杨琼导师主页

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基本信息

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姓名: 杨琼
职称: 副教授
单位电话:
电子信箱: qyang@xtu.edu.cn
办公室: 微电子材料与器件系
个人主页:

个人简介

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个人简介

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杨琼，男，1986 年7月生，博士，副教授，湖南省优秀青年基金获得者。主要从事面向新一代信息存储技术的铁电、多铁薄膜及存储器件的微观设计与电学性能的第一性原理研究。主持国家自然科学基金面上和青年项目各一项、湖南省自然科学基金青年和优秀青年项目各一项、湖南省教育厅优秀青年项目一项、横向项目一项等，同时作为骨干成员参与了多项国家自然科学基金等项目。目前已在Nano Letters、ACS Applied Materials & Interfaces、Physical Review Applied、Acta Materialia、Journal of Physical Chemistry C、Applied Physics Letters等国际著名学术期刊发表SCI论文多篇。
欢迎材料、物理、电子等相关专业的同学报考我的研究生，详情请E-mail咨询。


学习工作经历

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教育经历：
2008/09-2013/12，湘潭大学材料与光电物理学院，工学博士
2004/09-2008/06，湘潭大学材料与光电物理学院，理学学士
工作经历：
2018/11-2020/04，美国内布拉斯加大学林肯分校，访问****
2016/12-至今，湘潭大学材料科学与工程学院，副教授
2014/01-2016/11，湘潭大学材料科学与工程学院，讲师

研究方向

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电磁功能材料
信息存储材料与元器件
电介质物理

科研项目

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在研项目：
1、国家自然科学基金面上项目，氧化铪基铁电异质结铁电相变和存储特性的界面调控机理研究 ，2021/01-2024/12
2、湖南省自然科学基金优秀青年项目，氧化铪基铁电异质结的界面调制及其隧道结存储单元的理论设计，2021/01-2023/12
3、湖南省教育厅优秀青年项目，HfO₂基薄膜铁电性能界面调控机理的第一性原理研究，2019/1-2021/12

已结题项目：

1、国家自然科学基金青年项目，铁电薄膜畴壁结构及其动力学演化的第一性原理研究，2015/01-2017/12
2、湖南省自然科学基金青年项目，铁电薄膜的缺陷演化及其调控的第一性原理研究，2017/01-2019/12
3、横向项目，SiO₂重离子硬损伤的第一性原理和分子动力学研究，2014/07-2015/12

4、湘潭大学科研启动项目，铁电薄膜界面调控的第一性原理研究，2015-2017
参与项目：

作为核心成员参与了国家自然科学基金重点项目等多项研究项目

代表性学术成果

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[1] W. T. Ding, Y. K. Zhang,L. L. Tao,Q. Yang*, and Y. C. Zhou*,The atomic-scale domain wall structure and motion in HfO₂-based ferroelectrics: A first-principle study,Acta Materialia 196,556–564 (2020)
[2]Y. K. Zhang, Q. Yang*,L. L. Tao, E. Y. Tsymbal*, and V.Alexandrov*,Effects of strain and film thickness on the stability of the rhombohedral phase of HfO₂,PhysicalReviewApplied 14, 014068(1–8) (2020)
[3]Q. Yang*, L. L. Tao, Y. K. Zhang, M. Li, Z. Jiang, E. Y. Tsymbal*, and V. Alexandrov*, Ferroelectric tunnel junctions enhanced by a polar oxide barrier layer, Nano Letters 19, 7385–7393 (2019)
[4] Q. Yang*, L. L. Tao, Z. Jiang, Y. C. Zhou, E. Y. Tsymbal*, and V. Alexandrov*, Magnetoelectric effect at the Ni/HfO₂ interface induced by ferroelectric polarization, Physical Review Applied12, 024044(1–7) (2019)
[5] P. Fan, Y. K. Zhang, Q. Yang*, J. Jiang, L. M. Jiang, M. Liao, and Y. C. Zhou*, Origin of the intrinsic ferroelectricity of HfO₂ from ab initio molecular dynamics, Journal of Physical Chemistry C123, 21743–21750(2019)
[6] Y. Zhou, Y. K. Zhang, Q. Yang*, J. Jiang, P. Fan, M. Liao, and Y. C. Zhou*, The effects of oxygen vacancies on ferroelectric phase transition of HfO₂-based thin film from first-principle, Computational Materials Science 167, 143–150 (2019)
[7] J. Jiang,Q. Yang, Y. Zhang, X. Y. Li, P. W. Shao, Y. H. Hsieh, H. J. Liu, Q. X. Peng, G. K. Zhong, X. Q. Pan, Y. H. Chu*, and Y. C. Zhou*, Self-assembled ferroelectric nanoarray. ACS Applied Materials & Interfaces11, 2205-2210 (2019)
[8]X. Y. Li,Q. Yang*,J. X. Cao,L. Z. Sun,Q. X. Peng*,Y. C. Zhou, andR. X. Zhang, Domain wall motion in perovskite ferroelectrics studied by the nudged elastic band method, Journal of Physical Chemistry C122, 3091–3100 (2018)
[9] J. L. Peng,D. L. Shan,Y. Y. Liu*,K. Pan,C. H. Lei,N. B. He,Z. Y. Zhang, andQ. Yang, A thermodynamic potential for barium zirconate titanate solid solutions, npj Computational Materials4,66 (2018)

