradation
IEEE Electron Device Letters, v. 42, (4), April 2021, p. 489-492
Yang, Song; Zheng, Zheyang; Zhang, Li; Song, Wenjie; Chen, Kevin Jing Article
Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT
IEEE Electron Device Letters, v. 42, (5), May 2021, article number 9383262, p. 669-672
Hua, Mengyuan; Wang, Chengcai; Chen, Junting; Zhao, Junlei; Yang, Song; Zhang, Li; Zheng, Zheyang; Wei, Jin; Chen, Kevin Jing Article
IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs
IEEE Transactions on Industrial Electronics, October 2021
Zhong, Kailun; Wei, Jin; He, Jiabei; Feng, Sirui; Wang, Yuru; Yang, Song; Chen, Jing Article
Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices
IEEE Transactions on Power Electronics, v. 36, (11), April 2021, article number 9416882, p. 12158-12162
Sun, Jiahui; Zheng, Zheyang; Zhong, Kailun; Lyu, Gang; Chen, Jing Article
Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs
IEEE Transactions on Power Electronics, v. 36, (5), May 2021, article number 9222279, p. 5904-5914
Xu, Han; Wei, Jin; Xie, Ruiliang; Zheng, Zheyang; He, Jiabei; Chen, Kevin Jing Article
Monolithic Integration of Gate Driver and Protection Modules with p-GaN Gate Power HEMTs
IEEE Transactions on Industrial Electronics, August 2021, p. 1-1
Xu, Han; Tang, Gaofei; Wei, Jin; Zheng, Zheyang; Chen, Jing Article
Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters
IEEE Electron Device Letters, v. 42, (1), January 2021, article number 9264210, p. 26-29
Zheng, Zheyang; Song, Wenjie; Zhang, Li; Yang, Song; Wei, Jin; Chen, Jing Article
Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs
Applied Physics Letters, v. 118, (16), April 2021, article number 163502
Cheng, Yan; Wang, Yuru; Feng, Sirui; Zheng, Zheyang; Chen, Tao; Lyu, Gang; Ng, Yat Hon; Chen, Kevin Jing Article
OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs
IEEE Journal of Emerging and Selected Topics in Power Electronics, v. 9, (3), June 2021, article number 9144186, p. 3686-3694
Chen, Junting; Hua, Mengyuan; Wei, Jin; He, Jiabei; Wang, Chengcai; Zheng, Zheyang; Chen, Jing Article
On the operating speed and energy efficiency of GaN-based monolithic complementary logic circuits for integrated power conversion systems
Fundamental Research, v. 1, (6), November 2021, p. 661-671
Zheng, Zheyang; Xu, Han; Zhang, Li; Chen, Jing Article
P-GaN Gate HEMT with Surface Reinforcement for Enhanced Gate Reliability
IEEE Electron Device Letters, v. 42, (1), January 2021, article number 9253682, p. 22-25
Zhang, Li; Zheng, Zheyang; Yang, Song; Song, Wenjie; He, Jiabei; Chen, Jing Article
Principles and impacts of dynamic threshold voltage in a p-GaN gate high-electron-mobility transistor
Semiconductor Science and Technology, v. 36, (2), January 2021, article number 024006
Wei, Jin; Xu, Han; Xie, Ruiliang; Chen, Jing Article
RF Linearity Enhancement of GaN-on-Si HEMTs with a Closely Coupled Double-Channel Structure
IEEE Electron Device Letters, v. 42, (8), August 2021, article number 9449839, p. 1116-1119
Song, Wenjie; Zheng, Zheyang; Chen, Tao; Wei, Jin; Yuan, Li; Chen, Jing Article
Short Circuit Capability Characterization And Analysis Of P-GaN Gate High-Electron-Mobility Transistors Under Single And Repetitive Tests
IEEE Transactions on Industrial Electronics, v. 68, (9), September 2021, article number 9145816, p. 8798-8807
Sun, Jiahui; Wei, Jin; Zheng, Zheyang; Chen, Jing Article
Short Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison with SiC MOSFETs
IEEE Transactions on Industrial Electronics, 28 July 2021, article number 9499957
Sun, Jiahui; Zhong, Kailun; Zheng, Zheyang; Lyu, Gang; Chen, Jing Article
Threshold Voltage Instability Of Enhancement-Mode GaN Buried P-Channel MOSFETs
IEEE Electron Device Letters, v. 42, (11), 22 September 2021, p. 1584-1587
Zheng, Zheyang; Zhang, Li; Song, Wenjie; Chen, Tao; Feng, Sirui; Ng, Yat Hon; Sun, Jiahui; Xu, Han; Yang, Song; Wei, Jin; Chen, Kevin J. Article
Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach
Japanese Journal of Applied Physics, v. 60, (7), July 2021, article number 070903
Liao, Yaqiang; Chen, Tao; Wang, Jia; Ando, Yuto; Cai, Wentao; Yang, Xu; Watanabe, Hirotaka; Hirotani, Jun; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Chen, Jing; Amano, Hiroshi Article
A Bootstrap Voltage Clamping Circuit For Dynamic V_TH Characterization In Schottky-Type p-GaN Gate Power HEMT
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452232, p. 39-42
Zhong, Kailun; Xu, Han; Yang, Song; Zheng, Zheyang; Chen, Junting; Chen, Jing Conference paper
Avalanche Capability of 650-V Normally-off GaN/SiC Cascode Power Device
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452274, p. 223-226
Zhong, Kailun; Sun, Jiahui; Wang, Yuru; Lyu, Gang; Feng, Sirui; Chen, Tao; Chen, Jing Conference paper
Comparison of Short Circuit Robustness and Failure Mechanisms of GaN/SiC Cascode Devices and SiC Power MOSFETs
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452266, p. 207-210
Sun, Jiahui; Zhong, Kailun; Zheng, Zheyang; Lyu, Gang; Chen, Jing Conference paper
Impact Ionization Induced Breakdown and Related HTRB Behaviors in 100-V p-GaN Gate HEMTs
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452204, p. 35-38
Cheng, Yan; Wang, Yuru; Feng, Sirui; Zheng, Zheyang; Chen, Tao; Lyu, Gang; Ng, Yat Hon; Chen, Jing Conference paper
Impact Of OFF-state Gate Bias On Dynamic R_ON of p-GaN Gate HEMT
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452256, p. 47-50
Jiang, Zuoheng; Hua, Mengyuan; Huang, Xinran; Li, Lingling; Chen, Junting; Chen, Jing Conference paper
Substrate Effects in GaN-on-Si Integrated Bridge Circuit and Proposal of Engineered Bulk Silicon Substrate for GaN Power ICs
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020, September 2020, article number 9360273
Wei, Jin; Zhang, Meng; Lyu, Gang; Chen, Jing Conference paper
Surface Reinforcement Technology for Suppressing Hot-Carrier-Induced Degradations in p-GaN Gate Power HEMTs
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452259, p. 43-46
Zhang, Li; Yang, Song; Zheng, Zheyang; Song, Wenjie; Liao, Hang; Chen, Jing Conference paper

2020 32

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications
IEEE Transactions on Power Electronics, v. 35, (9), September 2020, p. 9669-9679
Lyu, Gang; Wang, Yuru; Wei, Jin; Zheng, Zheyang; Sun, Jiahui; Zhang, Long; Chen, Kevin J. Article
Characterization and Analysis of Low-Temperature Time-To-Failure Behavior in Forward-Biased Schottky-Type P-GaN Gate HEMTs
Applied Physics Letters, v. 116, (22), June 2020
He, Jiabei; Wei, Jin; Li, Yang; Zheng, Zheyang; Yang, Song; Huang, Baoling; Chen, Jing Article
Characterization of Static and Dynamic Behavior of 1200 V Normally OFF GaN/SiC Cascode Devices
IEEE Transactions on Industrial Electronics, v. 67, (12), December 2020, article number 8936541, p. 10284-10294
Wang, Yuru; Lyu, Gang; Wei, Jin; Zheng, Zheyang; He, Jiabei; Lei, Jiacheng; Chen, Jing Article
Dv/Dt-Control of 1200-V Normally-OFF SiC-JFET/GaN-HEMT Cascode Device
IEEE Transactions on Power Electronics, v. 36, (3), March 2021, article number 9163283, p. 3312-3322
Lyu, Gang; Wang, Yuru; Wei, Jin; Zheng, Zheyang; Chen, Jing Article
E-mode p-n Junction/AlGaN/GaN (PNJ) HEMTs
IEEE Electron Device Letters, v. 41, (4), April 2020, article number 9017996, p. 545-548
Wang, Chengcai; Hua, Mengyuan; Chen, Junting; Yang, Song; Zheng, Zheyang; Wei, Jin; Zhang, Li; Chen, Kevin Jing Article
GaN HEMT With Convergent Channel for Low Intrinsic Knee Voltage
IEEE Electron Device Letters, v. 41, (9), September 2020, article number 9145684, p. 1304-1307
Zheng, Zheyang; Song, Wenjie; Lei, Jiacheng; Qian, Qingkai; Wei, Jin; Hua, Mengyuan; Yang, Song; Zhang, Li; Chen, Kevin J. Article
GaN Power IC Technology on p-GaN Gate HEMT Platform
Japanese journal of applied physics, v. 59, (SG), April 2020, article number SG0801
Wei, Jin; Tang, Gaofei; Xie, Ruiliang; Chen, Kevin Jing Article
High I_ON and I_ON/I_OFF Ratio Enhancement-Mode Buried p-Channel GaN MOSFETs on p-GaN Gate Power HEMT Platform
IEEE Electron Device Letters, v. 41, (1), January 2020, article number 8907389, p. 26-29
Zheng, Zheyang; Song, Wenjie; Zhang, Li; Yang, Song; Wei, Jin; Chen, Jing Article
High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al₂O₃ Gate Dielectric and In Situ Si₃N₄-Cap Passivation
IEEE Transactions on Electron Devices, v. 67, (10), October 2020, article number 9189937, p. 4136-4140
Zhu, Liyang; Zhou, Qi; Yang, Xiu; Lei, Jiacheng; Chen, Kuangli; Luo, Zhihua; Huang, Peng; Zhou, Chunhua; Chen, Jing; Zhang, Bo Article
High-Temperature Characterization of a 1.2-kV SiC MOSFET Using Dynamic Short-Circuit Measurement Technique
IEEE Journal of Emerging and Selected Topics in Power Electronics, v. 8, (1), March 2020, p. 215-222
Sun, Jiahui; Yang, Shu; Xu, Hongyi; Zhang, Long; Wu, Xinke; Sheng, Kuang; Chen, Kevin Jing Article
Hole-Induced Degradation in E-Mode GaN MIS-FETs: Impact of Substrate Terminations
IEEE Transactions on Electron Devices, v. 67, (1), January 2020, article number 8930629, p. 217-223
Hua, Mengyuan; Yang, Song; Wei, Jin; Zheng, Zheyang; He, Jiabei; Chen, Jing Article
Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy
IEEE Electron Device Letters, v. 41, (5), May 2020, article number 9032129, p. 685-688
Yang, Song; Huang, Sen; Wei, Jin; Zheng, Zheyang; Wang, Yuru; He, Jiabei; Chen, Kevin Jing Article
Investigation of SiN_x and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges
Journal of the Electron Devices Society, v. 8, April 2020, p. 358-364
Yang, Song; Tang, Zhikai; Hua, Mengyuan; Zhang, Zhaofu; Wei, Jin; Lu, Yunyou; Chen, Kevin Jing Article
Overcoming the Limitations of Gallium Oxide Through Heterogeneous Integration
Science China Physics, Mechanics & Astronomy, v. 64, (1), 2021, article number 217331
Zhang, Yuhao; Chen, Jing Article
p-GaN Gate Power Transistor with Distributed Built-in Schottky Barrier Diode for Low-Loss Reverse Conduction
IEEE Electron Device Letters, v. 41, (3), March 2020, p. 341-344
Zhang, Li; Wei, Jin; Zheng, Zheyang; Song, Wenjie; Yang, Song; Xu, Han; Chen, Kevin Jing Article
Superjunction IGBT With Conductivity Modulation Actively Controlled by Two Separate Driving Signals
IEEE Transactions on Electron Devices, v. 67, (10), 19 August 2020, article number 9171548, p. 4335-4339
Wei, Jin; Zhang, Meng; Chen, Jing Article
700-V p-GaN Gate HEMT with Low-Voltage Third Quadrant Operation Using Area-Efficient Built-in Diode
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, ISPSD, 2020-September, September 2020, article number 9170075, p. 521-524
Zhang, Li; Wei, Jin; Zheng, Zheyang; Song, Wenjie; Yang, Song; Feng, Sirui; Chen, Kevin J. Conference paper
A Novel Ultra-Thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-Temperature Reverse Blocking Characteristic
2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, 3 November 2020, article number 9278128
Zhu, Liyang; Zhou, Qi; Chen, Kuangli; Yang, Xiu; Lei, Jiacheng; Luo, Zhihua; Zhou, Chunhua; Chen, Kevin J; Zhang, Bo Conference paper
A SPICE-Compatible Equivalent-Circuit Model of Schottky Type p-GaN Gate Power HEMTs with Dynamic Threshold Voltage
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170086, p. 325-328
Xu, Han; Wei, Jin; Xie, Ruiliang; Zheng, Zheyang; Chen, Kevin J. Conference paper
All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-temperature Power Switching Applications
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020, September 2020, article number 9360291
Wang, Yuru; Lyu, Gang; Wei, Jin; Zheng, Zheyang; Zhong, Kailun; Chen, Jing Conference paper
Design of Dual-Gate Superjunction IGBT towards Fully Conductivity-Modulated Bipolar Conduction and Near-Unipolar Turn-Off
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170090, p. 498-501
Wei, Jin; Zhang, Meng; Chen, Kevin J. Conference paper
Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-Sreptember, September 2020, article number 9170101, p. 349-352
Liao, Yaqiang; Chen, Tao; Wang, Jia; Ando, Yuto; Yang, Xu; Watanabe, Hirotaka; Hirotani, Jun; Kushimoto, Maki; Deki, Manato; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Chen, Kevin J.; Amano, Hiroshi Conference paper
Distinct Short Circuit Capability of 650-V p-GaN Gate HEMTs under Single and Repetitive Tests
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-Septeber, September 2020, article number 9170148, p. 313-316
Sun, Jiahui; Wei, Jin; Zheng, Zheyang; Lyu, Gang; Chen, Kevin J. Conference paper
Dv/Dt-control of 1200-V Co-packaged SiC- JFET/GaN-HEMT Cascode Device
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170127, p. 86-89
Lyu, Gang; Wang, Yuru; Wei, Jin; Zheng, Zheyang; Sun, Jiahui; Chen, Kevin J. Conference paper
Dynamic V_th in p-GaN Gate Power HEMTs and Its Impacts upon Power Switching Circuits
2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, 3 November 2020, article number 9278400
Wei, Jin; Xu, Han; Xie, Ruiliang; Chen, Kevin J Conference paper
E-mode p-GaN Gate HEMT with p-FET Bridge for Higher V_TH and Enhanced V_TH Stability
Technical Digest - International Electron Devices Meeting, IEDM, v. 2020-December, December 2020, article number 9371969, p. 23.1.1-23.1.4
Hua, Mengyuan; Chen, Junting; Wang, Chengcai; Liu, Ling; Li, Lingling; Zhao, Junlei; Jiang, Zuoheng; Wei, Jin; Zhang, Li; Zheng, Zheyang; Chen, Kevin Jing Conference paper
E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170039, p. 14-17
Wang, Chengcai; Hua, Mengyuan; Yang, Song; Zhang, Li; Chen, Kevin J. Conference paper
Enhancement-Mode GaN p-Channel MOSFETs for Power Integration
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, ISPSD, v. 2020-September, September 2020, article number 9170081, p. 525-528
Zheng, Zheyang; Song, Wenjie; Zhang, Li; Yang, Song; Xu, Han; Wong, Roy K.-Y.; Wei, Jin; Chen, Kevin J. Conference paper
Gate Reliability and VTH Stability Investigations of p-GaN HEMTs
2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, 3 November 2020, article number 9278305
Hua, Mengyuan; Wang, Chengcai; Chen, Junting; Zhang, Li; Zheng, Zheyang; Chen, Kevin J. Conference paper
Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of p-GaN HEMT under Reverse-bias Stress
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020, September 2020, article number 9170043, p. 18-21
Chen, Junting; Hua, Mengyuan; Jiang, Jiali; He, Jiabei; Wei, Jin; Chen, Kevin J. Conference paper
Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170191, p. 290-293
He, Jiabei; Wei, Jin; Zheng, Zheyang; Yang, Song; Li, Yang; Huang, Baoling; Chen, Kevin J. Conference paper
Planar GaN Power Integration – The World is Flat
Technical Digest - International Electron Devices Meeting, IEDM, v. 2020, December 2020, article number 9372069, p. 27.1.1-27.1.4
Chen, Kevin Jing; Wei, Jin; Tang, Gaofei; Xu, Han; Zheng, Zheyang; Zhang, Li; Song, Wenjie Conference paper

2019 35

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current
npj 2D Materials and Applications, v. 3, (1), 13 June 2019, article number 24
Qian, Qingkai; Lei, Jiacheng; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Zhong, Kailun; Zheng, Zheyang; Chen, Jing Kevin Article
A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor
Applied Physics Express, v.12, (10), 2019, article number 106505
Wang, Yuru; Lyu, Gang; Wei, Jin; Zheng, Zheyang; Lei, Jiacheng; Song, Wenjie; Zhang, Wanlong; Hua, Mengyuan; Chen, Jing Article
Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel
Applied Physics Letters, v. 114, (5), February 2019, article number 053109
Cai, Xiangbin; Hua, Mengyuan; Zhang, Zhaofu; Yang, Song; Zheng, Zheyang; Cai, Yuan; Chen, Jing; Wang, Ning Article
Capture and Emission Mechanisms of Defect States at Interface Between Nitride Semiconductor and Gate Oxides in GaN-based Metal-oxide-semiconductor Power Transistors
Journal of Applied Physics, v. 126, (16), October 2019, article number 164505
Huang, Sen; Wang, Xinhua; Liu, Xinyu; Zhao, Rui; Shi, Wen; Zhang, Yichuan; Fan, Jie; Yin, Haibo; Wei, Ke; Zheng, Yingkui; Shi, Jingyuan; Wang, Xiaolei; Wang, Wenwu; Sun, Qian; Chen, Jing Article
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in p-GaN Gate HEMTs
IEEE Electron Device Letters, v. 40, (4), April 2019, article number 8644033, p. 526-529
Wei, Jin; Xie, Ruiliang; Xu, Han; Wang, Hanxing; Wang, Yuru; Zhong, Kailun; Tang, Gaofei; He, Jiabei; Zhang, Meng; Chen, Kevin Jing Article
Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling
IEEE Journal of Emerging and Selected Topics in Power Electronics, v.7, (3), Septemeber 2019, article number 8746174, p. 1425-1439
Yang, Shu; Han, Shaowen; Sheng, Kuang; Chen, Jing Article
Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride
ACS Applied Electronic Materials, v. 1, (5), 28 May 2019, p. 642-648
Hua, Mengyuan; Cai, Xiangbin; Yang, Song; Zhang, Zhaofu; Zheng, Zheyang; Wang, Ning; Chen, Jing Article
Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type p -GaN Gate HEMTs
IEEE Transactions on Electron Devices, v. 66, (8), August 2019, p. 3453-3458
He, Jiabei; Wei, Jin; Yang, Song; Wang, Yuru; Zhong, Kailun; Chen, Jing Article
Gate Structure Design of SiC Trench IGBTs for Injection-Enhancement Effect
IEEE Transactions on Electron Devices, v. 66, (7), July 2019, p. 3034-3039
Wei, Jin; Zhang, Meng; Jiang, Huaping; Li, Baikui; Chen, Kevin Jing Article
Investigation of Dynamic I_OFF Under Switching Operation in Schottky-Type p-GaN Gate HEMTs
IEEE Transactions on Electron Devices, v. 66, (9), September 2019, article number 8784243, p. 3789-3794
Wang, Yuru; Wei, Jin; Yang, Song; Lei, Jiacheng; Hua, Mengyuan; Chen, Kevin Jing Article
Mechanism and Novel Structure for di/dt Controllability in U-Shaped Channel Silicon-on-Insulator Lateral IGBTs
IEEE Electron Device Letters, v. 40, (10), October 2019, article number 8812703, p. 1658-1661
Zhang, Long; Zhu, Jing; Cao, Shilin; Ma, Jie; Li, Ankang; Wei, Jin; Lyu, Gang; Li, Shaohong; Li, Sheng; Wei, Jiaxing; Wu, Wangran; Sun, Weifeng; Chen, Jing Article
Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates
Applied Physics Express, v. 12, (2), February 2019, article number 024001
Huang, Sen; Wang, Xinhua; Liu, Xinyu; Wang, Yuankun; Fan, Jie; Yang, Shuo; Yin, Haibo; Wei, Ke; Wang, Wenwu; Gao, Hongwei; Zhou, Yu; Sun, Qian; Chen, Jing Article
Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode
IEEE Transactions on Electron Devices, v. 66, (5), May 2019, article number 8672454, p. 2106-2112
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Qian, Qingkai; Hua, Mengyuan; Zheng, Zheyang; Chen, Jing Article
Short Circuit Capability and Short Circuit Induced V_TH Instability of a 1.2kV SiC Power MOSFET
IEEE Journal of Emerging and Selected Topics in Power Electronics, v. 7, (3), September 2019, article number 8695780, p. 1539-1546
Sun, Jiahui; Wei, Jin; Zheng, Zheyang; Wang, Yuru; Chen, Kevin Jing Article
Simulation Study of a Power MOSFET With Built-in Channel Diode for Enhanced Reverse Recovery Performance
IEEE Electron Device Letters, v. 40, (1), January 2019, article number 8534459, p. 79-82
Zhang, Meng; Wei, Jin; Zhou, Xianda; Jiang, Huaping; Li, Baikui; Chen, Jing Article
Superjunction MOSFET With Dual Built-In Schottky Diodes for Fast Reverse Recovery: A Numerical Simulation Study
IEEE Electron Device Letters, v. 40, (7), July 2019, p. 1155-1158
Wei, Jin; Zhang, Meng; Jiang, Huaping; Zhou, Xianda; Li, Baikui; Chen, Jing Article
Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature
Physica Status Solidi (B), November 2019, article number 1900554
Takahashi, Masahiro; Tanaka, Atsushi; Ando, Yuto; Watanabe, Hirotaka; Deki, Manato; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Shima, Kohei; Kojima, Kazunobu; Chichibu, Shigefusa F.; Chen, Jing; Amano, Hiroshi Article
Switching Transient Analysis for Normally-OFF GaN Transistor With p-GaN Gate in a Phase-Leg Circuit
IEEE Transactions on Power Electronics, v. 34, (4), April 2019, article number 8401695, p. 3711-3728
Xie, Ruiliang; Yang, Xu; Xu, Guangzhao; Wei, Jin; Wang, Yuru; Wang, Hanxing; Tian, Mofan; Zhang, Feng; Chen, Wenjie; Wang, Laili; Chen, Jing Article
Characterization of Dynamic I_OFF in Schottky-Type p-GaN Gate HEMTs
Proceedings of the 31st International Symposium on Power Semiconductor Devices & ICs 19-23 May 2019, Shanghai, China / IEEE. Shanghai, China : IEEE, 2019, p. 463-466
Wang, Yuru; Wei, Jin; Yang, Song; Lei, Jiacheng; Hua, Mengyuan; Chen, Jing Conference paper
Characterization of Dynamic I_OFF in Schottky-Type p-GaN Gate HEMTs
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019, May 2019, article number 8757660, p. 463-466
Wang, Yuru; Wei, Jin; Yang, Song; Lei, Jiacheng; Hua, Mengyuan; Chen, Kevin Jing Conference paper
Charge-Modulated Schottky Barrier Lowering Effect in GaN Double-Channel Lateral Power SBDs with Gated Anode
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757606, p. 459-462
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Qian, Qingkai; Hua, Mengyuan; Zheng, Zheyang; Wang, Yuru; Chen, Jing Conference paper
Development of GaN power Integrated Circuits
International conference on Solid State Devices and Materials (SSDM 2019), Nagoya, Japan, 2-5 September 2019
Chen, Kevin Jing; Wei, Jin Conference paper
DLTS Investigation of Transient Capacitance and Trap States on p-GaN Gate HEMT Structures
The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, Washington, United States, 7-12 July 2019
Huang, Sen; Wei, Jin; Yang, Song; Wang, Yuru; Zheng, Zheyang; He, Jiabei; Chen, Kevin Jing Conference paper
Double-Channel High-Electron-Mobility Transistor for Linearity Enhancement in RF/Microwave Applications
2019 Compound Semiconductor Week (CSW), 2019
Song, Wenjie; Zheng, Zheyang; Lei, Jiacheng; Wei, Jin; Yuan, Li; Chen, Jing Conference paper
Dynamic Threshold Voltage in p-GaN Gate HEMT
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757602, p. 291-294
Wei, Jin; Xu, Han; Xie, Ruiliang; Zhang, Meng; Wang, Hanxing; Wang, Yuru; Zhong, Kailun; Hua, Mengyuan; He, Jiabei; Chen, Jing Conference paper
Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2019-May, May 2019, article number 8757600, p. 467-470
Hua, Mengyuan; Yang, Song; Zheng, Zheyang; Wei, Jin; Zhang, Zhaofu; Chen, Jing Conference paper
Identifying the Location of Hole-Induced Gate Degradation in LPCVD?SiN_x/GaN MIS-FETs under High Reverse-Bias Stress
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757652, p. 435-438
Zheng, Zheyang; Hua, Mengyuan; Wei, Jin; Zhang, Zhaofu; Chen, Jing Conference paper
Integrated High-Speed Over-Current Protection Circuit for GaN Power Transistors
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757685, p. 275-278
Xu, Han; Tang, Gaofei; Wei, Jin; Chen, Jing Conference paper
Integration on GaN-on-Si p-GaN gate HEMT platform
The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019), Okinawa, Japan, 10-15 November 2019
Chen, Kevin Jing Conference paper
Investigations of p-shielded SiC trench IGBT with considerations on IE effect, oxide protection and dynamic degradation
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757642, p. 199-202
Wei, Jin; Zhang, Meng; Jiang, Huaping; Li, Baikui; Zheng, Zheyang; Chen, Jing Conference paper
Repetitive Short Circuit Energy Dependent V_TH Instability of 1.2kV SiC Power MOSFETs
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757639, p. 263-266
Sun, Jiahui; Wei, Jin; Zheng, Zheyang; Wang, Yuru; Chen, Jing Conference paper
Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757587, p. 411-414
Huang, Sen; Wang, Xinhua; Liu, Xinyu; Kang, Xuanwu; Fan, Jie; Yang, Shuo; Yin, Haibo; Wei, Ke; Zheng, Yingkui; Wang, Xiaolei; Wang, Wenwu; Shi, Jingyuan; Gao, Hongwei; Sun, Qian; Chen, Jing Conference paper
Reverse-bias stability and reliability of enhancement-mode gan-based mis-fet
Proceedings of International Conference on ASIC, v. 2019, October 2019, article number 8983535
Hua, Mengyuan; Yang, Song; Wei, Jin; Zheng, Zheyang; He, Jiabei; Chen, Jing Conference paper
Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline GaO_xN_{1- x} Channel
Technical Digest - International Electron Devices Meeting, IEDM, v. 2018-December, January 2019, article number 8614687, p. 30.3.1-30.3.4
Hua, Mengyuan; Cai, Xiangbin; Yang, Song; Zhang, Zhaofu; Zheng, Zheyang; Wei, Jin; Wang, Ning; Chen, Jing Conference paper
Temperature-Dependent Gate Degradation of p-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757574, p. 295-298
He, Jiabei; Wei, Jin; Yang, Song; Hua, Mengyuan; Zhong, Kailun; Chen, Jing Conference paper

2018 38

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode
IEEE Electron Device Letters, v. 39, (2), February 2018, article number 8214234, p. 260-263
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Qian, Qingkai; Zheng, Zheyang; Hua, Mengyuan; Chen, Jing Article
Ab initio study of impact of nitridation at amorphous-SiNx/GaN interface
Applied Physics Express, v. 11, (8), August 2018, article number 081003
Zhang, Zhaofu; Hua, Mengyuan; He, Jiabei; Tang, Gaofei; Qian, Qingkai; Chen, Jing Article
An Analytical Investigation on the Charge Distribution and Gate Control in the Normally-Off GaN Double-Channel MOS-HEMT
IEEE Transactions on Electron Devices, v. 65, (7), July 2018, p. 2757-2764
Wei, Jin; Zhang, Meng; Li, Baikui; Tang, Xi; Chen, Jing Article
Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiN_x Gate Dielectric
Physica Status Solidi (A) Applications and Materials, v. 215, (10), May 2018, article number 1700641
Hua, Mengyuan; Qian, Qingkai; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing Article
Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT
IEEE Electron Device Letters, v. 39, (1), January 2018, article number 8101516, p. 59-62
Wei, Jin; Lei, Jiacheng; Tang, Xi; Li, Baikui; Liu, Shenghou; Chen, Jing Article
Dependence of V_TH Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET
IEEE Electron Device Letters, v. 39, (3), March 2018, p. 413-416
Hua, Mengyuan; Wei, Jin; Bao, Qilong; Zhang, Zhaofu; Zheng, Zheyang; Chen, Jing Article
Dynamic OFF-State Current (Dynamic I_OFF) in p-GaN Gate HEMTs With an Ohmic Gate Contact
IEEE Electron Device Letters, 39, 9, September 2018, article number 8402216
Wang, Yuru; Hua, Mengyuan; Tang, Gaofei; Lei, Jiacheng; Zheng, Zheyang; Wei, Jin; Chen, Jing Article
Efficiency Enhancement of InGaN/GaN Blue Light-emitting Diodes with Top Surface Deposition of AlN/Al2O3
Nano Energy, v. 43, January 2018, p. 259-269
Kim, Kwangeun; Hua, Mengyuan; Liu, Dong; Kim, Jisoo; Chen, Kevin J; Ma, Zhenqiang Article
High-capacitance-density p-Gan gate capacitors for high-frequency power integration
IEEE Electron Device Letters, v. 39, (9), September 2018, article number 8408835, p. 1362-1365
Tang, Gaofei; Kwan, Man Ho; Su, Ru Yi; Yao, F. W.; Lin, Y. M.; Yu, J. L.; Yang, Thomas; Chern, Chan Hong; Tsai, Tom; Tuan, Hsiao Chin; Kalnitsky, Alex; Chen, Jing Article
Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET
IEEE Transactions on Electron Devices, v. 65, (9), September 2018, article number 8423427, p. 3831-3838
Hua, Mengyuan; Wei, Jin; Bao, Qilong; Zheng, Zheyang; Zhang, Zhaofu; He, Jiabei; Chen, Jing Article
In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study
Langmuir, v. 34, (8), 2018, p. 2882-2889
Qian, Qingkai; Zhang, Zhaofu; Chen, Kevin J. Article
Interface Engineering of Monolayer MoS₂/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment
ACS Applied Materials Interfaces, v. 10, (20), May 2018, p. 17419-17426
Zhang, Zhaofu; Qian, Qingkai; Li, baikui; Chen, Jing Article
Layer-dependent Second-order Raman Intensity of MoS₂ and WSe₂: Influence of Intervalley Scattering
Physical Review B, v. 97, (16), April 2018, article number 165409
Qian, Qingkai; Zhang, Zhaofu; Chen, Jing Article
Performance and V_TH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially-Recessed MIS-HEMTs with LPCVD-SiN_x/PECVD-SiN_x Gate Dielectric Stack
IEEE Transactions on Electron Devices, v. 65, (8), Aug 2018, article number 8405596, p. 3185-3191
He, Jiabei; Hua, Mengyuan; Zhang, Zhaofu; Chen, Jing Article
Photocurrent characteristics of metal-AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation
Applied Physics Express, v. 11, (5), May 2018, article number 054101
Tang, Xi; Li, Baikui; Chen, Kevin Jing; Wang, Jiannong Article
Photon Emission and Current-collapse Suppression of AlGaN/GaN Field-effect Transistors with Photonic-ohmic Drain at High Temperatures
Applied Physics Express, v. 11, (7), July 2018, article number 071003
Tang, Xi; Zhang, Zhaofu; Wei, Jin; Li, Baikui; Wang, Jiannong; Chen, Jing Article
Reverse-blocking Normally-OFF GaN Double-channel MOS-HEMT with Low Reverse Leakage Current and Low ON-state Resistance
IEEE Electron Device Letters, v. 39, (7), July 2018, p. 1003-1006
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Qian, Qingkai; Zheng, Zheyang; Hua, Mengyuan; Chen, Jing Article
The 2018 GaN power electronics roadmap
Journal of physics. D. Applied physics, v. 51, (16), 26 March 2018, article number 163001
H amano; Y baines; E beam; Matteo borga; T bouchet; Paul r chalker; M charles; Chen, Kevin Jing; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; De Souza, Maria?Merlyne; Decoutere, Stefaan; Cioccio, L.?Di; Eckardt, Bernd; Egawa, Takashi; Fay, P.; Freedsman, Joseph?J.; Guido, L.; H?berlen, Oliver; Haynes, Geoff; Heckel, Thomas; Hemakumara, Dilini; Houston, Peter; Hu, Jie; Hua, Mengyuan; Huang, Qingyun; Huang, Alex; Jiang, Sheng; Kawai, H.; Kinzer, Dan; Kuball, Martin; Kumar, Ashwani; Lee, Kean Boon; Li, Xi; Marcon, Denis; Marz, Martin; McCarthy R.; Meneghesso, Gaudenzio; Meneghini, Matteo; Morvan, E.; Nakajima, A.; Narauyanan, E.M.S.; Oliver, Stephen; Palacios, Tomas; Piedra, Daniel; Plissonnier, M.; Reddy, R.; Sun, Min; Thayne, Iain; Torres, A.; Trivellin, Nicola; Unni, V.; Uren, Michael J.; Van Hon, Marleen; Wallis, David J.; Wang, J.; Xie, J.; Yagi, S.; Yang, Shu; Youtsey, C.; Yu, Ruiyang; Zanoni, Enrico Article
Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices
IEEE Transactions on Electron Devices, v. 65, (1), January 2018, p. 207-214
Huang, Sen; Liu, Xinyu; Wang, Xinhua; Kang, Xuanwu; Zhang, Jinhan; Fan, Jie; Shi, Jingyuan; Wei, Ke; Zheng, Yingkui; Gao, Hongwei; Sun, Qian; Wang, Maojun; Shen, Bo; Chen, Kevin J. Article
V_TH instability of p-GaN gate HEMTs under static and dynamic gate stress
IEEE Electron Device Letters, v. 39, (10), October 2018, article number 8451943, p. 1576-1579
He, Jiabei; Tang, Gaofei; Chen, Jing Article
An Interdigitated GaN MIS-HEMT/SBD Normally-off Power Switching Device with Low ON-resistance and Low Reverse Conduction Loss
Technical Digest - International Electron Devices Meeting, IEDM, v. F134366, 23 January 2018, January 2018, p. 25.2.1-25.2.4
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Qian, Qingkai; Hua, Mengyuan; Zhang, Zhaofu; Zheng, Zheyang; Chen, Jing Conference paper
Dynamic OFF-State Leakage Current (I_OFF) in GaN power HEMTs
International Workshop on Nitride Semiconductor 2018 (IWN2018), Kanazawa, Japan, 11-16 November 2018
Wang, Yuru; Hua, Mengyuan; Tang, Gaofei; Zheng, Zheyang; Yang, Song; Chen, Jing Conference paper
Dynamic OFF-State Leakage Current (I_OFF) in GaN Power HEMTs
International Workshop on Nitride Semiconductors (IWN 2018), Kanazawa, Japan, 11-16 November 2018
Wang, Yuru; Hua, Mengyuan; Tang, Gaofei; Zheng, Zheyang; Yang, Song; Chen, Jing Conference paper
Enhancement-mode GaN-based MIS-FETs and MIS-HEMTs
Materials Research Society Spring Meeting & Exhibit (2018 MRS), Phoenix, USA, 2-6 April 2018
Chen, Kevin Jing; Hua, Mengyuan Conference paper
GaN Power Integrated Circuits
International Workshop on Nitride Semiconductors (IWN 2018), Kanazawa, Japan, 11-16 November 2018
Chen, Kevin Jing; Tang, Gaofei Conference paper
High-performance Enhancement-mode GaN Power MIS-FET with Interface Protection Layer
International Conference on Digital Signal Processing, DSP, v. 2018-November, January 2019, article number 8631634
Hua, Mengyuan; Chen, Jing Conference paper
High-speed, high-reliability GaN power device with integrated gate driver
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, 22 June 2018, p. 76-79
Tang, Gaofei; Kwan, M.-H.; Zhang, Zhaofu; He, Jiabei; Lei, Jiacheng; Su, R.-Y.; Yao, F.-W.; Lin, Y.-M.; Yu, J.-L.; Yang, Thomas; Chern, Chan-Hong; Tsai, Tom; Tuan, H. C.; Kalnitsky, Alexander; Chen, Jing Conference paper
Modeling the gate driver IC for GaN transistor: A black-box approach
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, v. 2018-March, April 2018, p. 2900-2904
Xie, Ruiliang; Xu, Guangzhao; Yang, Xu; Tang, Gaofei; Wei, Jin; Tian, Yidong; Zhang, Feng; Chen, Wenjie; Wang, Laili; Chen, Jing Conference paper
Modification of amorphous-SiNx/GaN interface trap density by nitridation: A first-principles calculation study
2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018, Hyatt RegencyAustin, United States, 7-10 May 2018
Zhang, Zhaofu; Hua, Mengyuan; He, Jiabei; Qian, Qingkai; Chen, Jing Conference paper
Monitoring the Surface Functionalizaion of MoS2 and WSe2 for High-k Integration Using In Situ Resonant Raman Spectroscopy - A First-principle study
Materials Research Society Spring Meeting & Exhibit (2018 MRS), Phoenix, USA, 2-6 April 2018
Qian, Qingkai; Zhang, Zhaofu; Chen, Jing Conference paper
Opto-electrical memory devices realized on AlGaN/GaN heterostructure platform
International Workshop on Nitride Semiconductors, IWN2018, Kanazawa, Japan, 11-16 Novemner 2018
Tang, Xi; Zhou, Q; Qiu, R; Zheng, R; Li, Baikui; Chen, Jing; Wang, Jiannong Conference paper
Performance and stability of enhancement-mode fully-recessed GaN MIS-FETs and partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx gate dielectric
2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018, Hyatt RegencyAustin, United States, 7-10 May 2018
He, Jiabei; Hua, Mengyuan; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing Conference paper
Reliability and Stability of Normally-off GaN Power MIS-FETs with LPCVD-SiNx Gate Dielectric
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), December 2018, article number 8565824, p. 527-530
Hua, Mengyuan; Chen, Jing Conference paper
Reverse-Bias Stability and Reliability of Hole-Barrier-Free E-mode LPCVD-SiNx/GaN MIS-FETs
Technical Digest - International Electron Devices Meeting, IEDM, v. F134366, 23 January 2018, p. 33.2.1-33.2.4
Hua, Mengyuan; Wei, Jin; Bao, Qilong; He, Jiabei; Zhang, Zhaofu; Zheng, Zheyang; Lei, Jiacheng; Chen, Jing Conference paper
Reverse-blocking AlGaN/GaN Normally-off MIS-HEMT with Double-recessed Gated Schottky Drain
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 276-279
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Chen, Jing Conference paper
SiC Trench IGBT with Diode-clamped P-shield for Oxide Protection and Enhanced Conductivity Modulation
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 411-414
Wei, Jin; Zhang, Meng; Jiang, Huaping; To, Suet; Kim, Sunghan; Kim, Jun Youn; Chen, Jing Conference paper
Threshold Voltage Instability in p-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress
International Workshop on Nitride Semiconductor 2018 (IWN2018), Kanazawa, Japan, 11-16 November 2018
He, Jiabei; Tang, Gaofei; Hua, Mengyuan; Chen, Jing Conference paper
Understanding the Dynamic Behaviro in GaN-on-Si Power Devices and IC’s
The International Workshop on Power Supply On Chip (PwrSoC 2018), Hsinchu, Taiwan, 17-19 October 2018
Chen, Kevin Jing Conference paper

2017 35

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance
IEEE Transactions on Device and Materials Reliability, v. 17, (2), June 2017, article number 7898842, p. 432-437
Zhang, Meng; Wei, Jin; Jiang, Huaping; Chen, Jing; Cheng, Ching Hsiang Article
An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration
IEEE Transactions on Power Electronics, v. 32, (8), August 2017, article number 7592895, p. 6416-6433
Xie, Ruiliang; Wang, Hanxing; Tang, Gaofei; Yang, Xu; Chen, Kevin J. Article
Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform
IEEE ELECTRON DEVICE LETTERS, v. 38, (9), September 2017, p. 1282-1285
Tang, Gaofei; Kwan, Alex M. H.; Wong, Roy K. Y.; Lei, Jiacheng; Su, R. Y.; Yao, F. W.; Lin, Y. M.; Yu, J. L.; Tsai, Tom; Tuan, H. C.; Kalnitsky, Alexander; Chen, Kevin J. Article
Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations
IEEE Transactions on Electron Devices, v. 64, (6), June 2017, p. 2592-2598
Wei, Jin; Zhang, Meng; Jiang, Huaping; Wang, Hanxing; Chen, Jing Article
Dynamic RON of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination
IEEE Electron Device Letters, v. 38, (7), July 2017, article number 7933267, p. 937-940
Tang, Gaofei; Wei, Jin; Zhang, Zhaofu; Tang, Xi; Hua, Mengyuan; Wang, Hanxing; Chen, Jing Article
Enhanced Dielectric Deposition on Single-Layer MoS2 with Low Damage Using Remote N2 Plasma Treatment
Nanotechnology, v. 28, (17), April 2017, article number 175202
Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Tang, Gaifei; Lei, Jiacheng; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Jing Article
GaN-on-Si Power Technology: Devices and Applications
IEEE Transactions on Electron Devices, v. 64, (3), March 2017, p. 779-795, Article number 7862945
Chen, Kevin Jing; H?berlen, Oliver; Lidow, Alex; Tsai, Chun Lin; Ueda, Tetsuzo; Uemoto, Yasuhiro; Wu, Yifeng Article
Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers
IEEE Electron Device Letters, v. 38, (8), August 2017, article number 7955040, p. 1075-1078
Liu, Shaofei; Wang, Maojun; Tao, Ming; Yin, Ruiyuan; Gao, Jingnan; Sun, Haozhe; Lin, Wei; Wen, Cheng P.; Wang, Jinyan; Wu, Wengang; Hao, Yilong; Zhang, Zhaofu; Chen, Jing; Shen, Bo Article
Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices
IEEE Transactions on Electron Devices, v. 64, (12), December 2017, article number 8093740, p. 5048-5056
Yang, Shu; Zhou, Chunhua; Han, Shaowen; Wei, Jin; Sheng, Kuang; Chen, Jing Article
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations
IEEE Transactions on Power Electronics, v. 32, (7), July 2017, article number 7570254, p. 5539-5549
Wang, Hanxing; Wei, Jin; Xie, Ruiliang; Liu, Cheng; Tang, Gaofei; Chen, Jing Article
Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer
IEEE Electron Device Letters, v. 38, (7), July 2017, article number 7932959, p. 929-932
Hua, Mengyuan; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Qian, Qingkai; Cai, Xiangbin; Wang, Ning; Chen, Jing Article
Remote N₂ Plasma Treatment to Deposit Ultrathin High-k Dielectric As Tunneling Contact Layer for Single-layer MoS₂ MOSFET
Applied Physics Express, v. 10, (12), December 2017, article number 125201
Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Wei, Jin; Chen, Jing Article
Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy
IEEE Transactions on Electron Devices, v. 64, (10), October 2017, p. 4036-4043
Zhang, Zhaofu; Li, Baikui; Qian, Qingkai; Tang, Xi; Hua, Mengyuan; Huang, Baoling; Chen, Kevin J. Article
SiC Trench MOSFET with Self-biased p-shield for Low R_ON-SP and Low OFF-state Oxide Field
IET Power Electronnics, v. 10, (10), 18 August 2017, p. 1208-1213
Zhang, Meng; Wei, Jin; Jiang, Huaping; Chen, Jing; Cheng, Ching Hsiang Article
Trapping Mechanisms in Insulated-Gate GaN Power Devices: Understanding and Characterization Techniques
Physica Status Solidi (A) Applications and Materials Science, v. 214, (3), March 2017, article number 1600607
Yang, Shu; Liu, Shenghou; Lu, Yunyou; Chen, Kevin J Article
Fluorine-Implanted Enhancement-Mode Transistors
Power GaN Devices: Materials, Applications and Reliability / Editors: Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni. Switzerland : Springer International Publishing, 2017, p. 273-293, Series: Power Electronics and Power Systems
Chen, Kevin Jing Book chapter
Recent Progress in GaN-on-Si HEMT
Handbook of GaN Semiconductor Materials and Devices / Wengang (Wayne) Bi, Haochung (Henry) Kuo, Peicheng Ku, Bo Shen, editors. Boca Raton : CRC Press, 2017, p. 347-366, Book series: Optics and Optoelectronics
Chen, Kevin Jing; Shu, Yang Book chapter
An Analytical Model for False Turn-on Evaluation of GaN Transistor in Bridge-Leg Configuration
ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings, February 2017, article number 7854840
Xie, Ruiliang; Wang, Hanxing; Tang, Gaofei; Yang, Xu; Chen, Kevin J. Conference paper
Buffer Trapping-induced R_ON Degradation in GaN-on-Si Power Transistors: Role of Electron Injection From Si Substrate
Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, July 2017, article number 7988903, p. 101-104
Yang, Shu; Zhou, Chunhua; Han, Shaowen; Sheng, Kuang; Chen, Kevinjing Conference paper
Characterization and analysis of dynamic RON of GaN-on-Si lateral power devices with grounded and floating Si substrate
12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, 24-28 July 2017
Tang, Gaofei; Wei, Jin; Zhang, Zhaofu; Tang, Xi; Hua, Mengyuan; Wang, Hanxing; Chen, Jing Conference paper
Charge Storage Effect in SiC Trench MOSFET with a Floating p-shield and its Impact on Dynamic Performances
Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, article number 7988985, p. 387-390
Wei, Jin; Zhang, Meng; Jiang, Huaping; Wang, Hanxing; Chen, Jing Conference paper
Comparison of E-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Stack
12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, 24-28 July 2017
He, Jiabei; Hua, Mengyuan; Tang, Gaofei; Zhang, Zhaofu; Chen, Kevin J. Conference paper
Effective Cross-Plane Thermal Conductivity of GaN-on-Si (111) Epi-layers Evaluated by 3-Omega Technique
12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, 24-28 July 2017
Bao, Qilong; Li, yang; Zhang, Zhaofu; Qian, Qingkai; Lei, Jiacheng; Tang, Gaofei; Huang, Baoling; Chen, Kevin Jing Conference paper
High-performance Fully-recessed Enhancement-mode GaN MIS-FETs with Crystalline Oxide Interlayer
Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, p. 89-92
Hua, Mengyuan; Zhang, Zhaofu; Qian, Qingkai; Wei, Jin; Bao, Qilong; Chen, Jing Conference paper
High-speed Power MOSFET with Low Reverse Transfer Capacitance Using a Trench/planar Gate Architecture
Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, article number 7988956, p. 331-334
Wei, Jin; Wang, Yuru; Zhang, Meng; Jiang, Huaping; Chen, Jing Conference paper
Impact of Substrate Termination on Dynamic Performance of GaN-on-Si Lateral Power Devices
Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, article number 7988920, p. 235-238
Tang, Gaofei; Wei, Jin; Zhang, Zhaofu; Tang, Xi; Hua, Mengyuan; Wang, Hanxing; Chen, Jing Conference paper
Integration of LPCVD-SiNx Gate Dielectric with Recessed-Gate E-Mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime
Technical Digest - International Electron Devices Meeting, IEDM, January 2017, article number 7838388, p. 10.4.1-10.4.4
Hua, Mengyuan; Zhang, Zhaofu; Wei, Jin; Lei, Jiacheng; Tang, Gaofei; Fu, Kai; Cai, Yong; Zhang, Baoshun; Chen, Jing Conference paper
Low-Resistance Contact to Single-Layer MoS2 by Depositing Ultrathin High-k Dielectric with Remote N2 Plasma Treatment as Tunneling Layer
International Conference on Solid State Device and Materials (SSDM 2017), Sendai, Japan, 19-22 September 2017
Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Wei, Jin; Lei, Jiacheng; Chen, Jing Conference paper
Maximizing the Performance of 650 v p-GaN Gate HEMTs: Dynamic Ron Characterization and Gate-Drive Design Considerations
ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings, February 2017, article number 7855231
Wang, Hanxing; Xie, Ruiliang; Liu, Cheng; Wei, Jin; Tang, Gaofei; Chen, Jing Conference paper
Monolithic Intergration of E/D-Mode HEMTs for Logic Circuit on the p-GaN Gate Technology Platform
12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, 24-28 July 2017
Tang, Gaofei; Wang, Hanxing; Lei, Jiacheng; Chen, kevin jing Conference paper
Nitridation of GaN Surface for Power Device Application: A First-Principles Study
Technical Digest - International Electron Devices Meeting, IEDM, January 2017, article number 7838552, p. 36.2.1-36.2.4
Zhang, Zhaofu; Li, Baikui; Tang, Xi; Qian, Qingkai; Hua, Mengyuan; Huang, Baoling; Chen, Kevin Jing Conference paper
PBTI and NBTI of Fully-recessed E-mode LPCVD-SiNx/GaN MIS-FETs with PECVD-SiNx Interfacial Protection Layer
12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, 24-28 July 2017
Hua, Mengyuan; Qian, Qingkai; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing Conference paper
Role of Shallow Surface Traps and Polarization Charges in Nitride-based Passivation for AlGaN/GaN Heterojunction FET
2016 International Forum on Wide Bandgap Semiconductors China, IFWS 2016 - Conference Proceedings, January 2017, article number 7803763, p. 85-88
Yang, Song; Tang, Zhikai; Lu, Yunyou; Jiang, Qimeng; Zhang, Anping; Chen, Kevin J Conference paper
Switching Transient Analysis for Normally-off GaN Transistors With p-GaN Gate in a Phase-leg Circuit
2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017, v. 2017-January, November 2017, article number 8095810, p. 399-404
Xie, Ruiliang; Xu, Guangzhao; Yang, Xu; Wang, Hanxing; Tian, Mofan; Tian, Yidong; Zhang, Feng; Chen, Wenjie; Wang, Laili; Chen, Jing Conference paper
TDDB and PBTI Characterizations of Fully-recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack
CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, 2017
Hua, Mengyuan; Qian, Qingkai; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing Conference paper

