P.T. Lai

B.Sc. (Eng.), Ph.D. H.K.; M.I.E.E.E.
Email:
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Tel.: 3917 2691
Office: CB 505

P.T. Lai

Professor

Research Interests

Semiconductor processing; Device physics, modeling and simulation; Integrated sensors.
Prof. Lai’s Ph.D. research at the University of Hong Kong was related to the design of small-sized MOS transistor with emphasis on narrow-channel effects. The work involved the development of both analytical and numerical models. Worked as a Post-doctoral fellow : i) proposed and implemented a novel self-aligned structure for bipolar transistor, ii) designed and implemented an advanced poly-emitter bipolar process with emphasis on self-alignment and trench isolation.
His current research interests are on thin gate dielectrics for Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based on Si, SiC, GaN, Ge, organics, and on microsensors for detecting gases, heat, light, and flow.
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Selected Publications

J.P. Xu, P.T. Lai, and Y.C. Cheng, “Dynamic-stress-induced enhanced
degradation of 1/f noise in n-MOSFET’s”, IEEE Trans. Electron Devices, vol.
ED-47, pp. 109-112, Jan 2000.
J.P. Xu, P.T. Lai, C.L. Chan and Y.C. Cheng, “Improved Performance and
Reliability of N2O-Grown Oxynitride on 6H-SiC “, IEEE Electron Device
Letters, Vol. 21, pp. 298-300, Jun 2000.
P.T. Lai, J.P. Xu and C. L. Chan, “Effects of Wet N2O Oxidation on
Interface Properties of 6H-SiC MOS Capacitors”, IEEE Electron Device
Letters, Vol. 23, pp. 410-412, July 2002.
J.P. Xu, P.T. Lai, D.G. Zhong and C. L. Chan, “Improved
hydrogen-sensitive properties of MISiC Schottky sensor with thin NO-grown
oxynitride as gate insulator”, IEEE Electron Device Letters, Vol. 24, pp.
13-15, Jan 2003.
J.P. Xu, P.T. Lai, C.X. Li, X. Zou, C.L. Chan, “Improved Electrical
Properties of Germanium MOS Capacitors with Gate Dielectric Grown in Wet NO
Ambient”, IEEE Electron Device Letters, Vol. 27, pp. 439-441, Jun 2006.
W.M. Tang, P.T. Lai, C.H. Leung and J.P. Xu, “A comparison of MISiC
Schottky-diode hydrogen sensors made by NO, N2O or NH3 nitridations”, IEEE
Trans. Electron Devices, vol. ED-53, pp. 2378-2383, Sep 2006.
X.F. Zhang, J.P. Xu, P.T. Lai, C.X. Li, “A Physical Model on Scattering
at High-k Dielectric/SiO2 Interface of SiGe p-MOSFETs”, IEEE Trans.
Electron Devices, vol. ED-54, pp. 3097-3102, Nov 2007.
J. P. Xu, X. F. Zhang, C. X. Li, P. T. Lai, , C. L. Chan, “Improved
Electrical Properties of Ge p-MOSFET with HfO2 Gate Dielectric by using
TaOxNy Interlayer”, IEEE Electron Device Letters, Vol. 29, pp. 1155-1158 ,
Oct 2008.
Y. R. Liu, L. F. Deng, R. H. Yao, and P. T. Lai, “Low-Operating-Voltage
Polymer Thin-Film Transistors Based on Poly(3-Hexylthiophene) With Hafnium
Oxide as the Gate Dielectric”, IEEE Trans. on Device And Materials
Reliability, vol. 10, Feb 2010
Y. R. Liu, P. T. Lai, R. H. Yao and L. F. Deng, ” Influence of
Octadecyltrichlorosilane Surface Modification on Electrical Properties of
Polymer Thin-Film Transistors Studied by Capacitance–Voltage Analysis “,
IEEE Trans. on Device And Materials Reliability, vol. 11, pp. 60-65, Mar
2011
L.F. Deng, P.T. Lai, W. B. Chen, J. P. Xu, Y. R. Liu, H. W. Choi, and C.
M. Che, “Effects of Different Annealing Gases on Pentacene OTFT with HfLaO
Gate Dielectric”, IEEE Electron Device Letters, vol. 32, pp. 93-95, Jan
2011
F. Ji, J. P. Xu, P. T. Lai, Senior Member, IEEE, C. X. Li, and J. G. Liu,
“Improved Interfacial Properties of Ge MOS Capacitor with High-k Dielectric
by using TaON/GeON Dual Interlayer”, IEEE Electron Device Letters, vol. 32,
pp. 122-124, Feb 2011

Last updated: September 9th, 2019