[10]Q. Yang, J. X. Cao*, Y. C. Zhou*, L. Z. Sun, and X. J. Lou, Dead layer effect and its elimination in ferroelectric thin film with oxide electrodes, Acta Materialia112, 216-223(2016)
[11] X.W. Jiang,Q. Yang, and J.X. Cao*, The effect of domain walls on leakage current in PbTiO₃thin films, Physics Letters A380, 1071-1074 (2016)
[12] W.Q. Zhang,Q. Yang, Y.C. Zhou*, and J.X. Cao, Interface effect on leakage current of ferroelectric film, Computational Materials Science115, 120-124 (2016)
[13] J. S. Zhen,Q. Yang*, Y. H. Yan, X. W. Jiang, S. A. Yan, W. Chen, and X. Q. Guo, Molecular dynamics study of structural damage in amorphous silica induced by swift heavy-ion radiation, Radiation Effects and Defects in Solids171, 340-349 (2016)
[14] H. Liao,Q. Yang, Y. C. Zhou*, Y. Zhang, and L. M. Jiang, Tuning the physical properties of BNT ferroelectric film by miscut Si substrate, Ferroelectrics478, 54-59 (2015)
[15] L. M. Jiang, Y. C. Zhou*, Y. Zhang,Q. Yang, Y. Gu, and L. Q. Chen, Polarization switching of the incommensurate phases induced by flexoelectric coupling in ferroelectric thin films, Acta Materialia90, 344-354 (2015)
[16] L. M. Jiang, J. Y. Tang, Y. C. Zhou*,Q. Yang, Y. Zhang, L. L. Guo, and X. L. Zhong, Simulations of local-mechanical-stress-induced ferroelectric polarization switching by a multi-field coupling model of flexoelectric effect, Computational Materials Science108, 309-315 (2015)
[17]张文庆，杨琼，曹觉先，周益春*，SrTiO₃缓冲层引起的铁电薄膜极化对称性破缺，现代应用物理6，286-292 (2015)
[18]姜杰，杨琼，周益春*，蒋丽梅，溶胶-凝胶法制备Mn掺杂的BaTiO₃铁电薄膜，现代应用物理6，209-213 (2015)
[19]Q. Yang,J. X. Cao*, Y. C. Zhou*, Y. Zhang, Y. Ma, and X. J. Lou, Tunable oxygen vacancy configuration by strain engineeringinperovskite ferroelectrics from first-principles study, Applied Physics Letters103,142911(1-5) (2013)
[20]Q. Yang, J. X. Cao*, Y. Ma*, Y. C. Zhou, L. M. Jiang, and X. L. Zhong, Strain effects on formation and migration energies of oxygen vacancy in perovskite ferroelectrics: A first-principles study, Journal of Applied Physics113, 184110(1-5) (2013)
[21]Q. Yang, J. X. Cao*, Y. Ma, Y. C. Zhou*, X. J. Lou, and J. Yang, Interface effect on the magnitude and stability of ferroelectric polarizationin ultrathin PbTiO₃films from first-principles study, Journal of Applied Physics114, 034109(1-6) (2013)
[22]Q. Yang, J. X. Cao, Y. Ma, and Y. C. Zhou*, First principles study of polarization-strain coupling in SrBi₂Ta₂O₉, AIP Advances3, 052134(1-7) (2013)
[23]Q. Yang, H. Liao, J. X. Cao, Y. Ma, and Y. C. Zhou*, Spontaneous polarization and its strain effects for orthorhombic and monoclinic Bi₄Ti₃O₁₂: A first principle study, International Journal of Modern Physics B27, **(1-7) (2013)
[24] J. H. Wen,Q. Yang, J. X. Cao*, and Y. C. Zhou, Strain control of the leakage current of the ferroelectric thin films, Acta Physica Sinica62, 067701(1-5) (2013)