基本信息
姓名: 郑学军
职称: 教授
单位电话:
电子信箱: zhengxuejun@xtu.edu.cn
办公室: 机械工程学院305
个人主页:
个人简介
个人简介
“薄膜材料及其器件力学” 湘潭大学首个教育部创新团队带头人(2010)，“低维材料及其器件力学”湖南省高校科技创新团队带头人(2009)，教育部********(2009)，国家****基金(2008)，湖南省芙蓉********(2007)。全国百篇优博论文提名奖(2005)。美国匹兹堡大学访问****(2005),湘潭大学一般力学与力学基础博士(2002), 中南大学桥隧结构工程硕士(1989),国防科大飞行器固体力学本科(1985)。
1985年7月-2003年6月，中南大学铁道学院任助教、讲师、副教授。2003年6月-2014年10月，湘潭大学教授、博士生导师，2006年10月-2014年10月，任湘潭大学材料与光电物理学院副院长。2003年6月-2011年10月，任湘潭大学“低维材料及其应用技术教育部重点实验室 ”副主任。2014年10月至今，任湘潭大学机械工程学院学院院长。
研究方向
1、低维纳米材料及其敏感器件
2、半导体纳米结构及微纳光机电系统
3、压电材料及传感元器件
4、铁电薄膜及其存储器
5、微机电工程
科研项目
已主持完成的科研项目：
1、上海市科委纳米专项(11nm**) , 2011-2014年。
2、低维铁电材料的制备、力学表征及其微器件应用，国家自然科学基金项目****基金(**), 2008-2012年。
3、钛酸铋钠基弛豫型无铅压电薄膜及相关性能，国家自然科学基金项目(**), 2009-2011年。
4、自组装半导体压电纳米带及相关性能，国家自然科学基金项目(**), 2007-2009年。
5、ZnO, ZnS压电纳米带及物理力学性能,国家教育部和湖南省教育厅重点项目,2007-2009年。
6、自组装半导体压电纳米带及相关力学性能,国家自然科学基金(**), 2007-2009年。
7、无铅铁电薄膜及其纳米薄膜微器件，湖南省科技计划重点项目，2005-2007年。
8、铋层状钙钛矿铁电薄膜的制备及其热冲击下断裂失效行为(**),国家自然科学基金项目,2005-2007年。
9、压电薄膜材料的制备及相关物理力学性能,湖南省教育厅青年骨干教师基金项目,2003-2005年。
10、压电薄膜材料的制备及相关物理力学性能,湖南省教育厅青年项目,2003-2005年。
在研主持科研项目:
1、GaN半导体纳米材料的多场耦合失效机理(编号：**), 2013-2016年。
2、薄膜材料及其器件力学 教育部“****计划”奖励计划 教育部创新团队滚动资助项目(IRT_14R48)
3、薄膜材料及器件力学，教育部“****计划”****项目([2009]17)
发明专利
1、基于单个极性半导体纳米带光弹簧的制作方法 郑学军、陈义强、王甲世、姜传斌、龚伦军 国家发明专利, ZL **.2, 2011
2、一种测量纳米材料光致硬化性能的方法 郑学军、王甲世、陈义强、杨博、龚伦军 国家发明专利, ZL **.7, 2011
3、一种实时测量纳米材料光致伸缩性能的方法 郑学军、陈义强、王甲世、龚伦军、余功成 国家发明专利, ZL **.3, 2012
4、一种测量压电材料压电系数d15的准静态方法 郑学军、彭金峰、刘勋、张勇、孙静 国家发明专利, ZL **.7, 2015
5、一种氧化锌纳米线生长所用的催化剂及其应用，王现英、谢澍梵、郑学军 中国专利号：ZL 9.0,2014
6、氧化物稀磁半导体/铁电体异质结构及其制备方法 王金斌、何春、钟向丽、周益春、郑学军 国家发明专利, ZL , 2010
成果获奖
1、薄膜材料及其器件力学 教育部“****计划”奖励计划 教育部创新团队滚动资助项目2014 (排名第一)
2、微纳材料及器件的力学理论设计与性能表征方法，湖南省自然科学二等奖2013 (排名第一)
3、无铅铁电薄膜及其器件的失效与性能调制，湖南省自然科学一等奖2012 (排名第二)
4、指导硕士研究生王甲世获湖南省优秀硕士学位论文(2012)
5、指导硕士研究生郑辉获“湘潭大学第十六届研究生校长优秀奖”(2011)
6、薄膜材料及其器件力学 教育部“****计划”奖励计划 教育部创新团队2010 (排名第一)
7、低维材料及其器件力学 湖南省高校创新团队2010 (排名第一)
8、薄膜材料及器件力学，教育部“****计划”****项目2009
9、低维无机非金属材料及微器件，湖南省“芙蓉****计划”****项目2007
10、掺铕含量对Bi4-xEuxTi3 O12铁电薄膜微结构和铁电性能的影响，湖南省自然科学优秀学术论文一等奖 2008(排名第一)
11、压电薄膜的断裂韧性及激光作用下的破坏机制，全国100篇优秀博士学位论文提名奖2005
12、湖南省优秀博士毕业论文 湖南省人民政府学位委员会湖南省教育厅 2005
13、纳米压痕实验测量Pb(Zr0.52Ti0.48)03铁电薄膜的界面强度，湖南省自然科学优秀学术论文一等奖2004(排名第一)
14、湘潭市2001-2003年度自然科学优秀学术论文一等奖 湘潭市科学技术协会 湘潭市人事局 2004(排名第一)
15、材料力学计算机辅助教学的研究与实践 湖南省优秀教学成果二等奖 1997.7（排名第三）
个人专著
周益春，郑学军，李江宇，2009，材料的宏微观力学性能，高等教育出版社
代表性学术成果
1、K. Zhan, X. J. Zheng*, J. F. Peng, Y. K. Zhu, H. B. Cheng. Effects of potassium content on the electrical and mechanical properties of (Na1-xKx)0.5Bi0.5TiO3 thin films. Cerm. Inter. 4 (2015)，3474-3480 (SCI源刊,影响因子2.086)
2、M. J. Yuan, Y. Zhang, X. J. Zheng, B. Jiang, P. W. Li, S. F. Deng. Humidity sensing properties of K0.5Na0.5NbO3 powder synthesized by metal organic decomposition. Sensors and Actuators B，209 (2015) 252-257 (SCI源刊,影响因子3.84)
3、R. Wang, D. Wang, Y. Zhang, X. J. Zheng*. Humidity sensing properties of Bi0.5(Na0.85K0.15)0.5Ti0.97Zr0.03O3 microspheres: Effect of A and B sites co-substitution. Sensors and Actuators B, 190 (2014)，305-310 (SCI源刊,影响因子3.122)
4、J. F. Peng, X.J Zheng*, Z. H. Dai. Dielectric enhancement of the trilayered Bi3.15Eu0.85Ti3O12/ Bi3.15Nd0.85Ti3O12/Bi3.15Eu0.85Ti3O12 thin film deposited on Pt/Ti/ SiO2/Si substrate. J Mater Sci: Mater Electron 25 (2014), 414-418. (SCI源刊,影响因子1.486)
5、J. F. Peng, X. J. Zheng*, Y. O. Gong, K. Zhan, Z. H. Dai. Effects of Annealing Temperature on the Electric Properties of 0.94(Na0.5Bi0.5)TiO3-0.06BaTiO3 Ferroelectric Thin Film. J. Electron. Mater. 43(2014), 724-731. (SCI源刊,影响因子1.635)