2016 23

Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors with Photonic-Ohmic Drain
IEEE Transactions on Electron Devices, v. 63, (7), July 2016, Article number 7478098, p. 2831-2837
Tang, Xi; Li, Baikui; Zhang, Zhaofu; Tang, Gaofei; Wei, Jin; Chen, Jing Article
Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
IEEE Electron Device Letters, v. 37, (3), March 2016, article number 7386610, p. 265-268
Hua, Mengyuan; Lu, Yunyou; Liu, Shenghou; Liu, Cheng; Fu, Kai; Cai, Yong; Zhang, Baoshun; Chen, Kevin J. Article
Dynamic Gate Stress-induced VTH Shift and its Impact on Dynamic RON in GaN MIS-HEMTs
IEEE Electron Device Letters, v. 37, (2), February 2016, article number 7347343, p. 157-160
Yang, Shihe; Lu, Yunyou; Wang, Hanxing; Liu, Shenghou; Liu, Cheng; Chen, Kevin J. Article
Gate stack engineering for GaN lateral power transistors
Semiconductor Science and Technology, v. 31, (2), February 2016, article number 024001
Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Chen, Kevin Jing Article
High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
IEEE Electron Device Letters, v. 37, (12), December 2016, article number 7590090, p. 1617-1620
Huang, Sen; Liu, Xinyu; Wang, Xinhua; Kang, Xuanwu; Zhang, Jinhan; Bao, Qilong; Wei, Ke; Zheng, Yingkui; Zhao, Chao; Gao, Hongwei; Sun, Qian; Zhang, Zhaofu; Chen, Kevin J. Article
Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
Scientific Reports, v. 6, June 2016, article number 27676
Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J. Article
Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges
IEEE Electron Device Letters, v. 37, (11), November 2016, article number 7567511, p. 1458-1461
Wei, Jin; Zhang, Meng; Jiang, Huaping; Cheng, Ching-Hsiang; Chen, Jing Article
On-Chip Addressable Schottky-On-Heterojunction Light-Emitting Diode Arrays On AlGaN/GaN-On-Si Platform
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 13, (5-6), May 2016, p. 365-368
Tang, Xi; Li, Baikui; Lu, Yunyou; Chen, Jing Article
Optoelectronic devices on AlGaN/GaN HEMT platform
Physica Status Solidi (A) Applications and Materials Science, v. 213, (5), May 2016, p. 1213-1221
Li, Baikui; Tang, Xi; Wang, Jiannong; Chen, Jing Article
Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications
IEEE Transactions on Electron Devices, v. 63, (6), June 2016, article number 7466844, p. 2469-2473
Wei, Jin; Jiang, Huaping; Jiang, Qimeng; Chen, Jing Article
Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform
IEEE Photonics Technology Letters, v. 28, (24), December 2016, article number 7725988, p. 2803-2806
Li, Baikui; Tang, Xi; Tang, Gaofei; Wei, Jin; Wang, Jiannong; Chen, Jing Article
Toward Reliable MIS- and MOS-gate Structures for GaN Lateral Power Devices
Physica Status Solidi (A) Applications and Materials Science, v. 213, (4), April 2016, p. 861-867
Chen, Kevin J.; Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan Article
面向高性能GaN基功率電子的器件物理研究
中國科學:物理學 力學 天文學=Scientia Sinica: Physica, Mechanica et Astronomica, v. 46, (10), July 2016, article number 107307, p. 91-106
黃森; 楊樹; 唐智凱; 化夢媛; 王鑫華; 魏珂; 魏珂; 包琦龍; 劉新宇; 陳敬 Article
Comparison of SiN_x and AlN Passivations for AlGaN/GaN HEMTs
229th ECS Meeting, San Diego, CA, 29 May - 2 June, 2016
Yang, Song; Lei, Lei; Yu, Kun; Zhang, Anping; Chen, Kevin J. Conference paper
Compatibility of AlN/SiNx Passivation with High-Temperature Process
CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology, 2016, p. 233-236
Hua, Mengyuan; Lu, Yunyou; Liu, Shenghou; Liu, Cheng; Fu, Kai; Cai, Yong; Zhang, Baoshun; Chen, Kevin J. Conference paper
Critical Heterostructure Design for Low On-Resistance Normally-Off Double-Channel MOS-HEMT
28th International Conference on Indium Phosphide & Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, Japan, 26-30 June 2016
Wei, Jin; Liu, Shenghou; Li, Baikui; Tang, Xi; Tang, Gaofei; Zhang, Zhaofu; Chen, Jing Conference paper
Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
Technical Digest - International Electron Devices Meeting, IEDM, 2016-February, February 2016 , article number 7409662, p. 9.4.1-9.4.4
Wei, Jin; Liu, Shenghou; Li, Baikui; Tang, Xi; Zhang, Zhaofu; Tang, Gaofei; Liu, Cheng; Lu, Yunyou; Hua, Mengyuan; Chen, Jing Conference paper
Enhancing dynamic performance of GaN-on-Si power devices with on-chip photon pumping
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, July 2017, article number 7998839, p. 61-64
Li, Baikui; Tang, Xi; Wang, Jiannong; Chen, Kevin J Conference paper
First-Principles Study of GaN Surface Electronic Structures with Ga, O or N Adatom
47th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, 8-10 December 2016
Zhang, Zhaofu; Li, Baikui; Tang, Xi; Qian, Qingkai; Hua, Mengyuan; Lei, Jiacheng; Huang, Baoling; Chen, Kevin Jing Conference paper
Impact of Integrated Photonic-Ohmic Drain on Static and Dynamic Characteristics of GaN-on-Si Heterojunction Power Transistors
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520770, p. 31-34
Tang, Xi; Li, Baikui; Wang, Hanxing; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Chen, Jing Conference paper
Impact of V-TH Shift on R-ON in E/D-mode GaN-on-Si Power Transistors: Role of Dynamic Stress and Gate Overdrive
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520828, p. 263-266
Yang, Shu; Lu, Yunyou; Liu, Shenghou; Wang, Hanxing; Liu, Cheng; Chen, Kevin J Conference paper
Performance Enhancement and Characterization Techniques for GaN Power Devices
28th International Conference on Indium Phosphide & Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), June 26-30, 2016
Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Longobardi, Giorgia; Udrea, Florin; Chen, Kevin J Conference paper
Proposal of a Novel GaN/SiC Hybrid FET (HyFET) with Enhanced Performance for High-Voltage Switching Applications
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520787, p. 99-102
Wei, Jin; Jiang, Huaping; Jiang, Qimeng; Chen, Jing Conference paper

2015 36

A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters
IEEE Transactions on Electron Devices, v. 62, (4), April 2015, article number 7039245, p. 1143-1149
Wang, Han Xing; Kwan, Alex Man Ho; Jiang, Qimeng; Chen, Kevin Jing Article
AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
IEEE Transactions on Electron Devices, v. 62, (6), June 2015, article number 7103310, p. 1870-1878
Yang, Shu; Liu, Shenghou; Lu, Yunyou; Liu, Cheng; Chen, Kevin Jing Article
An Analytical Study of Power Delivery Systems for Many-Core Processors Using On-Chip and Off-Chip Voltage Regulators
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, v. 34, (9), September 2015, article number 7061385, p. 1401-1414
Wang, Xuan; Xu, Jiang; Wang, Zhe; Chen, Kevin J.; Wu, Xiaowen; Wang, Zhehui; Yang, Peng; Duong, Luan Huu Kinh Article
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
IEEE Transactions on Electron Devices, v. 62, (10), October 2015, article number 7234887, p. 3215-3222
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen,Jing Kevin Article
Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
Applied Physics Express, v. 8, (6), June 2015, article number 064101
Lu, Yunyou; Jiang, Qimeng; Tang, Zhikai; Yang, Shu; Liu, Cheng; Chen, Kevin Jing Article
Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High Electron Mobility Transistors under Hard Switching Operation
IEEE Electron Device Letters, v. 36, (8), August 2015, p. 760-762
Wang, Hanxing; Liu, Cheng; Jiang, Qimeng; Tang, Zhikai; Chen, Kevin J. Article
GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN_x as Gate Dielectric
IEEE Electron Device Letters, v. 36, (5), May 2015, article number 7055356, p. 448-450
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen, Kevin Jing Article
High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique
IEEE Electron Device Letters, v. 36, (8), August 2015, article number 7123580, p. 754-756
Huang, Sen; Liu, Xinyu; Zhang, Jinhan; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Zheng, Yingkui; Liu, Honggang; Jin, Zhi; Zhao, Chao; Liu, Cheng; Liu, Shenghou; Yang, Shu; Zhang, Jincheng; Hao, Yue; Chen, Kevin Jing Article
Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer
Applied Physics Letters, v. 106, (5), February 2015, article number 051605
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Shen, Bo; Chen, Kevin Jing Article
Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor
IEEE Electron Device Letters, v. 36, (12), December 2015, article number 7295542, p. 1287-1290
Wei, Jin; Liu, Shenghou; Li, Baikui; Tang, Xi; Lu, Yunyou; Liu, Cheng; Hua, Mengyuan; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing Article
Normally OFF Al₂O₃-AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation
IEEE Transactions on Electron Devices, v. 62, (3), Mar 2015, article number 7015556, p. 821-827
Lu, Yunyou; Li, Baikui; Tang, Xi; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin J. Article
O-3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors
Applied Physics Letters, v. 106, (3), January 2015, article number 033507
Huang, Sen; Liu, Xinyu; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Sun, Bing; Yang, Xuelin; Shen, Bo; Liu, Cheng; Liu, Shenghou; Hua, Mengyuan; Yang, Shu; Chen,Jing Kevin Article
Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode
Applied Physics Letters, v. 106, (9), March 2015, article number 093505
Li, Baikui; Tang, Xi; Chen, Kevin J. Article
Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment
IEEE Electron Device Letters, v. 36, (8), August 2015, article number 7123614, p. 757-759
Lin, Shuxun; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Yu, Min; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Huang, Sen; Chen, Kevin Jing; Shen, Bo Article
Temperature Dependence of the Surface-and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate
IEEE Transactions on Electron Devices, v. 62, (8), August 2015, article number 7154486, p. 2475-2480
Zhang, Chuan; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing; Shen, Bo Article
Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier
IEEE Electron Device Letters, v. 36, (4), April 2015, article number 7042345, p. 318-320
Liu, Cheng; Yang, Shu; Liu, Shenghou; Tang, Zhikai; Wang, Hanxing; Jiang, Qimeng; Chen, Kevin J. Article
650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2015-June, June 2015 , article number 7123434, p. 241-244
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Lu, Yunyou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen, Kevin J. Conference paper
Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs using Schottky-on-Heterojunction Light Emitting Devices
2015 Compound Semiconductor Week (CSW 2015), University of California Santa Barbara, CA, USA, 28 June - 2 July 2015
Tang, Xi; Li, Baikui; Chen, Kevin J. Conference paper
Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs Using Schottky-on-Heterojunction Light-Emitting Devices
42th International Symposium on Compound Semiconductors (ISCS 2015), Santa Barbara, CA, USA, 28 June - 2 July 2015
Tang, Xi; Li, Baikui; Chen, Kevin J. Conference paper
Differences between SiNx and AlN passivations for AlGaN/GaN HEMTs: a TCAD-simulation based study
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Yang, Song; Tang, Zhikai; Lu, Yunyou; Zhang, Anping; Chen, Kevin J. Conference paper
First Demonstration of 0.27-Ω 600-V/10-A GaN-on-Si Power MIS-HEMTs in a 200-mm Hybrid CMOS-/Au-Compatible Process Line
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Yuan, Li; Xiao, Xia; Tang, Longjuan; Li, Huahua; Jiang, Yuanqi; Chen, Kevin J.; Yen, Allen Conference paper
Gate Leakage and Time-Dependent Dielectric Breakdown Characteristics of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs
11th International Conference on Nitride Semiconductors, Beijing, China, September 2015
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen, Kevin Jing Conference paper
Hard Switching Characteristics of AlN-Passivated AlGaN/GaN on silicon MIS-HEMTs
11th International Conference on Nitride Semiconductors, Beijing, China, 30 August - 4 September 2015
Wang, Hanxing; Liu, Cheng; Jiang, Qimeng; Tang, Zhikai; Chen, Kevin J. Conference paper
High-performance gate-recessed normally-off GaN MIS-HEMTs with thin barrier layer
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Liu, Shenghou; Yang, Shu; Liu, Cheng; Lu, Yunyou; Chen, Kevin J. Conference paper
III-nitride Transistors with Photonic-ohmic Drain for Enhanced Dynamic Performances
2015 IEEE International Electron Devices Meeting (IEDM), The Institute of Electrical and Electronics Engineers, 2015, p. 3531-3534
Tang, Xi; Li, Baikui; Lu, Yunyou; Wang, Hanxing; Liu, Cheng; Wei, Jin; Chen, Jing Conference paper
Improved high-voltage performance of normally-OFF GaN MIS-HEMTs using fluorine-implanted enhanced back barrier
11th International Conference on Nitride Semiconductors, Beijing, China, 30 August - 4 September 2015
Liu, Cheng; Wei, Jin; Liu, Shenghou; Wang, Hanxing; Tang, Zhikai; Yang, Shu; Chen, Jing Conference paper
Improved Thermal Stabilities in Normally-Off GaN MIS-HEMTs
2015 CS ManTech Digest, 2015, p. 159-162
Liu, Cheng; Wang, Hanxing; Yang, Shu; Lu, Yunyou; Liu, Shenghou; Tang, Zhikai; Jiang, Qimeng; Chen, Jing Kevin Conference paper
Nitridation Interfacial-layer Technology for Enhanced Stability in GaN-based Power Devices
RFIT 2015 Proceedings, IEEE Microwave Theory and Techniques Society (IEEE MTT-S), 2015, p. 220-222
Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin J Conference paper
Normally-off GaN MIS-HEMT with Improved Thermal Stability in DC and Dynamic Performance
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 213-216
Liu, Cheng; Wang, Hanxing; Yang, Shu; Lu, Yunyou; Liu, Shenghou; Tang, Zhikai; Jiang, Qimeng; Huang, Sen; Chen, Kevin Jing Conference paper
On-Chip Addressable Schottky-On-Heterojunction Light-Emitting Diode Arrays On AlGaN/GaN-On-Si Platform
11th International Conference on Nitride Semiconductors, Beijing, China, 30 August - 4 September 2015
Tang, Xi; Li, Baikui; Lu, Yunyou; Chen, Kevin J. Conference paper
On-chip Optical Pumping of Deep Traps in AlGaN/GaN-on-Si Power HEMTs
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers ( IEEE ), 2015, p. 201-204
Tang, Xi; Li, Baikui; Chen, Kevin Jing Conference paper
Reduction of the Current Collapse in GaN High Electron Mobility Transistors by a Novel Surface Treatment
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Lin, Shuxun; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Yu, Min; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Shen, Bo; Chen, Kevin J. Conference paper
Schottky-on-Heterojunction Optoelectronic Functional Devices Realized on AlGaN / GaN-on-Si Platform
International Electron Devices Meeting, IEDM, v. 2015, February 2015, article number 113077
Li, Baikui; Tang, Xi; Jiang, Qimeng; Lu, Yunyou; Wang, Hanxing; Wang, Jiannong; Chen, Kevin Jing Conference paper
Suppressed Substrate-Coupled Cross-Talk under AC High-Voltage Switching on the AlGaN/GaN-on-Si Smart Power IC Platform
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September, 2015
Tang, Xi; Jiang, Qimeng; Wang, Hanxing; Li, Baikui; Chen, Kevin J. Conference paper
Technology Challenges of GaN Heterojunction Power Devices
The 7th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2015), Seoul, Korea, 17-20 May 2015
Chen, Kevin J. Conference paper
Toward reliable MIS- and MOS-gate structures for GaN power devices
42nd Int. Symp. on Compound Semiconductors (ISCS), Santa Barbara, USA, 28 June - 2 July 2015
Chen, Kevin J.; Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Tang, Zhikai Conference paper

2014 28

900 V/1.6 mΩ · cm2 normally off Al 2O3/GaN MOSFET on silicon substrate
IEEE Transactions on Electron Devices, v. 61, (6), 2014, article number 6807793, p. 2035-2040
Wang, Maojun; Wang, Ye; Zhang, Chuan; Xie, Bing; Wen, Cheng; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing; Shen, Bo Article
A Highly Linear Integrated Temperature Sensor on a GaN Smart Power IC Platform
IEEE Transactions on Electron Devices, v. 61, (8), 2014, article number 6832561, p. 2970-2976
Kwan, Alex Man Ho; Guan, Yue; Liu, Xiaosen; Chen, Kevin Jing Article
A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, v. 61, (3), 2014, article number 6722951, p. 762-768
Jiang, Qimeng; Tang, Zhikai; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing Article
Al2O3/AlN/GaN MOS-channel-HEMTs with an AlN interfacial layer
IEEE Electron Device Letters, v. 35, (7), 2014, article number 6823096, p. 723-725
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin Jing Article
AlN/GaN Heteostructure TFTs with Plasma Enhanced Atomic Layer Deposition of Epitaxial AlN Thin Film
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 953-956
Liu, Cheng; Liu, Shenghou; Huang, Sen; Li, Baikui; Chen, Kevin Jing Article
Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components
IEEE Transactions on Electron Devices, v. 61, (3), 2014, article number 6716042, p. 755-761
Zhang, Aixi; Zhang, Lining; Tang, Zhikai; Cheng, Xiaoxu; Wang, Yan; Chen, Kevin Jing; Chan, Man Sun Article
GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 949-952
Yang, Shu; Jiang, Qimeng; Li, Baikui; Tang, Zhikai; Chen, Kevin Jing Article
High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications
Solid-State Electronics, v. 91, 2014, p. 19-23
Zhou, Qi; Yang, Shu; Chen, Wanjun; Zhang, Bo; Feng, Zhihong; Cai, Shujun; Chen, Kevin J. Article
High-fMAX high Johnson's figure-of-merit 0.2-μ m gate algan/gan HEMTs on silicon substrate with AlN}/SiNx passivation
IEEE Electron Device Letters, v. 35, (3), 2014, article number 6710223, p. 315-317
Huang, Sen; Wei, Ke; Liu, Guoguo; Zheng, Yingkui; Wang, Xinhua; Pang, Lei; Kong, Xin; Liu, Xinyu; Tang, Zhikai; Yang, Shu; Jiang, Q.; Chen, Kevin Jing Article
Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs
IEEE Transactions on Electron Devices, v. 61, (8), August 2014, article number 6851170, p. 2785-2792
Tang, Zhikai; Huang, Sen; Tang, Xi; Li, Baikui; Chen, Kevin Jing Article
Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement
Applied Physics Letters, v. 104, (1), January 2014, article number 013504
Yang, Shu; Zhou, Chunhua; Jiang, Qimeng; Lu, Jianbiao; Huang, Baoling; Chen, Kevin Jing Article
Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors
Applied Physics Letters, v. 105, (22), December 2014, article number 223508
Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing Article
P-doping-free III-nitride high electron mobility light-emitting diodes and transistors
Applied Physics Letters, v. 105, (3), July 2014, article number 032105
Li, Baikui; Tang, Xi; Wang, Jiannong; Chen, Kevin Jing Article
Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform
IEEE Transactions on Electron Devices, v. 61, (11), November 2014, article number 6902778, p. 3808-3813
Jiang, Qimeng; Tang, Zhikai; Zhou, Chunhua; Yang, Shu; Chen, Kevin Jing Article
Technology for III-N heterogeneous mixed-signal electronics
Physica Status Solidi (A) Applications and Materials Science, v. 211, (4), 2014, p. 769-774
Chen, Kevin Jing; Kwan, Alex Man Ho; Jiang, Qimeng Article
A GaN pulse width modulation integrated circuit
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2014, 2014, article number 6856068, p. 430-433
Wang, Hanxing; Ho, Alex Man Kwan; Jiang, Qimeng; Chen, Kevin Jing Conference paper
Analytical Modeling for AlGaN/GaN HEMTs
11th International Workshop on Compact Modeling (IWCM 14), Suntec Singapore Convention and Exhibition Centre, 23 January 2014
Zhang, Aixi; Zhang, Lining; Tang, Zhikai; Cheng, Xiaoxu; Wang, Yan; Chen, Kevin Jing; Chan, Man Sun Conference paper
Characterizing Power Delivery Systems with On/Off-chip Voltage Regulators for Many-core Processors
Proceedings -Design, Automation and Test in Europe, DATE, April 2014, article number 6800261
Wang, Xuan; Xu, Jiang; Wang, Zhe; Chen, Kevin Jing; Wu, Xiaowen; Wang, Zhehui Conference paper
Dielectric/III-N interfaces with nitridation interfacial-layer for GaN power electronics
45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, USA, 10-13 December 2014
Chen, Kevin Jing; Yang, Shu; Tang, Zhikai; Huang, Sen Conference paper
High-temperature Low-damage Gate Recess Technique and Ozone-assisted ALD-grown Al₂O₃ Gate Dielectric for High-performance Normally-off GaN MIS-HEMTs
2014 IEEE International Electron Devices Meeting, v. 2015-February, (February), February 2015, article number 7047071, p. 17.4.1-17.4.4
Huang, Sen; Jiang, Qimeng; Wei, Ke; Liu, Guoguo; Zhang, Jinhan; Wang, Xinhua; Zheng, Yingkui; Sun, Bing; Zhao, Chaorong; Liu, Honggang; Jin, Zhi; Liu, Xinyu; Wang, Hongyue; Liu, Shenghou; Lu, Yunyou; Liu, Cheng; Yang, Shu; Tang, Zhikai; Zhang, Jincheng; Hao, Yue; Chen, Jing Conference paper
Interface Characterization of Normally-Off Al2O3/AlN/GaN MOS-Channel-HEMTs with an AlN Interfacial Layer
8th International Workshop on Nitride Semiconductors (IWN2014), Wroc?aw, Poland, 24-29 August 2014
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin Jing Conference paper
Investigation of gate degradation in Al2O3-AlGaN/GaN MIS-HEMTs using transparent gate electrode
8th International Workshop on Nitride Semiconductors (IWN 2014), Wroc?aw, Poland, 24-29 August 2014
Lu, Yunyou; Li, Baikui; Tang, Xi; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin Jing Conference paper
Nitridation Interfacial-layer Technology: Enabling Low Interface Trap Density and High Stability in III-nitride MIS-HEMTs
Proceedings - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), January 2014, article number 7021325
Yang, Shu; Chen, Kevin Jing Conference paper
Normally-off Hybrid Al₂O₃/GaN MOSFET on Silicon Substrate Based on Wet-etching
Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC's, Institute of Electrical and Electronics Engineers (IEEE), 2014, p. 253-256
Wang, M.; Wang, Y.; Zhang, C.; Wen, C.P.; Wang, J.; Hao, Y.; Wu, W.; Shen, B.; Chen, K.J. Conference paper
Performance Enhancement of Normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN Interfacial Layer
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2014, article number 6856051, p. 362-365
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin Jing Conference paper
Stability and Temperature Dependence of Dynamic RON in AlN-passivated AlGaN/GaN HEMT on Si Substrate
CS MANTECH 2014 - 2014 International Conference on Compound Semiconductor Manufacturing Technology 2014, GaAs Mantech, Incorporated, 2014, p. 97-100
Tang, Zhikai; Huang, Sen; Chen, Kevin Jing Conference paper
Surface Nitridation for Improved Dielectric/III?Nitride Interfaces in GaN MIS?HEMTs
Physica Status Solidi (A) Applications and Materials Science, v. 212, (5), May 2015, p. 1059-1065
Chen, Kevin J; Yang, Shu; Tang, Zhikai; Huang, Sen; Lu, Yunyou; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Li, Baikui Conference paper
Thermally Induced Threshold Voltage Instability of III-nitride MIS-HEMTs and MOSC-HEMTs: Underlying Mechanisms and Optimization Schemes
2014 IEEE International Electron Devices Meeting (IEDM 2014), Institute of Electrical and Electronics Engineers (IEEE), 2014, p. 17.2.1-17.2.4
Yang, Shu; Liu, Shenghou; Liu, Cheng; Tang, Zhikai; Lu, Yunyou; Chen, Kevin Jing Conference paper

2013 40

1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform
IEEE Electron Device Letters, v. 34, (3), 2013, article number 6410335, p. 357-359
Jiang, Qimeng; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing Article
5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing
Electronics Letters, v. 49, (3), January 2013, p. 221-222
Dong, Zhihua; Tan, Shuxin; Cai, Yong; Chen, Hongwei; Liu, Shenghou; Xu, Jicheng; Xue, Lu; Yu, Guohao; Wang, Yue; Zhao, Desheng; Hou, Keyu; Chen, Kevin J.; Zhang, Baoshun Article
600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
IEEE Electron Device Letters, v. 34, (11), 2013, article number 6601638, p. 1373-1375
Tang, Zhikai; Jiang, Qimeng; Lu, Yunyou; Huang, Sen; Yang, Shu; Tang, Xi; Chen, Kevin Jing Article
A dominant-negative mutation of HSF2 associated with idiopathic azoospermia
Human genetics, v. 132, (2), February 2013, p. 159-165
Mou, Lisha; Wang, Yadong; Li, Honggang; Huang, Yi; Jiang, Tao; Huang, Weiren; Li, Zesong; Chen, Jing; Xie, Jun; Liu, Yuchen; Jiang, Zhimao; Li, Xianxin; Ye, Jiongxian; Cai, Zhiming; Gui, Yaoting Article
A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs
IEEE Electron Device Letters, v. 34, (1), 2013, article number 6365744, p. 30-32
Kwan, Alex Man Ho; Chen, Kevin Jing Article
AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process
Japanese Journal of Applied Physics, v. 52, (4 PART 2), April 2013, article number 04CF06
Liu, Xinke; Zhan, Chunlei; Chan, Kwok Wai; Owen, Man Hon Samuel; Liu, Wei; Chi, Dong Zhi; Tan, Leng Seow; Chen, Kevin Jing; Yeo, Yee-Chia Article
AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
Semiconductor Science and Technology, v. 28, (7), July 2013, article number 074015
Chen, Kevin Jing; Huang, Sen Article
Characterization of VT-instability in enhancement-mode Al₂O₃-AlGaN/GaN MIS-HEMTs
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 10, (11), November 2013, p. 1397-1400
Lu, Yunyou; Yang, Shu; Jiang, Qimeng; Tang, Zhikai; Li, Baikui; Chen, Kevin Jing Article
Device Technology for GaN Mixed-Signal Integrated Circuits
Japanese Journal of Applied Physics, v. 52, (11S), November 2013, article number 11NH05
Chen, Kevin J.; Kwan, Alex Man Ho Article
Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
Journal of Applied Physics, v. 114, (14), October 2013, article number 144509
Huang, Sen; Wei, Ke; Tang, Zhikai; Yang, Shu; Liu, Cheng; Guo, Lei; Shen, Bo; Zhang, Jinhan; Kong, Xin; Liu, Guoguo; Zheng, Yingkui; Liu, Xinyu; Chen, Kevin Jing Article
Enhancement-Mode LaLuO3-AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation
Japanese Journal of Applied Physics, v. 52, (8 PART 2), August 2013, article number 08JN02
Yang, Shu; Huang, Sen; Schnee, Michael; Zhao, Qing-Tai; Schubert, Juergen; Chen, Kevin J. Article
Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, v. 60, (10), 2013, article number 6605590, p. 3040-3046
Yang, Shu; Huang, Sen; Schnee, Michael; Zhao, Qing-Tai; Schubert, Juergen; Chen, Kevin Jing Article
Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs
Journal of Semiconductors, v. 34, (2), February 2013, article number 024003
Chen, W.; Zhang, J.; Zhang, B.; Chen, K.J. Article
Genome-wide analysis of microRNAs expression profiling in patients with primary IgA nephropathy
Genome, v. 56, (3), March 2013, p. 161-169
Tan, Kuibi; Chen, Jing; Li, Wuxian; Chen, Yuyu; Sui, Weiguo; Zhang, Yang; Dai, Yong Article
High sensitivity AlGaN/GaN lateral fieldeffect rectifier for zero-bias microwave detection
Electronics Letters, v. 49, (22), October 2013, p. 1391-1393
Zhou, Qi; Chen, Wanjun; Zhou, Chunhua; Zhang, Bo; Chen, Kevin Jing Article
High-performance normally-Off Al2O3 GaN MOSFET using a wet etching-based gate recess technique
IEEE Electron Device Letters, v. 34, (11), 2013, article number 6601679, p. 1370-1372
Wang, Ye; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing; Shen, Bo Article
High-Quality Interface in Al2O3/GaN/GaNAlGaNGaN MIS Structures with in Situ Pre-Gate Plasma Nitridation
IEEE Electron Device Letters, v. 34, (12), 2013, article number 6656897, p. 1497-1499
Yang, Shu; Tang, Zhikai; Wong, King-Yuen; Lin, Yu-Syuan; Liu, Cheng; Lu, Yunyou; Huang, Sen; Chen, Kevin Jing Article
High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs With AlN/SiNx Passivation
IEEE Electron Device Letters, v. 34, (3), 2013, article number 6410341, p. 366-368
Tang, Zhikai; Huang, Sen; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing Article
Integrated Over-Temperature Protection Circuit for GaN Smart Power ICs
Japanese Journal of Applied Physics, v. 52, (8 PART 2), August 2013, article number 08JN15
Kwan, Alex Man Ho; Guan, Yue; Liu, Xiaosen; Chen, Kevin J. Article
Investigation of device geometry- and temperature-dependent characteristics of AlGaN/GaN lateral field-effect rectifier
Semiconductor Science and Technology, v. 28, (1), January 2013, article number 015021
Chen, Wanjun; Zhang, Jing; Wang, Zhigang; Wei, Jin; Zhang, Bo; Chen, Jing Article
Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges
IEEE Electron Device Letters, v. 34, (2), 2013, article number 6403499, p. 193-195
Huang, Sen; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin Jing Article
Overexpression of Cyclooxygenase-1 Correlates with Poor Prognosis in Renal Cell Carcinoma
Asian Pacific journal of cancer prevention, v. 14, (6), 2013, p. 3729-3724
Yu, Zu-Hu; Zhang, Qiang; Wang, Ya-Dong; Chen, Jing; Jiang, Zhi-Mao; Shi, Min; Guo, Xin; Qin, Jie; Cui, Guang-Hui; Cai, Zhi-Ming; Gui, Yao-Ting; Lai, Yong-Qing Article
Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
IEEE Electron Device Letters, v. 34, (9), 2013, article number 6556961, p. 1106-1108
Liu, Cheng; Liu, Shenghou; Huang, Sen; Chen, Kevin Jing Article
Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement
IEEE Transactions on Electron Devices, v. 60, (3), 2013, article number 6449310, p. 1075-1081
Zhou, Qi; Chen, Wanjun; Liu, Shenghou; Zhang, Bo; Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing Article
600 V High-performance AlGaN/GaN HEMTs with AlN/SiN_x Passivation
2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2013), Boston, USA, 23-26 April 2013
Tang, Zhikai; Huang, Sen; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing Conference paper
600V 1.3mμ·cm2 Low-leakage Low-current-collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2013, article number 6694478, p. 191-194
Tang, Zhikai; Huang, Edward Seng-jin; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing Conference paper
AlN/GaN Heterostructure TFTs with the Polarized AlN Barrier Grown by 300 ^oC Plasma Enhanced Atomic Layer Epitaxy
10th Topical Workshop on Heterostructure Microelectronics (TWHM-10), Hakodate, Japan, 2-5 September 2013
Liu, Cheng; Liu, Shenghou; Huang, Sen; Li, Baikui; Chen,Jing Kevin Conference paper
Degradation of Transient OFF-State Leakage Current in AlGaN/GaN HEMTs Induced by ON-State Gate Overdrive
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 928-931
Li, Baikui; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing Conference paper
Device technology for GaN mixed-signal integrated circuits
Japanese Journal of Applied Physics, v. 52, (11 PART 2), November 2013, article number 11NH05
Chen, Kevin Jing Conference paper
GaN Buffer Traps in GaN-on-Si Structure Studied by Thermally Stimulated Current and Back-gating Measurements
10th Int. Conf. on Nitride Semiconductors (ICNS-10), Washington DC, USA, 2013
Yang, Shu; Lu, Jianbiao; Huang, Sen; Zhou, Chunhua; Huang, Baoling; Chen, Kevin Jing Conference paper
GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 949-952
Yang, Shu; Jiang, Qimeng; Li, Baikui; Tang, Zhikai; Chen, Kevin Jing Conference paper
High Performance Normally-Off AlGaN/GaN MOSFET with Al2O3 High-k Dielectric Layer Using a Low Damage Recess Technique
10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, 25-30 August 2013
Wang, Ye; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing Conference paper
High voltage InAlN/GaN HFETs achieved by schottky-contact technology for power applications
ECS Transactions, v. 58, (4), 2013, p. 351-363
Zhou, Qi; Chen, Wanjun; Liu, Shenghou; Zhang, Bo; Feng, Zhihong; Cai, Shujun; Chen, Kevin J. Conference paper
High-Voltage Enhancement/Depletion-mode AlGaN/GaN HEMTs on Modified SOI Substrates
Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa, Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 407-410
Jiang, Qimeng; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing Conference paper
Improved High-Temperature Stability of 2DEG Channel in AlGaN/GaN Heterostructures by PEALD-grown AlN Thin Film Passivation
10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, 25-30 August 2013
Huang, Sen; Wei, Ke; Liu, Xinyu; Liu, Guoguo; Shen, Bo; Chen, Kevin Jing Conference paper
Mapping of Interface Traps in High-performance Al₂O ₃/AlGaN/GaN MIS-heterostructures Using Frequency- and Temperature-dependent C-V Techniques
Technical Digest - International Electron Devices Meeting, IEDM, 2013, article number 6724573, p. 6.3.1-6.3.4
Yang, Shu; Tang, Zhikai; Wong, King-Yuen; Lin, Yu-Syuan; Lu, Yunyou; Huang, Sen; Chen, Kevin Jing Conference paper
Monolithically Integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and Their Applications in Low-standby-power Start-up Circuit for Switched-mode Power Supplies
2013 IEEE International Electron Devices Meeting (IEDM 2013), Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 156-159
Tang, Zhikai; Jiang, Qimeng; Huang, Sen; Lu, Yunyou; Yang, Shu; Liu, Cheng; Tang, Xi; Liu, Shenghou; Li, Baikui; Chen, Kevin Jing Conference paper
Recent Development in Flourine-ion-implanted GaN-based Heterojunction Power Devices
1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings, 2013, article number 6695570, p. 92-95
Chen, Kevin Jing; Kwan, Man Ho; Tang, Zhikai Conference paper
Technology for III-N Heterogeneous Mixed-signal Electronics
10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, 25-30 August 2013
Chen, Kevin Jing Conference paper
Toward GaN-based Power Integrated Circuits
The 2nd International Conference on Advanced Electromaterials (ICAE 2013), Jeju, Korea, 12-15 November 2013
Chen, Kevin Jing Conference paper

2012 26

AlGaN/GaN MISHEMTs With High-kappa LaLuO3 Gate Dielectric
IEEE Electron Device Letters, v. 33, (7), July 2012, p. 979-981
Yang, Shu; Huang, Sen; Chen, Hongwei; Zhou, Chunhua; Zhou, Qi; Schnee, Michael; Zhao, Qing-Tai; Schubert, Juergen; Chen, Kevin Jing Article
AlGaN/GaN-on-Silicon Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800V and On-State Resistance of 3 m Omega.cm(2) Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process
Applied physics express, v. 5, (6), June 2012, article number 066501
Liu, Xinke; Zhan, Chunlei; Chan, Kwok Wai; Liu, Wei; Tan, Leng Seow; Chen, Kevin Jing; Yeo, Yee-Chia Article
Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layer
物理学报, v. 61, (24), 2012
Duan, Bao-Xing; Yang, Yin-Tang; Chen, Kevin J. Article
Characterization of V_th-instability in Al₂O₃/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement
Physica status solidi. C, Current topics in solid state physics, v. 9, (3-4), 2012, p. 923-926
Huang, Sen; Yang, Shu; Roberts, John; Chen, Kevin J. Article
Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film
IEEE Electron Device Letters, v. 33, (4), April 2012, p. 516-518
Huang, Sen; Jiang, Qimeng; Yang, Shu; Zhou, Chunhua; Chen, Kevin J. Article
Enhancement-mode operation of nanochannel array (NCA) AlGaN/GaN HEMTs
IEEE Electron Device Letters, v. 33, (3), 2012, p. 354-356
Liu, S.; Cai, Y.; Gu, G.; Wang, J.; Zeng, C.; Shi, W.; Feng, Z.; Qin, H.; Cheng, Z.; Chen, K.J.; Zhang, B. Article
Fe-doped InN layers grown by molecular beam epitaxy
Applied physics letters, v. 101, (17), October 2012
Wang, Xinqiang; Liu, Shitao; Ma, Dingyu; Zheng, Xiantong; Chen, Guang; Xu, Fujun; Tang, Ning; Shen, Bo; Zhang, Peng; Cao, Xingzhong; Wang, Baoyi; Huang, Sen; Chen, Kevin J.; Zhou, Shengqiang; Yoshikawa, Akihiko Article
F離子注入新型Al_0.25Ga_0.75N/GaN HEMT器件耐壓分析
物理学报=Acta Physica Sinica, v. 61, (22), 2012, p. 408-414
段寶興; 楊銀堂; 陳敬 Article
High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy
Applied physics express, v. 5, (1), 2012, article number 015502
Wang, X.; Liu, S.; Ma, N.; Feng, L.; Chen, G.; Xu, F.; Tang, N.; Huang, S.; Chen, K.J.; Zhou, S.; Shen, B. Article
Low Dynamic ON-Resistance in AlGaN/GaN-on-Si Power HEMTs Obtained by AlN Thin Film Passivation
ECS transactions, v. 50, (3), 2012, p. 343-351
Chen, Kevin Jing; Huang, Sen; Jiang, Qimeng Article
Schottky source/drain InAlN/AlN/GaN MISHEMT with enhanced breakdown voltage
IEEE Electron Device Letters, v. 33, (1), 2012, p. 38-40
Zhou, Q.; Chen, H.; Zhou, C.; Feng, Z.H.; Cai, S.J.; Chen, K.J. Article
Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance
Japanese Journal of Applied Physics, v. 51, no. 4S, April 2012, Article no. 04DF02
Zhou, Qi; Chen, Hongwei; Zhou, Chunhua; Feng, Zhihong; Cai, Shujun; Chen, Kevin J. Article
Thermally activated pop-in and indentation size effects in GaN films
Journal of physics. D, Applied physics, v. 45, (8), 2012, article number 085301
Lu, Junyong; Ren, Hang; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi Article
UV-illuminated dielectrophoresis by two-dimensional electron gas (2DEG) in AlGaN/GaN heterojunction
Physica status solidi. A, Applications and materials science, v. 209, (11), November 2012, p. 2223-2228
Fu, Junxue; Luo, Yuan; Yobas, Levent; Chen, Kevin J. Article
Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices
IEEE Electron Device Letters, v. 33, (8), August 2012, p. 1132-1134
Zhou, Chunhua; Jiang, Qimeng; Huang, Sen; Chen, Kevin Jing Article
AlD-grown ultrathin AlN film for passivation of AlGaN/GaN HEMTs
27th Int. Conf. on Compound Semiconductor Manufacturing Technology (CS MANTECH), Boston, Massachusetts, USA, Apr 23-26 2012
Huang, Sen; Jiang, Qimeng; Yang, Shu; Zhou, Chunhua; Chen, Kevin J. Conference paper
AlGaN/GaN Metal-2DEG Tunnel Junction FETs with Normally-off Operation, High On-State Current and Low Off-State Leakage
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012, p. 417-420
Chen, Kevin Jing; Yuan, Li; Chen, Hongwei Conference paper
AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process
Proceedings of technical papers, 2012
Liu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S.; Teo, K.L.; Chen, K.J.; Yeo, Y.C. Conference paper
AlGaN/GaN-on-Silicon MOS-HEMTs with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ.cm2 using a CMOS-Compatible Gold-Free Process
2012 Int. Symp. on VLSI Technology, Systems, and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr 23-25 2012
Liu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S.; Chen, Kevin J.; Yeo, Y.C. Conference paper
Enhancement-mode AlGaN/GaN MISHEMTs with fluorinated high-κ LaLuO3 gate dielectric
Int. Workshop on Nitride Semiconductors (IWN2012), Sapporo, Japan, 2012
Yang, Shu; Huang, Sen; Zhao, Qing-Tai; Chen, Kevin Jing Conference paper
Exploiting nanostructure-thin film interfaces in advanced sensor device configurations
Vacuum, v. 86, (6), 2012, p. 757-760
Jha, S.; Wang, H.E.; Kutsay, O.; Jelenkovi?, E.V.; Chen, K.J.; Bello, I.; Kremnican, V.; Zapien, J.A. Conference paper
Fluorine Plasma Ion Implantation: a GaN Normally-off HEMT Technology
4th Int. Symp. On Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma2012), Aichi, Japan, Mar 4-8 2012
Chen, Kevin J. Conference paper
Integrated Gate-protected HEMTs and Mixed-Signal Functional Blocks for GaN Smart Power ICs
2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), San Francisco, USA, December 10-12 2012
Kwan, Alex Man Ho; Liu, Xiaosen; Chen, Kevin J. Conference paper
Mechanism of PEALD-grown AlN passivation of AlGaN/GaN HEMTs
Int. Workshop on Nitride Semiconductors (IWN2012), Sapporo, Japan, 2012
Huang, Sen; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin Jing Conference paper
Normally-off AlGaN/GaN power tunnel-junction FETs
Physica status solidi. C, Current topics in solid state physics, v. 9, 2012, p. 871-874
Chen, Hongwei; Yuan, Li; Zhou, Qi; Zhou, Chunhua; Chen, Kevin J. Conference paper
Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Structures
24th International Symposium on Power Semiconductor Devices and ICs, Bruges, Belgium, 2012, p. 245-248
Zhou, Chunhua; Jiang, Qimeng; Huang, Sen; Chen, Kevin Jing Conference paper

2011 28

A compact dual-band coupled-line balun with tapped open-ended stubs
Progress in electromagnetics research C. Pier C, v. 22, 2011, p. 109-122
Shao, J.; Zhang, H.; Chen, C.; Tan, S.; Chen, K.J. Article
Characterization of High-κ LaLuO₃ Thin Film Grown on AlGaN/GaN Heterostructure by Molecular Beam Deposition
Applied physics letters, v. 99, (18), October 2011, article number 182103
Yang, Shu; Huang, Sen; Chen, Hongwei; Schnee, Michael; Zhao, Qing-Tai; Schubert, Jurgen; Chen, Kevin Jing Article
Efficient Parameter Extraction of Microwave Coupled-Resonator Filter Using Genetic Algorithms
International journal of RF and microwave computer-aided engineering, v. 21, (2), March 2011, p. 137-144
Zhang, Hualiang; Bowman, Samuel; Chen, Kevin J. Article
Enhanced Electroluminescence from the Fluorine-plasma Implanted Ni/Au-AlGaN/GaN Schottky Diode
Applied Physics Letters, v. 99, (6), August 2011, article number 062101
Li, Baikui; Wang, Maojun; Chen, Kevinjing; Wang, Jiannong Article
Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology
Physica status solidi. A, Applications and materials science, v. 208, (2), February 2011, p. 434-438
Chen, Kevin J.; Zhou, Chunhua Article
Enhancement-Mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation with a Si(3)N(4) Energy-Absorbing Layer
Electrochemical and solid-state letters, v. 14, (6), 2011, p. H229-H231
Chen, Hongwei; Wang, Maojun; Chen, Kevin J. Article
Fabrication of GaN-based MEMS structures using dry-etch technique
纳米技术与精密工程=Nanotechnology and Precision Engineering, 9, 1, 2011
楊振川; 呂佳楠; 閆桂珍; 陳敬 Article
GaN Single-Polarity Power Supply Bootstrapped Comparator for High-Temperature Electronics
IEEE electron device letters, v. 32, (1), January 2011, p. 27-29
Liu, Xiaosen; Chen, Kevin J. Article
Gate-Induced Schottky Barrier Lowering Effect in AlGaN/GaN Metal-2DEG Tunnel Junction Field Effect Transistor
IEEE electron device letters, v. 32, (9), September 2011, p. 1221-1223
Yuan, Li; Chen, Hongwei; Zhou, Qi; Zhou, Chunhua; Chen, Kevin J. Article
High-Gain and High-Bandwidth AlGaN/GaN High Electron Mobility Transistor Comparator with High-Temperature Operation
Japanese Journal of Applied Physics, v. 50, pt. 2, no. 4, April 2011, Article no. 04DF02
Kwan, Alex Man Ho; Wong, King Yuen; Liu, Xiaosen; Chen, Kevin J. Article
Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices, v. 58, (2), February 2011, article number 5658134, p. 460-465
Wang, Maojun; Chen, Jing Article
Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping
IEEE electron device letters, v. 32, (4), April 2011, p. 482-484
Wang, Maojun; Chen, Kevin J. Article
Microspheres manipulation system by patterned AlGaN/GaN 2DEG electrodes
Physica status solidi. C, Current topics in solid state physics, v. 8, (7-8), 2011, p. 2479-2482
Fu, J.; Chen, K.J. Article
Normally Off AlGaN/GaN Metal-2DEG Tunnel-Junction Field-Effect Transistors
IEEE electron device letters, v. 32, (3), March 2011, p. 303-305
Yuan, Li; Chen, Hongwei; Chen, Kevin J. Article
ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors
Journal of applied physics, v. 110, (11), December 2011
Ma, Chenyue; Chen, Hongwei; Zhou, Chunhua; Huang, Sen; Yuan, Li; Roberts, John; Chen, Kevin J. Article
Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
AIP Advances, v. 1, (3), 2011, article number 032132
Lu, Junyong; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi Article
Surface properties of AlxGa1-xN/GaN heterostructures treated by fluorine plasma: An XPS study
Physica status solidi. C, Current topics in solid state physics, v. 8, (7-8), 2011, p. 2200-2203
Huang, S.; Chen, H.; Chen, K.J. Article
Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors
Japanese Journal of Applied Physics, v. 50, no. 11R, 2011, Article no. 110202
Huang, Sen; Yang, Shu; Roberts, John; Chen, Kevin J. Article
A Novel Normally-off GaN Power Tunnel Junction FET
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, 2011, p. 276-279
Yuan, Li; Chen, Hongwei; Zhou, Qi; Zhou, Chunhua; Chen, Kevin J. Conference paper
Characterization of AlGaN/GaN cantilevers fabricated with deep-release techniques
Key engineering materials, v. 483, 2011, p. 14-17
Lv, J.; Yang, Z.; Yan, G.; Cai, Y.; Zhang, B.; Chen, K.J. Conference paper
Characterization of GaN cantilevers fabricated with GaN-on-silicon platform
Proceedings, IEEE micro electro mechanical systems, 2011, p. 388-391
Lv, J.N.; Yang, Z.C.; Yan, G.Z.; Cai, Y.; Zhang, B.S.; Chen, K.J. Conference paper
Design of dual-band coupled-line balun
Final Program and Book of Abstracts - iWAT 2011: 2011 IEEE International Workshop on Antenna Technology: Small Antennas, Novel Structures and Innovative Metamaterials, 2011, p. 332-335
Zhang, H.; Shao, J.; Tan, S.; Chen, K.J. Conference paper
Electroluminescence from the fluorine-plasma treated Ni/Au-AlGaN/GaN Schottky diode
AIP Conference Proceedings, v. 1399, (113), December 2011, p. 113-114
Li, Baikui; Wang, Maojun; Chen, Jing; Wang, Jiannong Conference paper
Observation of Trap-Assisted Steep Sub-threshold Swing in Schottky Source/Drain Al2O3/InAlN/GaN MISHEMT
69th Device Research Conference (DRC), Santa Barbara, CA, USA, June 20-22, 2011
Zhou, Qi; Chen, Hongwei; Zhou, Chunhua; Feng, Zhihong; Cai, S.J.; Chen, Kevin J. Conference paper
Physics of Fluorine Plasma Ion Implantation for GaN Normally-off HEMT Technology
IEEE International Electron Devices Meeting (IEDM), Washington, DC, December 5-7 2011
Chen, Kevinjing; Yuan, Li; Wang, Maojun; Chen, Hongwei; Huang, Sen; Zhou, Qi; Zhou, Chunhua; Li, Baikui; Wang, Jiannong Conference paper
Schottky Source/Drain Al2O3/InAlN/GaN MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF Current Ratio
2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), Washington, DC, December 5-7 2011
Zhou, Qi; Huang, Sen; Chen, Hongwei; Zhou, Chunhua; Feng, Zhihong; Cai, Shujun; Chen, Kevin J. Conference paper
Stealth Electrode Dielectrophoresis: Microspheres Manipulation by Patterned 2-Dimensional Electron Gas (2DEG) in AlGaN/GaN Heterostructures
ISMM 2011 in Conjunction with the KBCS Spring Meeting, Seoul, Korea, from June 2 to 4, 2011. Abstract: F3-056
Fu, Junxue; Yobas, Levent; Chen, Kevin J. Conference paper
The role of fluorine ions in GaN heterojunction transistors: Applications and stability
Proceedings of SPIE--the international society for optical engineering, v. 7939, 2011
Chen, K.J. Conference paper

