JI, Dong
Assistant Professor

Education Background
Ph.D.? University of California Davis? ? ? ?
B.S.? ? Beijing Jiao Tong University? ? ? ? ??

Research Field
Wide bandgap Semiconductors, Power Devices, Optoelectronics
Email
jidong@cuhk.edu.cn
Biography
Dong Ji received his Ph.D. in ECE from the University of California Davis in 2017, B.S. from Beijing Jiao Tong University in 2013. Before he joined Intel Corp in 2019, he was a postdoctoral scholar in Stanford EE. Dr. Ji’s research work focuses on next generation devices based on wide bandgap semiconductors. Dr. Ji has published over 50 research/review/conference articles.

Academic Publications
1, Dong Ji, and Srabanti Chowdhury, 《Wide Bandgap Semiconductor Electronics and Devices》, Chapter 10, “On the progress made in GaN vertical device technology”, World Scientific Publishing, 2019. ISSN: 1793-1274.
2, Srabanti Chowdhury and Dong Ji, 《Gallium Nitride-Enabled High Frequency and High Efficiency Power Conversion》, Chapter 3, “Vertical GaN Transistors for Power Electronics” Springer International Publishing, 05/2018. ISSN: 1558-9412.
3, Srabanti Chowdhury and Dong Ji, 《Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices》, Chapter 5, “Vertical GaN Devices”, Wiley, 12/2019. ISBN: 978-3-527-34710-0.
4, Dong Ji, and Srabanti Chowdhury, “On Impact Ionization and Avalanche in Gallium Nitride”, Applied Physics Letters, Nov. 2020.
5 Dong Ji, S. Li, B. Ercan, C. Ren, and Srabanti Chowdhury, “Design and Fabrication of Ion-implanted Moat Etch Termination Resulting in 0.7 m?·cm²/1500V GaN Diodes,” IEEE Electron Device Letters, vol. 41, no. 2, pp. 264-267, 2020.
6, Dong Ji, Burcu Ercan, G. Benson, A. Newaz, and Srabanti Chowdhury, “60A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K,” Applied Physics Letters, vol. 116, no. 21, 211102, 2020.
7, Dong Ji, Burcu Ercan, and Srabanti Chowdhury, “Experimental Determination of Velocity—Electric Field Characteristic of Holes in GaN”, IEEE Electron Device Letters, vol. 40, Dec. 2019.
8, Dong Ji, Burcu Ercan, and Srabanti Chowdhury, “Experimental Determination of Impact Ionization Coefficients of Electrons and Holes in Gallium Nitride Using Homojunction Structures,” Applied Physics Letters, 117, 7, 073503, Aug. 2019. (Editor’s Pick)
9, Dong Ji, Wenwen Li, and Srabanti Chowdhury, “A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs,” IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 4271-4275, Sept. 2018.
10, Dong Ji, Wenwen Li, Anchal Agarwal, Silvia H. Chan, Jeffrey Haller, Davide Bisi, Michelle Labrecque, Chirag Gupta, Bill Cruse, Rakesh Lal, Stacia Keller, Umesh K. Mishra, and Srabanti Chowdhury, “Improved Dynamic Ron of GaN vertical trench MOSFETs Using TMAH Wet Etch,” IEEE Electron Device Letters, vol. 39, no. 7, July 2018.
11 Dong Ji, Anchal Agarwal, Haoran Li, Wenwen Li, Stacia Keller, 880V/2.7 mΩ· cm2 MIS Gate Trench CAVET on Bulk GaN Substrates,” IEEE Electron Device Letters, vol. 39, no. 6, pp. 863-865, June 2018.
12, Dong Ji, Chirag Gupta, Anchal Agarwal, Silvia H. Chan, Cory Lund, Wenwen Li, Stacia Keller, Umesh K. Mishra, and S. Chowdhury, “Large Area Normally Off In-Situ Oxide, GaN Interlayer Based Vertical Trench MOSFET (OG-FET),” IEEE Electron Device Letters, vol. 39, no. 5, pp. 711-715, May 2018.
13, Dong Ji, Anchal Agarwal, Wenwen Li, Stacia Keller, and Srabanti Chowdhury, “Demonstration of GaN current aperture vertical electron transistor with aperture region formed using ion implantation,” IEEE Transactions on Electron Devices, vol. 64, no. 2, pp. 483-487, Feb. 2018.
14, Dong Ji, C. Gupta, S. Chan, A. Agarwal, W. Li, S. Keller, U. K. Mishra, and S. Chowdhury, “Over 1.4kV performance demonstrated in OG-FET implementing a novel double field-plated geometry and successful scaling of the device,” IEEE International Electron Devices Meeting (IEDM), Dec. 2017.
15, Dong Ji, Matthew A. Laurent, Anchal Agarwal, Wenwen Li, Saptarshi Mandal, Stacia Keller and Srabanti Chowdhury, “Normally Off Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer,” IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 805-808, March 2017.
16, Dong Ji, Jianyi Gao, Yuanzheng Yue, Srabanti Chowdhury, “Dynamic Modeling and Power Loss Analysis of High Frequency Power Switches Based on GaN CAVET,” IEEE Transactions on Electron Devices, vol. 63, no. 10, pp. 4011-4017, 2016.
17, Dong Ji and Srabanti Chowdhury, “Design of 1.2kV Power Switches with Low Ron Using GaN-based Vertical JFET,” IEEE Transactions on Electron Devices, vol. 62, no. 8, 2015.