6、X. J. Zheng*, Y. K. Zhu, X. Liu, J. Liu, Y. Zhang, J.G. Chen. Evaluation of Electromechanical Coupling Parameters of Piezoelectric Materials by Using Piezoelectric Cantilever With Coplanar Electrode Structure in Quasi-Stasis. IEEE T. Ultrason. Ferr., 61(2014)，369-375. (SCI源刊,影响因子1.822)
7、X. J. Luo, X. J. Zheng*, D. Wang, Y. Zhang, H. B. Cheng, X. Y. Wang, H. J. Zhuang, Y. L. Lou, The ethanol-sensing properties of porous GaN nanofibers synthesized by electrospinning. Sensors and Actuators B: Chemical., 202(2014)，1010-1018. (SCI源刊,影响因子3.122)
8、X. J. Zheng*, Z. X Zhang, Y. K. Zhu, Analysis of Energy Harvesting Performance ford15Mode Piezoelectric Bimorph in Series Connection Based on Timoshenko Beam Model. IEEE/ASME Tran. Mech. 99(2014)，1-12. (SCI源刊,影响因子3.14)
9、K. Zhan, X. J. Zheng, H. Han, Q. Feng, C. H. Jiang. investigation of cyclic softening behavior of shot peened S30432 austenitic stainless steel by x-ray diffraction method. Surf. Rev. Lett. 6 (2014)，71-76 (SCI源刊,影响因子0.567)
10、D. Wang, W.Q. Niu, M. H. Tan, M. B. Wu, X. J. Zheng, Y. P. Li, N. Tiubaki. Pt Nanocatalysts Supported on Reduced Graphene Oxide for Selective Conversion of Cellulose or Cellobiose to Sorbitol. Chemsuschem. 5(2014)，1398-1406. (SCI源刊,影响因子7.117)
11、Z. Zhu, X. J. Zheng*, D. S. Zhang, J. Gao. Threshold stress of 90° domain switching in the misfit strain–external stress phase diagram. Jap. J. Appl. Phys. 53(2014)，495-501. (SCI源刊,影响因子1.057)
12、Y. C. She, X. J. Zheng, D. L. Wang. Enhancement of four-wave mixing process in a four-level double semiconductor quantum well. Chin. Phys. B. 12 (2014)，194-202. (SCI源刊,影响因子1.392)
13、X. J. Zheng, J.Y. Liu, J. F. Peng, X. Liu, Y. Q. Gong, K. S. Zhou, D. H. Huang. Effect of potassium content on electrostrictive properties of Na0.5Bi0.5TiO3-based relaxor ferroelectric thin ?lms with morphotropic phase boundary. Thin Solid Films, 548 (2013), 118-124. (SCI源刊,影响因子1.884)
14、Y. J. Zhang, X. J. Zheng, F. Jiao, H. P. Hu. The effect of strain and dead layer on the nonlinear electric-mechanical behavior of ferroelectric thin ?lms. Computational Materials Science 77 (2013), 377-383 (SCI源刊,影响因子1.522)
15、Y. W. Tao, X. J. Zheng, W. Liu, S. T. Song, H. Zheng. Determination of the mechanical constants of ZnS nanobelt by combining nanoindentation test and finite element method. International Journal of Solids and Structures, 50 (2013), 487-497. (SCI源刊，影响因子2.076) (力学类1区)
16、Z. Zhu, X. J. Zheng, Z. C. Yang. Nanoscale domain switchings of Bi3.15Dy0.85Ti3O12 thin film under the simultaneous application of polarizing voltage and loading force. J. Appl. Phys. 113 (2013), 104-110. (SCI源刊,影响因子2.497)
17、X. J. Luo, Z. Lou, L. L. Wang, X. J. Zheng,* and Tong Zhang. Fabrication of flower-like ZnO nanosheet and nanorod-assembled hierarchical structures and their enhanced performance in gas sensors. New J. Chem., 37 (2013), 3607-3611 (SCI源刊,影响因子2.966)
18、L. L Wang, X. J. Luo, X. J. Zheng*, R. Wang and T. Zhang. Direct annealing of electrospun synthesized high-performance porous SnO2 hollow nanofibers for gas sensors, RSC Adv. 3 (2013), 9723-9728 (SCI源刊,影响因子2.562)
19、Yanchao She, Xuejun Zheng, Denglong Wang, and Weixi Zhang. Controllable double tunneling induced transparency and solitons formation in a quantum dot molecule. Optics Express 21 (2013), 17392-17403. (SCI源刊,影响因子3.546)
20、Y. Wei, H. B. Cheng, X. Y. Wang, and X. J. Zheng. Evaluation on residual stress in Bi3.15(Eu0.7Nd0.15)Ti3O12 polycrystalline ferroelectric thin film by using the orientation average method. Applied Physics Letters, 101, 901-909 (2012). (SCI源刊,影响因子3.82)
