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武汉大学物理科学与技术学院导师简介-陈志权

武汉大学 免费考研网/2015-07-31

教师姓名:陈志权
单 位武汉大学物理科学与技术学院5-116
职 称教授
学 历博士
E-mailchenzq@whu.edu.cn
研究方向核固体物理
详细描述姓名:陈志权

职务/职称:教授
地址:武汉大学物理科学与技术学院5-116
电话:Tel:027-6875-3880,Fax:027-6875-3880
E-mail:chenzq@whu

一、学历及工作简历:
1987.9—1991.7武汉大学物理系本科
1991.9—1993.7武汉大学物理系硕士研究生(提前攻博)
1993.9—1996.7复旦大学物理二系博士研究生
1996.9—1998.7武汉大学物理科学与技术学院博士后
1998.7—1999.5武汉大学物理科学与技术学院副教授
1999.5—1999.11日本筑波大学物理工学系外国人研究员
2000.2—2002.2日本学术振兴会(JSPS)外国人特别研究员(ID:P99261)
2002.6—2005.6日本原子力研究所研究员(JAERIResearchfellow)
2005.12—武汉大学物理科学与技术学院教授

二、研究方向:
1、半导体材料d0铁磁性与缺陷间的关系
2、铝合金时效过程中的缺陷演变及析出相结构
3、热电材料微结构与热电性能研究
4、多孔催化剂孔结构及化学环境
三、科学研究:

主持的科研项目:
1.用慢正电子技术研究半导体表面界面缺陷湖北省自然科学基金2.0万元主持顺利结题
2.用正电子湮没研究重掺杂半导体载流子饱和的微观机制武汉大学自强基金3.0万元主持顺利结题
3.宽禁带半导体ZnO电子辐照引入缺陷及其回复研究湖北省杰出青年基金10万元主持顺利结题
4.半导体缺陷的正电子谱学研究教育部青年骨干教师基金12万元主持顺利结题
5.沸石中半导体纳米团簇材料的正电子研究国家自然科学基金20万元主持顺利结题
6.ZnO中离子注入掺杂引入缺陷及其对电学和磁学性能的影响国家自然科学基金45万元主持顺利结题
7.材料缺陷结构三维分布的正电子显像973预研38万元主持顺利结题
8.ZnO中缺陷的形成机制及其对材料光学电学性能影响的研究教育部新世纪优秀人才支持计划50万元主持顺利结题
9.用正电子湮没二维多普勒展宽谱研究铝合金时效过程中纳米析出物的微结构国家自然科学基金50万元主持顺利结题
10.用正电子湮没谱学研究热电材料的缺陷及其对热电性能的影响国家自然科学基金90万元主持正在进行
11.多孔催化剂孔结构及表面活性物质分散状态的正电子湮没研究国家自然科学基金96万元主持正在进行
发表论文:

自1993年以来,共发表SCI论文90余篇。H-index:16。近期发表的部分论文如下:
[1]X.F.Li,B.Zhao,T.Zhang,H.F.He,Q.Zhang,D.W.Yang,Z.Q.Chen*,X.F.Tang,Order-disordertransitioninclathrateBa6Ge25studiedbypositronannihilation.AppliedSurfaceScience,342,42-46(2015)

[2]N.Qi,Z.Q.Chen*,A.Uedono,Molecularmotionandrelaxationbelowglasstransitiontemperatureinpoly(methylmethacrylate)studiedbypositronannihilation.RadiationPhysics&Chemistry,108,81-86(2015)

[3]T.Zhang,K.Zhou,X.F.Li,Z.Q.Chen*,X.L.SuandX.F.Tang,StructuraltransitionofpartiallyBa-filledthermoelectricCoSb3investigatedbypositronannihilationspectroscopy.JournalofAppliedPhysics117,055103(2015)

[4]X.F.Li,Z.Q.Chen*,C.Liu,H.J.ZhangandA.Kawasuso,EnhanceddamagebuildupinC+-implantedGaNfilmstudiedbyamonoenergeticpositronbeam.JournalofAppliedPhysics117,085706(2015)