2010 26

18-GHz 3.65-W/mm enhancement-mode AlGaN/GaN HFET using fluorine plasma ion implantation
IEEE Electron Device Letters, v. 31, (12), 2010, p. 1386-1388
Feng, Z.H.; Zhou, R.; Xie, S.Y.; Yin, J.Y.; Fang, J.X.; Liu, B.; Zhou, W.; Chen, K.J.; Cai, S.J. Article
AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough Breakdown Immunity and Low On-Resistance
IEEE electron device letters, v. 31, (1), 2010, JAN, p. 5-7
Zhou, Chunhua; Chen, Wanjun; Piner, Edwin L.; Chen, Kevin J. Article
AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability
Electronics letters, v. 46, (6), 2010, MAR 18, p. 445-U92
Zhou, C.; Chen, W.; Piner, E.L.; Chen, K.J. Article
Characterization and analysis of the temperature-dependent on -resistance in AlGaN/GaN lateral field-effect rectifiers
IEEE Transactions on Electron Devices, v. 57, (8), 2010, p. 1924-1929
Wong, K.Y.; Chen, W.; Chen, K.J. Article
Determining phonon deformation potentials of hexagonal GaN with stress modulation
Journal of Applied Physics, v. 108, (12), 2010, article number 123520
Lu, Junyong; Wang, ZhiJia; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi Article
Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlxGa1-xN/GaN heterostructures
Applied physics letters, v. 96, (23), 2010, JUN 7
Huang, Sen; Chen, Hongwei; Chen, Kevin J. Article
GaN smart power IC technology
PHYSICA STATUS SOLIDI b-basic SOLID STATE PHYSICS, v. 247, (7), 2010, JUL, p. 1732-1734
Wong, King-Yuen; Chen, Wanjun; Liu, Xiaosen; Zhou, Chunhua; Chen, Kevin J. Article
High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance
Electronics letters, v. 46, (24), November 2010, p. 1626-1627
Chen, W.; Zhou, C.; Chen, K.J. Article
Integrated Nanorods and Heterostructure Field Effect Transistors for Gas Sensing
Journal OF PHYSICAL CHEMISTRY C, v. 114, (17), 2010, MAY 6, p. 7999-8004
Jha, Shrawan K.; Liu, Chao Ping; Chen, Zhen Hua; Chen, Kevin J.; Bello, Igor; Zapien, Juan A.; Zhang, Wenjun; Lee, Shuit-Tong Article
Integrated Voltage Reference Generator for GaN Smart Power Chip Technology
IEEE transactions on electron devices, v. 57, (4), 2010, APR, p. 952-955
Wong, King-Yuen; Chen, Wanjun; Chen, Kevin J. Article
Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 207, (6), 2010, JUN, p. 1332-1334
Wang, Maojun; Cheng, Chung Choi; Beling, Chris D.; Fung, Stevenson; Chen, Kevin J. Article
Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage
Electronics letters, v. 46, (18), 2010, SEP 2, p. 1280-U63
Chang, C.T.; Hsu, T.H.; Chang, E.Y.; Chen, Y.C.; Trinh, H.D.; Chen, K.J. Article
Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique
IEEE transactions on electron devices, v. 57, (7), 2010, JUL, p. 1492-1496
Wang, Maojun; Chen, Kevin J. Article
Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability
IEEE electron device letters, v. 31, (7), 2010, JUL, p. 668-670
Zhou, Chunhua; Chen, W.; Piner, Edwin L.; Chen, Kevin J. Article
Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode
IEEE microwave and wireless components letters, v. 20, (5), 2010, MAY, p. 277-279
Zhou, Qi; Wong, King-Yuen; Chen, Wanjun; Chen, Kevin J. Article
AlGaN/GaN dual-channel lateral field-effect rectifier with punchthrough breakdown immunity and low on-resistance
2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010, 2010
Zhou, Chunhua; Chen, Wanjun; Piner, Edwin L.; Chen, Kevin J. Conference paper
Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: Evidence of Fermi level de-pinning at Ni/AlGaN interface
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 7, (7-8), July 2010, p. 1961-1963
Li, Baikui; Wang, Maojun; Chen, Jing; Wang, Jiannong Conference paper
Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT Technology
The 37th Int. Symp. On Compound Semiconductors (ISCS2010), Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4, 2010
Chen, Kevin J. Conference paper
Enhancement-mode AlGaN/GaN HEMTs fabricated by standard fluorine ion implantation
2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010, 2010
Chen, Hongwei; Wang, Maojun; Chen, Kevin J. Conference paper
GaN smart discrete power devices
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2010, p. 1303-1306
Chen, K.J.; Zhou, C. Conference paper
GaN Smart Power IC Technologies
IEEE University Government Industry Micro/Nano Symposium (UGIM 2010), Purdue University, West Lafayette, IN, USA, June 28-July 1, 2010
Chen, Kevin J. Conference paper
Reliability of Enhancement-mode AlGaN/GaN HEMTs Under ON-State Gate Overdrive
2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, 2010
Ma, Chenyue; Chen, Hongwei; Zhou, Chunhua; Huang, Sen; Yuan, Li; Roberts, John; Chen, Kevin J. Conference paper
Residual stress characterization of GaN microstructures using bent-beam strain sensors
2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, 2010, p. 138-140
Lv, J.; Yang, Z.; Yan, G.; Cai, Y.; Zhang, B.; Chen, K.J. Conference paper
Self-aligned enhancement-mode AIGaN/GaN HEMTs using 25 ke V fluorine ion implantation
Device Research Conference - Conference Digest, DRC, 2010, p. 137-138
Chen, H.; Wang, M.; Chen, K.J. Conference paper
Self-protected GaN power devices with reverse drain blocking and forward current limiting capabilities
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2010, p. 343-346
Zhou, C.; Chen, W.; Piner, E.L.; Chen, K.J. Conference paper
Single-Polarity Power Supply Bootstrapped Comparator for GaN Smart Power Technology
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium, 2010
Liu, Xiaosen; Chen, Kevin J. Conference paper

2009 16

Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy
Applied physics letters, v. 94, (6), 2009, FEB 9
Wang, M.J.; Yuan, L.; Cheng, C.C.; Beling, C.D.; Chen, K.J. Article
Design of dual-band rat-race couplers
IET Microwaves Antennas & Propagation, v. 3, (3), 2009, APR, p. 514-521
Zhang, H.; Chen, K.J. Article
Diffusion mechanism and the thermal stability of fluorine ions in GaN after ion implantation
Journal of applied physics, v. 105, (8), 2009, APR 15
Wang, M.J.; Yuan, L.; Chen, K.J.; Xu, F.J.; Shen, B. Article
Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform
IEEE electron device letters, v. 30, (10), 2009, OCT, p. 1045-1047
Lv, Jianan; Yang, Zhenchuan; Yan, Guizhen; Lin, Wenkui; Cai, Yong; Zhang, Baoshun; Chen, Kevin J. Article
Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode
Applied physics letters, v. 95, (23), 2009, DEC 7, article number 232111
Li, Baikui; Wang, Maojun; Chen, Kevinjing; Wang, Jiannong Article
Microbridge tests on gallium nitride thin films
Journal of micromechanics and microengineering, v. 19, (9), September 2009, article number 095019
Huang, Haiyou; Li, ZhiYing; Lu, Junyong; Wang, Zhi-Jia; Wang, Chong-Shun; Lau, Kei May; Chen, Kevin Jing; Zhang, Tongyi Article
Silicon-on-Organic Integration of a 2.4-GHz VCO Using High-Q Copper Inductors and Solder-Bumped Flip Chip Technology
IEEE transactions on components and packaging technologies, v. 32, (1), 2009, MAR, p. 191-196
Huo, Xiao; Xiao, Guo-Wei; Chan, Philip C.H.; Chen, Kevin J. Article
Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT
IEEE electron device letters, v. 30, (5), 2009, MAY, p. 430-432
Chen, Wanjun; Wong, King-Yuen; Chen, Kevin J. Article
Study of diffusion and thermal stability of fluorine ions in GaN by Time-of-Flight Secondary Ion Mass Spectroscopy
Physica status solidi. C, Current topics in solid state physics, v. 6, (SUPPL. 2), 2009, p. S952-S955
Wang, M.; Yuan, L.; Xu, F.; Shen, B.; Chen, K.J. Article
Temperature dependence and thermal stability of planar-integrated enhancement/depletion-mode AlGan/GaN HEMTs and digital circuits
Solid-state electronics, v. 53, (1), 2009, JAN, p. 1-6
Wang, Ruonan; Cai, Yong; Chen, Kevin J. Article
Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications
IEEE transactions on electron devices, v. 56, (12), 2009, DEC, p. 2888-2894
Wong, King-Yuen; Chen, Wanjun; Zhou, Qi; Chen, Kevin J. Article
GaN smart power chip technology
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009, 2009, p. 403-407
Chen, K.J. Conference paper
HEMT-compatible lateral field-effect rectifier using CF(4) plasma treatment
Physica status solidi C, Current topics in solid state physics, v. 6, (SUPPL. 2), 2009, p. S948-S951
Chen, Wanjun; Wong, King Yuen; Chen, Kevin J. Conference paper
High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode
2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009, 2009
Zhou, Q.; Wong, K.Y.; Chen, W.; Chen, K.J. Conference paper
Integrated voltage reference and comparator circuits for GaN smart power chip technology
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2009, p. 57-60
Wong, K.Y.; Chen, W.; Chen, K.J. Conference paper
Wide bandgap GaN smart power chip technology
2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009, 2009
Wong, King Yuen; Chen, Wanjun; Chen, Kelvin J. Conference paper

2008 22

A second-order dual-band bandpass filter using a dual-band admittance inverter
Microwave and optical technology letters, v. 50, (5), 2008, MAY, p. 1184-1187
Zhang, Hualiang; Chen, Kevin J. Article
Compact broadband dual-band bandpass filters using slotted ground structures
Progress in Electromagnetics research-pier, v. 82, 2008, p. 151-166
Wang, X.H.; Wang, B.Z.; Chen, K.J. Article
Flip-chip integrated oscillator with reduced phase noise and enhanced output power by using DGS
红外与毫米波学报=Journal of Infrared and Millimeter Waves, v. 2008, (06), 2008, p. 401-404
程知群; 李進; 毛祥根; 譚松; 陳敬 Article
Fluorine plasma ion implantation in AlGaN/GaN heterostructures: A molecular dynamics simulation study
Applied physics letters, v. 92, (10), 2008, MAR 10
Yuan, L.; Wang, M.J.; Chen, K.J. Article
Gain improvement of enhancement-mode AlGaN/GaN high-electron-mobility transistors using dual-gate architecture
Japanese Journal of Applied Physics, v. 47, pt. 2, no. 4S, Apr 2008, p. 2820-2823
Wang, Ruonan; Wu, Yichao; Chen, Kevin J. Article
High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors
Applied physics letters, v. 92, (25), 2008, JUN 23
Chen, Wanjun; Wong, King-Yuen; Huang, Wei; Chen, Kevin J. Article
Low-frequency noise properties of double channel AlGaN/GaN HEMTs
Solid-state electronics, v. 52, (5), 2008, MAY, p. 606-611
Jha, Shrawan Kumar; Surya, Charles C.; Chen, Kevin Jing; Lau, Kei May; Jelencovie, E. Article
Molecular dynamics calculation of the fluorine ions' potential energies in AlGaN/GaN heterostructures
Journal of applied physics, v. 104, (11), 2008, DEC 1
Yuan, L.; Wang, M.J.; Chen, K.J. Article
Persistent photoconductivity and carrier transport in AlGaN/GaN heterostructures treated by fluorine plasma
Applied physics letters, v. 92, (8), 2008, FEB 25, article number 082105
Li, Baikui; Ge, Weikun; Wang, Jiannong; Chen, Kevinjing Article
The effect of physical design parameters on the RF and microwave performance of the BST thin film planar interdigitated varactors
Sensors and Actuators a-physical, v. 141, (2), 2008, FEB 15, p. 231-237
Zhang, J.; Zhang, H.; Lu, S.G.; Xu, Z.; Chen, K.J. Article
一种采用新型复合沟道GaN HEMTs低噪声分布式放大器
半导体学报=Chinese Journal of Semiconductors, v. 2008, 12, 2008, p. 2297-2300
程知群; 周肖鵬; 陳敬 Article
Atomistic Modeling of Fluorine Implantation and Diffusion in III-Nitride Semiconductors
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, p. 543-546
Yuan, Li; Wang, Maojun; Chen, Kevin J. Conference paper
Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 5, (6), 2008, p. 1892-1894
Li, Baikui; Chen, Jing; Lau, Kei May; Ge, Weikun; Wang, Jiannong Conference paper
Distributed amplifier using enhancement-mode AlGaN/GaN HEMTs
2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008, 2008, p. 94-96
Cheng, Z.; Zhou, X.; Chen, K.J. Conference paper
Fabrication of suspending gan microstructures with combinations of anisotropic and isotropic dry etching techniques
2008 Proceedings of the ASME - 2nd International Conference on Integration and Commercialization of Micro and Nanosystems, MicroNano 2008, 2008, p. 573-577
Lv, J.; Yang, Z.; Chen, K.J. Conference paper
Fluorine Plasma Ion Implantation Technology: a New Dimension in GaN Device Processing
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, 2008, p. 1074-1077
Chen, K.J. Conference paper
High Temperature Operation of Normally-off AlGaN/GaN Power HEMTs Using CF4 Plasma Treatment
9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Beijing (China), 20-23 Oct 2008
Chen, Wanjun; Wong, King Yuen; Huang, Wei; Chen, Kevin J. Conference paper
High-performance AlGaN/GaN HEMT-compatible lateral field-effect rectifiers
66th DRC Device Research Conference Digest, Santa Barbara, CA, United States, 23-25 June 2008, 2008, p. 287-288
Chen, Wanjun; Huang, Wei; Wong, King Yuen; Chen, Kevin Jing Conference paper
Molecular Dynamics Simulation Study on Fluorine Plasma Ion Implantation in AlGaN/GaN Heterostructures
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, p. 1090-1093
Yuan, Li; Wang, Maojun; Chen, Kevin J. Conference paper
Monolithic Integration of Lateral Field-Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, p. 1-4
Chen, Wanjun; Wong, King-Yuen; Chen, Kevin J. Conference paper
Source injection induced off-State breakdown and its improvement by enhanced back barrier with fluorine ion implantation in AlGaN/GaN HEMTs
IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, USA, 15-17 December 2008, P.1-4
Wang, Maojun; Chen, Kevin J. Conference paper
Temperature Dependence of AlGaN/GaN HEMT-Compatible Lateral Field Effect Rectifier
EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, 2008, p. 96-99
Wong, King-Yuen; Chen, Wanjun; Huang, Wei; Chen, Kevin J. Conference paper

2007 24

1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTs
Microwave and optical technology letters, v. 49, (6), 2007, JUN, p. 1360-1362
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yu Gang; Lau, Kei May; Chen, Kevin Jing Article
A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel Al0.3_Ga0.7_N/Al0.05_Ga0.95_{N/GaN HEMTs}
红外与毫米波学报=Journal of Infrared and Millimeter Waves, v. 2007, (04), 2007, p. 241-245
程知群; 蔡勇; 劉杰; 周玉剛; 劉稚美; 陳敬 Article
A stub tapped branch-line coupler for dual-band operations
IEEE microwave and wireless components letters, v. 17, (2), 2007, FEB, p. 106-108
Zhang, Hualiang; Chen, Kevin J. Article
A tunable bandstop resonator based on a compact slotted ground structure
IEEE transactions on microwave theory and techniques, v. 55, (9), 2007, SEP, p. 1912-1918
Wang, Xiao-Hua; Wang, Bing-Zhong; Zhang, Hualiang; Chen, Kevin J. Article
DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
IEEE transactions on electron devices, v. 54, (1), January 2007
Liu, Jie; Zhou, Yugang; Zhu, Jia; Cai, Yong; Lau, Kei May; Chen, Kevin Jing Article
Device isolation by plasma treatment for planar integration of enhancement/depletion-mode AlGaN/GaN high electron mobility transistors
Japanese Journal of Applied Physics, v. 46, pt. 1, no. 4B, 24 Apr 2007, p. 2330-2333
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits
IEEE electron device letters, v. 28, (5), 2007, MAY, p. 328-331
Cai, Yong; Cheng, Zhiqun; Yang, Zhenchuan; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Integration of enhancement and depletion-mode AlGaN/GaN MIS-HFETs by fluoride-based plasma treatment
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 204, (6), 2007, JUN, p. 2023-2027
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
Chinese Physics, v. 16, (11), 2007, NOV, p. 3494-3497
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yu Gang; Lau, Kei May; Chen, Kevin Jing Article
Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse
IEEE electron device letters, v. 28, (3), 2007, MAR, p. 189-191
Song, Di; Liu, Jie; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Novel composite-channel Al_0.3Ga_0.7N/ Al_0.05Ga_0.95N/GaN HEMT MMIC VCO with low phase noise
JOURNAL OF INFRARED AND MILLIMETER WAVES, v. 26, (4), 2007, AUG, p. 241-245
Zhi-Qun, Cheng; Yong, Cai; Jie, Liu; Yu-Gang, Zhou; Zhi-Mei, Liu; Jing, Chen Article
Surface acoustic wave device on AlGaN/GaN heterostructure using two-dimensional electron gas interdigital transducers
Applied physics letters, v. 90, (21), 2007, MAY 21, Article number 213506
Wong, King Yuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
A microstrip bandpass filter with an electronically reconfigurable transmission zero
Proceedings of the 36th European Microwave Conference, EuMC 2006, 2007, p. 653-656
Zhang, H.; Chen, K.J. Conference paper
Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment
Proceedings of International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007, 2007, p. 313-315
Li, Haiou; Tang, Chak Wah; Chen, Kevin Jing; Lau, Kei May Conference paper
Fabrication of position-controllable GaN nanostructures
Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, 2007, p. 985-988
Yang, Zhen Chuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevinjing Conference paper
Fabrication of Vertical Position-controllable GaN Nanowires on (111) Si Substrate
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 813-816
Wang, Congshun; Yang, Zhenchuan; Zhang, Baoshun; Wang, Yong; Wang, Hui; Lau, Kei May; Chen, Kevin Jing Conference paper
Low noise distributed amplifier using composite-channel Al _0.3Ga0.7N/Al_0.05Ga_0.95N/GaN HEMTs
IET Conference Publications, (529 CP), 2007, p. 513-519
Cheng, Zhiqun; Wu, Yichao; Sun, Lingling; Lau, Kei May; Chen, Kevin Jing Conference paper
Microwave noise characterization of enhancement-mode AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
65th DRC Device Research Conference, 2007, p. 77-78
Liu, Jie; Song, Di; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevinjing Conference paper
Microwave performance dependence of BST thin film planar interdigitated varactors on different substrates
Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, 2007, p. 678-682
Zhang, J.; Zhang, H.; Chen, K.J.; Lu, S.G.; Xu, Z. Conference paper
Planar two-dimensional electron gas (2DEG) IDT SAW filter on AlGaN/GaN heterostructure
IEEE MTT-S International Microwave Symposium Digest, 2007, p. 2043-2046
Wong, Kingyuen; Tang, Wilson; Lau, Kei May; Chen, Kevin Jing Conference paper
Quantum, power, and compound semiconductors - Reliability and characterization of power HEMTs
Technical Digest - International Electron Devices Meeting, IEDM, 2007, p. 379
Kizilyalli, I.C.; Chen, K.J. Conference paper
Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment
Technical Digest - International Electron Devices Meeting, IEDM, 2007, p. 389-392
Yi, Congwen; Wang, Ruonan; Huang, Wei; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabrication of suspended GaN microstructures
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p. 670-672
Yang, Zhen Chuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Conference paper
Two-dimensional Electron Gas (2DEG) IDT SAW Devices on AlGaN/GaN Heterostructure
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 1045-1048
Wong, Kingyuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper

2006 28

A physical model for on-chip spiral inductors with accurate substrate modeling
IEEE Transactions on Electron Devices, v. 53, (12), 2006, p. 2942-2948
Huo, X.; Chan, P.C.H.; Chen, K.J.; Luong, H.C. Article
AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
IEEE electron device letters, v. 27, (1), 2006, JAN, p. 10-12
Liu, Jie; Zhou, Yu Gang; Zhang, Jizhi; Lau, Kei May; Chen, Kevin Jing Article
Bandpass filters with reconfigurable transmission zeros using varactor-tuned tapped stubs
IEEE microwave and wireless components letters, v. 16, (5), 2006, MAY, p. 249-251
Zhang, HL; Chen, KJ Article
CAD equivalent-circuit modeling of attenuation and cross-coupling for edge-suspended coplanar waveguides on lossy silicon substrate
IEEE transactions on microwave theory and techniques, v. 54, (5), 2006, MAY, p. 2249-2255
Leung, LLW; Chen, KJ Article
Characterization and Attenuation Mechanisms of CMOS Compatible Micromachined Edge-suspended Coplanar Waveguides on Low-resistivity Silicon Substrate
IEEE Trans. Advanced Packaging,, vol. 29, No. 3, pp. 496-503, Aug. 2006.
Leung, Lydia L.W.; Zhang, J.W.; Hon, W.C.; Chen, Kevin J. Article
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
IEEE transactions on electron devices, v. 53, (9), 2006, SEP, p. 2207-2215
Cai, Yong; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing Article
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
IEEE transactions on electron devices, v. 53, (6), 2006, JUN, p. 1474-1477
Jia, Shuo; Cai, Yong; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Article
Enhancement-mode AlGaN/GaN HEMTs with low on-resistance and low knee-voltage
IEICE transactions on electronics, v. E89C, (7), 2006, JUL, p. 1025-1030
Cai, Yong; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing Article
Enhancement-mode Si3N4/AlGaN/GaN MISHFETs
IEEE electron device letters, v. 27, (10), 2006, OCT, p. 793-795
Wang, Ruonan; Cai, Yong; Tang, Chi-Wai; Lau, Kei May; Chen, Kevin Jing Article
Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 203, (7), 2006, MAY, p. 1712-1715
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Article
GaN-on-pattemed-silicon (GPS) technique for fabrication of GaN-based MEMS
Sensors and Actuators a-physical, v. 130, (Sp. Iss. SI), 2006, AUG 14, p. 371-378
Yang, Zhenchuan; Wang, Ruonan; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin J. Article
Isoelectronic indium-surfactant-doped Al0.3Ga0.7N/GaN high electron mobility transistors
Applied physics letters, v. 88, (12), 2006, MAR 20
Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing; Lau, Kei May Article
Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique
Applied physics letters, v. 88, (4), 2006, JAN 23, article number 041913
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Article
Miniaturized coplanar waveguide bandpass filters using multisection stepped-impedance resonators
IEEE transactions on microwave theory and techniques, v. 54, (3), 2006, MAR, p. 1090-1095
Zhang, HL; Chen, KJ Article
Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment
IEEE transactions on electron devices, v. 53, (9), 2006, SEP, p. 2223-2230
Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE electron device letters, v. 27, (8), 2006, AUG, p. 633-635
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
A planar integration process for E/D-mode AlGaN/GaN HEMT DCFL integrated circuits
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, Article number 4110036, p. 261-264
Wang, Ruonan; Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch
Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2312-2316
Liu, Jie; Zhou, Yugang; Zhu, Jia; Lau, Kei May; Chen, Kevin Jing Conference paper
Analysis of SAW filter fabricated on anisotropic substrate using finite-difference time-domain method
Proceedings - IEEE Ultrasonics Symposium, v. 1, 2006, p. 96-99
Wong, K.Y.; Tam, W.Y.; Chen, K.J. Conference paper
Compact on-chip three-dimensional electromagnetic bandgap structure
IEEE MTT-S International Microwave Symposium Digest, 2006, p. 594-597
Leung, L.L.W.; Chen, K.J. Conference paper
Core Technologies for III-Nitride Integrated Microsensors
6th Emerging Information Technology Conference, Richardson, Texas, USA, Aug 10-13, 2006
Chen, Kevin Jing; Lau, Kei May Conference paper
Enhancement-Mode A1GaN/GaN Metal Insulator Semiconductor HFETs Using Fluoride-Based Plasma Treatment Technique
Int. Workshop on Nitride Semiconductors, Kyoto, Japan, Oct 22-27, 2006
Wang, Ruonan; Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2368-2372
Jia, Shuo; Cai, Yong; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Conference paper
GaN MENS by MOCVD Growth of GaN on Patterned Si Substrates and Wet Etching
21th Meeting of the Electrochemical Society, Chicago, Illinois, May 6-10, 2007
Yang, Zhenchuan; Zhang, Baoshun; Chen, Kevin Jing; Lau, Kei May Conference paper
GaN-based Direct-Coupled FET Logic (DCFL) Digital Circuits Operating at 375 oC
2006 Int. Conf. on Solid State Devices and Materials, Yokahama, Japan, Sept 12-15, 2006
Cai, Y.; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor
Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC 2006), 2006, article number 4099867, p. 105-108
Jha, S.K.; Surya, C.; Chen. K.J.; Lau, K.M. Conference paper
Normally-off AlGaN/GaN low-density-drain HEMTs (LDD-HEMT) with enhanced breakdown voltage and suppressed current collapse
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, 2007, p. 257-260
Song, Di; Liu, Jie; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
Planar integration of SAW filter with HEMT on AlGaN/GaN heterostructure using fluoride-based plasma treatment
Proceedings - IEEE Ultrasonics Symposium, v. 1, 2006, p. 281-284
Wong, Kingyuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper

2005 27

A tri-section stepped-impedance resonator for cross-coupled bandpass filters
IEEE microwave and wireless components letters, v. 15, (6), 2005, JUN, p. 401-403
Zhang, HL; Chen, KJ Article
AlGaN-GaN double-channel HEMTs
IEEE transactions on electron devices, v. 52, (4), 2005, APR, p. 438-446
Chu, Rongming; Zhou, Yu Gang; Liu, Jie; Wang, Deliang; Chen, Kevin Jing; Lau, Kei May Article
AlGaN-GaNHEMTs on patterned silicon (111) substrate
IEEE electron device letters, v. 26, (3), March 2005, p. 130-132
Jia, Shuo; Dikme, Yilmaz Lmaz; Wang, Deliang; Chen, Kevin Jing; Lau, Kei May; Heuken, Michael Article
Broadband microwave noise characteristics of high-linearity composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
IEEE electron device letters, v. 26, (8), 2005, AUG, p. 521-523
Cheng, Zhiqun; Liu, Jie; Zhou, Yu Gang; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Article
CMOS-compatible micromachining techniques for fabricating high-performance edge-suspended RF microwave passive components on silicon substrate
Journal of micromechanics and microengineering, v. 15, (2), 2005, FEB, p. 328-335
Zhang, JW; Hon, WC; Leung, LLW; Chen, KJ Article
Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition
Journal of Electronic Materials, v. 34, (1), 2005, JAN, p. 112-118
Zhou, Yu Gang; Wang, Deliang; Chu, Rongming; Tang, Chak Wah; Qi, Yundong; Lü, Zhendong; Chen, Kevin Jing; Lau, Kei May Article
Enhanced-performance of AlGaN-GaNHEMTs grown on grooved sapphire substrates
IEEE electron device letters, v. 26, (12), December 2005, p. 870-872
Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing; Lau, Kei May Article
Highly linear A1(0.3)Ga(0.7)N-A1(0.05)Ga(0.95)N-GaN composite-channel HEMTs
IEEE electron device letters, v. 26, (3), 2005, MAR, p. 145-147
Liu, Jie; Zhou, Yu Gang; Chu, Rongming; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Article
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE electron device letters, v. 26, (7), 2005, JUL, p. 435-437
Cai, Yong; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films
Applied physics letters, v. 86, (3), 2005, JAN 17
Cai, Yong; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition
Journal of applied physics, v. 97, (5), 2005, MAR 1
Wang, Deliang; Jia, Shuo; Chen, Kevin Jing; Lau, Kei May; Dikme, Yilmaz Lmaz; Van Gemmern, Philipp; Lin, YC; Kalisch, Holger; Jansen, Rolf H.; Heuken, Michael Article
Microwave characterization and modeling of high aspect ratio through-wafer interconnect vias in silicon substrates
IEEE transactions on microwave theory and techniques, v. 53, (8), 2005, AUG, p. 2472-2480
Leung, LLW; Chen, KJ Article
Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor
IEEE electron device letters, v. 26, (7), 2005, JUL, p. 432-434
Chu, Chun San; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
Monostable-Bistable Transition Resonant Tunneling Logic Gate, MOBILE, Constructed with Monolithic Integration of RTD and FET
Int. Workshop on Future Information Processing Technologies, Porvoo Finland / Sepetember 4-8 1995
Yamamoto, M.; Maezawa, K.; Chen, K.J. Book chapter
A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure
Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, 2005, p. 385-388
Chu, Chun San; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May Conference paper
AlGaN/GaN HEMTs on Grooved Sapphire Substrate,'6th Int. Conf. on Nitride Semiconductors,(ICNS-6)
Bremen, Germany, Aug. 28-Sep. 2, 2005
Feng, ZhiHong; Cai, ShuJin; Chen, Kevin Jing; Lau, Kei May Conference paper
Bandpass and bandstop filters using CMOS-compatible micromachined edge-suspended coplanar waveguides
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 91-94
Zhang, Hualiang; Zhang, Jinwen; Leung, Lydia L.W.; Chen, Kevin J. Conference paper
Compact bandpass filters using slow-wave coplanar waveguide tri-section stepped-impedance resonators
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 2298-2301
Hualiang, Zhang; Chen, Kevin J. Conference paper
Fabrication of Suspended GaN Microstructures Using GaN on Patterned Silicon (GPS) Technique
6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Yang, Z.; Wang, Rong; Jia, Shuo; Wang, Deliang; Zhang, Bao Shun; Chen, Kevin Jing; Lau, Kei May Conference paper
GaN on Patterned Silicon (GPS) technique for fabrication of GaN-based MEMS
Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05, v. 1, 2005, p. 887-890
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Chen, Kevin Jing; Lau, Kei May Conference paper
GaN on Patterned Silicon (GPS) technique for GaN-based integrated microsensors
Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 298-301
Yang, Zhen Chuan; Wang, Ruonan; Wang, Deliang; Zhang, Baoshun; Chen, Kevinjing; Lau, Kei May Conference paper
Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth
Physica Status Solidi C: Conferences, v. 2, (7), 2005, p. 2663-2667
Zhou, Yugang; Chu, Rongming; Liu, Jie; Chen, Kevin Jing; Lau, Kei May Conference paper
MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates
2006 International Conference on Compound Semiconductor Manufacturing Technology, Vancouver, BC, Canada, Digest, p.243, April 24-27, 2006.
Tang, Chak Wah; Jiang, L.; Lau, Kei May; Chen, Kevin Jing Conference paper
Monolithic integrated c-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 1112-1115
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing Conference paper
Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits
Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 771-774
Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Chen, Kevinjing; Lau, Kei May Conference paper
Reduced Gate-bias dependence of 2DEG mobility in a Composite-Channel HEMT
6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Zhu, Jia; Liu, J.; Zhou, Yu Gang; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Conference paper
Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Device Research Conference - Conference Digest, DRC, v. 2005, 2005, p. 179-180
Cai, Yong; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May Conference paper

2004 18

A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs
Solid-state electronics, v. 48, (10-11), 2004, OCT-NOV, p. 2047-2050
Suligoj, T.; Liu, H.; Sin, JKO; Tsui, K.; Chu, RM; Chen, KJ; Biljanovic, P.; Wang, KL Article
Characterization of GaN grown on patterned Si(111) substrates
Journal of Crystal Growth, v. 272, (1-4), 2004, DEC 10, p. 489-495
Wang, Deliang; Dikme, Yilmaz Lmaz; Jia, Shuo; Chen, Kevin Jing; Lau, Kei May; Van Gemmern, Philipp; Lin, YC; Kalisch, Holger; Jansen, RoIf H.; Heuken, Michael Article
CMOS-compatible micromachined edge-suspended spiral inductors with high Q-factors and self-resonance frequencies
IEEE electron device letters, v. 25, (6), 2004, JUN, p. 363-365
Chen, KJ; Hon, WC; Zhang, JW; Leung, LLW Article
High-performance large-inductance embedded inductors in thin array plastic packaging (TAPP) for RF system-in-package applications
IEEE microwave and wireless components letters, v. 14, (9), 2004, SEP, p. 449-451
Chen, KJ; Chan, KW; Wong, MKW; Fok, NMK; Kwan, KKP; Fan, NCH Article
Low-loss coplanar waveguides interconnects on low-resistivity silicon substrate
IEEE transactions on components and packaging technologies, v. 27, (3), 2004, SEP, p. 507-512
Leung, LLW; Hon, WC; Chen, KJ Article
Low-loss microwave filters on CMOS-grade standard silicon substrate with low-k BCB dielectric
Microwave and optical technology letters, v. 40, (1), 2004, JAN 5, p. 9-11
Leung, LLW; Chen, KJ; Huo, X.; Chan, PCH Article
Accurate modeling of lossy silicon substrate for on-chip inductors and transformers design
IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers, 2004, p. 627-630
Huo, X.; Chen, K.J.; Luong, H.; Chan, P.C.H. Conference paper
Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity
Technical Digest - International Electron Devices Meeting, IEDM, 2004, p. 811-814
Liu, Jie; Zhou, Yugang; Chu, Rongming; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Conference paper
Characterization and modeling of a step-gate-oxide MOSFET for RF power amplifiers
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 1, 2004, p. 345-348
Jia, S.; Tsui, K.K.P.; Liao, X.; Chen, K.J. Conference paper
Fabrication of edge-suspended microwave passive components using CMOS-compatible micromachining
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 3, 2004, p. 1695-1698
Zhang, J.; Hon, W.C.; Leung, L.L.W.; Chen, K.J. Conference paper
GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 3, 2004, p. 2257-2260
Chu, Chun San; Zhou, Yugang; Chu, Rongming; Chen, Kevin Jing; Lau, Kei May Conference paper
High-performance CMOS-compatible micromachined edge-suspended coplanar waveguides on low-resistivity silicon substrate
Conference Proceedings- European Microwave Conference, v. 1, 2004, p. 45-48
Leung, L.L.W.; Zhang, J.; Hon, W.C.; Chen, K.J. Conference paper
High-performance edge-suspended spiral inductors and CPWS on CMOS-grade silicon substrates
2004 4th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2004, 2004, p. 586-589
Zhang, J.; Hon, W.C.; Leung, L.L.W.; Chen, K.J. Conference paper
High-performance low-cost embedded inductors using thin array plastic packaging (TAPP) for RF/microwave applications
Conference Proceedings- European Microwave Conference, v. 2, 2004, p. 519-522
Wong, M.; Fok, N.; Kwan, K.; Fan, N.; Chan, K.W.; Chen, K.J. Conference paper
High-Q CMOS-compatible micromachined edge-suspended spiral inductors
IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers, 2004, p. 263-266
Hon, W.C.; Zhang, J.; Leung, L.L.W.; Chen, K.J. Conference paper
Microwave characterization of high aspect ratio through-wafer interconnect vias in silicon substrates
IEEE MTT-S International Microwave Symposium Digest, v. 2, 2004, p. 1197-1200
Leung, L.L.W.; Chen, K.J. Conference paper
Quantitative Stress Characterization in GaN Films grown on patterned Si(111) by Micro-Raman Spectroscopy
2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25
Wang, De Liang; Jia, S.; Chen, Jing Kevin; Dikme, Y.; Van Gemmern, P.; Lin, Y.C.; Heuken, Michael Conference paper
Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT
2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25 2004
Chu, Rongming; Zhou, Yugang; Liu, Jie; Chen, Kevin Jing; Lau, Kei May Conference paper

2003 8

0.5 mu m silicon-on-sapphire metal oxide semiconductor field effect transistor for RF power amplifier applications
Japanese Journal of Applied Physics, v. 42, pt. 1, no. 8, Aug 2003, p. 4982-4986
Tsui, Kenneth; Chen, Kevin J.; Lam, Sang; Chan, Man Sun Article
Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures
Physica Status Solidi C, Vol. 0, (7), 2003, p. 2400-2403
Chu, Rongming; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
IEEE journal of solid-state circuits, v. 38, (2), 2003, FEB, p. 312-318
Chen, KJ; Niu, GF Article
A Low-cost Horizontal Current Bipolar Transistor Technology (HCBT) for the BiCMOS Integration with FinFETs
International Semiconductor Device Research Symposium (ISDRS), Washington D.C., pp. 518-519
Suligoj, T.; Liu, H.; Sin, J.K.O.; Tsui, K.; Chen, K.J.; Biljanovic, P.; Wang, K.L. Conference paper
A step-gate oxide SOI MOSFET for RF power amplifiers in short- and medium-range wireless applications
2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2003, p. 33-36
Liao, XP; Tsui, KKP; Liu, HT; Chen, KJ; Sin, JKO Conference paper
AlGaN/GaN/Graded-AlGaN double heterostructure HEMT
2003 Int. Conf. Solid-State Devices and Materials (SSDM2003), Tokyo, Japan, Sepetmber 16-18 2003, p. 918-919
Zhou, Y.G.; Chu, R.M.; Chen, K.J.; Lau, K.M. Conference paper
Silicon-on-Organic Integration of a 2.4 GHz VCO Using High Q Copper Inductors and Solder-bumped Flip Chip Technology
Proceedings of the Custom Integrated Circuits Conference, 2003, p. 537-540
Huo, X.; Xiao, G.W.; Chen, K.J.; Chan, P.C.H. Conference paper
Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors
2003 Electronic Material Conference (EMC2003), Salt Lake City, Utah, USA, June 25-27 2003, p. 85
Chu, Rongming; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May Conference paper

2002 5

Silicon-based high-Q inductors incorporating electroplated copper and low-K BCB dielectric
IEEE electron device letters, v. 23, (9), 2002, SEP, p. 520-522
Huo, X.; Chen, KJ; Chan, PCH Article
High-performance microwave passive components on silicon substrate
2002 3RD INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 2002, p. 263-266
Chen, KJ; Huo, X.; Leung, LLW; Chan, PCH Conference paper
High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer
IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2002, p. 403-406
Huo, X.; Chen, KJ; Chan, PCH Conference paper
High-Q copper inductors on standard silicon substrate with a low-K BCB dielectric layer
IEEE MTT-S International Microwave Symposium digest, 2002, p. 513-516
Xiao, H.; Chen, KJ; Chan, PCH Conference paper
RF Power Characteristics of Thin Film Silicon-on-Sapphire MOSFET
International Conference on Solid State Devices and Materials, Nagoya, Japan, September 17-20, pp. 594-595
Tsui, Kin Pun; Chen, Kevin J.; Lam, Sang; Chan, Mansun Conference paper

2001 1

On-Chip Microwave Filters on Standard Silicon Substrate Incorporating a Low-k BCB Dielectric Layer
European Microwave Conference at Milan, Italy
Leung, Lydia L.W.; Chen, Kevin J.; Huo, Xiao; Chan, Philip C.H. Conference paper

2000 2

Design and fabrication of reflective nematic displays with only one polarizer
Acta photonica sinica=光子学报, v. 29, (8), August 2000, p. 692-702
Yu, Feihong; Wang, Qian; Pan, Weimin; Chen, Jun; Guo, Haicheng Article
Experimental realization of reflective bistable cholesteric liquid crystal displays with new driving scheme and low driving voltage
光子學報=Acta photonica sinica, v. 29, (5), May 2000, p. 420-425
Yu, Feihong; Wang, Qian; Pan, Weimin; Gong, Ye; Chen, Huiguang; Chen, Jun; Guo, Haicheng Article

1999 2

A Symmetric Structure Based on Resonant Tunneling Diodes for Vision Chips
1999 National Symposium on Circuit and Systems (NSCAS'99), November 24 1999
Zhang, Bin; Chen, K.J.; Ruan, Gang; Chen, Richard M.M. Conference paper
Novel RTD-HEMT-RTD structure based on simulations
Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, 1999, p. 178-181
Zhang, Bin; Chen, Kevin J.; Gang, Ruan; Chen, Richard M.M. Conference paper

1998 1

Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multilevel output
IEEE journal of solid-state circuits, v. 33, (2), 1998, p. 268-274
Waho, T.; Chen, K.J.; Yamamoto, M. Article

1997 5

A novel functional logic circuit using resonant-tunneling devices for multiple-valued logic applications
Japanese Journal of Applied Physics, v. 36, pt. 1, no.3B, 1997, p. 1818-1821
Waho, Takao; Chen, Kevin J.; Yamamoto, Masafumi Article
High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMT's)
IEEE Transactions on Electron Devices, v. 44, (11), November 1997, p. 2038-2040
Chen, Jing; Maezawa, Koichi; Yamamoto, Masafumi Article
Circuit modeling of programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
Proceedings - IEEE International Symposium on Circuits and Systems, v. 3, 1997, p. 1628-1631
Niu, G.F.; Chen, K.J.; Chen, R.M.M.; Ruan, G.; Waho, T.; Maezawa, K.; Yamamoto, M. Conference paper
Microwave-frequency operation of resonant tunneling high electron mobility transistors
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 106-109
Chen, Kevin J. Conference paper
Small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)
Asia-Pacific Microwave Conference Proceedings, APMC, v. 2, 1997, p. 529-532
Chen, Kevin J. Conference paper

1996 15

A novel multiple-valued logic gate using resonant tunneling devices
IEEE electron device letters, v. 17, (5), 1996, p. 223-225
Waho, T.; Chen, K.J.; Yamamoto, M. Article
An exclusive-OR logic circuit based on controlled quenching of series-connected negative differential resistance devices
IEEE electron device letters, v. 17, (6), 1996, p. 309-311
Chen, K.J.; Waho, T.; Maezawa, K.; Yamamoto, M. Article
Device technology for monolithic integration of inp-based resonant tunneling diodes and hemts
IEICE transactions on electronics, v. E79C, (11), 1996, p. 1515-1523
Chen, K.J.; Maezawa, K.; Waho, T.; Yamamoto, M. Article
Frequency multipliers using InP-based resonant-tunneling high electron mobility transistors
IEEE electron device letters, v. 17, (5), 1996, p. 235-238
Chen, K.J.; Yamamoto, M. Article
High-performance InP-based enhancement-mode HEMT's using non-alloyed ohmic contacts and Pt-based buried gate technology
IEEE Trans. on Electron Devices, v. 43, (2),1996, Feb, p. 252-257
Chen, K.J.; Enoki, T.; Maezawa, K.; Arai, K.; Yamamoto, M. Article
InP-based high-performance monostable-bistable transition logic element (MOBILE): An intelligent logic gate featuring weighted-sum threshold operations
Japanese Journal of Applied Physics, v. 35, pt. 1, no. 2B, 1996, p. 1172-1177
Chen, Kevin J.; Maezawa, K.; Yamamoto, M. Article
InP-based high-performance monostable-bistable transition logic elements (MOBILE'S) using integrated multiple-input resonant-tunneling devices
IEEE electron device letters, v. 17, (3), 1996, p. 127-129
Chen, K.J.; Maezawa, K.; Yamamoto, M. Article
A novel functional logic gate using resonant-tunneling devices for multiple-valued loic applications
Extended Abst.1996 Int. Conf. on Solid State Devices and Materials (SSDM 96), Yokohama Japan, Auguest 1996 p. 740-742
Waho, T.; Chen, K.J.; Yamamoto, M. Conference paper
A variable function logic gate based on controlled quenching of series connected resonant tunneling devices
Proc. of the 1996 Electronics Society Conference of IEICE, Kanazawa Japan, Sepetmber 1996, p.111
Chen, K.J.; Waho, T.; Maezawa, K.; Yamamoto, M. Conference paper
High frequency characterization and circuit applications of resonant-tunneling high electron mobility transistors (RTHEMTs)
Extended Abstracts of the 44th Spring Meeting (1996), The Jap. Soc. of Appl. Phys., Saitama Japan, March 1996, p. 1307, vol.3
Chen, K.J.; Maezawa, K.; Yamamoto, M. Conference paper
InP-based ultrafast resonant tunneling high electron mobility transistors (RTHEMTs): novel I-V characteristics and circuitapplications
Proc. of the 1996 IEICE general conference, Tokyo Japan, March 1996, p.123
Chen, K.J.; Akeyoshi, T.; Maezawa, K. Conference paper
Literal gate using resonant-tunneling devices
International Symposium on Multiple-Valued Logic (ISMVL), 1996, p. 68-73
Waho, T.; Chen, K.J.; Yamamoto, M. Conference paper
Novel ultrafast functional device: resonant tunneling high electron mobility transistor
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1996, p. 60-63
Chen, Kevin J.; Maezawa, K.; Yamamoto, M. Conference paper
Programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
Annual Device Research Conference Digest, 1996, p. 170-171
Chen, Kevin J.; Waho, Takao; Maezawa, Koichi; Yamamoto, Masafumi Conference paper
Quantum functional circuits using series-connected resonant tunneling devices
Proc. of the 1996 Electronics Society Conference of IEICE, Kanazawa Japan, September 1996, p. 251-252
Yamamoto, M.; Maezawa, K.; Waho, T.; Chen, K.J. Conference paper

1995 8

Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications
Electronics letters, v. 31, (11), 1995, p. 925-927
Chen, K.J.; Maezawa, K.; Arai, K.; Yamamoto, M.; Enoki, T. Article
Monolithic integration of resonant tunneling diodes and FET's for monostable-bistable transition logic elements (MOBILE's)
IEEE electron device letters, v. 16, (2), 1995, p. 70-73
Chen, Kevin J.; Akeyoshi, Tomoyuki; Maezawa, Koichi Article
Monostable-bistable transition logic elements (MOBILEs) based on monolithic integration of resonant tunneling diodes and FETs
Japanese Journal of Applied Physics, v. 34, pt. 1, no. 2B, 1995, p. 1199-1203
Chen, Kevin J.; Akeyoshi, Tomoyuki; Maezawa, Koichi Article
Novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor
Applied physics letters, v. 67, 1995, p. 3608-3610
Chen, K.J.; Maezawa, K.; Yamamoto, M. Article
A Unified BSIM I-V Model for Circuit Simulation
1995 International Device Research Symposium Proceeding, Virginia, December 1995, p. 603-606
Cheng, Y.; Hu,Chenming; Chen, Kevin J.; Chan, Man Sun; Jeng, M.C.; Liu, Z.H.; Huang, J.H.; Ko, Ping Keung Conference paper
High-performance enhancement-mode InAlAs/InGaAs HEMT's using non-alloyed ohmic contact and Pt-based buried-gate
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1995, p. 428-431
Chen, Kevin J.; Enoki, Takatomo; Maezawa, Koichi; Arai, Kunihiro; Yamamoto, Masafumi Conference paper
Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications
Technical digest - International Electron Devices Meeting, 1995, p. 379-382
Chen, Kevin J.; Maezawa, Koichi; Yamamoto, Masafumi Conference paper
Reset-set flip-flop based on a novel approach to modulating resoant-tunneling current with FETs
Proc. of the 1995 IEICE general conference, Fukuoka Japan, March 1995, p. 130, vol. 2
Chen, K.J.; Akeyoshi, T.; Maezawa, K. Conference paper

1994 2

Reset-set flipflop based on a novel approach of modulating resonant-tunneling current with FET gates
Electronics letters, v. 30, (21), 1994, p. 1805-1806
Chen, K.J.; Akeyoshi, T.; Maezawa, K. Article
Monolithic integration of resonant tunneling diodes and FETs for Monostable-Bistable Transition Logic Elements (MOBILEs)
Extended Abstracts of the 55th Autumn Meeting (1994) The Jap. Soc. of Appl. Phys., Nagoya Japan, September 1994, p. 1059, vol. 3
Chen, K.J.; Akeyoshi, T.; Maezawa, K. Conference paper

1993 2

Single transistor static memory cell: Circuit application of a new quantum transistor
Applied Physics Letters, v. 62, 1993, p. 96-98
Chen, K.J.; Yang, C.H.; Wilson, R.A.; Wood, C.E.C. Article
Dynamics of energy and phase relaxation in ultrafast resonant tunneling transistors
American Physical Society annualmeeting, Seattle Washington, March, 1993
Chen, K.J.; Yang, C.H.; Wilson, R.A. Conference paper

1992 5

Modeling of a new field-effect resonant tunneling transistor
Journal of Applied Physics, v. 71, (3), 1992, p. 1537-1539
Chen, K.J.; Yang, C.H. Article
Observation of the negative persistent photoconductivity in an n-channel GaAs/AlxGa1-xAs single heterojunction
Applied Physics Letters, v. 60, (17), 1992, p. 2113-2115
Chen, K.J.; Yang, C.H.; Wilson, R.A. Article
Observation of the negative persistent photoconductivity in an n-channel GaAs/AlxGa1-xAs single heterojunction
American Physical Society annual meeting, Indianapolis Indiana, March 1992
Chen, K.J.; Yang, C.H.; Wilson, R.A. Conference paper
Resonant tunneling between two- and three-dimensions: modeling of tunneling diodes and tunneling transistors
American Physical Societyannual meeting, Cincinnati Ohio, March, 1991
Chen, K.J.; Yang, C.H. Conference paper
Single transistor static memory cell: circuit application of a new quantum transistor
1992 International Conference on Solid State Devices and Materials (SSDM 92), Tsukuba Japan, 1992, p. 741-743
Yang, C.H.; Chen, K.J.; Wilson, R.A.; Wood, C.E.C. Conference paper

1991 2

On the intrinsic bistability in resonant tunneling structures: observation of the area and temperature dependence of hysteresis
Journal of Applied Physics, v. 70, (4), 1991, p. 2473-2475
Chen, J.G.; Chen, K.J.; Wilson, R.A.; Johnson, W.; Yang, C.H. Article
The I-V characteristics of doublebarrier resonant tunneling diodes: observation and calculation on their temperature dependence and asymmetry
Journal of Applied Physics, v. 70, (6), 1991, p. 3131-3136
Chen, K.J.; Chen, J.G.; Yang, C.H.; Wilson, R.A. Article