21、Y. Wei, L. H. Xu, Y. W. Tao, X. J. Zheng, J. H. Yang, D. F. Zou, and S. X. Mao. Width-to-thickness ratio dependence on photoplastic effect of ZnS nanobelt. Applied Physics Letters, 101, 901-904 (2012). (SCI源刊,影响因子3.82)
22、L. H. Xu, D. D. Jiang, and X. J. Zheng. Effect of grain orientation in x-ray diffraction pattern on residual stress in polycrystalline ferroelectric thin film. Journal of Applied Physics 112, 513-521 (2012). (SCI源刊,影响因子2.497)
23、X. Liu, X.J. Zheng, J.Y. Liu, K.S. Zhou, D.H. Huang. Effect of annealing temperature on the electrostrictive properties of 0.94(Na0.5Bi0.5)TiO3-0.06BaTiO3 thin films. Journal of Electroceramics, 29(3) (2012), 270-276. (SCI源刊，影响因子1.194)
24、S.T. Song, X.J. Zheng, H. Zheng, W. Liu. Evaluation of engineering/ piezoelectric constants of piezoelectric thin film by combining nanoindentation test with FEM. Computational Materials Science, 63 (2012), 134-144. (SCI源刊，影响因子1.522)
25、Y. Zhang, X. J. Zheng, X. L. Zhong and S. F. Deng. The ethanol sensing characteristics of ZnO thin films with low operating temperatures synthesized by pulsed laser deposition. Measurement Science and Technology, 23 (2012), 105-107. (SCI源刊，影响因子1.352)
26、S.T. Peng, X.J. Zheng, J. Sun, Y. Zhang, L. Zhou, J. H. Zhao, S. F. Deng, M. F. Cao, W. Xiong, K. Peng. Modeling of a micro-cantilevered piezo-actuator considering the buffer layer and electrodes. J. Micromech. Microeng. 22 (2012), 065-075. (SCI源刊，影响因子2.105)
27、J. H. Zhao, X. J. Zheng, L. Zhou, Y. Zhang , J. Sun, W.J. Dong, S.H. Deng, S.T. Peng. Investigation of a d15 mode PZT-51 piezoelectric energy harvester with a series connection structure. Smart Mater. Struct. 21 (2012), 105-109. (SCI源刊，影响因子2.089).
28、Y. Q. Gong, H. Dong, X. J. Zheng, J. F. Peng, X. J. Li, R. J. Huang. Large piezoelectric response of Bi0.5(Na(1?x)Kx)0.5TiO3 thin films near morphotropic phase boundary identified by multi-peak fitting. J. Phys. D: Appl. Phys. 45 (2012), 301-305. (SCI源刊,影响因子2.544)
29、L. Zhou, J. Sun, X. J. Zheng, S. F. Deng, J. H. Zhao, S. T. Peng. Y. Zhang, X. Y. Wang and H. B. Cheng. A model for the energy harvesting performance of shear mode piezoelectric cantilever, Sensors and Actuators A. 179 (2012), 185-192. (SCI源刊,影响因子1.802)
30、J. Sun, X. J. Zheng, W. Li, A model for the electrical characteristics of metal-ferroelectric-insulator-semiconductor field-effect transistor. Current Applied Physics, 12(2012), 760-764.
31、Y. Zhang, X.J. Zheng, X. L. Zhong, S. F. Deng. The ethanol sensing characteristics of ZnO thin films with low operating temperatures synthesized by pulsed laser deposition. Meas. Sci. Technol. 23(2011),105-107.
32、X. J. Zheng, X. C. Cao, J. Sun, B. Yuan, Q. H. Li, Z. Zhu, Y. Zhang, A vacuum pressure sensor based on ZnO nanobelt film, Nanotechnology, 22(2011), 495-501 (1-6).
33、Y. Zhang, X. J. Zheng, T. Zhang, Characterization and humidity sensing properties of Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3 powder synthesized by metal-organic decomposition, Sensors and Actuators B: Chemical, 156(2011), 887-892.
34、J. Sun, X. J. Zheng, J. Cao, W. Li, Interface effects on the characteristics of metal-ferroelectric-insulator-semiconductor ?eld-effect transistor, Semicond. Sci. Technol., 26(2011), 093-097 (1-6).
35、J. Sun, X. J. Zheng, Modeling of MFIS-FETs for the application of ferroelectric random access memory. IEEE Transactions on Electron Devices, 58(2011) 55-59.