[5]H.F.He,X.F.Li,Z.Q.Chen*,Y.Zheng,D.W.Yang,andX.F.Tang,InterplaybetweenPointDefectsandThermalConductivityofChemicallySynthesizedBi2Te3NanocrystalsStudiedbyPositronAnnihilation.JournalofPhysicalChemistryC118,22389-22394(2014)

[6]T.Li,D.W.Liu,H.Y.Dai,H.W.Xiang,Z.P.Chen,H.F.He,Z.Q.Chen,EffectofdefectonthenonlinearanddielectricpropertyofCa(1–x)SrxCu3Ti4O12ceramicssynthesizedbysol–gelprocess.JournalofAlloysandCompounds,599,145-149(2014)

[7]M.Jiang,X.D.Xue,Z.Q.Chen*,Y.D.Liu,H.W.Liang,H.J.Zhang,A.Kawasuso,DefectsandacceptorcentersinZnOintroducedbyC+-implantation.JournalofMaterialsScience,49,1994-1999(2014)

[8]M.Jiang,L.L.Liu,Z.Wang,Z.Q.Chen*,MicrostructureofZnO-Li2CO3compoundstudiedbypositronannihilationspectroscopy.PhyscaStatusSolidi(a)211,206-212(2014)

[9]Z.W.Liu,H.J.Zhang,Z.Q.Chen*,MonolayerdispersionofCoOonAl2O3probedbypositroniumatom.AppliedSurfaceScience,293,326-331(2014)

[10]B.Zou,Z.Q.Chen*,C.H.Liu,J.H.Chen,MicrostructureevolutionofheavilydeformedAA5083Al–Mgalloystudiedbypositronannihilationspectroscopy.AppliedSurfaceScience,296,154-157(2014)

[11]B.Zou,Z.Q.Chen*,C.H.Liu,J.H.Chen,Vacancy–MgcomplexesandtheirevolutioninearlystagesofagingofAl–Mgbasedalloys.AppliedSurfaceScience,298,50-55(2014)

[12]D.D.Wang,N.Qi,M.Jiang,Z.Q.Chen*,DefectsversusgrainsizeeffectsontheferromagnetismofZrO2nanocrystalsclarifiedbypositronannihilation,AppliedPhysicsLetters,102,042407(2013).

[13]M.Jiang,D.D.Wang,Z.Q.Chen*,S.Kimura,Y.Yamashita,A.Mori,andA.Uedono,ChemicaleffectofSi+ionsontheimplantation-induceddefectsinZnOstudiedbyaslowpositronbeam,JournalofAppliedPhysics,113,043506(2013)

[14]C.Y.Li,H.J.Zhang,Z.Q.Chen*,ReactionbetweenNiOandAl2O3inNiO/r-Al2O3catalystsprobedbypositroniumatom,AppliedSurfaceScience,266,17-21(2013)

[15]QiNing,JiaYan-Lin,LiuHui-Qun,YiDan-Qing,Z.Q.Chen*,EvolutionofDefectsinDeformedCu-Ni-SiAlloysduringIsochronalAnnealingStudiedbyPositronAnnihilation,ChinesePhysicsLetters,29,127803(2012)

[16]H.J.Zhang,Z.Q.Chen*,andS.J.Wang,MonolayerdispersionofNiOinNiO/Al2O3catalystsprobedbypositroniumatom,JournalofChemicalPhysics,136,034701(2012)

[17]M.Jiang,D.D.Wang,B.Zou,Z.Q.Chen*,A.Kawasuso,andT.Sekiguchi,EffectofhightemperatureannealingondefectsandopticalpropertiesofZnOsinglecrystals,Phys.StatusSolidiA11,2126(2012)

[18]Zhi-YuanChen,Z.Q.Chen*,B.Zou,X.G.Zhao,Z.Tang,andS.J.Wang,DefectmediatedferromagnetisminNi-dopedZnOnanocrystalsevidencedbypositronannihilationspectroscopy,JournalofAppliedPhysics,112,083905(2012)