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Article 26

650-V Normally-off GaN/SiC Cascode Device for Power Switching Applications
IEEE Transactions on Industrial Electronics, September 2021
Zhong, Kailun; Wang, Yuru; Lyu, Gang; Wei, Jin; Sun, Jiahui; Chen, Kevin J.
A Physics-Based Empirical Model of Dynamic I_OFFunder Switching Operation in p-GaN Gate Power HEMTs
IEEE Transactions on Power Electronics, v. 36, (9), September 2021, article number 9364720, p. 9796-9805
Wang, Yuru; Chen, Tao; Hua, Mengyuan; Wei, Jin; Zheng, Zheyang; Song, Wenjie; Yang, Song; Zhong, Kailun; Chen, Jing
An ultrathin-barrier AlGaN/GaN heterostructure: A recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits
Semiconductor Science and Technology, v. 36, (4), April 2021, article number 044002
Huang, Sen; Wang, Xinhua; Liu, Xinyu; Sun, Qian; Chen, Jing
Characterization of Dynamic Threshold Voltage in Schottky-Type p-GaN Gate HEMT Under High-Frequency Switching
IEEE Electron Device Letters, v. 42, (4), April 2021, p. 501-504
Zhong, Kailun; Xu, Han; Zheng, Zheyang; Chen, Junting; Chen, Kevin Jing
Characterization Of GaON As A Surface Reinforcement Layer Of p-GaN In Schottky-type p-GaN Gate HEMTs
Applied Physics Letters, v. 119, (5), 2 August 2021, article number 053503
Zhang, Lining; Zheng, Zheyang; Yang, Song; Song, Wenjie; Feng, Sirui; Chen, Jing
Compact, Flexible, and Transparent Antennas Based on Embedded Metallic Mesh for Wearable Devices in 5G Wireless Network
IEEE Transactions on Antennas and Propagation, v. 69, (4), April 2021, article number 9254157, p. 1864-1873
Qiu, Haochuan; Liu, Houfang; Jia, Xiufeng; Jiang, Zhou-Ying; Liu, Yan-Hua; Xu, Jianlong; Lu, Tianqi; Shao, Minghao; Ren, Tian-Ling; Chen, Jing
Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs
IEEE Electron Device Letters, v. 42, (7), July 2021, article number 9420748, p. 986-989
Chen, Junting; Hua, Mengyuan; Wang, Chengcai; Liu, Ling; Li, Lingling; Wei, Jin; Zhang, Li; Zheng, Zheyang; Chen, Jing
Gallium nitride-based complementary logic integrated circuits
Nature Electronics, 19 July 2021
Zheng, Zheyang; Zhang, Li; Song, Wenjie; Feng, Sirui; Xu, Han; Sun, Jiahui; Yang, Song; Chen, Tao; Wei, Jin; Chen, Jing
GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution
IEEE Journal of the Electron Devices Society, v. 9, May 2021, article number 9423527, p. 545-551
Wei, Jin; Zhang, Meng; Lyu, Gang; Chen, Jing
GaN MIS-HEMTs With Surface Reinforcement for Suppressed Hot-Electron-Induced Degradation
IEEE Electron Device Letters, v. 42, (4), April 2021, p. 489-492
Yang, Song; Zheng, Zheyang; Zhang, Li; Song, Wenjie; Chen, Kevin Jing
Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT
IEEE Electron Device Letters, v. 42, (5), May 2021, article number 9383262, p. 669-672
Hua, Mengyuan; Wang, Chengcai; Chen, Junting; Zhao, Junlei; Yang, Song; Zhang, Li; Zheng, Zheyang; Wei, Jin; Chen, Kevin Jing
IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs
IEEE Transactions on Industrial Electronics, October 2021
Zhong, Kailun; Wei, Jin; He, Jiabei; Feng, Sirui; Wang, Yuru; Yang, Song; Chen, Jing
Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices
IEEE Transactions on Power Electronics, v. 36, (11), April 2021, article number 9416882, p. 12158-12162
Sun, Jiahui; Zheng, Zheyang; Zhong, Kailun; Lyu, Gang; Chen, Jing
Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs
IEEE Transactions on Power Electronics, v. 36, (5), May 2021, article number 9222279, p. 5904-5914
Xu, Han; Wei, Jin; Xie, Ruiliang; Zheng, Zheyang; He, Jiabei; Chen, Kevin Jing
Monolithic Integration of Gate Driver and Protection Modules with p-GaN Gate Power HEMTs
IEEE Transactions on Industrial Electronics, August 2021, p. 1-1
Xu, Han; Tang, Gaofei; Wei, Jin; Zheng, Zheyang; Chen, Jing
Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters
IEEE Electron Device Letters, v. 42, (1), January 2021, article number 9264210, p. 26-29
Zheng, Zheyang; Song, Wenjie; Zhang, Li; Yang, Song; Wei, Jin; Chen, Jing
Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs
Applied Physics Letters, v. 118, (16), April 2021, article number 163502
Cheng, Yan; Wang, Yuru; Feng, Sirui; Zheng, Zheyang; Chen, Tao; Lyu, Gang; Ng, Yat Hon; Chen, Kevin Jing
OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs
IEEE Journal of Emerging and Selected Topics in Power Electronics, v. 9, (3), June 2021, article number 9144186, p. 3686-3694
Chen, Junting; Hua, Mengyuan; Wei, Jin; He, Jiabei; Wang, Chengcai; Zheng, Zheyang; Chen, Jing
On the operating speed and energy efficiency of GaN-based monolithic complementary logic circuits for integrated power conversion systems
Fundamental Research, v. 1, (6), November 2021, p. 661-671
Zheng, Zheyang; Xu, Han; Zhang, Li; Chen, Jing
P-GaN Gate HEMT with Surface Reinforcement for Enhanced Gate Reliability
IEEE Electron Device Letters, v. 42, (1), January 2021, article number 9253682, p. 22-25
Zhang, Li; Zheng, Zheyang; Yang, Song; Song, Wenjie; He, Jiabei; Chen, Jing
Principles and impacts of dynamic threshold voltage in a p-GaN gate high-electron-mobility transistor
Semiconductor Science and Technology, v. 36, (2), January 2021, article number 024006
Wei, Jin; Xu, Han; Xie, Ruiliang; Chen, Jing
RF Linearity Enhancement of GaN-on-Si HEMTs with a Closely Coupled Double-Channel Structure
IEEE Electron Device Letters, v. 42, (8), August 2021, article number 9449839, p. 1116-1119
Song, Wenjie; Zheng, Zheyang; Chen, Tao; Wei, Jin; Yuan, Li; Chen, Jing
Short Circuit Capability Characterization And Analysis Of P-GaN Gate High-Electron-Mobility Transistors Under Single And Repetitive Tests
IEEE Transactions on Industrial Electronics, v. 68, (9), September 2021, article number 9145816, p. 8798-8807
Sun, Jiahui; Wei, Jin; Zheng, Zheyang; Chen, Jing
Short Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison with SiC MOSFETs
IEEE Transactions on Industrial Electronics, 28 July 2021, article number 9499957
Sun, Jiahui; Zhong, Kailun; Zheng, Zheyang; Lyu, Gang; Chen, Jing
Threshold Voltage Instability Of Enhancement-Mode GaN Buried P-Channel MOSFETs
IEEE Electron Device Letters, v. 42, (11), 22 September 2021, p. 1584-1587
Zheng, Zheyang; Zhang, Li; Song, Wenjie; Chen, Tao; Feng, Sirui; Ng, Yat Hon; Sun, Jiahui; Xu, Han; Yang, Song; Wei, Jin; Chen, Kevin J.
Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach
Japanese Journal of Applied Physics, v. 60, (7), July 2021, article number 070903
Liao, Yaqiang; Chen, Tao; Wang, Jia; Ando, Yuto; Cai, Wentao; Yang, Xu; Watanabe, Hirotaka; Hirotani, Jun; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Chen, Jing; Amano, Hiroshi

Conference paper 7

A Bootstrap Voltage Clamping Circuit For Dynamic V_TH Characterization In Schottky-Type p-GaN Gate Power HEMT
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452232, p. 39-42
Zhong, Kailun; Xu, Han; Yang, Song; Zheng, Zheyang; Chen, Junting; Chen, Jing
Avalanche Capability of 650-V Normally-off GaN/SiC Cascode Power Device
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452274, p. 223-226
Zhong, Kailun; Sun, Jiahui; Wang, Yuru; Lyu, Gang; Feng, Sirui; Chen, Tao; Chen, Jing
Comparison of Short Circuit Robustness and Failure Mechanisms of GaN/SiC Cascode Devices and SiC Power MOSFETs
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452266, p. 207-210
Sun, Jiahui; Zhong, Kailun; Zheng, Zheyang; Lyu, Gang; Chen, Jing
Impact Ionization Induced Breakdown and Related HTRB Behaviors in 100-V p-GaN Gate HEMTs
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452204, p. 35-38
Cheng, Yan; Wang, Yuru; Feng, Sirui; Zheng, Zheyang; Chen, Tao; Lyu, Gang; Ng, Yat Hon; Chen, Jing
Impact Of OFF-state Gate Bias On Dynamic R_ON of p-GaN Gate HEMT
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452256, p. 47-50
Jiang, Zuoheng; Hua, Mengyuan; Huang, Xinran; Li, Lingling; Chen, Junting; Chen, Jing
Substrate Effects in GaN-on-Si Integrated Bridge Circuit and Proposal of Engineered Bulk Silicon Substrate for GaN Power ICs
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020, September 2020, article number 9360273
Wei, Jin; Zhang, Meng; Lyu, Gang; Chen, Jing
Surface Reinforcement Technology for Suppressing Hot-Carrier-Induced Degradations in p-GaN Gate Power HEMTs
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2021-May, May 2021, article number 9452259, p. 43-46
Zhang, Li; Yang, Song; Zheng, Zheyang; Song, Wenjie; Liao, Hang; Chen, Jing


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Article 16

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications
IEEE Transactions on Power Electronics, v. 35, (9), September 2020, p. 9669-9679
Lyu, Gang; Wang, Yuru; Wei, Jin; Zheng, Zheyang; Sun, Jiahui; Zhang, Long; Chen, Kevin J.
Characterization and Analysis of Low-Temperature Time-To-Failure Behavior in Forward-Biased Schottky-Type P-GaN Gate HEMTs
Applied Physics Letters, v. 116, (22), June 2020
He, Jiabei; Wei, Jin; Li, Yang; Zheng, Zheyang; Yang, Song; Huang, Baoling; Chen, Jing
Characterization of Static and Dynamic Behavior of 1200 V Normally OFF GaN/SiC Cascode Devices
IEEE Transactions on Industrial Electronics, v. 67, (12), December 2020, article number 8936541, p. 10284-10294
Wang, Yuru; Lyu, Gang; Wei, Jin; Zheng, Zheyang; He, Jiabei; Lei, Jiacheng; Chen, Jing
Dv/Dt-Control of 1200-V Normally-OFF SiC-JFET/GaN-HEMT Cascode Device
IEEE Transactions on Power Electronics, v. 36, (3), March 2021, article number 9163283, p. 3312-3322
Lyu, Gang; Wang, Yuru; Wei, Jin; Zheng, Zheyang; Chen, Jing
E-mode p-n Junction/AlGaN/GaN (PNJ) HEMTs
IEEE Electron Device Letters, v. 41, (4), April 2020, article number 9017996, p. 545-548
Wang, Chengcai; Hua, Mengyuan; Chen, Junting; Yang, Song; Zheng, Zheyang; Wei, Jin; Zhang, Li; Chen, Kevin Jing
GaN HEMT With Convergent Channel for Low Intrinsic Knee Voltage
IEEE Electron Device Letters, v. 41, (9), September 2020, article number 9145684, p. 1304-1307
Zheng, Zheyang; Song, Wenjie; Lei, Jiacheng; Qian, Qingkai; Wei, Jin; Hua, Mengyuan; Yang, Song; Zhang, Li; Chen, Kevin J.
GaN Power IC Technology on p-GaN Gate HEMT Platform
Japanese journal of applied physics, v. 59, (SG), April 2020, article number SG0801
Wei, Jin; Tang, Gaofei; Xie, Ruiliang; Chen, Kevin Jing
High I_ON and I_ON/I_OFF Ratio Enhancement-Mode Buried p-Channel GaN MOSFETs on p-GaN Gate Power HEMT Platform
IEEE Electron Device Letters, v. 41, (1), January 2020, article number 8907389, p. 26-29
Zheng, Zheyang; Song, Wenjie; Zhang, Li; Yang, Song; Wei, Jin; Chen, Jing
High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al₂O₃ Gate Dielectric and In Situ Si₃N₄-Cap Passivation
IEEE Transactions on Electron Devices, v. 67, (10), October 2020, article number 9189937, p. 4136-4140
Zhu, Liyang; Zhou, Qi; Yang, Xiu; Lei, Jiacheng; Chen, Kuangli; Luo, Zhihua; Huang, Peng; Zhou, Chunhua; Chen, Jing; Zhang, Bo
High-Temperature Characterization of a 1.2-kV SiC MOSFET Using Dynamic Short-Circuit Measurement Technique
IEEE Journal of Emerging and Selected Topics in Power Electronics, v. 8, (1), March 2020, p. 215-222
Sun, Jiahui; Yang, Shu; Xu, Hongyi; Zhang, Long; Wu, Xinke; Sheng, Kuang; Chen, Kevin Jing
Hole-Induced Degradation in E-Mode GaN MIS-FETs: Impact of Substrate Terminations
IEEE Transactions on Electron Devices, v. 67, (1), January 2020, article number 8930629, p. 217-223
Hua, Mengyuan; Yang, Song; Wei, Jin; Zheng, Zheyang; He, Jiabei; Chen, Jing
Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy
IEEE Electron Device Letters, v. 41, (5), May 2020, article number 9032129, p. 685-688
Yang, Song; Huang, Sen; Wei, Jin; Zheng, Zheyang; Wang, Yuru; He, Jiabei; Chen, Kevin Jing
Investigation of SiN_x and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges
Journal of the Electron Devices Society, v. 8, April 2020, p. 358-364
Yang, Song; Tang, Zhikai; Hua, Mengyuan; Zhang, Zhaofu; Wei, Jin; Lu, Yunyou; Chen, Kevin Jing
Overcoming the Limitations of Gallium Oxide Through Heterogeneous Integration
Science China Physics, Mechanics & Astronomy, v. 64, (1), 2021, article number 217331
Zhang, Yuhao; Chen, Jing
p-GaN Gate Power Transistor with Distributed Built-in Schottky Barrier Diode for Low-Loss Reverse Conduction
IEEE Electron Device Letters, v. 41, (3), March 2020, p. 341-344
Zhang, Li; Wei, Jin; Zheng, Zheyang; Song, Wenjie; Yang, Song; Xu, Han; Chen, Kevin Jing
Superjunction IGBT With Conductivity Modulation Actively Controlled by Two Separate Driving Signals
IEEE Transactions on Electron Devices, v. 67, (10), 19 August 2020, article number 9171548, p. 4335-4339
Wei, Jin; Zhang, Meng; Chen, Jing

Conference paper 16

700-V p-GaN Gate HEMT with Low-Voltage Third Quadrant Operation Using Area-Efficient Built-in Diode
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, ISPSD, 2020-September, September 2020, article number 9170075, p. 521-524
Zhang, Li; Wei, Jin; Zheng, Zheyang; Song, Wenjie; Yang, Song; Feng, Sirui; Chen, Kevin J.
A Novel Ultra-Thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-Temperature Reverse Blocking Characteristic
2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, 3 November 2020, article number 9278128
Zhu, Liyang; Zhou, Qi; Chen, Kuangli; Yang, Xiu; Lei, Jiacheng; Luo, Zhihua; Zhou, Chunhua; Chen, Kevin J; Zhang, Bo
A SPICE-Compatible Equivalent-Circuit Model of Schottky Type p-GaN Gate Power HEMTs with Dynamic Threshold Voltage
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170086, p. 325-328
Xu, Han; Wei, Jin; Xie, Ruiliang; Zheng, Zheyang; Chen, Kevin J.
All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-temperature Power Switching Applications
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020, September 2020, article number 9360291
Wang, Yuru; Lyu, Gang; Wei, Jin; Zheng, Zheyang; Zhong, Kailun; Chen, Jing
Design of Dual-Gate Superjunction IGBT towards Fully Conductivity-Modulated Bipolar Conduction and Near-Unipolar Turn-Off
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170090, p. 498-501
Wei, Jin; Zhang, Meng; Chen, Kevin J.
Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-Sreptember, September 2020, article number 9170101, p. 349-352
Liao, Yaqiang; Chen, Tao; Wang, Jia; Ando, Yuto; Yang, Xu; Watanabe, Hirotaka; Hirotani, Jun; Kushimoto, Maki; Deki, Manato; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Chen, Kevin J.; Amano, Hiroshi
Distinct Short Circuit Capability of 650-V p-GaN Gate HEMTs under Single and Repetitive Tests
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-Septeber, September 2020, article number 9170148, p. 313-316
Sun, Jiahui; Wei, Jin; Zheng, Zheyang; Lyu, Gang; Chen, Kevin J.
Dv/Dt-control of 1200-V Co-packaged SiC- JFET/GaN-HEMT Cascode Device
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170127, p. 86-89
Lyu, Gang; Wang, Yuru; Wei, Jin; Zheng, Zheyang; Sun, Jiahui; Chen, Kevin J.
Dynamic V_th in p-GaN Gate Power HEMTs and Its Impacts upon Power Switching Circuits
2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, 3 November 2020, article number 9278400
Wei, Jin; Xu, Han; Xie, Ruiliang; Chen, Kevin J
E-mode p-GaN Gate HEMT with p-FET Bridge for Higher V_TH and Enhanced V_TH Stability
Technical Digest - International Electron Devices Meeting, IEDM, v. 2020-December, December 2020, article number 9371969, p. 23.1.1-23.1.4
Hua, Mengyuan; Chen, Junting; Wang, Chengcai; Liu, Ling; Li, Lingling; Zhao, Junlei; Jiang, Zuoheng; Wei, Jin; Zhang, Li; Zheng, Zheyang; Chen, Kevin Jing
E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170039, p. 14-17
Wang, Chengcai; Hua, Mengyuan; Yang, Song; Zhang, Li; Chen, Kevin J.
Enhancement-Mode GaN p-Channel MOSFETs for Power Integration
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, ISPSD, v. 2020-September, September 2020, article number 9170081, p. 525-528
Zheng, Zheyang; Song, Wenjie; Zhang, Li; Yang, Song; Xu, Han; Wong, Roy K.-Y.; Wei, Jin; Chen, Kevin J.
Gate Reliability and VTH Stability Investigations of p-GaN HEMTs
2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, 3 November 2020, article number 9278305
Hua, Mengyuan; Wang, Chengcai; Chen, Junting; Zhang, Li; Zheng, Zheyang; Chen, Kevin J.
Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of p-GaN HEMT under Reverse-bias Stress
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020, September 2020, article number 9170043, p. 18-21
Chen, Junting; Hua, Mengyuan; Jiang, Jiali; He, Jiabei; Wei, Jin; Chen, Kevin J.
Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2020-September, September 2020, article number 9170191, p. 290-293
He, Jiabei; Wei, Jin; Zheng, Zheyang; Yang, Song; Li, Yang; Huang, Baoling; Chen, Kevin J.
Planar GaN Power Integration – The World is Flat
Technical Digest - International Electron Devices Meeting, IEDM, v. 2020, December 2020, article number 9372069, p. 27.1.1-27.1.4
Chen, Kevin Jing; Wei, Jin; Tang, Gaofei; Xu, Han; Zheng, Zheyang; Zhang, Li; Song, Wenjie


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Article 18

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current
npj 2D Materials and Applications, v. 3, (1), 13 June 2019, article number 24
Qian, Qingkai; Lei, Jiacheng; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Zhong, Kailun; Zheng, Zheyang; Chen, Jing Kevin
A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor
Applied Physics Express, v.12, (10), 2019, article number 106505
Wang, Yuru; Lyu, Gang; Wei, Jin; Zheng, Zheyang; Lei, Jiacheng; Song, Wenjie; Zhang, Wanlong; Hua, Mengyuan; Chen, Jing
Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel
Applied Physics Letters, v. 114, (5), February 2019, article number 053109
Cai, Xiangbin; Hua, Mengyuan; Zhang, Zhaofu; Yang, Song; Zheng, Zheyang; Cai, Yuan; Chen, Jing; Wang, Ning
Capture and Emission Mechanisms of Defect States at Interface Between Nitride Semiconductor and Gate Oxides in GaN-based Metal-oxide-semiconductor Power Transistors
Journal of Applied Physics, v. 126, (16), October 2019, article number 164505
Huang, Sen; Wang, Xinhua; Liu, Xinyu; Zhao, Rui; Shi, Wen; Zhang, Yichuan; Fan, Jie; Yin, Haibo; Wei, Ke; Zheng, Yingkui; Shi, Jingyuan; Wang, Xiaolei; Wang, Wenwu; Sun, Qian; Chen, Jing
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in p-GaN Gate HEMTs
IEEE Electron Device Letters, v. 40, (4), April 2019, article number 8644033, p. 526-529
Wei, Jin; Xie, Ruiliang; Xu, Han; Wang, Hanxing; Wang, Yuru; Zhong, Kailun; Tang, Gaofei; He, Jiabei; Zhang, Meng; Chen, Kevin Jing
Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling
IEEE Journal of Emerging and Selected Topics in Power Electronics, v.7, (3), Septemeber 2019, article number 8746174, p. 1425-1439
Yang, Shu; Han, Shaowen; Sheng, Kuang; Chen, Jing
Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride
ACS Applied Electronic Materials, v. 1, (5), 28 May 2019, p. 642-648
Hua, Mengyuan; Cai, Xiangbin; Yang, Song; Zhang, Zhaofu; Zheng, Zheyang; Wang, Ning; Chen, Jing
Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type p -GaN Gate HEMTs
IEEE Transactions on Electron Devices, v. 66, (8), August 2019, p. 3453-3458
He, Jiabei; Wei, Jin; Yang, Song; Wang, Yuru; Zhong, Kailun; Chen, Jing
Gate Structure Design of SiC Trench IGBTs for Injection-Enhancement Effect
IEEE Transactions on Electron Devices, v. 66, (7), July 2019, p. 3034-3039
Wei, Jin; Zhang, Meng; Jiang, Huaping; Li, Baikui; Chen, Kevin Jing
Investigation of Dynamic I_OFF Under Switching Operation in Schottky-Type p-GaN Gate HEMTs
IEEE Transactions on Electron Devices, v. 66, (9), September 2019, article number 8784243, p. 3789-3794
Wang, Yuru; Wei, Jin; Yang, Song; Lei, Jiacheng; Hua, Mengyuan; Chen, Kevin Jing
Mechanism and Novel Structure for di/dt Controllability in U-Shaped Channel Silicon-on-Insulator Lateral IGBTs
IEEE Electron Device Letters, v. 40, (10), October 2019, article number 8812703, p. 1658-1661
Zhang, Long; Zhu, Jing; Cao, Shilin; Ma, Jie; Li, Ankang; Wei, Jin; Lyu, Gang; Li, Shaohong; Li, Sheng; Wei, Jiaxing; Wu, Wangran; Sun, Weifeng; Chen, Jing
Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates
Applied Physics Express, v. 12, (2), February 2019, article number 024001
Huang, Sen; Wang, Xinhua; Liu, Xinyu; Wang, Yuankun; Fan, Jie; Yang, Shuo; Yin, Haibo; Wei, Ke; Wang, Wenwu; Gao, Hongwei; Zhou, Yu; Sun, Qian; Chen, Jing
Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode
IEEE Transactions on Electron Devices, v. 66, (5), May 2019, article number 8672454, p. 2106-2112
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Qian, Qingkai; Hua, Mengyuan; Zheng, Zheyang; Chen, Jing
Short Circuit Capability and Short Circuit Induced V_TH Instability of a 1.2kV SiC Power MOSFET
IEEE Journal of Emerging and Selected Topics in Power Electronics, v. 7, (3), September 2019, article number 8695780, p. 1539-1546
Sun, Jiahui; Wei, Jin; Zheng, Zheyang; Wang, Yuru; Chen, Kevin Jing
Simulation Study of a Power MOSFET With Built-in Channel Diode for Enhanced Reverse Recovery Performance
IEEE Electron Device Letters, v. 40, (1), January 2019, article number 8534459, p. 79-82
Zhang, Meng; Wei, Jin; Zhou, Xianda; Jiang, Huaping; Li, Baikui; Chen, Jing
Superjunction MOSFET With Dual Built-In Schottky Diodes for Fast Reverse Recovery: A Numerical Simulation Study
IEEE Electron Device Letters, v. 40, (7), July 2019, p. 1155-1158
Wei, Jin; Zhang, Meng; Jiang, Huaping; Zhou, Xianda; Li, Baikui; Chen, Jing
Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature
Physica Status Solidi (B), November 2019, article number 1900554
Takahashi, Masahiro; Tanaka, Atsushi; Ando, Yuto; Watanabe, Hirotaka; Deki, Manato; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Shima, Kohei; Kojima, Kazunobu; Chichibu, Shigefusa F.; Chen, Jing; Amano, Hiroshi
Switching Transient Analysis for Normally-OFF GaN Transistor With p-GaN Gate in a Phase-Leg Circuit
IEEE Transactions on Power Electronics, v. 34, (4), April 2019, article number 8401695, p. 3711-3728
Xie, Ruiliang; Yang, Xu; Xu, Guangzhao; Wei, Jin; Wang, Yuru; Wang, Hanxing; Tian, Mofan; Zhang, Feng; Chen, Wenjie; Wang, Laili; Chen, Jing

Conference paper 17

Characterization of Dynamic I_OFF in Schottky-Type p-GaN Gate HEMTs
Proceedings of the 31st International Symposium on Power Semiconductor Devices & ICs 19-23 May 2019, Shanghai, China / IEEE. Shanghai, China : IEEE, 2019, p. 463-466
Wang, Yuru; Wei, Jin; Yang, Song; Lei, Jiacheng; Hua, Mengyuan; Chen, Jing
Characterization of Dynamic I_OFF in Schottky-Type p-GaN Gate HEMTs
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019, May 2019, article number 8757660, p. 463-466
Wang, Yuru; Wei, Jin; Yang, Song; Lei, Jiacheng; Hua, Mengyuan; Chen, Kevin Jing
Charge-Modulated Schottky Barrier Lowering Effect in GaN Double-Channel Lateral Power SBDs with Gated Anode
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757606, p. 459-462
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Qian, Qingkai; Hua, Mengyuan; Zheng, Zheyang; Wang, Yuru; Chen, Jing
Development of GaN power Integrated Circuits
International conference on Solid State Devices and Materials (SSDM 2019), Nagoya, Japan, 2-5 September 2019
Chen, Kevin Jing; Wei, Jin
DLTS Investigation of Transient Capacitance and Trap States on p-GaN Gate HEMT Structures
The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, Washington, United States, 7-12 July 2019
Huang, Sen; Wei, Jin; Yang, Song; Wang, Yuru; Zheng, Zheyang; He, Jiabei; Chen, Kevin Jing
Double-Channel High-Electron-Mobility Transistor for Linearity Enhancement in RF/Microwave Applications
2019 Compound Semiconductor Week (CSW), 2019
Song, Wenjie; Zheng, Zheyang; Lei, Jiacheng; Wei, Jin; Yuan, Li; Chen, Jing
Dynamic Threshold Voltage in p-GaN Gate HEMT
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757602, p. 291-294
Wei, Jin; Xu, Han; Xie, Ruiliang; Zhang, Meng; Wang, Hanxing; Wang, Yuru; Zhong, Kailun; Hua, Mengyuan; He, Jiabei; Chen, Jing
Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2019-May, May 2019, article number 8757600, p. 467-470
Hua, Mengyuan; Yang, Song; Zheng, Zheyang; Wei, Jin; Zhang, Zhaofu; Chen, Jing
Identifying the Location of Hole-Induced Gate Degradation in LPCVD?SiN_x/GaN MIS-FETs under High Reverse-Bias Stress
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757652, p. 435-438
Zheng, Zheyang; Hua, Mengyuan; Wei, Jin; Zhang, Zhaofu; Chen, Jing
Integrated High-Speed Over-Current Protection Circuit for GaN Power Transistors
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757685, p. 275-278
Xu, Han; Tang, Gaofei; Wei, Jin; Chen, Jing
Integration on GaN-on-Si p-GaN gate HEMT platform
The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019), Okinawa, Japan, 10-15 November 2019
Chen, Kevin Jing
Investigations of p-shielded SiC trench IGBT with considerations on IE effect, oxide protection and dynamic degradation
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757642, p. 199-202
Wei, Jin; Zhang, Meng; Jiang, Huaping; Li, Baikui; Zheng, Zheyang; Chen, Jing
Repetitive Short Circuit Energy Dependent V_TH Instability of 1.2kV SiC Power MOSFETs
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757639, p. 263-266
Sun, Jiahui; Wei, Jin; Zheng, Zheyang; Wang, Yuru; Chen, Jing
Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757587, p. 411-414
Huang, Sen; Wang, Xinhua; Liu, Xinyu; Kang, Xuanwu; Fan, Jie; Yang, Shuo; Yin, Haibo; Wei, Ke; Zheng, Yingkui; Wang, Xiaolei; Wang, Wenwu; Shi, Jingyuan; Gao, Hongwei; Sun, Qian; Chen, Jing
Reverse-bias stability and reliability of enhancement-mode gan-based mis-fet
Proceedings of International Conference on ASIC, v. 2019, October 2019, article number 8983535
Hua, Mengyuan; Yang, Song; Wei, Jin; Zheng, Zheyang; He, Jiabei; Chen, Jing
Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline GaO_xN_{1- x} Channel
Technical Digest - International Electron Devices Meeting, IEDM, v. 2018-December, January 2019, article number 8614687, p. 30.3.1-30.3.4
Hua, Mengyuan; Cai, Xiangbin; Yang, Song; Zhang, Zhaofu; Zheng, Zheyang; Wei, Jin; Wang, Ning; Chen, Jing
Temperature-Dependent Gate Degradation of p-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, v. 2019-May, May 2019, article number 8757574, p. 295-298
He, Jiabei; Wei, Jin; Yang, Song; Hua, Mengyuan; Zhong, Kailun; Chen, Jing


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Article 20

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode
IEEE Electron Device Letters, v. 39, (2), February 2018, article number 8214234, p. 260-263
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Qian, Qingkai; Zheng, Zheyang; Hua, Mengyuan; Chen, Jing
Ab initio study of impact of nitridation at amorphous-SiNx/GaN interface
Applied Physics Express, v. 11, (8), August 2018, article number 081003
Zhang, Zhaofu; Hua, Mengyuan; He, Jiabei; Tang, Gaofei; Qian, Qingkai; Chen, Jing
An Analytical Investigation on the Charge Distribution and Gate Control in the Normally-Off GaN Double-Channel MOS-HEMT
IEEE Transactions on Electron Devices, v. 65, (7), July 2018, p. 2757-2764
Wei, Jin; Zhang, Meng; Li, Baikui; Tang, Xi; Chen, Jing
Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiN_x Gate Dielectric
Physica Status Solidi (A) Applications and Materials, v. 215, (10), May 2018, article number 1700641
Hua, Mengyuan; Qian, Qingkai; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing
Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT
IEEE Electron Device Letters, v. 39, (1), January 2018, article number 8101516, p. 59-62
Wei, Jin; Lei, Jiacheng; Tang, Xi; Li, Baikui; Liu, Shenghou; Chen, Jing
Dependence of V_TH Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET
IEEE Electron Device Letters, v. 39, (3), March 2018, p. 413-416
Hua, Mengyuan; Wei, Jin; Bao, Qilong; Zhang, Zhaofu; Zheng, Zheyang; Chen, Jing
Dynamic OFF-State Current (Dynamic I_OFF) in p-GaN Gate HEMTs With an Ohmic Gate Contact
IEEE Electron Device Letters, 39, 9, September 2018, article number 8402216
Wang, Yuru; Hua, Mengyuan; Tang, Gaofei; Lei, Jiacheng; Zheng, Zheyang; Wei, Jin; Chen, Jing
Efficiency Enhancement of InGaN/GaN Blue Light-emitting Diodes with Top Surface Deposition of AlN/Al2O3
Nano Energy, v. 43, January 2018, p. 259-269
Kim, Kwangeun; Hua, Mengyuan; Liu, Dong; Kim, Jisoo; Chen, Kevin J; Ma, Zhenqiang
High-capacitance-density p-Gan gate capacitors for high-frequency power integration
IEEE Electron Device Letters, v. 39, (9), September 2018, article number 8408835, p. 1362-1365
Tang, Gaofei; Kwan, Man Ho; Su, Ru Yi; Yao, F. W.; Lin, Y. M.; Yu, J. L.; Yang, Thomas; Chern, Chan Hong; Tsai, Tom; Tuan, Hsiao Chin; Kalnitsky, Alex; Chen, Jing
Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET
IEEE Transactions on Electron Devices, v. 65, (9), September 2018, article number 8423427, p. 3831-3838
Hua, Mengyuan; Wei, Jin; Bao, Qilong; Zheng, Zheyang; Zhang, Zhaofu; He, Jiabei; Chen, Jing
In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study
Langmuir, v. 34, (8), 2018, p. 2882-2889
Qian, Qingkai; Zhang, Zhaofu; Chen, Kevin J.
Interface Engineering of Monolayer MoS₂/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment
ACS Applied Materials Interfaces, v. 10, (20), May 2018, p. 17419-17426
Zhang, Zhaofu; Qian, Qingkai; Li, baikui; Chen, Jing
Layer-dependent Second-order Raman Intensity of MoS₂ and WSe₂: Influence of Intervalley Scattering
Physical Review B, v. 97, (16), April 2018, article number 165409
Qian, Qingkai; Zhang, Zhaofu; Chen, Jing
Performance and V_TH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially-Recessed MIS-HEMTs with LPCVD-SiN_x/PECVD-SiN_x Gate Dielectric Stack
IEEE Transactions on Electron Devices, v. 65, (8), Aug 2018, article number 8405596, p. 3185-3191
He, Jiabei; Hua, Mengyuan; Zhang, Zhaofu; Chen, Jing
Photocurrent characteristics of metal-AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation
Applied Physics Express, v. 11, (5), May 2018, article number 054101
Tang, Xi; Li, Baikui; Chen, Kevin Jing; Wang, Jiannong
Photon Emission and Current-collapse Suppression of AlGaN/GaN Field-effect Transistors with Photonic-ohmic Drain at High Temperatures
Applied Physics Express, v. 11, (7), July 2018, article number 071003
Tang, Xi; Zhang, Zhaofu; Wei, Jin; Li, Baikui; Wang, Jiannong; Chen, Jing
Reverse-blocking Normally-OFF GaN Double-channel MOS-HEMT with Low Reverse Leakage Current and Low ON-state Resistance
IEEE Electron Device Letters, v. 39, (7), July 2018, p. 1003-1006
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Qian, Qingkai; Zheng, Zheyang; Hua, Mengyuan; Chen, Jing
The 2018 GaN power electronics roadmap
Journal of physics. D. Applied physics, v. 51, (16), 26 March 2018, article number 163001
H amano; Y baines; E beam; Matteo borga; T bouchet; Paul r chalker; M charles; Chen, Kevin Jing; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; De Souza, Maria?Merlyne; Decoutere, Stefaan; Cioccio, L.?Di; Eckardt, Bernd; Egawa, Takashi; Fay, P.; Freedsman, Joseph?J.; Guido, L.; H?berlen, Oliver; Haynes, Geoff; Heckel, Thomas; Hemakumara, Dilini; Houston, Peter; Hu, Jie; Hua, Mengyuan; Huang, Qingyun; Huang, Alex; Jiang, Sheng; Kawai, H.; Kinzer, Dan; Kuball, Martin; Kumar, Ashwani; Lee, Kean Boon; Li, Xi; Marcon, Denis; Marz, Martin; McCarthy R.; Meneghesso, Gaudenzio; Meneghini, Matteo; Morvan, E.; Nakajima, A.; Narauyanan, E.M.S.; Oliver, Stephen; Palacios, Tomas; Piedra, Daniel; Plissonnier, M.; Reddy, R.; Sun, Min; Thayne, Iain; Torres, A.; Trivellin, Nicola; Unni, V.; Uren, Michael J.; Van Hon, Marleen; Wallis, David J.; Wang, J.; Xie, J.; Yagi, S.; Yang, Shu; Youtsey, C.; Yu, Ruiyang; Zanoni, Enrico
Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices
IEEE Transactions on Electron Devices, v. 65, (1), January 2018, p. 207-214
Huang, Sen; Liu, Xinyu; Wang, Xinhua; Kang, Xuanwu; Zhang, Jinhan; Fan, Jie; Shi, Jingyuan; Wei, Ke; Zheng, Yingkui; Gao, Hongwei; Sun, Qian; Wang, Maojun; Shen, Bo; Chen, Kevin J.
V_TH instability of p-GaN gate HEMTs under static and dynamic gate stress
IEEE Electron Device Letters, v. 39, (10), October 2018, article number 8451943, p. 1576-1579
He, Jiabei; Tang, Gaofei; Chen, Jing

Conference paper 18

An Interdigitated GaN MIS-HEMT/SBD Normally-off Power Switching Device with Low ON-resistance and Low Reverse Conduction Loss
Technical Digest - International Electron Devices Meeting, IEDM, v. F134366, 23 January 2018, January 2018, p. 25.2.1-25.2.4
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Qian, Qingkai; Hua, Mengyuan; Zhang, Zhaofu; Zheng, Zheyang; Chen, Jing
Dynamic OFF-State Leakage Current (I_OFF) in GaN power HEMTs
International Workshop on Nitride Semiconductor 2018 (IWN2018), Kanazawa, Japan, 11-16 November 2018
Wang, Yuru; Hua, Mengyuan; Tang, Gaofei; Zheng, Zheyang; Yang, Song; Chen, Jing
Dynamic OFF-State Leakage Current (I_OFF) in GaN Power HEMTs
International Workshop on Nitride Semiconductors (IWN 2018), Kanazawa, Japan, 11-16 November 2018
Wang, Yuru; Hua, Mengyuan; Tang, Gaofei; Zheng, Zheyang; Yang, Song; Chen, Jing
Enhancement-mode GaN-based MIS-FETs and MIS-HEMTs
Materials Research Society Spring Meeting & Exhibit (2018 MRS), Phoenix, USA, 2-6 April 2018
Chen, Kevin Jing; Hua, Mengyuan
GaN Power Integrated Circuits
International Workshop on Nitride Semiconductors (IWN 2018), Kanazawa, Japan, 11-16 November 2018
Chen, Kevin Jing; Tang, Gaofei
High-performance Enhancement-mode GaN Power MIS-FET with Interface Protection Layer
International Conference on Digital Signal Processing, DSP, v. 2018-November, January 2019, article number 8631634
Hua, Mengyuan; Chen, Jing
High-speed, high-reliability GaN power device with integrated gate driver
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, 22 June 2018, p. 76-79
Tang, Gaofei; Kwan, M.-H.; Zhang, Zhaofu; He, Jiabei; Lei, Jiacheng; Su, R.-Y.; Yao, F.-W.; Lin, Y.-M.; Yu, J.-L.; Yang, Thomas; Chern, Chan-Hong; Tsai, Tom; Tuan, H. C.; Kalnitsky, Alexander; Chen, Jing
Modeling the gate driver IC for GaN transistor: A black-box approach
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, v. 2018-March, April 2018, p. 2900-2904
Xie, Ruiliang; Xu, Guangzhao; Yang, Xu; Tang, Gaofei; Wei, Jin; Tian, Yidong; Zhang, Feng; Chen, Wenjie; Wang, Laili; Chen, Jing
Modification of amorphous-SiNx/GaN interface trap density by nitridation: A first-principles calculation study
2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018, Hyatt RegencyAustin, United States, 7-10 May 2018
Zhang, Zhaofu; Hua, Mengyuan; He, Jiabei; Qian, Qingkai; Chen, Jing
Monitoring the Surface Functionalizaion of MoS2 and WSe2 for High-k Integration Using In Situ Resonant Raman Spectroscopy - A First-principle study
Materials Research Society Spring Meeting & Exhibit (2018 MRS), Phoenix, USA, 2-6 April 2018
Qian, Qingkai; Zhang, Zhaofu; Chen, Jing
Opto-electrical memory devices realized on AlGaN/GaN heterostructure platform
International Workshop on Nitride Semiconductors, IWN2018, Kanazawa, Japan, 11-16 Novemner 2018
Tang, Xi; Zhou, Q; Qiu, R; Zheng, R; Li, Baikui; Chen, Jing; Wang, Jiannong
Performance and stability of enhancement-mode fully-recessed GaN MIS-FETs and partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx gate dielectric
2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018, Hyatt RegencyAustin, United States, 7-10 May 2018
He, Jiabei; Hua, Mengyuan; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing
Reliability and Stability of Normally-off GaN Power MIS-FETs with LPCVD-SiNx Gate Dielectric
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), December 2018, article number 8565824, p. 527-530
Hua, Mengyuan; Chen, Jing
Reverse-Bias Stability and Reliability of Hole-Barrier-Free E-mode LPCVD-SiNx/GaN MIS-FETs
Technical Digest - International Electron Devices Meeting, IEDM, v. F134366, 23 January 2018, p. 33.2.1-33.2.4
Hua, Mengyuan; Wei, Jin; Bao, Qilong; He, Jiabei; Zhang, Zhaofu; Zheng, Zheyang; Lei, Jiacheng; Chen, Jing
Reverse-blocking AlGaN/GaN Normally-off MIS-HEMT with Double-recessed Gated Schottky Drain
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 276-279
Lei, Jiacheng; Wei, Jin; Tang, Gaofei; Chen, Jing
SiC Trench IGBT with Diode-clamped P-shield for Oxide Protection and Enhanced Conductivity Modulation
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2018-May, June 2018, p. 411-414
Wei, Jin; Zhang, Meng; Jiang, Huaping; To, Suet; Kim, Sunghan; Kim, Jun Youn; Chen, Jing
Threshold Voltage Instability in p-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress
International Workshop on Nitride Semiconductor 2018 (IWN2018), Kanazawa, Japan, 11-16 November 2018
He, Jiabei; Tang, Gaofei; Hua, Mengyuan; Chen, Jing
Understanding the Dynamic Behaviro in GaN-on-Si Power Devices and IC’s
The International Workshop on Power Supply On Chip (PwrSoC 2018), Hsinchu, Taiwan, 17-19 October 2018
Chen, Kevin Jing


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Article 15

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance
IEEE Transactions on Device and Materials Reliability, v. 17, (2), June 2017, article number 7898842, p. 432-437
Zhang, Meng; Wei, Jin; Jiang, Huaping; Chen, Jing; Cheng, Ching Hsiang
An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration
IEEE Transactions on Power Electronics, v. 32, (8), August 2017, article number 7592895, p. 6416-6433
Xie, Ruiliang; Wang, Hanxing; Tang, Gaofei; Yang, Xu; Chen, Kevin J.
Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform
IEEE ELECTRON DEVICE LETTERS, v. 38, (9), September 2017, p. 1282-1285
Tang, Gaofei; Kwan, Alex M. H.; Wong, Roy K. Y.; Lei, Jiacheng; Su, R. Y.; Yao, F. W.; Lin, Y. M.; Yu, J. L.; Tsai, Tom; Tuan, H. C.; Kalnitsky, Alexander; Chen, Kevin J.
Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations
IEEE Transactions on Electron Devices, v. 64, (6), June 2017, p. 2592-2598
Wei, Jin; Zhang, Meng; Jiang, Huaping; Wang, Hanxing; Chen, Jing
Dynamic RON of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination
IEEE Electron Device Letters, v. 38, (7), July 2017, article number 7933267, p. 937-940
Tang, Gaofei; Wei, Jin; Zhang, Zhaofu; Tang, Xi; Hua, Mengyuan; Wang, Hanxing; Chen, Jing
Enhanced Dielectric Deposition on Single-Layer MoS2 with Low Damage Using Remote N2 Plasma Treatment
Nanotechnology, v. 28, (17), April 2017, article number 175202
Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Tang, Gaifei; Lei, Jiacheng; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Jing
GaN-on-Si Power Technology: Devices and Applications
IEEE Transactions on Electron Devices, v. 64, (3), March 2017, p. 779-795, Article number 7862945
Chen, Kevin Jing; H?berlen, Oliver; Lidow, Alex; Tsai, Chun Lin; Ueda, Tetsuzo; Uemoto, Yasuhiro; Wu, Yifeng
Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers
IEEE Electron Device Letters, v. 38, (8), August 2017, article number 7955040, p. 1075-1078
Liu, Shaofei; Wang, Maojun; Tao, Ming; Yin, Ruiyuan; Gao, Jingnan; Sun, Haozhe; Lin, Wei; Wen, Cheng P.; Wang, Jinyan; Wu, Wengang; Hao, Yilong; Zhang, Zhaofu; Chen, Jing; Shen, Bo
Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices
IEEE Transactions on Electron Devices, v. 64, (12), December 2017, article number 8093740, p. 5048-5056
Yang, Shu; Zhou, Chunhua; Han, Shaowen; Wei, Jin; Sheng, Kuang; Chen, Jing
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations
IEEE Transactions on Power Electronics, v. 32, (7), July 2017, article number 7570254, p. 5539-5549
Wang, Hanxing; Wei, Jin; Xie, Ruiliang; Liu, Cheng; Tang, Gaofei; Chen, Jing
Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer
IEEE Electron Device Letters, v. 38, (7), July 2017, article number 7932959, p. 929-932
Hua, Mengyuan; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Qian, Qingkai; Cai, Xiangbin; Wang, Ning; Chen, Jing
Remote N₂ Plasma Treatment to Deposit Ultrathin High-k Dielectric As Tunneling Contact Layer for Single-layer MoS₂ MOSFET
Applied Physics Express, v. 10, (12), December 2017, article number 125201
Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Wei, Jin; Chen, Jing
Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy
IEEE Transactions on Electron Devices, v. 64, (10), October 2017, p. 4036-4043
Zhang, Zhaofu; Li, Baikui; Qian, Qingkai; Tang, Xi; Hua, Mengyuan; Huang, Baoling; Chen, Kevin J.
SiC Trench MOSFET with Self-biased p-shield for Low R_ON-SP and Low OFF-state Oxide Field
IET Power Electronnics, v. 10, (10), 18 August 2017, p. 1208-1213
Zhang, Meng; Wei, Jin; Jiang, Huaping; Chen, Jing; Cheng, Ching Hsiang
Trapping Mechanisms in Insulated-Gate GaN Power Devices: Understanding and Characterization Techniques
Physica Status Solidi (A) Applications and Materials Science, v. 214, (3), March 2017, article number 1600607
Yang, Shu; Liu, Shenghou; Lu, Yunyou; Chen, Kevin J

Book chapter 2

Fluorine-Implanted Enhancement-Mode Transistors
Power GaN Devices: Materials, Applications and Reliability / Editors: Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni. Switzerland : Springer International Publishing, 2017, p. 273-293, Series: Power Electronics and Power Systems
Chen, Kevin Jing
Recent Progress in GaN-on-Si HEMT
Handbook of GaN Semiconductor Materials and Devices / Wengang (Wayne) Bi, Haochung (Henry) Kuo, Peicheng Ku, Bo Shen, editors. Boca Raton : CRC Press, 2017, p. 347-366, Book series: Optics and Optoelectronics
Chen, Kevin Jing; Shu, Yang

Conference paper 18

An Analytical Model for False Turn-on Evaluation of GaN Transistor in Bridge-Leg Configuration
ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings, February 2017, article number 7854840
Xie, Ruiliang; Wang, Hanxing; Tang, Gaofei; Yang, Xu; Chen, Kevin J.
Buffer Trapping-induced R_ON Degradation in GaN-on-Si Power Transistors: Role of Electron Injection From Si Substrate
Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, July 2017, article number 7988903, p. 101-104
Yang, Shu; Zhou, Chunhua; Han, Shaowen; Sheng, Kuang; Chen, Kevinjing
Characterization and analysis of dynamic RON of GaN-on-Si lateral power devices with grounded and floating Si substrate
12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, 24-28 July 2017
Tang, Gaofei; Wei, Jin; Zhang, Zhaofu; Tang, Xi; Hua, Mengyuan; Wang, Hanxing; Chen, Jing
Charge Storage Effect in SiC Trench MOSFET with a Floating p-shield and its Impact on Dynamic Performances
Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, article number 7988985, p. 387-390
Wei, Jin; Zhang, Meng; Jiang, Huaping; Wang, Hanxing; Chen, Jing
Comparison of E-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Stack
12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, 24-28 July 2017
He, Jiabei; Hua, Mengyuan; Tang, Gaofei; Zhang, Zhaofu; Chen, Kevin J.
Effective Cross-Plane Thermal Conductivity of GaN-on-Si (111) Epi-layers Evaluated by 3-Omega Technique
12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, 24-28 July 2017
Bao, Qilong; Li, yang; Zhang, Zhaofu; Qian, Qingkai; Lei, Jiacheng; Tang, Gaofei; Huang, Baoling; Chen, Kevin Jing
High-performance Fully-recessed Enhancement-mode GaN MIS-FETs with Crystalline Oxide Interlayer
Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, p. 89-92
Hua, Mengyuan; Zhang, Zhaofu; Qian, Qingkai; Wei, Jin; Bao, Qilong; Chen, Jing
High-speed Power MOSFET with Low Reverse Transfer Capacitance Using a Trench/planar Gate Architecture
Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, article number 7988956, p. 331-334
Wei, Jin; Wang, Yuru; Zhang, Meng; Jiang, Huaping; Chen, Jing
Impact of Substrate Termination on Dynamic Performance of GaN-on-Si Lateral Power Devices
Proceeding of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD 2017), 24 July 2017, article number 7988920, p. 235-238
Tang, Gaofei; Wei, Jin; Zhang, Zhaofu; Tang, Xi; Hua, Mengyuan; Wang, Hanxing; Chen, Jing
Integration of LPCVD-SiNx Gate Dielectric with Recessed-Gate E-Mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime
Technical Digest - International Electron Devices Meeting, IEDM, January 2017, article number 7838388, p. 10.4.1-10.4.4
Hua, Mengyuan; Zhang, Zhaofu; Wei, Jin; Lei, Jiacheng; Tang, Gaofei; Fu, Kai; Cai, Yong; Zhang, Baoshun; Chen, Jing
Low-Resistance Contact to Single-Layer MoS2 by Depositing Ultrathin High-k Dielectric with Remote N2 Plasma Treatment as Tunneling Layer
International Conference on Solid State Device and Materials (SSDM 2017), Sendai, Japan, 19-22 September 2017
Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Wei, Jin; Lei, Jiacheng; Chen, Jing
Maximizing the Performance of 650 v p-GaN Gate HEMTs: Dynamic Ron Characterization and Gate-Drive Design Considerations
ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings, February 2017, article number 7855231
Wang, Hanxing; Xie, Ruiliang; Liu, Cheng; Wei, Jin; Tang, Gaofei; Chen, Jing
Monolithic Intergration of E/D-Mode HEMTs for Logic Circuit on the p-GaN Gate Technology Platform
12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, 24-28 July 2017
Tang, Gaofei; Wang, Hanxing; Lei, Jiacheng; Chen, kevin jing
Nitridation of GaN Surface for Power Device Application: A First-Principles Study
Technical Digest - International Electron Devices Meeting, IEDM, January 2017, article number 7838552, p. 36.2.1-36.2.4
Zhang, Zhaofu; Li, Baikui; Tang, Xi; Qian, Qingkai; Hua, Mengyuan; Huang, Baoling; Chen, Kevin Jing
PBTI and NBTI of Fully-recessed E-mode LPCVD-SiNx/GaN MIS-FETs with PECVD-SiNx Interfacial Protection Layer
12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, 24-28 July 2017
Hua, Mengyuan; Qian, Qingkai; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing
Role of Shallow Surface Traps and Polarization Charges in Nitride-based Passivation for AlGaN/GaN Heterojunction FET
2016 International Forum on Wide Bandgap Semiconductors China, IFWS 2016 - Conference Proceedings, January 2017, article number 7803763, p. 85-88
Yang, Song; Tang, Zhikai; Lu, Yunyou; Jiang, Qimeng; Zhang, Anping; Chen, Kevin J
Switching Transient Analysis for Normally-off GaN Transistors With p-GaN Gate in a Phase-leg Circuit
2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017, v. 2017-January, November 2017, article number 8095810, p. 399-404
Xie, Ruiliang; Xu, Guangzhao; Yang, Xu; Wang, Hanxing; Tian, Mofan; Tian, Yidong; Zhang, Feng; Chen, Wenjie; Wang, Laili; Chen, Jing
TDDB and PBTI Characterizations of Fully-recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack
CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, 2017
Hua, Mengyuan; Qian, Qingkai; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing


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Article 13

Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors with Photonic-Ohmic Drain
IEEE Transactions on Electron Devices, v. 63, (7), July 2016, Article number 7478098, p. 2831-2837
Tang, Xi; Li, Baikui; Zhang, Zhaofu; Tang, Gaofei; Wei, Jin; Chen, Jing
Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
IEEE Electron Device Letters, v. 37, (3), March 2016, article number 7386610, p. 265-268
Hua, Mengyuan; Lu, Yunyou; Liu, Shenghou; Liu, Cheng; Fu, Kai; Cai, Yong; Zhang, Baoshun; Chen, Kevin J.
Dynamic Gate Stress-induced VTH Shift and its Impact on Dynamic RON in GaN MIS-HEMTs
IEEE Electron Device Letters, v. 37, (2), February 2016, article number 7347343, p. 157-160
Yang, Shihe; Lu, Yunyou; Wang, Hanxing; Liu, Shenghou; Liu, Cheng; Chen, Kevin J.
Gate stack engineering for GaN lateral power transistors
Semiconductor Science and Technology, v. 31, (2), February 2016, article number 024001
Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Chen, Kevin Jing
High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
IEEE Electron Device Letters, v. 37, (12), December 2016, article number 7590090, p. 1617-1620
Huang, Sen; Liu, Xinyu; Wang, Xinhua; Kang, Xuanwu; Zhang, Jinhan; Bao, Qilong; Wei, Ke; Zheng, Yingkui; Zhao, Chao; Gao, Hongwei; Sun, Qian; Zhang, Zhaofu; Chen, Kevin J.
Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
Scientific Reports, v. 6, June 2016, article number 27676
Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J.
Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges
IEEE Electron Device Letters, v. 37, (11), November 2016, article number 7567511, p. 1458-1461
Wei, Jin; Zhang, Meng; Jiang, Huaping; Cheng, Ching-Hsiang; Chen, Jing
On-Chip Addressable Schottky-On-Heterojunction Light-Emitting Diode Arrays On AlGaN/GaN-On-Si Platform
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 13, (5-6), May 2016, p. 365-368
Tang, Xi; Li, Baikui; Lu, Yunyou; Chen, Jing
Optoelectronic devices on AlGaN/GaN HEMT platform
Physica Status Solidi (A) Applications and Materials Science, v. 213, (5), May 2016, p. 1213-1221
Li, Baikui; Tang, Xi; Wang, Jiannong; Chen, Jing
Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications
IEEE Transactions on Electron Devices, v. 63, (6), June 2016, article number 7466844, p. 2469-2473
Wei, Jin; Jiang, Huaping; Jiang, Qimeng; Chen, Jing
Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform
IEEE Photonics Technology Letters, v. 28, (24), December 2016, article number 7725988, p. 2803-2806
Li, Baikui; Tang, Xi; Tang, Gaofei; Wei, Jin; Wang, Jiannong; Chen, Jing
Toward Reliable MIS- and MOS-gate Structures for GaN Lateral Power Devices
Physica Status Solidi (A) Applications and Materials Science, v. 213, (4), April 2016, p. 861-867
Chen, Kevin J.; Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan
面向高性能GaN基功率電子的器件物理研究
中國科學:物理學 力學 天文學=Scientia Sinica: Physica, Mechanica et Astronomica, v. 46, (10), July 2016, article number 107307, p. 91-106
黃森; 楊樹; 唐智凱; 化夢媛; 王鑫華; 魏珂; 魏珂; 包琦龍; 劉新宇; 陳敬

Conference paper 10

Comparison of SiN_x and AlN Passivations for AlGaN/GaN HEMTs
229th ECS Meeting, San Diego, CA, 29 May - 2 June, 2016
Yang, Song; Lei, Lei; Yu, Kun; Zhang, Anping; Chen, Kevin J.
Compatibility of AlN/SiNx Passivation with High-Temperature Process
CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology, 2016, p. 233-236
Hua, Mengyuan; Lu, Yunyou; Liu, Shenghou; Liu, Cheng; Fu, Kai; Cai, Yong; Zhang, Baoshun; Chen, Kevin J.
Critical Heterostructure Design for Low On-Resistance Normally-Off Double-Channel MOS-HEMT
28th International Conference on Indium Phosphide & Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, Japan, 26-30 June 2016
Wei, Jin; Liu, Shenghou; Li, Baikui; Tang, Xi; Tang, Gaofei; Zhang, Zhaofu; Chen, Jing
Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
Technical Digest - International Electron Devices Meeting, IEDM, 2016-February, February 2016 , article number 7409662, p. 9.4.1-9.4.4
Wei, Jin; Liu, Shenghou; Li, Baikui; Tang, Xi; Zhang, Zhaofu; Tang, Gaofei; Liu, Cheng; Lu, Yunyou; Hua, Mengyuan; Chen, Jing
Enhancing dynamic performance of GaN-on-Si power devices with on-chip photon pumping
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, July 2017, article number 7998839, p. 61-64
Li, Baikui; Tang, Xi; Wang, Jiannong; Chen, Kevin J
First-Principles Study of GaN Surface Electronic Structures with Ga, O or N Adatom
47th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, 8-10 December 2016
Zhang, Zhaofu; Li, Baikui; Tang, Xi; Qian, Qingkai; Hua, Mengyuan; Lei, Jiacheng; Huang, Baoling; Chen, Kevin Jing
Impact of Integrated Photonic-Ohmic Drain on Static and Dynamic Characteristics of GaN-on-Si Heterojunction Power Transistors
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520770, p. 31-34
Tang, Xi; Li, Baikui; Wang, Hanxing; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Chen, Jing
Impact of V-TH Shift on R-ON in E/D-mode GaN-on-Si Power Transistors: Role of Dynamic Stress and Gate Overdrive
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520828, p. 263-266
Yang, Shu; Lu, Yunyou; Liu, Shenghou; Wang, Hanxing; Liu, Cheng; Chen, Kevin J
Performance Enhancement and Characterization Techniques for GaN Power Devices
28th International Conference on Indium Phosphide & Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), June 26-30, 2016
Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Longobardi, Giorgia; Udrea, Florin; Chen, Kevin J
Proposal of a Novel GaN/SiC Hybrid FET (HyFET) with Enhanced Performance for High-Voltage Switching Applications
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520787, p. 99-102
Wei, Jin; Jiang, Huaping; Jiang, Qimeng; Chen, Jing


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Article 16

A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters
IEEE Transactions on Electron Devices, v. 62, (4), April 2015, article number 7039245, p. 1143-1149
Wang, Han Xing; Kwan, Alex Man Ho; Jiang, Qimeng; Chen, Kevin Jing
AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
IEEE Transactions on Electron Devices, v. 62, (6), June 2015, article number 7103310, p. 1870-1878
Yang, Shu; Liu, Shenghou; Lu, Yunyou; Liu, Cheng; Chen, Kevin Jing
An Analytical Study of Power Delivery Systems for Many-Core Processors Using On-Chip and Off-Chip Voltage Regulators
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, v. 34, (9), September 2015, article number 7061385, p. 1401-1414
Wang, Xuan; Xu, Jiang; Wang, Zhe; Chen, Kevin J.; Wu, Xiaowen; Wang, Zhehui; Yang, Peng; Duong, Luan Huu Kinh
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
IEEE Transactions on Electron Devices, v. 62, (10), October 2015, article number 7234887, p. 3215-3222
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen,Jing Kevin
Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
Applied Physics Express, v. 8, (6), June 2015, article number 064101
Lu, Yunyou; Jiang, Qimeng; Tang, Zhikai; Yang, Shu; Liu, Cheng; Chen, Kevin Jing
Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High Electron Mobility Transistors under Hard Switching Operation
IEEE Electron Device Letters, v. 36, (8), August 2015, p. 760-762
Wang, Hanxing; Liu, Cheng; Jiang, Qimeng; Tang, Zhikai; Chen, Kevin J.
GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN_x as Gate Dielectric
IEEE Electron Device Letters, v. 36, (5), May 2015, article number 7055356, p. 448-450
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen, Kevin Jing
High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique
IEEE Electron Device Letters, v. 36, (8), August 2015, article number 7123580, p. 754-756
Huang, Sen; Liu, Xinyu; Zhang, Jinhan; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Zheng, Yingkui; Liu, Honggang; Jin, Zhi; Zhao, Chao; Liu, Cheng; Liu, Shenghou; Yang, Shu; Zhang, Jincheng; Hao, Yue; Chen, Kevin Jing
Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer
Applied Physics Letters, v. 106, (5), February 2015, article number 051605
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Shen, Bo; Chen, Kevin Jing
Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor
IEEE Electron Device Letters, v. 36, (12), December 2015, article number 7295542, p. 1287-1290
Wei, Jin; Liu, Shenghou; Li, Baikui; Tang, Xi; Lu, Yunyou; Liu, Cheng; Hua, Mengyuan; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing
Normally OFF Al₂O₃-AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation
IEEE Transactions on Electron Devices, v. 62, (3), Mar 2015, article number 7015556, p. 821-827
Lu, Yunyou; Li, Baikui; Tang, Xi; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin J.
O-3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors
Applied Physics Letters, v. 106, (3), January 2015, article number 033507
Huang, Sen; Liu, Xinyu; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Sun, Bing; Yang, Xuelin; Shen, Bo; Liu, Cheng; Liu, Shenghou; Hua, Mengyuan; Yang, Shu; Chen,Jing Kevin
Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode
Applied Physics Letters, v. 106, (9), March 2015, article number 093505
Li, Baikui; Tang, Xi; Chen, Kevin J.
Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment
IEEE Electron Device Letters, v. 36, (8), August 2015, article number 7123614, p. 757-759
Lin, Shuxun; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Yu, Min; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Huang, Sen; Chen, Kevin Jing; Shen, Bo
Temperature Dependence of the Surface-and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate
IEEE Transactions on Electron Devices, v. 62, (8), August 2015, article number 7154486, p. 2475-2480
Zhang, Chuan; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing; Shen, Bo
Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier
IEEE Electron Device Letters, v. 36, (4), April 2015, article number 7042345, p. 318-320
Liu, Cheng; Yang, Shu; Liu, Shenghou; Tang, Zhikai; Wang, Hanxing; Jiang, Qimeng; Chen, Kevin J.

Conference paper 20

650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2015-June, June 2015 , article number 7123434, p. 241-244
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Lu, Yunyou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen, Kevin J.
Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs using Schottky-on-Heterojunction Light Emitting Devices
2015 Compound Semiconductor Week (CSW 2015), University of California Santa Barbara, CA, USA, 28 June - 2 July 2015
Tang, Xi; Li, Baikui; Chen, Kevin J.
Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs Using Schottky-on-Heterojunction Light-Emitting Devices
42th International Symposium on Compound Semiconductors (ISCS 2015), Santa Barbara, CA, USA, 28 June - 2 July 2015
Tang, Xi; Li, Baikui; Chen, Kevin J.
Differences between SiNx and AlN passivations for AlGaN/GaN HEMTs: a TCAD-simulation based study
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Yang, Song; Tang, Zhikai; Lu, Yunyou; Zhang, Anping; Chen, Kevin J.
First Demonstration of 0.27-Ω 600-V/10-A GaN-on-Si Power MIS-HEMTs in a 200-mm Hybrid CMOS-/Au-Compatible Process Line
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Yuan, Li; Xiao, Xia; Tang, Longjuan; Li, Huahua; Jiang, Yuanqi; Chen, Kevin J.; Yen, Allen
Gate Leakage and Time-Dependent Dielectric Breakdown Characteristics of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs
11th International Conference on Nitride Semiconductors, Beijing, China, September 2015
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen, Kevin Jing
Hard Switching Characteristics of AlN-Passivated AlGaN/GaN on silicon MIS-HEMTs
11th International Conference on Nitride Semiconductors, Beijing, China, 30 August - 4 September 2015
Wang, Hanxing; Liu, Cheng; Jiang, Qimeng; Tang, Zhikai; Chen, Kevin J.
High-performance gate-recessed normally-off GaN MIS-HEMTs with thin barrier layer
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Liu, Shenghou; Yang, Shu; Liu, Cheng; Lu, Yunyou; Chen, Kevin J.
III-nitride Transistors with Photonic-ohmic Drain for Enhanced Dynamic Performances
2015 IEEE International Electron Devices Meeting (IEDM), The Institute of Electrical and Electronics Engineers, 2015, p. 3531-3534
Tang, Xi; Li, Baikui; Lu, Yunyou; Wang, Hanxing; Liu, Cheng; Wei, Jin; Chen, Jing
Improved high-voltage performance of normally-OFF GaN MIS-HEMTs using fluorine-implanted enhanced back barrier
11th International Conference on Nitride Semiconductors, Beijing, China, 30 August - 4 September 2015
Liu, Cheng; Wei, Jin; Liu, Shenghou; Wang, Hanxing; Tang, Zhikai; Yang, Shu; Chen, Jing
Improved Thermal Stabilities in Normally-Off GaN MIS-HEMTs
2015 CS ManTech Digest, 2015, p. 159-162
Liu, Cheng; Wang, Hanxing; Yang, Shu; Lu, Yunyou; Liu, Shenghou; Tang, Zhikai; Jiang, Qimeng; Chen, Jing Kevin
Nitridation Interfacial-layer Technology for Enhanced Stability in GaN-based Power Devices
RFIT 2015 Proceedings, IEEE Microwave Theory and Techniques Society (IEEE MTT-S), 2015, p. 220-222
Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin J
Normally-off GaN MIS-HEMT with Improved Thermal Stability in DC and Dynamic Performance
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 213-216
Liu, Cheng; Wang, Hanxing; Yang, Shu; Lu, Yunyou; Liu, Shenghou; Tang, Zhikai; Jiang, Qimeng; Huang, Sen; Chen, Kevin Jing
On-Chip Addressable Schottky-On-Heterojunction Light-Emitting Diode Arrays On AlGaN/GaN-On-Si Platform
11th International Conference on Nitride Semiconductors, Beijing, China, 30 August - 4 September 2015
Tang, Xi; Li, Baikui; Lu, Yunyou; Chen, Kevin J.
On-chip Optical Pumping of Deep Traps in AlGaN/GaN-on-Si Power HEMTs
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers ( IEEE ), 2015, p. 201-204
Tang, Xi; Li, Baikui; Chen, Kevin Jing
Reduction of the Current Collapse in GaN High Electron Mobility Transistors by a Novel Surface Treatment
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Lin, Shuxun; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Yu, Min; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Shen, Bo; Chen, Kevin J.
Schottky-on-Heterojunction Optoelectronic Functional Devices Realized on AlGaN / GaN-on-Si Platform
International Electron Devices Meeting, IEDM, v. 2015, February 2015, article number 113077
Li, Baikui; Tang, Xi; Jiang, Qimeng; Lu, Yunyou; Wang, Hanxing; Wang, Jiannong; Chen, Kevin Jing
Suppressed Substrate-Coupled Cross-Talk under AC High-Voltage Switching on the AlGaN/GaN-on-Si Smart Power IC Platform
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September, 2015
Tang, Xi; Jiang, Qimeng; Wang, Hanxing; Li, Baikui; Chen, Kevin J.
Technology Challenges of GaN Heterojunction Power Devices
The 7th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2015), Seoul, Korea, 17-20 May 2015
Chen, Kevin J.
Toward reliable MIS- and MOS-gate structures for GaN power devices
42nd Int. Symp. on Compound Semiconductors (ISCS), Santa Barbara, USA, 28 June - 2 July 2015
Chen, Kevin J.; Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Tang, Zhikai


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Article 15

900 V/1.6 mΩ · cm2 normally off Al 2O3/GaN MOSFET on silicon substrate
IEEE Transactions on Electron Devices, v. 61, (6), 2014, article number 6807793, p. 2035-2040
Wang, Maojun; Wang, Ye; Zhang, Chuan; Xie, Bing; Wen, Cheng; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing; Shen, Bo
A Highly Linear Integrated Temperature Sensor on a GaN Smart Power IC Platform
IEEE Transactions on Electron Devices, v. 61, (8), 2014, article number 6832561, p. 2970-2976
Kwan, Alex Man Ho; Guan, Yue; Liu, Xiaosen; Chen, Kevin Jing
A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, v. 61, (3), 2014, article number 6722951, p. 762-768
Jiang, Qimeng; Tang, Zhikai; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing
Al2O3/AlN/GaN MOS-channel-HEMTs with an AlN interfacial layer
IEEE Electron Device Letters, v. 35, (7), 2014, article number 6823096, p. 723-725
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin Jing
AlN/GaN Heteostructure TFTs with Plasma Enhanced Atomic Layer Deposition of Epitaxial AlN Thin Film
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 953-956
Liu, Cheng; Liu, Shenghou; Huang, Sen; Li, Baikui; Chen, Kevin Jing
Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components
IEEE Transactions on Electron Devices, v. 61, (3), 2014, article number 6716042, p. 755-761
Zhang, Aixi; Zhang, Lining; Tang, Zhikai; Cheng, Xiaoxu; Wang, Yan; Chen, Kevin Jing; Chan, Man Sun
GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 949-952
Yang, Shu; Jiang, Qimeng; Li, Baikui; Tang, Zhikai; Chen, Kevin Jing
High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications
Solid-State Electronics, v. 91, 2014, p. 19-23
Zhou, Qi; Yang, Shu; Chen, Wanjun; Zhang, Bo; Feng, Zhihong; Cai, Shujun; Chen, Kevin J.
High-fMAX high Johnson's figure-of-merit 0.2-μ m gate algan/gan HEMTs on silicon substrate with AlN}/SiNx passivation
IEEE Electron Device Letters, v. 35, (3), 2014, article number 6710223, p. 315-317
Huang, Sen; Wei, Ke; Liu, Guoguo; Zheng, Yingkui; Wang, Xinhua; Pang, Lei; Kong, Xin; Liu, Xinyu; Tang, Zhikai; Yang, Shu; Jiang, Q.; Chen, Kevin Jing
Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs
IEEE Transactions on Electron Devices, v. 61, (8), August 2014, article number 6851170, p. 2785-2792
Tang, Zhikai; Huang, Sen; Tang, Xi; Li, Baikui; Chen, Kevin Jing
Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement
Applied Physics Letters, v. 104, (1), January 2014, article number 013504
Yang, Shu; Zhou, Chunhua; Jiang, Qimeng; Lu, Jianbiao; Huang, Baoling; Chen, Kevin Jing
Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors
Applied Physics Letters, v. 105, (22), December 2014, article number 223508
Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing
P-doping-free III-nitride high electron mobility light-emitting diodes and transistors
Applied Physics Letters, v. 105, (3), July 2014, article number 032105
Li, Baikui; Tang, Xi; Wang, Jiannong; Chen, Kevin Jing
Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform
IEEE Transactions on Electron Devices, v. 61, (11), November 2014, article number 6902778, p. 3808-3813
Jiang, Qimeng; Tang, Zhikai; Zhou, Chunhua; Yang, Shu; Chen, Kevin Jing
Technology for III-N heterogeneous mixed-signal electronics
Physica Status Solidi (A) Applications and Materials Science, v. 211, (4), 2014, p. 769-774
Chen, Kevin Jing; Kwan, Alex Man Ho; Jiang, Qimeng

Conference paper 13

A GaN pulse width modulation integrated circuit
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2014, 2014, article number 6856068, p. 430-433
Wang, Hanxing; Ho, Alex Man Kwan; Jiang, Qimeng; Chen, Kevin Jing
Analytical Modeling for AlGaN/GaN HEMTs
11th International Workshop on Compact Modeling (IWCM 14), Suntec Singapore Convention and Exhibition Centre, 23 January 2014
Zhang, Aixi; Zhang, Lining; Tang, Zhikai; Cheng, Xiaoxu; Wang, Yan; Chen, Kevin Jing; Chan, Man Sun
Characterizing Power Delivery Systems with On/Off-chip Voltage Regulators for Many-core Processors
Proceedings -Design, Automation and Test in Europe, DATE, April 2014, article number 6800261
Wang, Xuan; Xu, Jiang; Wang, Zhe; Chen, Kevin Jing; Wu, Xiaowen; Wang, Zhehui
Dielectric/III-N interfaces with nitridation interfacial-layer for GaN power electronics
45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, USA, 10-13 December 2014
Chen, Kevin Jing; Yang, Shu; Tang, Zhikai; Huang, Sen
High-temperature Low-damage Gate Recess Technique and Ozone-assisted ALD-grown Al₂O₃ Gate Dielectric for High-performance Normally-off GaN MIS-HEMTs
2014 IEEE International Electron Devices Meeting, v. 2015-February, (February), February 2015, article number 7047071, p. 17.4.1-17.4.4
Huang, Sen; Jiang, Qimeng; Wei, Ke; Liu, Guoguo; Zhang, Jinhan; Wang, Xinhua; Zheng, Yingkui; Sun, Bing; Zhao, Chaorong; Liu, Honggang; Jin, Zhi; Liu, Xinyu; Wang, Hongyue; Liu, Shenghou; Lu, Yunyou; Liu, Cheng; Yang, Shu; Tang, Zhikai; Zhang, Jincheng; Hao, Yue; Chen, Jing
Interface Characterization of Normally-Off Al2O3/AlN/GaN MOS-Channel-HEMTs with an AlN Interfacial Layer
8th International Workshop on Nitride Semiconductors (IWN2014), Wroc?aw, Poland, 24-29 August 2014
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin Jing
Investigation of gate degradation in Al2O3-AlGaN/GaN MIS-HEMTs using transparent gate electrode
8th International Workshop on Nitride Semiconductors (IWN 2014), Wroc?aw, Poland, 24-29 August 2014
Lu, Yunyou; Li, Baikui; Tang, Xi; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin Jing
Nitridation Interfacial-layer Technology: Enabling Low Interface Trap Density and High Stability in III-nitride MIS-HEMTs
Proceedings - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), January 2014, article number 7021325
Yang, Shu; Chen, Kevin Jing
Normally-off Hybrid Al₂O₃/GaN MOSFET on Silicon Substrate Based on Wet-etching
Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC's, Institute of Electrical and Electronics Engineers (IEEE), 2014, p. 253-256
Wang, M.; Wang, Y.; Zhang, C.; Wen, C.P.; Wang, J.; Hao, Y.; Wu, W.; Shen, B.; Chen, K.J.
Performance Enhancement of Normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN Interfacial Layer
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2014, article number 6856051, p. 362-365
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin Jing
Stability and Temperature Dependence of Dynamic RON in AlN-passivated AlGaN/GaN HEMT on Si Substrate
CS MANTECH 2014 - 2014 International Conference on Compound Semiconductor Manufacturing Technology 2014, GaAs Mantech, Incorporated, 2014, p. 97-100
Tang, Zhikai; Huang, Sen; Chen, Kevin Jing
Surface Nitridation for Improved Dielectric/III?Nitride Interfaces in GaN MIS?HEMTs
Physica Status Solidi (A) Applications and Materials Science, v. 212, (5), May 2015, p. 1059-1065
Chen, Kevin J; Yang, Shu; Tang, Zhikai; Huang, Sen; Lu, Yunyou; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Li, Baikui
Thermally Induced Threshold Voltage Instability of III-nitride MIS-HEMTs and MOSC-HEMTs: Underlying Mechanisms and Optimization Schemes
2014 IEEE International Electron Devices Meeting (IEDM 2014), Institute of Electrical and Electronics Engineers (IEEE), 2014, p. 17.2.1-17.2.4
Yang, Shu; Liu, Shenghou; Liu, Cheng; Tang, Zhikai; Lu, Yunyou; Chen, Kevin Jing


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Article 24

1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform
IEEE Electron Device Letters, v. 34, (3), 2013, article number 6410335, p. 357-359
Jiang, Qimeng; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing
5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing
Electronics Letters, v. 49, (3), January 2013, p. 221-222
Dong, Zhihua; Tan, Shuxin; Cai, Yong; Chen, Hongwei; Liu, Shenghou; Xu, Jicheng; Xue, Lu; Yu, Guohao; Wang, Yue; Zhao, Desheng; Hou, Keyu; Chen, Kevin J.; Zhang, Baoshun
600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
IEEE Electron Device Letters, v. 34, (11), 2013, article number 6601638, p. 1373-1375
Tang, Zhikai; Jiang, Qimeng; Lu, Yunyou; Huang, Sen; Yang, Shu; Tang, Xi; Chen, Kevin Jing
A dominant-negative mutation of HSF2 associated with idiopathic azoospermia
Human genetics, v. 132, (2), February 2013, p. 159-165
Mou, Lisha; Wang, Yadong; Li, Honggang; Huang, Yi; Jiang, Tao; Huang, Weiren; Li, Zesong; Chen, Jing; Xie, Jun; Liu, Yuchen; Jiang, Zhimao; Li, Xianxin; Ye, Jiongxian; Cai, Zhiming; Gui, Yaoting
A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs
IEEE Electron Device Letters, v. 34, (1), 2013, article number 6365744, p. 30-32
Kwan, Alex Man Ho; Chen, Kevin Jing
AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process
Japanese Journal of Applied Physics, v. 52, (4 PART 2), April 2013, article number 04CF06
Liu, Xinke; Zhan, Chunlei; Chan, Kwok Wai; Owen, Man Hon Samuel; Liu, Wei; Chi, Dong Zhi; Tan, Leng Seow; Chen, Kevin Jing; Yeo, Yee-Chia
AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
Semiconductor Science and Technology, v. 28, (7), July 2013, article number 074015
Chen, Kevin Jing; Huang, Sen
Characterization of VT-instability in enhancement-mode Al₂O₃-AlGaN/GaN MIS-HEMTs
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 10, (11), November 2013, p. 1397-1400
Lu, Yunyou; Yang, Shu; Jiang, Qimeng; Tang, Zhikai; Li, Baikui; Chen, Kevin Jing
Device Technology for GaN Mixed-Signal Integrated Circuits
Japanese Journal of Applied Physics, v. 52, (11S), November 2013, article number 11NH05
Chen, Kevin J.; Kwan, Alex Man Ho
Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
Journal of Applied Physics, v. 114, (14), October 2013, article number 144509
Huang, Sen; Wei, Ke; Tang, Zhikai; Yang, Shu; Liu, Cheng; Guo, Lei; Shen, Bo; Zhang, Jinhan; Kong, Xin; Liu, Guoguo; Zheng, Yingkui; Liu, Xinyu; Chen, Kevin Jing
Enhancement-Mode LaLuO3-AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation
Japanese Journal of Applied Physics, v. 52, (8 PART 2), August 2013, article number 08JN02
Yang, Shu; Huang, Sen; Schnee, Michael; Zhao, Qing-Tai; Schubert, Juergen; Chen, Kevin J.
Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, v. 60, (10), 2013, article number 6605590, p. 3040-3046
Yang, Shu; Huang, Sen; Schnee, Michael; Zhao, Qing-Tai; Schubert, Juergen; Chen, Kevin Jing
Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs
Journal of Semiconductors, v. 34, (2), February 2013, article number 024003
Chen, W.; Zhang, J.; Zhang, B.; Chen, K.J.
Genome-wide analysis of microRNAs expression profiling in patients with primary IgA nephropathy
Genome, v. 56, (3), March 2013, p. 161-169
Tan, Kuibi; Chen, Jing; Li, Wuxian; Chen, Yuyu; Sui, Weiguo; Zhang, Yang; Dai, Yong
High sensitivity AlGaN/GaN lateral fieldeffect rectifier for zero-bias microwave detection
Electronics Letters, v. 49, (22), October 2013, p. 1391-1393
Zhou, Qi; Chen, Wanjun; Zhou, Chunhua; Zhang, Bo; Chen, Kevin Jing
High-performance normally-Off Al2O3 GaN MOSFET using a wet etching-based gate recess technique
IEEE Electron Device Letters, v. 34, (11), 2013, article number 6601679, p. 1370-1372
Wang, Ye; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing; Shen, Bo
High-Quality Interface in Al2O3/GaN/GaNAlGaNGaN MIS Structures with in Situ Pre-Gate Plasma Nitridation
IEEE Electron Device Letters, v. 34, (12), 2013, article number 6656897, p. 1497-1499
Yang, Shu; Tang, Zhikai; Wong, King-Yuen; Lin, Yu-Syuan; Liu, Cheng; Lu, Yunyou; Huang, Sen; Chen, Kevin Jing
High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs With AlN/SiNx Passivation
IEEE Electron Device Letters, v. 34, (3), 2013, article number 6410341, p. 366-368
Tang, Zhikai; Huang, Sen; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing
Integrated Over-Temperature Protection Circuit for GaN Smart Power ICs
Japanese Journal of Applied Physics, v. 52, (8 PART 2), August 2013, article number 08JN15
Kwan, Alex Man Ho; Guan, Yue; Liu, Xiaosen; Chen, Kevin J.
Investigation of device geometry- and temperature-dependent characteristics of AlGaN/GaN lateral field-effect rectifier
Semiconductor Science and Technology, v. 28, (1), January 2013, article number 015021
Chen, Wanjun; Zhang, Jing; Wang, Zhigang; Wei, Jin; Zhang, Bo; Chen, Jing
Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges
IEEE Electron Device Letters, v. 34, (2), 2013, article number 6403499, p. 193-195
Huang, Sen; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin Jing
Overexpression of Cyclooxygenase-1 Correlates with Poor Prognosis in Renal Cell Carcinoma
Asian Pacific journal of cancer prevention, v. 14, (6), 2013, p. 3729-3724
Yu, Zu-Hu; Zhang, Qiang; Wang, Ya-Dong; Chen, Jing; Jiang, Zhi-Mao; Shi, Min; Guo, Xin; Qin, Jie; Cui, Guang-Hui; Cai, Zhi-Ming; Gui, Yao-Ting; Lai, Yong-Qing
Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
IEEE Electron Device Letters, v. 34, (9), 2013, article number 6556961, p. 1106-1108
Liu, Cheng; Liu, Shenghou; Huang, Sen; Chen, Kevin Jing
Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement
IEEE Transactions on Electron Devices, v. 60, (3), 2013, article number 6449310, p. 1075-1081
Zhou, Qi; Chen, Wanjun; Liu, Shenghou; Zhang, Bo; Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing

Conference paper 16

600 V High-performance AlGaN/GaN HEMTs with AlN/SiN_x Passivation
2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2013), Boston, USA, 23-26 April 2013
Tang, Zhikai; Huang, Sen; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing
600V 1.3mμ·cm2 Low-leakage Low-current-collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2013, article number 6694478, p. 191-194
Tang, Zhikai; Huang, Edward Seng-jin; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing
AlN/GaN Heterostructure TFTs with the Polarized AlN Barrier Grown by 300 ^oC Plasma Enhanced Atomic Layer Epitaxy
10th Topical Workshop on Heterostructure Microelectronics (TWHM-10), Hakodate, Japan, 2-5 September 2013
Liu, Cheng; Liu, Shenghou; Huang, Sen; Li, Baikui; Chen,Jing Kevin
Degradation of Transient OFF-State Leakage Current in AlGaN/GaN HEMTs Induced by ON-State Gate Overdrive
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 928-931
Li, Baikui; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing
Device technology for GaN mixed-signal integrated circuits
Japanese Journal of Applied Physics, v. 52, (11 PART 2), November 2013, article number 11NH05
Chen, Kevin Jing
GaN Buffer Traps in GaN-on-Si Structure Studied by Thermally Stimulated Current and Back-gating Measurements
10th Int. Conf. on Nitride Semiconductors (ICNS-10), Washington DC, USA, 2013
Yang, Shu; Lu, Jianbiao; Huang, Sen; Zhou, Chunhua; Huang, Baoling; Chen, Kevin Jing
GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 949-952
Yang, Shu; Jiang, Qimeng; Li, Baikui; Tang, Zhikai; Chen, Kevin Jing
High Performance Normally-Off AlGaN/GaN MOSFET with Al2O3 High-k Dielectric Layer Using a Low Damage Recess Technique
10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, 25-30 August 2013
Wang, Ye; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing
High voltage InAlN/GaN HFETs achieved by schottky-contact technology for power applications
ECS Transactions, v. 58, (4), 2013, p. 351-363
Zhou, Qi; Chen, Wanjun; Liu, Shenghou; Zhang, Bo; Feng, Zhihong; Cai, Shujun; Chen, Kevin J.
High-Voltage Enhancement/Depletion-mode AlGaN/GaN HEMTs on Modified SOI Substrates
Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa, Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 407-410
Jiang, Qimeng; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing
Improved High-Temperature Stability of 2DEG Channel in AlGaN/GaN Heterostructures by PEALD-grown AlN Thin Film Passivation
10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, 25-30 August 2013
Huang, Sen; Wei, Ke; Liu, Xinyu; Liu, Guoguo; Shen, Bo; Chen, Kevin Jing
Mapping of Interface Traps in High-performance Al₂O ₃/AlGaN/GaN MIS-heterostructures Using Frequency- and Temperature-dependent C-V Techniques
Technical Digest - International Electron Devices Meeting, IEDM, 2013, article number 6724573, p. 6.3.1-6.3.4
Yang, Shu; Tang, Zhikai; Wong, King-Yuen; Lin, Yu-Syuan; Lu, Yunyou; Huang, Sen; Chen, Kevin Jing
Monolithically Integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and Their Applications in Low-standby-power Start-up Circuit for Switched-mode Power Supplies
2013 IEEE International Electron Devices Meeting (IEDM 2013), Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 156-159
Tang, Zhikai; Jiang, Qimeng; Huang, Sen; Lu, Yunyou; Yang, Shu; Liu, Cheng; Tang, Xi; Liu, Shenghou; Li, Baikui; Chen, Kevin Jing
Recent Development in Flourine-ion-implanted GaN-based Heterojunction Power Devices
1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings, 2013, article number 6695570, p. 92-95
Chen, Kevin Jing; Kwan, Man Ho; Tang, Zhikai
Technology for III-N Heterogeneous Mixed-signal Electronics
10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, 25-30 August 2013
Chen, Kevin Jing
Toward GaN-based Power Integrated Circuits
The 2nd International Conference on Advanced Electromaterials (ICAE 2013), Jeju, Korea, 12-15 November 2013
Chen, Kevin Jing


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Article 15

AlGaN/GaN MISHEMTs With High-kappa LaLuO3 Gate Dielectric
IEEE Electron Device Letters, v. 33, (7), July 2012, p. 979-981
Yang, Shu; Huang, Sen; Chen, Hongwei; Zhou, Chunhua; Zhou, Qi; Schnee, Michael; Zhao, Qing-Tai; Schubert, Juergen; Chen, Kevin Jing
AlGaN/GaN-on-Silicon Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800V and On-State Resistance of 3 m Omega.cm(2) Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process
Applied physics express, v. 5, (6), June 2012, article number 066501
Liu, Xinke; Zhan, Chunlei; Chan, Kwok Wai; Liu, Wei; Tan, Leng Seow; Chen, Kevin Jing; Yeo, Yee-Chia
Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layer
物理学报, v. 61, (24), 2012
Duan, Bao-Xing; Yang, Yin-Tang; Chen, Kevin J.
Characterization of V_th-instability in Al₂O₃/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement
Physica status solidi. C, Current topics in solid state physics, v. 9, (3-4), 2012, p. 923-926
Huang, Sen; Yang, Shu; Roberts, John; Chen, Kevin J.
Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film
IEEE Electron Device Letters, v. 33, (4), April 2012, p. 516-518
Huang, Sen; Jiang, Qimeng; Yang, Shu; Zhou, Chunhua; Chen, Kevin J.
Enhancement-mode operation of nanochannel array (NCA) AlGaN/GaN HEMTs
IEEE Electron Device Letters, v. 33, (3), 2012, p. 354-356
Liu, S.; Cai, Y.; Gu, G.; Wang, J.; Zeng, C.; Shi, W.; Feng, Z.; Qin, H.; Cheng, Z.; Chen, K.J.; Zhang, B.
Fe-doped InN layers grown by molecular beam epitaxy
Applied physics letters, v. 101, (17), October 2012
Wang, Xinqiang; Liu, Shitao; Ma, Dingyu; Zheng, Xiantong; Chen, Guang; Xu, Fujun; Tang, Ning; Shen, Bo; Zhang, Peng; Cao, Xingzhong; Wang, Baoyi; Huang, Sen; Chen, Kevin J.; Zhou, Shengqiang; Yoshikawa, Akihiko
F離子注入新型Al_0.25Ga_0.75N/GaN HEMT器件耐壓分析
物理学报=Acta Physica Sinica, v. 61, (22), 2012, p. 408-414
段寶興; 楊銀堂; 陳敬
High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy
Applied physics express, v. 5, (1), 2012, article number 015502
Wang, X.; Liu, S.; Ma, N.; Feng, L.; Chen, G.; Xu, F.; Tang, N.; Huang, S.; Chen, K.J.; Zhou, S.; Shen, B.
Low Dynamic ON-Resistance in AlGaN/GaN-on-Si Power HEMTs Obtained by AlN Thin Film Passivation
ECS transactions, v. 50, (3), 2012, p. 343-351
Chen, Kevin Jing; Huang, Sen; Jiang, Qimeng
Schottky source/drain InAlN/AlN/GaN MISHEMT with enhanced breakdown voltage
IEEE Electron Device Letters, v. 33, (1), 2012, p. 38-40
Zhou, Q.; Chen, H.; Zhou, C.; Feng, Z.H.; Cai, S.J.; Chen, K.J.
Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance
Japanese Journal of Applied Physics, v. 51, no. 4S, April 2012, Article no. 04DF02
Zhou, Qi; Chen, Hongwei; Zhou, Chunhua; Feng, Zhihong; Cai, Shujun; Chen, Kevin J.
Thermally activated pop-in and indentation size effects in GaN films
Journal of physics. D, Applied physics, v. 45, (8), 2012, article number 085301
Lu, Junyong; Ren, Hang; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi
UV-illuminated dielectrophoresis by two-dimensional electron gas (2DEG) in AlGaN/GaN heterojunction
Physica status solidi. A, Applications and materials science, v. 209, (11), November 2012, p. 2223-2228
Fu, Junxue; Luo, Yuan; Yobas, Levent; Chen, Kevin J.
Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices
IEEE Electron Device Letters, v. 33, (8), August 2012, p. 1132-1134
Zhou, Chunhua; Jiang, Qimeng; Huang, Sen; Chen, Kevin Jing

Conference paper 11

AlD-grown ultrathin AlN film for passivation of AlGaN/GaN HEMTs
27th Int. Conf. on Compound Semiconductor Manufacturing Technology (CS MANTECH), Boston, Massachusetts, USA, Apr 23-26 2012
Huang, Sen; Jiang, Qimeng; Yang, Shu; Zhou, Chunhua; Chen, Kevin J.
AlGaN/GaN Metal-2DEG Tunnel Junction FETs with Normally-off Operation, High On-State Current and Low Off-State Leakage
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012, p. 417-420
Chen, Kevin Jing; Yuan, Li; Chen, Hongwei
AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process
Proceedings of technical papers, 2012
Liu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S.; Teo, K.L.; Chen, K.J.; Yeo, Y.C.
AlGaN/GaN-on-Silicon MOS-HEMTs with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ.cm2 using a CMOS-Compatible Gold-Free Process
2012 Int. Symp. on VLSI Technology, Systems, and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr 23-25 2012
Liu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S.; Chen, Kevin J.; Yeo, Y.C.
Enhancement-mode AlGaN/GaN MISHEMTs with fluorinated high-κ LaLuO3 gate dielectric
Int. Workshop on Nitride Semiconductors (IWN2012), Sapporo, Japan, 2012
Yang, Shu; Huang, Sen; Zhao, Qing-Tai; Chen, Kevin Jing
Exploiting nanostructure-thin film interfaces in advanced sensor device configurations
Vacuum, v. 86, (6), 2012, p. 757-760
Jha, S.; Wang, H.E.; Kutsay, O.; Jelenkovi?, E.V.; Chen, K.J.; Bello, I.; Kremnican, V.; Zapien, J.A.
Fluorine Plasma Ion Implantation: a GaN Normally-off HEMT Technology
4th Int. Symp. On Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma2012), Aichi, Japan, Mar 4-8 2012
Chen, Kevin J.
Integrated Gate-protected HEMTs and Mixed-Signal Functional Blocks for GaN Smart Power ICs
2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), San Francisco, USA, December 10-12 2012
Kwan, Alex Man Ho; Liu, Xiaosen; Chen, Kevin J.
Mechanism of PEALD-grown AlN passivation of AlGaN/GaN HEMTs
Int. Workshop on Nitride Semiconductors (IWN2012), Sapporo, Japan, 2012
Huang, Sen; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin Jing
Normally-off AlGaN/GaN power tunnel-junction FETs
Physica status solidi. C, Current topics in solid state physics, v. 9, 2012, p. 871-874
Chen, Hongwei; Yuan, Li; Zhou, Qi; Zhou, Chunhua; Chen, Kevin J.
Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Structures
24th International Symposium on Power Semiconductor Devices and ICs, Bruges, Belgium, 2012, p. 245-248
Zhou, Chunhua; Jiang, Qimeng; Huang, Sen; Chen, Kevin Jing


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Article 18

A compact dual-band coupled-line balun with tapped open-ended stubs
Progress in electromagnetics research C. Pier C, v. 22, 2011, p. 109-122
Shao, J.; Zhang, H.; Chen, C.; Tan, S.; Chen, K.J.
Characterization of High-κ LaLuO₃ Thin Film Grown on AlGaN/GaN Heterostructure by Molecular Beam Deposition
Applied physics letters, v. 99, (18), October 2011, article number 182103
Yang, Shu; Huang, Sen; Chen, Hongwei; Schnee, Michael; Zhao, Qing-Tai; Schubert, Jurgen; Chen, Kevin Jing
Efficient Parameter Extraction of Microwave Coupled-Resonator Filter Using Genetic Algorithms
International journal of RF and microwave computer-aided engineering, v. 21, (2), March 2011, p. 137-144
Zhang, Hualiang; Bowman, Samuel; Chen, Kevin J.
Enhanced Electroluminescence from the Fluorine-plasma Implanted Ni/Au-AlGaN/GaN Schottky Diode
Applied Physics Letters, v. 99, (6), August 2011, article number 062101
Li, Baikui; Wang, Maojun; Chen, Kevinjing; Wang, Jiannong
Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology
Physica status solidi. A, Applications and materials science, v. 208, (2), February 2011, p. 434-438
Chen, Kevin J.; Zhou, Chunhua
Enhancement-Mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation with a Si(3)N(4) Energy-Absorbing Layer
Electrochemical and solid-state letters, v. 14, (6), 2011, p. H229-H231
Chen, Hongwei; Wang, Maojun; Chen, Kevin J.
Fabrication of GaN-based MEMS structures using dry-etch technique
纳米技术与精密工程=Nanotechnology and Precision Engineering, 9, 1, 2011
楊振川; 呂佳楠; 閆桂珍; 陳敬
GaN Single-Polarity Power Supply Bootstrapped Comparator for High-Temperature Electronics
IEEE electron device letters, v. 32, (1), January 2011, p. 27-29
Liu, Xiaosen; Chen, Kevin J.
Gate-Induced Schottky Barrier Lowering Effect in AlGaN/GaN Metal-2DEG Tunnel Junction Field Effect Transistor
IEEE electron device letters, v. 32, (9), September 2011, p. 1221-1223
Yuan, Li; Chen, Hongwei; Zhou, Qi; Zhou, Chunhua; Chen, Kevin J.
High-Gain and High-Bandwidth AlGaN/GaN High Electron Mobility Transistor Comparator with High-Temperature Operation
Japanese Journal of Applied Physics, v. 50, pt. 2, no. 4, April 2011, Article no. 04DF02
Kwan, Alex Man Ho; Wong, King Yuen; Liu, Xiaosen; Chen, Kevin J.
Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices, v. 58, (2), February 2011, article number 5658134, p. 460-465
Wang, Maojun; Chen, Jing
Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping
IEEE electron device letters, v. 32, (4), April 2011, p. 482-484
Wang, Maojun; Chen, Kevin J.
Microspheres manipulation system by patterned AlGaN/GaN 2DEG electrodes
Physica status solidi. C, Current topics in solid state physics, v. 8, (7-8), 2011, p. 2479-2482
Fu, J.; Chen, K.J.
Normally Off AlGaN/GaN Metal-2DEG Tunnel-Junction Field-Effect Transistors
IEEE electron device letters, v. 32, (3), March 2011, p. 303-305
Yuan, Li; Chen, Hongwei; Chen, Kevin J.
ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors
Journal of applied physics, v. 110, (11), December 2011
Ma, Chenyue; Chen, Hongwei; Zhou, Chunhua; Huang, Sen; Yuan, Li; Roberts, John; Chen, Kevin J.
Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
AIP Advances, v. 1, (3), 2011, article number 032132
Lu, Junyong; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi
Surface properties of AlxGa1-xN/GaN heterostructures treated by fluorine plasma: An XPS study
Physica status solidi. C, Current topics in solid state physics, v. 8, (7-8), 2011, p. 2200-2203
Huang, S.; Chen, H.; Chen, K.J.
Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors
Japanese Journal of Applied Physics, v. 50, no. 11R, 2011, Article no. 110202
Huang, Sen; Yang, Shu; Roberts, John; Chen, Kevin J.

Conference paper 10

A Novel Normally-off GaN Power Tunnel Junction FET
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, 2011, p. 276-279
Yuan, Li; Chen, Hongwei; Zhou, Qi; Zhou, Chunhua; Chen, Kevin J.
Characterization of AlGaN/GaN cantilevers fabricated with deep-release techniques
Key engineering materials, v. 483, 2011, p. 14-17
Lv, J.; Yang, Z.; Yan, G.; Cai, Y.; Zhang, B.; Chen, K.J.
Characterization of GaN cantilevers fabricated with GaN-on-silicon platform
Proceedings, IEEE micro electro mechanical systems, 2011, p. 388-391
Lv, J.N.; Yang, Z.C.; Yan, G.Z.; Cai, Y.; Zhang, B.S.; Chen, K.J.
Design of dual-band coupled-line balun
Final Program and Book of Abstracts - iWAT 2011: 2011 IEEE International Workshop on Antenna Technology: Small Antennas, Novel Structures and Innovative Metamaterials, 2011, p. 332-335
Zhang, H.; Shao, J.; Tan, S.; Chen, K.J.
Electroluminescence from the fluorine-plasma treated Ni/Au-AlGaN/GaN Schottky diode
AIP Conference Proceedings, v. 1399, (113), December 2011, p. 113-114
Li, Baikui; Wang, Maojun; Chen, Jing; Wang, Jiannong
Observation of Trap-Assisted Steep Sub-threshold Swing in Schottky Source/Drain Al2O3/InAlN/GaN MISHEMT
69th Device Research Conference (DRC), Santa Barbara, CA, USA, June 20-22, 2011
Zhou, Qi; Chen, Hongwei; Zhou, Chunhua; Feng, Zhihong; Cai, S.J.; Chen, Kevin J.
Physics of Fluorine Plasma Ion Implantation for GaN Normally-off HEMT Technology
IEEE International Electron Devices Meeting (IEDM), Washington, DC, December 5-7 2011
Chen, Kevinjing; Yuan, Li; Wang, Maojun; Chen, Hongwei; Huang, Sen; Zhou, Qi; Zhou, Chunhua; Li, Baikui; Wang, Jiannong
Schottky Source/Drain Al2O3/InAlN/GaN MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF Current Ratio
2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), Washington, DC, December 5-7 2011
Zhou, Qi; Huang, Sen; Chen, Hongwei; Zhou, Chunhua; Feng, Zhihong; Cai, Shujun; Chen, Kevin J.
Stealth Electrode Dielectrophoresis: Microspheres Manipulation by Patterned 2-Dimensional Electron Gas (2DEG) in AlGaN/GaN Heterostructures
ISMM 2011 in Conjunction with the KBCS Spring Meeting, Seoul, Korea, from June 2 to 4, 2011. Abstract: F3-056
Fu, Junxue; Yobas, Levent; Chen, Kevin J.
The role of fluorine ions in GaN heterojunction transistors: Applications and stability
Proceedings of SPIE--the international society for optical engineering, v. 7939, 2011
Chen, K.J.


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Article 15

18-GHz 3.65-W/mm enhancement-mode AlGaN/GaN HFET using fluorine plasma ion implantation
IEEE Electron Device Letters, v. 31, (12), 2010, p. 1386-1388
Feng, Z.H.; Zhou, R.; Xie, S.Y.; Yin, J.Y.; Fang, J.X.; Liu, B.; Zhou, W.; Chen, K.J.; Cai, S.J.
AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough Breakdown Immunity and Low On-Resistance
IEEE electron device letters, v. 31, (1), 2010, JAN, p. 5-7
Zhou, Chunhua; Chen, Wanjun; Piner, Edwin L.; Chen, Kevin J.
AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability
Electronics letters, v. 46, (6), 2010, MAR 18, p. 445-U92
Zhou, C.; Chen, W.; Piner, E.L.; Chen, K.J.
Characterization and analysis of the temperature-dependent on -resistance in AlGaN/GaN lateral field-effect rectifiers
IEEE Transactions on Electron Devices, v. 57, (8), 2010, p. 1924-1929
Wong, K.Y.; Chen, W.; Chen, K.J.
Determining phonon deformation potentials of hexagonal GaN with stress modulation
Journal of Applied Physics, v. 108, (12), 2010, article number 123520
Lu, Junyong; Wang, ZhiJia; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi
Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlxGa1-xN/GaN heterostructures
Applied physics letters, v. 96, (23), 2010, JUN 7
Huang, Sen; Chen, Hongwei; Chen, Kevin J.
GaN smart power IC technology
PHYSICA STATUS SOLIDI b-basic SOLID STATE PHYSICS, v. 247, (7), 2010, JUL, p. 1732-1734
Wong, King-Yuen; Chen, Wanjun; Liu, Xiaosen; Zhou, Chunhua; Chen, Kevin J.
High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance
Electronics letters, v. 46, (24), November 2010, p. 1626-1627
Chen, W.; Zhou, C.; Chen, K.J.
Integrated Nanorods and Heterostructure Field Effect Transistors for Gas Sensing
Journal OF PHYSICAL CHEMISTRY C, v. 114, (17), 2010, MAY 6, p. 7999-8004
Jha, Shrawan K.; Liu, Chao Ping; Chen, Zhen Hua; Chen, Kevin J.; Bello, Igor; Zapien, Juan A.; Zhang, Wenjun; Lee, Shuit-Tong
Integrated Voltage Reference Generator for GaN Smart Power Chip Technology
IEEE transactions on electron devices, v. 57, (4), 2010, APR, p. 952-955
Wong, King-Yuen; Chen, Wanjun; Chen, Kevin J.
Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 207, (6), 2010, JUN, p. 1332-1334
Wang, Maojun; Cheng, Chung Choi; Beling, Chris D.; Fung, Stevenson; Chen, Kevin J.
Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage
Electronics letters, v. 46, (18), 2010, SEP 2, p. 1280-U63
Chang, C.T.; Hsu, T.H.; Chang, E.Y.; Chen, Y.C.; Trinh, H.D.; Chen, K.J.
Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique
IEEE transactions on electron devices, v. 57, (7), 2010, JUL, p. 1492-1496
Wang, Maojun; Chen, Kevin J.
Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability
IEEE electron device letters, v. 31, (7), 2010, JUL, p. 668-670
Zhou, Chunhua; Chen, W.; Piner, Edwin L.; Chen, Kevin J.
Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode
IEEE microwave and wireless components letters, v. 20, (5), 2010, MAY, p. 277-279
Zhou, Qi; Wong, King-Yuen; Chen, Wanjun; Chen, Kevin J.

