邹望辉，男，汉族，1978年11月出生。2012年毕业于华中科技大学微电子学与固体电子学专业，获博士学位。2014年2月至2015年5月，在美国加州大学河滨分校从事博士后研究。现工作于长沙理工大学物理与电子科学学院。主要研究方向为：模拟/混合集成电路设计，射频集成电路设计，微电子器件与光电集成。先后主持国家自然科学基金青年基金1项，面上项目1项，目前在研1项。

近期科研论文：
1.Wanghui Zou, Yu Xia, Wei Peng, Yun Zeng, “Graphene-gated lateral P–I–N photodiode based on silicon-on- insulator process”, Applied Physics Express, 9, 024301, 2016.
2.Wanghui Zou, Yu Xia, Diping Chen, Yun Zeng, ‘’A High-Speed Lateral PIN Polysilicon Photodiode on Standard Bulk CMOS Process”. Solid State Electronics, Mar. 2017.
3.Wanghui Zou, Wei Peng, Diping Cheng, Yun Zeng, “Experimental Investigation of Multi-path and Metal-stacking Structure for On-Chip 8-shaped Inductors on Standard CMOS”. Electronics Letters, Oct. 2016.
4.Wanghui Zou, Xiaofei Chen, Kui Dai and Xuecheng Zou, “Switched-inductor VCO using tapped vertical solenoid inductors”,IET Electronics Letters, Vol. 48, no. 9, Apr. 2012.
5.Wanghui Zou, “An analytical series resistance model for on-chip multilayer inductors with consideration of proximity effects between stacked layers”.10^thIEEE International Conference on ASIC(IEEE ASICON 2015), 2015.
6.Wanghui Zou, Xiaofei Chen, Xuecheng Zou, “An improved analytical series resistance model for on-chip multilayer inductors”,10^thIEEE International Conference on ASIC(IEEE ASICON 2013), 2013.
联系方式：长沙理工大学云塘校区理科楼C310，Email:zouwh@csust.edu.cn