36、Z. Zhu, X. J. Zheng, D. D. Jiang, Z. C. Yang, The threshold electric field of 180° domain switching in the misfit strain-external electric field phase diagram. J. Appl. Phys, 110(2011), 032-035.
37、H. Dong, X. J. Zheng, W. Li, Y. Q. Gong, J. F. Peng, Z. Zhu, The dielectric relaxation behavior of (Na0.82K0.18)0.5Bi0.5TiO3 ferroelectric thin film. J. Appl. Phys., 110(2011), 119-124.
38、H. Zheng, X. J. Zheng, S. T. Song, J. Sun, F. Jiao, W. Liu, G. Y. Wang, Evaluation of the elastic modulus of thin film considering the substrate effect and geometry effect of indenter tip. Computational Materials Science, 50(2011), 26-30.
39、Y. Zhang, X. J. Zheng, T. Zhang, J. Sun, Y. Bian, J. Song, Gas sensing properties of coral-like Bi0.5K0.5TiO3 powders synthesized by metal-organic decomposition. Meas. Sci. Technol. 22(2011), 195-205.
40、J. Sun, X. J. Zheng, W. Yin, M. H. Tang, W. Li, Influences of space charge and electrode on the electrical transport through (Ba,Sr)TiO3 thin film capacitors. Applied Surface Science, 257(2011), 4990-4993.
41、B. Yuan, X. J. Zheng, Y. Q. Chen, B. Yang, T. Zhang, High photosensitivity and low dark current of photoconductive semiconductor switch based on ZnO single nanobelt, Solid-State Electronics, 55(2011), 49-53.
42、Y. Q. Chen, Y. F. En, Y. Huang, X. D. Kong, X. J. Zheng, and Y. D. Lu, Effects of surface tension and axis stress on piezoelectric behaviors of ferroelectric nanowires. Applied Physics Letters, 99, (2011), 203106-203108 (SCI源刊，影响因子3.726)
43、Y. Q. Chen, Y. F. En, Y. Huang, X. D. Kong, W. X. Fang, and X. J. Zheng, Effects of Stress and Depolarization on Electrical Behaviors of Ferroelectric Field-Effect Transistor. IEEE ELECTRON DEVICE LETTERS, 99,(2011), 1-3(SCI源刊，影响因子2.714)
44、H. Zheng, X. J. Zheng, J. S. Wang, G. C. Yu, Y. Li, S. T. Song, C. Han, Evaluation the effect of aspect ratio for Young’s modulus of nanobelt using finite element method. Materials and design, 32,(2011), 1407-1413 (SCI源刊，影响因子1.518)
45、J. Sun, X. J. Zheng, W. Yin, M. H. Tang, W. Li, Space-charge-limited leakage current in high dielectric constant and ferroelectric thin films considering the field-dependent permittivity. Appl. Phys. Lett., 97.24 (2010): 242905 (SCI源刊，影响因子3.726)
46、H. Zheng, X. J. Zheng, J. S. Wang, G. C. Yu, Y. Li, S. T. Song, C. Han, Evaluation the effect of aspect ratio for Young’s modulus of nanobelt using finite element method. Materials and design, 32.3 (2011): 1407-1413 (SCI源刊，影响因子1.518)
47、B. Yuan,X. J. Zheng, Y. Q. Chen, B. Yang, T. Zhang, High photosensitivity and low dark current of photoconductive semiconductor switch based on ZnO single nanobelt. Solid-State Electronics, 55, (2011), 49-53. (SCI源刊，影响因子1.422)
48、Y. Q. Chen, X. J. Zheng, W. Li, Modeling of flexoelectric effect on capacitor-voltage and memory window of metal-ferroelectric-insulator-silicon capacitor. Appl. Phys. Lett., 96, (2010), 233501 (1-3) (SCI源刊，影响因子3.726)
49、X. J. Zheng, G. C Yu, Y. Q. Chen, S. X. Mao, T. Zhang, Photoinduced stiffening and photoplastic effect of ZnS individual nanobelt in nanoindentation. J. Appl. Phys., 108, (2010), 094305. (SCI源刊,影响因子2.497)
50、X. J. Zheng, Q. Y. Wu, J. F. Peng, L. He, X. Feng, Y. Q. Chen, D. Z. Zhang, Annealing temperature dependence of effective piezoelectric coefficients for Bi3.15Eu0.85Ti3O12 thin films. J. Mater. Sci., 45, (2010), 3001-3006. (SCI源刊,影响因子1.181)
51、X. J. Zheng, J. F. Peng, Y. Q. Chen, L. He, X. Feng, D. Z. Zhang, L. J. Gong, Q. Y. Wu, Enhancement on effective piezoelectric coefficient of Bi3.25Eu0.75Ti3O12 ferroelectric thin films under moderate annealing temperature. Thin Solid Films, 519,(2010), 714-718. (SCI源刊,影响因子1.884)
