姓名：何红宇
职称：副教授
研究方向：半导体器件物理，集成电路设计
Email: hongyuhe2018@yahoo.com



华中科技大学电子科学与技术专业本科毕业；华中科技大学微电子学与固体电子学专业硕士毕业；华南理工大学微电子学与固体电子学专业博士毕业；北京大学博士后。
[1] Hongyu He, et al, Analytical drain current model for amorphous InGaZnO thin-film transistors at different temperatures considering both deep and tail trap states, IEEE Transactions on Electron Devices, 2017, 64(9): 3654-3660
[2] Hongyu He, et al, Analytical drain current model for organic thin-film transistors at different temperatures considering both deep and tail trap states, IEEE Transactions on Electron Devices, 2016, 63(11): 4423-4431
[3] Hongyu He, et al, Above-threshold 1/f noise expression for amorphous InGaZnO thin-film transistors considering series resistance noise, IEEE Electron Device Letters, 2015, 36(10): 1056-1059
[4] Hongyu He, et al, 1/f noise expressions for amorphous InGaZnO TFTs considering mobility power-law parameter in above-threshold regime, IEEE Electron Device Letters, 2015, 36(2): 156-158
[5] Hongyu He, et al, Trapped-charge-effect-based above-threshold current expressions for amorphous silicon TFTs consistent with Pao-Sah model. IEEE Transactions on Electron Devices, 2014, 61(11): 3744-3750
[6] Hongyu He, et al, Polynomial-effective-channel-mobility-based above-threshold current model for undoped polycrystalline-silicon thin-film transistors consistent with Pao-Sah model, IEEE Transactions on Electron Devices, 2012, 59(11): 3130-3132
[7] Hongyu He, et al, Analytical expressions for doped polycrystalline silicon thin-film transistors in above-threshold regime consistent with Pao-Sah model considering trapped charge effect, IEEE Transactions on Electron Devices, 2011, 58(12): 4324-4332
[8] Hongyu He, et al, Analytical model of undoped polycrystalline silicon thin-film transistors consistent with Pao-Sah model, IEEE Transactions on Electron Devices, 2011, 58(4): 1102-1107