[19]D.D.Wang,Z.Q.Chen*,C.Y.Li,X.F.Li,C.Y.Cao,Z.Tang,CorrelationbetweenferromagnetismanddefectsinMgOnanocrystalsstudiedbypositronannihilation,PhysicaB:CondensedMatter,407,2665-2669(2012)(他引1次)

[20]S.H.Huang,Z.Q.Chen*,H.J.Zhang,Three-gammaannihilationofortho-positroniuminNiO/γ-Al2O3catalystsdetectedbypositronlifetimeandcoincidenceDopplerbroadeningmeasurements,RadiationPhysicsandChemistry,81,791-795(2012)

[21]ZhangHong-Jun,LiuZhe-Wen,Z.Q.Chen*,S.J.Wang,ChemicalQuenchingofPositroniuminCuO/Al2O3Catalysts,ChinesePhysicsletters,28,017802(2011)

[22]QiNing,WangYuan-Wei,WangDong,WangDan-Dan,Z.Q.Chen*,PositronannihilationstudyofthemicrostructureofCodopedZnOnanocrystals,ActaPhys.Sin.60,107805(2011))(他引2次)

[23]Zhi-YuanChen,Z.Q.Chen*,D.D.Wang,S.J.Wang,CorrelationbetweeninterfacialdefectsandferromagnetismofBaTiO3nanocrystalsstudiedbypositronannihilation,AppliedSurfaceScience,258,19-23(2011)(他引4次)

[24]DongWang,Z.Q.Chen*,D.D.Wang,J.Gong,C.Y.Cao,Z.Tang,L.R.Huang,EffectofthermalannealingonthestructureandmagnetismofFe-dopedZnOnanocrystalssynthesizedbysolidstatereaction,JournalofMagnetismandMagneticMaterials,322,3642-3647(2010)(他引7次)

[25]C.Li,H.J.Zhang,Z.Q.Chen*,ChemicalquenchingofpositroniuminFe2O3/Al2O3catalysts,AppliedSurfaceScience,256,6801-6804(2010)

[26]H.J.Zhang,Z.Q.Chen*,S.J.Wang,A.KawasusoandN.Morishita,SpinconversionofpositroniuminNiO/Al2O3catalystsobservedbycoincidenceDopplerbroadeningtechnique,Phys.Rev.B82,035439(2010)

[27]D.Wang,Z.Q.Chen*,D.D.Wang,N.Qi,J.Gong,C.Y.Cao,andZ.Tang,PositronAnnihilationstudyoftheinterfacialdefectsinZnOnanocrystals:Correlationwithferromagnetism,J.Appl.Phys.107,023524(2010)(他引25次)

[28]D.Wang,Z.Q.Chen*,F.Zhou,W.Lu,M.Maekawa,A.Kawasuso,FerromagnetismandmicrostructureinFe+-implantedZnO,AppliedSurfaceScience,255,9371-9375(2009)(他引3次)

[29]Z.Q.Chen,K.Betsuyaku,A.Kawasuso,Vacancydefectsinelectron-irradiatedZnOstudiedbyDopplerbroadeningofannihilationradiation,Phys.Rev.B77,113204(2008)(他引16次)

[30]Z.Q.Chen,M.Maekawa,A.Kawasuso,andH.Naramoto,Ionspeciesdependenceoftheimplantation-induceddefectsinZnOstudiedbyaslowpositronbeam,Phys.Stat.Sol.(c)4,3646(2007)(他引1次)

[31]X.Q.Meng,Z.Q.Chen,P.Jin,Z.G.Wang,andLongWei,Defectsaroundself-organizedInAsquantumdotsmeasuredbyslowpositronbeam,Appl.Phys.Lett.91,093510(2007)(他引4次)

[32]Z.Q.Chen,S.J.Wang,M.Maekawa,A.Kawasuso,H.Naramoto,X.L.Yuan,andT.Sekiguchi,Thermalevolutionofdefectsinas-grownandelectron-irradiatedZnOstudiedbypositronannihilation,Phys.Rev.B75,245206(2007)(他引37次)