Conference paper 11

AlGaN/GaN dual-channel lateral field-effect rectifier with punchthrough breakdown immunity and low on-resistance
2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010, 2010
Zhou, Chunhua; Chen, Wanjun; Piner, Edwin L.; Chen, Kevin J.
Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: Evidence of Fermi level de-pinning at Ni/AlGaN interface
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 7, (7-8), July 2010, p. 1961-1963
Li, Baikui; Wang, Maojun; Chen, Jing; Wang, Jiannong
Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT Technology
The 37th Int. Symp. On Compound Semiconductors (ISCS2010), Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4, 2010
Chen, Kevin J.
Enhancement-mode AlGaN/GaN HEMTs fabricated by standard fluorine ion implantation
2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010, 2010
Chen, Hongwei; Wang, Maojun; Chen, Kevin J.
GaN smart discrete power devices
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2010, p. 1303-1306
Chen, K.J.; Zhou, C.
GaN Smart Power IC Technologies
IEEE University Government Industry Micro/Nano Symposium (UGIM 2010), Purdue University, West Lafayette, IN, USA, June 28-July 1, 2010
Chen, Kevin J.
Reliability of Enhancement-mode AlGaN/GaN HEMTs Under ON-State Gate Overdrive
2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, 2010
Ma, Chenyue; Chen, Hongwei; Zhou, Chunhua; Huang, Sen; Yuan, Li; Roberts, John; Chen, Kevin J.
Residual stress characterization of GaN microstructures using bent-beam strain sensors
2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, 2010, p. 138-140
Lv, J.; Yang, Z.; Yan, G.; Cai, Y.; Zhang, B.; Chen, K.J.
Self-aligned enhancement-mode AIGaN/GaN HEMTs using 25 ke V fluorine ion implantation
Device Research Conference - Conference Digest, DRC, 2010, p. 137-138
Chen, H.; Wang, M.; Chen, K.J.
Self-protected GaN power devices with reverse drain blocking and forward current limiting capabilities
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2010, p. 343-346
Zhou, C.; Chen, W.; Piner, E.L.; Chen, K.J.
Single-Polarity Power Supply Bootstrapped Comparator for GaN Smart Power Technology
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium, 2010
Liu, Xiaosen; Chen, Kevin J.


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Article 11

Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy
Applied physics letters, v. 94, (6), 2009, FEB 9
Wang, M.J.; Yuan, L.; Cheng, C.C.; Beling, C.D.; Chen, K.J.
Design of dual-band rat-race couplers
IET Microwaves Antennas & Propagation, v. 3, (3), 2009, APR, p. 514-521
Zhang, H.; Chen, K.J.
Diffusion mechanism and the thermal stability of fluorine ions in GaN after ion implantation
Journal of applied physics, v. 105, (8), 2009, APR 15
Wang, M.J.; Yuan, L.; Chen, K.J.; Xu, F.J.; Shen, B.
Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform
IEEE electron device letters, v. 30, (10), 2009, OCT, p. 1045-1047
Lv, Jianan; Yang, Zhenchuan; Yan, Guizhen; Lin, Wenkui; Cai, Yong; Zhang, Baoshun; Chen, Kevin J.
Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode
Applied physics letters, v. 95, (23), 2009, DEC 7, article number 232111
Li, Baikui; Wang, Maojun; Chen, Kevinjing; Wang, Jiannong
Microbridge tests on gallium nitride thin films
Journal of micromechanics and microengineering, v. 19, (9), September 2009, article number 095019
Huang, Haiyou; Li, ZhiYing; Lu, Junyong; Wang, Zhi-Jia; Wang, Chong-Shun; Lau, Kei May; Chen, Kevin Jing; Zhang, Tongyi
Silicon-on-Organic Integration of a 2.4-GHz VCO Using High-Q Copper Inductors and Solder-Bumped Flip Chip Technology
IEEE transactions on components and packaging technologies, v. 32, (1), 2009, MAR, p. 191-196
Huo, Xiao; Xiao, Guo-Wei; Chan, Philip C.H.; Chen, Kevin J.
Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT
IEEE electron device letters, v. 30, (5), 2009, MAY, p. 430-432
Chen, Wanjun; Wong, King-Yuen; Chen, Kevin J.
Study of diffusion and thermal stability of fluorine ions in GaN by Time-of-Flight Secondary Ion Mass Spectroscopy
Physica status solidi. C, Current topics in solid state physics, v. 6, (SUPPL. 2), 2009, p. S952-S955
Wang, M.; Yuan, L.; Xu, F.; Shen, B.; Chen, K.J.
Temperature dependence and thermal stability of planar-integrated enhancement/depletion-mode AlGan/GaN HEMTs and digital circuits
Solid-state electronics, v. 53, (1), 2009, JAN, p. 1-6
Wang, Ruonan; Cai, Yong; Chen, Kevin J.
Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications
IEEE transactions on electron devices, v. 56, (12), 2009, DEC, p. 2888-2894
Wong, King-Yuen; Chen, Wanjun; Zhou, Qi; Chen, Kevin J.

Conference paper 5

GaN smart power chip technology
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009, 2009, p. 403-407
Chen, K.J.
HEMT-compatible lateral field-effect rectifier using CF(4) plasma treatment
Physica status solidi C, Current topics in solid state physics, v. 6, (SUPPL. 2), 2009, p. S948-S951
Chen, Wanjun; Wong, King Yuen; Chen, Kevin J.
High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode
2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009, 2009
Zhou, Q.; Wong, K.Y.; Chen, W.; Chen, K.J.
Integrated voltage reference and comparator circuits for GaN smart power chip technology
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2009, p. 57-60
Wong, K.Y.; Chen, W.; Chen, K.J.
Wide bandgap GaN smart power chip technology
2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009, 2009
Wong, King Yuen; Chen, Wanjun; Chen, Kelvin J.


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Article 11

A second-order dual-band bandpass filter using a dual-band admittance inverter
Microwave and optical technology letters, v. 50, (5), 2008, MAY, p. 1184-1187
Zhang, Hualiang; Chen, Kevin J.
Compact broadband dual-band bandpass filters using slotted ground structures
Progress in Electromagnetics research-pier, v. 82, 2008, p. 151-166
Wang, X.H.; Wang, B.Z.; Chen, K.J.
Flip-chip integrated oscillator with reduced phase noise and enhanced output power by using DGS
红外与毫米波学报=Journal of Infrared and Millimeter Waves, v. 2008, (06), 2008, p. 401-404
程知群; 李進; 毛祥根; 譚松; 陳敬
Fluorine plasma ion implantation in AlGaN/GaN heterostructures: A molecular dynamics simulation study
Applied physics letters, v. 92, (10), 2008, MAR 10
Yuan, L.; Wang, M.J.; Chen, K.J.
Gain improvement of enhancement-mode AlGaN/GaN high-electron-mobility transistors using dual-gate architecture
Japanese Journal of Applied Physics, v. 47, pt. 2, no. 4S, Apr 2008, p. 2820-2823
Wang, Ruonan; Wu, Yichao; Chen, Kevin J.
High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors
Applied physics letters, v. 92, (25), 2008, JUN 23
Chen, Wanjun; Wong, King-Yuen; Huang, Wei; Chen, Kevin J.
Low-frequency noise properties of double channel AlGaN/GaN HEMTs
Solid-state electronics, v. 52, (5), 2008, MAY, p. 606-611
Jha, Shrawan Kumar; Surya, Charles C.; Chen, Kevin Jing; Lau, Kei May; Jelencovie, E.
Molecular dynamics calculation of the fluorine ions' potential energies in AlGaN/GaN heterostructures
Journal of applied physics, v. 104, (11), 2008, DEC 1
Yuan, L.; Wang, M.J.; Chen, K.J.
Persistent photoconductivity and carrier transport in AlGaN/GaN heterostructures treated by fluorine plasma
Applied physics letters, v. 92, (8), 2008, FEB 25, article number 082105
Li, Baikui; Ge, Weikun; Wang, Jiannong; Chen, Kevinjing
The effect of physical design parameters on the RF and microwave performance of the BST thin film planar interdigitated varactors
Sensors and Actuators a-physical, v. 141, (2), 2008, FEB 15, p. 231-237
Zhang, J.; Zhang, H.; Lu, S.G.; Xu, Z.; Chen, K.J.
一种采用新型复合沟道GaN HEMTs低噪声分布式放大器
半导体学报=Chinese Journal of Semiconductors, v. 2008, 12, 2008, p. 2297-2300
程知群; 周肖鵬; 陳敬

Conference paper 11

Atomistic Modeling of Fluorine Implantation and Diffusion in III-Nitride Semiconductors
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, p. 543-546
Yuan, Li; Wang, Maojun; Chen, Kevin J.
Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 5, (6), 2008, p. 1892-1894
Li, Baikui; Chen, Jing; Lau, Kei May; Ge, Weikun; Wang, Jiannong
Distributed amplifier using enhancement-mode AlGaN/GaN HEMTs
2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008, 2008, p. 94-96
Cheng, Z.; Zhou, X.; Chen, K.J.
Fabrication of suspending gan microstructures with combinations of anisotropic and isotropic dry etching techniques
2008 Proceedings of the ASME - 2nd International Conference on Integration and Commercialization of Micro and Nanosystems, MicroNano 2008, 2008, p. 573-577
Lv, J.; Yang, Z.; Chen, K.J.
Fluorine Plasma Ion Implantation Technology: a New Dimension in GaN Device Processing
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, 2008, p. 1074-1077
Chen, K.J.
High Temperature Operation of Normally-off AlGaN/GaN Power HEMTs Using CF4 Plasma Treatment
9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Beijing (China), 20-23 Oct 2008
Chen, Wanjun; Wong, King Yuen; Huang, Wei; Chen, Kevin J.
High-performance AlGaN/GaN HEMT-compatible lateral field-effect rectifiers
66th DRC Device Research Conference Digest, Santa Barbara, CA, United States, 23-25 June 2008, 2008, p. 287-288
Chen, Wanjun; Huang, Wei; Wong, King Yuen; Chen, Kevin Jing
Molecular Dynamics Simulation Study on Fluorine Plasma Ion Implantation in AlGaN/GaN Heterostructures
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, p. 1090-1093
Yuan, Li; Wang, Maojun; Chen, Kevin J.
Monolithic Integration of Lateral Field-Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, p. 1-4
Chen, Wanjun; Wong, King-Yuen; Chen, Kevin J.
Source injection induced off-State breakdown and its improvement by enhanced back barrier with fluorine ion implantation in AlGaN/GaN HEMTs
IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, USA, 15-17 December 2008, P.1-4
Wang, Maojun; Chen, Kevin J.
Temperature Dependence of AlGaN/GaN HEMT-Compatible Lateral Field Effect Rectifier
EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, 2008, p. 96-99
Wong, King-Yuen; Chen, Wanjun; Huang, Wei; Chen, Kevin J.


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Article 12

1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTs
Microwave and optical technology letters, v. 49, (6), 2007, JUN, p. 1360-1362
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yu Gang; Lau, Kei May; Chen, Kevin Jing
A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel Al0.3_Ga0.7_N/Al0.05_Ga0.95_{N/GaN HEMTs}
红外与毫米波学报=Journal of Infrared and Millimeter Waves, v. 2007, (04), 2007, p. 241-245
程知群; 蔡勇; 劉杰; 周玉剛; 劉稚美; 陳敬
A stub tapped branch-line coupler for dual-band operations
IEEE microwave and wireless components letters, v. 17, (2), 2007, FEB, p. 106-108
Zhang, Hualiang; Chen, Kevin J.
A tunable bandstop resonator based on a compact slotted ground structure
IEEE transactions on microwave theory and techniques, v. 55, (9), 2007, SEP, p. 1912-1918
Wang, Xiao-Hua; Wang, Bing-Zhong; Zhang, Hualiang; Chen, Kevin J.
DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
IEEE transactions on electron devices, v. 54, (1), January 2007
Liu, Jie; Zhou, Yugang; Zhu, Jia; Cai, Yong; Lau, Kei May; Chen, Kevin Jing
Device isolation by plasma treatment for planar integration of enhancement/depletion-mode AlGaN/GaN high electron mobility transistors
Japanese Journal of Applied Physics, v. 46, pt. 1, no. 4B, 24 Apr 2007, p. 2330-2333
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits
IEEE electron device letters, v. 28, (5), 2007, MAY, p. 328-331
Cai, Yong; Cheng, Zhiqun; Yang, Zhenchuan; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Integration of enhancement and depletion-mode AlGaN/GaN MIS-HFETs by fluoride-based plasma treatment
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 204, (6), 2007, JUN, p. 2023-2027
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
Chinese Physics, v. 16, (11), 2007, NOV, p. 3494-3497
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yu Gang; Lau, Kei May; Chen, Kevin Jing
Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse
IEEE electron device letters, v. 28, (3), 2007, MAR, p. 189-191
Song, Di; Liu, Jie; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Novel composite-channel Al_0.3Ga_0.7N/ Al_0.05Ga_0.95N/GaN HEMT MMIC VCO with low phase noise
JOURNAL OF INFRARED AND MILLIMETER WAVES, v. 26, (4), 2007, AUG, p. 241-245
Zhi-Qun, Cheng; Yong, Cai; Jie, Liu; Yu-Gang, Zhou; Zhi-Mei, Liu; Jing, Chen
Surface acoustic wave device on AlGaN/GaN heterostructure using two-dimensional electron gas interdigital transducers
Applied physics letters, v. 90, (21), 2007, MAY 21, Article number 213506
Wong, King Yuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing

Conference paper 12

A microstrip bandpass filter with an electronically reconfigurable transmission zero
Proceedings of the 36th European Microwave Conference, EuMC 2006, 2007, p. 653-656
Zhang, H.; Chen, K.J.
Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment
Proceedings of International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007, 2007, p. 313-315
Li, Haiou; Tang, Chak Wah; Chen, Kevin Jing; Lau, Kei May
Fabrication of position-controllable GaN nanostructures
Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, 2007, p. 985-988
Yang, Zhen Chuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevinjing
Fabrication of Vertical Position-controllable GaN Nanowires on (111) Si Substrate
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 813-816
Wang, Congshun; Yang, Zhenchuan; Zhang, Baoshun; Wang, Yong; Wang, Hui; Lau, Kei May; Chen, Kevin Jing
Low noise distributed amplifier using composite-channel Al _0.3Ga0.7N/Al_0.05Ga_0.95N/GaN HEMTs
IET Conference Publications, (529 CP), 2007, p. 513-519
Cheng, Zhiqun; Wu, Yichao; Sun, Lingling; Lau, Kei May; Chen, Kevin Jing
Microwave noise characterization of enhancement-mode AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
65th DRC Device Research Conference, 2007, p. 77-78
Liu, Jie; Song, Di; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevinjing
Microwave performance dependence of BST thin film planar interdigitated varactors on different substrates
Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, 2007, p. 678-682
Zhang, J.; Zhang, H.; Chen, K.J.; Lu, S.G.; Xu, Z.
Planar two-dimensional electron gas (2DEG) IDT SAW filter on AlGaN/GaN heterostructure
IEEE MTT-S International Microwave Symposium Digest, 2007, p. 2043-2046
Wong, Kingyuen; Tang, Wilson; Lau, Kei May; Chen, Kevin Jing
Quantum, power, and compound semiconductors - Reliability and characterization of power HEMTs
Technical Digest - International Electron Devices Meeting, IEDM, 2007, p. 379
Kizilyalli, I.C.; Chen, K.J.
Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment
Technical Digest - International Electron Devices Meeting, IEDM, 2007, p. 389-392
Yi, Congwen; Wang, Ruonan; Huang, Wei; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabrication of suspended GaN microstructures
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p. 670-672
Yang, Zhen Chuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing
Two-dimensional Electron Gas (2DEG) IDT SAW Devices on AlGaN/GaN Heterostructure
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 1045-1048
Wong, Kingyuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing


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Article 16

A physical model for on-chip spiral inductors with accurate substrate modeling
IEEE Transactions on Electron Devices, v. 53, (12), 2006, p. 2942-2948
Huo, X.; Chan, P.C.H.; Chen, K.J.; Luong, H.C.
AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
IEEE electron device letters, v. 27, (1), 2006, JAN, p. 10-12
Liu, Jie; Zhou, Yu Gang; Zhang, Jizhi; Lau, Kei May; Chen, Kevin Jing
Bandpass filters with reconfigurable transmission zeros using varactor-tuned tapped stubs
IEEE microwave and wireless components letters, v. 16, (5), 2006, MAY, p. 249-251
Zhang, HL; Chen, KJ
CAD equivalent-circuit modeling of attenuation and cross-coupling for edge-suspended coplanar waveguides on lossy silicon substrate
IEEE transactions on microwave theory and techniques, v. 54, (5), 2006, MAY, p. 2249-2255
Leung, LLW; Chen, KJ
Characterization and Attenuation Mechanisms of CMOS Compatible Micromachined Edge-suspended Coplanar Waveguides on Low-resistivity Silicon Substrate
IEEE Trans. Advanced Packaging,, vol. 29, No. 3, pp. 496-503, Aug. 2006.
Leung, Lydia L.W.; Zhang, J.W.; Hon, W.C.; Chen, Kevin J.
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
IEEE transactions on electron devices, v. 53, (9), 2006, SEP, p. 2207-2215
Cai, Yong; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
IEEE transactions on electron devices, v. 53, (6), 2006, JUN, p. 1474-1477
Jia, Shuo; Cai, Yong; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing
Enhancement-mode AlGaN/GaN HEMTs with low on-resistance and low knee-voltage
IEICE transactions on electronics, v. E89C, (7), 2006, JUL, p. 1025-1030
Cai, Yong; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing
Enhancement-mode Si3N4/AlGaN/GaN MISHFETs
IEEE electron device letters, v. 27, (10), 2006, OCT, p. 793-795
Wang, Ruonan; Cai, Yong; Tang, Chi-Wai; Lau, Kei May; Chen, Kevin Jing
Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 203, (7), 2006, MAY, p. 1712-1715
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing
GaN-on-pattemed-silicon (GPS) technique for fabrication of GaN-based MEMS
Sensors and Actuators a-physical, v. 130, (Sp. Iss. SI), 2006, AUG 14, p. 371-378
Yang, Zhenchuan; Wang, Ruonan; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin J.
Isoelectronic indium-surfactant-doped Al0.3Ga0.7N/GaN high electron mobility transistors
Applied physics letters, v. 88, (12), 2006, MAR 20
Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing; Lau, Kei May
Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique
Applied physics letters, v. 88, (4), 2006, JAN 23, article number 041913
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing
Miniaturized coplanar waveguide bandpass filters using multisection stepped-impedance resonators
IEEE transactions on microwave theory and techniques, v. 54, (3), 2006, MAR, p. 1090-1095
Zhang, HL; Chen, KJ
Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment
IEEE transactions on electron devices, v. 53, (9), 2006, SEP, p. 2223-2230
Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE electron device letters, v. 27, (8), 2006, AUG, p. 633-635
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing

Conference paper 12

A planar integration process for E/D-mode AlGaN/GaN HEMT DCFL integrated circuits
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, Article number 4110036, p. 261-264
Wang, Ruonan; Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch
Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2312-2316
Liu, Jie; Zhou, Yugang; Zhu, Jia; Lau, Kei May; Chen, Kevin Jing
Analysis of SAW filter fabricated on anisotropic substrate using finite-difference time-domain method
Proceedings - IEEE Ultrasonics Symposium, v. 1, 2006, p. 96-99
Wong, K.Y.; Tam, W.Y.; Chen, K.J.
Compact on-chip three-dimensional electromagnetic bandgap structure
IEEE MTT-S International Microwave Symposium Digest, 2006, p. 594-597
Leung, L.L.W.; Chen, K.J.
Core Technologies for III-Nitride Integrated Microsensors
6th Emerging Information Technology Conference, Richardson, Texas, USA, Aug 10-13, 2006
Chen, Kevin Jing; Lau, Kei May
Enhancement-Mode A1GaN/GaN Metal Insulator Semiconductor HFETs Using Fluoride-Based Plasma Treatment Technique
Int. Workshop on Nitride Semiconductors, Kyoto, Japan, Oct 22-27, 2006
Wang, Ruonan; Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2368-2372
Jia, Shuo; Cai, Yong; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing
GaN MENS by MOCVD Growth of GaN on Patterned Si Substrates and Wet Etching
21th Meeting of the Electrochemical Society, Chicago, Illinois, May 6-10, 2007
Yang, Zhenchuan; Zhang, Baoshun; Chen, Kevin Jing; Lau, Kei May
GaN-based Direct-Coupled FET Logic (DCFL) Digital Circuits Operating at 375 oC
2006 Int. Conf. on Solid State Devices and Materials, Yokahama, Japan, Sept 12-15, 2006
Cai, Y.; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor
Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC 2006), 2006, article number 4099867, p. 105-108
Jha, S.K.; Surya, C.; Chen. K.J.; Lau, K.M.
Normally-off AlGaN/GaN low-density-drain HEMTs (LDD-HEMT) with enhanced breakdown voltage and suppressed current collapse
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, 2007, p. 257-260
Song, Di; Liu, Jie; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing
Planar integration of SAW filter with HEMT on AlGaN/GaN heterostructure using fluoride-based plasma treatment
Proceedings - IEEE Ultrasonics Symposium, v. 1, 2006, p. 281-284
Wong, Kingyuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing


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Article 13

A tri-section stepped-impedance resonator for cross-coupled bandpass filters
IEEE microwave and wireless components letters, v. 15, (6), 2005, JUN, p. 401-403
Zhang, HL; Chen, KJ
AlGaN-GaN double-channel HEMTs
IEEE transactions on electron devices, v. 52, (4), 2005, APR, p. 438-446
Chu, Rongming; Zhou, Yu Gang; Liu, Jie; Wang, Deliang; Chen, Kevin Jing; Lau, Kei May
AlGaN-GaNHEMTs on patterned silicon (111) substrate
IEEE electron device letters, v. 26, (3), March 2005, p. 130-132
Jia, Shuo; Dikme, Yilmaz Lmaz; Wang, Deliang; Chen, Kevin Jing; Lau, Kei May; Heuken, Michael
Broadband microwave noise characteristics of high-linearity composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
IEEE electron device letters, v. 26, (8), 2005, AUG, p. 521-523
Cheng, Zhiqun; Liu, Jie; Zhou, Yu Gang; Cai, Yong; Chen, Kevin Jing; Lau, Kei May
CMOS-compatible micromachining techniques for fabricating high-performance edge-suspended RF microwave passive components on silicon substrate
Journal of micromechanics and microengineering, v. 15, (2), 2005, FEB, p. 328-335
Zhang, JW; Hon, WC; Leung, LLW; Chen, KJ
Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition
Journal of Electronic Materials, v. 34, (1), 2005, JAN, p. 112-118
Zhou, Yu Gang; Wang, Deliang; Chu, Rongming; Tang, Chak Wah; Qi, Yundong; Lü, Zhendong; Chen, Kevin Jing; Lau, Kei May
Enhanced-performance of AlGaN-GaNHEMTs grown on grooved sapphire substrates
IEEE electron device letters, v. 26, (12), December 2005, p. 870-872
Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing; Lau, Kei May
Highly linear A1(0.3)Ga(0.7)N-A1(0.05)Ga(0.95)N-GaN composite-channel HEMTs
IEEE electron device letters, v. 26, (3), 2005, MAR, p. 145-147
Liu, Jie; Zhou, Yu Gang; Chu, Rongming; Cai, Yong; Chen, Kevin Jing; Lau, Kei May
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE electron device letters, v. 26, (7), 2005, JUL, p. 435-437
Cai, Yong; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May
III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films
Applied physics letters, v. 86, (3), 2005, JAN 17
Cai, Yong; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May
Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition
Journal of applied physics, v. 97, (5), 2005, MAR 1
Wang, Deliang; Jia, Shuo; Chen, Kevin Jing; Lau, Kei May; Dikme, Yilmaz Lmaz; Van Gemmern, Philipp; Lin, YC; Kalisch, Holger; Jansen, Rolf H.; Heuken, Michael
Microwave characterization and modeling of high aspect ratio through-wafer interconnect vias in silicon substrates
IEEE transactions on microwave theory and techniques, v. 53, (8), 2005, AUG, p. 2472-2480
Leung, LLW; Chen, KJ
Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor
IEEE electron device letters, v. 26, (7), 2005, JUL, p. 432-434
Chu, Chun San; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May

Book chapter 1

Monostable-Bistable Transition Resonant Tunneling Logic Gate, MOBILE, Constructed with Monolithic Integration of RTD and FET
Int. Workshop on Future Information Processing Technologies, Porvoo Finland / Sepetember 4-8 1995
Yamamoto, M.; Maezawa, K.; Chen, K.J.

Conference paper 13

A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure
Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, 2005, p. 385-388
Chu, Chun San; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May
AlGaN/GaN HEMTs on Grooved Sapphire Substrate,'6th Int. Conf. on Nitride Semiconductors,(ICNS-6)
Bremen, Germany, Aug. 28-Sep. 2, 2005
Feng, ZhiHong; Cai, ShuJin; Chen, Kevin Jing; Lau, Kei May
Bandpass and bandstop filters using CMOS-compatible micromachined edge-suspended coplanar waveguides
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 91-94
Zhang, Hualiang; Zhang, Jinwen; Leung, Lydia L.W.; Chen, Kevin J.
Compact bandpass filters using slow-wave coplanar waveguide tri-section stepped-impedance resonators
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 2298-2301
Hualiang, Zhang; Chen, Kevin J.
Fabrication of Suspended GaN Microstructures Using GaN on Patterned Silicon (GPS) Technique
6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Yang, Z.; Wang, Rong; Jia, Shuo; Wang, Deliang; Zhang, Bao Shun; Chen, Kevin Jing; Lau, Kei May
GaN on Patterned Silicon (GPS) technique for fabrication of GaN-based MEMS
Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05, v. 1, 2005, p. 887-890
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Chen, Kevin Jing; Lau, Kei May
GaN on Patterned Silicon (GPS) technique for GaN-based integrated microsensors
Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 298-301
Yang, Zhen Chuan; Wang, Ruonan; Wang, Deliang; Zhang, Baoshun; Chen, Kevinjing; Lau, Kei May
Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth
Physica Status Solidi C: Conferences, v. 2, (7), 2005, p. 2663-2667
Zhou, Yugang; Chu, Rongming; Liu, Jie; Chen, Kevin Jing; Lau, Kei May
MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates
2006 International Conference on Compound Semiconductor Manufacturing Technology, Vancouver, BC, Canada, Digest, p.243, April 24-27, 2006.
Tang, Chak Wah; Jiang, L.; Lau, Kei May; Chen, Kevin Jing
Monolithic integrated c-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 1112-1115
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing
Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits
Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 771-774
Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Chen, Kevinjing; Lau, Kei May
Reduced Gate-bias dependence of 2DEG mobility in a Composite-Channel HEMT
6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Zhu, Jia; Liu, J.; Zhou, Yu Gang; Cai, Yong; Chen, Kevin Jing; Lau, Kei May
Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Device Research Conference - Conference Digest, DRC, v. 2005, 2005, p. 179-180
Cai, Yong; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May


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Article 6

A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs
Solid-state electronics, v. 48, (10-11), 2004, OCT-NOV, p. 2047-2050
Suligoj, T.; Liu, H.; Sin, JKO; Tsui, K.; Chu, RM; Chen, KJ; Biljanovic, P.; Wang, KL
Characterization of GaN grown on patterned Si(111) substrates
Journal of Crystal Growth, v. 272, (1-4), 2004, DEC 10, p. 489-495
Wang, Deliang; Dikme, Yilmaz Lmaz; Jia, Shuo; Chen, Kevin Jing; Lau, Kei May; Van Gemmern, Philipp; Lin, YC; Kalisch, Holger; Jansen, RoIf H.; Heuken, Michael
CMOS-compatible micromachined edge-suspended spiral inductors with high Q-factors and self-resonance frequencies
IEEE electron device letters, v. 25, (6), 2004, JUN, p. 363-365
Chen, KJ; Hon, WC; Zhang, JW; Leung, LLW
High-performance large-inductance embedded inductors in thin array plastic packaging (TAPP) for RF system-in-package applications
IEEE microwave and wireless components letters, v. 14, (9), 2004, SEP, p. 449-451
Chen, KJ; Chan, KW; Wong, MKW; Fok, NMK; Kwan, KKP; Fan, NCH
Low-loss coplanar waveguides interconnects on low-resistivity silicon substrate
IEEE transactions on components and packaging technologies, v. 27, (3), 2004, SEP, p. 507-512
Leung, LLW; Hon, WC; Chen, KJ
Low-loss microwave filters on CMOS-grade standard silicon substrate with low-k BCB dielectric
Microwave and optical technology letters, v. 40, (1), 2004, JAN 5, p. 9-11
Leung, LLW; Chen, KJ; Huo, X.; Chan, PCH

Conference paper 12

Accurate modeling of lossy silicon substrate for on-chip inductors and transformers design
IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers, 2004, p. 627-630
Huo, X.; Chen, K.J.; Luong, H.; Chan, P.C.H.
Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity
Technical Digest - International Electron Devices Meeting, IEDM, 2004, p. 811-814
Liu, Jie; Zhou, Yugang; Chu, Rongming; Cai, Yong; Chen, Kevin Jing; Lau, Kei May
Characterization and modeling of a step-gate-oxide MOSFET for RF power amplifiers
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 1, 2004, p. 345-348
Jia, S.; Tsui, K.K.P.; Liao, X.; Chen, K.J.
Fabrication of edge-suspended microwave passive components using CMOS-compatible micromachining
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 3, 2004, p. 1695-1698
Zhang, J.; Hon, W.C.; Leung, L.L.W.; Chen, K.J.
GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 3, 2004, p. 2257-2260
Chu, Chun San; Zhou, Yugang; Chu, Rongming; Chen, Kevin Jing; Lau, Kei May
High-performance CMOS-compatible micromachined edge-suspended coplanar waveguides on low-resistivity silicon substrate
Conference Proceedings- European Microwave Conference, v. 1, 2004, p. 45-48
Leung, L.L.W.; Zhang, J.; Hon, W.C.; Chen, K.J.
High-performance edge-suspended spiral inductors and CPWS on CMOS-grade silicon substrates
2004 4th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2004, 2004, p. 586-589
Zhang, J.; Hon, W.C.; Leung, L.L.W.; Chen, K.J.
High-performance low-cost embedded inductors using thin array plastic packaging (TAPP) for RF/microwave applications
Conference Proceedings- European Microwave Conference, v. 2, 2004, p. 519-522
Wong, M.; Fok, N.; Kwan, K.; Fan, N.; Chan, K.W.; Chen, K.J.
High-Q CMOS-compatible micromachined edge-suspended spiral inductors
IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers, 2004, p. 263-266
Hon, W.C.; Zhang, J.; Leung, L.L.W.; Chen, K.J.
Microwave characterization of high aspect ratio through-wafer interconnect vias in silicon substrates
IEEE MTT-S International Microwave Symposium Digest, v. 2, 2004, p. 1197-1200
Leung, L.L.W.; Chen, K.J.
Quantitative Stress Characterization in GaN Films grown on patterned Si(111) by Micro-Raman Spectroscopy
2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25
Wang, De Liang; Jia, S.; Chen, Jing Kevin; Dikme, Y.; Van Gemmern, P.; Lin, Y.C.; Heuken, Michael
Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT
2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25 2004
Chu, Rongming; Zhou, Yugang; Liu, Jie; Chen, Kevin Jing; Lau, Kei May


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Article 3

0.5 mu m silicon-on-sapphire metal oxide semiconductor field effect transistor for RF power amplifier applications
Japanese Journal of Applied Physics, v. 42, pt. 1, no. 8, Aug 2003, p. 4982-4986
Tsui, Kenneth; Chen, Kevin J.; Lam, Sang; Chan, Man Sun
Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures
Physica Status Solidi C, Vol. 0, (7), 2003, p. 2400-2403
Chu, Rongming; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May
Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
IEEE journal of solid-state circuits, v. 38, (2), 2003, FEB, p. 312-318
Chen, KJ; Niu, GF

Conference paper 5

A Low-cost Horizontal Current Bipolar Transistor Technology (HCBT) for the BiCMOS Integration with FinFETs
International Semiconductor Device Research Symposium (ISDRS), Washington D.C., pp. 518-519
Suligoj, T.; Liu, H.; Sin, J.K.O.; Tsui, K.; Chen, K.J.; Biljanovic, P.; Wang, K.L.
A step-gate oxide SOI MOSFET for RF power amplifiers in short- and medium-range wireless applications
2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2003, p. 33-36
Liao, XP; Tsui, KKP; Liu, HT; Chen, KJ; Sin, JKO
AlGaN/GaN/Graded-AlGaN double heterostructure HEMT
2003 Int. Conf. Solid-State Devices and Materials (SSDM2003), Tokyo, Japan, Sepetmber 16-18 2003, p. 918-919
Zhou, Y.G.; Chu, R.M.; Chen, K.J.; Lau, K.M.
Silicon-on-Organic Integration of a 2.4 GHz VCO Using High Q Copper Inductors and Solder-bumped Flip Chip Technology
Proceedings of the Custom Integrated Circuits Conference, 2003, p. 537-540
Huo, X.; Xiao, G.W.; Chen, K.J.; Chan, P.C.H.
Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors
2003 Electronic Material Conference (EMC2003), Salt Lake City, Utah, USA, June 25-27 2003, p. 85
Chu, Rongming; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May


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Article 1

Silicon-based high-Q inductors incorporating electroplated copper and low-K BCB dielectric
IEEE electron device letters, v. 23, (9), 2002, SEP, p. 520-522
Huo, X.; Chen, KJ; Chan, PCH

Conference paper 4

High-performance microwave passive components on silicon substrate
2002 3RD INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 2002, p. 263-266
Chen, KJ; Huo, X.; Leung, LLW; Chan, PCH
High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer
IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2002, p. 403-406
Huo, X.; Chen, KJ; Chan, PCH
High-Q copper inductors on standard silicon substrate with a low-K BCB dielectric layer
IEEE MTT-S International Microwave Symposium digest, 2002, p. 513-516
Xiao, H.; Chen, KJ; Chan, PCH
RF Power Characteristics of Thin Film Silicon-on-Sapphire MOSFET
International Conference on Solid State Devices and Materials, Nagoya, Japan, September 17-20, pp. 594-595
Tsui, Kin Pun; Chen, Kevin J.; Lam, Sang; Chan, Mansun


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Conference paper 1

On-Chip Microwave Filters on Standard Silicon Substrate Incorporating a Low-k BCB Dielectric Layer
European Microwave Conference at Milan, Italy
Leung, Lydia L.W.; Chen, Kevin J.; Huo, Xiao; Chan, Philip C.H.


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Article 2

Design and fabrication of reflective nematic displays with only one polarizer
Acta photonica sinica=光子学报, v. 29, (8), August 2000, p. 692-702
Yu, Feihong; Wang, Qian; Pan, Weimin; Chen, Jun; Guo, Haicheng
Experimental realization of reflective bistable cholesteric liquid crystal displays with new driving scheme and low driving voltage
光子學報=Acta photonica sinica, v. 29, (5), May 2000, p. 420-425
Yu, Feihong; Wang, Qian; Pan, Weimin; Gong, Ye; Chen, Huiguang; Chen, Jun; Guo, Haicheng


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Conference paper 2

A Symmetric Structure Based on Resonant Tunneling Diodes for Vision Chips
1999 National Symposium on Circuit and Systems (NSCAS'99), November 24 1999
Zhang, Bin; Chen, K.J.; Ruan, Gang; Chen, Richard M.M.
Novel RTD-HEMT-RTD structure based on simulations
Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, 1999, p. 178-181
Zhang, Bin; Chen, Kevin J.; Gang, Ruan; Chen, Richard M.M.


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Article 1

Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multilevel output
IEEE journal of solid-state circuits, v. 33, (2), 1998, p. 268-274
Waho, T.; Chen, K.J.; Yamamoto, M.


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Article 2

A novel functional logic circuit using resonant-tunneling devices for multiple-valued logic applications
Japanese Journal of Applied Physics, v. 36, pt. 1, no.3B, 1997, p. 1818-1821
Waho, Takao; Chen, Kevin J.; Yamamoto, Masafumi
High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMT's)
IEEE Transactions on Electron Devices, v. 44, (11), November 1997, p. 2038-2040
Chen, Jing; Maezawa, Koichi; Yamamoto, Masafumi

Conference paper 3

Circuit modeling of programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
Proceedings - IEEE International Symposium on Circuits and Systems, v. 3, 1997, p. 1628-1631
Niu, G.F.; Chen, K.J.; Chen, R.M.M.; Ruan, G.; Waho, T.; Maezawa, K.; Yamamoto, M.
Microwave-frequency operation of resonant tunneling high electron mobility transistors
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 106-109
Chen, Kevin J.
Small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)
Asia-Pacific Microwave Conference Proceedings, APMC, v. 2, 1997, p. 529-532
Chen, Kevin J.


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Article 7

A novel multiple-valued logic gate using resonant tunneling devices
IEEE electron device letters, v. 17, (5), 1996, p. 223-225
Waho, T.; Chen, K.J.; Yamamoto, M.
An exclusive-OR logic circuit based on controlled quenching of series-connected negative differential resistance devices
IEEE electron device letters, v. 17, (6), 1996, p. 309-311
Chen, K.J.; Waho, T.; Maezawa, K.; Yamamoto, M.
Device technology for monolithic integration of inp-based resonant tunneling diodes and hemts
IEICE transactions on electronics, v. E79C, (11), 1996, p. 1515-1523
Chen, K.J.; Maezawa, K.; Waho, T.; Yamamoto, M.
Frequency multipliers using InP-based resonant-tunneling high electron mobility transistors
IEEE electron device letters, v. 17, (5), 1996, p. 235-238
Chen, K.J.; Yamamoto, M.
High-performance InP-based enhancement-mode HEMT's using non-alloyed ohmic contacts and Pt-based buried gate technology
IEEE Trans. on Electron Devices, v. 43, (2),1996, Feb, p. 252-257
Chen, K.J.; Enoki, T.; Maezawa, K.; Arai, K.; Yamamoto, M.
InP-based high-performance monostable-bistable transition logic element (MOBILE): An intelligent logic gate featuring weighted-sum threshold operations
Japanese Journal of Applied Physics, v. 35, pt. 1, no. 2B, 1996, p. 1172-1177
Chen, Kevin J.; Maezawa, K.; Yamamoto, M.
InP-based high-performance monostable-bistable transition logic elements (MOBILE'S) using integrated multiple-input resonant-tunneling devices
IEEE electron device letters, v. 17, (3), 1996, p. 127-129
Chen, K.J.; Maezawa, K.; Yamamoto, M.

Conference paper 8

A novel functional logic gate using resonant-tunneling devices for multiple-valued loic applications
Extended Abst.1996 Int. Conf. on Solid State Devices and Materials (SSDM 96), Yokohama Japan, Auguest 1996 p. 740-742
Waho, T.; Chen, K.J.; Yamamoto, M.
A variable function logic gate based on controlled quenching of series connected resonant tunneling devices
Proc. of the 1996 Electronics Society Conference of IEICE, Kanazawa Japan, Sepetmber 1996, p.111
Chen, K.J.; Waho, T.; Maezawa, K.; Yamamoto, M.
High frequency characterization and circuit applications of resonant-tunneling high electron mobility transistors (RTHEMTs)
Extended Abstracts of the 44th Spring Meeting (1996), The Jap. Soc. of Appl. Phys., Saitama Japan, March 1996, p. 1307, vol.3
Chen, K.J.; Maezawa, K.; Yamamoto, M.
InP-based ultrafast resonant tunneling high electron mobility transistors (RTHEMTs): novel I-V characteristics and circuitapplications
Proc. of the 1996 IEICE general conference, Tokyo Japan, March 1996, p.123
Chen, K.J.; Akeyoshi, T.; Maezawa, K.
Literal gate using resonant-tunneling devices
International Symposium on Multiple-Valued Logic (ISMVL), 1996, p. 68-73
Waho, T.; Chen, K.J.; Yamamoto, M.
Novel ultrafast functional device: resonant tunneling high electron mobility transistor
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1996, p. 60-63
Chen, Kevin J.; Maezawa, K.; Yamamoto, M.
Programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
Annual Device Research Conference Digest, 1996, p. 170-171
Chen, Kevin J.; Waho, Takao; Maezawa, Koichi; Yamamoto, Masafumi
Quantum functional circuits using series-connected resonant tunneling devices
Proc. of the 1996 Electronics Society Conference of IEICE, Kanazawa Japan, September 1996, p. 251-252
Yamamoto, M.; Maezawa, K.; Waho, T.; Chen, K.J.


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Article 4

Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications
Electronics letters, v. 31, (11), 1995, p. 925-927
Chen, K.J.; Maezawa, K.; Arai, K.; Yamamoto, M.; Enoki, T.
Monolithic integration of resonant tunneling diodes and FET's for monostable-bistable transition logic elements (MOBILE's)
IEEE electron device letters, v. 16, (2), 1995, p. 70-73
Chen, Kevin J.; Akeyoshi, Tomoyuki; Maezawa, Koichi
Monostable-bistable transition logic elements (MOBILEs) based on monolithic integration of resonant tunneling diodes and FETs
Japanese Journal of Applied Physics, v. 34, pt. 1, no. 2B, 1995, p. 1199-1203
Chen, Kevin J.; Akeyoshi, Tomoyuki; Maezawa, Koichi
Novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor
Applied physics letters, v. 67, 1995, p. 3608-3610
Chen, K.J.; Maezawa, K.; Yamamoto, M.

Conference paper 4

A Unified BSIM I-V Model for Circuit Simulation
1995 International Device Research Symposium Proceeding, Virginia, December 1995, p. 603-606
Cheng, Y.; Hu,Chenming; Chen, Kevin J.; Chan, Man Sun; Jeng, M.C.; Liu, Z.H.; Huang, J.H.; Ko, Ping Keung
High-performance enhancement-mode InAlAs/InGaAs HEMT's using non-alloyed ohmic contact and Pt-based buried-gate
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1995, p. 428-431
Chen, Kevin J.; Enoki, Takatomo; Maezawa, Koichi; Arai, Kunihiro; Yamamoto, Masafumi
Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications
Technical digest - International Electron Devices Meeting, 1995, p. 379-382
Chen, Kevin J.; Maezawa, Koichi; Yamamoto, Masafumi
Reset-set flip-flop based on a novel approach to modulating resoant-tunneling current with FETs
Proc. of the 1995 IEICE general conference, Fukuoka Japan, March 1995, p. 130, vol. 2
Chen, K.J.; Akeyoshi, T.; Maezawa, K.


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Article 1

Reset-set flipflop based on a novel approach of modulating resonant-tunneling current with FET gates
Electronics letters, v. 30, (21), 1994, p. 1805-1806
Chen, K.J.; Akeyoshi, T.; Maezawa, K.

Conference paper 1

Monolithic integration of resonant tunneling diodes and FETs for Monostable-Bistable Transition Logic Elements (MOBILEs)
Extended Abstracts of the 55th Autumn Meeting (1994) The Jap. Soc. of Appl. Phys., Nagoya Japan, September 1994, p. 1059, vol. 3
Chen, K.J.; Akeyoshi, T.; Maezawa, K.


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Article 1

Single transistor static memory cell: Circuit application of a new quantum transistor
Applied Physics Letters, v. 62, 1993, p. 96-98
Chen, K.J.; Yang, C.H.; Wilson, R.A.; Wood, C.E.C.

Conference paper 1

Dynamics of energy and phase relaxation in ultrafast resonant tunneling transistors
American Physical Society annualmeeting, Seattle Washington, March, 1993
Chen, K.J.; Yang, C.H.; Wilson, R.A.


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Article 2

Modeling of a new field-effect resonant tunneling transistor
Journal of Applied Physics, v. 71, (3), 1992, p. 1537-1539
Chen, K.J.; Yang, C.H.
Observation of the negative persistent photoconductivity in an n-channel GaAs/AlxGa1-xAs single heterojunction
Applied Physics Letters, v. 60, (17), 1992, p. 2113-2115
Chen, K.J.; Yang, C.H.; Wilson, R.A.

Conference paper 3

Observation of the negative persistent photoconductivity in an n-channel GaAs/AlxGa1-xAs single heterojunction
American Physical Society annual meeting, Indianapolis Indiana, March 1992
Chen, K.J.; Yang, C.H.; Wilson, R.A.
Resonant tunneling between two- and three-dimensions: modeling of tunneling diodes and tunneling transistors
American Physical Societyannual meeting, Cincinnati Ohio, March, 1991
Chen, K.J.; Yang, C.H.
Single transistor static memory cell: circuit application of a new quantum transistor
1992 International Conference on Solid State Devices and Materials (SSDM 92), Tsukuba Japan, 1992, p. 741-743
Yang, C.H.; Chen, K.J.; Wilson, R.A.; Wood, C.E.C.


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Article 2

On the intrinsic bistability in resonant tunneling structures: observation of the area and temperature dependence of hysteresis
Journal of Applied Physics, v. 70, (4), 1991, p. 2473-2475
Chen, J.G.; Chen, K.J.; Wilson, R.A.; Johnson, W.; Yang, C.H.
The I-V characteristics of doublebarrier resonant tunneling diodes: observation and calculation on their temperature dependence and asymmetry
Journal of Applied Physics, v. 70, (6), 1991, p. 3131-3136
Chen, K.J.; Chen, J.G.; Yang, C.H.; Wilson, R.A.