52、D. Z. Zhang, X. J. Zheng, X. Feng, T. Zhang, J. Sun, S. H. Dai, L .J. Gong, Y. Q. Gong, L. He, Z. Zhu, J. Huang, X. Xu, Ferro-piezoelectric properties of 0.94(Na0.5Bi0.5)TiO3–0.06BaTiO3 thin film prepared by metal–organic decomposition. Journal of Alloys and Compounds, 504,(2010), 129-133. (SCI源刊，影响因子2.135)
53、J. S. Wang, X. J. Zheng , H. Zheng, S. T. Song, Z. Zhu, Identification of elastic parameters of transversely isotropic thin films by combining nanoindentation and FEM analysis. Computational Materials Science, 49,(2010), 378-385. (SCI源刊，影响因子1.522)
54、Y. Q. Chen, X. J. Zheng, W. Li,Size effect of mechanical behavior for lead-free(Na0.82K0.18)0.5Bi0.5TiO3 nanofibers by nanoindentation. Materials Science and Engineering A, 527.21 (2010): 5462-5466. (SCI源刊，影响因子1.806)
55、Y. Q. Chen, X. J. Zheng, X. Feng, The fabrication of vanadium-doped ZnO piezoelectric nanofiber by electrospinning. Nanotechnology, 21,(2010), 055708. (SCI源刊,影响因子3.446)
56、X. J. Zheng, Y. Q. Chen, T. Zhang, B. Yang, C. B. Jiang, B. Yuan, Z. Zhu, Photoconductive semiconductor switch based on ZnS nanobelts film. Sensors and Actuators B., 147,(2010) , 442-446 (SCI源刊,影响因子3.122)
57、Y. Zhang, X. J. Zheng, T. Zhang, L. J. Gong, S. H. Dai, Y. Q. Chen, Humidity sensing properties of the sensor based on Bi0.5K0.5TiO3 powder. Sensors and Actuators B., 147,(2010), 180-184 (SCI源刊,影响因子3.122)
58、X. J. Zheng, Y. Q. Chen, T. Zhang, C. B. Jiang, B. Yang, B. Yuan, S. X. Mao, W. Li, A photoconductive semiconductor switch based on an individual ZnS nanobelt. Scripta Materialia, 62,(2010), 520-523 (SCI源刊，影响因子2.887)
59、Y. Q. Chen, X. J. Zheng, S. X. Mao, W. Li, Nanoscale mechanical behavior of vanadium doped ZnO piezoelectric nanofiber by nanoindentation technique. J. Appl. Phys., 107,(2010), 094302 (1-5) (SCI源刊,影响因子2.497)
60、Y. Q. Chen, X. J. Zheng, X. Feng, S. H. Dai, D. Z. Zhang, Fabrication of lead-free (Na0.82K0.18)0.5Bi0.5TiO3 piezoelectric nanofiber by electrospinning. Materials Research Bulletin, 45,(2010), 717-721 (SCI源刊,影响因子1.812)
61、X. J. Zheng, Y. F. Rong, D. Z. Zhang, T. Zhang, L. He, X. Feng, Enhancement on effective piezoelectric coefficient d33 of Bi3.15Dy0.85Ti3O12 ferroelectric thin films. Materials Letters, 64,(2010), 618-621 (SCI源刊,影响因子1.748)
62、J. S. Wang, X. J. Zheng, H. Zheng, Z.Zhu, S. T. Song, Evaluation of the substrate effect on indentation behavior of film/substrate system. Applied Surface Science, 256,(2010), 3316-3320 (SCI源刊,影响因子1.576)
63、Z. Zhu, X. J. Zheng, W. Li, Multilayer growth of BaTiO3 thin films via pulsed laser deposition: An energy-dependent kinetic Monte Carlo simulation. Applied Surface Science, 256,(2010), 5876-5881 (SCI源刊,影响因子1.576)
64、X. J. Zheng, S. H. Dai, X. Feng, T. Zhang, D. Z. Zhang, Y. Q. Gong, Y. Q. Chen, L. He, Structural and electrical properties of (Na0.85K0.15)0.5Bi0.5TiO3 thin films deposited on LaNiO3 and Pt bottom electrodes. Applied Surface Science, 256,(2010), 3316-3320 (SCI源刊,影响因子1.576)
65、Y. Q. Chen, X. J. Zheng, L. He, X. Feng, Annealing temperature-dependent piezoelectric properties of Bi3.15Nd0.85Ti3O12 ferroelectric thin films. Phys. Status Solidi A, 207,(2010), 1240-1244 (SCI源刊，影响因子1.205)
66、Y. Q. Gong, X. J. Zheng, L. J. Gong, Y. Ma, D. Z. Zhang, S. H. Dai, X. J. Li, Effects of annealing temperature on microstructure and ferroelectric properties of Bi0.5(Na0.85K0.15)0.5TiO3 thin films. Trans. Nonferrous Met. Soc.
67、H. P. Hu, S. H. Dai, X. J. Zheng, Y. C. Zhou, X. Feng, D. Z. Zhang, L. He, Thermal and piezoelectric properties of Bi3.15Nd0.85Ti3O12 thin film prepared by metal organic decomposition. Trans. Nonferrous Met. Soc.
