Dr.LING, Francis Chi Chung
Associate Professor, Department of Physics, Department of Physics, Faculty of Science, HKU
B.Sc., M.Phil., Ph.D. HKU; C.Phys.; M.IEEE; F.Inst.P.
WEBSITE[javascript protected email address]
2241 5248
2559 9152
Room 417, CYM Physics Building, The University of Hong Kong, Pokfulam Road, Hong Kong
Current Research
Experimental Condensed Matter and Material Science Group:Materials Science -Defects characterization and engineering of functional materialsThe current focused interests of the Material Physics Laboratory include:(1) Defects in semiconductors: characterizations and identifications, defects influence on materials electrical, optical and magnetic properties, defect control, defects at semiconductor junctions;
(2) Electrical and optical properties of semiconductor system: deep level transient spectroscopy, temperature dependent Hall measurement, IV and CV measurements, luminescence spectroscopy;
(3) Positron annihilation spectroscopic study of vacancy type defects: These research activities are performed with the positron beam line located at the electron LINAC ELBE, Helmoltz Zentrum Dresden Rossendorf, Germany;
(4) Defects in functional oxides and wide band-gap materials: Tailoring electrical, optoelectronic, and magnetic properties of these materials via defect engineering.
Research Interest
Defects in SemiconductorsElectrical and Optical Properties of Semiconductors
Carrier Transport in Semiconductors
Semiconductor Junctions
Positron Annihilation Spectroscopy
Deep Level Transient Spectroscopy
Representative Publications
“Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition”, Zilan Wang, Shichen Su,Francis Chi-Chung Ling, W. Anwand, and A. Wagner,J. Appl. Phys.,116, 033508 (2014)“Impedance analysis of secondary phases in a Co-implanted ZnO single crystal”, M. Younas, L. L. Zou, M. Nadeem, Naeem-ur-Rehman, S. C. Su, Z. L. Wang, W. Anwand, A. Wagner, J. H. Hao, C. W. Leung, R. Lortz, andF. C. C. Ling,Phys. Chem. Chem. Phys.,16, 16030 (2014)
“Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure”, S.C. Su, H. Zhu, L.X. Zhang, M. He, L.Z. Zhao, S.F. Yu, J.N. Wang andF. C.C. Ling,Appl. Phys. Lett.,103, 131104 (2013)
“Current transport studies of ZnO/p-Si heterostructures grown by plasma immersion ion implantation and deposition”, X. D. Chen,C. C. Ling, S. Fung, C. D. Beling, Y. F. Mei, Ricky K. Y. Fu, G. G. Siu, Paul K. Chu,Appl. Phys. Lett.,88, 132104 (2006)
“Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E2”, X.D. Chen, C.L. Yang, M. Gong, W.K. Ge, S. Fung, C.D. Beling, J.N. Wang, M.K. Lui andC.C. Ling,Phys. Rev. Lett.,92, 125504 (2004)
