cqchen
- 职称职务：教授电话：电邮：cqchen@mail.hust.edu.cn地址： 个人简介2007.11-现在华中科技大学/武汉光电国家实验室（筹） 教授
博导 湖北省“楚天学者计划” 特聘教授
1997.10-2000.10德国埃尔兰根-纽伦堡大学博士研究生
1995.3 -1997.4中国科学院上海冶金研究所 博士研究生
1992.9-1994.12 武汉大学 硕士研究生
1992.9-1994.12 武汉大学本科生
研究领域 目前主要宽禁带半导体光电器件（含发光管LED和探测器）、半导体低维结构功能性量子调控器件等领域的研究工作。
主要学术成就在科研工作方面，作为项目负责人，近年来先后申请并获得国家重点基础研究发展计划973项目课题、973项目子课题、教育部新世纪人才计划、国家自然科学基金面上项目、湖北省自然科学青年基金项目、教育部高校博士点新教师基金、武汉市科技局重点项目等项目支持。在Appl. Phys. Lett.、Jpn. J. Appl. Phys.、J. Appl. Phys.等国际SCI学术刊物上发表了七十余篇半导体研究论文，SCI引用次数高于一千余次。。
部分代表性文章列表如下：
1. Jun Yin , Yang Li , Shengchang Chen , Jing Li , Junyong Kang , Wei Li , Peng Jin , Yonghai Chen , Zhihao Wu , Jiangnan Dai , Yanyan Fang , and Changqing Chen, Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells, Adv. Optical Mater. 2014, DOI: 10.1002/adom.**
2. Yang Li, Shengchang Chen, Man Kong, Senlin Li, Wu Tian, Shichuang Sun, Zhihao Wu, Yanyan Fang, Jiangnan Dai, and Changqing Chen, Defect reduction in Si-doped Al0.45Ga0.55N films by SiNx interlayer method，J. Appl. Phys. 043503 (2014).
3. F. Wu, W. Tian, W.Y. Yan, J. Zhang, S.C. Sun, J.N. Dai , Y.Y. Fang, Z.H. Wu, and C.Q. Chen, THz intersubband transition in GaN/AlGaN step quantum well, J. Appl. Phys. 113, 154505 (2013)
4. Jun Zhang, Wu Tian, Feng Wu, Weiyi Yan, Hui Xiong, Jiangnan Dai, Yanyan Fang, Zhihao Wu, and Changqing Chen, The Advantages of AlGaN-Based UV-LEDs Inserted With a p-AlGaN Layer Between the EBL and Active Region, IEEE Photonics J. 5, ** (2013)
5. Wu Tian, W Y Yan, J N Dai, S L Li, Y Tian, Xiong Hui, J B Zhang, Y Y Fang, Z H Wu and CQ Chen, Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD, J. Phys. D: Appl. Phys. 46 (2013) 065303 (6pp)
6. Wei Zhang, Jianbao Zhang, Zhihao Wu, Shengchang Chen, Yang Li, Yu Tian, Jiangnan Dai, Changqing Chen, and Yanyan Fang, Wei Zhang, Jianbao Zhang, Zhihao Wu, Shengchang Chen, Yang Li, Yu Tian, Jiangnan Dai, Changqing Chen, and Yanyan Fang, J. Appl. Phys. 113, 094503 (2013)
7. W. Tian, W.Y. Yan, Xiong Hui, S.L. Li, Y.Y. Ding, Y. Li, Y. Tian, J.N. Dai, Y.Y. Fang, Z.H. Wu, C.H. Yu, and C.Q. Chen, Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by MOCVD, J. Appl. Phys.112, 063526 (2012).
8. Jianbao Zhang, Zhihao Wu, Yang Li, Jin Xu, Wei Zhang, Hui Xiong, Yu Tian, Jiangnan Dai, Yanyan Fang, and Changqing Chen, Improved Performance of GaN-Based Light-Emitting Diodes via AlInGaN/InGaN Electron-Emitting Layer, Appl. Phys. Express5(2012) 112101.
9. Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki, Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (101) semipolar GaN, Appl. Phys. Lett. 98, 051902-1-3 (2011)
10. C. H. Yu, B. Zhang, W. Lu, S. C. Shen, H. C. Liu, Y.-Y. Fang, J. N. Dai, and C. Q. Chen, Strong enhancement of terahertz response in GaAs/AlGaAs quantum well photodetector by magnetic field. Applied Physics Letters, 97, 022102 (2010).
11. J. N. Dai, Z. H. Wu, C. H. Yu, Q. Zhang, Y. Q. Sun, Y. K. Xiong, X. Y. Han, L. Z. Tong, Q. H. He, F. A. Ponce and C.Q. Chen, Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers. J. Electronic Materials, 38, 1938(2009).
12. C. Q. Chen, J. P. Zhang, V. Adivarahan, A. Koudymov, H. Fatima, G. Simin, J. Yang, and M. Asif Khan, AlGaN/GaN/AlGaN double heterostructure for high power III-N field effect transistors, Appl. Phys. Lett. 82, 4593 (2003).
13. C. Q. Chen, V. Adivarahan, J. W. Yang, M. Shatalov, E. Kuokstis, and M. Asif Khan, Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells. Jpn. J. Appl. Phys. 42, L1039 (2003).
14. C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R.S. Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, M. A. Khan, H.P. Maruska, D. W. Hill, M. M. C. Chou, and B. Chai, GaN homoepitaxy on freestanding (1-100) oriented GaN substrates, Appl. Phys. Lett. 81, 3194 (2002).
15. C. Q. Chen, J. P. Zhang, M. Gaevski, W. H. Sun, H. M. Wang, R.S. Q. Fareed, J. W. Yang, G. Simin, and M. A. Khan, AlGaN layers grown on GaN using strain-relief interlayers, Appl. Phys. Lett. 81, 4961 (2002).
16. C. Q. Chen, J. Zeman, F. Engelbrecht, C. Peppermuller, R. Helbig, Z. H. Chen and G. Martinez, Photothermal ionization spectroscopy of shallow nitrogen donor states in 4H-SiC, J. Appl. Phys. 87, 3800 (2000).
获奖与荣誉称号
主要学术兼职
收起 展开