68、X. J. Zheng, B. Yang , T. Zhang, C. B. Jiang, S. X. Mao, Y. Q. Chen, B. Yuan, Enhancement in ultraviolet optoelectronic performance of photoconductive semiconductor switch based on ZnO nanobelts. Appl. Phys. Lett., 95,(2009), 221106 (1-3) (SCI源刊，影响因子4. 308)
69、Z. Zhu, X. J. Zheng, W. Li, Submonolayer growth of BaTiO3 thin film via pulsed laser deposition: A kinetic Monte Carlo simulation. J. Appl. Phys., 106, (2009), 054105. (SCI源刊,影响因子2.497)
70、Y. Q. Chen, X. J. Zheng, X. Feng, D. Z. Zhang, S. H. Dai, Lead-free piezoelectric (Na0.5Bi0.5)0.94TiO3–Ba0.06TiO3 nanofiber by electrospinning. Phys. Status Solidi RRL., 3, (2009), 290-292 (SCI源刊，影响因子2.147)
71、X. J. Zheng, W. Yin, T. Zhang, Y. Q. Chen, M. H. Tang, J. Sun, Effect of the abnormal electric field induced by the passive layer on imprint failures of ferroelectric capacitors. Phys. Status Solidi RRL., 3, (2009), 251-253 (SCI源刊，影响因子2.147)
72、B. Wu, X. J. Zheng, H. P. Hu, D. H. Li, Y. Ma, Y. C. Zhou, Near tip stress intensity factor for an edge-crack in a Pb(ZrxTi1-x)O3 thin ?lm with 90° domain switching under a continuous laser irradiation. Engineering Fracture Mechanics, 76,(2009), 1811-1821 (SCI源刊，影响因子1.713)
73、D. H. Li, X. J. Zheng, B. Wu, Y. C. Zhou, Fracture analysis of a surface through-thickness crack in PZT thin film under a continuous laser irradiation. Engineering Fracture Mechanics, 76,(2009), 525-532 (SCI源刊，影响因子1.713)
74、J. J. Zhang, J. Sun, X. J. Zheng, A model for the C-V characteristics of the metal–ferroelectric–insulator–semiconductor structure. Solid-State Electronics, 53, (2009), 170-175 (SCI源刊，影响因子1.259)
75、R. Wang, Y. He, T. Zhang, Z. Wang, X. J. Zheng, L. Niu, DC and AC analysis of humidity sensitive properties based on K+ doped nanocrystalline LaCo0.3Fe0.7O3. Sensors and Actuators B: Chemical. 136,(2009), 536-540 (SCI源刊，影响因子3.122)
76、Q. Qi, T. Zhang, L. Liu, X. J. Zheng, Synthesis and toluene sensing properties of SnO2 nano?bers. Sensors and Actuators B: Chemical. 137,(2009), 471-475 (SCI源刊，影响因子3.122)
77、Q. Qi, T. Zhang, S. Wang, X. J. Zheng, Humidity sensing properties of KCl-doped ZnO nanofibers with super-rapid response and recovery. Sensors and Actuators B: Chemical. 137,(2009), 649-655 (SCI源刊，影响因子3.122)
78、Q. Qi, T. Zhang, X. J. Zheng, L. Wan. Preparation and humidity sensing properties of Fe-doped mesoporous silica SBA-15. Sensors and Actuators B: Chemical. 135,(2008), 255-261 (SCI源刊，影响因子3.122)
79、Q. Qi, T. Zhang, L. Liu, X. J. Zheng,, Q. Yu, Y. Zeng, et al. Selective acetone sensor based on dumbbell-like ZnO with rapid response and recovery. Sensors and Actuators B: Chemical. 134,(2008), 166-170 (SCI源刊，影响因子3.122)
80、Q. Qi, T. Zhang, X. J. Zheng, H. Fan, L. Liu, R. Wang, et al. Electrical response of Sm2O3-doped SnO2 to C2H2 and effect of humidity interference. Sensors and Actuators B: Chemical. 134, (2008), 36-42 (SCI源刊，影响因子3.122)
81、X. J. Zheng, J. Sun, J. J. Zhang, M. H. Tang, W. Li, Evaluation of capacitance-voltage characteristic and memory window of metal-ferroelectric-insulator-silicon capacitors. Appl. Phys. Lett., 93,(2008), 213501 (1-3) (SCI源刊，影响因子4. 308)
82、Z. Zhu, X. J. Zheng, W. Li, Kinetic Monte Carlo simulation of RHEED from BaTiO3 thin films. Physica B, 403,(2008), 4074-4078 (SCI源刊，影响因子0. 908)
83、F. Yang, M. H. Tang, Y. C. Zhou, F. Liu, Y. Ma, X. J. Zheng et al. Fatigue mechanism of the ferroelectric perovskite thin films. Appl. Phys. Lett. 92(2) (2008), 022908(1-3). (SCI源刊，影响因子4.127)
84、L. P. Tang, S. H. Xie, X. J. Zheng, et al. Domain switching in ferroelectric ceramics beyond Taylor bound. Mechanics of Materials 40(2008), 362-376. (SCI源刊，影响因子2.106)
85、X. J. Zheng, L. He, M. H. Tang, Y. Ma, J. B. Wang, Q. M. Wang. Enhancement of fatigue endurance and retention characteristic in Bi3.25Eu0.75Ti3O12 thin film. Materials Letters 62 (2008), 2876-2879. (SCI源刊，影响因子1.353)
86、X. J. Zheng Y. G. Lu, L. He, Y. Q. Gong.Nanoscale domain switching in Bi3.15Eu0.85Ti3O12 thin films annealed at different temperature by scanning probe microscopy. Materials Letters 62 (2008), 440-442 (SCI源刊，影响因子1.353)
87、Z. Ye, M. H. Tang, Y. C. Zhou, X. J. Zheng Modeling of imprint in hysteresis loop of ferroelectric thin films with top and bottom interface layers. Appl. Phys. Letts, 90 (2007), 042902 (1-3) (SCI源刊，影响因子4.127)