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2016 23

Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors with Photonic-Ohmic Drain
IEEE Transactions on Electron Devices, v. 63, (7), July 2016, Article number 7478098, p. 2831-2837
Tang, Xi; Li, Baikui; Zhang, Zhaofu; Tang, Gaofei; Wei, Jin; Chen, Jing Article
Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
IEEE Electron Device Letters, v. 37, (3), March 2016, article number 7386610, p. 265-268
Hua, Mengyuan; Lu, Yunyou; Liu, Shenghou; Liu, Cheng; Fu, Kai; Cai, Yong; Zhang, Baoshun; Chen, Kevin J. Article
Dynamic Gate Stress-induced VTH Shift and its Impact on Dynamic RON in GaN MIS-HEMTs
IEEE Electron Device Letters, v. 37, (2), February 2016, article number 7347343, p. 157-160
Yang, Shihe; Lu, Yunyou; Wang, Hanxing; Liu, Shenghou; Liu, Cheng; Chen, Kevin J. Article
Gate stack engineering for GaN lateral power transistors
Semiconductor Science and Technology, v. 31, (2), February 2016, article number 024001
Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Chen, Kevin Jing Article
High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
IEEE Electron Device Letters, v. 37, (12), December 2016, article number 7590090, p. 1617-1620
Huang, Sen; Liu, Xinyu; Wang, Xinhua; Kang, Xuanwu; Zhang, Jinhan; Bao, Qilong; Wei, Ke; Zheng, Yingkui; Zhao, Chao; Gao, Hongwei; Sun, Qian; Zhang, Zhaofu; Chen, Kevin J. Article
Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
Scientific Reports, v. 6, June 2016, article number 27676
Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J. Article
Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges
IEEE Electron Device Letters, v. 37, (11), November 2016, article number 7567511, p. 1458-1461
Wei, Jin; Zhang, Meng; Jiang, Huaping; Cheng, Ching-Hsiang; Chen, Jing Article
On-Chip Addressable Schottky-On-Heterojunction Light-Emitting Diode Arrays On AlGaN/GaN-On-Si Platform
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 13, (5-6), May 2016, p. 365-368
Tang, Xi; Li, Baikui; Lu, Yunyou; Chen, Jing Article
Optoelectronic devices on AlGaN/GaN HEMT platform
Physica Status Solidi (A) Applications and Materials Science, v. 213, (5), May 2016, p. 1213-1221
Li, Baikui; Tang, Xi; Wang, Jiannong; Chen, Jing Article
Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications
IEEE Transactions on Electron Devices, v. 63, (6), June 2016, article number 7466844, p. 2469-2473
Wei, Jin; Jiang, Huaping; Jiang, Qimeng; Chen, Jing Article
Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform
IEEE Photonics Technology Letters, v. 28, (24), December 2016, article number 7725988, p. 2803-2806
Li, Baikui; Tang, Xi; Tang, Gaofei; Wei, Jin; Wang, Jiannong; Chen, Jing Article
Toward Reliable MIS- and MOS-gate Structures for GaN Lateral Power Devices
Physica Status Solidi (A) Applications and Materials Science, v. 213, (4), April 2016, p. 861-867
Chen, Kevin J.; Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan Article
面向高性能GaN基功率電子的器件物理研究
中國科學:物理學 力學 天文學=Scientia Sinica: Physica, Mechanica et Astronomica, v. 46, (10), July 2016, article number 107307, p. 91-106
黃森; 楊樹; 唐智凱; 化夢媛; 王鑫華; 魏珂; 魏珂; 包琦龍; 劉新宇; 陳敬 Article
Comparison of SiN_x and AlN Passivations for AlGaN/GaN HEMTs
229th ECS Meeting, San Diego, CA, 29 May - 2 June, 2016
Yang, Song; Lei, Lei; Yu, Kun; Zhang, Anping; Chen, Kevin J. Conference paper
Compatibility of AlN/SiNx Passivation with High-Temperature Process
CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology, 2016, p. 233-236
Hua, Mengyuan; Lu, Yunyou; Liu, Shenghou; Liu, Cheng; Fu, Kai; Cai, Yong; Zhang, Baoshun; Chen, Kevin J. Conference paper
Critical Heterostructure Design for Low On-Resistance Normally-Off Double-Channel MOS-HEMT
28th International Conference on Indium Phosphide & Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, Japan, 26-30 June 2016
Wei, Jin; Liu, Shenghou; Li, Baikui; Tang, Xi; Tang, Gaofei; Zhang, Zhaofu; Chen, Jing Conference paper
Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
Technical Digest - International Electron Devices Meeting, IEDM, 2016-February, February 2016 , article number 7409662, p. 9.4.1-9.4.4
Wei, Jin; Liu, Shenghou; Li, Baikui; Tang, Xi; Zhang, Zhaofu; Tang, Gaofei; Liu, Cheng; Lu, Yunyou; Hua, Mengyuan; Chen, Jing Conference paper
Enhancing dynamic performance of GaN-on-Si power devices with on-chip photon pumping
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, July 2017, article number 7998839, p. 61-64
Li, Baikui; Tang, Xi; Wang, Jiannong; Chen, Kevin J Conference paper
First-Principles Study of GaN Surface Electronic Structures with Ga, O or N Adatom
47th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, 8-10 December 2016
Zhang, Zhaofu; Li, Baikui; Tang, Xi; Qian, Qingkai; Hua, Mengyuan; Lei, Jiacheng; Huang, Baoling; Chen, Kevin Jing Conference paper
Impact of Integrated Photonic-Ohmic Drain on Static and Dynamic Characteristics of GaN-on-Si Heterojunction Power Transistors
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520770, p. 31-34
Tang, Xi; Li, Baikui; Wang, Hanxing; Wei, Jin; Tang, Gaofei; Zhang, Zhaofu; Chen, Jing Conference paper
Impact of V-TH Shift on R-ON in E/D-mode GaN-on-Si Power Transistors: Role of Dynamic Stress and Gate Overdrive
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520828, p. 263-266
Yang, Shu; Lu, Yunyou; Liu, Shenghou; Wang, Hanxing; Liu, Cheng; Chen, Kevin J Conference paper
Performance Enhancement and Characterization Techniques for GaN Power Devices
28th International Conference on Indium Phosphide & Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), June 26-30, 2016
Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Longobardi, Giorgia; Udrea, Florin; Chen, Kevin J Conference paper
Proposal of a Novel GaN/SiC Hybrid FET (HyFET) with Enhanced Performance for High-Voltage Switching Applications
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2016-July, July 2016, article number 7520787, p. 99-102
Wei, Jin; Jiang, Huaping; Jiang, Qimeng; Chen, Jing Conference paper

2015 36

A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters
IEEE Transactions on Electron Devices, v. 62, (4), April 2015, article number 7039245, p. 1143-1149
Wang, Han Xing; Kwan, Alex Man Ho; Jiang, Qimeng; Chen, Kevin Jing Article
AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
IEEE Transactions on Electron Devices, v. 62, (6), June 2015, article number 7103310, p. 1870-1878
Yang, Shu; Liu, Shenghou; Lu, Yunyou; Liu, Cheng; Chen, Kevin Jing Article
An Analytical Study of Power Delivery Systems for Many-Core Processors Using On-Chip and Off-Chip Voltage Regulators
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, v. 34, (9), September 2015, article number 7061385, p. 1401-1414
Wang, Xuan; Xu, Jiang; Wang, Zhe; Chen, Kevin J.; Wu, Xiaowen; Wang, Zhehui; Yang, Peng; Duong, Luan Huu Kinh Article
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
IEEE Transactions on Electron Devices, v. 62, (10), October 2015, article number 7234887, p. 3215-3222
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen,Jing Kevin Article
Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
Applied Physics Express, v. 8, (6), June 2015, article number 064101
Lu, Yunyou; Jiang, Qimeng; Tang, Zhikai; Yang, Shu; Liu, Cheng; Chen, Kevin Jing Article
Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High Electron Mobility Transistors under Hard Switching Operation
IEEE Electron Device Letters, v. 36, (8), August 2015, p. 760-762
Wang, Hanxing; Liu, Cheng; Jiang, Qimeng; Tang, Zhikai; Chen, Kevin J. Article
GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN_x as Gate Dielectric
IEEE Electron Device Letters, v. 36, (5), May 2015, article number 7055356, p. 448-450
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen, Kevin Jing Article
High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique
IEEE Electron Device Letters, v. 36, (8), August 2015, article number 7123580, p. 754-756
Huang, Sen; Liu, Xinyu; Zhang, Jinhan; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Zheng, Yingkui; Liu, Honggang; Jin, Zhi; Zhao, Chao; Liu, Cheng; Liu, Shenghou; Yang, Shu; Zhang, Jincheng; Hao, Yue; Chen, Kevin Jing Article
Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer
Applied Physics Letters, v. 106, (5), February 2015, article number 051605
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Shen, Bo; Chen, Kevin Jing Article
Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor
IEEE Electron Device Letters, v. 36, (12), December 2015, article number 7295542, p. 1287-1290
Wei, Jin; Liu, Shenghou; Li, Baikui; Tang, Xi; Lu, Yunyou; Liu, Cheng; Hua, Mengyuan; Zhang, Zhaofu; Tang, Gaofei; Chen, Jing Article
Normally OFF Al₂O₃-AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation
IEEE Transactions on Electron Devices, v. 62, (3), Mar 2015, article number 7015556, p. 821-827
Lu, Yunyou; Li, Baikui; Tang, Xi; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin J. Article
O-3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors
Applied Physics Letters, v. 106, (3), January 2015, article number 033507
Huang, Sen; Liu, Xinyu; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Sun, Bing; Yang, Xuelin; Shen, Bo; Liu, Cheng; Liu, Shenghou; Hua, Mengyuan; Yang, Shu; Chen,Jing Kevin Article
Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode
Applied Physics Letters, v. 106, (9), March 2015, article number 093505
Li, Baikui; Tang, Xi; Chen, Kevin J. Article
Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment
IEEE Electron Device Letters, v. 36, (8), August 2015, article number 7123614, p. 757-759
Lin, Shuxun; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Yu, Min; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Huang, Sen; Chen, Kevin Jing; Shen, Bo Article
Temperature Dependence of the Surface-and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate
IEEE Transactions on Electron Devices, v. 62, (8), August 2015, article number 7154486, p. 2475-2480
Zhang, Chuan; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing; Shen, Bo Article
Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier
IEEE Electron Device Letters, v. 36, (4), April 2015, article number 7042345, p. 318-320
Liu, Cheng; Yang, Shu; Liu, Shenghou; Tang, Zhikai; Wang, Hanxing; Jiang, Qimeng; Chen, Kevin J. Article
650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2015-June, June 2015 , article number 7123434, p. 241-244
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Lu, Yunyou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen, Kevin J. Conference paper
Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs using Schottky-on-Heterojunction Light Emitting Devices
2015 Compound Semiconductor Week (CSW 2015), University of California Santa Barbara, CA, USA, 28 June - 2 July 2015
Tang, Xi; Li, Baikui; Chen, Kevin J. Conference paper
Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs Using Schottky-on-Heterojunction Light-Emitting Devices
42th International Symposium on Compound Semiconductors (ISCS 2015), Santa Barbara, CA, USA, 28 June - 2 July 2015
Tang, Xi; Li, Baikui; Chen, Kevin J. Conference paper
Differences between SiNx and AlN passivations for AlGaN/GaN HEMTs: a TCAD-simulation based study
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Yang, Song; Tang, Zhikai; Lu, Yunyou; Zhang, Anping; Chen, Kevin J. Conference paper
First Demonstration of 0.27-Ω 600-V/10-A GaN-on-Si Power MIS-HEMTs in a 200-mm Hybrid CMOS-/Au-Compatible Process Line
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Yuan, Li; Xiao, Xia; Tang, Longjuan; Li, Huahua; Jiang, Yuanqi; Chen, Kevin J.; Yen, Allen Conference paper
Gate Leakage and Time-Dependent Dielectric Breakdown Characteristics of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs
11th International Conference on Nitride Semiconductors, Beijing, China, September 2015
Hua, Mengyuan; Liu, Cheng; Yang, Shu; Liu, Shenghou; Fu, Kai; Dong, Zhihua; Cai, Yong; Zhang, Baoshun; Chen, Kevin Jing Conference paper
Hard Switching Characteristics of AlN-Passivated AlGaN/GaN on silicon MIS-HEMTs
11th International Conference on Nitride Semiconductors, Beijing, China, 30 August - 4 September 2015
Wang, Hanxing; Liu, Cheng; Jiang, Qimeng; Tang, Zhikai; Chen, Kevin J. Conference paper
High-performance gate-recessed normally-off GaN MIS-HEMTs with thin barrier layer
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Liu, Shenghou; Yang, Shu; Liu, Cheng; Lu, Yunyou; Chen, Kevin J. Conference paper
III-nitride Transistors with Photonic-ohmic Drain for Enhanced Dynamic Performances
2015 IEEE International Electron Devices Meeting (IEDM), The Institute of Electrical and Electronics Engineers, 2015, p. 3531-3534
Tang, Xi; Li, Baikui; Lu, Yunyou; Wang, Hanxing; Liu, Cheng; Wei, Jin; Chen, Jing Conference paper
Improved high-voltage performance of normally-OFF GaN MIS-HEMTs using fluorine-implanted enhanced back barrier
11th International Conference on Nitride Semiconductors, Beijing, China, 30 August - 4 September 2015
Liu, Cheng; Wei, Jin; Liu, Shenghou; Wang, Hanxing; Tang, Zhikai; Yang, Shu; Chen, Jing Conference paper
Improved Thermal Stabilities in Normally-Off GaN MIS-HEMTs
2015 CS ManTech Digest, 2015, p. 159-162
Liu, Cheng; Wang, Hanxing; Yang, Shu; Lu, Yunyou; Liu, Shenghou; Tang, Zhikai; Jiang, Qimeng; Chen, Jing Kevin Conference paper
Nitridation Interfacial-layer Technology for Enhanced Stability in GaN-based Power Devices
RFIT 2015 Proceedings, IEEE Microwave Theory and Techniques Society (IEEE MTT-S), 2015, p. 220-222
Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin J Conference paper
Normally-off GaN MIS-HEMT with Improved Thermal Stability in DC and Dynamic Performance
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 213-216
Liu, Cheng; Wang, Hanxing; Yang, Shu; Lu, Yunyou; Liu, Shenghou; Tang, Zhikai; Jiang, Qimeng; Huang, Sen; Chen, Kevin Jing Conference paper
On-Chip Addressable Schottky-On-Heterojunction Light-Emitting Diode Arrays On AlGaN/GaN-On-Si Platform
11th International Conference on Nitride Semiconductors, Beijing, China, 30 August - 4 September 2015
Tang, Xi; Li, Baikui; Lu, Yunyou; Chen, Kevin J. Conference paper
On-chip Optical Pumping of Deep Traps in AlGaN/GaN-on-Si Power HEMTs
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2015), Institute of Electrical and Electronics Engineers ( IEEE ), 2015, p. 201-204
Tang, Xi; Li, Baikui; Chen, Kevin Jing Conference paper
Reduction of the Current Collapse in GaN High Electron Mobility Transistors by a Novel Surface Treatment
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September 2015
Lin, Shuxun; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Yu, Min; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Shen, Bo; Chen, Kevin J. Conference paper
Schottky-on-Heterojunction Optoelectronic Functional Devices Realized on AlGaN / GaN-on-Si Platform
International Electron Devices Meeting, IEDM, v. 2015, February 2015, article number 113077
Li, Baikui; Tang, Xi; Jiang, Qimeng; Lu, Yunyou; Wang, Hanxing; Wang, Jiannong; Chen, Kevin Jing Conference paper
Suppressed Substrate-Coupled Cross-Talk under AC High-Voltage Switching on the AlGaN/GaN-on-Si Smart Power IC Platform
11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August - 4 September, 2015
Tang, Xi; Jiang, Qimeng; Wang, Hanxing; Li, Baikui; Chen, Kevin J. Conference paper
Technology Challenges of GaN Heterojunction Power Devices
The 7th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2015), Seoul, Korea, 17-20 May 2015
Chen, Kevin J. Conference paper
Toward reliable MIS- and MOS-gate structures for GaN power devices
42nd Int. Symp. on Compound Semiconductors (ISCS), Santa Barbara, USA, 28 June - 2 July 2015
Chen, Kevin J.; Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Tang, Zhikai Conference paper

2014 28

900 V/1.6 mΩ · cm2 normally off Al 2O3/GaN MOSFET on silicon substrate
IEEE Transactions on Electron Devices, v. 61, (6), 2014, article number 6807793, p. 2035-2040
Wang, Maojun; Wang, Ye; Zhang, Chuan; Xie, Bing; Wen, Cheng; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing; Shen, Bo Article
A Highly Linear Integrated Temperature Sensor on a GaN Smart Power IC Platform
IEEE Transactions on Electron Devices, v. 61, (8), 2014, article number 6832561, p. 2970-2976
Kwan, Alex Man Ho; Guan, Yue; Liu, Xiaosen; Chen, Kevin Jing Article
A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, v. 61, (3), 2014, article number 6722951, p. 762-768
Jiang, Qimeng; Tang, Zhikai; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing Article
Al2O3/AlN/GaN MOS-channel-HEMTs with an AlN interfacial layer
IEEE Electron Device Letters, v. 35, (7), 2014, article number 6823096, p. 723-725
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin Jing Article
AlN/GaN Heteostructure TFTs with Plasma Enhanced Atomic Layer Deposition of Epitaxial AlN Thin Film
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 953-956
Liu, Cheng; Liu, Shenghou; Huang, Sen; Li, Baikui; Chen, Kevin Jing Article
Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components
IEEE Transactions on Electron Devices, v. 61, (3), 2014, article number 6716042, p. 755-761
Zhang, Aixi; Zhang, Lining; Tang, Zhikai; Cheng, Xiaoxu; Wang, Yan; Chen, Kevin Jing; Chan, Man Sun Article
GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 949-952
Yang, Shu; Jiang, Qimeng; Li, Baikui; Tang, Zhikai; Chen, Kevin Jing Article
High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications
Solid-State Electronics, v. 91, 2014, p. 19-23
Zhou, Qi; Yang, Shu; Chen, Wanjun; Zhang, Bo; Feng, Zhihong; Cai, Shujun; Chen, Kevin J. Article
High-fMAX high Johnson's figure-of-merit 0.2-μ m gate algan/gan HEMTs on silicon substrate with AlN}/SiNx passivation
IEEE Electron Device Letters, v. 35, (3), 2014, article number 6710223, p. 315-317
Huang, Sen; Wei, Ke; Liu, Guoguo; Zheng, Yingkui; Wang, Xinhua; Pang, Lei; Kong, Xin; Liu, Xinyu; Tang, Zhikai; Yang, Shu; Jiang, Q.; Chen, Kevin Jing Article
Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs
IEEE Transactions on Electron Devices, v. 61, (8), August 2014, article number 6851170, p. 2785-2792
Tang, Zhikai; Huang, Sen; Tang, Xi; Li, Baikui; Chen, Kevin Jing Article
Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement
Applied Physics Letters, v. 104, (1), January 2014, article number 013504
Yang, Shu; Zhou, Chunhua; Jiang, Qimeng; Lu, Jianbiao; Huang, Baoling; Chen, Kevin Jing Article
Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors
Applied Physics Letters, v. 105, (22), December 2014, article number 223508
Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing Article
P-doping-free III-nitride high electron mobility light-emitting diodes and transistors
Applied Physics Letters, v. 105, (3), July 2014, article number 032105
Li, Baikui; Tang, Xi; Wang, Jiannong; Chen, Kevin Jing Article
Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform
IEEE Transactions on Electron Devices, v. 61, (11), November 2014, article number 6902778, p. 3808-3813
Jiang, Qimeng; Tang, Zhikai; Zhou, Chunhua; Yang, Shu; Chen, Kevin Jing Article
Technology for III-N heterogeneous mixed-signal electronics
Physica Status Solidi (A) Applications and Materials Science, v. 211, (4), 2014, p. 769-774
Chen, Kevin Jing; Kwan, Alex Man Ho; Jiang, Qimeng Article
A GaN pulse width modulation integrated circuit
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. 2014, 2014, article number 6856068, p. 430-433
Wang, Hanxing; Ho, Alex Man Kwan; Jiang, Qimeng; Chen, Kevin Jing Conference paper
Analytical Modeling for AlGaN/GaN HEMTs
11th International Workshop on Compact Modeling (IWCM 14), Suntec Singapore Convention and Exhibition Centre, 23 January 2014
Zhang, Aixi; Zhang, Lining; Tang, Zhikai; Cheng, Xiaoxu; Wang, Yan; Chen, Kevin Jing; Chan, Man Sun Conference paper
Characterizing Power Delivery Systems with On/Off-chip Voltage Regulators for Many-core Processors
Proceedings -Design, Automation and Test in Europe, DATE, April 2014, article number 6800261
Wang, Xuan; Xu, Jiang; Wang, Zhe; Chen, Kevin Jing; Wu, Xiaowen; Wang, Zhehui Conference paper
Dielectric/III-N interfaces with nitridation interfacial-layer for GaN power electronics
45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, USA, 10-13 December 2014
Chen, Kevin Jing; Yang, Shu; Tang, Zhikai; Huang, Sen Conference paper
High-temperature Low-damage Gate Recess Technique and Ozone-assisted ALD-grown Al₂O₃ Gate Dielectric for High-performance Normally-off GaN MIS-HEMTs
2014 IEEE International Electron Devices Meeting, v. 2015-February, (February), February 2015, article number 7047071, p. 17.4.1-17.4.4
Huang, Sen; Jiang, Qimeng; Wei, Ke; Liu, Guoguo; Zhang, Jinhan; Wang, Xinhua; Zheng, Yingkui; Sun, Bing; Zhao, Chaorong; Liu, Honggang; Jin, Zhi; Liu, Xinyu; Wang, Hongyue; Liu, Shenghou; Lu, Yunyou; Liu, Cheng; Yang, Shu; Tang, Zhikai; Zhang, Jincheng; Hao, Yue; Chen, Jing Conference paper
Interface Characterization of Normally-Off Al2O3/AlN/GaN MOS-Channel-HEMTs with an AlN Interfacial Layer
8th International Workshop on Nitride Semiconductors (IWN2014), Wroc?aw, Poland, 24-29 August 2014
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin Jing Conference paper
Investigation of gate degradation in Al2O3-AlGaN/GaN MIS-HEMTs using transparent gate electrode
8th International Workshop on Nitride Semiconductors (IWN 2014), Wroc?aw, Poland, 24-29 August 2014
Lu, Yunyou; Li, Baikui; Tang, Xi; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin Jing Conference paper
Nitridation Interfacial-layer Technology: Enabling Low Interface Trap Density and High Stability in III-nitride MIS-HEMTs
Proceedings - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), January 2014, article number 7021325
Yang, Shu; Chen, Kevin Jing Conference paper
Normally-off Hybrid Al₂O₃/GaN MOSFET on Silicon Substrate Based on Wet-etching
Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC's, Institute of Electrical and Electronics Engineers (IEEE), 2014, p. 253-256
Wang, M.; Wang, Y.; Zhang, C.; Wen, C.P.; Wang, J.; Hao, Y.; Wu, W.; Shen, B.; Chen, K.J. Conference paper
Performance Enhancement of Normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN Interfacial Layer
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2014, article number 6856051, p. 362-365
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin Jing Conference paper
Stability and Temperature Dependence of Dynamic RON in AlN-passivated AlGaN/GaN HEMT on Si Substrate
CS MANTECH 2014 - 2014 International Conference on Compound Semiconductor Manufacturing Technology 2014, GaAs Mantech, Incorporated, 2014, p. 97-100
Tang, Zhikai; Huang, Sen; Chen, Kevin Jing Conference paper
Surface Nitridation for Improved Dielectric/III?Nitride Interfaces in GaN MIS?HEMTs
Physica Status Solidi (A) Applications and Materials Science, v. 212, (5), May 2015, p. 1059-1065
Chen, Kevin J; Yang, Shu; Tang, Zhikai; Huang, Sen; Lu, Yunyou; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Li, Baikui Conference paper
Thermally Induced Threshold Voltage Instability of III-nitride MIS-HEMTs and MOSC-HEMTs: Underlying Mechanisms and Optimization Schemes
2014 IEEE International Electron Devices Meeting (IEDM 2014), Institute of Electrical and Electronics Engineers (IEEE), 2014, p. 17.2.1-17.2.4
Yang, Shu; Liu, Shenghou; Liu, Cheng; Tang, Zhikai; Lu, Yunyou; Chen, Kevin Jing Conference paper

2013 40

1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform
IEEE Electron Device Letters, v. 34, (3), 2013, article number 6410335, p. 357-359
Jiang, Qimeng; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing Article
5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing
Electronics Letters, v. 49, (3), January 2013, p. 221-222
Dong, Zhihua; Tan, Shuxin; Cai, Yong; Chen, Hongwei; Liu, Shenghou; Xu, Jicheng; Xue, Lu; Yu, Guohao; Wang, Yue; Zhao, Desheng; Hou, Keyu; Chen, Kevin J.; Zhang, Baoshun Article
600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
IEEE Electron Device Letters, v. 34, (11), 2013, article number 6601638, p. 1373-1375
Tang, Zhikai; Jiang, Qimeng; Lu, Yunyou; Huang, Sen; Yang, Shu; Tang, Xi; Chen, Kevin Jing Article
A dominant-negative mutation of HSF2 associated with idiopathic azoospermia
Human genetics, v. 132, (2), February 2013, p. 159-165
Mou, Lisha; Wang, Yadong; Li, Honggang; Huang, Yi; Jiang, Tao; Huang, Weiren; Li, Zesong; Chen, Jing; Xie, Jun; Liu, Yuchen; Jiang, Zhimao; Li, Xianxin; Ye, Jiongxian; Cai, Zhiming; Gui, Yaoting Article
A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs
IEEE Electron Device Letters, v. 34, (1), 2013, article number 6365744, p. 30-32
Kwan, Alex Man Ho; Chen, Kevin Jing Article
AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process
Japanese Journal of Applied Physics, v. 52, (4 PART 2), April 2013, article number 04CF06
Liu, Xinke; Zhan, Chunlei; Chan, Kwok Wai; Owen, Man Hon Samuel; Liu, Wei; Chi, Dong Zhi; Tan, Leng Seow; Chen, Kevin Jing; Yeo, Yee-Chia Article
AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
Semiconductor Science and Technology, v. 28, (7), July 2013, article number 074015
Chen, Kevin Jing; Huang, Sen Article
Characterization of VT-instability in enhancement-mode Al₂O₃-AlGaN/GaN MIS-HEMTs
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 10, (11), November 2013, p. 1397-1400
Lu, Yunyou; Yang, Shu; Jiang, Qimeng; Tang, Zhikai; Li, Baikui; Chen, Kevin Jing Article
Device Technology for GaN Mixed-Signal Integrated Circuits
Japanese Journal of Applied Physics, v. 52, (11S), November 2013, article number 11NH05
Chen, Kevin J.; Kwan, Alex Man Ho Article
Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
Journal of Applied Physics, v. 114, (14), October 2013, article number 144509
Huang, Sen; Wei, Ke; Tang, Zhikai; Yang, Shu; Liu, Cheng; Guo, Lei; Shen, Bo; Zhang, Jinhan; Kong, Xin; Liu, Guoguo; Zheng, Yingkui; Liu, Xinyu; Chen, Kevin Jing Article
Enhancement-Mode LaLuO3-AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation
Japanese Journal of Applied Physics, v. 52, (8 PART 2), August 2013, article number 08JN02
Yang, Shu; Huang, Sen; Schnee, Michael; Zhao, Qing-Tai; Schubert, Juergen; Chen, Kevin J. Article
Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, v. 60, (10), 2013, article number 6605590, p. 3040-3046
Yang, Shu; Huang, Sen; Schnee, Michael; Zhao, Qing-Tai; Schubert, Juergen; Chen, Kevin Jing Article
Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs
Journal of Semiconductors, v. 34, (2), February 2013, article number 024003
Chen, W.; Zhang, J.; Zhang, B.; Chen, K.J. Article
Genome-wide analysis of microRNAs expression profiling in patients with primary IgA nephropathy
Genome, v. 56, (3), March 2013, p. 161-169
Tan, Kuibi; Chen, Jing; Li, Wuxian; Chen, Yuyu; Sui, Weiguo; Zhang, Yang; Dai, Yong Article
High sensitivity AlGaN/GaN lateral fieldeffect rectifier for zero-bias microwave detection
Electronics Letters, v. 49, (22), October 2013, p. 1391-1393
Zhou, Qi; Chen, Wanjun; Zhou, Chunhua; Zhang, Bo; Chen, Kevin Jing Article
High-performance normally-Off Al2O3 GaN MOSFET using a wet etching-based gate recess technique
IEEE Electron Device Letters, v. 34, (11), 2013, article number 6601679, p. 1370-1372
Wang, Ye; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing; Shen, Bo Article
High-Quality Interface in Al2O3/GaN/GaNAlGaNGaN MIS Structures with in Situ Pre-Gate Plasma Nitridation
IEEE Electron Device Letters, v. 34, (12), 2013, article number 6656897, p. 1497-1499
Yang, Shu; Tang, Zhikai; Wong, King-Yuen; Lin, Yu-Syuan; Liu, Cheng; Lu, Yunyou; Huang, Sen; Chen, Kevin Jing Article
High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs With AlN/SiNx Passivation
IEEE Electron Device Letters, v. 34, (3), 2013, article number 6410341, p. 366-368
Tang, Zhikai; Huang, Sen; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing Article
Integrated Over-Temperature Protection Circuit for GaN Smart Power ICs
Japanese Journal of Applied Physics, v. 52, (8 PART 2), August 2013, article number 08JN15
Kwan, Alex Man Ho; Guan, Yue; Liu, Xiaosen; Chen, Kevin J. Article
Investigation of device geometry- and temperature-dependent characteristics of AlGaN/GaN lateral field-effect rectifier
Semiconductor Science and Technology, v. 28, (1), January 2013, article number 015021
Chen, Wanjun; Zhang, Jing; Wang, Zhigang; Wei, Jin; Zhang, Bo; Chen, Jing Article
Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges
IEEE Electron Device Letters, v. 34, (2), 2013, article number 6403499, p. 193-195
Huang, Sen; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin Jing Article
Overexpression of Cyclooxygenase-1 Correlates with Poor Prognosis in Renal Cell Carcinoma
Asian Pacific journal of cancer prevention, v. 14, (6), 2013, p. 3729-3724
Yu, Zu-Hu; Zhang, Qiang; Wang, Ya-Dong; Chen, Jing; Jiang, Zhi-Mao; Shi, Min; Guo, Xin; Qin, Jie; Cui, Guang-Hui; Cai, Zhi-Ming; Gui, Yao-Ting; Lai, Yong-Qing Article
Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
IEEE Electron Device Letters, v. 34, (9), 2013, article number 6556961, p. 1106-1108
Liu, Cheng; Liu, Shenghou; Huang, Sen; Chen, Kevin Jing Article
Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement
IEEE Transactions on Electron Devices, v. 60, (3), 2013, article number 6449310, p. 1075-1081
Zhou, Qi; Chen, Wanjun; Liu, Shenghou; Zhang, Bo; Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing Article
600 V High-performance AlGaN/GaN HEMTs with AlN/SiN_x Passivation
2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2013), Boston, USA, 23-26 April 2013
Tang, Zhikai; Huang, Sen; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing Conference paper
600V 1.3mμ·cm2 Low-leakage Low-current-collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2013, article number 6694478, p. 191-194
Tang, Zhikai; Huang, Edward Seng-jin; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing Conference paper
AlN/GaN Heterostructure TFTs with the Polarized AlN Barrier Grown by 300 ^oC Plasma Enhanced Atomic Layer Epitaxy
10th Topical Workshop on Heterostructure Microelectronics (TWHM-10), Hakodate, Japan, 2-5 September 2013
Liu, Cheng; Liu, Shenghou; Huang, Sen; Li, Baikui; Chen,Jing Kevin Conference paper
Degradation of Transient OFF-State Leakage Current in AlGaN/GaN HEMTs Induced by ON-State Gate Overdrive
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 928-931
Li, Baikui; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin Jing Conference paper
Device technology for GaN mixed-signal integrated circuits
Japanese Journal of Applied Physics, v. 52, (11 PART 2), November 2013, article number 11NH05
Chen, Kevin Jing Conference paper
GaN Buffer Traps in GaN-on-Si Structure Studied by Thermally Stimulated Current and Back-gating Measurements
10th Int. Conf. on Nitride Semiconductors (ICNS-10), Washington DC, USA, 2013
Yang, Shu; Lu, Jianbiao; Huang, Sen; Zhou, Chunhua; Huang, Baoling; Chen, Kevin Jing Conference paper
GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 11, (3-4), April 2014, p. 949-952
Yang, Shu; Jiang, Qimeng; Li, Baikui; Tang, Zhikai; Chen, Kevin Jing Conference paper
High Performance Normally-Off AlGaN/GaN MOSFET with Al2O3 High-k Dielectric Layer Using a Low Damage Recess Technique
10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, 25-30 August 2013
Wang, Ye; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin Jing Conference paper
High voltage InAlN/GaN HFETs achieved by schottky-contact technology for power applications
ECS Transactions, v. 58, (4), 2013, p. 351-363
Zhou, Qi; Chen, Wanjun; Liu, Shenghou; Zhang, Bo; Feng, Zhihong; Cai, Shujun; Chen, Kevin J. Conference paper
High-Voltage Enhancement/Depletion-mode AlGaN/GaN HEMTs on Modified SOI Substrates
Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa, Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 407-410
Jiang, Qimeng; Liu, Cheng; Lu, Yunyou; Chen, Kevin Jing Conference paper
Improved High-Temperature Stability of 2DEG Channel in AlGaN/GaN Heterostructures by PEALD-grown AlN Thin Film Passivation
10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, 25-30 August 2013
Huang, Sen; Wei, Ke; Liu, Xinyu; Liu, Guoguo; Shen, Bo; Chen, Kevin Jing Conference paper
Mapping of Interface Traps in High-performance Al₂O ₃/AlGaN/GaN MIS-heterostructures Using Frequency- and Temperature-dependent C-V Techniques
Technical Digest - International Electron Devices Meeting, IEDM, 2013, article number 6724573, p. 6.3.1-6.3.4
Yang, Shu; Tang, Zhikai; Wong, King-Yuen; Lin, Yu-Syuan; Lu, Yunyou; Huang, Sen; Chen, Kevin Jing Conference paper
Monolithically Integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and Their Applications in Low-standby-power Start-up Circuit for Switched-mode Power Supplies
2013 IEEE International Electron Devices Meeting (IEDM 2013), Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 156-159
Tang, Zhikai; Jiang, Qimeng; Huang, Sen; Lu, Yunyou; Yang, Shu; Liu, Cheng; Tang, Xi; Liu, Shenghou; Li, Baikui; Chen, Kevin Jing Conference paper
Recent Development in Flourine-ion-implanted GaN-based Heterojunction Power Devices
1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings, 2013, article number 6695570, p. 92-95
Chen, Kevin Jing; Kwan, Man Ho; Tang, Zhikai Conference paper
Technology for III-N Heterogeneous Mixed-signal Electronics
10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, 25-30 August 2013
Chen, Kevin Jing Conference paper
Toward GaN-based Power Integrated Circuits
The 2nd International Conference on Advanced Electromaterials (ICAE 2013), Jeju, Korea, 12-15 November 2013
Chen, Kevin Jing Conference paper

2012 26

AlGaN/GaN MISHEMTs With High-kappa LaLuO3 Gate Dielectric
IEEE Electron Device Letters, v. 33, (7), July 2012, p. 979-981
Yang, Shu; Huang, Sen; Chen, Hongwei; Zhou, Chunhua; Zhou, Qi; Schnee, Michael; Zhao, Qing-Tai; Schubert, Juergen; Chen, Kevin Jing Article
AlGaN/GaN-on-Silicon Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800V and On-State Resistance of 3 m Omega.cm(2) Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process
Applied physics express, v. 5, (6), June 2012, article number 066501
Liu, Xinke; Zhan, Chunlei; Chan, Kwok Wai; Liu, Wei; Tan, Leng Seow; Chen, Kevin Jing; Yeo, Yee-Chia Article
Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layer
物理学报, v. 61, (24), 2012
Duan, Bao-Xing; Yang, Yin-Tang; Chen, Kevin J. Article
Characterization of V_th-instability in Al₂O₃/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement
Physica status solidi. C, Current topics in solid state physics, v. 9, (3-4), 2012, p. 923-926
Huang, Sen; Yang, Shu; Roberts, John; Chen, Kevin J. Article
Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film
IEEE Electron Device Letters, v. 33, (4), April 2012, p. 516-518
Huang, Sen; Jiang, Qimeng; Yang, Shu; Zhou, Chunhua; Chen, Kevin J. Article
Enhancement-mode operation of nanochannel array (NCA) AlGaN/GaN HEMTs
IEEE Electron Device Letters, v. 33, (3), 2012, p. 354-356
Liu, S.; Cai, Y.; Gu, G.; Wang, J.; Zeng, C.; Shi, W.; Feng, Z.; Qin, H.; Cheng, Z.; Chen, K.J.; Zhang, B. Article
Fe-doped InN layers grown by molecular beam epitaxy
Applied physics letters, v. 101, (17), October 2012
Wang, Xinqiang; Liu, Shitao; Ma, Dingyu; Zheng, Xiantong; Chen, Guang; Xu, Fujun; Tang, Ning; Shen, Bo; Zhang, Peng; Cao, Xingzhong; Wang, Baoyi; Huang, Sen; Chen, Kevin J.; Zhou, Shengqiang; Yoshikawa, Akihiko Article
F離子注入新型Al_0.25Ga_0.75N/GaN HEMT器件耐壓分析
物理学报=Acta Physica Sinica, v. 61, (22), 2012, p. 408-414
段寶興; 楊銀堂; 陳敬 Article
High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy
Applied physics express, v. 5, (1), 2012, article number 015502
Wang, X.; Liu, S.; Ma, N.; Feng, L.; Chen, G.; Xu, F.; Tang, N.; Huang, S.; Chen, K.J.; Zhou, S.; Shen, B. Article
Low Dynamic ON-Resistance in AlGaN/GaN-on-Si Power HEMTs Obtained by AlN Thin Film Passivation
ECS transactions, v. 50, (3), 2012, p. 343-351
Chen, Kevin Jing; Huang, Sen; Jiang, Qimeng Article
Schottky source/drain InAlN/AlN/GaN MISHEMT with enhanced breakdown voltage
IEEE Electron Device Letters, v. 33, (1), 2012, p. 38-40
Zhou, Q.; Chen, H.; Zhou, C.; Feng, Z.H.; Cai, S.J.; Chen, K.J. Article
Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance
Japanese Journal of Applied Physics, v. 51, no. 4S, April 2012, Article no. 04DF02
Zhou, Qi; Chen, Hongwei; Zhou, Chunhua; Feng, Zhihong; Cai, Shujun; Chen, Kevin J. Article
Thermally activated pop-in and indentation size effects in GaN films
Journal of physics. D, Applied physics, v. 45, (8), 2012, article number 085301
Lu, Junyong; Ren, Hang; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi Article
UV-illuminated dielectrophoresis by two-dimensional electron gas (2DEG) in AlGaN/GaN heterojunction
Physica status solidi. A, Applications and materials science, v. 209, (11), November 2012, p. 2223-2228
Fu, Junxue; Luo, Yuan; Yobas, Levent; Chen, Kevin J. Article
Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices
IEEE Electron Device Letters, v. 33, (8), August 2012, p. 1132-1134
Zhou, Chunhua; Jiang, Qimeng; Huang, Sen; Chen, Kevin Jing Article
AlD-grown ultrathin AlN film for passivation of AlGaN/GaN HEMTs
27th Int. Conf. on Compound Semiconductor Manufacturing Technology (CS MANTECH), Boston, Massachusetts, USA, Apr 23-26 2012
Huang, Sen; Jiang, Qimeng; Yang, Shu; Zhou, Chunhua; Chen, Kevin J. Conference paper
AlGaN/GaN Metal-2DEG Tunnel Junction FETs with Normally-off Operation, High On-State Current and Low Off-State Leakage
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012, p. 417-420
Chen, Kevin Jing; Yuan, Li; Chen, Hongwei Conference paper
AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process
Proceedings of technical papers, 2012
Liu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S.; Teo, K.L.; Chen, K.J.; Yeo, Y.C. Conference paper
AlGaN/GaN-on-Silicon MOS-HEMTs with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ.cm2 using a CMOS-Compatible Gold-Free Process
2012 Int. Symp. on VLSI Technology, Systems, and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr 23-25 2012
Liu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S.; Chen, Kevin J.; Yeo, Y.C. Conference paper
Enhancement-mode AlGaN/GaN MISHEMTs with fluorinated high-κ LaLuO3 gate dielectric
Int. Workshop on Nitride Semiconductors (IWN2012), Sapporo, Japan, 2012
Yang, Shu; Huang, Sen; Zhao, Qing-Tai; Chen, Kevin Jing Conference paper
Exploiting nanostructure-thin film interfaces in advanced sensor device configurations
Vacuum, v. 86, (6), 2012, p. 757-760
Jha, S.; Wang, H.E.; Kutsay, O.; Jelenkovi?, E.V.; Chen, K.J.; Bello, I.; Kremnican, V.; Zapien, J.A. Conference paper
Fluorine Plasma Ion Implantation: a GaN Normally-off HEMT Technology
4th Int. Symp. On Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma2012), Aichi, Japan, Mar 4-8 2012
Chen, Kevin J. Conference paper
Integrated Gate-protected HEMTs and Mixed-Signal Functional Blocks for GaN Smart Power ICs
2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), San Francisco, USA, December 10-12 2012
Kwan, Alex Man Ho; Liu, Xiaosen; Chen, Kevin J. Conference paper
Mechanism of PEALD-grown AlN passivation of AlGaN/GaN HEMTs
Int. Workshop on Nitride Semiconductors (IWN2012), Sapporo, Japan, 2012
Huang, Sen; Jiang, Qimeng; Yang, Shu; Tang, Zhikai; Chen, Kevin Jing Conference paper
Normally-off AlGaN/GaN power tunnel-junction FETs
Physica status solidi. C, Current topics in solid state physics, v. 9, 2012, p. 871-874
Chen, Hongwei; Yuan, Li; Zhou, Qi; Zhou, Chunhua; Chen, Kevin J. Conference paper
Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Structures
24th International Symposium on Power Semiconductor Devices and ICs, Bruges, Belgium, 2012, p. 245-248
Zhou, Chunhua; Jiang, Qimeng; Huang, Sen; Chen, Kevin Jing Conference paper

2011 28

A compact dual-band coupled-line balun with tapped open-ended stubs
Progress in electromagnetics research C. Pier C, v. 22, 2011, p. 109-122
Shao, J.; Zhang, H.; Chen, C.; Tan, S.; Chen, K.J. Article
Characterization of High-κ LaLuO₃ Thin Film Grown on AlGaN/GaN Heterostructure by Molecular Beam Deposition
Applied physics letters, v. 99, (18), October 2011, article number 182103
Yang, Shu; Huang, Sen; Chen, Hongwei; Schnee, Michael; Zhao, Qing-Tai; Schubert, Jurgen; Chen, Kevin Jing Article
Efficient Parameter Extraction of Microwave Coupled-Resonator Filter Using Genetic Algorithms
International journal of RF and microwave computer-aided engineering, v. 21, (2), March 2011, p. 137-144
Zhang, Hualiang; Bowman, Samuel; Chen, Kevin J. Article
Enhanced Electroluminescence from the Fluorine-plasma Implanted Ni/Au-AlGaN/GaN Schottky Diode
Applied Physics Letters, v. 99, (6), August 2011, article number 062101
Li, Baikui; Wang, Maojun; Chen, Kevinjing; Wang, Jiannong Article
Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology
Physica status solidi. A, Applications and materials science, v. 208, (2), February 2011, p. 434-438
Chen, Kevin J.; Zhou, Chunhua Article
Enhancement-Mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation with a Si(3)N(4) Energy-Absorbing Layer
Electrochemical and solid-state letters, v. 14, (6), 2011, p. H229-H231
Chen, Hongwei; Wang, Maojun; Chen, Kevin J. Article
Fabrication of GaN-based MEMS structures using dry-etch technique
纳米技术与精密工程=Nanotechnology and Precision Engineering, 9, 1, 2011
楊振川; 呂佳楠; 閆桂珍; 陳敬 Article
GaN Single-Polarity Power Supply Bootstrapped Comparator for High-Temperature Electronics
IEEE electron device letters, v. 32, (1), January 2011, p. 27-29
Liu, Xiaosen; Chen, Kevin J. Article
Gate-Induced Schottky Barrier Lowering Effect in AlGaN/GaN Metal-2DEG Tunnel Junction Field Effect Transistor
IEEE electron device letters, v. 32, (9), September 2011, p. 1221-1223
Yuan, Li; Chen, Hongwei; Zhou, Qi; Zhou, Chunhua; Chen, Kevin J. Article
High-Gain and High-Bandwidth AlGaN/GaN High Electron Mobility Transistor Comparator with High-Temperature Operation
Japanese Journal of Applied Physics, v. 50, pt. 2, no. 4, April 2011, Article no. 04DF02
Kwan, Alex Man Ho; Wong, King Yuen; Liu, Xiaosen; Chen, Kevin J. Article
Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices, v. 58, (2), February 2011, article number 5658134, p. 460-465
Wang, Maojun; Chen, Jing Article
Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping
IEEE electron device letters, v. 32, (4), April 2011, p. 482-484
Wang, Maojun; Chen, Kevin J. Article
Microspheres manipulation system by patterned AlGaN/GaN 2DEG electrodes
Physica status solidi. C, Current topics in solid state physics, v. 8, (7-8), 2011, p. 2479-2482
Fu, J.; Chen, K.J. Article
Normally Off AlGaN/GaN Metal-2DEG Tunnel-Junction Field-Effect Transistors
IEEE electron device letters, v. 32, (3), March 2011, p. 303-305
Yuan, Li; Chen, Hongwei; Chen, Kevin J. Article
ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors
Journal of applied physics, v. 110, (11), December 2011
Ma, Chenyue; Chen, Hongwei; Zhou, Chunhua; Huang, Sen; Yuan, Li; Roberts, John; Chen, Kevin J. Article
Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
AIP Advances, v. 1, (3), 2011, article number 032132
Lu, Junyong; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi Article
Surface properties of AlxGa1-xN/GaN heterostructures treated by fluorine plasma: An XPS study
Physica status solidi. C, Current topics in solid state physics, v. 8, (7-8), 2011, p. 2200-2203
Huang, S.; Chen, H.; Chen, K.J. Article
Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors
Japanese Journal of Applied Physics, v. 50, no. 11R, 2011, Article no. 110202
Huang, Sen; Yang, Shu; Roberts, John; Chen, Kevin J. Article
A Novel Normally-off GaN Power Tunnel Junction FET
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, 2011, p. 276-279
Yuan, Li; Chen, Hongwei; Zhou, Qi; Zhou, Chunhua; Chen, Kevin J. Conference paper
Characterization of AlGaN/GaN cantilevers fabricated with deep-release techniques
Key engineering materials, v. 483, 2011, p. 14-17
Lv, J.; Yang, Z.; Yan, G.; Cai, Y.; Zhang, B.; Chen, K.J. Conference paper
Characterization of GaN cantilevers fabricated with GaN-on-silicon platform
Proceedings, IEEE micro electro mechanical systems, 2011, p. 388-391
Lv, J.N.; Yang, Z.C.; Yan, G.Z.; Cai, Y.; Zhang, B.S.; Chen, K.J. Conference paper
Design of dual-band coupled-line balun
Final Program and Book of Abstracts - iWAT 2011: 2011 IEEE International Workshop on Antenna Technology: Small Antennas, Novel Structures and Innovative Metamaterials, 2011, p. 332-335
Zhang, H.; Shao, J.; Tan, S.; Chen, K.J. Conference paper
Electroluminescence from the fluorine-plasma treated Ni/Au-AlGaN/GaN Schottky diode
AIP Conference Proceedings, v. 1399, (113), December 2011, p. 113-114
Li, Baikui; Wang, Maojun; Chen, Jing; Wang, Jiannong Conference paper
Observation of Trap-Assisted Steep Sub-threshold Swing in Schottky Source/Drain Al2O3/InAlN/GaN MISHEMT
69th Device Research Conference (DRC), Santa Barbara, CA, USA, June 20-22, 2011
Zhou, Qi; Chen, Hongwei; Zhou, Chunhua; Feng, Zhihong; Cai, S.J.; Chen, Kevin J. Conference paper
Physics of Fluorine Plasma Ion Implantation for GaN Normally-off HEMT Technology
IEEE International Electron Devices Meeting (IEDM), Washington, DC, December 5-7 2011
Chen, Kevinjing; Yuan, Li; Wang, Maojun; Chen, Hongwei; Huang, Sen; Zhou, Qi; Zhou, Chunhua; Li, Baikui; Wang, Jiannong Conference paper
Schottky Source/Drain Al2O3/InAlN/GaN MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF Current Ratio
2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), Washington, DC, December 5-7 2011
Zhou, Qi; Huang, Sen; Chen, Hongwei; Zhou, Chunhua; Feng, Zhihong; Cai, Shujun; Chen, Kevin J. Conference paper
Stealth Electrode Dielectrophoresis: Microspheres Manipulation by Patterned 2-Dimensional Electron Gas (2DEG) in AlGaN/GaN Heterostructures
ISMM 2011 in Conjunction with the KBCS Spring Meeting, Seoul, Korea, from June 2 to 4, 2011. Abstract: F3-056
Fu, Junxue; Yobas, Levent; Chen, Kevin J. Conference paper
The role of fluorine ions in GaN heterojunction transistors: Applications and stability
Proceedings of SPIE--the international society for optical engineering, v. 7939, 2011
Chen, K.J. Conference paper

2010 26

18-GHz 3.65-W/mm enhancement-mode AlGaN/GaN HFET using fluorine plasma ion implantation
IEEE Electron Device Letters, v. 31, (12), 2010, p. 1386-1388
Feng, Z.H.; Zhou, R.; Xie, S.Y.; Yin, J.Y.; Fang, J.X.; Liu, B.; Zhou, W.; Chen, K.J.; Cai, S.J. Article
AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough Breakdown Immunity and Low On-Resistance
IEEE electron device letters, v. 31, (1), 2010, JAN, p. 5-7
Zhou, Chunhua; Chen, Wanjun; Piner, Edwin L.; Chen, Kevin J. Article
AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability
Electronics letters, v. 46, (6), 2010, MAR 18, p. 445-U92
Zhou, C.; Chen, W.; Piner, E.L.; Chen, K.J. Article
Characterization and analysis of the temperature-dependent on -resistance in AlGaN/GaN lateral field-effect rectifiers
IEEE Transactions on Electron Devices, v. 57, (8), 2010, p. 1924-1929
Wong, K.Y.; Chen, W.; Chen, K.J. Article
Determining phonon deformation potentials of hexagonal GaN with stress modulation
Journal of Applied Physics, v. 108, (12), 2010, article number 123520
Lu, Junyong; Wang, ZhiJia; Deng, Dongmei; Wang, Yong; Chen, Kevin Jing; Lau, Kei May; Zhang, Tongyi Article
Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlxGa1-xN/GaN heterostructures
Applied physics letters, v. 96, (23), 2010, JUN 7
Huang, Sen; Chen, Hongwei; Chen, Kevin J. Article
GaN smart power IC technology
PHYSICA STATUS SOLIDI b-basic SOLID STATE PHYSICS, v. 247, (7), 2010, JUL, p. 1732-1734
Wong, King-Yuen; Chen, Wanjun; Liu, Xiaosen; Zhou, Chunhua; Chen, Kevin J. Article
High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance
Electronics letters, v. 46, (24), November 2010, p. 1626-1627
Chen, W.; Zhou, C.; Chen, K.J. Article
Integrated Nanorods and Heterostructure Field Effect Transistors for Gas Sensing
Journal OF PHYSICAL CHEMISTRY C, v. 114, (17), 2010, MAY 6, p. 7999-8004
Jha, Shrawan K.; Liu, Chao Ping; Chen, Zhen Hua; Chen, Kevin J.; Bello, Igor; Zapien, Juan A.; Zhang, Wenjun; Lee, Shuit-Tong Article
Integrated Voltage Reference Generator for GaN Smart Power Chip Technology
IEEE transactions on electron devices, v. 57, (4), 2010, APR, p. 952-955
Wong, King-Yuen; Chen, Wanjun; Chen, Kevin J. Article
Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 207, (6), 2010, JUN, p. 1332-1334
Wang, Maojun; Cheng, Chung Choi; Beling, Chris D.; Fung, Stevenson; Chen, Kevin J. Article
Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage
Electronics letters, v. 46, (18), 2010, SEP 2, p. 1280-U63
Chang, C.T.; Hsu, T.H.; Chang, E.Y.; Chen, Y.C.; Trinh, H.D.; Chen, K.J. Article
Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique
IEEE transactions on electron devices, v. 57, (7), 2010, JUL, p. 1492-1496
Wang, Maojun; Chen, Kevin J. Article
Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability
IEEE electron device letters, v. 31, (7), 2010, JUL, p. 668-670
Zhou, Chunhua; Chen, W.; Piner, Edwin L.; Chen, Kevin J. Article
Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode
IEEE microwave and wireless components letters, v. 20, (5), 2010, MAY, p. 277-279
Zhou, Qi; Wong, King-Yuen; Chen, Wanjun; Chen, Kevin J. Article
AlGaN/GaN dual-channel lateral field-effect rectifier with punchthrough breakdown immunity and low on-resistance
2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010, 2010
Zhou, Chunhua; Chen, Wanjun; Piner, Edwin L.; Chen, Kevin J. Conference paper
Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: Evidence of Fermi level de-pinning at Ni/AlGaN interface
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 7, (7-8), July 2010, p. 1961-1963
Li, Baikui; Wang, Maojun; Chen, Jing; Wang, Jiannong Conference paper
Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT Technology
The 37th Int. Symp. On Compound Semiconductors (ISCS2010), Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4, 2010
Chen, Kevin J. Conference paper
Enhancement-mode AlGaN/GaN HEMTs fabricated by standard fluorine ion implantation
2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010, 2010
Chen, Hongwei; Wang, Maojun; Chen, Kevin J. Conference paper
GaN smart discrete power devices
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2010, p. 1303-1306
Chen, K.J.; Zhou, C. Conference paper
GaN Smart Power IC Technologies
IEEE University Government Industry Micro/Nano Symposium (UGIM 2010), Purdue University, West Lafayette, IN, USA, June 28-July 1, 2010
Chen, Kevin J. Conference paper
Reliability of Enhancement-mode AlGaN/GaN HEMTs Under ON-State Gate Overdrive
2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, 2010
Ma, Chenyue; Chen, Hongwei; Zhou, Chunhua; Huang, Sen; Yuan, Li; Roberts, John; Chen, Kevin J. Conference paper
Residual stress characterization of GaN microstructures using bent-beam strain sensors
2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, 2010, p. 138-140
Lv, J.; Yang, Z.; Yan, G.; Cai, Y.; Zhang, B.; Chen, K.J. Conference paper
Self-aligned enhancement-mode AIGaN/GaN HEMTs using 25 ke V fluorine ion implantation
Device Research Conference - Conference Digest, DRC, 2010, p. 137-138
Chen, H.; Wang, M.; Chen, K.J. Conference paper
Self-protected GaN power devices with reverse drain blocking and forward current limiting capabilities
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2010, p. 343-346
Zhou, C.; Chen, W.; Piner, E.L.; Chen, K.J. Conference paper
Single-Polarity Power Supply Bootstrapped Comparator for GaN Smart Power Technology
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium, 2010
Liu, Xiaosen; Chen, Kevin J. Conference paper