[33]Z.Q.Chen,A.Kawasuso,Vacancy-typedefectsinducedbyHe-implantationinZnOstudiedbyaslowpositronbeam,ActaPhys.Sin.55,4353(2006)(他引1次)

[34]Z.Q.Chen,M.Maekawa,A.Kawasuso,S.Sakai,andH.Naramoto,Annealingprocessofion-implantation-induceddefectsinZnO:Chemicaleffectoftheionspecies,J.Appl.Phys.99,093507(2006)(他引33次)

[35]Z.Q.Chen,M.Maekawa,A.KawasusoEnergyVariableSlowPositronBeamStudyofLi+-Implantation-InducedDefectsinZnO,ChinesePhysicsLetters,23,675(2006)(他引3次)

[36]Z.Q.Chen,M.Maekawa,A.Kawasuso,S.Sakai,andH.Naramoto,ElectronIrradiationInducedDefectsinZnOStudiedbyPositronAnnihilation,PhysicaB376-377,722(2006)(他引12次)

[37]Z.Q.Chen,M.Maekawa,A.Kawasuso,R.Suzuki,andT.Ohdaira,InteractionofnitrogenwithvacancydefectsinN+-implantedZnOstudiedusingaslowpositronbeam.Appl.Phys.Lett.87,091910(2005)(他引18次)

[38]Z.Q.Chen,A.Kawasuso,Y.Xu,H.Naramoto,X.L.Yuan,T.Sekiguchi,R.Suzuki,andT.Ohdaira,Microvoidformationinhydrogen-implantedZnOprobedbyaslowpositronbeam.Phys.Rev.B71,115213(2005)(他引54次)

[39]Z.Q.Chen,S.Yamamoto,A.Kawasuso,Y.Xu,andT.Sekiguchi,CharacterizationofhomoepitaxialandheteroepitaxialZnOfilmsgrownbypulsedlaserdeposition.Appl.Surf.Sci.244,377(2005)(他引14次)

[40]Z.Q.Chen,A.Kawasuso,Y.Xu,H.Naramoto,X.L.Yuan,T.Sekiguchi,R.Suzuki,andT.Ohdaira,ProductionandrecoveryofdefectsinphosphorusimplantedZnO.J.Appl.Phys.97,013528(2005)(他引93次)

[41]Z.Q.Chen,M.Maekawa,S.Yamamoto,A.Kawasuso,X.L.Yuan,T.Sekiguchi,R.Suzuki,andT.Ohdaira,EvolutionofvoidsinAl+-implantedZnOprobedbyaslowpositronbeam.Phys.Rev.B69,035210(2004)(他引56次)

[42]Z.Q.Chen,M.Maekawa,T.Sekiguchi,R.SuzukiandA.Kawasuso,Ion-implantationInducedDefectsinZnOStudiedbyaSlowPositronBeam.MaterialScienceForum,Vol.445-446,57(2004)(他引3次)

[43]Z.Q.Chen,T.Sekiguchi,X.L.Yuan,M.Maekawa,andA.Kawasuso,N+ion-implantationinduceddefectsinZnOstudiedbyslowpositronbeam.J.Phys.:Condens.Matter,16,S293(2004)(他引16次)

[44]Z.Q.Chen,S.Yamamoto,M.Maekawa,A.Kawasuso,X.L.YuanandT.Sekiguchi,PostgrowthannealingofdefectsinZnOstudiedbypositronannihilation,X-raydiffraction,Rutherfordbackscattering,cathodoluminescenceandHallmeasurements.J.Appl.Phys.94,4807(2003)(他引101次)

[45]Z.Q.Chen,A.Uedono,T.SuzukiandJ.S.He,PositronAnnihilationStudyofFreeVolumeHolesinPolymersandPolymerBlends.J.Radioanal.&Nucl.Chem.,Vol.255,no.2,291-294(2003)(他引6次)

四、社会兼职

1、第11届中国正电子湮没委员会主任
2、国际正电子湮没顾问委员会委员
3、中国核物理学会理事

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