88、F. Yang, M. H. Tang, Y. C. Zhou, X. J. Zheng, F. Liu, J. X. Tang, J. J. Zhang, J. Zhang, and Chang Q. Sun A model for the polarization hysteresis loops of the perovskite-type ferroelectric thin films. Appl. Phys. Letts, 91 (2007), 142902 (SCI源刊，影响因子4.127)
89、Z. Ye, M. H. Tang, Y. C. Zhou, X. J. Zheng Electrical properties of V-doped Bi3.15Nd0.85Ti3O12 thin films with different contents. Appl. Phys. Letts, 90 (2007), 082905 (1-3) (SCI源刊，影响因子4.127)
90、J. Zhang, M. H. Tang, J. X. Tang, F. Yang, H. Y. Xu, W. F. Zhao, X. J. Zheng, Y. C. Zhou, and J. He Bilayer model of polarization offset of compositionally graded ferroelectric thin films. Appl. Phys. Letts, 91 (2007), 162908 (1-3) (SCI源刊，影响因子4.127)
91、X. L. Zhong, J. B. Wang, L. Z. Sun, C. B. Tan, X. J. Zheng, and Y. C. Zhou Improved ferroelectric properties of bismuth titanate films by Nd and Mn cosubstitution. Appl. Phys. Lett., 90(1), (2007), 012906 (1-3) (SCI源刊，影响因子4.127)
92、F. Yang, M. H. Tang, Z. Ye, Y. C. Zhou, X. J. Zheng, J. X. Tang, J. J. Zhang and J. He Eight logic states of tunneling magneto-electroresistance in multiferroic tunnel junctions. Journal of Applied Physics, 102 (2007), 044504(1-5) (SCI源刊,影响因子2.497)
93、X. J. Zheng, et al. The Effects of annealing temperature on the properties of Bi3.15Nd0.85 Ti3O12 thin films. Scripta Materialia 57 (2007) 675-678 (SCI源刊，影响因子2.112)
94、M. H. Tang, Y. C. Zhou, X. J. Zheng. Electrical Properties of Metal-Ferroelectric -Insulator-Semiconductor Capacitors using Pt/ (Bi3.15Nd0.85)(Ti3-xVx)O12/Y2O3/Si Structure. Integrated Ferroelectrics, 94 (2007), 105-114(SCI源刊，影响因子0.427)
95、M. H. Tang, Y. C. Zhou, X. J. Zheng. Structural and electrical properties of metal-ferroelectric-insulator-semiconductor transistors using a Pt/Bi3.25Nd0.75Ti3O12/Y2O3/Si structure. Solid State Electronics, 51 (2007), 371-375(SCI源刊，影响因子1.210)
96、C. P. Cheng, M.H. Tang, Z. Ye, X. L. Zhong, X. J. Zheng, Y. C. Zhou, Z. S. Hu Structure evolution and ferroelectric properties of Bi3.4Yb0.6Ti3O12 thin films crystallized under a moderate temperature. Materials Letters, 61 (2007), 3563 (SCI源刊，影响因子1.353)
97、C. P. Cheng, M. H. Tang, Z. Ye, Y. C. Zhou, X. J. Zheng Microstructure and ferroelectric properties of dyprosia-doped bismuth titanate thin films. Materials Letters, 61 (2007), 4117-4120(SCI源刊，影响因子1.353)
98、X. J. Zheng, J. J. Zhang, Y. C. Zhou, Y. Q. Chen, Y. Bo Simulation of electric properties of MFIS capacitor with BNT ferroelectric thin film using Silvaco/Atlas. Trans. Nonferrous Met. Soc.
99、X. J. Zheng, B. Yang, Z. Zhu, B. Wu, Y. L. Mao Kinetic Monte Carlo Simulation of the Growth of BaTiO3 Thin Film via Pulsed Laser Deposition. Trans. Nonferrous Met. Soc.
100、X. J. Zheng, J.Lu, Y. C. Zhou, B. Wu, Y. Q. Chen.Evolution of the domain structure and the frequency effect on the ferroelectric properties in BIT ferroelectrics. Trans. Nonferrous Met. Soc.
101、X. J. Zheng, L. P. Tang, Q. Y. Wu, B. Wu.Evaluation of the effective elastic constants for polycrystalline PZT thin films by XRD patterns and pole figures. Journal of Central South University of Technology. 14(s1), (2007), 130-134(SCI源刊，影响因子0.277)
102、J. X. Tang, M. H. Tang, F. Yang, J. J. Zhang, Y. C. Zhou, and X. J. Zheng A temperature-dependent model for kink effect of partially depleted SOI MOSFETs. Journal of Functional Materials, 38 (2007), 872-877
103、X. J. Zheng, L. He, Y. C. Zhou, M. H. Tang. Effects of europium content on the microstructural and ferroelectric properties of Bi(4?x)EuxTi3O12 thin films. Appl. Phys. Lett. (2006), 89: 252908 (1-3) (SCI源刊，影响因子4.127)
104、Z. Ye, M. H. Tang, C. P. Cheng, Y. C. Zhou, X. J. Zheng, Z. S. Hu. Simulation of polarization and butterfly hysteresis loops in bismuth layer-structured ferroelectric thin films. J. Appl. Phys. 100(2006), 094-101. (SCI源刊,影响因子2.497)
105、M. H. Tang, Y. C. Zhou, X. J. Zheng, Z. Yan, C. P. Cheng, Z. Ye, Z. S. Hu. Characterization of ultra-thin Y2O3 films as insulator of MFISFET structure. Trans. Nonferrous Met. SOC. China 16(2006), 63-66. (SCI源刊，影响因子0.277)
106、C. P. Cheng, M. H. Tang, Z. Ye, Y. C. Zhou, X. J. Zheng. Ferroelectric properties of dysprosium-doped Bi4Ti3O12 thin films crystallized in various atmospheres. Trans. Nonferrous Met. SOC. China 16(2006), 33-36. (SCI源刊，影响因子0.277)
107、Z. Ye, M. H. Tang, C. P. Cheng,Y. C. Zhou, X. J. Zheng, Z. S. Hu. Effect of annealing temperature on ferroelectric properties of (Bi, Nd)4(Ti,V)3O12 thin films. Trans. Nonferrous Met. SOC. China 16(2006), 71-74. (SCI源刊，影响因子0.277)