2009 16

Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy
Applied physics letters, v. 94, (6), 2009, FEB 9
Wang, M.J.; Yuan, L.; Cheng, C.C.; Beling, C.D.; Chen, K.J. Article
Design of dual-band rat-race couplers
IET Microwaves Antennas & Propagation, v. 3, (3), 2009, APR, p. 514-521
Zhang, H.; Chen, K.J. Article
Diffusion mechanism and the thermal stability of fluorine ions in GaN after ion implantation
Journal of applied physics, v. 105, (8), 2009, APR 15
Wang, M.J.; Yuan, L.; Chen, K.J.; Xu, F.J.; Shen, B. Article
Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform
IEEE electron device letters, v. 30, (10), 2009, OCT, p. 1045-1047
Lv, Jianan; Yang, Zhenchuan; Yan, Guizhen; Lin, Wenkui; Cai, Yong; Zhang, Baoshun; Chen, Kevin J. Article
Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode
Applied physics letters, v. 95, (23), 2009, DEC 7, article number 232111
Li, Baikui; Wang, Maojun; Chen, Kevinjing; Wang, Jiannong Article
Microbridge tests on gallium nitride thin films
Journal of micromechanics and microengineering, v. 19, (9), September 2009, article number 095019
Huang, Haiyou; Li, ZhiYing; Lu, Junyong; Wang, Zhi-Jia; Wang, Chong-Shun; Lau, Kei May; Chen, Kevin Jing; Zhang, Tongyi Article
Silicon-on-Organic Integration of a 2.4-GHz VCO Using High-Q Copper Inductors and Solder-Bumped Flip Chip Technology
IEEE transactions on components and packaging technologies, v. 32, (1), 2009, MAR, p. 191-196
Huo, Xiao; Xiao, Guo-Wei; Chan, Philip C.H.; Chen, Kevin J. Article
Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT
IEEE electron device letters, v. 30, (5), 2009, MAY, p. 430-432
Chen, Wanjun; Wong, King-Yuen; Chen, Kevin J. Article
Study of diffusion and thermal stability of fluorine ions in GaN by Time-of-Flight Secondary Ion Mass Spectroscopy
Physica status solidi. C, Current topics in solid state physics, v. 6, (SUPPL. 2), 2009, p. S952-S955
Wang, M.; Yuan, L.; Xu, F.; Shen, B.; Chen, K.J. Article
Temperature dependence and thermal stability of planar-integrated enhancement/depletion-mode AlGan/GaN HEMTs and digital circuits
Solid-state electronics, v. 53, (1), 2009, JAN, p. 1-6
Wang, Ruonan; Cai, Yong; Chen, Kevin J. Article
Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications
IEEE transactions on electron devices, v. 56, (12), 2009, DEC, p. 2888-2894
Wong, King-Yuen; Chen, Wanjun; Zhou, Qi; Chen, Kevin J. Article
GaN smart power chip technology
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009, 2009, p. 403-407
Chen, K.J. Conference paper
HEMT-compatible lateral field-effect rectifier using CF(4) plasma treatment
Physica status solidi C, Current topics in solid state physics, v. 6, (SUPPL. 2), 2009, p. S948-S951
Chen, Wanjun; Wong, King Yuen; Chen, Kevin J. Conference paper
High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode
2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009, 2009
Zhou, Q.; Wong, K.Y.; Chen, W.; Chen, K.J. Conference paper
Integrated voltage reference and comparator circuits for GaN smart power chip technology
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2009, p. 57-60
Wong, K.Y.; Chen, W.; Chen, K.J. Conference paper
Wide bandgap GaN smart power chip technology
2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009, 2009
Wong, King Yuen; Chen, Wanjun; Chen, Kelvin J. Conference paper

2008 22

A second-order dual-band bandpass filter using a dual-band admittance inverter
Microwave and optical technology letters, v. 50, (5), 2008, MAY, p. 1184-1187
Zhang, Hualiang; Chen, Kevin J. Article
Compact broadband dual-band bandpass filters using slotted ground structures
Progress in Electromagnetics research-pier, v. 82, 2008, p. 151-166
Wang, X.H.; Wang, B.Z.; Chen, K.J. Article
Flip-chip integrated oscillator with reduced phase noise and enhanced output power by using DGS
红外与毫米波学报=Journal of Infrared and Millimeter Waves, v. 2008, (06), 2008, p. 401-404
程知群; 李進; 毛祥根; 譚松; 陳敬 Article
Fluorine plasma ion implantation in AlGaN/GaN heterostructures: A molecular dynamics simulation study
Applied physics letters, v. 92, (10), 2008, MAR 10
Yuan, L.; Wang, M.J.; Chen, K.J. Article
Gain improvement of enhancement-mode AlGaN/GaN high-electron-mobility transistors using dual-gate architecture
Japanese Journal of Applied Physics, v. 47, pt. 2, no. 4S, Apr 2008, p. 2820-2823
Wang, Ruonan; Wu, Yichao; Chen, Kevin J. Article
High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors
Applied physics letters, v. 92, (25), 2008, JUN 23
Chen, Wanjun; Wong, King-Yuen; Huang, Wei; Chen, Kevin J. Article
Low-frequency noise properties of double channel AlGaN/GaN HEMTs
Solid-state electronics, v. 52, (5), 2008, MAY, p. 606-611
Jha, Shrawan Kumar; Surya, Charles C.; Chen, Kevin Jing; Lau, Kei May; Jelencovie, E. Article
Molecular dynamics calculation of the fluorine ions' potential energies in AlGaN/GaN heterostructures
Journal of applied physics, v. 104, (11), 2008, DEC 1
Yuan, L.; Wang, M.J.; Chen, K.J. Article
Persistent photoconductivity and carrier transport in AlGaN/GaN heterostructures treated by fluorine plasma
Applied physics letters, v. 92, (8), 2008, FEB 25, article number 082105
Li, Baikui; Ge, Weikun; Wang, Jiannong; Chen, Kevinjing Article
The effect of physical design parameters on the RF and microwave performance of the BST thin film planar interdigitated varactors
Sensors and Actuators a-physical, v. 141, (2), 2008, FEB 15, p. 231-237
Zhang, J.; Zhang, H.; Lu, S.G.; Xu, Z.; Chen, K.J. Article
一种采用新型复合沟道GaN HEMTs低噪声分布式放大器
半导体学报=Chinese Journal of Semiconductors, v. 2008, 12, 2008, p. 2297-2300
程知群; 周肖鵬; 陳敬 Article
Atomistic Modeling of Fluorine Implantation and Diffusion in III-Nitride Semiconductors
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, p. 543-546
Yuan, Li; Wang, Maojun; Chen, Kevin J. Conference paper
Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity
Physica Status Solidi (C) Current Topics in Solid State Physics, v. 5, (6), 2008, p. 1892-1894
Li, Baikui; Chen, Jing; Lau, Kei May; Ge, Weikun; Wang, Jiannong Conference paper
Distributed amplifier using enhancement-mode AlGaN/GaN HEMTs
2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008, 2008, p. 94-96
Cheng, Z.; Zhou, X.; Chen, K.J. Conference paper
Fabrication of suspending gan microstructures with combinations of anisotropic and isotropic dry etching techniques
2008 Proceedings of the ASME - 2nd International Conference on Integration and Commercialization of Micro and Nanosystems, MicroNano 2008, 2008, p. 573-577
Lv, J.; Yang, Z.; Chen, K.J. Conference paper
Fluorine Plasma Ion Implantation Technology: a New Dimension in GaN Device Processing
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, 2008, p. 1074-1077
Chen, K.J. Conference paper
High Temperature Operation of Normally-off AlGaN/GaN Power HEMTs Using CF4 Plasma Treatment
9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Beijing (China), 20-23 Oct 2008
Chen, Wanjun; Wong, King Yuen; Huang, Wei; Chen, Kevin J. Conference paper
High-performance AlGaN/GaN HEMT-compatible lateral field-effect rectifiers
66th DRC Device Research Conference Digest, Santa Barbara, CA, United States, 23-25 June 2008, 2008, p. 287-288
Chen, Wanjun; Huang, Wei; Wong, King Yuen; Chen, Kevin Jing Conference paper
Molecular Dynamics Simulation Study on Fluorine Plasma Ion Implantation in AlGaN/GaN Heterostructures
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, p. 1090-1093
Yuan, Li; Wang, Maojun; Chen, Kevin J. Conference paper
Monolithic Integration of Lateral Field-Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, p. 1-4
Chen, Wanjun; Wong, King-Yuen; Chen, Kevin J. Conference paper
Source injection induced off-State breakdown and its improvement by enhanced back barrier with fluorine ion implantation in AlGaN/GaN HEMTs
IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, USA, 15-17 December 2008, P.1-4
Wang, Maojun; Chen, Kevin J. Conference paper
Temperature Dependence of AlGaN/GaN HEMT-Compatible Lateral Field Effect Rectifier
EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, 2008, p. 96-99
Wong, King-Yuen; Chen, Wanjun; Huang, Wei; Chen, Kevin J. Conference paper

2007 24

1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTs
Microwave and optical technology letters, v. 49, (6), 2007, JUN, p. 1360-1362
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yu Gang; Lau, Kei May; Chen, Kevin Jing Article
A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel Al0.3_Ga0.7_N/Al0.05_Ga0.95_{N/GaN HEMTs}
红外与毫米波学报=Journal of Infrared and Millimeter Waves, v. 2007, (04), 2007, p. 241-245
程知群; 蔡勇; 劉杰; 周玉剛; 劉稚美; 陳敬 Article
A stub tapped branch-line coupler for dual-band operations
IEEE microwave and wireless components letters, v. 17, (2), 2007, FEB, p. 106-108
Zhang, Hualiang; Chen, Kevin J. Article
A tunable bandstop resonator based on a compact slotted ground structure
IEEE transactions on microwave theory and techniques, v. 55, (9), 2007, SEP, p. 1912-1918
Wang, Xiao-Hua; Wang, Bing-Zhong; Zhang, Hualiang; Chen, Kevin J. Article
DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
IEEE transactions on electron devices, v. 54, (1), January 2007
Liu, Jie; Zhou, Yugang; Zhu, Jia; Cai, Yong; Lau, Kei May; Chen, Kevin Jing Article
Device isolation by plasma treatment for planar integration of enhancement/depletion-mode AlGaN/GaN high electron mobility transistors
Japanese Journal of Applied Physics, v. 46, pt. 1, no. 4B, 24 Apr 2007, p. 2330-2333
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits
IEEE electron device letters, v. 28, (5), 2007, MAY, p. 328-331
Cai, Yong; Cheng, Zhiqun; Yang, Zhenchuan; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Integration of enhancement and depletion-mode AlGaN/GaN MIS-HFETs by fluoride-based plasma treatment
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 204, (6), 2007, JUN, p. 2023-2027
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
Chinese Physics, v. 16, (11), 2007, NOV, p. 3494-3497
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yu Gang; Lau, Kei May; Chen, Kevin Jing Article
Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse
IEEE electron device letters, v. 28, (3), 2007, MAR, p. 189-191
Song, Di; Liu, Jie; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Novel composite-channel Al_0.3Ga_0.7N/ Al_0.05Ga_0.95N/GaN HEMT MMIC VCO with low phase noise
JOURNAL OF INFRARED AND MILLIMETER WAVES, v. 26, (4), 2007, AUG, p. 241-245
Zhi-Qun, Cheng; Yong, Cai; Jie, Liu; Yu-Gang, Zhou; Zhi-Mei, Liu; Jing, Chen Article
Surface acoustic wave device on AlGaN/GaN heterostructure using two-dimensional electron gas interdigital transducers
Applied physics letters, v. 90, (21), 2007, MAY 21, Article number 213506
Wong, King Yuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
A microstrip bandpass filter with an electronically reconfigurable transmission zero
Proceedings of the 36th European Microwave Conference, EuMC 2006, 2007, p. 653-656
Zhang, H.; Chen, K.J. Conference paper
Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment
Proceedings of International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007, 2007, p. 313-315
Li, Haiou; Tang, Chak Wah; Chen, Kevin Jing; Lau, Kei May Conference paper
Fabrication of position-controllable GaN nanostructures
Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, 2007, p. 985-988
Yang, Zhen Chuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevinjing Conference paper
Fabrication of Vertical Position-controllable GaN Nanowires on (111) Si Substrate
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 813-816
Wang, Congshun; Yang, Zhenchuan; Zhang, Baoshun; Wang, Yong; Wang, Hui; Lau, Kei May; Chen, Kevin Jing Conference paper
Low noise distributed amplifier using composite-channel Al _0.3Ga0.7N/Al_0.05Ga_0.95N/GaN HEMTs
IET Conference Publications, (529 CP), 2007, p. 513-519
Cheng, Zhiqun; Wu, Yichao; Sun, Lingling; Lau, Kei May; Chen, Kevin Jing Conference paper
Microwave noise characterization of enhancement-mode AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
65th DRC Device Research Conference, 2007, p. 77-78
Liu, Jie; Song, Di; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevinjing Conference paper
Microwave performance dependence of BST thin film planar interdigitated varactors on different substrates
Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, 2007, p. 678-682
Zhang, J.; Zhang, H.; Chen, K.J.; Lu, S.G.; Xu, Z. Conference paper
Planar two-dimensional electron gas (2DEG) IDT SAW filter on AlGaN/GaN heterostructure
IEEE MTT-S International Microwave Symposium Digest, 2007, p. 2043-2046
Wong, Kingyuen; Tang, Wilson; Lau, Kei May; Chen, Kevin Jing Conference paper
Quantum, power, and compound semiconductors - Reliability and characterization of power HEMTs
Technical Digest - International Electron Devices Meeting, IEDM, 2007, p. 379
Kizilyalli, I.C.; Chen, K.J. Conference paper
Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment
Technical Digest - International Electron Devices Meeting, IEDM, 2007, p. 389-392
Yi, Congwen; Wang, Ruonan; Huang, Wei; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabrication of suspended GaN microstructures
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p. 670-672
Yang, Zhen Chuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Conference paper
Two-dimensional Electron Gas (2DEG) IDT SAW Devices on AlGaN/GaN Heterostructure
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, p. 1045-1048
Wong, Kingyuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper

2006 28

A physical model for on-chip spiral inductors with accurate substrate modeling
IEEE Transactions on Electron Devices, v. 53, (12), 2006, p. 2942-2948
Huo, X.; Chan, P.C.H.; Chen, K.J.; Luong, H.C. Article
AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
IEEE electron device letters, v. 27, (1), 2006, JAN, p. 10-12
Liu, Jie; Zhou, Yu Gang; Zhang, Jizhi; Lau, Kei May; Chen, Kevin Jing Article
Bandpass filters with reconfigurable transmission zeros using varactor-tuned tapped stubs
IEEE microwave and wireless components letters, v. 16, (5), 2006, MAY, p. 249-251
Zhang, HL; Chen, KJ Article
CAD equivalent-circuit modeling of attenuation and cross-coupling for edge-suspended coplanar waveguides on lossy silicon substrate
IEEE transactions on microwave theory and techniques, v. 54, (5), 2006, MAY, p. 2249-2255
Leung, LLW; Chen, KJ Article
Characterization and Attenuation Mechanisms of CMOS Compatible Micromachined Edge-suspended Coplanar Waveguides on Low-resistivity Silicon Substrate
IEEE Trans. Advanced Packaging,, vol. 29, No. 3, pp. 496-503, Aug. 2006.
Leung, Lydia L.W.; Zhang, J.W.; Hon, W.C.; Chen, Kevin J. Article
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
IEEE transactions on electron devices, v. 53, (9), 2006, SEP, p. 2207-2215
Cai, Yong; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing Article
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
IEEE transactions on electron devices, v. 53, (6), 2006, JUN, p. 1474-1477
Jia, Shuo; Cai, Yong; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Article
Enhancement-mode AlGaN/GaN HEMTs with low on-resistance and low knee-voltage
IEICE transactions on electronics, v. E89C, (7), 2006, JUL, p. 1025-1030
Cai, Yong; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing Article
Enhancement-mode Si3N4/AlGaN/GaN MISHFETs
IEEE electron device letters, v. 27, (10), 2006, OCT, p. 793-795
Wang, Ruonan; Cai, Yong; Tang, Chi-Wai; Lau, Kei May; Chen, Kevin Jing Article
Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique
PHYSICA STATUS SOLIDI a-applications and Materials science, v. 203, (7), 2006, MAY, p. 1712-1715
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Article
GaN-on-pattemed-silicon (GPS) technique for fabrication of GaN-based MEMS
Sensors and Actuators a-physical, v. 130, (Sp. Iss. SI), 2006, AUG 14, p. 371-378
Yang, Zhenchuan; Wang, Ruonan; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin J. Article
Isoelectronic indium-surfactant-doped Al0.3Ga0.7N/GaN high electron mobility transistors
Applied physics letters, v. 88, (12), 2006, MAR 20
Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing; Lau, Kei May Article
Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique
Applied physics letters, v. 88, (4), 2006, JAN 23, article number 041913
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Article
Miniaturized coplanar waveguide bandpass filters using multisection stepped-impedance resonators
IEEE transactions on microwave theory and techniques, v. 54, (3), 2006, MAR, p. 1090-1095
Zhang, HL; Chen, KJ Article
Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment
IEEE transactions on electron devices, v. 53, (9), 2006, SEP, p. 2223-2230
Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE electron device letters, v. 27, (8), 2006, AUG, p. 633-635
Wang, Ruonan; Cai, Yong; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Article
A planar integration process for E/D-mode AlGaN/GaN HEMT DCFL integrated circuits
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, Article number 4110036, p. 261-264
Wang, Ruonan; Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch
Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2312-2316
Liu, Jie; Zhou, Yugang; Zhu, Jia; Lau, Kei May; Chen, Kevin Jing Conference paper
Analysis of SAW filter fabricated on anisotropic substrate using finite-difference time-domain method
Proceedings - IEEE Ultrasonics Symposium, v. 1, 2006, p. 96-99
Wong, K.Y.; Tam, W.Y.; Chen, K.J. Conference paper
Compact on-chip three-dimensional electromagnetic bandgap structure
IEEE MTT-S International Microwave Symposium Digest, 2006, p. 594-597
Leung, L.L.W.; Chen, K.J. Conference paper
Core Technologies for III-Nitride Integrated Microsensors
6th Emerging Information Technology Conference, Richardson, Texas, USA, Aug 10-13, 2006
Chen, Kevin Jing; Lau, Kei May Conference paper
Enhancement-Mode A1GaN/GaN Metal Insulator Semiconductor HFETs Using Fluoride-Based Plasma Treatment Technique
Int. Workshop on Nitride Semiconductors, Kyoto, Japan, Oct 22-27, 2006
Wang, Ruonan; Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate
Physica status solidi. C, Conferences and critical reviews, v. 3, (6), 2006, p. 2368-2372
Jia, Shuo; Cai, Yong; Wang, Deliang; Zhang, Baoshun; Lau, Kei May; Chen, Kevin Jing Conference paper
GaN MENS by MOCVD Growth of GaN on Patterned Si Substrates and Wet Etching
21th Meeting of the Electrochemical Society, Chicago, Illinois, May 6-10, 2007
Yang, Zhenchuan; Zhang, Baoshun; Chen, Kevin Jing; Lau, Kei May Conference paper
GaN-based Direct-Coupled FET Logic (DCFL) Digital Circuits Operating at 375 oC
2006 Int. Conf. on Solid State Devices and Materials, Yokahama, Japan, Sept 12-15, 2006
Cai, Y.; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor
Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC 2006), 2006, article number 4099867, p. 105-108
Jha, S.K.; Surya, C.; Chen. K.J.; Lau, K.M. Conference paper
Normally-off AlGaN/GaN low-density-drain HEMTs (LDD-HEMT) with enhanced breakdown voltage and suppressed current collapse
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, 2007, p. 257-260
Song, Di; Liu, Jie; Cheng, Zhiqun; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper
Planar integration of SAW filter with HEMT on AlGaN/GaN heterostructure using fluoride-based plasma treatment
Proceedings - IEEE Ultrasonics Symposium, v. 1, 2006, p. 281-284
Wong, Kingyuen; Tang, Chak Wah; Lau, Kei May; Chen, Kevin Jing Conference paper

2005 27

A tri-section stepped-impedance resonator for cross-coupled bandpass filters
IEEE microwave and wireless components letters, v. 15, (6), 2005, JUN, p. 401-403
Zhang, HL; Chen, KJ Article
AlGaN-GaN double-channel HEMTs
IEEE transactions on electron devices, v. 52, (4), 2005, APR, p. 438-446
Chu, Rongming; Zhou, Yu Gang; Liu, Jie; Wang, Deliang; Chen, Kevin Jing; Lau, Kei May Article
AlGaN-GaNHEMTs on patterned silicon (111) substrate
IEEE electron device letters, v. 26, (3), March 2005, p. 130-132
Jia, Shuo; Dikme, Yilmaz Lmaz; Wang, Deliang; Chen, Kevin Jing; Lau, Kei May; Heuken, Michael Article
Broadband microwave noise characteristics of high-linearity composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs
IEEE electron device letters, v. 26, (8), 2005, AUG, p. 521-523
Cheng, Zhiqun; Liu, Jie; Zhou, Yu Gang; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Article
CMOS-compatible micromachining techniques for fabricating high-performance edge-suspended RF microwave passive components on silicon substrate
Journal of micromechanics and microengineering, v. 15, (2), 2005, FEB, p. 328-335
Zhang, JW; Hon, WC; Leung, LLW; Chen, KJ Article
Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition
Journal of Electronic Materials, v. 34, (1), 2005, JAN, p. 112-118
Zhou, Yu Gang; Wang, Deliang; Chu, Rongming; Tang, Chak Wah; Qi, Yundong; Lü, Zhendong; Chen, Kevin Jing; Lau, Kei May Article
Enhanced-performance of AlGaN-GaNHEMTs grown on grooved sapphire substrates
IEEE electron device letters, v. 26, (12), December 2005, p. 870-872
Feng, Zhihong; Cai, Shujun; Chen, Kevin Jing; Lau, Kei May Article
Highly linear A1(0.3)Ga(0.7)N-A1(0.05)Ga(0.95)N-GaN composite-channel HEMTs
IEEE electron device letters, v. 26, (3), 2005, MAR, p. 145-147
Liu, Jie; Zhou, Yu Gang; Chu, Rongming; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Article
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE electron device letters, v. 26, (7), 2005, JUL, p. 435-437
Cai, Yong; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films
Applied physics letters, v. 86, (3), 2005, JAN 17
Cai, Yong; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition
Journal of applied physics, v. 97, (5), 2005, MAR 1
Wang, Deliang; Jia, Shuo; Chen, Kevin Jing; Lau, Kei May; Dikme, Yilmaz Lmaz; Van Gemmern, Philipp; Lin, YC; Kalisch, Holger; Jansen, Rolf H.; Heuken, Michael Article
Microwave characterization and modeling of high aspect ratio through-wafer interconnect vias in silicon substrates
IEEE transactions on microwave theory and techniques, v. 53, (8), 2005, AUG, p. 2472-2480
Leung, LLW; Chen, KJ Article
Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor
IEEE electron device letters, v. 26, (7), 2005, JUL, p. 432-434
Chu, Chun San; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
Monostable-Bistable Transition Resonant Tunneling Logic Gate, MOBILE, Constructed with Monolithic Integration of RTD and FET
Int. Workshop on Future Information Processing Technologies, Porvoo Finland / Sepetember 4-8 1995
Yamamoto, M.; Maezawa, K.; Chen, K.J. Book chapter
A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure
Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, 2005, p. 385-388
Chu, Chun San; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May Conference paper
AlGaN/GaN HEMTs on Grooved Sapphire Substrate,'6th Int. Conf. on Nitride Semiconductors,(ICNS-6)
Bremen, Germany, Aug. 28-Sep. 2, 2005
Feng, ZhiHong; Cai, ShuJin; Chen, Kevin Jing; Lau, Kei May Conference paper
Bandpass and bandstop filters using CMOS-compatible micromachined edge-suspended coplanar waveguides
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 91-94
Zhang, Hualiang; Zhang, Jinwen; Leung, Lydia L.W.; Chen, Kevin J. Conference paper
Compact bandpass filters using slow-wave coplanar waveguide tri-section stepped-impedance resonators
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 2298-2301
Hualiang, Zhang; Chen, Kevin J. Conference paper
Fabrication of Suspended GaN Microstructures Using GaN on Patterned Silicon (GPS) Technique
6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Yang, Z.; Wang, Rong; Jia, Shuo; Wang, Deliang; Zhang, Bao Shun; Chen, Kevin Jing; Lau, Kei May Conference paper
GaN on Patterned Silicon (GPS) technique for fabrication of GaN-based MEMS
Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05, v. 1, 2005, p. 887-890
Yang, Zhenchuan; Wang, Ruonan; Jia, Shuo; Wang, Deliang; Zhang, Baoshun; Chen, Kevin Jing; Lau, Kei May Conference paper
GaN on Patterned Silicon (GPS) technique for GaN-based integrated microsensors
Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 298-301
Yang, Zhen Chuan; Wang, Ruonan; Wang, Deliang; Zhang, Baoshun; Chen, Kevinjing; Lau, Kei May Conference paper
Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth
Physica Status Solidi C: Conferences, v. 2, (7), 2005, p. 2663-2667
Zhou, Yugang; Chu, Rongming; Liu, Jie; Chen, Kevin Jing; Lau, Kei May Conference paper
MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates
2006 International Conference on Compound Semiconductor Manufacturing Technology, Vancouver, BC, Canada, Digest, p.243, April 24-27, 2006.
Tang, Chak Wah; Jiang, L.; Lau, Kei May; Chen, Kevin Jing Conference paper
Monolithic integrated c-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, p. 1112-1115
Cheng, Zhiqun; Cai, Yong; Liu, Jie; Zhou, Yugang; Lau, Kei May; Chen, Kevin Jing Conference paper
Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits
Technical Digest - International Electron Devices Meeting, IEDM, v. 2005, 2005, p. 771-774
Cai, Yong; Cheng, Zhiqun; Tang, Chak Wah; Chen, Kevinjing; Lau, Kei May Conference paper
Reduced Gate-bias dependence of 2DEG mobility in a Composite-Channel HEMT
6th Int. Conf. on Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005
Zhu, Jia; Liu, J.; Zhou, Yu Gang; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Conference paper
Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Device Research Conference - Conference Digest, DRC, v. 2005, 2005, p. 179-180
Cai, Yong; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May Conference paper

2004 18

A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs
Solid-state electronics, v. 48, (10-11), 2004, OCT-NOV, p. 2047-2050
Suligoj, T.; Liu, H.; Sin, JKO; Tsui, K.; Chu, RM; Chen, KJ; Biljanovic, P.; Wang, KL Article
Characterization of GaN grown on patterned Si(111) substrates
Journal of Crystal Growth, v. 272, (1-4), 2004, DEC 10, p. 489-495
Wang, Deliang; Dikme, Yilmaz Lmaz; Jia, Shuo; Chen, Kevin Jing; Lau, Kei May; Van Gemmern, Philipp; Lin, YC; Kalisch, Holger; Jansen, RoIf H.; Heuken, Michael Article
CMOS-compatible micromachined edge-suspended spiral inductors with high Q-factors and self-resonance frequencies
IEEE electron device letters, v. 25, (6), 2004, JUN, p. 363-365
Chen, KJ; Hon, WC; Zhang, JW; Leung, LLW Article
High-performance large-inductance embedded inductors in thin array plastic packaging (TAPP) for RF system-in-package applications
IEEE microwave and wireless components letters, v. 14, (9), 2004, SEP, p. 449-451
Chen, KJ; Chan, KW; Wong, MKW; Fok, NMK; Kwan, KKP; Fan, NCH Article
Low-loss coplanar waveguides interconnects on low-resistivity silicon substrate
IEEE transactions on components and packaging technologies, v. 27, (3), 2004, SEP, p. 507-512
Leung, LLW; Hon, WC; Chen, KJ Article
Low-loss microwave filters on CMOS-grade standard silicon substrate with low-k BCB dielectric
Microwave and optical technology letters, v. 40, (1), 2004, JAN 5, p. 9-11
Leung, LLW; Chen, KJ; Huo, X.; Chan, PCH Article
Accurate modeling of lossy silicon substrate for on-chip inductors and transformers design
IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers, 2004, p. 627-630
Huo, X.; Chen, K.J.; Luong, H.; Chan, P.C.H. Conference paper
Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity
Technical Digest - International Electron Devices Meeting, IEDM, 2004, p. 811-814
Liu, Jie; Zhou, Yugang; Chu, Rongming; Cai, Yong; Chen, Kevin Jing; Lau, Kei May Conference paper
Characterization and modeling of a step-gate-oxide MOSFET for RF power amplifiers
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 1, 2004, p. 345-348
Jia, S.; Tsui, K.K.P.; Liao, X.; Chen, K.J. Conference paper
Fabrication of edge-suspended microwave passive components using CMOS-compatible micromachining
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 3, 2004, p. 1695-1698
Zhang, J.; Hon, W.C.; Leung, L.L.W.; Chen, K.J. Conference paper
GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v. 3, 2004, p. 2257-2260
Chu, Chun San; Zhou, Yugang; Chu, Rongming; Chen, Kevin Jing; Lau, Kei May Conference paper
High-performance CMOS-compatible micromachined edge-suspended coplanar waveguides on low-resistivity silicon substrate
Conference Proceedings- European Microwave Conference, v. 1, 2004, p. 45-48
Leung, L.L.W.; Zhang, J.; Hon, W.C.; Chen, K.J. Conference paper
High-performance edge-suspended spiral inductors and CPWS on CMOS-grade silicon substrates
2004 4th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2004, 2004, p. 586-589
Zhang, J.; Hon, W.C.; Leung, L.L.W.; Chen, K.J. Conference paper
High-performance low-cost embedded inductors using thin array plastic packaging (TAPP) for RF/microwave applications
Conference Proceedings- European Microwave Conference, v. 2, 2004, p. 519-522
Wong, M.; Fok, N.; Kwan, K.; Fan, N.; Chan, K.W.; Chen, K.J. Conference paper
High-Q CMOS-compatible micromachined edge-suspended spiral inductors
IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers, 2004, p. 263-266
Hon, W.C.; Zhang, J.; Leung, L.L.W.; Chen, K.J. Conference paper
Microwave characterization of high aspect ratio through-wafer interconnect vias in silicon substrates
IEEE MTT-S International Microwave Symposium Digest, v. 2, 2004, p. 1197-1200
Leung, L.L.W.; Chen, K.J. Conference paper
Quantitative Stress Characterization in GaN Films grown on patterned Si(111) by Micro-Raman Spectroscopy
2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25
Wang, De Liang; Jia, S.; Chen, Jing Kevin; Dikme, Y.; Van Gemmern, P.; Lin, Y.C.; Heuken, Michael Conference paper
Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT
2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25 2004
Chu, Rongming; Zhou, Yugang; Liu, Jie; Chen, Kevin Jing; Lau, Kei May Conference paper

2003 8

0.5 mu m silicon-on-sapphire metal oxide semiconductor field effect transistor for RF power amplifier applications
Japanese Journal of Applied Physics, v. 42, pt. 1, no. 8, Aug 2003, p. 4982-4986
Tsui, Kenneth; Chen, Kevin J.; Lam, Sang; Chan, Man Sun Article
Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures
Physica Status Solidi C, Vol. 0, (7), 2003, p. 2400-2403
Chu, Rongming; Zhou, Yu Gang; Chen, Kevin Jing; Lau, Kei May Article
Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
IEEE journal of solid-state circuits, v. 38, (2), 2003, FEB, p. 312-318
Chen, KJ; Niu, GF Article
A Low-cost Horizontal Current Bipolar Transistor Technology (HCBT) for the BiCMOS Integration with FinFETs
International Semiconductor Device Research Symposium (ISDRS), Washington D.C., pp. 518-519
Suligoj, T.; Liu, H.; Sin, J.K.O.; Tsui, K.; Chen, K.J.; Biljanovic, P.; Wang, K.L. Conference paper
A step-gate oxide SOI MOSFET for RF power amplifiers in short- and medium-range wireless applications
2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2003, p. 33-36
Liao, XP; Tsui, KKP; Liu, HT; Chen, KJ; Sin, JKO Conference paper
AlGaN/GaN/Graded-AlGaN double heterostructure HEMT
2003 Int. Conf. Solid-State Devices and Materials (SSDM2003), Tokyo, Japan, Sepetmber 16-18 2003, p. 918-919
Zhou, Y.G.; Chu, R.M.; Chen, K.J.; Lau, K.M. Conference paper
Silicon-on-Organic Integration of a 2.4 GHz VCO Using High Q Copper Inductors and Solder-bumped Flip Chip Technology
Proceedings of the Custom Integrated Circuits Conference, 2003, p. 537-540
Huo, X.; Xiao, G.W.; Chen, K.J.; Chan, P.C.H. Conference paper
Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors
2003 Electronic Material Conference (EMC2003), Salt Lake City, Utah, USA, June 25-27 2003, p. 85
Chu, Rongming; Zhou, Yugang; Chen, Kevin Jing; Lau, Kei May Conference paper

2002 5

Silicon-based high-Q inductors incorporating electroplated copper and low-K BCB dielectric
IEEE electron device letters, v. 23, (9), 2002, SEP, p. 520-522
Huo, X.; Chen, KJ; Chan, PCH Article
High-performance microwave passive components on silicon substrate
2002 3RD INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 2002, p. 263-266
Chen, KJ; Huo, X.; Leung, LLW; Chan, PCH Conference paper
High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer
IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2002, p. 403-406
Huo, X.; Chen, KJ; Chan, PCH Conference paper
High-Q copper inductors on standard silicon substrate with a low-K BCB dielectric layer
IEEE MTT-S International Microwave Symposium digest, 2002, p. 513-516
Xiao, H.; Chen, KJ; Chan, PCH Conference paper
RF Power Characteristics of Thin Film Silicon-on-Sapphire MOSFET
International Conference on Solid State Devices and Materials, Nagoya, Japan, September 17-20, pp. 594-595
Tsui, Kin Pun; Chen, Kevin J.; Lam, Sang; Chan, Mansun Conference paper

2001 1

On-Chip Microwave Filters on Standard Silicon Substrate Incorporating a Low-k BCB Dielectric Layer
European Microwave Conference at Milan, Italy
Leung, Lydia L.W.; Chen, Kevin J.; Huo, Xiao; Chan, Philip C.H. Conference paper

2000 2

Design and fabrication of reflective nematic displays with only one polarizer
Acta photonica sinica=光子学报, v. 29, (8), August 2000, p. 692-702
Yu, Feihong; Wang, Qian; Pan, Weimin; Chen, Jun; Guo, Haicheng Article
Experimental realization of reflective bistable cholesteric liquid crystal displays with new driving scheme and low driving voltage
光子學報=Acta photonica sinica, v. 29, (5), May 2000, p. 420-425
Yu, Feihong; Wang, Qian; Pan, Weimin; Gong, Ye; Chen, Huiguang; Chen, Jun; Guo, Haicheng Article

1999 2

A Symmetric Structure Based on Resonant Tunneling Diodes for Vision Chips
1999 National Symposium on Circuit and Systems (NSCAS'99), November 24 1999
Zhang, Bin; Chen, K.J.; Ruan, Gang; Chen, Richard M.M. Conference paper
Novel RTD-HEMT-RTD structure based on simulations
Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, 1999, p. 178-181
Zhang, Bin; Chen, Kevin J.; Gang, Ruan; Chen, Richard M.M. Conference paper

1998 1

Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multilevel output
IEEE journal of solid-state circuits, v. 33, (2), 1998, p. 268-274
Waho, T.; Chen, K.J.; Yamamoto, M. Article

1997 5

A novel functional logic circuit using resonant-tunneling devices for multiple-valued logic applications
Japanese Journal of Applied Physics, v. 36, pt. 1, no.3B, 1997, p. 1818-1821
Waho, Takao; Chen, Kevin J.; Yamamoto, Masafumi Article
High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMT's)
IEEE Transactions on Electron Devices, v. 44, (11), November 1997, p. 2038-2040
Chen, Jing; Maezawa, Koichi; Yamamoto, Masafumi Article
Circuit modeling of programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
Proceedings - IEEE International Symposium on Circuits and Systems, v. 3, 1997, p. 1628-1631
Niu, G.F.; Chen, K.J.; Chen, R.M.M.; Ruan, G.; Waho, T.; Maezawa, K.; Yamamoto, M. Conference paper
Microwave-frequency operation of resonant tunneling high electron mobility transistors
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1997, p. 106-109
Chen, Kevin J. Conference paper
Small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)
Asia-Pacific Microwave Conference Proceedings, APMC, v. 2, 1997, p. 529-532
Chen, Kevin J. Conference paper

1996 15

A novel multiple-valued logic gate using resonant tunneling devices
IEEE electron device letters, v. 17, (5), 1996, p. 223-225
Waho, T.; Chen, K.J.; Yamamoto, M. Article
An exclusive-OR logic circuit based on controlled quenching of series-connected negative differential resistance devices
IEEE electron device letters, v. 17, (6), 1996, p. 309-311
Chen, K.J.; Waho, T.; Maezawa, K.; Yamamoto, M. Article
Device technology for monolithic integration of inp-based resonant tunneling diodes and hemts
IEICE transactions on electronics, v. E79C, (11), 1996, p. 1515-1523
Chen, K.J.; Maezawa, K.; Waho, T.; Yamamoto, M. Article
Frequency multipliers using InP-based resonant-tunneling high electron mobility transistors
IEEE electron device letters, v. 17, (5), 1996, p. 235-238
Chen, K.J.; Yamamoto, M. Article
High-performance InP-based enhancement-mode HEMT's using non-alloyed ohmic contacts and Pt-based buried gate technology
IEEE Trans. on Electron Devices, v. 43, (2),1996, Feb, p. 252-257
Chen, K.J.; Enoki, T.; Maezawa, K.; Arai, K.; Yamamoto, M. Article
InP-based high-performance monostable-bistable transition logic element (MOBILE): An intelligent logic gate featuring weighted-sum threshold operations
Japanese Journal of Applied Physics, v. 35, pt. 1, no. 2B, 1996, p. 1172-1177
Chen, Kevin J.; Maezawa, K.; Yamamoto, M. Article
InP-based high-performance monostable-bistable transition logic elements (MOBILE'S) using integrated multiple-input resonant-tunneling devices
IEEE electron device letters, v. 17, (3), 1996, p. 127-129
Chen, K.J.; Maezawa, K.; Yamamoto, M. Article
A novel functional logic gate using resonant-tunneling devices for multiple-valued loic applications
Extended Abst.1996 Int. Conf. on Solid State Devices and Materials (SSDM 96), Yokohama Japan, Auguest 1996 p. 740-742
Waho, T.; Chen, K.J.; Yamamoto, M. Conference paper
A variable function logic gate based on controlled quenching of series connected resonant tunneling devices
Proc. of the 1996 Electronics Society Conference of IEICE, Kanazawa Japan, Sepetmber 1996, p.111
Chen, K.J.; Waho, T.; Maezawa, K.; Yamamoto, M. Conference paper
High frequency characterization and circuit applications of resonant-tunneling high electron mobility transistors (RTHEMTs)
Extended Abstracts of the 44th Spring Meeting (1996), The Jap. Soc. of Appl. Phys., Saitama Japan, March 1996, p. 1307, vol.3
Chen, K.J.; Maezawa, K.; Yamamoto, M. Conference paper
InP-based ultrafast resonant tunneling high electron mobility transistors (RTHEMTs): novel I-V characteristics and circuitapplications
Proc. of the 1996 IEICE general conference, Tokyo Japan, March 1996, p.123
Chen, K.J.; Akeyoshi, T.; Maezawa, K. Conference paper
Literal gate using resonant-tunneling devices
International Symposium on Multiple-Valued Logic (ISMVL), 1996, p. 68-73
Waho, T.; Chen, K.J.; Yamamoto, M. Conference paper
Novel ultrafast functional device: resonant tunneling high electron mobility transistor
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 1996, p. 60-63
Chen, Kevin J.; Maezawa, K.; Yamamoto, M. Conference paper
Programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
Annual Device Research Conference Digest, 1996, p. 170-171
Chen, Kevin J.; Waho, Takao; Maezawa, Koichi; Yamamoto, Masafumi Conference paper
Quantum functional circuits using series-connected resonant tunneling devices
Proc. of the 1996 Electronics Society Conference of IEICE, Kanazawa Japan, September 1996, p. 251-252
Yamamoto, M.; Maezawa, K.; Waho, T.; Chen, K.J. Conference paper

1995 8

Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications
Electronics letters, v. 31, (11), 1995, p. 925-927
Chen, K.J.; Maezawa, K.; Arai, K.; Yamamoto, M.; Enoki, T. Article
Monolithic integration of resonant tunneling diodes and FET's for monostable-bistable transition logic elements (MOBILE's)
IEEE electron device letters, v. 16, (2), 1995, p. 70-73
Chen, Kevin J.; Akeyoshi, Tomoyuki; Maezawa, Koichi Article
Monostable-bistable transition logic elements (MOBILEs) based on monolithic integration of resonant tunneling diodes and FETs
Japanese Journal of Applied Physics, v. 34, pt. 1, no. 2B, 1995, p. 1199-1203
Chen, Kevin J.; Akeyoshi, Tomoyuki; Maezawa, Koichi Article
Novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor
Applied physics letters, v. 67, 1995, p. 3608-3610
Chen, K.J.; Maezawa, K.; Yamamoto, M. Article
A Unified BSIM I-V Model for Circuit Simulation
1995 International Device Research Symposium Proceeding, Virginia, December 1995, p. 603-606
Cheng, Y.; Hu,Chenming; Chen, Kevin J.; Chan, Man Sun; Jeng, M.C.; Liu, Z.H.; Huang, J.H.; Ko, Ping Keung Conference paper
High-performance enhancement-mode InAlAs/InGaAs HEMT's using non-alloyed ohmic contact and Pt-based buried-gate
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1995, p. 428-431
Chen, Kevin J.; Enoki, Takatomo; Maezawa, Koichi; Arai, Kunihiro; Yamamoto, Masafumi Conference paper
Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications
Technical digest - International Electron Devices Meeting, 1995, p. 379-382
Chen, Kevin J.; Maezawa, Koichi; Yamamoto, Masafumi Conference paper
Reset-set flip-flop based on a novel approach to modulating resoant-tunneling current with FETs
Proc. of the 1995 IEICE general conference, Fukuoka Japan, March 1995, p. 130, vol. 2
Chen, K.J.; Akeyoshi, T.; Maezawa, K. Conference paper

1994 2

Reset-set flipflop based on a novel approach of modulating resonant-tunneling current with FET gates
Electronics letters, v. 30, (21), 1994, p. 1805-1806
Chen, K.J.; Akeyoshi, T.; Maezawa, K. Article
Monolithic integration of resonant tunneling diodes and FETs for Monostable-Bistable Transition Logic Elements (MOBILEs)
Extended Abstracts of the 55th Autumn Meeting (1994) The Jap. Soc. of Appl. Phys., Nagoya Japan, September 1994, p. 1059, vol. 3
Chen, K.J.; Akeyoshi, T.; Maezawa, K. Conference paper

1993 2

Single transistor static memory cell: Circuit application of a new quantum transistor
Applied Physics Letters, v. 62, 1993, p. 96-98
Chen, K.J.; Yang, C.H.; Wilson, R.A.; Wood, C.E.C. Article
Dynamics of energy and phase relaxation in ultrafast resonant tunneling transistors
American Physical Society annualmeeting, Seattle Washington, March, 1993
Chen, K.J.; Yang, C.H.; Wilson, R.A. Conference paper

1992 5

Modeling of a new field-effect resonant tunneling transistor
Journal of Applied Physics, v. 71, (3), 1992, p. 1537-1539
Chen, K.J.; Yang, C.H. Article
Observation of the negative persistent photoconductivity in an n-channel GaAs/AlxGa1-xAs single heterojunction
Applied Physics Letters, v. 60, (17), 1992, p. 2113-2115
Chen, K.J.; Yang, C.H.; Wilson, R.A. Article
Observation of the negative persistent photoconductivity in an n-channel GaAs/AlxGa1-xAs single heterojunction
American Physical Society annual meeting, Indianapolis Indiana, March 1992
Chen, K.J.; Yang, C.H.; Wilson, R.A. Conference paper
Resonant tunneling between two- and three-dimensions: modeling of tunneling diodes and tunneling transistors
American Physical Societyannual meeting, Cincinnati Ohio, March, 1991
Chen, K.J.; Yang, C.H. Conference paper
Single transistor static memory cell: circuit application of a new quantum transistor
1992 International Conference on Solid State Devices and Materials (SSDM 92), Tsukuba Japan, 1992, p. 741-743
Yang, C.H.; Chen, K.J.; Wilson, R.A.; Wood, C.E.C. Conference paper

1991 2

On the intrinsic bistability in resonant tunneling structures: observation of the area and temperature dependence of hysteresis
Journal of Applied Physics, v. 70, (4), 1991, p. 2473-2475
Chen, J.G.; Chen, K.J.; Wilson, R.A.; Johnson, W.; Yang, C.H. Article
The I-V characteristics of doublebarrier resonant tunneling diodes: observation and calculation on their temperature dependence and asymmetry
Journal of Applied Physics, v. 70, (6), 1991, p. 3131-3136
Chen, K.J.; Chen, J.G.; Yang, C.H.; Wilson, R.A. Article


No Publications






Teaching Assignment

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2021-22 Winter 0 2021-22 Fall 3 2020-21 Summer 1 2020-21 Spring 4 2020-21 Winter 0 2020-21 Fall 3

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ELEC2910 Academic and Professional Development I
ELEC3910 Academic and Professional Development II
ELEC5180 RF/Microwave Circuit Design and Measurement


ELEC4940C Independent Study


ELEC2400 Electronic Circuits
ELEC2910 Academic and Professional Development I
ELEC3910 Academic and Professional Development II
ELEC4901 Final Year Thesis


ELEC2910 Academic and Professional Development I
ELEC3910 Academic and Professional Development II
ELEC5180 RF/Microwave Circuit Design and Measurement


No Teaching Assignments


No Teaching Assignments






Research Postgraduate (RPG) Supervision From January 2019 to December 2022 (As of 30 January 2022)

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All Supervisions Current RPGs Graduated RPGs

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Current RPGs

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Doctor of Philosophy GENG, Yutao
Electronic and Computer Engineering( 2021 - )

SHU, Ji
Electronic and Computer Engineering( 2021 - )

CHEN, Junting
Electronic and Computer Engineering( 2020 - )

CHENG, Yan
Electronic and Computer Engineering( 2020 - )

LIAO, Hang
Electronic and Computer Engineering( 2020 - )

NG, Yat Hon
Electronic and Computer Engineering( 2020 - )

CHEN, Tao
Electronic and Computer Engineering( 2019 - )

FENG, Sirui
Electronic and Computer Engineering( 2019 - )

SUN, Jiahui
Electronic and Computer Engineering( 2018 - )

ZHANG, Li
Electronic and Computer Engineering( 2018 - )

XU, Han
Electronic and Computer Engineering( 2017 - )

ZHONG, Kailun
Electronic and Computer Engineering( 2017 - )

SONG, Wenjie
Electronic and Computer Engineering( 2014 - )

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Master of Philosophy AHN, Jaemoo
Electronic and Computer Engineering( 2021 - )

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Graduated RPGs

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Doctor of Philosophy YANG, Song
Electronic and Computer Engineering( Completed in 2021 )

ZHENG, Zheyang
Electronic and Computer Engineering( Completed in 2021 )

HE, Jiabei
Electronic and Computer Engineering( Completed in 2020 )

WANG, Yuru
Electronic and Computer Engineering( Completed in 2020 )

LEI, Jiacheng
Electronic and Computer Engineering( Completed in 2019 )









ProjectsFrom January 2020 to December 2022

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All Projects 13 Leading Projects 7 Participating Projects 6

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A High-accuracy Wafer Polisher and Bonders for Heterogeneous Integration


用於異質性整合的高精度磨片機和鍵合機 Participating


RGC - Collaborative Research Fund


Project Team (HKUST)
POON Andrew Wing On (Lead)
CHAN Man Sun
CHEN Kevin Jing
FAN Zhiyong
LAU Kei May
LEE Ricky Shi-wei
LEE Yi-Kuen
LI Zhigang
QIU Huihe
SRIVASTAVA Abhishek Kumar
WONG Man
YE Wenjing
YOBAS Levent
YU Hongyu


2021 -




p-channel MOSFET technology based on GaN-on-Si p-GaN gate power HEMT platform: toward high-functionality high-efficiency GaN power integration


基于硅基p型柵氮化鎵功率器件技術平臺的p溝道MOSFET技術研究：通往高性能高能效的氮化鎵功率集成 Leading


Shenzhen Science and Technology Innovation Committee


Project Team (HKUST)
CHEN Kevin Jing (Lead)


2021 -




Hong Kong Center of AI, Robotics and Electronics (HK CARE) for Prefabricated Construction


N/A Participating


Innovation and Technology Fund


Project Team (HKUST)
LI Zexiang (Lead)
CHEN Kevin Jing
CHEN Lei
CHEN Qifeng
CHENG Jack Chin Pang
CHENG Tim Kwang-Ting
FAN Zhiyong
LEE Yi-Kuen
LEUNG Winnie Suk Wai
LIU Ming
QIU Li
QUAN Long
SEO Jungwon
SHEN Shaojie
WANG Michael Yu
WANG Yang
ZHANG Qian


2020 -




Key Technology and Applications of 8-inch GaN-on-Si Device for Power Amplifiers in 5G Communication


面向5G通信應用的8英寸硅襯底氮化鎵基射頻功率放大器件的關鍵技術及應用研究 Participating


Department of Science and Technology of Guangdong Province


Project Team (HKUST)
CHEN Kevin Jing


2020 -




Semiconducting Gate Field-Effect Transistors based on 2D/3D Van der Waals Heterostructures


基於二維/三維范德華異質結的半導體柵極場效應電晶體 Leading


RGC - General Research Fund


Project Team (HKUST)
CHEN Kevin Jing (Lead)


2020 -




Center for Wide-bandgap Semiconductor Power Electronics Research


寬禁帶半導體功率電子研究中心 Leading


Research Impact Fund


Project Team (HKUST)
CHEN Kevin Jing (Lead)
LAU Kei May
SIN Johnny Kin On


2019 -




Research on a GaN/SiC Hybrid Field Effect Transistor


基20170184集成氮化鎵與碳化硅的混合場效應晶體管技術研究 Leading


Shenzhen Science and Technology Innovation Committee


Project Team (HKUST)
CHEN Kevin Jing (Lead)
HUANG Baoling


2018 -




Research on performance improvement of UVC LED with advanced material technology


用先進材料技術提高UVC LED關鍵性能的研究 Participating


Nanhai People's Government of Foshan


Project Team (HKUST)
CHEN Kevin Jing


2018 - 2021




Reliability Evaluation and Testing Platform for High-Speed GaN Power-Switching Devices


GaN高速功率開關器件的可靠性評估及測試平臺 Leading


InnoScience (Zhuhai) Technology Co., Ltd., Innovation and Technology Fund


Project Team (HKUST)
CHEN Kevin Jing (Lead)


2018 - 2020




Critical Technologies for Novel GaN Power Devices


GaN基新型電力電子器件關鍵技術-課題二：高耐壓GaN基垂直結構功率器件 Participating


Ministry of Science and Technology of the People's Republic of China


Project Team (HKUST)
CHEN Kevin Jing


2017 - 2021




Investigation on feasible methods to control the electron traps in GaN power electronic devices


基20160046 氮化鎵電力電子器件中電子陷阱抑制方法研究 Leading


Shenzhen Science and Technology Innovation Committee


Project Team (HKUST)
CHEN Kevin Jing (Lead)


2016 - 2020




Monolithically integrated current-collapse-free, 600V D-mode and E-mode FETs based on III-Nitride materials Leading


Texas Instruments Incorporated


Project Team (HKUST)
CHEN Kevin Jing (Lead)


2013 -




State Key Laboratory of Advanced Displays and Optoelectronics Technologies (The Hong Kong University of Science and Technology)


先進顯示與光電子技術國家重點實驗室（香港科技大學） Participating


Innovation and Technology Fund


Project Team (HKUST)
WONG Man (Lead)
CHAN Che Ting
CHAN Man Sun
CHEN Kevin Jing
FAN Zhiyong
KWOK Hoi Sing
LAU Kei May
LEE Ricky Shi-wei
POON Andrew Wing On
QUAN Long
SHENG Ping
TSUI Chi Ying
WONG Kam Sing
YUAN George Jie
YUE Chik Patrick


2013 -