108、X. Tan, Y. C. Zhou and X. J. Zheng. Pulsed-laser deposition of polycrystalline Ni films: a three-dimensional kinetic Monte Carlo simulation, Surface Sci.,588(1-3) (2005), 175-183 (SCI源刊，影响因子2.168)
109、X. J. Zheng and Y. C. Zhou, Investigation of an anisotropic plate model to evaluate the interface adhesion of thin film with cross-sectional nanoindentation method, Composites Sci. Tech., (2005),1382-1390 (SCI源刊，影响因子1.783)
110、X. L. Zhong, J. B. Wang, Y. C. Zhou, J. J. Liu, X. J. Zheng, Electrical properties of Nd-substrated Bi4Ti3O12 thin films fabricated by chemical solution deposition, J. Crystal Growth, 277 (1-4),(2005), 233-237 (SCI源刊，影响因子1.707)
111、X. Tan, X. J. Zheng and Y. C. Zhou, Dependence of morphology of pulsed-laser deposited coatings on temperature: a kinetic Monte Carlo simulation, Surface and Coating Technology, 197(2-3), (2005), 288-293 (SCI源刊，影响因子1.432)
112、X. Tan, Y. C. Zhou, and X. J. Zheng, Comparison of island formation between pulsed laser deposition and molecular beam epitaxy, Surface review and letters, 12(2005), 611- 617 (SCI源刊，影响因子0.675 )
113、X. J. Zheng, J. Y. Li and Y. C. Zhou. X-ray diffraction measurement of residual stress in PZT thin films prepared by pulsed laser deposition. Acta Mater., 52,(2004), 3313-3322. SCI影响因子3.059
114、X. J. Zheng, S. F. Deng, Y. C. Zhou, X. Tan. Plate model to evaluate interfacial adhesion of anisotropy thin film in CSN test. Journal of Materials Science. 2004，39(12), 4013-4016. SCI影响因子0.826
115、X. L. Zhong, X. J. Zheng, J. T. Yang. Dependence of Ba(Zr0.1Ti0.9)O3 films growth on substrate temperature upon radio-frequency plasma enhanced pulsed laser deposition, Journal of Crystal Growth, 271(1-2)(2004),216-222 (SCI源刊，影响因子1.707)
116、X. L. Zhong, J. B. Wang, X. J. Zheng, Y. C. Zhou. Structure and ferroelectric and dielectric properties of Bi3.5Nd0.5Ti3O12 thin films under a moderate temperature annealing, Appl. Phys. Lett.,85(23)(2004), 5661-5663 (SCI源刊，影响因子4.127)
117、S. F. Deng, X. J. Zheng, J. T.Yang.X-ray Diffraction Measurement of Residual Stress in PZT Thin Films Prepared by MOD with the New Extended Model. Journal of Materials Science and Technology, 52.11 (2004), 3313-3322 (SCI源刊，影响因子0.329)
118、X. J. Zheng, Y. C. Zhou and J. Y. Li. Nano-indentation fracture test of Pb(Zr0.52Ti0.48)O3 ferroelectric thin films. Acta Mater., 51, (2003), 3985-3997. SCI影响因子3.059
119、X. J. Zheng, Y. C. Zhou, H. Zhong. Dependence of fracture toughness on annealing temperature in PZT thin films produced by metal organic decomposition. Journal of Materials Research, 18(3), (2003), 578-584. SCI影响因子1.635
120、X. J. Zheng, Z.Y.Yang and Y. C. Zhou. Residual stresses in Pb(Zr0.52Ti0.48)O3 thin films deposited by metal organic decomposition. Scripta Materialia, 49(1), (2003)，71-76. SCI影响因子1.633
121、X. J. Zheng, Y. C. Zhou, J. M. Liu and A. D. Li. Use of the nanomechanical fracture-testing for determining interfacial adhesion of PZT ferroelectrics thin films. Surface and Coating Technology, 176, (2003), 67-74. SCI影响因子1.410
122、X. J. Zheng, Y. C. Zhou, J. M. Liu and A. D. Li. Determination of interfacial fracture energy of PZT ferroelectric thin films by nano-scratch technique. Journal of Materials Science Letters, 22(10) , (2003)，743-745. SCI影响因子0.470
123、X. J. Zheng, Y. C. Zhou，Z. Yan. Dependence of Crystalline, Ferroelectric and Fracture Toughness on Annealing in Pb(Zr0.52Ti0.48)O3 Thin Films Deposited by Metal Organic Decomposition. Materials Research, 6(4), (2003)，551-556.
124、Y. C. Zhou, Z. Y. Yang, X. J. Zheng. Residual stress in PZT thin films prepared by pulsed laser deposition. Surface and Coating Tech., 162(2-3), (2003)，202-211. SCI影响因子1.410
125、X. J. Zheng, Y. C. Zhou, M. Z. Nin. Thermopiezoelectric response of a piezoelectric thin film PZT-6B deposited on MgO (100) substrate due to a continuous laser. Int. J. Solid Structure, 39(15), (2002), 3935-3957. SCI影响因子1.327
126、X. J. Zheng, Y. C. Zhou, J. M. Liu and A. D. Li. Interfacial adhesion analysis of Pb(Zr0.52Ti0.48)O3 ferroelectrics thin films by nano-indentation test. Phys Lett A, 304(3-4), (2002)，110-113. SCI影响因子1.324
127、Z. Y. Yang, Y. C. Zhou, X. J. Zheng, Z. Yan and G. Bignall. The determination of residual stress in PZT thin film prepared by pulsed laser deposition. Journal of Materials Science Letters, 21(19), (2002)，1541-1544. SCI影响因子0.470
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